hwang - adaptive multimode sensing - spring review 2013
DESCRIPTION
Dr. Jim Hwang presents an overview of his program, Adaptive Multimode Sensing, at the AFOSR 2013 Spring Review. At this review, Program Officers from AFOSR Technical Divisions will present briefings that highlight basic research programs beneficial to the Air Force.TRANSCRIPT
1 Distribution A: Approved for public release; distribution is unlimited
Integrity Service Excellence
Adaptive
Multimode
Sensing
Date: 07 03 2013
Jim Hwang Program Officer
AFOSR/RTD Air Force Research Laboratory
2 Distribution A: Approved for public release; distribution is unlimited
2013 AFOSR SPRING REVIEW 3001B PORTFOLIO OVERVIEW
NAME: Jim Hwang BRIEF DESCRIPTION OF PORTFOLIO: Adaptive Multimode Sensing LIST SUB-AREAS IN PORTFOLIO:
I. Adaptive Multimode Sensing – Emphasize tunable detectors and different detection modes such as polarization and phase (in addition to intensity and color). Main challenge: phase detection.
II. Novel Infrared Sensors – Emphasize novel materials and structures such as quantum dots, nano-wires, type-II superlattices, and 3D integration. Main challenge: dark current.
III.Solar Cells, Thermoelectric Coolers & Others – Deemphasize to focus portfolio with reducing budget.
3 Distribution A: Approved for public release; distribution is unlimited
Motivation Shorten time from sense to kill; avoid drowning in data
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-2 V
S.I. GaAs Substrate
LWIR AlGaAs/GaAs QWIP
NIR AlGaAs/GaAs PIN
-2 V
S.I. GaAs Substrate
LWIR AlGaAs/GaAs QWIP
NIR AlGaAs/GaAs PIN
Near IR LWIR
77 K
3-Color detector demonstrated, too.
Optically-Switched 2-Color Infrared Detector Yong-Hang Zhang (Arizona State) & Elizabeth Steenbergen (AFRL/RXAN)
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Speed/Sensitivity Trade-Off of IR Detectors Vladimir Mitin (Buffalo) & Andrei Sergeev (Buffalo)
Potential barriers around charged InAs quantum dots
(QDs) in GaAs prevents recombination and
prolongs electron lifetime
Charged QDs strongly enhance IR response of
photo-detectors/solar cells
p+ GaAs InAs QDs n+ GaAs
InAs QDs n+ GaAs
n+ GaAs
6 Distribution A: Approved for public release; distribution is unlimited
Electrically Switchable Plasmonic Polarizers Xuejun Lu (Mass-Lowell)
Field distribution (resonance wavelength) can be switched by electrically biasing the polarizer
Rec
tang
ular
Arr
ay o
f A
u Pl
asm
onic
Pol
ariz
ers
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Spectral-Polarization Imaging Viktor Gruev (Washington, St. Louis)
Color Filters Angle of Polarization Image
SEM of Al Nanowires
Si
Si Cone
Polarization Filter
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0 100 200 300 400 500 600 700
0.0
0.1
0.2
0.3
0.4
Pho
tocu
rren
t (µA
)
Time (ns)
x0.3PbS QD
2 nm
(111) planes
(111) planes
0.004 0.006 0.008 0.010 0.012 0.0141E-5
1E-4
1E-3
0.01
0.1250 167 125 100 83 71
1E-1
QD
Dec
ay R
ate
(ns-1
)
1E-2
T (K)
1/T ( K-1)
Non-radiative Energy Transfer
Si
Non-radiative Energy Transfer from Quantum Dots
Anupam Madhukar (S. Cal.), M. Mahalingam (RXAN) & G. Brown (RXAN)
Controlled energy/charge transfer between colloidal nanostructures and conventional semiconductors
Substrate
QD
10−1
10−2
10−3
10−4
10−5 Pho
tolu
min
esce
nce
Dec
ay (/
ns)
Si
9 Distribution A: Approved for public release; distribution is unlimited
Crystalline Bismuth Nanowire Jimmy Xu (Brown)
Bi Pt
Bi Pt
IR/THz Detector
• Bi: only known natural negative index material @ 60um or 5THz
• Bi oxides easily • 1st Bi/Pt heterojunction
successfully grown
10 Distribution A: Approved for public release; distribution is unlimited
InAs/GaSb Type II Superlattices Sanjay Krishna (New Mexico), Vincent Cowan (RVSS), Christian Morath (RVSS) & John Hubbs (RVSS)
Collaboration with Raytheon Vision Systems
• Type II superlattices with antimonides barriers can compete with HgCdTe for infrared sensing
• Strong interests from AFRL (RX, RY, RV), Army NVL, MDA and DARPA
• Enhanced multimodal functionality (color, polarization, dynamic range, phase) through integration with metamaterials
Mid-IR Response @ 420 K!
GaSb
InAs
EC
EV
11 Distribution A: Approved for public release; distribution is unlimited
Single-Crystal Semimetal/Semiconductor Nano-Composites
Chris Palmstrøm (UCSB) & Kurt Eyink (AFRL/RXAN)
Incr
easi
ng E
rSb
com
posi
tion
[001
] ρ˔ ρ//
{110}
GaSb
ErSb
GaSb
ErSb
GaSb (ErSb)x(GaSb)1-x (Semimetal) (Semiconductor)
•ErSb/GaSb nano-composites grown by molecular beam epitaxy
•Buried conductive layers for multicolor infrared detectors
•THz polarizers embedded in III-V heterostructures
12 Distribution A: Approved for public release; distribution is unlimited
Funding Trend
I. Adaptive Multimode Sensing – Emphasize tunable detectors and different detection modes such as polarization and phase (in addition to intensity and color). Main challenge: phase detection.
II. Novel Infrared Sensors – Emphasize novel materials and structures such as quantum dots, nano-wires, type-II superlattices, and 3D integration. Main challenge: dark current.
III.Solar Cells, Thermoelectric Coolers & Others – Deemphasize to focus portfolio with reducing budget.