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Research ArticleInfluence of Front and Back Contacts on PhotovoltaicPerformances of p-n Homojunction Si Solar Cell Considering anElectron-Blocking Layer

Md Feroz Ali1 and Md Faruk Hossain2

1Department of Electrical and Electronic Engineering (EEE) Pabna University of Science amp Technology (PUST)Pabna 6600 Bangladesh2Electrical amp Electronic Engineering Rajshahi University of Engineering amp Technology (RUET) Rajshahi 6204 Bangladesh

Correspondence should be addressed to Md Feroz Ali feroz071021gmailcom

Received 17 November 2016 Accepted 22 January 2017 Published 12 March 2017

Academic Editor Yatendra S Chaudhary

Copyright copy 2017 Md Feroz Ali and Md Faruk Hossain This is an open access article distributed under the Creative CommonsAttribution License which permits unrestricted use distribution and reproduction in any medium provided the original work isproperly cited

In this simultion work the effect of front and back contacts of p-n homojunction Si solar cell with an electron-blocking layer(EBL) has been studied with the help of a strong solar cell simulator named AMPS-1D (analysis of microelectronic andphotonic structures one dimensional) Without the effect of these contact parameters low solar cell efficiency has beenobserved Fluorine-doped tin oxide (FTO) with high work function (545 eV) has been used as the front contact to theproposed solar cell Zinc (Zn) metal which has a work function of 43 eV has been used as the back contact of theproposed model With FTO as the front contact and Zn as the back contact the optimum efficiency of 29275(Voc = 1363V Jsc = 23747mAcm2 FF = 0905) has been observed This type of simple Si-based p-n homojunction solarcell with EBL of high efficiency has been proposed in this paper

1 Introduction

Because of the increasing trend of price of fossil fuels andsome of their drastic and dangerous effects on greenhousethe world is now looking for green energy like solar cells[1] For its green power low cost and availability rene-wable energy plays an important role in the world energyespecially solar photovoltaic cell which has a great contri-bution to the worldrsquos electrical energy Solar energy [2] isanother increasingly hot topic in recent years due to theinevitable exhaustion of fossil and mineral energy sourcesin the next fifty years [3] Although solar cell has a greatdisadvantage of higher initial cost after payback it is stillthe best option for clean energy For example the calcu-lated energy payback for the current PV systems is 3-4years which depends on the type of PV panel (thin filmtechnology or multicrystalline silicon) but this time maybe expected to be reduced to 1-2 years as manufacturingtechniques improve [4] People all over the world have

investigated different types of silicon solar cells for manyyears [5] One of the main reasons that silicon is thechoice for semiconductor material in the field of micro-electronics is that it forms a unique oxide on the surfacewhen heated to high temperatures which facilitates devicefabrication for two reasons (i) it neutralizes defects onthe silicon surface and (ii) it allows for straightforwardplanar processing [6] The performance of solar photovol-taic cells depends on their design material propertiesand fabrication technology that is why researchers pres-ent improved cells over periods of time although theoverall process is not only quite complex but also expen-sive and time-consuming [7] One of the best methodsfor simulating solar cell is the numerical approach whichhelps the researchers to find out a design optimizationThere are many major objectives of numerical modelingand simulation in solar cell research such as testing thevalidity of the proposed physical structures and geometryon solar cell performance and fitting the modeling output

HindawiInternational Journal of PhotoenergyVolume 2017 Article ID 7415851 6 pageshttpsdoiorg10115520177415851

to experimental results which have become indispensabletools for designing a high-efficiency solar cell [7] The frontand back contacts have great influence on efficiency as wellas performance of silicon solar cell Ni back contact giveshigh performance compared with other metals [8] Theefficiency of solar cell also depends on the work function[9] of the front and back contacts The work functionΦ is the energy required to remove an electron from thehighest filled level in the stationary Fermi distribution ofa solid a point in a field-free zone just outside the solidat absolute zero The relatively high evaporation ratescan be achieved with low work function materials andmust be operated at lower temperatures [10] High-performance electrodes must exhibit a low work functionφ uniformly over the electrode surface The electronsource community has identified several promising mate-rials that can uniformly reduce φ through the use of sur-face adsorbents andor bandgap modification [10] Thetheoretical efficiency limits of solar energy conversion arestrongly dependent not only on the range but also on anumber of different bandgaps or effective bandgaps thatcan be incorporated into a solar cell [11]

In this work p-n homojunction Si solar cell with anelectron-blocking layer (EBL) [1] has been studied withthe variation of front and back contact parameters suchas the work function (eV) and reflection coefficient Forthe simulation of this device a strong solar cell simulatornamed AMPS-1D (analysis of microelectronic and pho-tonic structures one dimensional) has been used Otherparametersdata of the solar cell device have beenadopted from various practical references [12] Althoughsome have carried out this topic before [1] this studyis the first and unique one to consider the work functionand reflection coefficient of the front and back contactsto improve the efficiency of Si homojunction solar cellAuthors have been tried to simulate this solar cell andthe efficiency of 29275 has been observed at the thick-ness of 6000 nm for each p-layer Si and n-layer Si and50nm of EBL with 210 eV bandgap along with the workfunctions of the front and back contacts which are 15 eVand 05 eV respectively

2 Simulation Model

In AMPS software the physics of device transport can becaptured in three governing equations Poissonrsquos equationthe continuity equation for free holes and the continuityequation for free electrons [13] Determining transportcharacteristics then becomes a task of solving these threecoupled nonlinear differential equations subject to appro-priate boundary conditions These three equations andthe corresponding boundary conditions along with thenumerical solution technique used to solve them AMPSsoftware assumes that the material system under examina-tion is in steady state That is it is assumed that there isno time dependence It follows that the terminal characte-ristics generated by AMPS are the quasi-static characteris-tics Table 1 shows the boundary conditions of the frontand back contacts of AMPS PHIBO is the difference

between the work function of the front contact and elec-tron affinity of the semiconductor in contact SimilarlyPHIBL is the difference between the work function ofthe back contact and electron affinity of the semiconductorin contact

PHIBO is the difference between the work function of thefront contact and the electron affinity of the associated semi-conductor Similarly the PHIBL is the difference between thework function of the back contact and the electron affinity ofthe associated semiconductor Table 2 shows the surfacerecombination speed of AMPS Here for the simulationthe SNO SPO SNL and SPL were all selected as 1e7 cmsec

Table 3 shows the reflection coefficient for light imping-ing on the front and back surfaces In this case RF 01 andRB 09 have been selected for the simulation It means thatthe front contact of the device can reflect only 10 of theincident light and the back contact of the device can reflect90 of the incident light

3 The Proposed Model with Front and BackContact Parameters

Figure 1 shows the p-n homojunction solar cell with EBL andthe front and back contact parameters The spectral response(SR) has been observed with this model

In the proposed device p-n solar cell with p-type Si of6000 nm in thickness and also with n-type Si solar cell of6000 nm in thickness has been incorporated along with theproper front and back contacts in order to enhance efficiencyAs some researches have been carried out on this homojunc-tion Si solar cell this is the first research with AMPS toconsider the proper front and back contacts A 50nm thickelectron-blocking layer (EBL) has been embodied on thetop of the p-n diode where light is immersed It has beenobserved that the higher the thickness of p-n Si layer thehigher the efficiency But with p-n Si layer of 6000nm thick-ness the optimum efficiency is 29275 comparativelyhigher than conventional Si solar cell For this solar cellsimulation a PHIBO (work function of the front contact)of 16 eV and reflection coefficient of 01 and a PHIBL (workfunction of the back contact) of 05 eV and reflection coeffi-cient of 09 have been selected The simulation result showsthat the efficiency and performance of the solar cell deviceare optimum hence these are the best solar cell contactswith the corresponding parameters for this device

4 Simulation Parameters

The parameters included in Table 4 and Table 5 are used tosimulate the solar cell in AMPS-1D The temperature of300K is used as the default and to get the all results

Table 1 Boundary conditions of the front and back contacts ofAMPS

Contact parameters Description

PHIBO=Φbo (front contact) Ecminus Ef in at x= 0 (eV)

PHIBL=ΦbL (back contact) Ecminus Ef in at x= L (eV)

2 International Journal of Photoenergy

AM 15 illuminations are used AM means air mass coef-ficient The air mass coefficient is defined as the directoptical path length through the Earthrsquos atmosphereexpressed as the ratio relative to the path length verticallyupwards that is at the zenith [14]

5 Simulation Result and Discussion

Figure 2 shows the PHIBO versus efficiency plot of theproposed solar cellrsquos front contact We have tried tosimulate the front contact PHIBO from 12 eV to 22 eVIt has been observed that at 16 eV PHIBO theefficiency is 29275 Before the value of 16 eV whichhas a drastic effect on efficiency and beyond the valueof 16 eV the efficiency has a negligible increase That iswhy the PHIBO is 16 eV which is the optimum value ofthe proposed solar cell Figure 3 shows the PHIBOversus Voc plot of the proposed solar cellrsquos front contactIt has been observed that at PHIBO 16 eV the opencircuit voltage is 1363V and it is the optimum value asFigure 3 describes Figure 4 shows the PHIBO versus Jscplot of the proposed solar cellrsquos front contact The plotdescribes that the short circuit current of the solar cellincreases with the increase in PHIBO but the changesare quite small Figure 5 shows the PHIBO versus fillfactor plot of the proposed solar cellrsquos front contact Ithas been observed that the fill factor is optimum (0905)at PHIBO 16 eV

Figure 6 shows the PHIBL versus efficiency plot of theproposed solar cellrsquos back contact We have tried to vary thePHIBL from 01 eV to 08 eV It has been observed that theoptimum efficiency (29275) has been achieved at PHIBL05 eV After 05 eV the efficiency has been drasticallyaffected as shown in the plot Figure 7 shows the PHIBLversus Jsc plot of the proposed solar cellrsquos back contact Herethe short circuit current has no effect (almost the same ie23747mAcm2) on PHIBL as shown in the plot Figure 8shows the PHIBL versus fill factor (FF) plot of the proposedsolar cellrsquos back contact The optimum FF (0905) has beenobserved at PHIBL 05 eV FF has been decreasing sharplyafter PHIBL 05 eV which is depicted in Figure 8 Figure 9

shows the PHIBL versus Voc plot of the proposed solar cellrsquosback contact The optimum open circuit voltage (1363V)has been observed at PHIBL 05 eV as shown in the graph

Figure 10 shows the J-V and P-V plots of the proposedsolar cell Here the maximum power of 2928434mWcm2

has been observedFigure 11 shows the band diagram of the proposed solar

cell This figure shows the difference between the conductionand valence band as well as the difference between the Fermilabels of the proposed solar cellrsquos front and back contacts

6 Conclusion

To conclude for the front contact of the solar cell aPHIBO of 16 eV SNO and SPO of 10 times 107 cmsec andreflection coefficient (RF) of 01 (10) have been observedas the optimum values which correspond to FTO withhigh work function (545 eV) Also for the back contactof the solar cell a PHIBL of 06 eV SNL and SPL of10 times 107 cmsec and reflection coefficient (RB) of 09(90) have been observed as the optimum values whichcorrespond to metal Zn (43 eV) With these front andback contact parameters the solar cell has the followingperformance parameters Voc 1363V Jsc 23747mAcm2FF 0905 efficiency 29275 and maximum power2928434mWcm2 By controlling the bandgap and bandstate parameters the efficiency can also be improvedSo this kind of p-n homojunction Si solar cell with thefollowing proposed front contact (FTO) and back contact(Zn) can be fabricated in the laboratory and can becompared with the simulation result in the future

Table 2 Surface recombination speed of AMPS


SNO (recombination speed of the electron of the front contact) Electrons at x= 0 interface (cmsec)

SPO (recombination speed of the hole of the front contact) Hole at x= 0 interface (cmsec)

SNL (recombination speed of the electron of the back contact) Electrons at x= L interface (cmsec)

SPL (recombination speed of the hole of the front contact) Hole at x= L interface (cmsec)

Table 3 Reflection coefficient for light impinging on the front andback surfaces


RF Reflection coefficient at x= 0 (front surface)

RB Reflection coefficient at x= L (back surface)

Light

p-Si (6000 nm)

n-Si (6000 nm)

EBL (50 nm)

Zn

FTO

Figure 1 The proposed schematic diagram of p-n homojunctionsolar cell with EBL

3International Journal of Photoenergy

Table 4 Different layers of electronic properties used in the APMS simulation

Electronic properties EBL p-Si n-Si

Relative permittivity ɛr 119 119 119

Electron mobility μn (cm2v-s) 400 200 200

Hole mobility μp (cm2v-s) 40 20 20

Acceptor amp donor concentration (cmminus3) NA = 10times 1018 NA = 10times 1018 ND = 10times 1018

Bandgap (eV) 210 182 182

Effective density of states in the conduction band (cmminus3) 25times 1020 25times 1020 25times 1020

Effective density of states in the valence band (cmminus3) 25times 1020 25times 1020 25times 1020

Electron affinity (eV) 385 380 380

Table 5 Optimum values of the front and back contact parameters

Front contact Back contact

PHIBO= 160 eV PHIBL= 050 eV

SNO=10times 107 cmsec SNL= 10times 107 cmsec

SPO= 10times 107 cmsec SPL = 10times 107 cmsec

RF = 010 RB= 090

10 12 14 16 18 20 22 24 2620

22

24

26

28

30

32

PHIBO (eV)

Eci

ency

()

Figure 2 PHIBO versus efficiency plot of the proposed solar cellrsquosfront contact

10 12 14 16 18 20 22 24 2610

11

12

13

14

15

PHIBO (eV)

Voc

(V)

Figure 3 PHIBO versus Voc plot of the proposed solar cellrsquos frontcontact

10 12 14 16 18 20 22 24 26236

237

238

239

240

241

PHIBO (eV)

Jsc (

mA

cm

2 )

Figure 4 PHIBO versus Jsc plot of the proposed solar cellrsquos frontcontact

10 12 14 16 18 20 22 24 26082083084085086087088089090091092093

PHIBO (eV)

Fill

fact

or

Figure 5 PHIBO versus fill factor plot of the proposed solar cellrsquosfront contact


00 02 04 06 0823

24

25

26

27

28

29

30

31

PHIBL (eV)

Eci

ency

()

Figure 6 PHIBL versus efficiency plot of the proposed solar cellrsquosback contact

00 02 04 06 08 10230

232

234

236

238

240

242

244

246

PHIBL (eV)

Jsc (

mA

cm

2 )

Figure 7 PHIBL versus Jsc plot of the proposed solar cellrsquos backcontact

00 02 04 06 08 100885

0888

0891

0894

0897

0900

0903

0906

0909

PHIBL (eV)

Fill

fact

or

Figure 8 PHIBL versus fill factor plot of the proposed solar cellrsquosback contact

00 02 04 06 08 10110

115

120

125

130

135

140

145

150

PHIBL (eV)

Voc

(V)

Figure 9 PHIBL versus Voc plot of the proposed solar cellrsquos backcontact

00 02 04 06 08 10 12 14 160

5

10

15

20

25

30

Voltage (V)

퐽(m

Ac

m2 )

Jsc

Voc

0

5

10

15

20

25

30

35

40

45

Pow

er (m

Wc

m2 )

Figure 10 J-V and P-V plots of the proposed solar cell

0 1 2 3 4 5 6 7 8 9 10 11 12 13Thickness (휇m)

minus200퐸+00minus300퐸+00minus400퐸+00minus500퐸+00minus600퐸+00

Band

gap

(eV

)

Conduction bandFermi energyValence band

Figure 11 Band diagram of the proposed solar cell


Conflicts of Interest

The authors declare that they have no conflicts of interest

Acknowledgments

The authors would like to thank the Pennsylvania StateUniversity USA for providing them the analysis ofmicroelectronic and photonic structures one-dimensional(AMPS-1D) device simulation package

References

[1] M F Ali and M F Hossain ldquoEffect of bandgap of EBL onefficiency of the p-n homojunction Si solar cell from numericalanalysisrdquo International Conference on Electrical amp ElectronicEngineering (ICEEE) IEEE Explored pp 245ndash248 2015httpieeexploreieeeorgdocument7428268

[2] M F Ali and M F Hossain ldquoSimulation and observationof efficiency of p-n homojunction Si solar cell with defectsand EBL by using AMPS-1Drdquo International Journal ofEngineering and Applied Sciences (IJEAS) vol 2 no 12pp 137ndash140 2015

[3] M F Ali R Islam N Afrin M Firoj Ali S C Motonta andM F Hossain ldquoA new technique to produce electricity usingsolar cell in aspect of Bangladesh dye-sensitized solar cell(DSSC) and itrsquos prospectrdquo American Journal of EngineeringResearch vol 3 pp 35ndash40 2014

[4] J A Turner ldquoA realizable renewable energy futurerdquo Sciencevol 285 no 5428 pp 687ndash689 1999

[5] M F Ali and M F Hossain ldquoImproving efficiency of anamorphous silicon (pa-SiC Hia-Si Hna-Si H) solar cell byaffecting bandgap and thickness from numerical analysisrdquoInternational Journal of Engineering and Applied Sciences(IJEAS) vol 2 no 12 2015

[6] May 2016 httpbercberkeleyeduwhy-are-solar-cells-made-of-silicon_1

[7] M I Kabir S A Shahahmadi V Lim S Zaidi K Sopian andN Amin ldquoAmorphous silicon single-junction thin-film solarcell exceeding 10 efficiency by design optimizationrdquo Interna-tional Journal of Photoenergy vol 2012 Article ID 460919p 7 2012

[8] F T Zohora M A M Bhuiyan and S Saimoom ldquoSimula-tion and optimization of high performance CIGS solarcellsrdquo International Conference on Mechanical Engineeringand Renewable Energy 2015

[9] D Rached and R Mostefaoui ldquoInfluence of the frontcontact barrier height on the indium tin oxidehydrogenatedp-doped amorphous silicon heterojunction solar cellsrdquo ThinSolid Films vol 516 no 15 pp 5087ndash5092 2008

[10] K Robert C C Battaile A C Marshall D B King and D RJennison Low Work Function Material Development for theMicrominiature Thermionic Converter Sandia National Labo-ratories 2004 httpprodsandiagovtechlibaccess-controlcgi2004040555pdf

[11] MAHossain JMondalM FerozAli andMAAHumayunldquoDesign of high efficient InN quantum dot based solar cellrdquoInternational Journal of Scientific Engineering and Technologyvol 3 no 4 pp 346ndash349 2014

[12] J Arch S V FonAsh J Cuiffi et al A Manual for AMPS-1Dfor Windows 95NT A One-Dimensional Device Simulation

Program for the Analysis of Microelectronic and PhotonicStructures and Pennsylvania State University 1997 USA

[13] S Banik and M S K Shekh Design and Simulation of Ultra-Thin CdS-CdTe Thin-Film Solar Cell East West University2014 httpdspaceewubdedubitstreamhandle1234567891308Sowrabh_Banikpdfsequence=1

[14] May 2016 httpsenwikipediaorgwikiAir_mass_28solar_energy29


Submit your manuscripts athttpswwwhindawicom

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Inorganic ChemistryInternational Journal of

Hindawi Publishing Corporation httpwwwhindawicom Volume 2014

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Carbohydrate Chemistry

International Journal of


Journal of

Chemistry


Advances in

Physical Chemistry

Hindawi Publishing Corporationhttpwwwhindawicom

Analytical Methods in Chemistry

Journal of

Volume 2014

Bioinorganic Chemistry and ApplicationsHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

SpectroscopyInternational Journal of


The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Medicinal ChemistryInternational Journal of


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Applied ChemistryJournal of



Theoretical ChemistryJournal of


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Spectroscopy

Analytical ChemistryInternational Journal of


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Quantum Chemistry


Organic Chemistry International

ElectrochemistryInternational Journal of



CatalystsJournal of

to experimental results which have become indispensabletools for designing a high-efficiency solar cell [7] The frontand back contacts have great influence on efficiency as wellas performance of silicon solar cell Ni back contact giveshigh performance compared with other metals [8] Theefficiency of solar cell also depends on the work function[9] of the front and back contacts The work functionΦ is the energy required to remove an electron from thehighest filled level in the stationary Fermi distribution ofa solid a point in a field-free zone just outside the solidat absolute zero The relatively high evaporation ratescan be achieved with low work function materials andmust be operated at lower temperatures [10] High-performance electrodes must exhibit a low work functionφ uniformly over the electrode surface The electronsource community has identified several promising mate-rials that can uniformly reduce φ through the use of sur-face adsorbents andor bandgap modification [10] Thetheoretical efficiency limits of solar energy conversion arestrongly dependent not only on the range but also on anumber of different bandgaps or effective bandgaps thatcan be incorporated into a solar cell [11]

In this work p-n homojunction Si solar cell with anelectron-blocking layer (EBL) [1] has been studied withthe variation of front and back contact parameters suchas the work function (eV) and reflection coefficient Forthe simulation of this device a strong solar cell simulatornamed AMPS-1D (analysis of microelectronic and pho-tonic structures one dimensional) has been used Otherparametersdata of the solar cell device have beenadopted from various practical references [12] Althoughsome have carried out this topic before [1] this studyis the first and unique one to consider the work functionand reflection coefficient of the front and back contactsto improve the efficiency of Si homojunction solar cellAuthors have been tried to simulate this solar cell andthe efficiency of 29275 has been observed at the thick-ness of 6000 nm for each p-layer Si and n-layer Si and50nm of EBL with 210 eV bandgap along with the workfunctions of the front and back contacts which are 15 eVand 05 eV respectively

2 Simulation Model

In AMPS software the physics of device transport can becaptured in three governing equations Poissonrsquos equationthe continuity equation for free holes and the continuityequation for free electrons [13] Determining transportcharacteristics then becomes a task of solving these threecoupled nonlinear differential equations subject to appro-priate boundary conditions These three equations andthe corresponding boundary conditions along with thenumerical solution technique used to solve them AMPSsoftware assumes that the material system under examina-tion is in steady state That is it is assumed that there isno time dependence It follows that the terminal characte-ristics generated by AMPS are the quasi-static characteris-tics Table 1 shows the boundary conditions of the frontand back contacts of AMPS PHIBO is the difference

between the work function of the front contact and elec-tron affinity of the semiconductor in contact SimilarlyPHIBL is the difference between the work function ofthe back contact and electron affinity of the semiconductorin contact

PHIBO is the difference between the work function of thefront contact and the electron affinity of the associated semi-conductor Similarly the PHIBL is the difference between thework function of the back contact and the electron affinity ofthe associated semiconductor Table 2 shows the surfacerecombination speed of AMPS Here for the simulationthe SNO SPO SNL and SPL were all selected as 1e7 cmsec

Table 3 shows the reflection coefficient for light imping-ing on the front and back surfaces In this case RF 01 andRB 09 have been selected for the simulation It means thatthe front contact of the device can reflect only 10 of theincident light and the back contact of the device can reflect90 of the incident light

3 The Proposed Model with Front and BackContact Parameters

Figure 1 shows the p-n homojunction solar cell with EBL andthe front and back contact parameters The spectral response(SR) has been observed with this model

In the proposed device p-n solar cell with p-type Si of6000 nm in thickness and also with n-type Si solar cell of6000 nm in thickness has been incorporated along with theproper front and back contacts in order to enhance efficiencyAs some researches have been carried out on this homojunc-tion Si solar cell this is the first research with AMPS toconsider the proper front and back contacts A 50nm thickelectron-blocking layer (EBL) has been embodied on thetop of the p-n diode where light is immersed It has beenobserved that the higher the thickness of p-n Si layer thehigher the efficiency But with p-n Si layer of 6000nm thick-ness the optimum efficiency is 29275 comparativelyhigher than conventional Si solar cell For this solar cellsimulation a PHIBO (work function of the front contact)of 16 eV and reflection coefficient of 01 and a PHIBL (workfunction of the back contact) of 05 eV and reflection coeffi-cient of 09 have been selected The simulation result showsthat the efficiency and performance of the solar cell deviceare optimum hence these are the best solar cell contactswith the corresponding parameters for this device

4 Simulation Parameters

The parameters included in Table 4 and Table 5 are used tosimulate the solar cell in AMPS-1D The temperature of300K is used as the default and to get the all results

Table 1 Boundary conditions of the front and back contacts ofAMPS


PHIBO=Φbo (front contact) Ecminus Ef in at x= 0 (eV)

PHIBL=ΦbL (back contact) Ecminus Ef in at x= L (eV)










6 Conclusion












Light

p-Si (6000 nm)

n-Si (6000 nm)

EBL (50 nm)

Zn

FTO









Bandgap (eV) 210 182 182









RF = 010 RB= 090

10 12 14 16 18 20 22 24 2620

22

24

26

28

30

32

PHIBO (eV)

Eci

ency

()


10 12 14 16 18 20 22 24 2610

11

12

13

14

15

PHIBO (eV)

Voc

(V)


10 12 14 16 18 20 22 24 26236

237

238

239

240

241

PHIBO (eV)

Jsc (

mA

cm

2 )


10 12 14 16 18 20 22 24 26082083084085086087088089090091092093

PHIBO (eV)

Fill

fact

or



00 02 04 06 0823

24

25

26

27

28

29

30

31

PHIBL (eV)

Eci

ency

()


00 02 04 06 08 10230

232

234

236

238

240

242

244

246

PHIBL (eV)

Jsc (

mA

cm

2 )


00 02 04 06 08 100885

0888

0891

0894

0897

0900

0903

0906

0909

PHIBL (eV)

Fill

fact

or


00 02 04 06 08 10110

115

120

125

130

135

140

145

150

PHIBL (eV)

Voc

(V)


00 02 04 06 08 10 12 14 160

5

10

15

20

25

30

Voltage (V)

퐽(m

Ac

m2 )

Jsc

Voc

0

5

10

15

20

25

30

35

40

45

Pow

er (m

Wc

m2 )


0 1 2 3 4 5 6 7 8 9 10 11 12 13Thickness (휇m)


Band

gap

(eV

)






Acknowledgments


References


























Journal of

Chemistry


Advances in

Physical Chemistry



Journal of

Volume 2014














Journal of

Spectroscopy



Journal of


Quantum Chemistry






CatalystsJournal of









6 Conclusion












Light

p-Si (6000 nm)

n-Si (6000 nm)

EBL (50 nm)

Zn

FTO









Bandgap (eV) 210 182 182









RF = 010 RB= 090

10 12 14 16 18 20 22 24 2620

22

24

26

28

30

32

PHIBO (eV)

Eci

ency

()


10 12 14 16 18 20 22 24 2610

11

12

13

14

15

PHIBO (eV)

Voc

(V)


10 12 14 16 18 20 22 24 26236

237

238

239

240

241

PHIBO (eV)

Jsc (

mA

cm

2 )


10 12 14 16 18 20 22 24 26082083084085086087088089090091092093

PHIBO (eV)

Fill

fact

or



00 02 04 06 0823

24

25

26

27

28

29

30

31

PHIBL (eV)

Eci

ency

()


00 02 04 06 08 10230

232

234

236

238

240

242

244

246

PHIBL (eV)

Jsc (

mA

cm

2 )


00 02 04 06 08 100885

0888

0891

0894

0897

0900

0903

0906

0909

PHIBL (eV)

Fill

fact

or


00 02 04 06 08 10110

115

120

125

130

135

140

145

150

PHIBL (eV)

Voc

(V)


00 02 04 06 08 10 12 14 160

5

10

15

20

25

30

Voltage (V)

퐽(m

Ac

m2 )

Jsc

Voc

0

5

10

15

20

25

30

35

40

45

Pow

er (m

Wc

m2 )


0 1 2 3 4 5 6 7 8 9 10 11 12 13Thickness (휇m)


Band

gap

(eV

)






Acknowledgments


References


























Journal of

Chemistry


Advances in

Physical Chemistry



Journal of

Volume 2014














Journal of

Spectroscopy



Journal of


Quantum Chemistry






CatalystsJournal of







Bandgap (eV) 210 182 182









RF = 010 RB= 090

10 12 14 16 18 20 22 24 2620

22

24

26

28

30

32

PHIBO (eV)

Eci

ency

()


10 12 14 16 18 20 22 24 2610

11

12

13

14

15

PHIBO (eV)

Voc

(V)


10 12 14 16 18 20 22 24 26236

237

238

239

240

241

PHIBO (eV)

Jsc (

mA

cm

2 )


10 12 14 16 18 20 22 24 26082083084085086087088089090091092093

PHIBO (eV)

Fill

fact

or



00 02 04 06 0823

24

25

26

27

28

29

30

31

PHIBL (eV)

Eci

ency

()


00 02 04 06 08 10230

232

234

236

238

240

242

244

246

PHIBL (eV)

Jsc (

mA

cm

2 )


00 02 04 06 08 100885

0888

0891

0894

0897

0900

0903

0906

0909

PHIBL (eV)

Fill

fact

or


00 02 04 06 08 10110

115

120

125

130

135

140

145

150

PHIBL (eV)

Voc

(V)


00 02 04 06 08 10 12 14 160

5

10

15

20

25

30

Voltage (V)

퐽(m

Ac

m2 )

Jsc

Voc

0

5

10

15

20

25

30

35

40

45

Pow

er (m

Wc

m2 )


0 1 2 3 4 5 6 7 8 9 10 11 12 13Thickness (휇m)


Band

gap

(eV

)






Acknowledgments


References


























Journal of

Chemistry


Advances in

Physical Chemistry



Journal of

Volume 2014














Journal of

Spectroscopy



Journal of


Quantum Chemistry






CatalystsJournal of

00 02 04 06 0823

24

25

26

27

28

29

30

31

PHIBL (eV)

Eci

ency

()


00 02 04 06 08 10230

232

234

236

238

240

242

244

246

PHIBL (eV)

Jsc (

mA

cm

2 )


00 02 04 06 08 100885

0888

0891

0894

0897

0900

0903

0906

0909

PHIBL (eV)

Fill

fact

or


00 02 04 06 08 10110

115

120

125

130

135

140

145

150

PHIBL (eV)

Voc

(V)


00 02 04 06 08 10 12 14 160

5

10

15

20

25

30

Voltage (V)

퐽(m

Ac

m2 )

Jsc

Voc

0

5

10

15

20

25

30

35

40

45

Pow

er (m

Wc

m2 )


0 1 2 3 4 5 6 7 8 9 10 11 12 13Thickness (휇m)


Band

gap

(eV

)






Acknowledgments


References


























Journal of

Chemistry


Advances in

Physical Chemistry



Journal of

Volume 2014














Journal of

Spectroscopy



Journal of


Quantum Chemistry






CatalystsJournal of



Acknowledgments


References


























Journal of

Chemistry


Advances in

Physical Chemistry



Journal of

Volume 2014














Journal of

Spectroscopy



Journal of


Quantum Chemistry






CatalystsJournal of










Journal of

Chemistry


Advances in

Physical Chemistry



Journal of

Volume 2014














Journal of

Spectroscopy



Journal of


Quantum Chemistry






CatalystsJournal of

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