ion beam synthesis and processing of advanced...
TRANSCRIPT
Ion Beam Synthesis andProcessing of Advanced
Materials
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
MATERfALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 647
Ion Beam Synthesis andProcessing of Advanced
Materials
Symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.
EDITORS:
Steven C. MossThe Aerospace Corporation
Los Angeles, California, U.S.A.
Karl-Heinz HeinigForschungszentrum Rossendorf
Dresden, Germany
David B. PokerOak Ridge National LaboratoryOak Ridge, Tennessee, U.S.A.
Materials Research SocietyWarrendale, Pennsylvania
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
cambridge university press Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo, Delhi, Mexico City
Cambridge University Press32 Avenue of the Americas, New York ny 10013-2473, USA
Published in the United States of America by Cambridge University Press, New York
www.cambridge.orgInformation on this title: www.cambridge.org/9781107412361
Materials Research Society506 Keystone Drive, Warrendale, pa 15086http://www.mrs.org
© Materials Research Society 2001
This publication is in copyright. Subject to statutory exceptionand to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written permission of Cambridge University Press.
This publication has been registered with Copyright Clearance Center, Inc.For further information please contact the Copyright Clearance Center,Salem, Massachusetts.
First published 2001 First paperback edition 2013
Single article reprints from this publication are available throughUniversity Microfilms Inc., 300 North Zeeb Road, Ann Arbor, mi 48106
CODEN: MRSPDH
isbn 978-1-107-41236-1 Paperback
Cambridge University Press has no responsibility for the persistence oraccuracy of URLs for external or third-party internet websites referred to inthis publication, and does not guarantee that any content on such websites is,or will remain, accurate or appropriate.
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
CONTENTS
Preface xiii
Materials Research Society Symposium Proceedings xiv
FUNDAMENTALS AND DEFECTKINETICS I
* Improving the Understanding of Ion-Beam-Induced DefectFormation and Evolution by Atomistic Computer Simulations O2.1
Matthias Posselt
* Understanding Ion Beam Synthesis of Nanostructures: Modelingand Atomistic Simulations O2.3
M. Strobel, K.-H. Heinig, and W. Moller
* Interactions of Point Defects and Impurities With Open VolumeDefects in Silicon O2.4
J.S. Williams, M.C. Ridgway, M.J. Conway, J. Wong-Leung,B.C. Williams, M. Petravic, F. Fortuna, M.-O. Ruault,and H. Bernas
FUNDAMENTALS AND DEFECTKINETICS II
Coordination Structure of Implanted Manganese Ions in SilicaGlass O3.1
Kohei Fukumi, Akiyoshi Chayhara, Hiroyuki Kageyama,Kohei Kadono, Naoyuki Kitamura, Hirohsi Mizoguchi,Yuji Horino, and Masaki Makihara
MATERIALS WITH NOVELELECTRICAL, OPTICAL, AND
MAGNETIC PROPERTIES
* Ion Implanted Er and Tb in SiO2 for Electroluminescence in MOSDiodes O4.1
Ch. Buchal, S. Coffa, S. Wang, and R. Carius
Optical and Structural Changes of Fe Implanted Sapphire O4.2Carlos P. Marques, Eduardo J. Alves, Carl J. McHargue,Maria F. da Silva, Jose C. Soares, Rosario Correia,Manuel J. Soares, and Teresa Monteiro
•Invited Paper
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
MeV Ion Implantation Doping of Diamond O4.3S. Prawer, D.N. Jamieson, K.W. Nugent, R. Walker,C. Uzan-Saguy, and R. Kalish
Enhancement of Porosity and Surface Roughness of CuredPhenolic Resin by Ion Implantation O4.8
R.L. Zimmerman, D. Ila, C.C. Smith, A.L. Evelyn,D.B. Poker, and D.K. Hensley
POSTER SESSION
Secondary Ion Mass Spectrometry With Gas Cluster Ion Beams O5.1Noriaki Toyoda, Jiro Matsuo, Takaaki Aoki, Shunichi Chiba,Isao Yamada, David B. Fenner, and Richard Torti
Simulations and Argon-Cluster-Ion Smoothing of Surfaces O5.2D.B. Fenner, D.W. Dean, V. DiFilippo, L.P. Allen,J. Hautala, and P.B. Mirkarimi
Atomistic Simulations of the Ostwald Ripening of Si NanoparticlesIon Beam Synthesized in SiO2 O5.7
C. Bonafos, M. Carrada, B. Colombeau, A. Altibelli,G. Ben Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez,J.R. Morante, and A. Claverie
Properties of Gallium Disorder and Gold Implants in GaN O5.9W. Jiang, W.J. Weber, S. Thevuthasan,and V. Shutthanandan
Dynamical X-ray Diffraction Analysis of Solid Phase EpitaxyGrowth of Sii.yCy Heterostructures O5.10
J. Rodriguez-Viejo and Zakia el-Felk
Characterization of Thin Layers of Metal Clusters Embedded inSilica Glass Formed by High Dose Ion Implantation O5.ll
P.S. Chung, S.P. Wong, W.Y. Cheung, N. Ke, W.K. Lee,and C.W. Chan
Nanoparticles of Metallic Cobalt and Nickel Prepared by IonImplantation Into SiO2 O5.12
O. Cintora-Gonzalez, C. Estournes, D. Muller,M. Richard-Plouet, A. Traverse, J.L. Guille, and J.J. Grob
* Invited Paper
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
Modification of the Electronic Properties of a-Si!_xCx:H by Fe+ IonImplantation O5.13
T. Tsvetkova, S. Balabanov, B. Amov, Ch. Angelov, J. Zuk,D. Maczka, G.J. Adriaenssens, and K. Iakoubovskii
Gold Nanoclusters Formed by Ion-Implantation Into Bi2TeO5 O5.14A. Kling, M.F. da Silva, J.C. Soares, P.F.P. Fichtner,L. Amaral, F.C. Zawislak, I. Foldvari, and A. Peter
Post Implantation Treatment of Silicon Carbide-Based Sensors forHydrogen Detection Properties Enhancement O5.15
I.C. Muntele, C.I. Muntele, D. Ila, R.L. Zimmerman,D.B. Poker, and D.K. Hensley
Chemical Effects In Ion Implantation Induced Quantum WellIntermixing O5.16
Todd W. Simpson, Paul G. Piva, and Ian V. Mitchell
Modification of Carbon Related Films With Energy Beams O5.18Hiroshi Naramoto, Yonghua Xu, Kazumasa Narumi,Xiaodong Zhu, Jiri Vacik, Shunya Yamamoto,and Kiyoshi Miyashita
Synthesis of Continuous SmSi2 Layers on Si by Samarium IonImplantation Using a Metal Vapor Vacuum Arc Ion Source O5.29
X.Q. Cheng, H.N. Zhu, and B.X. Liu
ION BEAM INDUCED SLICINGAND FOCUSED ION BEAM
APPLICATIONS
* Optimization of the Ion-Cut Process in Si and SiC O6.1O.W. Holland, D.K. Thomas, and R.B. Gregory
Ion Beam Slicing of Single Crystal Oxide Thin Films O6.2S. Thevuthasan, V. Shutthanandan, W. Jiang,and W. J. Weber
Buried Oxide Precipitates in a Si Wafer Due to He IonImplantation and High-Temperature Oxidation O6.3
Sadao Nakashima, Jyoji Nakata, Junzou Hayashi,and Kazuo Imai
Co-Implantation and the Role of Implant Damage in the ThermalStability of Implanted Helium in Indium Phosphide O6.4
Todd W. Simpson and Ian V. Mitchell
*Invited Paper
vii
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
Cu Gettering in Si Cavities Observed by Positron AnnihilationDoppler Broadening O6.5
H. Schut, A. van Veen, and S.W.H. Eijt
Effects of Ga-Irradiation on Properties of Materials Processed bya Focused Ion Beam (FIB) O6.6
H.D. Wanzenboeck, H. Langfischer, A. Lugstein,E. Bertagnolli, U. Grabner, P. Pongratz, B. Basnar,J. Smoliner, and E. Gornik
MET AST ABLE PHASES, PLASTICFLOW, AND PATTERNING OF
SURFACES
Spontaneous Formation of Nanometer-Scale Self-OrganizedStructures in Ag-Cu Alloys Under Irradiation O7.1
Raul A. Enrique and Pascal Bellon
Spontaneous Crystalline Multilayer Formation in Ni Implanted Alat 100 K O7.2
Alexandre Cuenat, Aicha Hessler-Wyser, Max Dobeli,and Rolf Gotthardt
SURFACE MODIFICATION, SUCHAS HARDNESS AND TEXTURE
* Ion Beam Assisted Texture Evolution During Thin FilmDeposition of Metal Nitrides O9.1
Bernd Stritzker, Jurgen W. Gerlach, Stephan Six,and Bemd Rauschenbach
* Relating Nanostructures to Mechanical Properties inIon-Implanted Materials O9.3
David M. Follstaedt, James A. Knapp, Samuel M. Myers,and Gary A. Petersen
Ar Cluster Ion Bombardment Effects on Semiconductor Surfaces O9.4Toshio Seki, Kazumichi Tsumura, Takaaki Aoki,Jiro Matsuo, Gikan H. Takaoka, and Isao Yamada
Time-Resolved X-ray Scattering Study of Co Surface EvolutionDuring Low-Energy Ion Irradiation O9.5
O. Malis, J.M. Pomeroy, R.L. Headrick, and J.D. Brock
* Invited Paper
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
ION BEAM SYNTHESIS OFNANOSTRUCTURES AND
THIN LAYERS I
Synthesis of Spatially Controlled Nanostructures by IonImplantation in V-Grooves on (001) Si Surfaces O10.2
Torsten Mtiller, Karl-Heinz Heinig, Bernd Schmidt,Arndt Miicklich, and Wolfhard Moller
POSTER SESSION
Synthesis of B-C-N Thin Films by Ion-Beam-Assisted Depositionand Their Mechanical Properties O11.5
Akihito Matsumuro, Yoshimasa Kato, and Hidenobu Ohta
Deposition of Diamond-Like Carbon Films Using Plasma BasedIon Implantation With Bipolar Pulses O11.7
S. Miyagawa and Y. Miyagawa
Effect of Substrate Materials on Mechanical Propertiesand Microstructure of Carbon Nitride Films Prepared byIon-Beam-Assisted Deposition O11.8
Hidenobu Ohta, Akihito Matsumuro, and Yutaka Takahashi
Studies on Titanium Nitride Coatings—Effect of IonBombardment O11.9
K. Deenamma Vargheese and G. Mohan Rao
Mechanical Properties of AIN Thin Films Prepared by Ion BeamAssisted Deposition Oil.10
Shuichi Miyabe, Toshiyuki Okawa, Nobuaki Kitazawa,Yoshihisa Watanabe, and Yoshikazu Nakamura
Modeling for the Diamond-Like Carbon Film Synthesis by PlasmaBased Ion Implantation Ol 1.12
Yoshiko Miyagawa, Flyura Djurabekova, and Soji Miyagawa
Metal-Alloy Nanocluster Formation in Silica Glass by SequentialIon Implantation Oil.18
G. Battaglin, E. Cattaruzza, F. Gonella, F. D'Acapito,C. de Julian Fernandez, G. Mattel, C. Maurizio, P. Mazzoldi,and C. Sada
Effect of Iodine and Strontium Ion Implantation on theMicrostructure of Cubic Zirconia O11.19
Sha Zhu, Lumin Wang, Shixin Wang, and Rodney C. Ewing
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
Evolution of Ion Beam Synthesized Au Nanoclusters in SiO2
Under Ion Irradiation O11.20Bernd Schmidt, Karl-Heinz Heinig, and Arndt Miicklich
The Control of Gold Nanocluster Sizes in Dielectric Thin Films viaIon Beam Assisted Deposition O11.22
S. Schiestel, C.A. Carosella, G.K. Hubler, S.B. Qadri,D. Knies, and R.M. Stroud
Kinetics of Ion Beam Synthesis of Sn and Sb Clusters in SiO2
Layers O11.23Sabina Spiga, Sandro Ferrari, Marco Fanciulli,Bernd Schmidt, Karl-Heinz Heinig, Rainer Grotzschel,Arndt Miicklich, and Giuseppe Pavia
Lithium Nanocluster Formation in Li+ - Ion Implanted MgO O11.24A. van Veen, M.A. van Huis, A.V. Fedorov, H. Schut,C.V. Falub, S.W.H. Eijt, F. Labohm, B.J. Kooi,and J.Th.M. De Hosson
High-Fluence Implantation of Erbium Into Silicon-GermaniumAlloys: Structural and Thermal Properties O11.26
V. Touboltsev, J. Raisanen, E. Johnson, A. Johansen,and L. Sarholt
Growth and Characterization of Erbium Silicides Synthesized byMetal Vapor Vacuum Arc Ion Implantation O11.27
X.W. Zhang, W.Y. Cheung, and S.P. Wong
Influence of Carbon on Erbium Lattice Location in Si:Er O11.28X.T. Ren and M.B. Huang
Ion Beam Radiation Effects on In As Semiconductor Quantum Dots Oil.31J. Zhu, M. Thaik, M. Yakimov, S. Oktyabrsky,A.E. Kaloyeros, and M.B. Huang
Ion-Plating Deposition of MgO Protective Layer for AC-PlasmaDisplay Panels O11.33
Kazuo Uetani, Hiroshi Kajiyama, Akira Kato,Isao Tokomoto, Yasuhiro Koizumi, Koichi Nose,Yasushi Ihara, Ken-ichi Onisawa, and Tetsuroh Minemura
Effects of ArF Excimer Irradiation on Multi-Energy Ge and SeIon Implanted Silica O11.34
R.H. Magruder III, R.A. Weller, R.A. Weeks, J. Wehrmeyer,R.A. Zuhr, and D.K. Hensley
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
ION BEAM SYNTHESIS OFNANOSTRUCTURES AND
THIN LAYERS II
* Nanophase Composites Produced by Ion Implantation:Properties, Problems, and Potential O12.1/R7.1
A. Meldrum, L.A. Boatner, C.W. White,and R.F. Haglund, Jr.
Ion Beam Enhanced Formation and Luminescence of SiNanoclusters from fl-SiOx O12.3/R7.3
Yohan Sun, Se-Young Seo, Jung H. Shin, T.G. Kim,C.N. Whang, and J.H. Song
ION-SOLID INTERACTIONS FOROPTOELECTRONICS/PHOTONICS AND
MICROELECTRONIC MA TERIALS
Synthesis of III-Nx-Vlx Thin Films by N Ion Implantation O13.3/R8.3K.M. Yu, W. Walukiewicz, W. Shan, J. Wu, J.W. Beeman,J.W. Ager III, E.E. Haller, and M.C. Ridgway
Doping of GaN by Ion Implantation O13.4/R8.4Eduardo J. Alves, C. Liu, Maria F. da Silva, Jose C. Soares,Rosario Correia, and Teresa Monteiro
Correlation Between Structural and Optical Properties of SiNanocrystals in SiO2: Model for the Visible Light Emission O13.5/R8.5
M. Lopez, B. Garrido, O. Gonzalez, C. Garcia,A. Perez-Rodriguez, J.R. Morante, C. Bonafos, M. Carrada,R.J. Rodriguez, and J. Montserrat
SEMICONDUCTORS ANDELECTRONIC MA TERIALS
A Damage Model for Disordered Structures in Ion IrradiatedSilicon O14.1/R9.1
Ju-Yin Cheng and J. Murray Gibson
Determination of the Distribution of Ion Implantation Boron inSilicon O14.3/R9.3
Te-Sheng Wang, A.G. Cullis, E.J.H. Collart, A.J. Murrell,and M.A. Foad
•Invited Paper
xi
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
Crystallization of Isolated Amorphous Zones in SemiconductorMaterials O14.4/R9.4
Eric P. Hollar, Ian M. Robertson, and Igor Jencic
Investigation of Irradiation Damage in Silicon DioxidePolymorphs Using Cathodoluminescence Microanalysis O14.5/R9.5
Marion A. Stevens-Kalceff
* Inverse Ostwald Ripening and Self-Organization of NanoclustersDue to Ion Irradiation O14.6/R9.6
K.-H. Heinig, B. Schmidt, M. Strobel, and H. Bernas
Impact of Boron and Gallium on Defects Production in Silicon O14.7/R9.7Aurangzeb Khan, Nethaji Dharmarasu,Masafumi Yamaguchi, Kenji Araki, Tuong K. Vu,Tatsuo Saga, Takao Abe, Osamu Annzawa, M. Imaizumi,and Sumio Matsuda
Post Annealing Studies of C60 Ion Implanted Thin Films O14.8/R9.8Nethaji Dharmarasu, Kannan L. Narayanan, Nabuaki Kojima,Yoshio Ohshita, and Masafumi Yamaguchi
Unusual Change in Columnar Defect Morphology in YBCO UponAnnealing O14.9/R9.9
Y. Yan, M.A. Kirk, A. Petrean, and L. Paulius
Ion-Implantation Generated Nanovoids in Si and MgO Monitoredby High Resolution Positron Beam Analysis O14.ll/R9.ll
S.W.H. Eijt, C.V. Falub, A. van Veen, H. Schut,P.E. Mijnarends, M.A. van Huis, and A.V. Fedorov
Author Index
Subject Index
* Invited Paper
xn
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
PREFACE
Symposium O, "Ion Beam Synthesis and Processing of Advanced Materials," was heldNovember 27-29 at the 2000 MRS Fall Meeting in Boston, Massachusetts. 116 papers werepresented in fourteen sessions including two poster sessions. The sessions were well attendedand the discussions were lively.
The presentations during this three-day symposium emphasize the broad scientific andtechnological interest in ion-beam applications to synthesis and processing of advancedmaterials. A significant portion of the symposium addressed ion-beam processing andsynthesis at the nano-scale, including work on nanocrystals, quantum dots, quantum wells,nanotubes, and self-organized structures, as well as heterostructures and other thin films.Attendees heard discussions on defect kinetics, growth, ion erosion, surface smoothing,texturing and pattern formation, cluster-beam assisted processing, processing and synthesis formechanical properties, and ion slicing/smart cut processing. Materials ranged over metals,semiconductors, dielectrics, and organics. Materials modification from the nano-scale to themeso-scale to the macro-scale was discussed. Technological applications ranged over thin-filmtransistors, microelectronics, optical materials, high-temperature superconductors, sensors,diamond-like coatings, hard coatings, and magnetic recording media. Several papers discussedmodeling and analysis of these processes using techniques including molecular dynamicsimulations. Three joint sessions were held with Symposium R, "Microstructural Processes inIrradiated Materials."
Session chairs included: T. E. Haynes, D. M. Follstaedt, O. W. Holland, A. Meldrum,J. C. Soares, C. J. Buchal, I. M. Robertson, and W. J. Weber. The organizers gratefullyacknowledge their contributions.
Symposium support was provided by The Aerospace Corporation, Epion Corporation,Forschungszentrum Rossendorf, National Electrostatics Corporation, Oak Ridge NationalLaboratory, and Varian Associates. The symposium organizers, proceedings editor, and theMaterials Research Society gratefully acknowledge their support.
Steven C. MossKarl-Heinz HeinigDavid B. Poker
December, 2000
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Volume 609 Amorphous and Heterogeneous Silicon Thin Films 2000, R.W. Collins, H.M. Branz,M. Stutzmann, S. Guha, H. Okamoto, 2001, ISBN: 1-55899-517-X
Volume 610 Si Front-End Processing Physics and Technology of Dopant-Defect Interactions II, A. Agarwal,L. Pelaz, H-H. Vuong, P. Packan, M. Kase, 2001, ISBN: 1-55899-518-8
Volume 611 Gate Stack and Silicide Issues in Silicon Processing, L.A. Clevenger, S.A. Campbell, P.R. Besser,S.B. Herner, J. Kittl, 2001, ISBN: 1-55899-519-6
Volume 612 Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics,G.S. Oehrlein, K. Maex, Y-C. Joo, S. Ogawa, J.T. Wetzel, 2001, ISBN: 1-55899-520-X
Volume 613 Chemical-Mechanical Polishing 2000 Fundamentals and Materials Issues, R.K. Singh, R. Bajaj,M. Moinpour, M. Meuris, 2001, ISBN: 1-55899-521-8
Volume 614 Magnetic Materials, Structures and Processing for Information Storage, B.J. Daniels, T.P. Nolan,M.A. Seigler, S.X. Wang, C.B. Murray, 2001, ISBN: 1-55899-522-6
Volume 615 Polycrystalline Metal and Magnetic Thin Films 2001, B.M. Clemens, L. Gignac, J.M. MacLaren,O. Thomas, 2001, ISBN: 1-55899-523-4
Volume 616 New Methods, Mechanisms and Models of Vapor Deposition, H.N.G. Wadley, G.H. Gilmer,W.G. Barker, 2000, ISBN: 1-55899-524-2
Volume 617 Laser-Solid Interactions for Materials Processing, D. Kumar, D.P. Norton, C.B. Lee, K. Ebihara,X.X. Xi, 2001, ISBN: 1-55899-525-0
Volume 618 Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films,J.M. Millunchick, A-L. Barabasi, N.A. Modine, E.D. Jones, 2000, ISBN: 1-55899-526-9
Volume 619 Recent Developments in Oxide and Metal Epitaxy Theory and Experiment, M. Yeadon,S. Chiang, R.F.C. Farrow, J.W. Evans, O. Auciello, 2000, ISBN: 1-55899-527-7
Volume 620 Morphology and Dynamics of Crystal Surfaces in Complex Molecular Systems, J. DeYoreo,W. Casey, A. Malkin, E. Vlieg, M. Ward, 2001, ISBN: 1-55899-528-5
Volume 621 Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, K.L. Jensen,RJ . Nemanich, P. Holloway, T. Trottier, W. Mackie, D. Temple, J. Itoh, 2001,ISBN: 1-55899-529-3
Volume 622 Wide-Bandgap Electronic Devices, R.J. Shul, F. Ren, W. Pletschen, M. Murakami, 2001,ISBN: 1-55899-530-7
Volume 623 Materials Science of Novel Oxide-Based Electronics, D.S. Ginley, J.D. Perkins, H. Kawazoe,D.M. Newns, A.B. Kozyrev, 2000, ISBN: 1-55899-531-5
Volume 624 Materials Development for Direct Write Technologies, D.B. Chrisey, D.R. Gamota, H. Helvajian,D.P. Taylor, 2001, ISBN: 1-55899-532-3
Volume 625 Solid Freeform and Additive Fabrication 2000, S.C. Danforth, D. Dimos, F.B. Prinz, 2000,ISBN: 1-55899-533-1
Volume 626 Thermoelectric Materials 2000 The Next Generation Materials for Small-Scale Refrigerationand Power Generation Applications, T.M. Tritt, G.S. Nolas, G.D. Mahan, D. Mandrus,M.G. Kanatzidis, 2001, ISBN: 1-55899-534-X
Volume 627 The Granular State, S. Sen, M.L. Hunt, 2001, ISBN: 1-55899-535-8Volume 628 Organic/Inorganic Hybrid Materials 2000, R. Laine, C. Sanchez, C.J. Brinker, E. Giannelis,
2001, ISBN: 1-55899-536-6Volume 629 Interfaces, Adhesion and Processing in Polymer Systems, S.H. Anastasiadis, A. Karim,
G.S. Ferguson, 2001, ISBN: 1-55899-537-4Volume 633 Nanotubes and Related Materials, A.M. Rao, 2001, ISBN: 1-55899-543-9Volume 634 Structure and Mechanical Properties of Nanophase Materials Theory and Computer Simulations
vs. Experiment, D. Farkas, H. Kung, M. Mayo, H. Van Swygenhoven, J. Weertman, 2001,ISBN: 1-55899-544-7
Volume 635 Anisotropic Nanoparticles Synthesis, Characterization and Applications, SJ. Stranick, P. Searson,L.A. Lyon, C D . Keating, 2001, ISBN: 1-55899-545-5
Volume 636 Nonlithographic and Lithographic Methods of Nanofabrication From Ultralarge-Scale Integrationto Photonics to Molecular Electronics, L. Merhari, J.A. Rogers, A. Karim, D.J. Norris, Y. Xia,2001, ISBN: 1-55899-546-3
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Volume 637 Microphotonics Materials, Physics and Applications, K. Wada, P. Wiltzius, T.F. Krauss,K. Asakawa, E.L. Thomas, 2001, ISBN: 1-55899-547-1
Volume 638 Microcrystalline and Nanocrystalline Semiconductors 2000, P.M. Fauchet, J.M. Buriak,L.T. Canham, N. Koshida, B.E. White, Jr., 2001, ISBN: 1-55899-548-X
Volume 639 GaN and Related Alloys 2000, U. Mishra, M.S. Shur, CM. Wetzel, B. Gil, K. Kishino, 2001,ISBN: 1-55899-549-8
Volume 640 Silicon Carbide Materials, Processing and Devices, A.K. Agarwal, J.A. Cooper, Jr., E. Janzen,M. Skowronski, 2001, ISBN: 1-55899-550-1
Volume 642 Semiconductor Quantum Dots II, R. Leon, S. Fafard, D. Huffaker, R. N tzel, 2001,ISBN: 1-55899-552-8
Volume 643 Quasicyrstals Preparation, Properties and Applications, E. Belin-Ferr, P.A. Thiel, A-P. Tsai,K. Urban, 2001, ISBN: 1-55899-553-6
Volume 644 Supercooled Liquid, Bulk Glassy and Nanocrystalline States of Alloys, A. Inoue, A.R. Yavari,W.L. Johnson, R.H. Dauskardt, 2001, ISBN: 1-55899-554-4
Volume 646 High-Temperature Ordered Intermetallic Alloys IX, J.H. Schneibel, S. Hanada, K.J. Hemker,R.D. Noebe, G. Sauthoff, 2001, ISBN: 1-55899-556-0
Volume 647 Ion Beam Synthesis and Processing of Advanced Materials, D.B. Poker, S.C. Moss, K-H. Heinig,2001, ISBN: 1-55899-557-9
Volume 648 Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures,S.C. Moss, 2001, ISBN: 1-55899-558-7
Volume 649 Fundamentals of Nanoindentation and Nanotribology II, S.P. Baker, R.F. Cook, S.G. Corcoran,N.R. Moody, 2001, ISBN: 1-55899-559-5
Volume 650 Microstructural Processes in Irradiated Materials 2000, G.E. Lucas, L. Snead, M.A. Kirk, Jr.,R.G. Elliman, 2001, ISBN: 1-55899-560-9
Volume 651 Dynamics in Small Confining Systems V, J.M. Drake, J. Klafter, P. Levitz, R.M. Overney,M. Urbakh, 2001, ISBN: 1-55899-561-7
Volume 652 Influences of Interface and Dislocation Behavior on Microstructure Evolution, M. Aindow, M. Asta,M.V. Glazov, D.L. Medlin, A.D. Rollet, M. Zaiser, 2001, ISBN: 1-55899-562-5
Volume 653 Multiscale Modeling of Materials 2000, L.P. Kubin, J.L. Bassani, K. Cho, H. Gao,R.L.B. Selinger, 2001, ISBN: 1-55899-563-3
Volume 654 Structure-Property Relationships of Oxide Surfaces and Interfaces, C.B. Carter, X. Pan, K. Sickafus,H.L. Tuller, T. Wood, 2001, ISBN: 1-55899-564-1
Volume 655 Ferroelectric Thin Films IX, P.C. Mclntyre, S.R. Gilbert, M. Miyasaka, R.W. Schwartz,D. Wouters, 2001, ISBN: 1-55899-565-X
Volume 657 Materials Science of Microelectromechanical Systems (MEMS) Devices III, M. deBoer, M. Judy,H. Kahn, S.M. Spearing, 2001, ISBN: 1-55899-567-6
Volume 658 Solid-State Chemistry of Inorganic Materials III, M.J. Geselbracht, J.E. Greedan, D.C. Johnson,M.A. Subramanian, 2001, ISBN: 1-55899-568-4
Volume 659 High-Temperature Superconductors Crystal Chemistry, Processing and Properties,U. Balachandran, H.C. Freyhardt, T. Izumi, D.C. Larbalestier, 2001, ISBN: 1-55899-569-2
Volume 660 Organic Electronic and Photonic Materials and Devices, S.C. Moss, 2001, ISBN: 1-55899-570-6Volume 661 Filled and Nanocomposite Polymer Materials, A.I. Nakatani, R.P. Hjelm, M. Gerspacher,
R. Krishnamoorti, 2001, ISBN: 1-55899-571-4Volume 662 Biomaterials for Drug Delivery and Tissue Engineering, S. Mallapragada, R. Korsmeyer,
E. Mathiowitz, B. Narasimhan, M. Tracy, 2001, ISBN: 1-55899-572-2
Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society
www.cambridge.org© in this web service Cambridge University Press
Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information