dual output, two-phase synchronous buck dc/dc controller ...these two modes, along with...
TRANSCRIPT
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� Qualified for Automotive Applications
� Independent Dual-Outputs Operate 180 °Out of Phase
� Wide Input Voltage Range: 4.5-V − 28-V
� Adjustable Output Voltage Down to 0.9 V
� Pin-Selectable PWM/SKIP Mode for HighEfficiency Under Light Loads
� Synchronous Buck Operation Allows up to95% Efficiency
� Separate Standby Control and OvercurrentProtection For Each Channel
� Programmable Short-Circuit Protection
� Low Supply (1 mA) and Shutdown (1 nA)Current
� Power Good Output
� High-Speed Error Amplifiers
� Sequencing Easily Achieved by SelectingSoftstart Capacitor Values.
� 5-V Linear Regulator Power Internal ICCircuitry
� 30-Pin TSSOP Packaging
� Gate Leakage Test Passing Level is 50 V
description
The TPS5120 is a dual channel, high-efficiencysynchronous buck controller where the outputsrun 180 degrees out of phase, which lowers theinput current ripple, thereby reducing the input capacitance cost. The PWM/SKIP pin allows the operating modeto switch from PWM mode to skip mode under light load conditions. The skip mode enables a lower operatingfrequency and shortens the pulse width to the low-side MOSFET, increasing the efficiency under light loadconditions. These two modes, along with synchronous-rectifier drivers, dead time, and very low quiescentcurrent, allow power to be conserved and the battery life to be extended under all load conditions. The 1.5 A(typical) high-side and low-side MOSFET drivers on-chip are designed to drive less expensive N-channelMOSFETs. The resistorless current protection and fixed high-side driver voltage simplify the power supplydesign and reduce the external parts count. Each channel is independent, offering a separate controller,overcurrent protection, and standby control. Sequencing is flexible and can be tailored by choosing differentsoftstart capacitor values. Other features, such as undervoltage lockout, power good, overvoltage,undervoltage, and programmable short-circuit protection promote system reliability.
ORDERING INFORMATION�
PACKAGE�
TA TSSOP(DBT)
−40°C to 125°C TPS5120QDBTRQ1† For the most current package and ordering
information, see the Package OptionAddendum at the end of this document, orsee the TI web site at http://www.ti.com.
‡ Package drawings, thermal data, andsymbolization are available athttp://www.ti.com/packaging.
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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INV1FB1
SOFTSTART1PWM/SKIP
CT5V_STBY
GNDREF
STBY1STBY2
FLTPOWERGOODSOFTSTART2
FB2INV2
LH1OUT1_uLL1OUT1_dOUTGND1TRIP1VCCTRIP2VREF5REG5V_INOUTGND2OUT2_dLL2OUT2_uLH2
DBT PACKAGE(TOP VIEW)
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typical design
22
GND L1
L2
Q1
Q2
Q3
Q4
D1
D2
C1
C3
C4
C5
C6
C7
C8
C10
C11
C12
C13
C14
R1 R2
R3
R4
R5 R6
R7
R8R9
R10
C15
U1TPS5120DBT
1
2
3
4
5
6
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9
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12
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14
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30
29
28
27
26
25
24
23
21
20
19
18
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INV1
FB1
SOFTSTART1
PWM/SKIP
CT
5V_STBY
GND
REF
STBY1
STBY2
FLT
POWERGOOD
SOFTSTART2
FB2
INV2
LH1
OUT1_u
LL1
OUT1_d
OUTGND1
TRIP1
Vcc
TRIP2
VREF5
REG5V_IN
OUTGND2
OUT2_d
LL2
OUT2_u
LH2
VO1
VI
VO2
C15
C16
Figure 1. EVM Typical Design
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functional block diagram
SOFTSTART1
DLY
DLY
OSC
Timer
SOFTSTART2
DLY
DLY
Phase
V 5 VREG
CurrentProtection
Trigger
Skip Comp.
PWM Comp.
Err Amp.
0.85 V
STBY1UVLO
SIGNAL
STBY2
OVP1
OVP2
UVP1
UVP2
0.85 V+12%
Err Amp.
Skip Comp.
0.85 V UVLOSIGNAL
UVLOComp.
0.85 V
INV2INV1
PGcomp4PGcomp3
INV2
PGcomp2
INV1
0.85 V−7% PGcomp1
4.5 V
5.0 V
PWM Comp.
Current Comp.
VCC
SOFTSTART1
FB1
INV1
CT
FLT
FB2
INV2
PWM/SKIP
SOFTSTART2
STBY1
STBY2REF
5V_STBY
GND
POWERGOOD
REG5V_IN
VREF5
LH2
OUT2_u
LL2
OUT2_d
OUTGND2
TRIP2
TRIP1
V
OUTGND1
OUT1_d
LL1
OUT1_u
LH1
SFT1 SFT2
Inverter
0.85 V+12%
0.85 V −19.4%
0.85 V −19.4%
ref
0.85 V −7%
0.85 V +7%0.85 V +7%
CC
_+
_
+
_
+
_
+
_
+
_+
_
++
_+
_
++
_
+
_
+
_
+
_
+
_+
_
+
_
+
_+
_
+
_
+
−(VCC
− VTRIP1VCC
LSD Trip
HSD Trip
_
+
HSD Trip
LSD Trip
− VTRIP1)
− VTRIP2VCC
−(VCC − VTRIP2)
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Terminal Functions
TERMINALI/O DESCRIPTION
NAME NO.I/O DESCRIPTION
CT 5 I/O External capacitor from CT to GND for adjusting the triangle oscillator
FB1 2 O Feedback output of CH1 error amplifier
FB2 14 O Feedback output of CH2 error amplifier
GND 7 Control GND
INV1 1 I Inverting input of the CH1 error amplifier, skip comparator, and OVP1/UVP1 comparator
INV2 15 I Inverting input of the CH2 error amplifier, skip comparator, and OVP2/UVP2 comparator
LH1 30 I/O Bootstrap capacitor connection for CH1 high-side gate drive
LH2 16 I/O Bootstrap capacitor connection for CH2 high-side gate drive
LL1 28 I/O Bootstrap this pin low for CH1 high-side gate driving return and output current protection. Connect this pin tothe junction of the high-side and low-side FETs for a floating drive configuration.
LL2 18 I/O Bootstrap this pin low for CH2 high-side gate driving return and output current protection. Connect this pin tothe junction of the high-side and low-side FETs for a floating drive configuration.
OUT1_d 27 O Gate drive output for CH1 low-side gate drive
OUT2_d 19 O Gate drive output for CH2 low-side gate drive
OUT1_u 29 O Gate drive output for CH1 high-side switching FETs
OUT2_u 17 O Gate drive output for CH2 high-side switching FETs
OUTGND1 26 Ground for CH1 FET drivers
OUTGND2 20 Ground for CH2 FET drivers
POWERGOOD 12 O Power good open-drain output. When low, POWERGOOD reports an output fail condition. PG comparatorsmonitor both SMPS’s over voltage and UVLO of VREF5. The threshold is ±7%. When the SMPS starts up, thePOWERGOOD pin’s output goes high. POWERGOOD also monitors VREF5’s UVLO output.
PWM/SKIP 4 I PWM/SKIP mode select pin. The PWM/SKIP pin is used to change the output’s operating mode. If this terminalis lower than 0.5 V, it works in PWM mode. When a minimum voltage of 2 V is applied, the device operates inskip mode. In light load condition (< 0.2 A), the skip mode gives a short pulse to the low-side FETs instead of afull pulse. With this control, switching frequency is lowered and switching loss is reduced. Also, the outputcapacitor energy discharging through the output inductor and low-side FETs is stopped. Therefore, TPS5120achieves a higher efficiency in light load conditions.
REF 8 O 0.85-V reference voltage output. The 0.85-V reference voltage is used for setting the output voltage and thevoltage protection. This reference voltage is dropped down from a 5-V regulator.
REG5V_IN 21 I External 5-V input
FLT 11 I/O Fault latch timer pin. An external capacitor is connected between FLT and GND to set the FLT enable time up.
SOFTSTART1 3 I/O External capacitor from SOFTSTART1 to GND for CH1 softstart control. Separate soft-start terminals make itpossible to set the start-up time of each output independently.
SOFTSTART2 13 I/O External capacitor from SOFTSTART2 to GND for CH2 softstart control. Separate soft-start terminals make itpossible to set the start-up time of each output independently.
STBY1 9 I Standby control for CH1. SMPS1 can be switched into standby mode separately by grounding the STBY1 pin.
STBY2 10 I Standby control for CH2. SMPS2 can be switched into standby mode separately by grounding the STBY2 pin.
TRIP1 25 I External resistor connection for CH1 output current control
TRIP2 23 I External resistor connection for CH2 output current control
VCC 24 Supply voltage input
VREF5 22 O 5-V internal regulator output
5V_STBY 6 I 5-V linear regulator control
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detailed description
switching-mode power supply (SMPS) 1, 2
The TPS5120 includes dual SMPS controllers that operate 180° out of phase and at the same frequency. Bothchannels have standby and softstart.
5-V regulator
An internal linear voltage regulator is used for the high-side driver bootstrap voltage and source of VREF(0.85 V). When the 5-V regulator is disconnected from the MOSFET drivers, it is only used for the source ofVREF. Since the input voltage range is from 4.5 V to 28 V, this feature offers a fixed voltage for the bootstrapvoltage so that the drive design is much easier. It is also used for powering the low-side driver. The toleranceis 4%. The 5-V regulator is disabled when STBY1, STBY2, and 5V_STBY are all set low.
5-V switch
If the internal 5-V switch senses the 5-V input from the REG5V_IN pin, the internal 5-V linear regulator isdisconnected from the MOSFET drivers. The external 5 V is then used for both the low-side driver and thehigh-side bootstrap, thus, increasing the efficiency.
error amplifier
Each channel has its own error amplifier to regulate the output voltage of the synchronous buck converter. Itis used in the PWM mode for the high output current condition (> 0.2 A). The unity gain bandwidth is 2.5 MHz.This decreases the amplifier delay during fast load transients and contributes to a fast transient response.
skip comparator
In skip mode, each channel has its own hysteretic comparator to regulate the output voltage of the synchronousbuck converter. The hysteresis is set internally and is typically set at 9 mV. The delay from the comparator inputto the driver output is typically 1.2 µs.
low-side driver
The low-side driver is designed to drive low rds(on) N-channel MOSFETs. The maximum drive voltage is 5 V fromVREF5. The current rating of the driver is typically 1.5 A at source and sink.
high-side driver
The high-side driver is designed to drive low rds(on) N-channel MOSFETs. The current rating of the driver is 1.2 Aat source and sink. When configured as a floating driver, the bias voltage to the driver is developed from VREF5,limiting the maximum drive voltage between OUTx_u and LLx to 5 V. The maximum voltage that can be appliedbetween LHx and OUTGND is 33 V.
deadtime
Deadtime prevents shoot through current from flowing through the main power FETs during switching transitionsby actively controlling the turnon time of the MOSFETs drivers.
current protection
Overcurrent protection is achieved by comparing the drain-to-source voltage of the high-side and low-sideMOSFET devices to a set-point voltage. This voltage is set using an external resistor between VCC and theTRIP1 or TRIP2 terminals. If the drain-to-source voltage up exceeds the set-point voltage during high-sideconduction, the current limit circuit terminates the high-side driver pulse. If the set-point voltage is exceededduring low-side conduction, the low-side pulse is extended through the next cycle. Together this action has theeffect of decreasing the output voltage until the undervoltage protection circuit is activated and the fault latchis set and both the high and low-side MOSFET drivers are shut off.
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detailed description (continued)
overvoltage protection
For overvoltage protection (OVP), the TPS5120 monitors INV pin voltage. When the INV voltage is higher than0.95 V (+12%), the OVP comparator output goes high and the FLT timer starts to charge an external capacitorconnected to FLT. After a set time, the FLT circuit latches the MOSFET drivers off.
undervoltage protection
For undervoltage protection (UVP), the TPS5120 monitors INV pin voltage. When the INV voltage is lower than0.68 V (−19.4%), the OVP comparator output goes high, and the FLT timer starts to charge an external capacitorconnected to FLT. Also, when the current comparator triggers the OCP, the UVP comparator detects the undervoltage output and starts the FLT capacitor charge. After a set time, the FLT circuit latches off all of the MOSFETdrivers.
FLT
When an OVP or UVP comparator output goes high, the FLT circuit starts to charge the FLT capacitor. If theFLT pin voltage goes beyond a constant level, the TPS5120 latches the MOSFET drivers. At this time, the stateof MOSFET is different depending on the OVP alert and the UVP alert. Also, the enable time used to latch theMOSFET driver is decided by the capacity of the FLT capacitor. The charging constant current value is alsodifferent depending on whether it is an OVP alert or a UVP alert. The difference is shown in the followingequation:
FLT source current (OVP) = FLT source current (UVP) × 5
shutdown
The TPS5120 can be shut down by grounding STBY1, STBY2, and 5V_STBY. The shutdown current is as lowas 1 µA.
UVLO
When the input voltage goes up to about 4 V, the TPS5120 is operational. When the input voltage is lower thanthe turnon value, the device is turned off. The typical hysteresis voltage is 40 mV.
phase Inverter
Phase inverter controls the phase of SMPS1 and SMPS 2. SMPS1 operates in phase with the OSC. SMPS2operates 180° out of phase from SMPS1. This allows smaller input capacitors to be used.
oscillator
The TPS5120 has a triangle oscillator generator internal to the IC. The oscillation frequency is set by the sizeof the capacitor connected to the CT pin. The voltage amplitude is 0.43 V ~ 1.17 V.
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Table 1. Logic Chart
5V_STBY STBY1 STBY2 SMPS1 SMPS2 5 V REGULATOR POWERGOOD
L L L Disable Disable Disable Disable
L L H Disable Enable Enable Active†
L H L Enable Disable Enable Active†
L H H Enable Enable Enable Active
H L L Disable Disable Enable L
H L H Disable Enable Enable Active†
H H L Enable Disable Enable Active†
H H H Enable Enable Enable Active† PG is set high during a softstart.
POWERGOOD timing sequence
POWERGOOD
STBY1
STBY2
INV1
INV2
H
L
H
L
H
L
0.91 V0.85 V0.78 V
0 V
0.91 V
0.85 V0.78 V
0 V
TSS
During a softstart, this channel’s powergood comparator output is fixed low (POWERGOOD output is high).
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absolute maximum ratings over operating free-air temperature (unless otherwise noted) †
Supply voltage, VCC (see Note 1) −0.3 V to 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage: INV1, INV2, CT, PWM/SKIP, REG5V_IN, SOFTSTART1, SOFTSTART2, −0.3 V to 7 V. . . . .
FLT, POWERGOOD −0.3 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . STBY1, STBY2, 5V_STBY, TRIP1, TRIP2 −0.3 V to 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage: LL1, LL2 −1.0 V to 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . OUT1_u, OUT2_u −1.0 V to 35 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LH1, LH2 −0.3 V to 35 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . OUT1_d, OUT2_d, 5V_OUT, FB1, FB2 −0.3 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . REF −0.3 V to 3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . OUT1_u, LH1 to LL1 −0.3 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . OUT2_u, LH2 to LL2 −0.3 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation (TA ≤ 25°C), PD 874 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Leakage Test Results ±50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating junction temperature range, TJ −40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −55°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values are with respect to the network ground terminal unless otherwise noted.2. This rating is specified at duty = 10% on output rise and fall each pulse. Each pulse width (rise and fall) for the peak current should
not exceed 2 µs.3. See Dissipation Rating Table for free-air temperature range above 25°C.
DISSIPATION RATING TABLE
PACKAGETA ≤ 25°C
POWER RATINGDERATING FACTORABOVE TA = 25°C
POWER DISSIPATIONTA = 85°C
DBT 874 mW 6.993 mW/°C 454 mW
recommended operating conditions
MIN NOM MAX UNIT
Supply voltage, VCC 4.5 28 V
INV1, INV2, CT, PWM/SKIP, SOFTSTART1, SOFTSTART2, FLT 6
REG5V_IN, POWERGOOD −0.1 5.5
Input voltage, VI STBY1, STBY2, 5V_STBY 28 VInput voltage, VIOUT1_u, OUT2_u, LH1, LH2 33
V
TRIP1, TRIP2 −0.1 28
Oscillator frequency, fosc 300 500 kHz
Operating junction temperature range, TJ −40 125 °C
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electrical characteristics over recommended free-air temperature range, V CC = 7 V (unlessotherwise noted)
reference voltagePARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Vref Reference voltage 0.85 V
TA = 25°C, I = 50 µA −1% 1%
Vref(tol) Reference voltage tolerance TJ = −20°C to 125°C, I = 50 µA −1.5% 1.5%Vref(tol) Reference voltage toleranceTJ = −40°C to 125°C, I = 50 µA −2% 2%
R(egin) Line regulation VCC = 4.5 V to 28 V, I = 50 µA 0.05 3 mV
R(egl) Load regulation I = 0.1 µA to 1 mA 0.15 5 mV
oscillatorPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fosc Frequency PWM mode, CT = 44 pF, TA = 25 °C 300 kHz
VOH High level output voltageDC 1 1.1 1.2
VVOH High level output voltage fosc = 300 kHz 1.17V
VOL Low level output voltageDC 0.4 0.5 0.6
VVOL Low level output voltage fosc = 300 kHz 0.43V
error amplifierPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIO Input offset voltage TA = 25°C 2 10 mV
Open-loop voltage gain 50 dB
Unity-gain bandwidth 2.5 MHz
I(snk) Output sink current VO = 1 V 0.3 0.7 mA
I(src) Output source current VO = 1 V 0.2 0.9 mA
skip comparatorPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Vhys Hysteresis window SKIP mode 9 mV
duty controlPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DUTY Maximum duty cycle 300 kHz, VI = 0 V 83%
controlPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High-level input voltageSTBY1, STBY2 2.2
VVIH High-level input voltage PWM/SKIP, 5V_STBY 2.2V
VIL Low-level input voltageSTBY1, STBY2 0.3
VVIL Low-level input voltage PWM/SKIP, 5V_STBY 0.3V
5-V internal switchPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(TO_H)Threshold
4.2 4.8V
V(TO_L)Threshold
4.1 4.7V
Vhys Hysteresis 30 200 mV
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SGLS225B − JANUARY 2004 − REVISED APRIL 2008
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electrical characteristics over recommended free-air temperature range, V CC = 7 V (unlessotherwise noted) (continued)
5-V regulatorPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VO Output voltageIO = 0 mA to 50 mA,TA = 25°C
VCC = 5.5 V to 28 V, 4.8 5.2 V
R(egin) Line regulation VCC = 5.5 V to 28 V, I =10 mA 20 mV
R(egl) Load regulation I = 1 mA to 10 mA, VCC = 5.5 V 40 mV
IOS Short circuit output current 5VREG = 0 V, TA = 25°C 65 mA
V(TO_H)UVLO threshold voltage 5V_OUT voltage
3.6 4.2V
V(TO_L)UVLO threshold voltage 5V_OUT voltage
3.5 4.1V
Vhys Hysteresis 5V_OUT voltage 20 150 mV
output driversPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUT_u sink current VO = 3 V 1.2 A
OUT_u source current VO = 2 V −1.5 A
OUT_d sink current VO = 3 V 1.5 A
OUT_d source current VO = 2 V −1.5 A
I(TRIP) TRIP pin current TA = 25°C 11.5 13 14.5 µA
soft startPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I(SOFT) Soft start current 1.6 2.3 2.9 µA
V(TO_H)Threshold voltage (SKIP mode)
3.7V
V(TO_L)Threshold voltage (SKIP mode)
2.5V
output voltage monitorPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OVP comparator threshold 0.91 0.95 0.99 V
UVP comparator threshold 0.64 0.68 0.72 V
PG comparator 1, 2 threshold 0.75 0.78 0.81 V
PG comparator 3, 4 threshold 0.88 0.91 0.94 V
PG propagation delay from INV to POWERGOODTurnon 13
sPG propagation delay from INV to POWERGOODTurnoff 1.2
µs
Timer latch current sourceUVP protection 1.5 2.3 3.1
ATimer latch current sourceOVP protection 8 11.5 15
µA
supply currentPARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ICC Supply current TA = 25°C, CT = 0 V, INV = 0 V 1.1 1.5 mA
ICC(S) Shutdown current STBY 1, STBY2, 5V_STBY = 0 V 0.001 10 µA
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TYPICAL CHARACTERISTICS
Figure 2
TJ − Junction Temperature − °C
QUIESCENT CURRENTvs
JUNCTION TEMPERATURE
1.05
1.10
1.15
1.20
1.25
1.30
−50 0 50 100 150
Icc
− Q
uies
cent
Cur
rent
− m
A
VCC = 28 V
VCC = 7 VVCC = 4.5 V
QUIESCENT CURRENT (SHUTDOWN)vs
JUNCTION TEMPERATURE
0
200
400
600
800
1000
1200
−50 0 50 100 150
Icc(
s) −
Qui
esce
nt C
urre
nt −
nA VCC = 28 V
VCC = 7 V
VCC = 4.5 V
TJ − Junction Temperature − °CFigure 3
Figure 4
DRIVE OUTPUT CURRENT (OUT_u)vs
DRIVE OUTPUT VOLTAGE−1.80
−1.70
−1.60
−1.50
−1.40
−1.30
−1.20
−1.10
−1.00
−0.90
−0.800.5 1 1.5 2 2.5 3 3.5
I O(S
OU
RC
E) −
Driv
e O
utpu
t Cur
rent
(O
UT
_u)
− A
TJ = −40 °C
TJ = −20 °C
TJ = 25 °C
TJ = 85 °C
TJ = 125 °C
VO − Drive Output Voltage (OUT_u) − VFigure 5
vsDRIVE OUTPUT VOLTAGE
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.5 2 2.5 3 3.5 4 4.5
I O(S
INK
)
TJ = −40 °C
TJ = 25 °CTJ = −20 °C
TJ = 85 °C
TJ = 125 °C
VO − Drive Output Voltage (OUT_u) − V
DRIVE OUTPUT CURRENT (OUT_u)
− D
rive
Out
put C
urre
nt (
OU
T_u
) −
A
-
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��
SGLS225B − JANUARY 2004 − REVISED APRIL 2008
12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
DRIVE OUTPUT CURRENT (OUT_d)vs
DRIVE OUTPUT VOLTAGE−2.00
−1.80
−1.60
−1.40
−1.20
−1.00
−0.800.5 1 1.5 2 2.5 3 3.5
VO − Drive Output Voltage (OUT_d) − V
I O(S
OU
RC
E)−
Driv
e O
utpu
t Cur
rent
(O
UT
_d)
− A
TJ = −40 °C TJ = −20 °C
TJ = 25 °C
TJ = 85 °C TJ = 125 °C
Figure 7
vsDRIVE OUTPUT VOLTAGE
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.5 2 2.5 3 3.5 4 4.5
TJ = −40 °C TJ = −20 °C
TJ = 25 °C
TJ = 85 °C
TJ = 125 °CI O
(SIN
K)
DRIVE OUTPUT CURRENT (OUT_d)
− D
rive
Out
put C
urre
nt (
OU
T_d
) −
A
VO − Drive Output Voltage (OUT_d) − V
Figure 8
OSCILLATOR OUTPUT VOLTAGEvs
JUNCTION TEMPERATURE
1.00
1.02
1.04
1.06
1.08
1.10
1.12
1.14
1.16
1.18
1.20
−50 0 50 100 150
V (O
SC
H)
− O
scill
ator
Out
put V
olta
ge −
V
VCC = 4.5 V,VCC = 7 V,VCC = 28 V
TJ − Junction Temperature − °C
Figure 9
OSCILLATOR OUTPUT VOLTAGEvs
JUNCTION TEMPERATURE
480
485
490
495
500
−50 0 50 100 150
V (O
SC
L) −
Osc
illat
or O
utpu
t Vol
tage
− m
V
TJ − Junction Temperature − °C
VCC = 4.5 V,VCC = 7 V,VCC = 28 V
-
���������
�� ������� ��������� ����������� ���� ��� ������
��
SGLS225B − JANUARY 2004 − REVISED APRIL 2008
13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 10
ERROR AMPLIFIER INPUT OFFSET VOLTAGEvs
JUNCTION TEMPERATURE
2.20
2.25
2.30
2.35
2.40
2.45
2.50
2.55
−50 0 50 100 150
VIO
− E
rror
Am
plifi
er In
put O
ffset
Vol
tage
− m
V
VCC = 28 V
TJ − Junction Temperature − °C
VCC = 4.5 V,VCC = 7 V
Figure 11
ERROR AMPLIFIER OUTPUT VOLTAGE vs
JUNCTION TEMPERATURE
1.50
1.75
2.00
2.25
2.50
2.75
3.00
−50 0 50 100 150V O
+ −
Pos
itive
Err
or A
mpl
ifier
Out
put V
olta
ge −
V
VCC = 4.5 V,VCC = 7 V,VCC = 28 V
TJ − Junction Temperature − °C
Figure 12
ERROR AMPLIFIER OUTPUT VOLTAGEvs
JUNCTION TEMPERATURE
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
−50 0 50 100 150
VO
−−
Neg
ativ
e E
rror
Am
plifi
er O
utpu
t Vol
tage
− m
V
TJ − Junction Temperature − °C
VCC = 4.5 V,VCC = 7 V,VCC = 28 V
Figure 13
SKIP COMPARATOR HYSTERESIS VOLTAGEvs
JUNCTION TEMPERATURE
7.0
7.2
7.4
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
−50 0 50 100 150
Vhy
s −
Ski
p C
ompa
rato
r H
yste
resi
sV
olta
ge −
mV
VCC = 4.5 V
VCC = 7 VVCC = 28 V
TJ − Junction Temperature − °C
-
���������
�� ������� ��������� ����������� ���� ��� ������
��
SGLS225B − JANUARY 2004 − REVISED APRIL 2008
14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 14
VREF5 OUTPUT VOLTAGEvs
OUTPUT CURRENT
4.50
4.60
4.70
4.80
4.90
5.00
5.10
5.20
−60−50−40−30−20−100IO − Output Current − mA
TJ = −40 °CTJ = −20 °C
TJ = 25 °C
TJ = 85 °C
TJ = 125 °C
V O −
VR
EF
5 O
utpu
t Vol
tage
− V
Figure 15
VREF5 SHORT-CIRCUIT OUTPUT CURRENTvs
JUNCTION TEMPERATURE−120
−100
−80
−60
−40
−20
0−50 0 50 100 150
I OS
− V
RE
F5
Sho
rt−C
ircui
t Out
put C
urre
nt −
mA
VCC = 4.5 V
VCC = 7 V
VCC = 28 V
TJ − Junction Temperature − °C
Figure 16
UVLO THRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
3.50
3.60
3.70
3.80
3.90
4.00
−50 0 50 100 150
V (TO
) −
UV
LO T
hres
hold
Vol
tage
− V
V(TO_H)
V(TO_L)
TJ − Junction Temperature − °C
Figure 17
UVLO HYSTERESIS VOLTAGEvs
JUNCTION TEMPERATURE
0
20
40
60
80
100
120
140
−50 0 50 100 150
V hys
− U
VLO
Hys
tere
sis
Volta
ge −
mV
TJ − Junction Temperature − °C
-
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�� ������� ��������� ����������� ���� ��� ������
��
SGLS225B − JANUARY 2004 − REVISED APRIL 2008
15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 18
REG5V_IN THRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
4.4
4.5
4.5
4.6
4.6
4.7
4.7
−50 0 50 100 150
V (TO
)− R
EG
5V_I
N T
hres
hold
Vol
tage
− V
V(TO_L)
V(TO_H)
TJ − Junction Temperature − °C
Figure 19
REG5V_IN HYSTERESIS VOLTAGEvs
JUNCTION TEMPERATURE
0
20
40
60
80
100
120
140
−50 0 50 100 150
V hys
− R
EG
5V_I
N H
yste
resi
s Vo
ltage
− m
V
TJ − Junction Temperature − °C
Figure 20
−50 0 50 100 150
SOFTSTART CURRENTvs
JUNCTION TEMPERATURE−2.30
−2.28
−2.26
−2.24
−2.22
−2.20
−2.18
−2.16
−2.14
−2.12
−2.10
Sof
tsta
rt C
urre
nt −
A
VCC = 4.5 V
µ
TJ − Junction Temperature − °C
VCC = 7 V,VCC = 28 V
Figure 21
OVP THRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
944
946
948
950
952
954
956
−50 0 50 100 150
V (TO
) − O
VP
Thr
esho
ld V
olta
ge −
mV
VCC = 4.5 V
TJ − Junction Temperature − °C
VCC = 7 V,VCC = 28 V
-
���������
�� ������� ��������� ����������� ���� ��� ������
��
SGLS225B − JANUARY 2004 − REVISED APRIL 2008
16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 22
POWERGOOD THRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
750
775
800
825
850
875
900
925
950
−50 0 50 100 150
V (TO
)− P
ower
good
Thr
esho
ld V
olta
ge −
mV V(TO_H)
V(TO_L)
TJ − Junction Temperature − °C
VCC = 4.5 V,VCC = 7 V,VCC = 28 V
VCC = 4.5 V,VCC = 7 V,VCC = 28 V
Figure 23
SCP (OVP) SOURCE CURRENTvs
JUNCTION TEMPERATURE−12.0
−11.9
−11.8
−11.7
−11.6
−11.5
−11.4
−11.3
−11.2
−11.1
−11.0−50 0 50 100 150
SC
P (
OV
P)
Sou
rce
Cur
rent
−
VCC = 4.5 V
TJ − Junction Temperature − °C
VCC = 7 V,VCC = 28 V
Aµ
Figure 24
SCP (OVP) SOURCE CURRENTvs
JUNCTION TEMPERATURE−2.40
−2.38
−2.35
−2.33
−2.30
−2.28
−2.25
−2.23
−2.20−50 0 50 100 150
I (SO
UR
CE
) −
VCC = 4.5 VSC
P (
OV
P)
Sou
rce
Cur
rent
−
TJ − Junction Temperature − °C
VCC = 7 V,VCC = 28 V
Aµ
Figure 25
TRIP SINK CURRENTvs
TRIP INPUT VOLTAGE
12.0
12.2
12.4
12.6
12.8
13.0
13.2
13.4
13.6
13.8
14.0
0 4 8 12 16 20 24 28 32
VI − TRIP Input Voltage − V
I (SIN
K)−
TR
IP S
ink
Cur
rent
−
A
TJ = −40 °C
TJ = −20 °C
TJ = 25 °C
TJ = 85 °CTJ = 125 °C
µ
-
���������
�� ������� ��������� ����������� ���� ��� ������
��
SGLS225B − JANUARY 2004 − REVISED APRIL 2008
17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 26
OSCILLATOR FREQUENCYvs
CAPACITANCE
10
100
1000
0 50 100 150 200 250CT − Capacitance − pF
f OS
C −
Osc
illat
or F
requ
ency
− k
Hz
VCC = 7 V,
TJ = 25 °C
Figure 27
OUTPUT MAXIMUM DUTY CYCLEvs
JUNCTION TEMPERATURE
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
−50 0 50 100 150O
utpu
t Max
imum
Dut
y C
ycle
− %
VCC = 7 V,
VCC = 28 V
VCC = 4.5 V
TJ − Junction Temperature − °C
fosc = 300 kHz
Figure 28
SCP DELAY TIMEvs
CAPACITANCE
1
10
100
1 k
10 k
100 k
10 100 1 k 10 k 100 kSCP − Capacitance − pF
− S
CP
Del
ay T
ime
(O
VP
) −
st d
(SC
P)
µ
Figure 29
SOFTSTART TIMEvs
SOFTSTART CAPACITANCE
10
100
1 k
10 k
100 k
100 1 k 10 k 100 kSoftstart Capacitance − pF
t −
Sof
tsta
rt T
ime
− sµ
-
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��
SGLS225B − JANUARY 2004 − REVISED APRIL 2008
18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 30
DRIVER DEAD TIME (OUT_u FALL)vs
JUNCTION TEMPERATURE
162.5
165.0
167.5
170.0
172.5
175.0
−50 0 50 100 150
Driv
er D
ead
Tim
e −
ns
VCC = 4.5 V
TJ − Junction Temperature − °C
VCC = 7 V,VCC = 28 V
Figure 31
DRIVER DEAD RISE TIME (OUT_u RISE)vs
JUNCTION TEMPERATURE
70
75
80
85
90
95
100
−50 0 50 100
Driv
er a
nd D
ead
Ris
e Ti
me
(OU
T_u
RIS
E)
VCC = 4.5 V
TJ − Junction Temperature − °C
VCC = 7 V,VCC = 28 V
-
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status(1)
Package Type PackageDrawing
Pins PackageQty
Eco Plan(2)
Lead finish/Ball material
(6)
MSL Peak Temp(3)
Op Temp (°C) Device Marking(4/5)
Samples
TPS5120QDBTRQ1 ACTIVE TSSOP DBT 30 2000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 TPS5120Q1
TPS5120QDBTRQ1G4 ACTIVE TSSOP DBT 30 2000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 TPS5120Q1
(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substancedo not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI mayreference these types of products as "Pb-Free".RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
-
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 2
OTHER QUALIFIED VERSIONS OF TPS5120-Q1 :
• Catalog: TPS5120
• Enhanced Product: TPS5120-EP
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
• Enhanced Product - Supports Defense, Aerospace and Medical Applications
http://focus.ti.com/docs/prod/folders/print/tps5120.htmlhttp://focus.ti.com/docs/prod/folders/print/tps5120-ep.html
-
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device PackageType
PackageDrawing
Pins SPQ ReelDiameter
(mm)
ReelWidth
W1 (mm)
A0(mm)
B0(mm)
K0(mm)
P1(mm)
W(mm)
Pin1Quadrant
TPS5120QDBTRQ1 TSSOP DBT 30 2000 330.0 16.4 6.95 8.3 1.6 8.0 16.0 Q1
TPS5120QDBTRQ1G4 TSSOP DBT 30 2000 330.0 16.4 6.95 8.3 1.6 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jul-2019
Pack Materials-Page 1
-
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS5120QDBTRQ1 TSSOP DBT 30 2000 350.0 350.0 43.0
TPS5120QDBTRQ1G4 TSSOP DBT 30 2000 350.0 350.0 43.0
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jul-2019
Pack Materials-Page 2
-
www.ti.com
PACKAGE OUTLINE
C
28X 0.5
2X
7.15
30X
0.23
0.17
6.55
6.25
TYP
1.2 MAX
0.15
0.05
0.25
GAGE PLANE
-80
B
4.5
4.3
NOTE 4
A
7.85
7.75
NOTE 3
0.75
0.50
(0.15) TYP
TSSOP - 1.2 mm max heightDBT0030A
SMALL OUTLINE PACKAGE
1
15
16
30
0.1 C A B
PIN 1 INDEX AREA
SEE DETAIL A
0.1 C
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-153.
SEATING
PLANE
A 20
DETAIL A
TYPICAL
SCALE 2.000
4220214/A 05/2020
-
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EXAMPLE BOARD LAYOUT
0.05 MAX
ALL AROUND
0.05 MIN
ALL AROUND
30X (1.5)
30X (0.3)
30X (0.5)
(5.8)
(R0.05) TYP
TSSOP - 1.2 mm max heightDBT0030A
SMALL OUTLINE PACKAGE
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 10X
SYMM
SYMM
1
15 16
30
15.000
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
OPENING
EXPOSED METALEXPOSED METAL
SOLDER MASK DETAILS
NON-SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
4220214/A 05/2020
-
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EXAMPLE STENCIL DESIGN
30X (1.5)
30X (0.3)
30X (0.5)
(5.8)
(R0.05) TYP
TSSOP - 1.2 mm max heightDBT0030A
SMALL OUTLINE PACKAGE
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE: 10X
SYMM
SYMM
1
15 16
30
4220214/A 05/2020
-
IMPORTANT NOTICE AND DISCLAIMER
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Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265Copyright © 2020, Texas Instruments Incorporated
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