introduction sample preparation (1,4-benzenedimethanethiol (bdmt) )
DESCRIPTION
Temperature Dependent Molecular Conduction measured by the Electrochemical Deposition of Platinum Electrode in Lateral Configuration (Applied Physics Letters, 2004 (in press)) B. Kim*, S. J. Ahn*, J. G. Park*, S. H. Lee*, E. E. B. Campbell**, Y. W. Park* - PowerPoint PPT PresentationTRANSCRIPT
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Temperature Dependent Molecular Conduction measured by the Electrochemical Deposition of Platinum E
lectrode in Lateral Configuration(Applied Physics Letters, 2004 (in press))
B. Kim*, S. J. Ahn*, J. G. Park*, S. H. Lee*, E. E. B. Campbell**, Y. W. Park*
* School of Physics, Seoul National University, Korea** Department of Experimental Physics, Gothenburg University and Chalmers
University of Technology, Sweden
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I. Introduction
II. Sample preparation
(1,4-benzenedimethanethiol (BDMT) )
III. Result and discussion: Temperature dependent molecular conduction (27K<T<300K) in lateral configuration
IV. Summary
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Polyacetylene single nanofiber(PANF) Polyacetylene single nanofiber(PANF)
SEM image
Synthetic Metals 119, 53 (2001)
AFM image
0.8 micron
Poster 24: Bio Kim et al.
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Scanning tunneling microscope
M. Dorogi, et al., Phys. Rev. B, 52, 9071 (1995)
S. Datta, et al., Phys. Rev. Lett. 79, 2530 (1997)
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Conducting atomic force microscope
X. D. Cui, et al., Science, 294, 571 (2001) D. J. Wold, et al., J. Am. Chem. Soc. 123, 5549 (2001)
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Mechanically controlled break junction
M. A. Reed, et al., Science, 278, 252 (1997)
J. Reichert, et al., Phys. Rev. Lett. 88, 176804 (2002)
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Electromigration break junction
H. Park, et al., Appl. Phys. Lett. 75, 301 (1999)
J. Park, et al., Nature 417, 722 (2002)
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Angle evaporation
J. O. Lee, et al., Nano Lett. 3, 113 (2003)
N. B. Zhitenev, et al., Phys. Rev. Lett. 88, 226801 (2002)
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Others
J. G. Kushmerick, et al., Nano Lett. 3, 897 (2003)
J. K. N. Mbindyo, et al., J. Am. Chem. Soc. 124, 4020 (2002)
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Molecular conduction measured by the electromigration technique
1. Electromigration
H. Park, et al., Nature 407, 57 (2000) 200 nm
2 ㎛
2. Electrode design
20 nm height of Au electrode without adhesion layer
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3. Breaking of Au line
4. AFM and SEM image of nano gap
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(2) reducing the separation of electrodes using electrochemical deposition of Pt
(1) SAM on top of Au electrode/nanoparticles
Our method: Molecular conduction measured by the electrochemical deposition
David L. Klein et al., APL 68, 2574 (1996)
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A
3. deposit Pt electrochemically
Pt
4. measure IV characteristics
A
this
1. grow self-assembled monolayers (SAMs)
SAMs
pin hole
2. compose circuit and drop solution
A
aqueous solution of 0.1 M of K2PtCl4 and 0.5 M of H2SO4
Our method: (1) + (2)
combination of electrochemical deposition and SAMSchematic diagram
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Electrochemical deposition process of Pt
R > 10 G
time
Optical microscope image confirms the deposition of Pt on one side.
After drying electrolyte
In situIn the electrolyte In the electrolyte
In the electrolyte
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100 nm
Pt
Pt
before depositionafter deposition
AFM & FESEM image
height ~ 700 nm
side view (conjecture)
Pt
SiO2
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Measurement results & discussion
openR > 10 G
shortR ~ 5 k
samplenon-Ohmic
At Room Temperature
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Temperature dependent I-V characteristics (160K<T<300K)
The I-V characteristics are non-Ohmic and asymmetric in all temperature range, and current decreases upon cooling (semiconductor- like temperature dependence) .
The asymmetriccharacteristics are originated by the difference of the two contacts: one Pt electrode is chemisorbed and the other Pt electrode is physisorbed.to the molecule.
sample 1
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Temperature dependent I-V characteristics (29K<T<120K)
There is no significant temperature dependence in the I- V characteristics below 40 K. This means that the tunneling conduction is dominant at T< 40K.
sample 1
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Tunneling at low temperature (T<40K)
Fowler-Nordheim tunneling: log(I /V2) -1/V∝
sample 1
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Temperature dependent I-V characteristics (100K<T<300K)sample 2
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Temperature dependent I-V characteristics (27K<T<100K)
I-V curves show very stable behavior below 0.85 V, but the current fluctuates for V> 0.85 V at 50 K < T < 60 K.
sample 2
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I-V characteristics – sample 2
No switching or NDR effect upon voltage sweep at T=27K
After sweeping the voltage, the current is increased ~5 times
At T=27K
At T=27K
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I-V characteristics (30K<T<100K)
And the RTS-like fluctuation at 50 K < T < 60 K is disappeared
sample 2
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Tunneling at low temperature (T<40K)
Fowler-Nordheim Tunneling: log(I /V2) -1/V∝
sample 2
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Model for the asymmetric I-V characteristics
HOMO
LUMO
Chemisorbed Pt
Physisorbed Pt
positive bias to ‘physisorbed Pt’
negative bias to ‘physisorbed Pt’
eV
eVContact between base Pt and SAM is much better (chemisorbed) than contact between electrochemically grown Pt and SAM (physisorbed).
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Summary
· Temperature dependent molecular conduction was measured by the electrochemical deposition of platinum electrode to the self-assembled monolayer of 1,4-benzenedimethanethiol (BDMT) in lateral configuration.
· I-V characteristics are non-Ohmic and asymmetric in all measured temperature range. (27 K < T < 300 K)
· For T>40K, the I-V characteristics are semiconductor-like.· For T40K, the I-V characteristics are temperature independent following the Fowler-Nordheim type Tunneling conduction. ( log (I /V2) -1/V )∝
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Acknowledgement:
This work was supported by the National Research Laboratory (NRL) program of the Ministry of Science and Technology (MOST), Korea.
Work done in Sweden was supported by the Sweden Strategic Research Fund (CARAMEL consortium) and STINT.
Partial support for Yung Woo Park was provided by the Royal Swedish Academy of Science.