final_chemical isfet

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Ion-sensitive field-effect transistors Presented By Naveen Kaushik Arnab Bose Subrat Mishra PrasannaThengodkar Electrical Engineering IIT Bombay

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Page 1: Final_Chemical ISFET

Ion-sensitive field-effect transistors

Presented By

Naveen Kaushik Arnab Bose

Subrat Mishra PrasannaThengodkar

Electrical Engineering IIT Bombay

Page 2: Final_Chemical ISFET

Contents

• Motivation

• Existing Techniques

• Introduction to ISFET

• ISFET with membranes

• Challenges

• Novel approach

• Conclusion

Page 3: Final_Chemical ISFET

Introduction

• Chemical sensors are micro-devices that connect the

chemical and electrical domains

• The response of the sensors should be fast and

selective for the analyte.

• Measurement of pH is a very common task of chemical

senors required for many environmental and biomedical

applications

Page 4: Final_Chemical ISFET

Existing techniques Glass membrane electrode

Limitations :

1. the inability to operate at high temperatures,

2. being a bulky device

3. manufacturing difficulties

4. low durability

Page 5: Final_Chemical ISFET

Introduction to ISFET

ISFET- Ion Sensitive Field Effect Transistor

Why FET ? Small size

Fast response time

Reliability Of IC

• In the ISFET, the gate metal electrode of the MOSFET is

replaced by an electrolyte solution which is contacted by

reference electrode

• The metal part of reference electrode can be considered as

the gate of the MOSFET.

Page 6: Final_Chemical ISFET

Dissolved free ions surrounded by water molecules

Page 7: Final_Chemical ISFET
Page 8: Final_Chemical ISFET
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Change of Current(Id) due to change of Vth

• But putting Voltage of opposite polarity we can neutralize surface band bending keeping current constant

• Vref ∞ Reaction near gate-oxide

Page 10: Final_Chemical ISFET

ISFETs

Basic Idea: removal of the metal plate of an

MOSFET and expose the oxide to an

electrolyte

Important:

Vgs - Potential applied between reference

electrode

• Possible Respond mechanisms:

1. Interfacial potential at electrolyte-oxide interface(MOSFET)

2. Diffusion of species through the

oxide Diffusion:

Page 11: Final_Chemical ISFET

ISFET

• Potential drop across:-Solution

• (Bulk diffuse layer OHP IHP

• -Oxide /Electrolyte surface dipoles

• -Capacitance of the oxide

• -Oxide/Semiconductor interface

dipoles

• -Semiconductor

Page 12: Final_Chemical ISFET

Effect of PH on current

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Page 14: Final_Chemical ISFET

Challenges:

• Good interface between Gate oxide and Membrane.

• Size and immobilization of Antibody.

• Temperature stability.

• Proper Controlling of Feedback circuit & maintaining pH stability.

• Lithographic challenges

Page 15: Final_Chemical ISFET

Proposed Solution

• Surface to Volume Ratio should be high

• Solution: 2- D channel sensors

• Example : Graphene sheet, MoS2

Page 16: Final_Chemical ISFET

Conclusion

• High-performance

• Reliable

• Fast Response time

• Small Size

• Respond to any compound By using particular membrane

• low power consumption

• robustness,

• Sensing and analysing DNA, Protein, Enzymes ,Cells

Page 17: Final_Chemical ISFET

References

• Rothberg, Johnathan M (2011). "An integrated semiconductor device enabling non-optical genome sequencing". Nature 475 (7356): 348–52. doi:10.1038/nature10242. ISSN 1476-4687.

• Chang-Soo Lee 1, Sang Kyu Kim 1,2 and Moonil Kim 1 “Ion-Sensitive Field-Effect Transistor for Biological Sensing” Sensors 2009, 9, 7111-7131; doi:10.3390/s90907111

• IEEE Sensor Conference Torneto October 2003 on ISFET, Theory and Practice by Prof.Dr.Ir.P.Bergveld Em, University of Twente, Fac.EE, MESA+ Research Institute

Page 18: Final_Chemical ISFET

Thank you

Page 20: Final_Chemical ISFET

ISFETS

• Electrolyte/Oxide/Semiconductor Interface

• Inner Helmholtz Plane (IHP)

• Specifically adsorbed ions

• amphoteric hydroxyl groups

• Outer Helmholtz Plane (OHP)

• closest approach of solvated ions

• Diffuse (Gouy-Chapman) Layer

• diffuse charge region into the bulk

electrolyte

Page 21: Final_Chemical ISFET

Introduction of potentiometric sensors –Measuring the electrical potential difference at a solid/liquid interface –Nernst Equation

Δφ= RT/F ln ai1/ai2 ai1,2 = fi*ci = activity of ions i

–Constant potential drop at the inner surface of the bulb –Contact between inner KCl solution and the outer solution –Electrochemical couple

Existing Technique

Page 22: Final_Chemical ISFET

Application of membranes for ISFETs sensitive to different ions

Page 23: Final_Chemical ISFET

Introduction

• Problem of miniaturizing

–Less stable

Problematic for in vivo measurements

• Bergveld 1970: Development of an Ion-Sensitive

Solid State Device for Neurophysiologic Measurements

• Advantage of chip technology

• –cheaper

• –Improved characteristics

• –Reproducibility

• Ion-Sensitive Field-Effect Transistor (ISFET)

• –small and rigid

• –fast response