dual, sige, high-linearity, 700mhz to 1000mhz ...general description the max19985a high-linearity,...
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General DescriptionThe MAX19985A high-linearity, dual-channel, downcon-version mixer is designed to provide approximately8.7dB gain, +25.5dBm of IIP3, and 9.0dB of noise fig-ure for 700MHz to 1000MHz diversity receiver applica-tions. With an optimized LO frequency range of900MHz to 1300MHz, this mixer is ideal for high-sideLO injection architectures in the cellular and new700MHz bands. Low-side LO injection is supported bythe MAX19985, which is pin-pin and functionally com-patible with the MAX19985A.
In addition to offering excellent linearity and noise per-formance, the MAX19985A also yields a high levelof component integration. This device includes twodouble-balanced passive mixer cores, two LO buffers,a dual-input LO selectable switch, and a pair of differ-ential IF output amplifiers. On-chip baluns are also inte-grated to allow for single-ended RF and LO inputs.
The MAX19985A requires a nominal LO drive of 0dBmand a typical supply current of 330mA at VCC = +5.0Vor 280mA at VCC = +3.3V.
The MAX19985/MAX19985A are pin compatible withthe MAX19995/MAX19995A series of 1700MHz to2200MHz mixers and pin similar with the MAX19997A/MAX19999 series of 1850MHz to 3800MHz mixers,making this entire family of downconverters ideal forapplications where a common PCB layout is usedacross multiple frequency bands.
The MAX19985A is available in a 6mm x 6mm, 36-pinthin QFN package with an exposed pad. Electrical per-formance is guaranteed over the extended temperaturerange of TC = -40°C to +85°C.
Applications850MHz WCDMA and cdma2000® Base Stations
700MHz LTE/WiMAX™ Base Stations
GSM850/900 2G and 2.5G EDGE Base Stations
iDEN® Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
Features� 700MHz to 1000MHz RF Frequency Range
� 900MHz to 1300MHz LO Frequency Range
� 50MHz to 500MHz IF Frequency Range
� 8.7dB Typical Conversion Gain
� 9.0dB Typical Noise Figure
� +25.5dBm Typical Input IP3
� +12.6dBm Typical Input 1dB Compression Point
� 76dBc Typical 2LO-2RF Spurious Rejection atPRF = -10dBm
� Dual Channels Ideal for Diversity ReceiverApplications
� 48dB Typical Channel-to-Channel Isolation
� Low -3dBm to +3dBm LO Drive
� Integrated LO Buffer
� Internal RF and LO Baluns for Single-EndedInputs
� Built-In SPDT LO Switch with 46dB LO1-to-LO2Isolation and 50ns Switching Time
� Pin Compatible with the MAX19995/MAX19995ASeries of 1700MHz to 2200MHz Mixers
� Pin Similar to the MAX19997A/MAX19999 Seriesof 1850MHz to 3800MHz Mixers
� Single +5.0V or +3.3V Supply
� External Current-Setting Resistors Provide Optionfor Operating Device in Reduced-Power/Reduced-Performance Mode
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
________________________________________________________________ Maxim Integrated Products 1
19-4185; Rev 0; 8/08
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,or visit Maxim’s website at www.maxim-ic.com.
cdma2000 is a registered trademark of TelecommunicationsIndustry Association.
WiMAX is a trademark of WiMAX Forum.
iDEN is a registered trademark of Motorola, Inc.
Typical Application Circuit and Pin Configuration appear atend of data sheet.
+Denotes a lead-free/RoHS-compliant package.*EP = Exposed pad.T = Tape and reel.
Ordering InformationPART TEMP RANGE PIN-PACKAGE
MAX19985AETX+ -40°C to +85°C 36 Thin QFN-EP*
MAX19985AETX+T -40°C to +85°C 36 Thin QFN-EP*
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS(Typical Application Circuit, VCC = 3.0V to 3.6V, TC = -40°C to +85°C. Typical values are at VCC = 3.3V, TC = +25°C, all parametersare guaranteed by design and not production tested, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functionaloperation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure toabsolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Based on junction temperature TJ = TC + (θJC x VCC x ICC). This formula can be used when the temperature of the exposedpad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junctiontemperature must not exceed +150°C.
Note 2: Junction temperature TJ = TA + (θJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB isknown. The junction temperature must not exceed +150°C.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
VCC to GND...........................................................-0.3V to +5.5VLO1, LO2 to GND ...............................................................±0.3VAny Other Pins to GND...............................-0.3V to (VCC + 0.3V)RFMAIN, RFDIV, and LO_ Input Power ..........................+15dBmRFMAIN, RFDIV Current (RF is DC shorted
to GND through balun)....................................................50mAContinuous Power Dissipation (Note 1) ..............................8.8W
θJA (Notes 2, 3)..............................................................+38°C/WθJC (Note 3).....................................................................7.4°C/WOperating Temperature Range (Note 4) .....TC = -40°C to +85°CJunction Temperature ......................................................+150°CStorage Temperature Range .............................-65°C to +150°CLead Temperature (soldering, 10s) .................................+300°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage VCC R2 = R5 = 600Ω 3.0 3.3 3.6 V
Supply Current ICC Total supply current, VCC = 3.3V 280 mA
LOSEL Input High Voltage VIH 2 V
LOSEL Input Low Voltage VIL 0.8 V
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS(Typical Application Circuit, VCC = 4.75V to 5.25V, TC = -40°C to +85°C. Typical values are at VCC = 5.0V, TC = +25°C, all parame-ters are production tested, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage VCC 4.75 5 5.25 V
Supply Current ICC 330 380 mA
LOSEL Input High Voltage VIH 2 V
LOSEL Input Low Voltage VIL 0.8 V
LOSEL Input Current IIH, IIL -10 +10 µA
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
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RECOMMENDED AC OPERATING CONDITIONS
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Frequency fRF (Note 5) 700 1000 MHz
LO Frequency fLO (Note 5) 900 1300 MHz
U si ng M i ni - C i r cui ts TC 4- 1W- 17 4:1 tr ansfor m er as defined in the Typical Application Circuit,IF matching components affect the IFfrequency range (Note 5)
100 500
IF Frequency fIFUsing alternative Mini-Circuits TC4-1W-7A4:1 transformer, IF matching componentsaffect the IF frequency range (Note 5)
50 250
MHz
LO Drive Level PLO (Note 5) -3 +3 dBm
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS(Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm,PRF = -5dBm, fRF = 700MHz to 1000MHz, fLO = 900MHz to 1200MHz, fIF = 200MHz, fRF < fLO, TC = -40°C to +85°C. Typical valuesare at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF =900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, all parameters are guaran-teed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
fIF = 200MHz, fRF = 824MHz to 915MHz,TC = -40°C to +85°C
7.0 8.7 10.2
Conversion Power Gain GCfIF = 200MHz, fRF = 824MHz to 915MHz,TC = +25°C (Note 9)
7.7 8.7 9.7
dB
Conversion Power Gain Variationvs. Frequency
ΔGC
Flatness over any one of three frequencybands: fRF = 824MHz to 849MHz, fRF = 869MHz to 894MHz, fRF = 880MHz to 915MHz (Note 9)
0.15 0.3 dB
G ai n V ar i ati on Over Tem p er atur e TCG TC = -40°C to +85°C -0.012 dB/°C
TC = -40°C to +85°C 9.2 11.5
Noise Figure NF fRF = 850MHz, fIF = 200MHz,P LO = 0d Bm , TC = + 25°C , V C C = + 5.0V
9.0 10.3dB
Noise Figure TemperatureCoefficient
TCNF TC = -40°C to +85°C 0.018 dB/°C
Noise Figure Under BlockingCondition
NFB
+8dBm blocker tone applied to RF port,fRF = 900MHz, fLO = 1090MHz,PLO = -3dBm, fBLOCKER = 800MHz,VCC = +5.0V (Note 7)
18.8 22 dB
TC = -40°C to +85°C 10.0 12.6Input 1dB Compression Point IP1dB
TC = +25°C (Note 9) 11.0 12.6dBm
fRF = 824MHz to 915MHz,fRF1 - fRF2 = 1MHz, fIF = 200MHz,PRF = -5dBm/tone, TC = -40°C to +85°C
22.5 25.5
Third-Order Input Intercept Point IIP3fRF = 824MHz to 915MHz,fRF1 - fRF2 = 1MHz, fIF = 200MHz,PRF = -5dBm/tone, TC = +25°C (Note 9)
23.5 25.5
dBm
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
4 _______________________________________________________________________________________
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
PRF = -10dBm -63 -76
2LO-2RF Spur Rejection 2 x 2fRF = 800MHz,fLO = 1000MHz,fSPUR = 900MHz
PRF = -5dBm(Note 9)
-58 -71dBc
PRF = -10dBm -65 -78
3LO-3RF Spur Rejection 3 x 3fRF = 800MHz,fLO = 1000MHz,fSPUR = 933.3MHz
PRF = -5dBm(Note 9)
-60 -73dBc
LO Leakage at RF PortfLO = 900MHz to 1300MHz, PLO = +3dBm(Note 10)
-40 -20 dBm
fLO = 900MHz to 1200MHz, PLO = +3dBm(Note 10)
-38 -25
2LO Leakage at RF PortfL O = 1200M H z to 1300M H z, P L O = + 3d Bm (Note 10)
-35 -22
dBm
3LO Leakage at RF PortfLO = 900MHz to 1300MHz, PLO = +3dBm(Note 10)
-50 -28 dBm
4LO Leakage at RF PortfLO = 900MHz to 1300MHz, PLO = +3dBm(Note 9)
-25 -15 dBm
LO Leakage at IF PortfLO = 900MHz to 1300MHz, PLO = +3dBm(Note 10)
-35 -23 dBm
RF-to-IF Isolation fRF = 824MHz to 915MHz (Note 10) 30 38 dB
LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm,fLO1 = 900MHz, fLO2 = 901MHz,PRF = -5dBm (Notes 8, 10)
40 46 dB
Channel-to-Channel IsolationRFM AIN ( RFD IV ) conver ted p ow er m easur ed at IFD IV ( IFM AIN ) , r el ati ve to IFM AIN ( IFD IV ) ,al l unused p or ts ter m i nated to 50Ω ( N ote 9)
40 48 dB
LO Switching Time 50% of LOS E L to IF settl ed w i thi n 2 d eg r ees 50 1000 ns
RF Input Impedance ZRF 50 Ω
RF Input Return LossLO on and IF terminated into matchedimpedance
20 dB
LO Input Impedance ZLO 50 Ω
RF and IF terminated into matchedimpedance, LO port selected
20
LO Input Return LossRF and IF terminated into matchedimpedance, LO port unselected
20
dB
IF Terminal Output Impedance ZIFNominal differential impedance at the IC’sIF output
200 Ω
IF Return LossRF terminated in 50Ω; transformed to 50Ω using external components shown in theTypical Application Circuit
18 dB
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)(Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm,PRF = -5dBm, fRF = 700MHz to 1000MHz, fLO = 900MHz to 1200MHz, fIF = 200MHz, fRF < fLO, TC = -40°C to +85°C. Typical valuesare at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF =900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, all parameters are guaran-teed by design and characterization, unless otherwise noted.) (Note 6)
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
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+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS(Typical Application Circuit, RF and LO ports are driven from 50Ω sources. Typical values are at VCC = +3.3V, PRF = -5dBm,PLO = 0dBm, fRF = 900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Power Gain GC 8.7 dB
Conversion Power Gain Variationvs. Frequency
ΔGC
Flatness over any one of three frequencybands: fRF = 824MHz to 849MHz, fRF = 869MHz to 894MHz, fRF = 880MHz to 915MHz
0.15 dB
G ai n V ar i ati on Over Tem p er atur e TCG TC = -40°C to +85°C -0.012 dB/°C
Noise Figure NF 9.0 dB
Noise Figure TemperatureCoefficient
TCNF TC = -40°C to +85°C 0.018 dB/°C
Input 1dB Compression Point IP1dB 10.6 dBm
Third-Order Input Intercept Point IIP3fRF1 = 900MHz, fRF2 = 901MHz,fIF = 200MHz, PRF = -5dBm/tone
24.7 dBm
PRF = -10dBm -74.92LO-2RF Spur Rejection 2 x 2
fRF = 800MHz,fLO = 1000MHz,fSPUR = 900MHz PRF = -5dBm -69.9
dBc
PRF = -10dBm -783LO-3RF Spur Rejection 3 x 3
fRF = 800MHz,fLO = 1000MHz,fSPUR = 933.333MHz PRF = -5dBm -73
dBc
Maximum LO Leakage at RF Port fLO = 900MHz to 1300MHz, PLO = +3dBm -40 dBm
M axi m um 2LO Leakag e at RF P or t fLO = 900MHz to 1300MHz, PLO = +3dBm -42 dBm
Maximum LO Leakage at IF Port fLO = 900MHz to 1300MHz, PLO = +3dBm -34 dBm
Minimum RF-to-IF Isolation fRF = 824MHz to 915MHz 38 dB
LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm,fLO1 = 900MHz, fLO2 = 901MHz (Note 8)
45 dB
Channel-to-Channel IsolationRFM AIN ( RFD IV ) conver ted p ow er m easur ed at IFD IV ( IFM AIN ) , r el ati ve to IFM AIN ( IFD IV ) ,al l unused p or ts ter m i nated to 50Ω
48 dB
LO Switching Time 50% of LOS E L to IF settl ed w i thi n 2 d eg r ees 50 ns
RF Input Impedance ZRF 50 Ω
RF Input Return LossLO on and IF terminated into matchedimpedance
21 dB
LO Input Impedance ZLO 50 Ω
RF and IF terminated into matchedimpedance, LO port selected
31
LO Input Return LossRF and IF terminated into matchedimpedance, LO port unselected
24
dB
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
6 _______________________________________________________________________________________
Note 5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. Seethe Typical Operating Characteristics. Performance is optimized for RF frequencies of 824MHz to 915MHz.
Note 6: All limits reflect losses of external components. Output measurements taken at IF outputs of Typical Application Circuit.Note 7: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer including the LO noise, as defined in the Application Note 2021: Specifications andMeasurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
Note 8: Measured at IF port at IF frequency. LOSEL may be in any logic state.Note 9: Limited production testing.Note 10: Guaranteed by production testing.
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)(Typical Application Circuit, RF and LO ports are driven from 50Ω sources. Typical values are at VCC = +3.3V, PRF = -5dBm,PLO = 0dBm, fRF = 900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
IF Terminal Output Impedance ZIFNominal differential impedance at the IC’sIF output
200 Ω
IF Output Return LossRF terminated in 50Ω; transformed to 50Ωusing external components shown in theTypical Application Circuit
17 dB
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________ 7
Typical Operating Characteristics(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX
1998
5A to
c01
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
900800
7
8
9
10
11
6700 1000
TC = +85°CTC = +25°C
TC = -30°C
CONVERSION GAIN vs. RF FREQUENCY
MAX
1998
5A to
c02
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
900800
7
8
9
10
11
6700 1000
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCY
MAX
1998
5A to
c03
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
900800
7
8
9
10
11
6700 1000
VCC = 4.75V, 5.0V, 5.25V
INPUT IP3 vs. RF FREQUENCY
MAX
1998
5A to
c04
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
900800
23
24
25
26
27
22700 1000
TC = +85°C
TC = +25°C
TC = -30°C
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCYM
AX19
985A
toc0
5
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
900800
23
24
25
26
27
22700 1000
PLO = +3dBm, 0dBm PLO = -3dBm
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCY
MAX
1998
5A to
c06
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
900800
23
24
25
26
27
22700 1000
VCC = 5.0V
VCC = 5.25V
VCC = 4.75V
PRF = -5dBm/TONE
NOISE FIGURE vs. RF FREQUENCY
MAX
1998
5A to
c07
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
900800
7
6
8
9
10
11
12
5700 1000
TC = +85°C
TC = +25°CTC = -30°C
NOISE FIGURE vs. RF FREQUENCY
MAX
1998
5A to
c08
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
900800
7
6
8
9
10
11
12
5700 1000
PLO = -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCYM
AX19
985A
toc0
9
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
900800
7
6
8
9
10
11
12
5700 1000
VCC = 4.75V, 5.0V, 5.25V
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
8 _______________________________________________________________________________________
2LO-2RF RESPONSE vs. RF FREQUENCY
MAX
1998
5A to
c10
RF FREQUENCY (MHz)
2LO-
2RF
RESP
ONSE
(dBc
)
900800
55
60
65
70
75
80
50700 1000
TC = +85°CPRF = -5dBm
TC = +25°C
TC = -30°C
2LO-2RF RESPONSE vs. RF FREQUENCY
MAX
1998
5A to
c11
RF FREQUENCY (MHz)
2LO-
2RF
RESP
ONSE
(dBc
)
900800
55
60
65
70
75
80
50700 1000
PLO = 0dBm
PLO = +3dBm
PLO = -3dBm
PRF = -5dBm
2LO-2RF RESPONSE vs. RF FREQUENCY
MAX
1998
5A to
c12
RF FREQUENCY (MHz)
2LO-
2RF
RESP
ONSE
(dBc
)
900800
55
60
65
70
75
80
50700 1000
PRF = -5dBm
VCC = 4.75V, 5.0V, 5.25V
3LO-3RF RESPONSE vs. RF FREQUENCY
MAX
1998
5A to
c13
RF FREQUENCY (MHz)
3LO-
3RF
RESP
ONSE
(dBc
)
900800
65
75
85
95
55700 1000
PRF = -5dBm
TC = +85°CTC = +25°C
TC = -30°C
3LO-3RF RESPONSE vs. RF FREQUENCYM
AX19
985A
toc1
4
RF FREQUENCY (MHz)
3LO-
3RF
RESP
ONSE
(dBc
)
900800
65
75
85
95
55700 1000
PRF = -5dBm
PLO = -3dBm, 0dBm, +3dBm
3LO-3RF RESPONSE vs. RF FREQUENCY
MAX
1998
5A to
c15
RF FREQUENCY (MHz)
3LO-
3RF
RESP
ONSE
(dBc
)
900800
65
75
85
95
55700 1000
PRF = -5dBm
VCC = 4.75V, 5.0V, 5.25V
INPUT P1dB vs. RF FREQUENCY
MAX
1998
5A to
c16
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
900800
11
13
12
14
15
10700 1000
TC = +85°C
TC = +25°C
TC = -30°C
INPUT P1dB vs. RF FREQUENCY
MAX
1998
5A to
c17
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
900800
11
13
12
14
15
10700 1000
PLO = -3dBm, 0dBm, +3dBm
INPUT P1dB vs. RF FREQUENCYM
AX19
985A
toc1
8
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
900800
11
13
12
14
15
10700 1000
VCC = 5.0V
VCC = 5.25V
VCC = 4.75V
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________ 9
CHANNEL ISOLATION vs. RF FREQUENCY
MAX
1998
5A to
c19
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
900800
40
35
50
45
55
60
30700 1000
TC = -30°C, +25°C, +85°C
CHANNEL ISOLATION vs. RF FREQUENCY
MAX
1998
5A to
c20
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
900800
40
35
50
45
55
60
30700 1000
PLO = -3dBm, 0dBm, +3dBm
CHANNEL ISOLATION vs. RF FREQUENCY
MAX
1998
5A to
c21
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
900800
40
35
50
45
55
60
30700 1000
VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT IF PORTvs. LO FREQUENCY
MAX
1998
5A to
c22
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
1100 11501000 1050950
-40
-45
-30
-35
-25
-20
-50900 1200
TC = -30°C
TC = +25°C, +85°C
LO LEAKAGE AT IF PORTvs. LO FREQUENCY
MAX
1998
5A to
c23
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
1150110010501000950
-45
-40
-35
-30
-25
-20
-50900 1200
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
LO LEAKAGE AT IF PORTvs. LO FREQUENCY
MAX
1998
5A to
c24
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
1150110010501000950
-45
-40
-35
-30
-25
-20
-50900 1200
VCC = 4.75V, 5.0V, 5.25V
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c25
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
800 900
45
40
35
50
30700 1000
TC = +85°C
TC = -30°C TC = +25°C
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c26
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
800 900
45
40
35
50
30700 1000
PLO = -3dBm, 0dBm, +3dBm
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c27
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
800 900
45
40
35
50
30700 1000
VCC = 4.75V, 5.0V, 5.25V
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
MA
X1
99
85
A
Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
10 ______________________________________________________________________________________
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c28
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
800 900 11001000
-60
-50
-40
-30
-20
-70700 1200
TC = -30°C
TC = +85°C
TC = +25°C
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c29
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
800 900 11001000
-60
-50
-40
-30
-20
-70700 1200
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c30
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
800 900 11001000
-60
-50
-40
-30
-20
-70700 1200
VCC = 4.75V, 5.0V, 5.25V
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c31
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
800 900 11001000
-50
-40
-30
-20
-10
-60700 1200
TC = -30°C, +25°C, +85°C
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c32
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
800 900 11001000
-50
-40
-30
-20
-10
-60700 1200
PLO = -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c33
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
800 900 11001000
-50
-40
-30
-20
-10
-60700 1200
VCC = 4.75V, 5.0V, 5.25V
LO SWITCH ISOLATIONvs. LO FREQUENCY
MAX
1998
5A to
c34
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
1100 1300
45
40
35
50
30900 15001000 1200 1400
TC = +85°C
TC = -30°C
TC = +25°C
LO SWITCH ISOLATIONvs. LO FREQUENCY
MAX
1998
5A to
c35
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
1100 1300
45
40
35
50
30900 15001000 1200 1400
PLO = +3dBm
PLO = -3dBm, 0dBm
LO SWITCH ISOLATIONvs. LO FREQUENCY
MAX
1998
5A to
c36
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
1100 1300
45
40
35
50
30900 15001000 1200 1400
VCC = 4.75V, 5.0V, 5.25V
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
3LO-3RF RESPONSE vs. RF FREQUENCY(VARIOUS LO AND IF BIAS)
MAX
1998
5A to
c45
RF FREQUENCY (MHz)
3LO-
3RF
RESP
ONSE
(dBc
)
900800
60
65
55
75
50
70
80
85
45700 1000
SEE TABLE 1 FOR RESISTOR AND ICC VALUES
1, 2, 3, 4 PRF = -5dBm
5
7 6
2LO-2RF RESPONSE vs. RF FREQUENCY(VARIOUS LO AND IF BIAS)
MAX
1998
5A to
c44
RF FREQUENCY (MHz)
2LO-
2RF
RESP
ONSE
(dBc
)
900800
60
65
55
70
75
80
50700 1000
SEE TABLE 1 FOR RESISTOR AND ICC VALUES
2, 3, 41 PRF = -5dBm
57
6
LO SELECTED RETURN LOSSvs. LO FREQUENCY
MAX
1998
5A to
c39
LO FREQUENCY (MHz)
LO S
ELEC
TED
RETU
RN L
OSS
(dB)
11001000850
40
30
20
10
0
50700 1300
PLO = +3dBmPLO = 0dBm
PLO = -3dBm
MA
X1
99
85
A
Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________ 11
RF PORT RETURN LOSSvs. RF FREQUENCY
MAX
1998
5A to
c37
RF FREQUENCY (MHz)
RF P
ORT
RETU
RN L
OSS
(dB)
900 950800750 850
25
20
15
10
5
0
30700 1000
PLO = -3dBm, 0dBm, +3dBm
IF = 200MHz
IF PORT RETURN LOSSvs. IF FREQUENCY
MAX
1998
5A to
c38
IF FREQUENCY (MHz)
IF P
ORT
RETU
RN L
OSS
(dB)
140 230 320 410
25
20
15
10
5
0
3050 500
LO = 900MHz
VCC = 4.75V, 5.0V, 5.25V
IF RETURN LOSS DEPENDS ONEXTERNAL IF COMPONENTS
LO UNSELECTED RETURN LOSSvs. LO FREQUENCY
MAX
1998
5A to
c40
LO FREQUENCY (MHz)
LO U
NSEL
ECTE
D RE
TURN
LOS
S (d
B)
11001000850
40
30
20
10
0
50700 1300
PLO = -3dBm, 0dBm, +3dBm
SUPPLY CURRENTvs. TEMPERATURE (TC)
MAX
1998
5A to
c41
TEMPERATURE (°C)
SUPP
LY C
URRE
NT (m
A)
-15 25 455 65
290
310
330
350
370
270-35 85
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
CONVERSION GAIN vs. RF FREQUENCY(VARIOUS LO AND IF BIAS)
MAX
1998
5A to
c42
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
900800
7
8
9
10
11
6700 1000
SEE TABLE 1 FOR RESISTOR AND ICC VALUES
1, 2, 3, 4
75
6
INPUT IP3 vs. RF FREQUENCY(VARIOUS LO AND IF BIAS)
MAX
1998
5A to
c43
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
900800
20
22
16
18
24
26
28
14700 1000
SEE TABLE 1 FOR RESISTOR AND ICC VALUES
2, 3, 41 1
45
7
6
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
MA
X1
99
85
A
Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
12 ______________________________________________________________________________________
INPUT P1dB vs. RF FREQUENCY(VARIOUS LO AND IF BIAS)
MAX
1998
5A to
c46
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
900800
10
8
14
6
12
16
4700 1000
SEE TABLE 1 FOR RESISTOR AND ICC VALUES
1, 2, 3, 4
57 6
CONVERSION GAIN vs. RF FREQUENCY(VARIOUS VALUES OF L3 AND L6)
MAX
1998
5A to
c47
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
900
L = L3 = L6
800
8
7
10
9
11
6700 1000
L = 0Ω, 7.5nH, 15nH, 30nH
INPUT IP3 vs. RF FREQUENCY(VARIOUS VALUES OF L3 AND L6)
MAX
1998
5A to
c48
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
900
L = L3 = L6
800
24
23
26
25
27
22700 1000
L = 0Ω, 7.5nH, 15nH
L = 30nH
2LO-2RF RESPONSE vs. RF FREQUENCY(VARIOUS VALUES OF L3 AND L6)
MAX
1998
5A to
c49
RF FREQUENCY (MHz)
2LO-
2RF
RESP
ONSE
(dBc
)
900
PRF = -5dBmL = L3 = L6
800
65
60
55
75
70
80
50700 1000
L = 30nH
L = 7.5nH L = 15nH
L = 0Ω
3LO-3RF RESPONSE vs. RF FREQUENCY(VARIOUS VALUES OF L3 AND L6)
MAX
1998
5A to
c50
RF FREQUENCY (MHz)
3LO-
3RF
RESP
ONSE
(dBc
)
900
PRF = -5dBmL = L3 = L6
800
75
65
85
95
55700 1000
L = 0Ω, 7.5nH, 15nH, 30nH
LO LEAKAGE AT IF PORT vs. LO FREQUENCY(VARIOUS VALUES OF L3 AND L6)
MAX
1998
5A to
c51
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
11001000
-20
-30
-10
-50
-60
-40
0
-70900 12001050950 1150
L = 0Ω
L = 7.5nH
L = 30nH
L = 15nH
L = L3 = L6
RF-TO-IF ISOLATION vs. RF FREQUENCY(VARIOUS VALUES OF L3 AND L6)
MAX
1998
5A to
c52
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
900800
40
20
10
30
50
0700 1000
L = 0Ω
L = 7.5nH
L = 30nH L = 15nH L = L3 = L6
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
MA
X1
99
85
A
Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________ 13
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
CONVERSION GAINvs. RF FREQUENCY
MAX
1998
5A to
c53
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
900800
10
8
7
9
11
6700 1000
TC = +85°C
TC = -30°C
TC = +25°C
VCC = 3.3V
CONVERSION GAINvs. RF FREQUENCY
MAX
1998
5A to
c54
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
800 900
7
8
9
10
11
6700 1000
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
CONVERSION GAINvs. RF FREQUENCY
MAX
1998
5A to
c55
RF FREQUENCY (MHz)
CONV
ERSI
ON G
AIN
(dB)
800 900
7
8
9
10
11
6700 1000
VCC = 3.0V, 3.3V, 3.6V
INPUT IP3 vs. RF FREQUENCY
MAX
1998
5A to
c56
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
900800
25
23
22
24
26
21700 1000
TC = +85°C
TC = -30°C
TC = +25°C
VCC = 3.3VPRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCYM
AX19
985A
toc5
7
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
900800
25
23
22
24
26
21700 1000
PLO = +3dBm
PLO = -3dBm
PLO = 0dBm
VCC = 3.3VPRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCY
MAX
1998
5A to
c58
RF FREQUENCY (MHz)
INPU
T IP
3 (d
Bm)
900800
25
23
22
24
26
21700 1000
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
PRF = -5dBm/TONE
NOISE FIGUREvs. RF FREQUENCY
MAX
1998
5A to
c59
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
900800
11
8
7
10
6
9
12
5700 1000
TC = +85°C
TC = -30°CTC = +25°C
VCC = 3.3V
NOISE FIGUREvs. RF FREQUENCY
MAX
1998
5A to
c60
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
900800
11
8
7
10
6
9
12
5700 1000
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
NOISE FIGUREvs. RF FREQUENCY
MAX
1998
5A to
c61
RF FREQUENCY (MHz)
NOIS
E FI
GURE
(dB)
900800
11
8
7
10
6
9
12
5700 1000
VCC = 3.0V, 3.3V, 3.6V
MA
X1
99
85
A
Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
14 ______________________________________________________________________________________
2LO-2RF RESPONSEvs. RF FREQUENCY
MAX
1998
5A to
c62
RF FREQUENCY (MHz)
2LO-
2RF
RESP
ONSE
(dBc
)
900800
75
60
55
70
65
80
50700 1000
TC = +85°C
PRF = -5dBm
TC = -30°CTC = +25°C
VCC = 3.3V
2LO-2RF RESPONSEvs. RF FREQUENCY
MAX
1998
5A to
c63
RF FREQUENCY (MHz)
2LO-
2RF
RESP
ONSE
(dBc
)
900800
75
60
55
70
65
80
50700 1000
PRF = -5dBm
PLO = +3dBm
PLO = -3dBm
PLO = 0dBm
VCC = 3.3V
2LO-2RF RESPONSEvs. RF FREQUENCY
MAX
1998
5A to
c64
RF FREQUENCY (MHz)
2LO-
2RF
RESP
ONSE
(dBc
)
900800
75
60
55
70
65
80
50700 1000
PRF = -5dBm
VCC = 3.0V, 3.3V, 3.6V
3LO-3RF RESPONSEvs. RF FREQUENCY
MAX
1998
5A to
c65
RF FREQUENCY (MHz)
3LO-
3RF
RESP
ONSE
(dBc
)
900800
65
85
75
95
55700 1000
TC = +85°C
PRF = -5dBm
TC = -30°C
TC = +25°C
VCC = 3.3V
3LO-3RF RESPONSEvs. RF FREQUENCY
MAX
1998
5A to
c66
RF FREQUENCY (MHz)
3LO-
3RF
RESP
ONSE
(dBc
)
900800
65
85
75
95
55700 1000
PRF = -5dBm
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
3LO-3RF RESPONSEvs. RF FREQUENCY
MAX
1998
5A to
c67
RF FREQUENCY (MHz)
3LO-
3RF
RESP
ONSE
(dBc
)
900800
65
85
75
95
55700 1000
PRF = -5dBm
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
INPUT P1dB vs. RF FREQUENCY
MAX
1998
5A to
c68
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
900800
9
12
8
11
10
13
7700 1000
TC = +85°C
TC = -30°C
TC = +25°C
VCC = 3.3V
INPUT P1dB vs. RF FREQUENCY
MAX
1998
5A to
c69
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
900800
9
12
8
11
10
13
7700 1000
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
INPUT P1dB vs. RF FREQUENCYM
AX19
985A
toc7
0
RF FREQUENCY (MHz)
INPU
T P 1
dB (d
Bm)
900800
9
12
8
11
10
13
7700 1000
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
MA
X1
99
85
A
Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________ 15
CHANNEL ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c71
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
900800
40
55
35
50
45
60
30700 1000
TC = -30°C, +25°C, +85°C
VCC = 3.3V
CHANNEL ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c72
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
900800
40
55
35
50
45
60
30700 1000
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
CHANNEL ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c73
RF FREQUENCY (MHz)
CHAN
NEL
ISOL
ATIO
N (d
B)
900800
40
55
35
50
45
60
30700 1000
VCC = 3.0V, 3.3V, 3.6V
LO LEAKAGE AT IF PORTvs. LO FREQUENCY
MAX
1998
5A to
c74
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
11001000
-40
-25
-45
-30
-35
-20
-50900 12001050950 1150
TC = +85°C
TC = -30°C
TC = +25°C
VCC = 3.3V
LO LEAKAGE AT IF PORTvs. LO FREQUENCY
MAX
1998
5A to
c75
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
11001000
-40
-25
-45
-30
-35
-20
-50900 12001050950 1150
PLO = +3dBm
PLO = -3dBm
PLO = 0dBm
VCC = 3.3V
LO LEAKAGE AT IF PORTvs. LO FREQUENCY
MAX
1998
5A to
c76
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T IF
POR
T (d
Bm)
11001000
-40
-25
-45
-30
-35
-20
-50900 12001050950 1150
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c77
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
900800
45
35
40
50
30700 1000
TC = +85°C
TC = -30°CTC = +25°C
VCC = 3.3V
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c78
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
900800
45
35
40
50
30700 1000
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
RF-TO-IF ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c79
RF FREQUENCY (MHz)
RF-T
O-IF
ISOL
ATIO
N (d
B)
900800
45
35
40
50
30700 1000
VCC = 3.0V, 3.3V, 3.6V
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
MA
X1
99
85
A
Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
16 ______________________________________________________________________________________
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c80
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
800 1000900 1100
-30
-50
-40
-20
-60700 1200
TC = +85°C
TC = -30°C TC = +25°C
VCC = 3.3V
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c81
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
800 1000900 1100
-30
-50
-40
-20
-60700 1200
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c82
LO FREQUENCY (MHz)
LO L
EAKA
GE A
T RF
POR
T (d
Bm)
800 1000900 1100
-30
-50
-40
-20
-60700 1200
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c83
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
800 1000900 1100
-30
-20
-50
-40
-10
-60700 1200
TC = -30°C, +25°C, +85°C
VCC = 3.3V
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c84
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
800 1000900 1100
-30
-20
-50
-40
-10
-60700 1200
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
2LO LEAKAGE AT RF PORTvs. LO FREQUENCY
MAX
1998
5A to
c85
LO FREQUENCY (MHz)
2LO
LEAK
AGE
AT R
F PO
RT (d
Bm)
800 1000900 1100
-30
-20
-50
-40
-10
-60700 1200
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
LO SWITCH ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c86
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
13001000 1200 14001100
45
35
40
50
30900 1500
TC = -30°C
TC = +25°CTC = +85°C
VCC = 3.3V
LO SWITCH ISOLATIONvs. RF FREQUENCY
MAX
1998
5A to
c87
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
13001000 1200 14001100
45
35
40
50
30900 1500
PLO = -3dBm, 0dBm
PLO = +3dBm
VCC = 3.3V
LO SWITCH ISOLATIONvs. LO FREQUENCY
MAX
1998
5A to
c88
LO FREQUENCY (MHz)
LO S
WIT
CH IS
OLAT
ION
(dB)
13001000 1200 14001100
45
35
40
50
30900 1500
VCC = 3.0V, 3.3V, 3.6V
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
Table 1. DC Current vs. Bias ResistorSettings
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______________________________________________________________________________________ 17
RF PORT RETURN LOSSvs. RF FREQUENCY
MAX
1998
5A to
c89
RF FREQUENCY (MHz)
RF P
ORT
RETU
RN L
OSS
(dB)
900750 850 950800
5
20
10
25
15
0
30700 1000
PLO = -3dBm, 0dBm, +3dBm
IF = 200MHzVCC = 3.3V
IF PORT RETURN LOSSvs. IF FREQUENCY
MAX
1998
5A to
c90
IF FREQUENCY (MHz)
IF P
ORT
RETU
RN L
OSS
(dB)
140 230 410
5
20
10
25
15
0
3050 500320
LO = 900MHz
VCC = 3.0V, 3.3V, 3.6V
IF RETURN LOSS DEPENDS ONEXTERNAL COMPONENTS
LO SELECTED RETURN LOSSvs. LO FREQUENCY
MAX
1998
5A to
c91
LO FREQUENCY (MHz)
LO S
ELEC
TED
RETU
RN L
OSS
(dB)
1150
30
40
10
20
0
50700 13001000850
PLO = +3dBm
PLO = -3dBm
PLO = 0dBm
VCC = 3.3V
LO UNSELECTED RETURN LOSSvs. LO FREQUENCY
MAX
1998
5A to
c92
LO FREQUENCY (MHz)
LO U
NSEL
ECTE
D RE
TURN
LOS
S (d
B)
1150
30
40
10
20
0
50700 13001000850
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
SUPPLY CURRENTvs. TEMPERATURE (TC)
MAX
1998
5A to
c93
TEMPERATURE (°C)
SUPP
LY C
URRE
NT (m
A)
455
320
280
260
240
220
300
340
200-35 8525-15 65
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unlessotherwise noted.)
BIASCONDITION
D C CU R R EN T ( m A )
R1 AND R4VALUES (Ω)
R2 AND R5VALUES (Ω)
1 359.4 698 800
2 331.8 698 1100
3 322.8 698 1200
4 311.7 698 1400
5 268.2 1100 1200
6 244.4 1400 1200
7 223.7 1820 1200
Note: See TOCs 42–46 for performance trade-offs vs. DC biascondition.
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18 ______________________________________________________________________________________
Pin DescriptionPIN NAME FUNCTION
1 RFMAINMain Channel RF input. Internally matched to 50Ω. Requires an input DC-blockingcapacitor.
2 TAPMAINMain Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors asclose as possible to the pin with the smaller value capacitor closer to the part.
3, 5, 7, 12, 20, 22,24, 25, 26, 34
GND Ground
4, 6, 10, 16, 21,30, 36
VCCPower Supply. Bypass to GND with 0.01µF capacitors as close as possible to the pin. Pins4 and 6 do not require bypass capacitors.
8 TAPDIVDiversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors asclose as possible to the pin with the smaller value capacitor closer to the part.
9 RFDIVDiversity Channel RF Input. Internally matched to 50Ω. Requires an input DC-blockingcapacitor.
11 IFDBIASIF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the biascurrent for the diversity IF amplifier (see the Typical Operating Characteristics for typicalperformance vs. resistor value).
13, 14 IFD+, IFD-Diversity Mixer Differential IF Outputs. Connect pullup inductors from each of these pins toVCC (see the Typical Application Circuit).
15 LEXTDDiversity External Inductor Connection. Connect a parallel combination of an inductor anda 500Ω resistor from this pin to ground to increase the RF-to-IF and LO-to-IF isolation (seethe Typical Operating Characteristics for typical performance vs. inductor value).
17 LODBIASLO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set thebias current for the diversity LO amplifier (see the Typical Operating Characteristics fortypical performance vs. resistor value).
18, 28 N.C. No Connection. Not internally connected.
19 LO1Local Oscillator 1 Input. This input is internally matched to 50Ω. Requires an input DC-blocking capacitor.
23 LOSEL Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.
27 LO2Local Oscillator 2 Input. This input is internally matched to 50Ω. Requires an input DC-blocking capacitor.
29 LOMBIASLO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the biascurrent for the main LO amplifier (see the Typical Operating Characteristics for typicalperformance vs. resistor value).
31 LEXTMMain External Inductor Connection. Connect a parallel combination of an inductor and a500Ω resistor from this pin to ground to increase the RF-to-IF and LO-to-IF isolation (seeTypical Operating Characteristics for typical performance vs. inductor value).
32, 33 IFM-, IFM+Main Mixer Differential IF Outputs. Connect pullup inductors from each of these pins to VCC(see the Typical Application Circuit).
35 IFMBIASIF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the biascurrent for the main IF amplifier (see the Typical Operating Characteristics for typicalperformance vs. resistor value).
— EPExposed Pad. Internally connected to GND. Connect to a large ground plane usingmultiple vias to maximize thermal and RF performance.
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______________________________________________________________________________________ 19
Detailed DescriptionThe MAX19985A is a dual-channel downconverterdesigned to provide 8.7dB of conversion gain,+25.5dBm of IIP3, +12.6dBm typical input 1dB com-pression point, and a 9.0dB noise figure.
In addition to its high-linearity performance, theMAX19985A achieves a high level of component inte-gration. The device integrates two double-balancedmixers for two-channel downconversion. Both the mainand diversity channels include a balun and matchingcircuitry to allow 50Ω single-ended interfaces to the RFports and the two LO ports. An integrated single-pole/double-throw (SPDT) switch provides 50ns switchingtime between the two LO inputs with 46dB of LO-to-LOisolation and -40dBm of LO leakage at the RF port.Furthermore, the integrated LO buffers provide a highdrive level to each mixer core, reducing the LO driverequired at the MAX19985A’s inputs to a range of-3dBm to +3dBm. The IF ports for both channels incor-porate differential outputs for downconversion, which isideal for providing enhanced 2LO-2RF performance.
Specifications are guaranteed over broad frequencyranges to allow for use in WCDMA, GSM/EDGE, iDEN,cdma2000, and LTE/WiMAX cellular and 700MHz bandbase stations. The MAX19985A is specified to operateover an RF input range of 700MHz to 1000MHz, an LOrange of 900MHz to 1300MHz, and an IF range of50MHz to 500MHz. The external IF components set thelower frequency range (see the Typical OperatingCharacteristics for details). Operation beyond theseranges is possible (see the Typical OperatingCharacteristics for additional information). Although thisdevice is optimized for high-side LO injection applica-tions, it can operate in low-side LO injection modes aswell. However, performance degrades as fLO continuesto decrease. For increased low-side LO performance,refer to the MAX19985 data sheet.
RF Port and BalunThe RF input ports of both the main and diversity chan-nels are internally matched to 50Ω, requiring no exter-nal matching components. A DC-blocking capacitor isrequired as the input is internally DC shorted to groundthrough the on-chip balun. The RF port input return lossis typically 20dB over the RF frequency range of770MHz to 915MHz.
LO Inputs, Buffer, and BalunThe MAX19985A is optimized for a 900MHz to1300MHz LO frequency range. As an added feature,the MAX19985A includes an internal LO SPDT switchfor use in frequency-hopping applications. The switchselects one of the two single-ended LO ports, allowingthe external oscillator to settle on a particular frequencybefore it is switched in. LO switching time is typically50ns, which is more than adequate for typical GSMapplications. If frequency hopping is not employed,simply set the switch to either of the LO inputs. Theswitch is controlled by a digital input (LOSEL), wherelogic-high selects LO1 and logic-low selects LO2. LO1and LO2 inputs are internally matched to 50Ω, requiringonly an 82pF DC-blocking capacitor. To avoid damageto the part, voltage MUST be applied to VCC beforedigital logic is applied to LOSEL. Alternatively, a 1kΩresistor can be placed in series at the LOSEL to limitthe input current in applications where LOSEL isapplied before VCC.
The main and diversity channels incorporate a two-stage LO buffer that allows for a wide-input powerrange for the LO drive. The on-chip low-loss baluns,along with LO buffers, drive the double-balanced mix-ers. All interfacing and matching components from theLO inputs to the IF outputs are integrated on-chip.
High-Linearity MixerThe core of the MAX19985A dual-channel downcon-verter consists of two double-balanced, high-performance passive mixers. Exceptional linearity isprovided by the large LO swing from the on-chip LObuffers. When combined with the integrated IF ampli-fiers, the cascaded IIP3, 2LO-2RF rejection, and noisefigure performance are typically +25.5dBm, 76dBc,and 9.0dB, respectively.
Differential IFThe MAX19985A has an IF frequency range of 50MHzto 500MHz, where the low-end frequency depends onthe frequency response of the external IF components.Note that these differential ports are ideal for providingenhanced IIP2 performance. Single-ended IF applica-tions require a 4:1 (impedance ratio) balun to transformthe 200Ω differential IF impedance to a 50Ω single-ended system. After the balun, the return loss istypically 18dB. The user can use a differential IF ampli-fier on the mixer IF ports, but a DC block is required onboth IFD+/IFD- and IFM+/IFM- ports to keep externalDC from entering the IF ports of the mixer.
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20 ______________________________________________________________________________________
Applications InformationInput and Output Matching
The RF and LO inputs are internally matched to 50Ω. Nomatching components are required. The RF port inputreturn loss is typically 20dB over the RF frequency rangeof 770MHz to 915MHz and return loss at the LO ports aretypically 20dB over the entire LO range. RF and LO inputsrequire only DC-blocking capacitors for interfacing.
The IF output impedance is 200Ω (differential). Forevaluation, an external low-loss 4:1 (impedance ratio)balun transforms this impedance to a 50Ω single-endedoutput (see the Typical Application Circuit).
Externally Adjustable BiasEach channel of the MAX19985A has two pins (LO_BIAS,IF_BIAS) that allow external resistors to set the internalbias currents. Nominal values for these resistors are givenin Table 2. Larger-value resistors can be used to reducepower dissipation at the expense of some performanceloss. See the Typical Operating Characteristics to evaluatethe power vs. performance tradeoff. If ±1% resistors arenot readily available, ±5% resistors can be substituted.
LEXT_ InductorsFor applications requiring optimum RF-to-IF and LO-to-IF isolation, connect a parallel combination of a low-ESR inductor and a 500Ω resistor from LEXT_ (pins 15and 31) to ground. When improved isolation is notrequired, connect LEXT_ to ground using a 0Ω resis-tance. See the Typical Operating Characteristics toevaluate the isolation vs. inductor value tradeoff.
Layout ConsiderationsA properly designed PCB is an essential part of anyRF/microwave circuit. Keep RF signal lines as short aspossible to reduce losses, radiation, and inductance.The load impedance presented to the mixer must be sothat any capacitance from both IF- and IF+ to grounddoes not exceed several picofarads. For the best perfor-mance, route the ground pin traces directly to theexposed pad under the package. The PCB exposedpad MUST be connected to the ground plane of thePCB. It is suggested that multiple vias be used to con-nect this pad to the lower-level ground planes. Thismethod provides a good RF/thermal-conduction path forthe device. Solder the exposed pad on the bottom of the
Table 2. Component ValuesCOMPONENT VALUE DESCRIPTION
C1, C2, C7, C8 39pF Microwave capacitors (0402)
C3, C6 0.033µF Microwave capacitors (0603)
C4, C5 — Not used
C9, C13, C15, C17, C18 0.01µF Microwave capacitors (0402)
C10, C11, C12, C19, C20, C21 150pF Microwave capacitors (0603)
C14, C16 82pF Microwave capacitors (0402)
L1, L2, L4, L5 330nH Wire-wound high-Q inductors (0805)
L3, L6 30nHWire-wound high-Q inductors (0603). Smaller values can be used at the expense ofsome performance loss (see the Typical Operating Characteristics).
R1, R4 698Ω ±1% resistors (0402). Larger values can be used to reduce power at the expense ofsome performance loss (see the Typical Operating Characteristics).
1.2kΩ±1% resistors (0402). Use for VCC = +5.0V applications. Larger values can be usedto reduce power at the expense of some performance loss (see the TypicalOperating Characteristics).R2, R5
600Ω ±1% resistors (0402). Use for VCC = +3.3V applications.
R3, R6 0Ω ±1% resistors (1206)
R7, R8 500Ω ±1% resistors (0402)
T1, T2 4:1Transformers (200:50)Mini-Circuits TC4-1W-7A
U1 — MAX19985A IC
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________ 21
device package to the PCB. The MAX19985A evaluationkit can be used as a reference for board layout. Gerberfiles are available upon request at www.maxim-ic.com.
Power-Supply BypassingProper voltage-supply bypassing is essential for high-frequency circuit stability. Bypass each VCC pin andTAPMAIN/TAPDIV with the capacitors shown in theTypical Application Circuit (see Table 2 for componentvalues). Place the TAPMAIN/TAPDIV bypass capacitorsto ground within 100 mils of the pin.
Exposed Pad RF/Thermal ConsiderationsThe exposed pad (EP) of the MAX19985A’s 36-pin thinQFN-EP package provides a low thermal-resistancepath to the die. It is important that the PCB on which theMAX19985A is mounted be designed to conduct heatfrom the EP. In addition, provide the EP with a low-inductance path to electrical ground. The EP MUST besoldered to a ground plane on the PCB, either directlyor through an array of plated via holes.
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22 ______________________________________________________________________________________
Typical Application Circuit
MAX19985A
5
6
4
3
23
22
24
IFDB
IAS
IFD+ IFD-
LEXT
D
V CC
25
V CC
IFM
BIAS
IFM
+
IFM
-
V CC
LEXT
M
LOM
BIAS
10 11
VCC
13 14 15 16
3536 34 32 31 30
GND
VCC
GND
GND
LOSEL
GND
GND
GND
12
33
7 21GND
GNDC15
9 19RFDIV LO1
VCC
8 20TAPDIV
GND
2 26GND
R1
TAPMAIN
1 27LO2
LO1
LO2
+
N.C.
N.C.
18
28V C
C
LODB
IAS
17
29
RFMAIN
L3
L2
L1
EXPOSEDPAD
C16
C20
C19
C21
LOSELECT
IF MAINOUTPUT
IF DIVOUTPUT
C14
VCC
RF DIVINPUT
RF MAININPUT
C1
C8
C3 C2
C4
VCC
C5
VCC
C6 C7
C18
VCC
VCC
C17
VCC
R2
T1
4:1
R3
R4
L5
L4C10
C11
C12
C9
VCC
VCC
C13
VCC
R5
T2
4:1
R6
L6 R8
R7
U1
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Dual, SiGe, High-Linearity, 700MHz to 1000MHzDownconversion Mixer with LO Buffer/Switch
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses areimplied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 23
© 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.
Pin Configuration/Functional Diagram
MAX19985A
THIN QFN-EP6mm x 6mm
TOP VIEW (WITHEXPOSED PAD ON
THE BOTTOM OF THEPACKAGE)
5
6
4
3
23
22
24
IFDB
IAS
IFD+ IFD-
LEXT
D
V CC
25
V CC
IFM
BIAS
IFM
+
IFM
-
V CC
LEXT
M
LOM
BIAS
10 11
VCC
13 14 15 16
3536 34 32 31 30
GND
VCC
GND
GND
LOSEL
GND
GND
GND
12
33
7 21GND
GND
9 19RFDIV LO1
+
VCC
8 20TAPDIV
GND
2 26 GNDTAPMAIN
1 27 LO2
N.C.
N.C.
18
28
V CC
LODB
IAS
17
29
RFMAIN
EXPOSEDPAD
Chip InformationPROCESS: SiGe BiCMOS
Package InformationFor the latest package outline information and land patterns, goto www.maxim-ic.com/packages.
PACKAGE TYPE PACKAGE CODE DOCUMENT NO.
36 Thin QFN-EP T3666+2 21-0141