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SEMATECH Confidential
Accelerating the next technology revolution
Copyright ©2010
SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. International SEMATECH Manufacturing Initiative, ISMI, Advanced Materials Research Center
and AMRC are servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.
iEUVi Mask TWG Update
February 28, 2013, San Jose, CA
Long He
SEMATECH Confidential
TWG Membership Chair: Long He (US) SEMATECH / Intel
Co-chairs:
Markus Bender (EU) AMTC
Kazuya Ota (JP) Nikon
John Zimmerman, (US) ASML
Pawitter Mangat (US) GF
Membership:
Asia: AGC, Hoya, Canon, Nikon, NuFlare, DNP, Toppan, Samsung, TSMC, UMC, Gudeng, Danichi, Lasertec, Rorze, Toshiba, Shin-Etsu, EIDEC
EU: ASML, AMTC, TNO, Zeiss, HAMATEC, DMS, IMEC
US: KLA-Tencor, Corning, Entegris, GLOBALFUNDRIES, IBM, Intel, CNSC, EUVL, Lam Research, Applied Materials, Plasma-Therm, SEMATECH
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Mask TWG: Mission & Objective
• Mission:
Ensure EUV mask infrastructure readiness for High Volume Manufacturing (HVM) 2013 - 2016
• Objectives:
– Identify required standards
– Identify potential gaps between industry’s current efforts and projected needs for HVM
– Highlight gaps to member organizations and IEUVI Board for action
– Coordinate industry-wide EUV mask conversion
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Mask TWG Participation Trend 2009 - 2013
4
Regional representation
of companies Attendance and company representation
Asia-Pacific: 17EU: 7US: 12
• 57 attended the Sunday TWG, representing over 20
companies
0
10
20
30
40
50
60
70
80
Attendees
Companies
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Mask TWG Focuses (2/24/13)
5
• EUV Pellicle – Technical discussions
– Brainstorm infrastructure needs
• Technical Updates / Discussions – Defect printability
– HVM mask cleaning
– High NA mask blank requirement
– SMT SHARP and NDC updates
• Blank Defect Mitigation – Fiducial development progress
– Potential gaps for HVM implementation
• ITRS / Standards – 2013 ITRS revision
– Standards updates
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1:00 PM 1:15 PM Introduction Long He (SMT/INTC) 1
1. EUV Pellicle
1:15 PM 1:40 PM EUV Pellicle technical discussion Hye-Keun Oh (Hanyang Univ) 2
1:40 PM 2:05 PM EUV Pellicle technical discussion Shoji Akiyama (Shin-Etsu) 3
2:05 PM 2:20 PM Discussions:
Qual / requal of pellicled-mask -
Inspection method, membrane type, pellicle type / mounting
Built-in pellicle (in-tool)
Required infrastructure changes
All 4
2. Technical Updates / Discussions
2:20 PM 2:40 PM SEMATECH defect printability studies Mason Jang (SMT/SAMSUNG) 5
2:40 PM 2:55 PM Remaining challenges of EUV mask cleaning for HVM Uwe Dietze (SUSS) 6
----- Break ------
3:10 PM 3:25 PM High NA EUV mask blank simulation studies Patrick Kearney (SMT) 7
3:25 PM 3:35 PM SEMATECH High-NA Actinic Reticle Review Project (SHARP) update Iacopo Mochi / Kenneth Goldberg
(LBNL) 8
3:35 PM 3:45 PM SEMATECH Nano Defect Center porgram update Vibhu Jindal (SMT) 9
3. Blank Defect Mitigation
3:45 PM 3:55 PM Fiducial development update Tsutomu Shoki (Hoya) 10
3:55 PM 4:05 PM Fiducial development update Yoshiaki Ikuta (AGC) 11
4:05 PM 4:15 PM e-beam algorism and implementation update Shusuke Yoshitake (Nuflare) 12
4:15 PM 4:30 PM Defectivity mitigation process flow and potential gaps Markus Bender (AMTC) 13
4. Mask ITRS Review and Standards Updates
4:30 PM 4:40 PM Mask ITRS Review Frank Goodwin (SMT) 14
4:40 PM 4:45 PM P37 standard voting results John Zimmerman (ASML) 15
4:45 PM 4:50 PM E152 status update Long He / Handling TF 16
4:50 PM 4:55 PM P48 fiducial mark specification update Long He / Fiducial TF 17
4:55 PM 5:00 PM Conclusion / adjourn Long He 18
IEUVI Mask TWG Agenda. February 24, 2013
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EUV Pellicle
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Shin-Etsu Pellicle Progress
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Shin-Etsu Pellicle Progress
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Hanyang University Pellicle Study
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Hanyang University Pellicle Study
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Hanyang University Pellicle Study
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Discussions of Pellicle Implementation Enabling
• Pell’d mask (re-)qualification
? Pellicle and mounting requirements for mask inspect-ability
? Inspection method / tool
? In-tool pellicle (for all masks when placed on stage)
• Pellicle required mask infrastructure changes
? Carrier change
? Others
Conclusion: No action items captured during the meeting since in early phase. But,
there were more recommendations for action than for wait-and-see.
Off-line follow-ups needed.
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Technical Topic Discussions
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Current Multilayer Design Supports NA Only Upto 0.33
For M=4
ap
od
iza
tio
n
Current ML design can’t
support NA above ~0.33, at
M=4.
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A Preliminary Look at General Periodic And Aperiodic Mask Multilayers
• Simulate for three simple ML
modifications
– General periodic-vary N, dSi,dMo
– Chirped-Linear dSi and dMo ramp
– Bistacks-Vary periods and N for
upper coating
• These simple modifications can
improve apodization over current
multilayer if we trade off
reflectivity.
• What apodization can we
tolerate?
Periodic
Chirped
Bistack
M=4
Without changing magnification
(4x) and the chief ray angle (6°),
maximum NA is limited to ~0.42,
just from the light cones.
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Roadmap
• Out to NA~0.42
– (0.4*13.5/0.42=13nm)
– Tweak ML design
– Design ML/absorber for illumination.
– Keep M=4 and 6” mask.
• NA=0.42-0.7
– (0.4*13.5/0.7=8nm)
– Increase magnification (~8×).
– Increase mask size (~300mm)
• Beyond that:
– BEUV (6.x nm)
– or EUVDP
SEMATECH Confidential 18
Key Decisions Required
• What mask magnification to use? – 8× should get us to NA=0.7.
– Should we ramp M from 4 to 8 or just jump to 8?
• What mask size / format to use?
– Can we live with a smaller wafer field?
– When to change mask size?
– Ramp mask size or just jump to largest mask?
• Do we bother increasing the chief ray angle?
– CRA=6->NA=0.42, CRA=7->NA=0.48.
• How do we limit the number of mask
multilayer/absorber designs the mask suppliers must
support? – Standardize?
– Increase magnification sooner?
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Un
-op
tim
ized
SH
AR
P I
mag
es
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SMT Printability Update: Experimental
① Substrate Insp.& marking
② AFM analysis
⑥Absorber patterning
⑦ Wafer Exposure
③ ML deposition ④ AFM analysis
⑤ Absorber deposition
⑧ Analysis
*Images courtesy of www.tel.com, www.veeco.com
SEMATECH Confidential 22
An Example: CD Error vs. Defect Size
Simul. image
Wafer image
Position : X=0
NA=0.25, sigma=0.8
0 100 200 300 400 500 6000
50
100
150
200
250
300
350
X Mask Distance (nm)
Z M
ask H
eig
ht
(nm
)
EUV Mask Geometry Cutline Through Center of DefectBump
Illumination Defocus
Focus = 0nm
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Nano-defects: Need Integrated Approach
Sub 10 nm
Defects
Detection
Characterize
Source Removal
Repair
Prevention
Shape
Composition
size
Shape
Composition
size
Formation
Release
mechanisms
Transport
Adhesion
Lift off
Transport
Removal
Pattern modification
Remove
source
Prevent
deposition
Surface
contribution
Surface
contribution
Light-Matter interactions
e/ion beam-Matter interactions
Surface roughness/flatness
(power Spectral density)
Surface Topography
SEM/EDS/FIB
TOFSIMS
AFM
Auger (AES)
XPS
FTIR
TEM
EUVR
XRR
TXRF
Raman
XRD
Condensation
Contact mechanics
Crack formation
Stress
Temperature
Fluid dynamics Colloidal science
Interface science
Sound-Matter interactions
Light-Matter interactions
e/ion beam-Matter
interactions
Nano manipulation
fs lasers
Light-Matter interactions
Fluid dynamics
Tool modifications
Technology development
Procedures/guidelines
Material modifications
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SMT NDC Drives For Nano-Defects
Solution
Collaborate Provide a common facility for the required
critical expensive infrastructure
Work Proactively Break the problem down and solve
component and material problems before
integration
Drive Solutions Based on fundamental science of the
defect problem
Defect inspection
Silicon
20nm
Component level
accelerated life test
Understand the physics, model the
problem, and make a solution
-0.1
0.0
0.1
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0.3
0.4
0.5
0.6
0.7
0.8
25 Cleaning
63 Cleaning
63 Cleaning
65 Cleaning
Dec 10Sept - Nov,10Q2 - Aug,10
Ad
de
r co
un
t
Q1,10
Tool Component
improvement
Filter
Install
Best Adder
Data
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
25 Cleaning
63 Cleaning
63 Cleaning
65 Cleaning
Dec 10Sept - Nov,10Q2 - Aug,10
Ad
de
r co
un
t
Q1,10
Tool Component
improvement
Filter
Install
Best Adder
Data
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
25 Cleaning
63 Cleaning
63 Cleaning
65 Cleaning
Dec 10Sept - Nov,10Q2 - Aug,10
Ad
de
r co
un
t
Q1,10
Tool Component
improvement
Filter
Install
Best Adder
Data
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
25 Cleaning
63 Cleaning
63 Cleaning
65 Cleaning
Dec 10Sept - Nov,10Q2 - Aug,10
Ad
de
r co
un
t
Q1,10
Tool Component
improvement
Filter
Install
Best Adder
Data
SEMATECH Nanodefect Center
SEMATECH Confidential 25
Stress and Cycle Testing Capability
Custom designed test chambers
• In atmosphere
• In vacuum
• Under inert gas plasma
• Under reactive gas plasma
• Under ion beam exposure
Particle Measurement Capabilities
• Particle Counters
• Particle Sizer
• Electrospray Aerosol Generator
• Optical Counter
Substrate Inspection Capability
Lasertec M1350 ~70nm / M7360 ~35nm
• Direct defect detection to 35nm
• Confocal microscope
• Marking capability
• AFM and FIB/SEM/EDS for
>70nm defect analysis
• AES and TEM are capable of
<10nm and are necessary for
smaller <70nm defects
Substrate cleaning
Substrate inspection
Substrate inspection
Blank substrate
mask or wafer
Test chamber
State-of-the-Art Infrastructure >$100M investment in place today at SMT
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Mask Blank Defect Mitigation
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Mask Standards And ITRS
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2013 Mask ITRS Roadmap Revision Discussed
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EUV Mask Standards Summary
• E152 mask carrier (EUV-pod) standard
– Line-item revision ballot under review with SEMI technical editing
– To submit for Cycle 3 voting (5/1 – 5/31/13)
• P48 mask blank fiducial mark standard
– Revision ballot drafted, with placeholder specifications (TBD by data)
– Technical development on-going
• P37 mask blank standard
– Revision ballot voted during 2012 Standard Cycle 6. Final approval expected this week at SEMI Standard Committee meeting.
• Mostly, to document capping layer conductivity requirement
• P40 mask mounting and T16 data matrix standards
– No action needed: Both mask chucking requirement and 2D bar code format meet needs.
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SEMATECH Confidential
E152 Line-Items Ballot Include Eight (8) Items
• Ballot Item One – Add two rear purge areas
• Ballot Item Two – Add two front purge areas
• Ballot Item Three – Maximum mass increased for EUV Carrier components
• Ballot Item Four – The outer pod door closing force, latching torque, KC pin height and OHT flange height need to be clarified
• Ballot Item Five – The RFID location within outer carrier needs to be clarified with new labels on Figures within standard and definition of transponder
• Ballot Item Six – Define eight (8) outer carrier info pad configurations
• Ballot Item Seven – Correct and clarify values x4, y5 and z15
• Ballot Item Eight – Clarify reticle position within inner pod by re-defining x1, y1
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SEMATECH Confidential
Ballot Status And Plan
• Line-item ballot draft completed
– Need minor touch up and
– Critical review with SEMI Standard Technical Writer
• Ballot to be submitted for Cycle 3, 2013 (of SEMI Standards)
– Ballot submission date: April 17, 2013
– Voting period: May 1 to 31, 2013
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SEMATECH Confidential
Consensus reached for three (3) changes:
1. Where vertically in the film stack to pattern markers
2. Replace small crosses with added requirements for the central areas of large crosses
3. Update current P48 placeholders with proven specifications
P48 Revision And Status
New layout, with a partial marker
at the unbeveled corner.
New Marker
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SEMATECH Confidential
Plan
• Fiducial development
- Optimize mark line specifications through contrast and positioning accuracy tests
Completion date: end of Q1, 2013 (overly agressive)
Owner: Fiducial team / stakeholders
• Standard revision
– New ballot drafted with placeholders of requirements
– Submit ballot, once technical specifications become available
Targeted Yellow Ballot submission: July, 2013, but pending on completion of fiducial development
Owner: SEMI Fiducial TF
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Mask TWG Plans
• Identify EUV mask gaps for HVM
• Coordinate standardization activities
• Coordinate industry fiducial mark development activities:
− Optimize ficucial patterning specification, for contrast and defect locating accuracy.
− Streamline mask blank defect mitigation strategy
• Facilitate industry EUV pellicle discussion − Consolidate industry EUV pellicle assessment
− Identify required infrastructure elements
• Next TWG: Tentatively at next EUVL
Symposium
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