enabling analog integration...control power management switch filters vco/ synth filter filter adc...
TRANSCRIPT
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TM
Enabling Analog IntegrationPaul Kempf
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InnovationManufactured
Overview
• The New Analog– Analog in New Markets– Opportunity in Integrated Analog/RF– Outsourcing Trends in Analog
• Enabling Functional Integration– Technology Requirements– Requirement for Analog / RF Foundry
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InnovationManufactured
Digital Integration Drives More Analog Interfaces
ANALOG
DIGITAL
ANALOG
DIGITAL
Analog Modem Analog ModemEthernet (DSL / Cable)
Analog ModemEthernet (DSL / Cable)WLAN 802.11b
Analog ModemEthernet (DSL / Cable)WLAN 802.11a/b/gBluetoothWiMax, UWB …
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InnovationManufactured
Integrated Functions for Added Value
• Limited by available technology• Analog sub-systems have emerged
• CMOS process scaling enable high gate counts for digital SoC
Driver
Mixer
Mixer
PA
PowerControl
Power Management
SwitchFilters
VCO/Synth
Filter
Filter
ADCDAC
DSP
Digital Integration Analog Integration
LNA
OPPORTUNITY
MPU
Memory
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InnovationManufactured
System in a Package (SiP) Progress
DIPSIPSDIPZIP
Through-HoleArea Array
PGA
Through-Hole
SOPSOJTSOPSSOPTSSOP
Quad-LeadedSurface Mount
BGAFBGATBGATFBGA
QFPLQFPTQFP
LeadedSurface Mount
SCSPMCMSiP
Area Array
MCM/SiP
Time
Pin
Cou
nt
Digital Chip (Moore’s Law)
RF/Analog (Analog Integration)
Passives in Package
Custom Discretes Analog Integration
MemoryDigital Integration
Source: Semico
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InnovationManufactured
SiP Growth as the Leading Indicator
0
200
400
600
800
1,000
1,200
1,400
1,600
1,800
2001 2002 2003 2004 2005 2006 2007
Uni
ts a
nd D
olla
rs
$0.00
$0.10
$0.20
$0.30
$0.40
$0.50
$0.60
$0.70
$0.80
ASP
Units
Dollars
ASP
SiP Packaging Sales (Units in Millions, Dollars in Million$US)
Source: Semico
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InnovationManufactured
Outsourcing to Reduce Cost
Source: IC Insights
Advanced Analog/RF(Specialty)
10% 18%
$1B
2%
$4.8B$2.7B
Total Wafer Sales
6% 19% 28%Standard CMOS
1993 2002 2005
$37B $52B $77B
Foundry IDM
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InnovationManufactured
Analog/RF Functions Increasing
• Multi-band ‘world’ phones
• Computing/communications convergence
• Expanding features
• Greater need for integration
Cell Phone Example
Analog/RF functions increasing in multiple consumer, wireless applications
MemoryMemory BasebandProcessorBasebandProcessor
MultimediaProcessor
MultimediaProcessor
Power AmplifierPower Amplifier
WCDMA3G
WCDMA3G
WLANWLAN
GPSGPS
BluetoothBluetooth
TV TunerTV Tuner
CameraSensor
CameraSensor
GSM2.5GGSM2.5G
MixedSignalMixedSignal
SpecialtySilicon
StandardCMOS
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InnovationManufactured
Performance/Cost Optimization
The Advantages of Focusing on Analog/RF Processes
• Smaller size
• Lower cost
• More features
• Predictable performance
Addressing Both Digitaland Analog Scaling
Analog Scaling
0.18µm
0.13µm
0.35µm
0.25µm
Digi
tal S
calin
g
AD
A
D A
D A
AD
A
Jazz SpecialtyStandard CMOS
D A
A
AnalogDigital
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InnovationManufactured
Modular Technology EnablesAnalog Sub-System Integration
2002 20052003 2004
Direct Conversion Radio
Low-Noise SiGe LNAData Converters
Rx M/S
PA
Power AmplifierPower ManagementDigital Control
+ + Functional Scaling+
SiGe BiCMOS6µm Inductor
HV CMOS
V PNPRF LDMOS
SiGe BiCMOS2fF MIM Cap
Power NPNHV CMOS 4fF MIM Cap
6µm Inductor4fF MIM Cap
HV MOS
V PNP
0.35µm 0.25µm 0.18µm 0.13µm
Power NPN
BiCMOSSiGe BiCMOS SiGe
RF CMOSRF CMOS RF CMOS
Tx Rx M/SPA
Tx
PMICPMIC
Rx M/STxRx Tx
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InnovationManufacturedExample: Bipolar Modules
ImprovedPerformance
0
25
50
75
100
125
150
175
200
0.01 0.1 1 10Ic (mA) for Minimum We and Le=1um
Ft (G
Hz)
SiGe 0.35
Si 0.35
SiGe 0.18
Reduced Power Consumption
Analog technology can also provide performance/power consumption advantage
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InnovationManufacturedPower Amplifier Integration in SiGe BiCMOS
Emitter CollectorBase
Collector Implant
10
100
1000
1 3 5 7BVceo (V)
Ft(GHz)
HigherSpeed
Better Power
Efficiency
BetterPower
Efficiency
SBC18
SBC18H2
SBC35
BC35
HigherSpeed
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InnovationManufacturedPower Integration in 0.18µm CMOS
0
5
10
15
20
25
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Id (A)Ft
(GH
Z)
Vds = 5V
High Performance• Ft 20GHz• Ron < 4 Ohm-mm• BVdss > 15V
Silicide Block
HV Drain
Silicide Block
HV Drain
Pwell P-Substrate
RF LDMOS
N+N+Pwell
STI
Extended Drain MOS
Nwell
Power Management Options• Vgs 1.8 3.3 5 12• Vds 1.8 3.3 5 12 20 40
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InnovationManufactured
Vertical PNP Integration
• Push/Pull Amplifiers
• Hard Disk Drive (HDD) Pre-Amp and Driver ICs
• High-Performance Data Converters
GHzV
5017-7
5015-7
Peak BetaFt (Vce = -5V)BVceo
0.18µm VPNP0.35µm VPNP
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InnovationManufacturedUltra-High Performance:
200GHz SiGe BiCMOS
• 200/200GHz Ft and Fmax• Shallow and Deep Trench Isolation• SiGe epitaxial base (vertical scaling)• Self-aligned emitter integration (lateral scaling)
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InnovationManufactured
0.001
0.01
0.1
1
0.01 0.1 1 10 100
Capacitance (pF)
3 Sig
ma M
ismat
ch (%
)
0.01 0.1 1 10 100
Linear VCC - 40 ppm /VQuadratic VCC 25 ppm/V 2
Performance
Common Centroid
2fF/µm2 MIM Capacitor
Scaling Linear Capacitors
0
5
10
15
20
25
0 3 6 9Capacitance Density (fF/mm2)
Bre
akd
ow
n V
olt
age
(V)
4.5-8 fF/µm2 High K MIM
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InnovationManufactured
Inductor Scaling
Thick metal to improve Q or reduce inductor area
1.E+03
1.E+04
1.E+05
1.E+06
0 2 4 6 8 10
Inductance (nH)
Area(µm2)
3µm Top Metal
6µm Top Metal
Constant Q of 10
Integrated Inductors
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InnovationManufactured
Integrated MEMS
MEMS Circuits• Tunable capacitor• RF Filter• Reconfigurable VCO• RF Switch
Example: Tunable capacitor in VCO design courtesyCarnegie Mellon University
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InnovationManufacturedExample: RF/Analog SoC Products
Single Chip TV Tuner – The World’s First with Integrated Tuner + DeMod
Single Chip WLAN RF Solution – The World’s Most Integrated
Single chip 802.11b/gTransceiver, VCOPA integration
Single chip 802.11a/b/gTransceiver, LNA, VCOPA integration
competing 5-chip solutioncompeting 5-chip solution
competing 3-chip solutioncompeting 3-chip solution
Single chip SoCRF to Baseband ICTuner and DeMod Integration
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InnovationManufacturedAnalog Foundry: Design Support
Higher level of investment in design support required in an Analog Foundry
DigitalDigitalLibrariesLibraries
AMS DesignAMS DesignPlatformPlatform
Digital/MSDigital/MSIPIP
PDKPDKAnalog/RFAnalog/RF
ModelsModels
Analog/RF Analog/RF IPIP
DigitalDigitalFoundryFoundry
AnalogAnalogFoundryFoundry
BackendBackendFA/Test/YieldFA/Test/Yield
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InnovationManufactured
Scalable Models
• Physical scalable models for all devices to ensure accurate simulation
• Design flexibility for optimum performance
GATE
NWELL
NF
NS
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InnovationManufacturedScalable RF Inductor Model
Xsize
Port 1
Port 2
WS
* * * *
*
*
* *
N=4 L0 RviaL3 R3
L1 R1
L2 R2
L4 R4
Substrate
Port 1 Port 2L0 Rvia
L3 R3
L1 R1
L2 R2
L4 R4L0 Rvia
L3 R3
L1 R1
L2 R2
L4 R4
Substrate
Port 1 Port 2
Layout Input RF Circuit Model
Sheet ResistancesDielectric ConstantsLayer Thicknesses
…
Technology Parameters =+
Scalable model enables optimization of inductor area/performance
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InnovationManufacturedStatistical Modeling Infrastructure
Device Parameters(e.g., Idsat, Vth, Beta, Ft)
LNA
Implication of Process Variation → Product Yield
Process Parameters(e.g., Tox, Doping, CD)
pfVCC
Circuit Performance(e.g., Gain, NF)
XX10
2 $$$
Product Performance(Yield, Sales)
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InnovationManufacturedWafer / Lot / Fab Specific Models
Select wafer/lot/series of lots from Web siteTAR file with specific model e-mailed to userUser Un-TARs packagePull-down menu in Design Kit enables Ckt simulation
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InnovationManufacturedEnabling Functional Integration
PurePure--Play FoundryPlay FoundryStreamlined Supply ChainStreamlined Supply ChainSeamless Manufacturing Seamless Manufacturing
Modular silicon technology
Complete design platform
Economies of scale
Analog Foundry
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InnovationManufactured
Jazz Semiconductor
For more information visit:www.jazzsemi.com
or email:[email protected]
Thank You