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ELCT 1003: High Speed Electronic Circuit Lecture 13: Power Distribution Network in High Speed Integrated Circuit Dr. Mohamed Abd El Ghany, Department of Electronics and Electrical Engineering [email protected]

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Page 1: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

ELCT 1003:High Speed Electronic Circuit

Lecture 13: Power Distribution Network in High Speed Integrated Circuit

Dr. Mohamed Abd El Ghany, Department of Electronics and Electrical Engineering

[email protected]

Page 2: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Moore’s Law

2Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

http://www.intel.com/technology/mooreslaw/

Page 3: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Trends in Propagation Delay

3Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

Block to block distances are increasing

– Delay of the global wiring is increasing dramatically

*National Technology Roadmap for Semiconductors: Semiconductor Industry Association, 2007

Process Technology Node (nm)

250 32456590130180

100

0.1

10

1

Gate Delay

Local

Global with Repeaters

Global without Repeaters

Relative

Delay

Global

Semi-

Global

Local

Substrate

Page 4: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Power Dissipation of Intel

Microprocessors

4Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings of the IEEE International ASIC/SOC Conference, pp.

26-31 September 2000

At 90 nm technology and below, leakage power management is essential in the ASIC design process.

501001301802500

50

100

150

200

250

Device dimension (nm)

Pow

er (

w)

Leakage

Dynamic

Page 5: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Example of Communication

Structures in System on Chip

5Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

Networks are preferred over buses:

• Higher bandwidth

• Scalability

Page 6: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

High Speed Interconnect Modeling,

Simulation, and Optimization

6Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

Interconnect design has become a dominant issue in high-speed

integrated circuits (ICs).

With the decreased feature size of CMOS circuits, on-chip interconnect

now dominates both circuit delay and power dissipation.

The minimum delay for a

signal to propagate along

an RLC line decreases

while the power dissipation

increases for wider

interconnect

* M.A. El-Moursy, E.G. Friedman / INTEGRATION, the VLSI journal 38

(2004) 205–225

Page 7: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Repeater Insertion Process

7Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

The primary objective of a uniform repeater insertion system is to

minimize the time for a signal to propagate through a long interconnect.

Uniform repeater insertion techniques divide the interconnect into

equal sections and employ equal size repeaters to drive each section.

* M.A. El-Moursy, E.G. Friedman / INTEGRATION, the VLSI journal 38 (2004) 205–225

Page 8: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Interconnect sizing within a repeater

system

8Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

* M.A. El-Moursy, E.G. Friedman / INTEGRATION, the VLSI journal 38 (2004) 205–225

Wire sizing within a

repeater insertion system

affect two design

parameters.

The number

of repeaters

The optimum

size of each

repeater

Page 9: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Propagation delay

9Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

Expressions for the optimum number of repeaters Nopt–RLC and the optimum

repeater size kopt–RLC are

where

* Y.I. Ismail, E.G. Friedman, Effects of Inductance on the propagation delay and repeater insertion in VLSI circuits,

IEEE Trans. Very Large Scale Integration Systems 8 (2) (2000) 195–206.

C0 and R0 are the input capacitance and output resistance of a

minimum size repeater, respectively.

Rint(Wint), Cint(Wint), and Lint(Wint) are the interconnect line resistance,

capacitance, and inductance as functions of the interconnect width.

Page 10: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Propagation delay

10Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

Expressions for the optimum number of repeaters Nopt–RLC and the optimum

repeater size kopt–RLC are

where

The interconnect resistance decreases with increasing line width,

increasing Lint/Rint the ratio between the line inductance and resistance.

An increase in Lint/Rint decreases the number of inserted repeaters to

achieve the minimum propagation delay.

For an RLC line, the minimum signal propagation delay decreases with

wider wires until no repeaters should be used.

* Y.I. Ismail, E.G. Friedman, Effects of Inductance on the propagation delay and repeater insertion in VLSI circuits,

IEEE Trans. Very Large Scale Integration Systems 8 (2) (2000) 195–206.

Page 11: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Propagation delay

11Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

For a copper interconnect line, low k dielectric material, R0=2kΩ, and C0=1fF, Nopt-

RLC is determined for minimum propagation delay for different line widths.

For an RLC line, the optimum number of repeaters which minimizes the signal

propagation delay decreases with an increase in the line width for all line lengths.

* M.A. El-Moursy, E.G. Friedman / INTEGRATION, the VLSI journal 38 (2004) 205–225

Page 12: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Propagation delay

12Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

For an inductive interconnect line, the total signal

propagation delay is:

* M.A. El-Moursy, E.G. Friedman / INTEGRATION, the VLSI journal 38 (2004) 205–225

where tpd-section(Wint) is the signal

delay of each RLC section as a

function of the interconnect

width.

The lower limit in the propagation

delay decreases with increasing line width

until the number of repeaters is zero.

Page 13: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Power Dissipation

13Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

Short-circuit power dissipation

* M.A. El-Moursy, E.G. Friedman / INTEGRATION, the VLSI journal 38 (2004) 205–225

Short-circuit current flows when both transistors within an inverting

repeater are simultaneously on.

Thin lines cause less dynamic power and higher short-circuit power to be

dissipated.

For thin resistive lines, the number of repeaters can be large. The short-

circuit power dissipation in all repeaters along a line is considered.

Short-circuit power depends on both the input signal transition time and

the load characteristics.

A simple and accurate expression for the short-circuit power

dissipation of a repeater driving an RC load is

where Ipeak is the peak current that flows from Vdd to ground,

tbase is the time period during which both transistors are on

The total short-circuit power of a repeater system is

Page 14: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Power Dissipation

14Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

Dynamic power dissipation

* M.A. El-Moursy, E.G. Friedman / INTEGRATION, the VLSI journal 38 (2004) 205–225

The dynamic power is the power required to charge and discharge the

various device and interconnect capacitances.

The total dynamic power is the summation of the CV2f power from the

line capacitance and the repeaters.

where

Page 15: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Power Dissipation

15Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

Total power dissipation

* M.A. El-Moursy, E.G. Friedman / INTEGRATION, the VLSI journal 38 (2004) 205–225

Page 16: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Global Interconnect Width and

Spacing Optimization

16Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

Cross section of global interconnects

W is the interconnect

width,

S is the interconnect

spacing,

T is the interconnect

thickness

Tox is the dielectric height

Page 17: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Global Interconnect Width and

Spacing Optimization

17Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

It is shown that the optimized delay per unit length increases as the

line inductance increases.

However, even if the line inductance is considered, there will be less

than 8% improvement in the accuracy of the delay per unit length.

Besides, if the line inductance is less than a critical inductance lcrit ,

the response will be overdamped, which is very similar to the Elmore

delay response *

It is validated that the overdamped criterion (l < lcrit )is being satisfied

for a bigger range of line inductance and the effect of inductance on

interconnect performance is reduced as the technology scales.

Therefore, inductance effects are not considered in the global

interconnect model in this section

* W. C. Elmore, “The transient response of damped linear network with particular regard to wide-band amplifiers,”

J. Appl. Phys., vol. 19, pp. 55–63, 1948

Page 18: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Effects of Width and Spacing on

Global Interconnect Performance

18Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

Where Echip is the chip width for global interconnects and L is the

interconnect length. The global interconnect pitch is W+S.

Assuming all of global interconnects have the same line width

and line spacing, then the number of global interconnects N is :

SW

EN

chip

int

Page 19: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Effects of Width and Spacing on

Global Interconnect Performance

19Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

The time constant of the segment is:

Where the interconnect capacitance per unit

length is given by

where

ca represents the fringing capacitance,

cb represents the parallel plate capacitance to the top and bottom layers of

metal and is proportional to interconnect width,

cc represents the coupling capacitance between the neighboring

interconnects and is inversely proportional to interconnect spacing.•Li, X.-C., Mao, J.-F., Huang, H.-F., and Liu, Y.: ‘Global interconnect width and spacing optimization for latency, bandwidth and power dissipation’,

IEEE Transactions on Electron Devices, vol. 52, no. 10, October 2005, pp. 2272–2279

Page 20: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Effects of Width and Spacing on

Global Interconnect Performance

20Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

The time constant of the segment is:

The total delay D of global interconnects is

proportional to the delay per unit length ,

Therefore, the optimal repeater size Kopt and the optimal inter-buffer

segment line length hopt is given by

•Li, X.-C., Mao, J.-F., Huang, H.-F., and Liu, Y.: ‘Global interconnect width and spacing optimization for latency, bandwidth and power dissipation’,

IEEE Transactions on Electron Devices, vol. 52, no. 10, October 2005, pp. 2272–2279

Page 21: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Effects of Width and Spacing on

Global Interconnect Performance

21Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

The optimal delay per unit length is :

where a is a constant and cannot be changed for a given technology

The delay of one segment of length hopt is

•Li, X.-C., Mao, J.-F., Huang, H.-F., and Liu, Y.: ‘Global interconnect width and spacing optimization for latency, bandwidth and power dissipation’,

IEEE Transactions on Electron Devices, vol. 52, no. 10, October 2005, pp. 2272–2279

Page 22: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Effects of Width and Spacing on

Global Interconnect Performance

22Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

The bandwidth B of global interconnects with the

optimal buffer insertion is given by:

which is proportional to the number of global interconnects N and inversely

proportional to the delay of global interconnects D.

•Li, X.-C., Mao, J.-F., Huang, H.-F., and Liu, Y.: ‘Global interconnect width and spacing optimization for latency, bandwidth and power dissipation’,

IEEE Transactions on Electron Devices, vol. 52, no. 10, October 2005, pp. 2272–2279

Page 23: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Effects of Width and Spacing on

Global Interconnect Performance

23Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

The bandwidth B is maximal when :

•Li, X.-C., Mao, J.-F., Huang, H.-F., and Liu, Y.: ‘Global interconnect width and spacing optimization for latency, bandwidth and power dissipation’,

IEEE Transactions on Electron Devices, vol. 52, no. 10, October 2005, pp. 2272–2279

The total repeater area of global interconnects with optimal

buffer insertion is given by

which is proportional to the number of global

interconnects and the size of the repeater,

and inversely proportional to inter-buffer

interconnect length

Page 24: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Effects of Width and Spacing on

Global Interconnect Performance

24Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

The energy dissipation consumed by each

interbuffer line in a clock period can be

approximated by:

•Li, X.-C., Mao, J.-F., Huang, H.-F., and Liu, Y.: ‘Global interconnect width and spacing optimization for latency, bandwidth and power dissipation’,

IEEE Transactions on Electron Devices, vol. 52, no. 10, October 2005, pp. 2272–2279

Then the total power consumption is given by:

Increasing width and spacing

decreases both total repeater area

and power consumption.

Page 25: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Width and Spacing Optimization for

the Maximal Figure of Merit

25Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

•Li, X.-C., Mao, J.-F., Huang, H.-F., and Liu, Y.: ‘Global interconnect width and spacing optimization for latency, bandwidth and power dissipation’,

IEEE Transactions on Electron Devices, vol. 52, no. 10, October 2005, pp. 2272–2279

The aim of global interconnect design is to get large bandwidth, small

delay per unit length, small repeater area, and low power consumption

simultaneously.

Unfortunately, large bandwidth requires small global interconnect

width and spacing, but small delay , small repeater area , and low power

consumption all require large global interconnect width and spacing.

Therefore, the figure of merit should be considered for simultaneous

short latency and large bandwidth, which is defined by

D

BF

Page 26: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Width and Spacing Optimization for

the Maximal Figure of Merit

26Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

•Li, X.-C., Mao, J.-F., Huang, H.-F., and Liu, Y.: ‘Global interconnect width and spacing optimization for latency, bandwidth and power dissipation’,

IEEE Transactions on Electron Devices, vol. 52, no. 10, October 2005, pp. 2272–2279

D

BF

The figure of merit for global interconnects with buffer insertion has

the following property:

Setting the derivative of F with respect to W and S to be zero

yield

Page 27: ELCT 1003 High...Department of Electronics and Electrical Engineering ELCT 1003: High Speed Electronic Circuits S. Borkar, “Obying Moore’s Law beyond 0.18 Micron,” Proceedings

Optimal Global Interconnect Parameters

for different Technology Nodes

27Dr. Mohamed Abd el Ghany

Department of Electronics and Electrical Engineering

ELCT 1003: High Speed

Electronic Circuits

•Li, X.-C., Mao, J.-F., Huang, H.-F., and Liu, Y.: ‘Global interconnect width and spacing optimization for latency, bandwidth and power dissipation’,

IEEE Transactions on Electron Devices, vol. 52, no. 10, October 2005, pp. 2272–2279