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Page 1: Ion Beam Synthesis and Processing of Advanced Materialsassets.cambridge.org/97811074/12361/frontmatter/...and Microstructure of Carbon Nitride Films Prepared by Ion-Beam-Assisted Deposition

Ion Beam Synthesis andProcessing of Advanced

Materials

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

Page 2: Ion Beam Synthesis and Processing of Advanced Materialsassets.cambridge.org/97811074/12361/frontmatter/...and Microstructure of Carbon Nitride Films Prepared by Ion-Beam-Assisted Deposition

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

Page 3: Ion Beam Synthesis and Processing of Advanced Materialsassets.cambridge.org/97811074/12361/frontmatter/...and Microstructure of Carbon Nitride Films Prepared by Ion-Beam-Assisted Deposition

MATERfALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 647

Ion Beam Synthesis andProcessing of Advanced

Materials

Symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

EDITORS:

Steven C. MossThe Aerospace Corporation

Los Angeles, California, U.S.A.

Karl-Heinz HeinigForschungszentrum Rossendorf

Dresden, Germany

David B. PokerOak Ridge National LaboratoryOak Ridge, Tennessee, U.S.A.

Materials Research SocietyWarrendale, Pennsylvania

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

Page 4: Ion Beam Synthesis and Processing of Advanced Materialsassets.cambridge.org/97811074/12361/frontmatter/...and Microstructure of Carbon Nitride Films Prepared by Ion-Beam-Assisted Deposition

cambridge university press Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo, Delhi, Mexico City

Cambridge University Press32 Avenue of the Americas, New York ny 10013-2473, USA

Published in the United States of America by Cambridge University Press, New York

www.cambridge.orgInformation on this title: www.cambridge.org/9781107412361

Materials Research Society506 Keystone Drive, Warrendale, pa 15086http://www.mrs.org

© Materials Research Society 2001

This publication is in copyright. Subject to statutory exceptionand to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written permission of Cambridge University Press.

This publication has been registered with Copyright Clearance Center, Inc.For further information please contact the Copyright Clearance Center,Salem, Massachusetts.

First published 2001 First paperback edition 2013

Single article reprints from this publication are available throughUniversity Microfilms Inc., 300 North Zeeb Road, Ann Arbor, mi 48106

CODEN: MRSPDH

isbn 978-1-107-41236-1 Paperback

Cambridge University Press has no responsibility for the persistence oraccuracy of URLs for external or third-party internet websites referred to inthis publication, and does not guarantee that any content on such websites is,or will remain, accurate or appropriate.

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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CONTENTS

Preface xiii

Materials Research Society Symposium Proceedings xiv

FUNDAMENTALS AND DEFECTKINETICS I

* Improving the Understanding of Ion-Beam-Induced DefectFormation and Evolution by Atomistic Computer Simulations O2.1

Matthias Posselt

* Understanding Ion Beam Synthesis of Nanostructures: Modelingand Atomistic Simulations O2.3

M. Strobel, K.-H. Heinig, and W. Moller

* Interactions of Point Defects and Impurities With Open VolumeDefects in Silicon O2.4

J.S. Williams, M.C. Ridgway, M.J. Conway, J. Wong-Leung,B.C. Williams, M. Petravic, F. Fortuna, M.-O. Ruault,and H. Bernas

FUNDAMENTALS AND DEFECTKINETICS II

Coordination Structure of Implanted Manganese Ions in SilicaGlass O3.1

Kohei Fukumi, Akiyoshi Chayhara, Hiroyuki Kageyama,Kohei Kadono, Naoyuki Kitamura, Hirohsi Mizoguchi,Yuji Horino, and Masaki Makihara

MATERIALS WITH NOVELELECTRICAL, OPTICAL, AND

MAGNETIC PROPERTIES

* Ion Implanted Er and Tb in SiO2 for Electroluminescence in MOSDiodes O4.1

Ch. Buchal, S. Coffa, S. Wang, and R. Carius

Optical and Structural Changes of Fe Implanted Sapphire O4.2Carlos P. Marques, Eduardo J. Alves, Carl J. McHargue,Maria F. da Silva, Jose C. Soares, Rosario Correia,Manuel J. Soares, and Teresa Monteiro

•Invited Paper

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Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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MeV Ion Implantation Doping of Diamond O4.3S. Prawer, D.N. Jamieson, K.W. Nugent, R. Walker,C. Uzan-Saguy, and R. Kalish

Enhancement of Porosity and Surface Roughness of CuredPhenolic Resin by Ion Implantation O4.8

R.L. Zimmerman, D. Ila, C.C. Smith, A.L. Evelyn,D.B. Poker, and D.K. Hensley

POSTER SESSION

Secondary Ion Mass Spectrometry With Gas Cluster Ion Beams O5.1Noriaki Toyoda, Jiro Matsuo, Takaaki Aoki, Shunichi Chiba,Isao Yamada, David B. Fenner, and Richard Torti

Simulations and Argon-Cluster-Ion Smoothing of Surfaces O5.2D.B. Fenner, D.W. Dean, V. DiFilippo, L.P. Allen,J. Hautala, and P.B. Mirkarimi

Atomistic Simulations of the Ostwald Ripening of Si NanoparticlesIon Beam Synthesized in SiO2 O5.7

C. Bonafos, M. Carrada, B. Colombeau, A. Altibelli,G. Ben Assayag, B. Garrido, M. Lopez, A. Perez-Rodriguez,J.R. Morante, and A. Claverie

Properties of Gallium Disorder and Gold Implants in GaN O5.9W. Jiang, W.J. Weber, S. Thevuthasan,and V. Shutthanandan

Dynamical X-ray Diffraction Analysis of Solid Phase EpitaxyGrowth of Sii.yCy Heterostructures O5.10

J. Rodriguez-Viejo and Zakia el-Felk

Characterization of Thin Layers of Metal Clusters Embedded inSilica Glass Formed by High Dose Ion Implantation O5.ll

P.S. Chung, S.P. Wong, W.Y. Cheung, N. Ke, W.K. Lee,and C.W. Chan

Nanoparticles of Metallic Cobalt and Nickel Prepared by IonImplantation Into SiO2 O5.12

O. Cintora-Gonzalez, C. Estournes, D. Muller,M. Richard-Plouet, A. Traverse, J.L. Guille, and J.J. Grob

* Invited Paper

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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Modification of the Electronic Properties of a-Si!_xCx:H by Fe+ IonImplantation O5.13

T. Tsvetkova, S. Balabanov, B. Amov, Ch. Angelov, J. Zuk,D. Maczka, G.J. Adriaenssens, and K. Iakoubovskii

Gold Nanoclusters Formed by Ion-Implantation Into Bi2TeO5 O5.14A. Kling, M.F. da Silva, J.C. Soares, P.F.P. Fichtner,L. Amaral, F.C. Zawislak, I. Foldvari, and A. Peter

Post Implantation Treatment of Silicon Carbide-Based Sensors forHydrogen Detection Properties Enhancement O5.15

I.C. Muntele, C.I. Muntele, D. Ila, R.L. Zimmerman,D.B. Poker, and D.K. Hensley

Chemical Effects In Ion Implantation Induced Quantum WellIntermixing O5.16

Todd W. Simpson, Paul G. Piva, and Ian V. Mitchell

Modification of Carbon Related Films With Energy Beams O5.18Hiroshi Naramoto, Yonghua Xu, Kazumasa Narumi,Xiaodong Zhu, Jiri Vacik, Shunya Yamamoto,and Kiyoshi Miyashita

Synthesis of Continuous SmSi2 Layers on Si by Samarium IonImplantation Using a Metal Vapor Vacuum Arc Ion Source O5.29

X.Q. Cheng, H.N. Zhu, and B.X. Liu

ION BEAM INDUCED SLICINGAND FOCUSED ION BEAM

APPLICATIONS

* Optimization of the Ion-Cut Process in Si and SiC O6.1O.W. Holland, D.K. Thomas, and R.B. Gregory

Ion Beam Slicing of Single Crystal Oxide Thin Films O6.2S. Thevuthasan, V. Shutthanandan, W. Jiang,and W. J. Weber

Buried Oxide Precipitates in a Si Wafer Due to He IonImplantation and High-Temperature Oxidation O6.3

Sadao Nakashima, Jyoji Nakata, Junzou Hayashi,and Kazuo Imai

Co-Implantation and the Role of Implant Damage in the ThermalStability of Implanted Helium in Indium Phosphide O6.4

Todd W. Simpson and Ian V. Mitchell

*Invited Paper

vii

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Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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Cu Gettering in Si Cavities Observed by Positron AnnihilationDoppler Broadening O6.5

H. Schut, A. van Veen, and S.W.H. Eijt

Effects of Ga-Irradiation on Properties of Materials Processed bya Focused Ion Beam (FIB) O6.6

H.D. Wanzenboeck, H. Langfischer, A. Lugstein,E. Bertagnolli, U. Grabner, P. Pongratz, B. Basnar,J. Smoliner, and E. Gornik

MET AST ABLE PHASES, PLASTICFLOW, AND PATTERNING OF

SURFACES

Spontaneous Formation of Nanometer-Scale Self-OrganizedStructures in Ag-Cu Alloys Under Irradiation O7.1

Raul A. Enrique and Pascal Bellon

Spontaneous Crystalline Multilayer Formation in Ni Implanted Alat 100 K O7.2

Alexandre Cuenat, Aicha Hessler-Wyser, Max Dobeli,and Rolf Gotthardt

SURFACE MODIFICATION, SUCHAS HARDNESS AND TEXTURE

* Ion Beam Assisted Texture Evolution During Thin FilmDeposition of Metal Nitrides O9.1

Bernd Stritzker, Jurgen W. Gerlach, Stephan Six,and Bemd Rauschenbach

* Relating Nanostructures to Mechanical Properties inIon-Implanted Materials O9.3

David M. Follstaedt, James A. Knapp, Samuel M. Myers,and Gary A. Petersen

Ar Cluster Ion Bombardment Effects on Semiconductor Surfaces O9.4Toshio Seki, Kazumichi Tsumura, Takaaki Aoki,Jiro Matsuo, Gikan H. Takaoka, and Isao Yamada

Time-Resolved X-ray Scattering Study of Co Surface EvolutionDuring Low-Energy Ion Irradiation O9.5

O. Malis, J.M. Pomeroy, R.L. Headrick, and J.D. Brock

* Invited Paper

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Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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ION BEAM SYNTHESIS OFNANOSTRUCTURES AND

THIN LAYERS I

Synthesis of Spatially Controlled Nanostructures by IonImplantation in V-Grooves on (001) Si Surfaces O10.2

Torsten Mtiller, Karl-Heinz Heinig, Bernd Schmidt,Arndt Miicklich, and Wolfhard Moller

POSTER SESSION

Synthesis of B-C-N Thin Films by Ion-Beam-Assisted Depositionand Their Mechanical Properties O11.5

Akihito Matsumuro, Yoshimasa Kato, and Hidenobu Ohta

Deposition of Diamond-Like Carbon Films Using Plasma BasedIon Implantation With Bipolar Pulses O11.7

S. Miyagawa and Y. Miyagawa

Effect of Substrate Materials on Mechanical Propertiesand Microstructure of Carbon Nitride Films Prepared byIon-Beam-Assisted Deposition O11.8

Hidenobu Ohta, Akihito Matsumuro, and Yutaka Takahashi

Studies on Titanium Nitride Coatings—Effect of IonBombardment O11.9

K. Deenamma Vargheese and G. Mohan Rao

Mechanical Properties of AIN Thin Films Prepared by Ion BeamAssisted Deposition Oil.10

Shuichi Miyabe, Toshiyuki Okawa, Nobuaki Kitazawa,Yoshihisa Watanabe, and Yoshikazu Nakamura

Modeling for the Diamond-Like Carbon Film Synthesis by PlasmaBased Ion Implantation Ol 1.12

Yoshiko Miyagawa, Flyura Djurabekova, and Soji Miyagawa

Metal-Alloy Nanocluster Formation in Silica Glass by SequentialIon Implantation Oil.18

G. Battaglin, E. Cattaruzza, F. Gonella, F. D'Acapito,C. de Julian Fernandez, G. Mattel, C. Maurizio, P. Mazzoldi,and C. Sada

Effect of Iodine and Strontium Ion Implantation on theMicrostructure of Cubic Zirconia O11.19

Sha Zhu, Lumin Wang, Shixin Wang, and Rodney C. Ewing

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Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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Evolution of Ion Beam Synthesized Au Nanoclusters in SiO2

Under Ion Irradiation O11.20Bernd Schmidt, Karl-Heinz Heinig, and Arndt Miicklich

The Control of Gold Nanocluster Sizes in Dielectric Thin Films viaIon Beam Assisted Deposition O11.22

S. Schiestel, C.A. Carosella, G.K. Hubler, S.B. Qadri,D. Knies, and R.M. Stroud

Kinetics of Ion Beam Synthesis of Sn and Sb Clusters in SiO2

Layers O11.23Sabina Spiga, Sandro Ferrari, Marco Fanciulli,Bernd Schmidt, Karl-Heinz Heinig, Rainer Grotzschel,Arndt Miicklich, and Giuseppe Pavia

Lithium Nanocluster Formation in Li+ - Ion Implanted MgO O11.24A. van Veen, M.A. van Huis, A.V. Fedorov, H. Schut,C.V. Falub, S.W.H. Eijt, F. Labohm, B.J. Kooi,and J.Th.M. De Hosson

High-Fluence Implantation of Erbium Into Silicon-GermaniumAlloys: Structural and Thermal Properties O11.26

V. Touboltsev, J. Raisanen, E. Johnson, A. Johansen,and L. Sarholt

Growth and Characterization of Erbium Silicides Synthesized byMetal Vapor Vacuum Arc Ion Implantation O11.27

X.W. Zhang, W.Y. Cheung, and S.P. Wong

Influence of Carbon on Erbium Lattice Location in Si:Er O11.28X.T. Ren and M.B. Huang

Ion Beam Radiation Effects on In As Semiconductor Quantum Dots Oil.31J. Zhu, M. Thaik, M. Yakimov, S. Oktyabrsky,A.E. Kaloyeros, and M.B. Huang

Ion-Plating Deposition of MgO Protective Layer for AC-PlasmaDisplay Panels O11.33

Kazuo Uetani, Hiroshi Kajiyama, Akira Kato,Isao Tokomoto, Yasuhiro Koizumi, Koichi Nose,Yasushi Ihara, Ken-ichi Onisawa, and Tetsuroh Minemura

Effects of ArF Excimer Irradiation on Multi-Energy Ge and SeIon Implanted Silica O11.34

R.H. Magruder III, R.A. Weller, R.A. Weeks, J. Wehrmeyer,R.A. Zuhr, and D.K. Hensley

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Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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ION BEAM SYNTHESIS OFNANOSTRUCTURES AND

THIN LAYERS II

* Nanophase Composites Produced by Ion Implantation:Properties, Problems, and Potential O12.1/R7.1

A. Meldrum, L.A. Boatner, C.W. White,and R.F. Haglund, Jr.

Ion Beam Enhanced Formation and Luminescence of SiNanoclusters from fl-SiOx O12.3/R7.3

Yohan Sun, Se-Young Seo, Jung H. Shin, T.G. Kim,C.N. Whang, and J.H. Song

ION-SOLID INTERACTIONS FOROPTOELECTRONICS/PHOTONICS AND

MICROELECTRONIC MA TERIALS

Synthesis of III-Nx-Vlx Thin Films by N Ion Implantation O13.3/R8.3K.M. Yu, W. Walukiewicz, W. Shan, J. Wu, J.W. Beeman,J.W. Ager III, E.E. Haller, and M.C. Ridgway

Doping of GaN by Ion Implantation O13.4/R8.4Eduardo J. Alves, C. Liu, Maria F. da Silva, Jose C. Soares,Rosario Correia, and Teresa Monteiro

Correlation Between Structural and Optical Properties of SiNanocrystals in SiO2: Model for the Visible Light Emission O13.5/R8.5

M. Lopez, B. Garrido, O. Gonzalez, C. Garcia,A. Perez-Rodriguez, J.R. Morante, C. Bonafos, M. Carrada,R.J. Rodriguez, and J. Montserrat

SEMICONDUCTORS ANDELECTRONIC MA TERIALS

A Damage Model for Disordered Structures in Ion IrradiatedSilicon O14.1/R9.1

Ju-Yin Cheng and J. Murray Gibson

Determination of the Distribution of Ion Implantation Boron inSilicon O14.3/R9.3

Te-Sheng Wang, A.G. Cullis, E.J.H. Collart, A.J. Murrell,and M.A. Foad

•Invited Paper

xi

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Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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Crystallization of Isolated Amorphous Zones in SemiconductorMaterials O14.4/R9.4

Eric P. Hollar, Ian M. Robertson, and Igor Jencic

Investigation of Irradiation Damage in Silicon DioxidePolymorphs Using Cathodoluminescence Microanalysis O14.5/R9.5

Marion A. Stevens-Kalceff

* Inverse Ostwald Ripening and Self-Organization of NanoclustersDue to Ion Irradiation O14.6/R9.6

K.-H. Heinig, B. Schmidt, M. Strobel, and H. Bernas

Impact of Boron and Gallium on Defects Production in Silicon O14.7/R9.7Aurangzeb Khan, Nethaji Dharmarasu,Masafumi Yamaguchi, Kenji Araki, Tuong K. Vu,Tatsuo Saga, Takao Abe, Osamu Annzawa, M. Imaizumi,and Sumio Matsuda

Post Annealing Studies of C60 Ion Implanted Thin Films O14.8/R9.8Nethaji Dharmarasu, Kannan L. Narayanan, Nabuaki Kojima,Yoshio Ohshita, and Masafumi Yamaguchi

Unusual Change in Columnar Defect Morphology in YBCO UponAnnealing O14.9/R9.9

Y. Yan, M.A. Kirk, A. Petrean, and L. Paulius

Ion-Implantation Generated Nanovoids in Si and MgO Monitoredby High Resolution Positron Beam Analysis O14.ll/R9.ll

S.W.H. Eijt, C.V. Falub, A. van Veen, H. Schut,P.E. Mijnarends, M.A. van Huis, and A.V. Fedorov

Author Index

Subject Index

* Invited Paper

xn

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Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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PREFACE

Symposium O, "Ion Beam Synthesis and Processing of Advanced Materials," was heldNovember 27-29 at the 2000 MRS Fall Meeting in Boston, Massachusetts. 116 papers werepresented in fourteen sessions including two poster sessions. The sessions were well attendedand the discussions were lively.

The presentations during this three-day symposium emphasize the broad scientific andtechnological interest in ion-beam applications to synthesis and processing of advancedmaterials. A significant portion of the symposium addressed ion-beam processing andsynthesis at the nano-scale, including work on nanocrystals, quantum dots, quantum wells,nanotubes, and self-organized structures, as well as heterostructures and other thin films.Attendees heard discussions on defect kinetics, growth, ion erosion, surface smoothing,texturing and pattern formation, cluster-beam assisted processing, processing and synthesis formechanical properties, and ion slicing/smart cut processing. Materials ranged over metals,semiconductors, dielectrics, and organics. Materials modification from the nano-scale to themeso-scale to the macro-scale was discussed. Technological applications ranged over thin-filmtransistors, microelectronics, optical materials, high-temperature superconductors, sensors,diamond-like coatings, hard coatings, and magnetic recording media. Several papers discussedmodeling and analysis of these processes using techniques including molecular dynamicsimulations. Three joint sessions were held with Symposium R, "Microstructural Processes inIrradiated Materials."

Session chairs included: T. E. Haynes, D. M. Follstaedt, O. W. Holland, A. Meldrum,J. C. Soares, C. J. Buchal, I. M. Robertson, and W. J. Weber. The organizers gratefullyacknowledge their contributions.

Symposium support was provided by The Aerospace Corporation, Epion Corporation,Forschungszentrum Rossendorf, National Electrostatics Corporation, Oak Ridge NationalLaboratory, and Varian Associates. The symposium organizers, proceedings editor, and theMaterials Research Society gratefully acknowledge their support.

Steven C. MossKarl-Heinz HeinigDavid B. Poker

December, 2000

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Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 609 Amorphous and Heterogeneous Silicon Thin Films 2000, R.W. Collins, H.M. Branz,M. Stutzmann, S. Guha, H. Okamoto, 2001, ISBN: 1-55899-517-X

Volume 610 Si Front-End Processing Physics and Technology of Dopant-Defect Interactions II, A. Agarwal,L. Pelaz, H-H. Vuong, P. Packan, M. Kase, 2001, ISBN: 1-55899-518-8

Volume 611 Gate Stack and Silicide Issues in Silicon Processing, L.A. Clevenger, S.A. Campbell, P.R. Besser,S.B. Herner, J. Kittl, 2001, ISBN: 1-55899-519-6

Volume 612 Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics,G.S. Oehrlein, K. Maex, Y-C. Joo, S. Ogawa, J.T. Wetzel, 2001, ISBN: 1-55899-520-X

Volume 613 Chemical-Mechanical Polishing 2000 Fundamentals and Materials Issues, R.K. Singh, R. Bajaj,M. Moinpour, M. Meuris, 2001, ISBN: 1-55899-521-8

Volume 614 Magnetic Materials, Structures and Processing for Information Storage, B.J. Daniels, T.P. Nolan,M.A. Seigler, S.X. Wang, C.B. Murray, 2001, ISBN: 1-55899-522-6

Volume 615 Polycrystalline Metal and Magnetic Thin Films 2001, B.M. Clemens, L. Gignac, J.M. MacLaren,O. Thomas, 2001, ISBN: 1-55899-523-4

Volume 616 New Methods, Mechanisms and Models of Vapor Deposition, H.N.G. Wadley, G.H. Gilmer,W.G. Barker, 2000, ISBN: 1-55899-524-2

Volume 617 Laser-Solid Interactions for Materials Processing, D. Kumar, D.P. Norton, C.B. Lee, K. Ebihara,X.X. Xi, 2001, ISBN: 1-55899-525-0

Volume 618 Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films,J.M. Millunchick, A-L. Barabasi, N.A. Modine, E.D. Jones, 2000, ISBN: 1-55899-526-9

Volume 619 Recent Developments in Oxide and Metal Epitaxy Theory and Experiment, M. Yeadon,S. Chiang, R.F.C. Farrow, J.W. Evans, O. Auciello, 2000, ISBN: 1-55899-527-7

Volume 620 Morphology and Dynamics of Crystal Surfaces in Complex Molecular Systems, J. DeYoreo,W. Casey, A. Malkin, E. Vlieg, M. Ward, 2001, ISBN: 1-55899-528-5

Volume 621 Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, K.L. Jensen,RJ . Nemanich, P. Holloway, T. Trottier, W. Mackie, D. Temple, J. Itoh, 2001,ISBN: 1-55899-529-3

Volume 622 Wide-Bandgap Electronic Devices, R.J. Shul, F. Ren, W. Pletschen, M. Murakami, 2001,ISBN: 1-55899-530-7

Volume 623 Materials Science of Novel Oxide-Based Electronics, D.S. Ginley, J.D. Perkins, H. Kawazoe,D.M. Newns, A.B. Kozyrev, 2000, ISBN: 1-55899-531-5

Volume 624 Materials Development for Direct Write Technologies, D.B. Chrisey, D.R. Gamota, H. Helvajian,D.P. Taylor, 2001, ISBN: 1-55899-532-3

Volume 625 Solid Freeform and Additive Fabrication 2000, S.C. Danforth, D. Dimos, F.B. Prinz, 2000,ISBN: 1-55899-533-1

Volume 626 Thermoelectric Materials 2000 The Next Generation Materials for Small-Scale Refrigerationand Power Generation Applications, T.M. Tritt, G.S. Nolas, G.D. Mahan, D. Mandrus,M.G. Kanatzidis, 2001, ISBN: 1-55899-534-X

Volume 627 The Granular State, S. Sen, M.L. Hunt, 2001, ISBN: 1-55899-535-8Volume 628 Organic/Inorganic Hybrid Materials 2000, R. Laine, C. Sanchez, C.J. Brinker, E. Giannelis,

2001, ISBN: 1-55899-536-6Volume 629 Interfaces, Adhesion and Processing in Polymer Systems, S.H. Anastasiadis, A. Karim,

G.S. Ferguson, 2001, ISBN: 1-55899-537-4Volume 633 Nanotubes and Related Materials, A.M. Rao, 2001, ISBN: 1-55899-543-9Volume 634 Structure and Mechanical Properties of Nanophase Materials Theory and Computer Simulations

vs. Experiment, D. Farkas, H. Kung, M. Mayo, H. Van Swygenhoven, J. Weertman, 2001,ISBN: 1-55899-544-7

Volume 635 Anisotropic Nanoparticles Synthesis, Characterization and Applications, SJ. Stranick, P. Searson,L.A. Lyon, C D . Keating, 2001, ISBN: 1-55899-545-5

Volume 636 Nonlithographic and Lithographic Methods of Nanofabrication From Ultralarge-Scale Integrationto Photonics to Molecular Electronics, L. Merhari, J.A. Rogers, A. Karim, D.J. Norris, Y. Xia,2001, ISBN: 1-55899-546-3

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 637 Microphotonics Materials, Physics and Applications, K. Wada, P. Wiltzius, T.F. Krauss,K. Asakawa, E.L. Thomas, 2001, ISBN: 1-55899-547-1

Volume 638 Microcrystalline and Nanocrystalline Semiconductors 2000, P.M. Fauchet, J.M. Buriak,L.T. Canham, N. Koshida, B.E. White, Jr., 2001, ISBN: 1-55899-548-X

Volume 639 GaN and Related Alloys 2000, U. Mishra, M.S. Shur, CM. Wetzel, B. Gil, K. Kishino, 2001,ISBN: 1-55899-549-8

Volume 640 Silicon Carbide Materials, Processing and Devices, A.K. Agarwal, J.A. Cooper, Jr., E. Janzen,M. Skowronski, 2001, ISBN: 1-55899-550-1

Volume 642 Semiconductor Quantum Dots II, R. Leon, S. Fafard, D. Huffaker, R. N tzel, 2001,ISBN: 1-55899-552-8

Volume 643 Quasicyrstals Preparation, Properties and Applications, E. Belin-Ferr, P.A. Thiel, A-P. Tsai,K. Urban, 2001, ISBN: 1-55899-553-6

Volume 644 Supercooled Liquid, Bulk Glassy and Nanocrystalline States of Alloys, A. Inoue, A.R. Yavari,W.L. Johnson, R.H. Dauskardt, 2001, ISBN: 1-55899-554-4

Volume 646 High-Temperature Ordered Intermetallic Alloys IX, J.H. Schneibel, S. Hanada, K.J. Hemker,R.D. Noebe, G. Sauthoff, 2001, ISBN: 1-55899-556-0

Volume 647 Ion Beam Synthesis and Processing of Advanced Materials, D.B. Poker, S.C. Moss, K-H. Heinig,2001, ISBN: 1-55899-557-9

Volume 648 Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures,S.C. Moss, 2001, ISBN: 1-55899-558-7

Volume 649 Fundamentals of Nanoindentation and Nanotribology II, S.P. Baker, R.F. Cook, S.G. Corcoran,N.R. Moody, 2001, ISBN: 1-55899-559-5

Volume 650 Microstructural Processes in Irradiated Materials 2000, G.E. Lucas, L. Snead, M.A. Kirk, Jr.,R.G. Elliman, 2001, ISBN: 1-55899-560-9

Volume 651 Dynamics in Small Confining Systems V, J.M. Drake, J. Klafter, P. Levitz, R.M. Overney,M. Urbakh, 2001, ISBN: 1-55899-561-7

Volume 652 Influences of Interface and Dislocation Behavior on Microstructure Evolution, M. Aindow, M. Asta,M.V. Glazov, D.L. Medlin, A.D. Rollet, M. Zaiser, 2001, ISBN: 1-55899-562-5

Volume 653 Multiscale Modeling of Materials 2000, L.P. Kubin, J.L. Bassani, K. Cho, H. Gao,R.L.B. Selinger, 2001, ISBN: 1-55899-563-3

Volume 654 Structure-Property Relationships of Oxide Surfaces and Interfaces, C.B. Carter, X. Pan, K. Sickafus,H.L. Tuller, T. Wood, 2001, ISBN: 1-55899-564-1

Volume 655 Ferroelectric Thin Films IX, P.C. Mclntyre, S.R. Gilbert, M. Miyasaka, R.W. Schwartz,D. Wouters, 2001, ISBN: 1-55899-565-X

Volume 657 Materials Science of Microelectromechanical Systems (MEMS) Devices III, M. deBoer, M. Judy,H. Kahn, S.M. Spearing, 2001, ISBN: 1-55899-567-6

Volume 658 Solid-State Chemistry of Inorganic Materials III, M.J. Geselbracht, J.E. Greedan, D.C. Johnson,M.A. Subramanian, 2001, ISBN: 1-55899-568-4

Volume 659 High-Temperature Superconductors Crystal Chemistry, Processing and Properties,U. Balachandran, H.C. Freyhardt, T. Izumi, D.C. Larbalestier, 2001, ISBN: 1-55899-569-2

Volume 660 Organic Electronic and Photonic Materials and Devices, S.C. Moss, 2001, ISBN: 1-55899-570-6Volume 661 Filled and Nanocomposite Polymer Materials, A.I. Nakatani, R.P. Hjelm, M. Gerspacher,

R. Krishnamoorti, 2001, ISBN: 1-55899-571-4Volume 662 Biomaterials for Drug Delivery and Tissue Engineering, S. Mallapragada, R. Korsmeyer,

E. Mathiowitz, B. Narasimhan, M. Tracy, 2001, ISBN: 1-55899-572-2

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-41236-1 - Materials Research Society Symposium Proceedings: Volume 647:Ion Beam Synthesis and Processing of Advanced MaterialsEditors: Steven C. Moss, Karl-Heinz Heinig and David B. PokerFrontmatterMore information