high performance hybrid cmos image sensors · high performance hybrid cmos image sensors presented...

Teledyne

Providing the best imagesof the Universe

High PerformanceHybrid CMOS Image Sensors

Presented to

James W. Beletic29 October 2010

2

NICMOS, WFC3, ACS Repair NIRCam, NIRSpec, FGSBands 1 & 2

Space AstronomySpace Astronomy

Lander (çiva) CRISM (Vis & IR) IR spectrograph IR spectrograph

HST JWST

New HorizonsDeep Impact& EPOXI

MarsReconnaissanceOrbiter

RosettaWide Field InfraRedSurvey Telescope

previously known as theJoint Dark Energy Mission

(JDEM)

JMAPS

4K×4K arrays & electronics

WFIRST

WISE

EPOXI encounter with Comet Hartley 2is next week ! November 4, 2010

3

Earth and Lunar ScienceEarth and Lunar Science

NPOESSCrIS

CHANDRAYAAN-1

Moon Mineralogy Mapper(Vis-IR)

OCOOrbiting Carbon

Observatory(Vis & IR)

AURA

Tropospheric Emission SpectrometerIR FT Spectrometer

GOES-R

ABI(LWIR)

EO-1

LEISA Atmospheric

Corrector(IR arrays)

GLORY

(SWIR)

Visible to 16.5 micronsVisible to 16.5 microns

Working on development for several future missionsHyspIRI (Vis-SWIR and Thermal IR), ACE, AVIRISng, PRISM

LDCMTIRS Himawari–8,9

4

Leading Supplier of IR Arrays To GroundLeading Supplier of IR Arrays To Ground--based Astronomybased Astronomy

• H2RG (2048×2048 pixels) is the leading focal plane array in IR astronomy• Shipped over 40 science grade H2RG FPAs for facility class instruments

to the major ground based observatories around the world • Six 4096×4096 pixel mosaics operating at major telescopes

– Two more mosaics to be commissioned in the next year• SIDECAR ASIC based focal plane electronics

ESO Very Large Telescope (VLT) Facility - Chile

Magellan Telescopes, OCIW - Chile

Calar Alto Observatory – Spain

5

Camarillo,California

Other MarketSegments

Astronomy& Civil Space

Directorate100% dedicatedto the scientificapplications of

imaging sensors

Teledyne Scientific & Imaging

Camarillo,California

Thousand Oaks,California

Acquired by Teledyne September 2006

6J.W. Beletic – Scientific Imaging Sensors – NOAO – October 2010

Silicon crystal lattice

Crystals are excellent detectors of light

• Simple model of atom– Protons (+) and neutrons in the nucleus

with electrons orbiting


The Astronomer’s Periodic Table

H1He

2

METALS


II III IV V VI

Detector FamiliesSi - IV semiconductorHgCdTe - II-VI semiconductorInGaAs & InSb - III-V semiconductors


Photon DetectionConduction Band

Valence Band

Eg

For an electron to be excited from theconduction band to the valence band

hν > Eg

h = Planck constant (6.6310-34 Joule•sec)ν = frequency of light (cycles/sec) = λ/c

Eg = energy gap of material (electron-volts)

1.68* – 2.60.73 – 0.48InGaAsIndium-Gallium-Arsenide

250.05Si:AsArsenic doped Silicon5.50.23 InSbIndium Antimonide

1.24 – 181.00 – 0.07HgCdTeMer-Cad-Tel

1.11.12SiSilicon

λc (μm)Eg (eV)SymbolMaterial Name

λc = 1.238 / Eg (eV)

*Lattice matched InGaAs (In0.53Ga0.47As)


Tunable Wavelength: Valuable property of HgCdTeHg1-xCdxTe Modify ratio of Mercury and Cadmium to “tune” the bandgap energy

( )xTxxxEg 211035.5832.081.093.1302.0 432 −×++−+−= −

G. L. Hansen, J. L. Schmidt, T. N. Casselman, J. Appl. Phys. 53(10), 1982, p. 7099


Absorption DepthThe depth of detector material that absorbs 63.2% of the radiation

(1 - 1/e) of the energy is absorbed

1 absorption depth(s) 63.2% of light absorbed2 86.5%3 95.0% 4 98.2%

For high QE, thickness of detector material should be ≥ 3 absorption depths


Absorption Depth of HgCdTe Rule of Thumb

Thickness of HgCdTe layerneeds to be about equalto the cutoff wavelength


6 steps of light detection

Sen

sitv

ity

1. Light into detectorAnti-reflection coating

2. Charge GenerationDetector MaterialSilicon

3. Charge CollectionElectric Fields in detectorcollect electrical charge

Source followeramplifier in each pixel

Source followeramplifier in each pixel

4. Charge-to-VoltageConversion

Random accessor full frame readRandom accessor full frame read 5. Signal Transfer

6. DigitizationSIDECAR ASICSIDECAR ASIC

QuantumEfficiency

Point SpreadFunction

Readout noise,crosstalk

Det

ecto

r Arra

yR

eado

ut a

rray

16

Hybrid CMOS Imaging SensorsHybrid CMOS Imaging Sensors

Large, high performance hybrid CMOS arrays

Three Key Technologies

1. Growth and processing of the detector layer

2. Design and fabrication of the CMOS readout integrated circuit (ROIC)

3. Hybridization of the detector layer to the CMOS ROIC


Growth of high performance HgCdTeMolecular Beam Epitaxy (MBE)

– Enables very accurate deposition ⇒ “bandgap engineering”– Teledyne has 4 MBE machines for detector growth

RIBER 10-in MBE 49 SystemRIBER 10-in MBE 49 System

RIBER 3-in MBE SystemsRIBER 3-in MBE Systems

10 inch diameter platen allows

simultaneous growth on four 6x6 cm

substrates

3 inch diameter platen allows

growth on one 6x6 cm

substrate

More than 8000 MCT wafers grown to date

18

Wavelength (microns)

Atmospheric Transmission

“Standard” Ground-based astronomycutoff wavelengths

Near infrared (NIR) 1.75 µm J,HShort-wave infrared (SWIR) 2.5 µm J,H,KMid-wave infrared (MWIR) 5.3 µm J,H,K,L,M

HgCdTe Cutoff Wavelength


HybridizeBond &

Test

Sensor Chip Assembly

CdZnTe substrate MCT epilayer

MBEgrowth

DetectorProcessing

Indium bump,Dice Detector arrays

Processed wafer

Probe,In bump Dice

ROIC DieReceive wafers from foundry

CMOSmixed signaldesign

Fabrication at foundry

Focal Plane Array

Packaging

Detector FabricationDetector Fabrication

Multiplexer Design and FabricationMultiplexer Design and Fabrication

HgCdTe IR FPA Manufacturing Process

28

Backfill, Substrate Removal

& AR coat

20

Quantum Efficiency of substrate-removed HgCdTe

Quantum Efficiency of 2.3 micron HgCdTe

21J.W. Beletic – Scientific Imaging Sensors – NOAO – October 2010 21

HgCdTe Quantum EfficiencyMeasured by the European Southern Observatory

Data: Courtesy of ESO, KMOS project

Cleared for Public Released by the Office of Security Review of the Department of Defense (08-S-0170) 22J.W. Beletic – Scientific Imaging Sensors – NOAO – October 2010

Cosmic Rays and Substrate Removal• Cosmic ray events produce clouds of detected signal due to

particle-induced flashes of infrared light in the CdZnTe substrate; removal of the substrate eliminates the effect

*Roger Smith (Caltech) SPIE 5-25-2006

2.5um cutoff, substrate on 1.7um cutoff, substrate on 1.7um cutoff, substrate off

Moon Mineralogy Mapper Moon Mineralogy Mapper Discovers Water on the MoonDiscovers Water on the Moon

Sensor Chip AssemblyFocal Plane Assembly

Instrument at JPL beforeshipment to India

Completion of Chandrayaan-1 spacecraft integrationMoon Mineralogy Mapper is white square at end of arrow

Chandrayaan-1 in thePolar Satellite Launch Vehicle

Launch from SatishDhawan Space Centre

Moon Mineralogy Mapper resolves visible and infraredto 10 nm spectral resolution, 70 m spatial resolution

100 km altitude lunar orbit

• 1024×1024 pixels, 18.5 micron pitch• Substrate-removed 1.7 μm HgCdTe arrays• Nearly 30x increase in HST discovery efficiency

Hubble Space TelescopeHubble Space TelescopeWide Field Camera 3Wide Field Camera 3

Quantum Efficiency = 85-90%Dark current (145K) = 0.02 e-/pix/secReadout noise = 25 e- (single CDS)


Dark CurrentUndesirable byproduct of light detecting materials

• The vibration of the crystal lattice has energies described by the Maxwell-Boltzmann distribution.

• The smaller the bandgap, the colder the required temperature to limit dark current below other noise sources (e.g. readout noise)

Frac

tion

of la

ttice

Energy of vibration

WarmerTemp

Colder Temp

Eg

These vibrations have enough energy to pop

electron out of the valence band of the crystal lattice


Dark Current of HgCdTe Detectors

~9~5 ~2.5

~1.7

Typical InSbDark Current

108

107

106

105

104

103

102

10

1

10-2

10-3

10-4

23021019017015013011090705030

Temperature (K)

DarkCurrent

Electronsper pixelper sec

18 micronsquarepixel

10-1

HgCdTe cutoff wavelength (microns)


HgCdTe hybrid FPA cross-section(substrate removed)

epoxy

MOSFET inputindium bump

implanted p-type HgCdTe(collect holes)

Anti-reflectioncoating

Bulk n-type HgCdTe

silicon multiplexer

OutputSignal

IncidentPhotons


Hybrid Imager Architecture

Mature interconnect technique:• Over 16,000,000 indium

bumps per Sensor Chip Assembly (SCA) demonstrated

• >99.9% interconnect yield

H4RG-104096x4096 pixels

10 micron pixel pitchHyViSI silicon PIN

Teledyne Imaging Sensors

Photo courtesy of RVS

Humanhair


MOSFET Principles

Gate

Sour

ce

Dra

in

Turn on the MOSFET and current flows from source to drain

Add charge to gate & the current flow changes since the effect of the field of the charge will reduce the current

Drain

Gate Metal

SemiconductorSourcecurrent

Top view

Side view

MOSFET = metal oxide semiconductor field effect transistor

Oxide

Fluctuations in current flow produce “readout noise”Fluctuations in reset level on gate produces “reset noise”


CMOS imager pixel architecture

Vddamp drain voltage

OutputDetectorSubstrate

PhotovoltaicDetector


Vresetreset voltage




Reset


“Clock” (green)

“Bias voltage” (purple)


Vresetreset voltage




Enable

Reset

“Clock” (green)

“Bias voltage” (purple)


3T Pixel


Vresetreset voltage Vdd

amp drain voltage

OutputCharge from

detector

Reset

MOSFET Amplifier Noise

Reset Noise• 50 to 100 e- rms

Read Noise• 1.5 to 10 e- rms

Correlated Double Sample (CDS)

• Reset• Read• Put charge on gate• Read


Non-destructive readout enables reduction of noise from multiple samples

Simple Theory (no 1/f noise)

Measured

H2RG array2.5 micron cutoff

Temperature = 77K

CDS = correlated double sample

Example of Noise vs Number of Fowler Samples


Architecture of simplest analog CMOS sensor

Pixel Array

Horizontal Scanner / Column Buffers

Vert

ical

Sca

nner

fo

r Row

Sel

ectio

n

Control &

TimingLogic

(externalelectronics)

Bias Generation& DACs

(external electronics)

Bias Generation& DACs

(external electronics)

Analog Amplification

(optional)

A/D conversion(external electronics)

A/D conversion(external electronics)

Analog Output

Digital Output


HxRG Family of Hybrid Imaging SensorsMost advanced low light imaging sensors in astronomy

H: HAWAII: HgCdTe Astronomical Wide Area Infrared Imagerx: Number of 1024 (or 1K) pixel blocks in x and y-dimensions

R: Reference pixelsG: Guide window capability

Substrate-removed HgCdTe for simultaneous visible & infrared observationHybrid Visible Silicon Imager; Si-PIN (HyViSI)

H2RG

(μm)

37

WISE surveys the IR UniverseWISE surveys the IR Universe

WideWide--field Infrared Survey Explorerfield Infrared Survey Explorer

H1RG2 arrays: 4.2 & 5.4 μm

Over 1.4 million frames taken, entire sky imagedNow on 2nd pass of the sky

Over 1.4 million frames taken, entire sky imagedOver 1.4 million frames taken, entire sky imagedNow on 2Now on 2ndnd pass of the skypass of the sky

38

Orbiting Carbon Observatory (OCO)Orbiting Carbon Observatory (OCO)

Teledyne Focal Plane Arrays

• Three flight FPAs:• O2A band at 0.758-0.772 µm• weak CO2 band at 1.594 -1.619 µm• strong CO2 band at 2.042-2.082 µm

• Hawaii-1RG FPA used for all three bands

• NASA’s Orbiting Carbon Observatory (OCO) will provide:

• precise, time-dependent global measurements of atmospheric carbon dioxide (CO2)

• OCO launch failed in Feb 2009• Teledyne funded to produce new

substrate-removed HgCdTe arrays for the re-flight mission.

H2RG Performance Confirmed by ESO

Mean correlated double sampling (CDS) noise on 3 Science Grade

and Engineering Grade KMOS FPAs

< 10 electrons

Data: Courtesy of ESO, KMOS project

Low noise performance: Fowler-32 noise < 2.5 electrons

Quantum efficiency (QE) greater than 80%

from visible to IR (shown for 2.5 micron

cutoff device)


Infrared Mosaics

HgCdTe 2K x 2K, 18 µm pixelsHgCdTe 4K x 4K mosaic, 18 µm pixels

2×2


Six 4096 x 4096 pixel IR mosaic operationalExample shown is HAWK-I (High Acuity, Wide field K-band Imaging)

European Southern Observatory 4096x4096 pixel mosaic of H2RGsSix operational 4K×4K mosaic of H2 / H2RGs: ESO, Gemini, CFHT, UH, UKIRT, SOAR

Two more 4K×4K mosaics to be commissioned soon: OCIW, MPIA

Serpens Star Forming Region1 million year old stars


Replace this

with this!

1% volume1% power

The SIDECAR ASIC Complete Electronics on a Chip

SIDECAR: System for Image Digitization, Enhancement, Control And Retrieval


SIDECAR ASIC Functionality

Digital ControlMicrocontroller for Clock Generation

and Signal Processing Bias Generator

Amplification and A/D

ConversionData Memory

Program Memory

Data Memory

Digital I/O

Interface

SIDECARSIDECAR

Exte

rnal

Elec

troni

cs

Multi

plex

er, e

.g. H

AWAI

I-2RG

analog mux outanalog

mux out

bias voltages

bias voltages

clocksclocksmain clockmain clock

data indata in

data outdata out

synchron.synchron.

Digital Generic I/O


SIDECAR ASIC Floorplan

22 mm

14.5 mm

45

SIDECAR ASIC SIDECAR ASIC –– Focal Plane Electronics on a ChipFocal Plane Electronics on a Chip

JWST SIDECAR ASIC package

Hubble Space TelescopeSIDECAR ASIC package

(for ACS Repair)

SIDECAR ASIC focal plane electronics kit

SIDECAR ASIC• 36 analog input channels• 36 16-bit ADCs: up to 500 kHz• 36 12-bit ADCs: up to 10 MHz• 20 output bias channels• 32 digital I/O channels• Microcontroller (low power)• LVDS or CMOS interface• Low power:

• <15 mW, 4 channels, 100 kHz, 16-bit ADC• <150 mW, 32 channels, 100 kHz, 16-bit ADC

• Operating temperature: 30K to 300K• Interfaces directly to H1RG, H2RG, H4RG

• Qualified to NASA TRL-9• Vibration, radiation, thermal cycling• Radiation hard to ~100 krad

SIDECAR ASICGround-based package

Next Gen. SIDECAR ASICfor Ground & Space

2010


SIDECAR ASIC Flight Package for JWST

• Ceramic board with ASIC die and decoupling caps

• Invar box with top and bottom lid• Two 37-pin MDM connectors

– FPE-to-ASIC connection– ASIC-to-SCA connection

• Qualified to NASA Technology Readiness Level 6 (TRL-6)

• <15 mW power when reading out of four ports in parallel, with 16 bit digitization at 100 kHz per port. FPE side

SCA side

SIDECAR

James Webb Space TelescopeJames Webb Space Telescope15 H2RG 2K×2K infrared arrays on board (63 million pixels)

NIRCam(Near Infrared Camera)

NIRSpec(Near Infrared Spectrograph)

<6 e- noise for 1000 sec exposure

FGS(Fine Guidance Sensors)

48

Hubble Servicing Mission 4Hubble Servicing Mission 4Hubble Servicing Mission 4

Repair of theAdvanced Camera for Surveys

(ACS)Teledyne SIDECAR ASIC

Repair of theRepair of theAdvanced Camera for SurveysAdvanced Camera for Surveys

(ACS)(ACS)Teledyne SIDECAR ASICTeledyne SIDECAR ASIC


HybridizePackage & Wirebond

Sensor Chip Assembly

Silicon wafer Thinned wafer

ThinningIndium Bumps Dicing

DetectorarraysProcessed wafer

Probe,Indium bump Dice

ROICDieCMOS

mixed signaldesign

Fabrication at foundry

Receive wafers from foundry

H4RG-10 Array

Detector FabricationDetector Fabrication

Multiplexer Design and FabricationMultiplexer Design and Fabrication

JMAPS H4RG-10 Manufacturing Process

Detector Array

Processing

Test


Absorption Depth of Light in Silicon


Absorption Depth of Silicon

• For high QE in the near infrared, need very thick (up to 300 microns) silicon detector layer. • For high QE in the ultraviolet, need to be able to capture photocharge created within 10 nm

of the surface where light enters the detector.• In addition, the index of refraction of silicon varies over wavelength – a challenge for anti-

reflection coatings.

JMAPSJoint Milli-Arcsec Pathfinder Survey

Astrometry Mission

1 milliarcsec is the apparent size of a nickel

in Washington, DC asseen from Camarillo

• Operated by8 SIDECAR ASICs

• H4RG-10 4096×4096 pixel array (10 μm pitch)• Silicon Carbide (SiC) package

• Mosaic of four H4RGs• 67 Megapixel focal plane• Largest CMOS FPA for space

• 20 cm telescope aperture• Silicon carbide optics• Requires 99.9% operability

• First U.S. space astrometry mission• High visibility in the DoD community

• One of two active U.S. Navy space acquisition programs• Technology pathfinder for future DoD missions

53

0

10

20

30

40

50

60

70

80

90

100

300 400 500 600 700 800 900 1000 1100 1200Wavelength, nm

QE,

%

Average QE (JMAPS specs)Model at 295KModel at 193KHVS4K10-3B#1_P1HVS4K10-3B#1_P4HVS4K10-3B#2_P1HVS4K10-3B#2_P4HVS4K10-3B#3_P1HVS4K10-3B#3_P4HVS4K10-3B#4_P1HVS4K10-3B#4_P4

JMAP Quantum Efficiency (QE) SpecificationAverage QE ≥ 70% (Band-1: 450nm – 600nm)Average QE ≥ 80% (Band-2: 600nm-900nm)

JMAPS Quantum Efficiency

• 100 micron thick detector layer

• Single layer anti-reflection coating

• Temperature = 295K


E-ELT

• 4096×4096, 15 µm array• Design readout circuit for high yield

• 4 ROICs per 8-inch wafer• 4-side buttable for large mosaics• Developed for the Extremely Large Telescopes

TMT

GMTPhotons in

Bits out

SIDECAR ASIC

H4RG-15 SCA

Large IR Astronomy Focal Plane DevelopmentLarge IR Astronomy Focal Plane DevelopmentThe Next Step: 4096The Next Step: 4096××4096 pixels4096 pixels

55

Large Format Hybrid Infrared ArraysLarge Format Hybrid Infrared Arrays

Photons in

Bitsout

SIDECARASIC

H4RG-15

H2RG2048×2048 pixels

18 µm pitch37×37 mm

H4RG-104096×4096 pixels


…2048×2048 pixels


H4RG-154096×4096 pixels


16 Mpixel

6×6 cm

Development started Dec 2009First arrays early 2011

SiCpackage

Since2002

Since2006

Since2009

E-ELT

• 4096×4096, 15 µm pixel pitch array• Significantly reduce price / pixel and maintain established H2RG performance• Four-side buttable (three-side close buttable) for large mosaics• H4RG-15 adds:

Programmable column deselect and other advanced features for manufacturabilitySerial register read back

Large Infrared Focal Plane Development: H4RG-15

TMT

GMT

• $6.2M grant received from the U.S. National Science Foundation (NSF)

• Project kicked off December 2009• H4RG-15 readout circuit taped out

25 June 2010• First prototype arrays are planned to

ship to University of Hawaii in summer of 2011 for on-sky testing

57

Spaceflight packaging: JWST Fine Guidance SensorSpaceflight packaging: JWST Fine Guidance Sensor

• Package for H2RG 2048x2048 pixel array

• TRL-6 spaceflight qualified• Interfaces directly to the

SIDECAR ASIC• Robust, versatile package

• Thermally isolated FPA can be stabilized to 1 mK when cold finger fluctuates several deg K

Chart 58

Teledyne Teledyne –– Your Imaging Partner for Astronomy & Civil SpaceYour Imaging Partner for Astronomy & Civil Space

CMOS Design Expertise• Pixel amplifiers – lowest noise to highest flux• High level of pixel functionality (LADAR, event driven)• Large 2-D arrays, pushbroom, redundant pixel design• Hybrids made with HgCdTe, Si, or InGaAs• Monolithic CMOS

• Analog-to-digital converters• Imaging system on a chip• Specialized ASICs• Radiation hard• Very low power

Soft x-ray UV Vis Infrared

0.4 0.9 1610-210-4

HgCdTeSubstrate-removed

Silicon 1.1

μm0.7

Packaging Electronics

State-of-the-art & high TRL• CMOS Design• Detector Materials• Packaging• Electronics• Systems Engineering

TeledyneEnabling humankind to understand the Universe and our place in it

high performance hybrid cmos image sensors · high performance hybrid cmos image sensors presented...

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