june 12-17 2005morten bache1 the cavity soliton laser m. bache *, f. prati, g. tissoni, i....
DESCRIPTION
June Morten Bache3 The model: Broad area VCSEL with saturable absorber We use semiconductor rate equations with adiabatic elimination of the polarization, describing an active region where radiative recombination dominates and a passive region where nonradiative recombination dominates. Major bifurcation parameters: injected currents μ and γ. We fix γ=0.5. The detuning does not play any role except fixing the frequency of the field. N.G. Basov, IEEE J. Quant. Electr. QE-4, 855 (1968); C.H. Henry, J. Appl. Phys. 51, 3051 (1980); S.V. Fedorov et al., PRE 61, 5814 (2000). See also M. Yamada, IEEE J. Quant. Elec. 29, 1330 (1993). Optical field Absorber carrier density Amplifier carrier density linewidth enhancement factors loss rates injected currents, note the sign saturation parameter detuningTRANSCRIPT
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June 12-17 2005 Morten Bache 1
The Cavity Soliton Laser
M. Bache*, F. Prati, G. Tissoni, I. Protsenko, L. LugiatoDipartimento di Fisica e Matematica, Università dell’Insubria, Como (Italy)
M. BrambillaDipartimento di Fisica Interateneo, Università e Politecnico di Bari (Italy)
*Current address: Research Center COM, Technical University of Denmark
CLEO-EQEC Europe (Munich) June 12-17 2005
VCSEL with saturable absorber Cavity solitons and the cavity soliton laser The model Exciting the solitons Deleting the solitons
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June 12-17 2005 Morten Bache 2
Motivation: Cavity soliton laser?
What is a cavity soliton laser? Compact tunable laser Spatial solitons are supported
Excitation pulse: turn-on Deleting pulse: turn-off
Bistability required Saturable absorber included in
the model
Important: no holding beam needed to keep soliton alive!!!
field
inte
nsity
bifurcation parameter
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June 12-17 2005 Morten Bache 3
The model: Broad area VCSEL with saturable absorber
We use semiconductor rate equations with adiabatic elimination of the polarization, describing an active region where radiative recombination dominates and a passive region where nonradiative recombination dominates.
Major bifurcation parameters: injected currents μ and γ. We fix γ=0.5. The detuning does not play any role except fixing the frequency of the field.
N.G. Basov, IEEE J. Quant. Electr. QE-4, 855 (1968); C.H. Henry, J. Appl. Phys. 51, 3051 (1980); S.V. Fedorov et al., PRE 61, 5814 (2000). See also M. Yamada, IEEE J. Quant. Elec. 29, 1330 (1993).
nFsbn
NFbN
FiFniNiiF
n
N
2
2
2
1
1
111
Optical field
Absorber carrier density
Amplifier carrier density
linewidth enhancement factors
loss rates injected currents, note the signsaturation parameter
detuning
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June 12-17 2005 Morten Bache 4
1.35 1.40 1.45 1.50 1.55
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45 =0.5, s=10, =2, =0bN=0.01, bn=0.005
|F|2
Exciting a solitonA soliton may bemay be excited in the regime where the stable trivial solution coexists with a modulational instability (gray area). A suitably sized (space/time/duration/phase) Gaussian pulse is injected, and after turn-off the dynamics are followed.
possible soliton area
The soliton converges to a steady state after roughly 104 t.u. (app. 100 ns)
current value
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June 12-17 2005 Morten Bache 5
Exciting a soliton Exciting a soliton is possible if
Peak field intensity inside certain regime Beyond regime no soliton is created Injected profile has proper width Injected field phase not important!!
1.0 1.5 2.0 2.5 3.00.0
0.5
1.0
1.5
0.1
1
10
Dpe
ak(t=
inj)
|Finj
||F
peak
(t= in
j)|2
soliton is excited
Soliton excited
Soliton not excited
0 100 200 3000.0
0.5
1.0
1.5
2.0
|Fpe
ak|2
timeInjected field on
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June 12-17 2005 Morten Bache 6
Existence of the solitonsThe solitons exist in a certain range of the injected current of the active material
Region 1 the soliton starts oscillating and eventually breaks down
Region 2 the solitons oscillate, but are eventually stable
Region 3 the soliton becomes modulationally unstable
Region 4 does not support solitons because the background is unstable
1.36 1.38 1.40 1.42 1.44 1.46 1.48 1.50 1.520.91.01.11.21.31.41.5
N
-0.5
-0.4
-0.3
-0.2
-0.1
n
0.00.10.20.30.40.50.6
|F|2
-15 -10 -5 0 5 10 15
0.91.01.11.21.31.41.5
x
-0.5-0.4-0.3-0.2-0.10.00.00.10.20.30.40.50.6
profile for μ=1.461 2 3 4
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June 12-17 2005 Morten Bache 7
Deleting the solitons Field frequency ω0+Ω depends
on the field intensity
The field phase is random Impossible to “engineer” an
injected field with a given phase and frequency to delete the soliton
Soliton can be deleted nonetheless!!
21)(
Fs
Strong field: the soliton is deleted
Weaker field: the soliton survives
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June 12-17 2005 Morten Bache 8
Deleting the solitons Deleting a soliton
Peak field intensity beyond the regime found before Thus, if the field is too too weak, soliton is not destroyed
-5 0 5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
|F(y
=0,t=
inj)|2
x
Increasing injected field strength
Soliton deleted
Soliton not deleted
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
0.5
1.0
1.5
0.1
1
Dpe
ak(t=
inj)
|Finj
|
Soliton excited Soliton not excited Soliton deleted Soliton not deleted
|Fpe
ak(t=
inj)|2
soliton survives
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June 12-17 2005 Morten Bache 9
Exciting and deleting more solitons Neighbor solitons may be excited as well as deleted. The existing ones are not affected as long as a certain
distance between them is kept.
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June 12-17 2005 Morten Bache 10
Model parameters Linewidth enhancement factors
α=2 (active material) β=0 (passive material) For larger β solitons appear to become unstable
Loss rates Carrier dynamics (much) slower than field dynamics If carriers are too slow, solitons become oscillatory and
eventually unstable For faster carrier dynamics solitons can be excited
spontaneously
The solitons are stable due to a balance between field-matter interaction
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June 12-17 2005 Morten Bache 11
Conclusions and outlook Excite and delete a soliton in broad area VCSEL with
saturable absorber existence regime in bistable region does not depend on phase excitation and deletion threshold several solitons excited and deleted individually
Cavity Soliton Laser can be realized No holding beam (no thermal problems) Soliton has maximum contrast Beam entirely determined by the radiation-matter interaction
and not the boundary conditions
M. Bache et al., submitted to Applied Physics B - Lasers and Optics (special issue on saturable absorbers)