freescale powerpoint template offered for 2g, 3g and 4g standards including gsm, cdma, wcdma, ......

TM

Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009.

FTF-NET-F0346

RF Division General Introduction and New Products Update

August 27, 2009

Suhail AgwaniPortfolio Manager, RF Division

TM

2Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009.

Agenda

RF Power Transistor Products and Markets

• Introduction

• Market Trends

Product Portfolio

• Next gen HV8 products

• Packaging solutions

Design and Logistics Support

TM


RF Power Transistors Products and Markets :Introduction

TM


Introduction to Freescale’s RF Power Transistors

*Sources: ABI, 2009

Product:RF Power Transistors are the key component of RF power amplifiers employed in cellular infrastructure to broadcast cellular signals over a large area.

Markets Served:Cellular, Industrial, BroadcastFreescale’s RF Cellular portfolio covers all major bands from 700MHz

– 3500MHz. Products offered for 2G, 3G and 4G standards including GSM, CDMA, WCDMA, CDMA2000, TD-SCDMA, and LTE.

Freescale’s Leadership:Market leader in wireless infrastructure power transistors with a market share of 62%*.

Freescale’s Vision:To provide leadership products, with the lowest cost and highestperformance, to enable substantial system level cost reductions.

TM


Market share position: #1

Dedicated, performance-optimized portfolio for all popular frequency bands

Leader in reliability, performance and consistency

Most advanced multi-stage IC portfolio

Only vendor offering high-power, cost-effective over-molded plastic packaging

Leveraging history of leadership and experience to deliver innovative products to new markets

Freescale’s Strengths

Cellular Infrastructure

Broadcast

Industrial, Scientific & Medical

*Sources: Gartner Dataquest, Strategy Analytics

TM


RFD Worldwide Organization

Freescale TempeDesign, Packaging,

Semiconductor Technology, Engineering, Reliability

Marketing, Modeling Application, System

Freescale TempeDesign, Packaging,

Semiconductor Technology, Engineering, Reliability

Marketing, Modeling Application, System

Freescale Toulouse Design, Engineering Marketing, Modeling Applications, System

Freescale Toulouse Design, Engineering Marketing, Modeling Applications, System

Freescale KualaLumpur Final Mfg-

Kuala Lumpur, Malaysia

Freescale KualaLumpur Final Mfg-

Kuala Lumpur, Malaysia

Freescale Tianjin Final Mfg

Tianjin, China

Freescale Tianjin Final Mfg

Tianjin, China

Freescale Shanghai Marketing,

Applications

Freescale Shanghai Marketing,

Applications

Freescale TokyoMarketing, Application

Freescale TokyoMarketing, Application

Freescale Chengdu Design Center

Freescale Chengdu Design Center

Freescale Oak Hill Fab – 8”

Austin, Texas

Freescale Oak Hill Fab – 8”

Austin, Texas

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Cellular Subscriber Facts

Over 1Million new cellular connections added every day

It took 12 years for Subscriber count to reach 1 billion connections and 30 months to get to 2 billion

Today there are almost 4 billion Subscribers across 1050 networks in 222 Countries

Global Technology Market Share : 2009

GSM, 80.4%

CDMA, 10.3%

W-CDMA, 6.7%

iDEN, 0.5% PDC, 0.2%WCDMA HSPA,

1.9%

640 Million Subscribers : 2000

Eastern Europe, 4.0% Asia pacific,

31.0%

Americas, 8.0%

Africa, 2.0%Middle East, 4.0%

Western Europe, 33.0%

North America, 18.0%

4000 Million Subscribers : end 2008

US/Canada, 7.0%

Western Europe, 13.0%

Middle East, 6.0%

Africa, 9.0%Americas, 11.0%

Asia pacific, 43.0%

Eastern Europe, 11.0%

Source: wirelessintelligence.com

TM


Cellular Communications – Industry Trends

OperatorOperator’’s Needss Needs

New frequency bands / spectrum re-use / legacy network support

• Data services driving 3.5G / 4G

• Low ARPU voice services

Rapid network deployment

OPEX reduction• “Green” networks

CAPEX reduction

Impact to RF Amplifier DesignImpact to RF Amplifier DesignPortfolio Expansion to support new Frequency bandsSupport for high speed data services

Multi Carrier / Multi Mode PA’sHigh Peak to Average ratio signalsWider Signal bandwidth (20+ MHz)More stringent Linearity

Faster time to MarketHigh volume manufacturing capability

Lower Power ConsumptionLDMOS Doherty delivers best performance / price ratio

BOM Cost reductionSmaller footprints / Compact PAsImproved reliability and ruggedness

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Product Portfolio :Introduction to Freescale’s 8th Gen LDMOS

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2009 RF Cellular Standard Products Portfolio220 active part numbers220 active part numbers for RF Cellular applications addressing the full spectrum of frequencies and modulation schemes

Band

Modulation

0.4 0.7 0.8 0.9 1.5 1.6

SC/MC-GSM

CDMA

TD-SCDMA

W-CDMA

LTE

TD-LTE

WiMAX

1.8 1.9 2.0 2.1 2.3 2.6 2.7 3.5

35 new products35 new products in active developmentin active development New product Development

Significant Investment

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Next Gen is more than just a die evolution - Freescale delivers a complete package solution that optimizes performance at the system level

Die TechnoDie Techno

MatchingMatching&&

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Challenges associated with Transistor Optimization for Doherty + DPD

5.6pF

10nF

1.0

kΩ

1.2pF

330Ω

330Ω

1.2pF

4.7µ

F

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1.0

kΩ

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F

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5.6pF

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3.3pF

MR

F7S21125HM

RF7S21145H

5.6pF 10µF / 50V

10µF / 50V

10µF / 50V

10µF / 50V

Doherty PCB

Bare LDMOS Die Packaged LDMOS Transistor

• Intrinsic RF Performance

•Thermal Performance of die

•Circuit Design Approach :

Doherty circuit optimization

• Extrinsic RF Performance : Impedance optimization and matching

•Thermal performance of package

Coupled Effects – All elements must be optimized together.together.

Package

TM


Freescale’s 8th Gen RF Power LDMOS (HV8)

HV8 is Freescale’s latest generation of LDMOS technology, achieving Best in Class RF performance in 2G, 3G, and 4G base station power amplifiers.

Internal Use Only

Delivering PerformanceDelivering Performance

Cellular Operators demand “greener” solutions for future

networks

•Best LDMOS Efficiency for Class AB and Doherty applications: up to 46% Doherty efficiency in multi-carrier 2.1 GHz W-CDMA test conditions

•New standards such as LTE and WiMAX create additional challenges: HV8 is specifically optimized to deliver excellent linearity under the most stringent signal conditions.

•High Gain Final stages•High peak power in compact packaging solutions

Tailored SolutionsTailored Solutions

Timely introduction to meet the needs of Multi-carrier GSM, W-

CDMA and LTE applications

•Freescale provides complete reference designs and performance data, including information with Digital Pre-Distortion (DPD)

•Band specific HV8 solutions in development at 700 MHz, 900 MHz, 1.8 GHz, 2.1 GHz and 2.6 GHz.

•Broad portfolio of LDMOS discrete transistors and IC’s in air cavity and over-molded plastic packages•GaAs GPA’s for low power stages.

Cost & ReliabilityCost & Reliability

Reducing costs while improving performance and reliability

•Higher PA efficiency enables significant system level savings (cooling, battery back-up, smaller housing) .

•HV8 product portfolios benefit from innovation in cost effective over-molded plastic packaging

•Outstanding ruggedness•Excellent MTBF figures.

TM


HV8 Product Portfolio - 1 GHz

Product Options

Part Number Rated Power (W) Package

100 NI-780

OM-780

OM-780

NI-880

NI-1230

170

200

260

300

MRF8S9100H/S

MRF8S9170N

MRF8S9200N

MRF8S9260H/S

MRF8S9300H

DEVICE PACKAGING

NI-780H OM-780 NI-1230H NI-1230HSNI-880HNI-780HS

TM


HV8 Performance at 900MHz

TYPICAL PERFORMANCE (1) 1 Carrier WCDMA, 6.5 dB signal PAR, (2 Device Symmetric Doherty), 920-960MHz

Characteristic MRF8S9170N MRF8S9200N MRF8S9260H Unit

Peak Power

Average Power 60 70 90 W

Power Gain (2)

Drain Efficiency (2)

Adjacent Channel Power Ratio (2)

(DPD Corrected)

45 44 43 %

-60 -60 -60 dBc

(1) In Freescale RF test fixture, 50 Ohm system. VDD = 28 V.(2) Measured at Average Power

55.8 56.4 57.6 dBm

17 17 16.5 dB

Doherty reference designs available for all products in family

Peak power level range of 55 – 58 dBm to cover multiple 4 and 6 carrier applications.

Excellent gain and efficiency Video Bandwidth optimization ensures

excellent Linearity in Digital Pre-Distortion (DPD) systems

Cost effective over-molded plastic package (MRF8S9170N, MRF8S9200N)

High device power capability in compact footprint

All devices internally input and output matched, to achieve high terminal impedances

Outstanding device ruggedness and mean time to failure

TM


HV8 Product Portfolio – 2.1 GHz

Product Options

Part Number Rated Power (W) Package

100 NI-780

NI-780

NI-780

NI-780

NI-1230

NI-1230

120

140

170

200

240

MRF8S21100H/S

MRF8S21120H/S

MRF8S21140H/S

MRF8S21170H/S

MRF8S21200H/S

MRF8S21240H/S

DEVICE PACKAGING

NI-780H NI-780HS NI-1230H NI-1230HS

TM


Performance Comparison - HV7 vs. HV8 at 2.1 GHz

2.1 GHz Doherty + DPD Technology ComparisonDPD Corrected Linearity vs. Efficiency

2 Carrier WCDMA

-65

-60

-55

-50

-45

-40

-35

-30

30 35 40 45 50 55

Drain Efficiency (%)

Cor

rect

ed L

inea

rity

(IM3

dBc)

6% Improvementat -55 dBc

HV8 Doherty

HV7 Doherty

Highly efficient, the HV8 product family delivers a 4 to 6 percentage point drain efficiency improvement in Doherty applications at a fixed corrected linearity point when compared to previous Freescale technology generations, such as HV7.

HV8 demonstrates excellent correction over a large dynamic range of output power, resulting in performance benefit for any signal Peak to Average Ratio (PAR).

Improved correction allows for reduction in device rated power required for PA designs

2 Carrier WCDMA, 6.5 dB signal PAR, 101 Configuration

TM


HV8 Performance at 2.1 GHz

MRF8S21100HS TYPICAL PERFORMANCE (1)

2 Carrier WCDMA, 6.5 dB signal PAR, 101 Configuration(2 Device Symmetric Doherty)

Characteristic Pout (dBm)

Peak Power

Power Gain

Drain Efficiency

Intermodulation Distortion (DPD Corrected)

45.8 -56.9 (L)-55.6 (U)

-57.1 (L)-56.0 (U)

-55.8 (L)-54.8 (U) dBc

Adjacent Channel Power Ratio (DPD Corrected)

2110 MHz

2140 MHz

2170 MHz Unit

45.8 46.2 46.1 45.8 %

45.8 -55.0 (L)-54.5 (U)

-54.3 (L)-53.8 (U)

-52.7 (L)-52.3 (U) dBc

(1) In Freescale RF test fixture, 50 Ohm system. VDD = 28 V.ACPR measured in 3.84 MHz bandwidth at 5 MHz offset from each carrier.IMD3 measured in 3.84 MHz bandwidth at 10 MHz offset from each carrier.

- - - 53.8 53.8 53.7 dBm

45.8 15.5 15.8 15.9 dB

HV8’s exceptional broadband behavior, typically covering more than 120 MHz or 2X the target downlink transmit band, in conjunction with optimization for low memory effects, is ideal for multi-carrier or wide signal bandwidth applications.

HV8 increases in gain, typically on the order of 0.5 to 1 dB in a Doherty architecture, also aids in system level efficiency. Driver and predriver stage power transistor power levels can be scaled down accordingly.

TM


Industry Leader in RF Power Packaging

Most comprehensive portfolio of over-molded plastic and air-cavity packages

Industry leader in RF power over-molded plastic packaging

Automated assembly manufacturing for consistency

Dedicated packaging design center for system level application support

Multiple assembly locations for secure supply

Compatibility with high temperature re-flow Pb-free solders

Advanced Packaging Solutions

TM


Freescale’s Over-molded Plastic Family

TM


Ceramic (Air Cavity) Packaging

TM


Support & Beyond

TM


Freescale’s Value Proposition

Performance and Cost• Best in class 8th generation Silicon LDMOS portfolio for all major

cellular bands• Air cavity ceramic and Plastic over molded package options• Surface mount IC options

Applications Support / Time to Market• Doherty reference designs for rapid evaluation and implementation• Transistor models• Advanced load pull capabilities • Thermal analysis• Customer specific optimization and characterization• Worldwide network of Applications Engineers

TM


Freescale’s Value Proposition

Supply chain and Manufacturing capacity• Largest manufacturing capacity in the industry • Competitive, and stable lead times in any market environment• Capable of supporting sudden and unexpected customer demand• In-house 8” state of the art Wafer fabrication facility• In-house test and assembly facility – site has flexible, reconfigurable test capacity

Quality and Reliability• Freescale products adhere to the highest industry standards for quality and reliability. • Products typically demonstrate greater than 100 years mean time to failure.

Simplified Supply Chain• Freescale offers the broadest and deepest portfolio of RF power transistors for cellular

infrastructure of any vendor on the market. • Product portfolios include GPA predrivers, two stage RFIC drivers, and final stage

products at an array of power levels for all cellular bands.

TM


Summary: What Freescale is striving to provide

PPERFORMANCE

AAVAILABILITY

RRELIABILITY

CCOST

freescale powerpoint template offered for 2g, 3g and 4g standards including gsm, cdma, wcdma, ......

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