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Atomic and electronic structure of a Heusler alloy Jason Kawasaki, University of Wisconsin-Madison Materials Research Science and Engineering Centers, DMR-1720415 Heusler compounds are promising materials for next generation devices for direct conversion of heat to electricity (thermoelectricity) and for magnetic computer memory. Performance in these applications depends sensitively on the arrangement of the atoms and the behavior of electrons, both of which are hard to predict and harder to control for Heuslers. We have grown thin films of FeVSb, a new Heusler compound, using molecular beam epitaxy, a kind of spray painting with “cans” of different atoms. The top picture is an electron microscope image showing the arrangement of the Fe, V, and Sb as different size dots. On the right, the image shows the material we want, FeVSb. On the left, there is a completely new, unexpected material, Fe 2 VSb, which is a new kind of magnet. Mixing together these two materials at a length scale of just nanometers may actually improve the applications performance. The bottom picture shows a schematic of a high efficiency thermoelectric device. The Fe 2 VSb inclusions (green squares) block the flow of heat, allowing the Fe 2 VSb/FeVSb composite to maintain a large temperature difference between hot and cold sides. Electron flow from the hot side to the cold create electrical current that carries power. 2019 Seed Intellectual Merit Sb V Fe Fe 1+x VSb FeVSb (top) Atomically resolved interface between magnetic Fe 2 VSb and semiconducting FeVSb, as revealed by an electron microscope. (bottom) Schematic of a high efficiency thermoelectric material. 1 nm hot cold electron flow heat flow e-

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Page 1: Materials Research Science and Atomic and electronic

Atomic and electronic structure of a Heusler alloy

Jason Kawasaki, University of Wisconsin-Madison

Materials Research Science and Engineering Centers, DMR-1720415

Heusler compounds are promising materials for next generationdevices for direct conversion of heat to electricity(thermoelectricity) and for magnetic computer memory.Performance in these applications depends sensitively on thearrangement of the atoms and the behavior of electrons, both ofwhich are hard to predict and harder to control for Heuslers.

We have grown thin films of FeVSb, a new Heusler compound,using molecular beam epitaxy, a kind of spray painting with“cans” of different atoms. The top picture is an electronmicroscope image showing the arrangement of the Fe, V, andSb as different size dots. On the right, the image shows thematerial we want, FeVSb. On the left, there is a completelynew, unexpected material, Fe2VSb, which is a new kind ofmagnet.

Mixing together these two materials at a length scale of justnanometers may actually improve the applicationsperformance. The bottom picture shows a schematic of a highefficiency thermoelectric device. The Fe2VSb inclusions (greensquares) block the flow of heat, allowing the Fe2VSb/FeVSbcomposite to maintain a large temperature difference betweenhot and cold sides. Electron flow from the hot side to the coldcreate electrical current that carries power.

2019 Seed Intellectual Merit

SbVFe

Fe1+xVSb FeVSb

(top) Atomically resolved interface between magnetic Fe2VSb and semiconducting FeVSb, as revealed by an electron microscope. (bottom) Schematic of a high efficiency thermoelectric material.

1 nm

hot coldelectron flow

heat flow

e-

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