jÈvtîÍuc¼tc uliæn¼!:rô q 1åÒ¸ð0 · title: jÈvtîÍuc¼tc uliæn¼!:rô q 1åÒ¸ð0...

To learn more about ON Semiconductor, please visit our website at www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected].

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

http://www.onsemi.com

mailto:Fairchild_questions%40onsemi.com?subject=System%20Intergration

December 2013

Thermal Characteristics

FQP6N80C / FQPF6N80CN-Channel QFET® MOSFET800 V, 5.5 A, 2.5 Ω

Description

©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1

www.fairchildsemi.com1

FQP6N

80C / FQ

PF6N80C

— N

-Channel Q

FET® M

OSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features• 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V,

ID = 2.75 A

• Low Gate Charge (Typ. 21 nC)

• Low Crss (Typ. 8 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FQP6N80C FQPF6N80C /FQPF6N80CT Unit

RθJC Thermal Resistance, Junction-to-Case, Max. 0.79 2.45 °C/WRθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/WRθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W

TO-220GDS TO-220F

GDS

G

S

D

* Drain current limited by maximum junction temperature.

Symbol Parameter FQP6N80C FQPF6N80C /FQPF6N80CT Unit

VDSS Drain-Source Voltage 800 VID Drain Current - Continuous (TC = 25°C) 5.5 5.5 * A

- Continuous (TC = 100°C) 3.2 3.2 * AIDM Drain Current - Pulsed (Note 1) 22 22 * AVGSS Gate-Source Voltage ± 30 VEAS Single Pulsed Avalanche Energy (Note 2) 680 mJIAR Avalanche Current (Note 1) 5.5 AEAR Repetitive Avalanche Energy (Note 1) 15.8 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsPD Power Dissipation (TC = 25°C) 158 51 W

- Derate above 25°C 1.27 0.41 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds.

300 °C

Package Marking and Ordering Information



FQP6N

80C / FQ

PF6N80C

— N

-Channel Q

FET® M

OSFET

Electrical Characteristics TC = 25°C unless otherwise noted.

Part Number Top Mark Package Reel Size Tape Width QuantityFQP6N80CFQP6N80C TO-220 N/A N/A 50 units

Packing MethodTube

TO-220F Tube N/A N/A 50 unitsFQPF6N80CFQPF6N80CTube N/A N/A 50 unitsFQPF6N80CTFQPF6N80CT TO-220F

Notes:1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 42 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ 5.5 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating temperature.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V∆BVDSS / ∆TJ

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C -- 0.97 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = 800 V, VGS = 0 V -- -- 10 µAVDS = 640 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 2.75 A -- 2.1 2.5 Ω

gFS Forward Transconductance VDS = 50 V, ID = 2.75 A -- 5.4 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1010 1310 pFCoss Output Capacitance -- 90 115 pFCrss Reverse Transfer Capacitance -- 8 11 pF

Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 5.5 A,

RG = 25 Ω

(Note 4)

-- 26 60 nstr Turn-On Rise Time -- 65 140 nstd(off) Turn-Off Delay Time -- 47 105 nstf Turn-Off Fall Time -- 44 90 nsQg Total Gate Charge VDS = 640 V, ID = 5.5 A,

VGS = 10 V (Note 4)

-- 21 30 nCQgs Gate-Source Charge -- 6 -- nCQgd Gate-Drain Charge -- 9 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 22 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A -- -- 1.4 Vtrr Reverse Recovery Time VGS = 0 V, IS = 5.5 A,

dIF / dt = 100 A/µs -- 615 -- ns

Qrr Reverse Recovery Charge -- 5.4 -- µC



FQP6N

80C / FQ

PF6N80C

— N

-Channel Q

FET® M

OSFET

!

0.2 0.4 0.6 0.8 1.0 1.2 1.410-1

100

101

150※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test25I DR

, Rev

erse

Dra

in Cu

rrent

[A]

VSD, Source-Drain voltage [V]

0 5 10 15 20 250

2

4

6

8

10

12

VDS = 400V

VDS = 160V

VDS = 640V

※ Note : ID = 6.0A

V GS, G

ate-

Sour

ce V

oltag

e [V

]

QG, Total Gate Charge [nC]

60 3 9 121

2

3

4

5

6

VGS = 20V

VGS = 10V

※ Note : TJ = 25

RDS

(ON)

[Ω],

Drai

n-So

urce

On-

Resis

tanc

e

ID, Drain Current [A]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

10-1 0 10110-2

10-1

100

101

VGSTop : 15.0 V

10.0 V 8.0 V 7.0 V 6.5 V 6.0 V

Bottom : 5.5 V

※ Notes : 1. 250μ s Pulse Test 2. TC = 25

I D, D

rain

Cur

rent

[A]

10

VDS, Drain-Source Voltage [V]

2 4 8 1010-1

100

101

150oC

25oC -55oC

※ Notes :1. VDS = 50V2. 250μ s Pulse Test

I D, D

rain

Cur

rent

[A]

6

VGS, Gate-Source Voltage [V]

10-1 0 1010

300

600

900

1200

1500Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd

Crss = Cgd

※ Notes ; 1. VGS = 0 V 2. f = 1 MHz

Crss

Coss

Ciss

Capa

citan

ce [p

F]

10




FQP6N

80C / FQ

PF6N80C

— N

-Channel Q

FET® M

OSFET

Typical Characteristics (Continued)

100

101

102

103

10-2

10-1

100

101

102

1 ms

100 µs

100 msDC

10 ms

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

I D, Drain C

urrent [A]


100 101 102 10310-2

10-1

100

101

102

10 µs

1 ms100 µs

100 msDC

10 ms

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

I D, Drain C

urren

t [A]


Figure 9-1. Maximum Safe Operating Areafor FQP6N80C

Figure 10. Maximum Drain Currentvs Case Temperature

Figure 7. Breakdown Voltage Variationvs Temperature

Figure 8. On-Resistance Variationvs Temperature

Figure 9-2. Maximum Safe Operating Areafor FQPF6N80C

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Notes : 1. VGS = 0 V 2. ID = 250 μA

BVDS

S, (

Norm

alize

d)Dr

ain-S

ource

Bre

akdo

wn V

oltag

e

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes : 1. VGS = 10 V 2. ID = 3.0 A

RDS

(ON)

, (No

rmal

ized)

Drai

n-So

urce

On-

Resis

tanc

e

TJ, Junction Temperature [oC]

25 50 75 100 125 1500

1

2

3

4

5

6

I D, D

rain

Cur

rent

[A]

TC, Case Temperature []



FQP6N

80C / FQ

PF6N80C

— N

-Channel Q

FET® M

OSFET

Z JC

(t), T

herm

al R

espo

nse

[o C/W

]Z

JC(t)

, The

rmal

Res

pons

e [o C

/W]

1 0 -5 1 0 -4 1 0 0 1 0 1

1 0 -2

1 0 -1

1 0 0

※ N o te s : 1 . Z θ J C( t ) = 2 .4 5 /W M a x . 2 . D u ty F a c to r , D = t1 / t 2

3 . T J M - T C = P D M * Z θ J C( t )

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

1 0 -3 1 0 -2 1 0 -1

t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]

1 0 -5 1 0 -4 1 0 0 1 0 1

1 0 -2

1 0 -1

1 0 0

※ N o te s : 1 . Z θ J C( t ) = 0 .7 9 /W M a x . 2 . D u ty F a c to r , D = t1 / t 2

3 . T J M - T C = P D M * Z θ J C( t )

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

1 0 -3 1 0 -2 1 0 -1

t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]

Typical Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FQP6N80C

Figure 11-2. Transient Thermal Response Curve for FQPF6N80C

t1

PDM

t2

t1

PDM

t2

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21EAS = L IAS

2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

VGSVGS

IG = const.


FQP6N

80C / FQ

PF6N80C

— N

-Channel Q

FET® M

OSFET


Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------


FQP6N

80C / FQ

PF6N80C

— N

-Channel Q

FET® M

OSFET



FQP6N

80C / FQ

PF6N80C

— N

-Channel Q

FET® M

OSFET

Mechanical Dimensions


Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003



FQP6N

80C / FQ

PF6N80C

— N

-Channel Q

FET® M

OSFET

Mechanical Dimensions

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight LeadPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003



TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FPS™

F-PFS™FRFET®

Global Power ResourceSM

GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

tm

®

FQP6N

80C / FQ

PF6N80C

— N

-Channel Q

FET® M

OSFET

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATIONN. American Technical Support: 800−282−9855 Toll FreeUSA/Canada

Europe, Middle East and Africa Technical Support:Phone: 421 33 790 2910

Japan Customer Focus CenterPhone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:Literature Distribution Center for ON Semiconductor19521 E. 32nd Pkwy, Aurora, Colorado 80011 USAPhone: 303−675−2175 or 800−344−3860 Toll Free USA/CanadaFax: 303−675−2176 or 800−344−3867 Toll Free USA/CanadaEmail: [email protected]

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your localSales Representative

© Semiconductor Components Industries, LLC

http://www.onsemi.com/

www.onsemi.com/site/pdf/Patent-Marking.pdf

jÈvtîÍuc¼tc uliæn¼!:rô q 1åÒ¸ð0 · title: jÈvtîÍuc¼tc uliæn¼!:rô q 1åÒ¸ð0...

Documents