icst2014-jall-siox-end.docx - 1569978023productividad.cimav.edu.mx/productividad/adjuntos... ·...
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94 96 98 100 102 104 106 108 1100.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
No
rmali
ze
d (
A.
U.)
Binding Energy (E) (eV)
Deep
Middle
Surface
Flow 50 sccm
As-growth
500 1000 1500 2000 2500
Inte
nsity%(
U.A
.)
Wavenumber%(cm:1
)
%Annealing
%As:growth
Distance%5mm
Flow%50sccm
500 1000 1500 2000 2500
Inte
nsit
y%(
U.A
.)
Wavenumber%(cm:1
)
%Annealing
%As:growth
Distance%5mm
Flow %100sccm
500 1000 1500 2000 2500
Inte
nsity%(
U.A
.)
Wavenumber%(cm:1
)
%Annealing
%As:growth
Distance%5mm
Flow%150sccm
94 96 98 100 102 104 106 108 1100.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Binding Energy (E) (eV)
Flow 50 sccm
AnnealingN
orm
ali
ze
d (
A.
U.)
Deep
Middle
Surface
94 96 98 100 102 104 106 108 1100.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
No
rma
lized
(A
. U
.)
Flow 100 sccm
As-growth Deep
Middle
Surface
Binding Energy (E) (eV)
94 96 98 100 102 104 106 108 110
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
N
orm
ali
zed
(A
. U
.)
Deep
Middle
Surface
Binding Energy (E) (eV)
Flow 100 sccm
Annealing
0 10 20 30 40
0
10
20
30
40
50
60
Flow 50 sccm
As-growth
Ato
mic
Perc
en
t (a
t. %
)
Etch Level
O1s
C1s Si2p
0 10 20 30 40
0
10
20
30
40
50
60
Ato
mic
Pe
rce
nt
(at.
%)
Flow 50 sccm
Annealing
Etch Level
O1s
C1s
Si2p
0 10 20 30 40
0
10
20
30
40
50
60
Etch Level
Ato
mic
Perc
en
t (a
t. %
)
Flow 100 sccm
As-growth
O1s C1s
Si2p
0 10 20 30 40
0
10
20
30
40
50
60
Etch Level
Ato
mic
Perc
en
t (a
t. %
)
Flow 100 sccm
Annealing
O1s
C1s
Si2p
600 650 700 750 800 850
0
20000
40000
60000
80000
100000
120000
140000
160000
180000
200000
Inte
nsit
y)(
u.a
.�
Wavelength)(nm�
)As=growth
)Annealing
Flow)of)50sccm
600 650 700 750 800 850
0
200000
400000
600000
Inte
nsit
y(�
a.u
.)
Wavelength(�nm)
(As<growth
(Annealing
Flow(of(100sccm
600 650 700 750 800 850
0
5000
10000
15000
20000
25000
30000In
ten
sity
(a.u
.�
Wavelength)(nm�
)As=growth
)Annealing
Flow)of)150sccm
200 300 400 500 600 700 800 900 10000
10
20
30
40
50
60
70
80
90
100
Tra
nsm
itta
nce
+(%
+T)
Wavelength+(nm)
+As?growth
+Annealing
Flow+of+50sccm
200 300 400 500 600 700 800 900 1000
0
10
20
30
40
50
60
70
80
90
100
Tra
nsm
itta
nce
+(%
+T)
Wavelength+(nm)
+As?growth
+AnnealingFlow+of+100sccm
200 300 400 500 600 700 800 900 1000
0
10
20
30
40
50
60
70
80
90
100
Tra
nsm
itta
nce
+(%
+T)
Wavelength+(nm)
+As?growth
+Annealing
Flow+of+150sccm
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
(αh
v�̂
1/3
Energy)(eV�
)5mm8�72°C
Flow)of)100sccm
3.21eV
