fig. 8. (a) typical photograph of led-i without current driving
DESCRIPTION
Fig. 7. Typical I-V characteristics and dynamic resistances of the LED-I and LED-II. The inset shows the forward I-V characteristics. Fig. 8. (a) Typical photograph of LED-I without current driving. (b) and (c) Typical near-field emission images of the LED-I and the LED-II, respectively. - PowerPoint PPT PresentationTRANSCRIPT
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Fig. 7. Typical I-V characteristics and dynamic resistances of the LED-I and LED-II. The inset shows the forward I-V characteristics.
LED1 LED2
Vf 3.1V 3.5V
WPE 29.2% 21.8%
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Fig. 8. (a) Typical photograph of LED-I without current driving. (b) and (c) Typical near-field emission images of the LED-I and the LED-II, respectively.
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Conclusion
GaN-based blue LEDs using the InGaN insertion layer can effectively improve device performances including the endurance of ESD and light output power.
The better current spreading effect is the dominant factor for contributing to the improvement of device performance.
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References
維基百科http://en.wikipedia.org/wiki/Nitrogen-vacancy_center
半導體技術天地http://www.2ic.cn/html/82/t-326282.html
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Thanks for your attention