goal of this lecture

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© Digital Integrated Circuits2nd Devices

Goal of this lectureGoal of this lecture

Present understanding of device operation nMOS/pMOS as switches How to design complex gates using

nMOS/pMOS transistors

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What is a Transistor?What is a Transistor?

VGS VT

RonS D

A Switch!

|VGS|

An MOS Transistor

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The MOS TransistorThe MOS Transistor

Polysilicon Aluminum

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CMOS devicesCMOS devices

Drain

Gate

Source

p-substrate

p+ n+ n+

LW

Substratecontact

Drain Source

n-well

p+ n+

n-wellcontact

p+

GateAl SiO2

Polysilicon

NMOS PMOS

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The NMOSThe NMOS Substrate: lightly doped (p-) Source and drain: heavily doped (n+) Gate: polysilicon Thin oxide separates the gate and the “channel” Field oxide and field implant isolate the devices

Source

Gate

p-substrate

Polysilicon

n+n+

Drain

p+ field implant

Field oxide(SiO2)

NMOS Transistor

Gate oxide

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MOS Transistors -MOS Transistors -Types and SymbolsTypes and Symbols

D

S

G

D

S

G

G

S

D D

S

G

NMOS Enhancement NMOS

PMOS

Depletion

Enhancement

B

NMOS withBulk Contact

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Threshold Voltage: ConceptThreshold Voltage: Concept

n+n+

p-substrate

DSG

B

VGS

+

-

Depletion

Region

n-channel

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Transistor in LinearTransistor in Linear

n+n+

p-substrate

D

SG

B

VGS

xL

V(x) +–

VDS

ID

MOS transistor and its bias conditions

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Transistor in SaturationTransistor in Saturation

n+n+

S

G

VGS

D

VDS > VGS - VT

VGS - VT+-

Pinch-off

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Summary of MOSFET Operating Summary of MOSFET Operating RegionsRegions

Strong Inversion VGS > VT

Linear (Resistive) VDS < VDSAT

Saturated (Constant Current) VDS VDSAT

Weak Inversion (Sub-Threshold) VGS VT

Exponential in VGS with linear VDS dependence

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MOSFET equationsMOSFET equations Cut-off region

Linear region

Saturation

Oxide capacitance/Gain Factor

Ids Vgs VT 0 0 for

Ids CoxW

LVgs VT Vds

Vds Vds Vds Vgs VT

2

21 0 for

IdsCox W

LVgs VT Vds Vds Vgs VT

2

21 for

Coxox

tox

F / m2 W/L

oxtox

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MobilityMobility

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IIDD versus V versus VGSGS

0 0.5 1 1.5 2 2.50

1

2

3

4

5

6x 10

-4

VGS (V)

I D (

A)

0 0.5 1 1.5 2 2.50

0.5

1

1.5

2

2.5x 10

-4

VGS (V)

I D (

A)

quadratic

quadratic

linear

Long Channel Short Channel

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MOS output characteristicsMOS output characteristics

Linear region: Vds<Vgs-VT

Voltage controlled resistor

Saturation region: Vds>Vgs-VT

Voltage controlled current source

Curves deviate from the ideal current source behavior due to: Channel modulation

effects

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Static CMOS CircuitStatic CMOS Circuit

At every point in time (except during the switching transients) each gate output is connected to either VDD or Vss via a low-resistive path.

The outputs of the gates assume at all times the value of the Boolean function, implemented by the circuit (ignoring, once again, the transient effects during switching periods).

This is in contrast to the dynamic circuit class, which relies on temporary storage of signal values on the capacitance of high impedance circuit nodes.

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Static Complementary CMOSStatic Complementary CMOSVDD

F(In1,In2,…InN)

In1In2

InN

In1In2

InN

PUN

PDN

PMOS only

NMOS only

PUN and PDN are dual logic networks…

…

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NMOS Transistors NMOS Transistors in Series/Parallel Connectionin Series/Parallel Connection

Transistors can be thought as a switch controlled by its gate signal

NMOS switch closes when switch control input is high

X Y

A B

Y = X if A and B

X Y

A

B Y = X if A OR B

NMOS Transistors pass a “strong” 0 but a “weak” 1

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PMOS Transistors PMOS Transistors in Series/Parallel Connectionin Series/Parallel Connection

X Y

A B

Y = X if A AND B = A + B

X Y

A

B Y = X if A OR B = AB

PMOS Transistors pass a “strong” 1 but a “weak” 0

PMOS switch closes when switch control input is low

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Threshold DropsThreshold DropsVDD

VDD 0PDN

0 VDD

CL

CL

PUN

VDD

0 VDD - VTn

CL

VDD

VDD

VDD |VTp|

CL

S

D S

D

VGS

S

SD

D

VGS

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Complementary CMOS Logic StyleComplementary CMOS Logic Style

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Example Gate: NANDExample Gate: NAND

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Example Gate: NORExample Gate: NOR

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Complex CMOS GateComplex CMOS Gate

OUT = D + A • (B + C)

D

A

B C

D

A

B

C

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Constructing a Complex GateConstructing a Complex Gate

C

(a) pull-down network

SN1 SN4

SN2

SN3D

FF

A

DB

C

D

F

A

B

C

(b) Deriving the pull-up networkhierarchically by identifyingsub-nets

D

A

A

B

C

VDD VDD

B

(c) complete gate

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Cell DesignCell Design

Standard Cells General purpose logic Can be synthesized Same height, varying width

Datapath Cells For regular, structured designs (arithmetic) Includes some wiring in the cell Fixed height and width

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Standard CellsStandard Cells

Cell boundary

N Well

Cell height 12 metal tracksMetal track is approx. 3 + 3Pitch = repetitive distance between objects

Cell height is “12 pitch”

2

Rails ~10

InOut

VDD

GND

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InOut

VDD

GND

In Out

VDD

GND

With silicided diffusion

With minimaldiffusionrouting

OutIn

VDD

M2

M1

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A

Out

VDD

GND

B

2-input NAND gate

B

VDD

A

goal of this lecture

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