1
SiP Design and Verification using ADSSiP Design and Verification using ADS
June 17, [email protected]
22
▣ Contents
• Introduction
• SiP Definition in Package Assembly Area
• SiP Test Board Design and Characterization
• ADS Applications for STATSChipPAC Technology
33
eWLB
QFN‐dr
FBGA‐SD
PoP
PiP
Fan‐out WLCSP
Low cost fc‐CSP
Emphasis on flip chip & wafer level packaging development
Low cost Flip Chip MUF base Cu fcPoP/Cu fcPiP+TSV
Memory stack
Packaging Focus
Emerging Enabling Technologies
Cu ColumnHybrid Bump
TSV & µbumpPb-free Bump
SOWStacked die
BOL Stacked WLCSP
3D Enabling Technologies
Enabling Technology Focus
Advanced and Standard Laminate Packaging• 3D Package Stacking (PiP, PoP, fcPiP, fcPoP, fiPoP)• System-in-Package (SiP) • Flip-chip Chip-scale Package (FCCSP)• Chip-scale packageAdvanced and Standard Leaded Packaging• Stacked Die• QFN, QFPWafer Level Packaging (WLCSP) / Embeded Wafer Level BGA (eWLB)Bumping and Wafer Process Services• 12”/8” Electroplated Bumping• Integrated Passive Device (IPD)• Redistribution Layer (RDL)
Packaging Products
▣ IntroductionHigh Experience in Product Designs
44
SiP Definition in Package Assembly Area
• System in Package Definition
• Key Technologies for SiP Module
55
A Fully Integrated System or Sub-System
• One or more semiconductor chips on a die interconnectsubstrate plus:
• Passive components that would otherwise be integrated on the mother board.
• Surface mount discrete passives.
• Embedded or patterned into substrate.
• Integrated passive components/die.
• Other subsystem components:
• Shield, SAW filters, packaged ICs, connectors, antennas, mechanical housings, etc.
• A fully integrated functional block bridging the gap between SOC and PCB implementations.
▣ System in Package Definition
66
Mold fill under Chip capIPD (Integrated
Passive Die ) TechHigh density SMT
Placement Stacked Die +Passive Mount
Stacked DieCapability
Chip Cap
PCB
• Design capability for customized module
• Highly integrated passive mounting
• Capable of Multi die and Stack die combination
• Consistent Wire Length and Wire Loop Control
• IPD tech. based on Si
• EMI metal shield application
• Build up and stubless substrate design
Metal Shield Integration
Passives on Leadframe
▣ Key Technologies for SiP Module
77
Test Board Design and Characterization
• Single Ended Transmission Line Design
• Differential Pair Design
• Printed Inductor / Capacitor
• Wire Bond Characterization
88
▣ Overall Test Board Layout
• Dimension: 40mm X 40mm• GSG Probe Pitch: 150um• Stack-up: 1-2-1 4 layer• Thickness: 0.26T
99
• The characteristic impedance of a simple trace can be calculated from its two-port S-parameters.
• These parameters can be derived from either simulation or direct measurement.
Single Ended Line Tester
Line Width Line Length
GSG Probe
• Widths range: 50um ~ 150um
• lengths Range: 10mm and 20mm
▣ Single Ended Transmission Line
1010
▣ Single Ended Transmission Line
• The characteristic impedance can be calculated from
0 11 11/Z Z Y=
Momentum Simulation Results
Eqn Zo = sqrt(Z11/Y11)
2 4 6 80 10
50
45
55
freq, GHz
ma
g(Z
o)
TermTerm6
Z=50 OhmNum=6
S2PSNP59File=
21
Ref
TermTerm5
Z=50 OhmNum=5
Characteristic impedance
1111
▣ Single Ended Transmission Line (1cm)
Case4: Line width: 125um Case5: Line width: 150um
• Blue: Simulation / Red: Measurement• Reference Frequency: 1GHz
m1freq=Z_MoM=73.138
1.000GHzm2freq=Z_Mea=75.301
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Z_
Me
a
m2
Z_
Mo
M
m1
m1freq=Z_MoM=73.138
1.000GHzm2freq=Z_Mea=75.301
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Z_
Me
a
m2Z_
Mo
M
m1
m1freq=Z_MoM=54.444
1.000GHzm2freq=Z_Mea=56.379
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Z_
Me
a
m2Z_
Mo
M
m1
m1freq=Z_MoM=48.331
1.000GHzm2freq=Z_Mea=49.343
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Z_
Me
a
m2
Z_
Mo
M
m1
m1freq=Z_MoM=35.916
1.000GHzm2freq=Z_Mea=35.780
1.000GHz
Case1: Line width: 50um Case2: Line width: 75um Case3: Line width: 100um
1 2 3 40 5
50
100
150
0
200
freq, GHz
Z_
Me
a
m4
Z_
Mo
M
m3
m4freq=Z_Mea=72.139
1.000GHzm3freq=Z_MoM=69.212
1.000GHz
1212
▣ Single Ended Transmission Line (2cm)
Case1: Line width: 50um Case2: Line width: 75um Case3: Line width: 100um
Case4: Line width: 125um Case5: Line width: 150um
• Blue: Simulation / Red: Measurement• Reference Frequency: 1GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Z_
Me
a
m2
Z_
Mo
M
m1
m1freq=Z_MoM=35.413
1.000GHzm2freq=Z_Mea=35.397
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Z_
Me
a
m2
Z_
Mo
M
m1
m1freq=Z_MoM=79.999
1.000GHzm2freq=Z_Mea=80.853
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Z_
Me
a
m2
Z_
Mo
M
m1
m1freq=Z_MoM=66.352
1.000GHzm2freq=Z_Mea=67.213
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Z_
Me
a
m2Z_
Mo
M
m1
m1freq=Z_MoM=56.635
1.000GHzm2freq=Z_Mea=57.830
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Z_
Me
a
m2
Z_
Mo
M
m1
m1freq=Z_MoM=42.183
1.000GHzm2freq=Z_Mea=42.896
1.000GHz
1313
50 75 100 125 15030
35
40
45
50
55
60
65
70
75
80
85
35.4142.18
56.64
66.35
80.00
35.40
42.90
57.83
67.21
Impe
danc
e [O
hm]
Width [um]
Simulation Measurement
80.85
▣ Single Ended Transmission Line
• Max error rate is 4.06% (2.93 Ohm difference) for 1cm single ended transmission line tester, and is 1.77% (1.19 Ohm difference) for 2cm single ended transmission line tester.
1cm transmission line 2cm transmission line
50 75 100 125 150
35
40
45
50
55
60
65
70
75
80
73.14
69.21
54.44
48.33
35.92
35.78
49.34
56.38
72.14
Impe
danc
e [O
hm]
Width [um]
Simulation Measurement
75.30
1414
▣ Differential Pair
• The capacitance increase and the inductance decrease of the odd-mode affect the characteristic impedance as follows:
Odd Mode
Electrical field of odd mode Magnetic field of odd mode
modd
m
L LZC C−
=+
Electrical field of even mode magnetic field of even mode
Even Mode• The inductance increase and the capacitance decrease of the even-mode affect the characteristic impedance as follows:
meven
m
L LZC C+
=−
1515
▣ Differential Pair
Differential Mode
Common Mode
2 2differential odddifferential odd
differential odd
V VZ ZI I
×= = = ×
differential oddI I=2differential oddV V= ×
oddodd
odd
VZI
=
2 2common even even
commoncommon even
V V ZZI I
= = =×
2common evenI I= ×common evenV V=
eveneven
even
VZI
=
1616
Extracting Self and Mutual Inductance
• Inductance matrix for differential lines can be extracted from two-port Z-parameters with the far ends grounded.
( ) /ij ijL imag Z ω=
• The low-frequency limit of this expression gives the self (L11 and L22) and mutual (L12) inductances.
TermTerm2
Z=50 OhmNum=2
TermTerm1
Z=50 OhmNum=1 MCLIN
CLin1
L=3000 umS=50.0 umW=50.0 umSubst="MSub1"
ADS model for inductance extraction
Ideal coupled line
0.5 1.0 1.5 2.0 2.5 3.0 3.50.0 4.0
5.0E-10
1.0E-9
1.5E-9
2.0E-9
2.5E-9
0.0
3.0E-9
Frequency [GHz]
Sel
f_In
duct
ance
Mut
ual_
Indu
ctan
ce
Extracted Inductance [ADS Model]
1.3nH@1GHz
0.6nH@1GHz
▣ Differential Pair
Inductance extracted from ADS Model
1717
Extracting Self and Mutual Capacitance
TermTerm2
Z=50 OhmNum=2
TermTerm1
Z=50 OhmNum=1 MCLIN
CLin1
L=3000 umS=50.0 umW=50.0 umSubst="MSub1"
ADS model for capacitance extraction
Ideal coupled line
• Capacitance matrix for coupled lines can be extracted from two-port Z-parameters with the far ends open-circuited.
( ) /ij ijC imag Y ω=
• The low-frequency limit of this expression gives the self (C11 and C22) and mutual (C12) inductances.
• Note that generally the off-diagonal elements of the capacitance matrix are negative, so Cm=-C12
1 2 30 4
1E-13
2E-13
3E-13
0
4E-13
freq, GHz
Sel
f_C
apac
itanc
eM
utua
l_C
apac
itanc
e
Extracted Capacitance [ADS Model]
0.23pF@1GHz
0.065pF@1GHz
▣ Differential Pair
Capacitance extracted from ADS Model
1818
▣ Differential Pair
Normal Coupled line
Coupled line with Coplanar Ground Coupled line with Coplanar Ground and Bottom Ground
Ground Plane
Differential Pair
Dielectric
Dielectric
Ground Plane
Via
Test Structures
Co-planar Ground
Dielectric
1919
• Blue: Simulation / Red: Measurement• Reference Frequency: 1GHz
▣ Differential Pair
Case1: w:50um / s:50um Case2: w:50um / s:75um
Case3: w:75um / s: 75um Case4: w:75um / w:125um
1 2 3 40 5
50
100
150
0
200
freq, GHz
Me
a
m2
Sim
m1
Differential Impedance
m2freq=Mea=107.889
1.000GHzm1freq=Sim=110.667
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Me
a
m1
Sim
m2
Differential Impedance
m1freq=Mea=117.196
1.000GHzm2freq=Sim=119.158
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Me
a m1
Sim
m2
Differential Impedance
m1freq=Mea=93.550
1.000GHzm2freq=Sim=95.548
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Me
a
m1
Sim
m2
Differential Impedance
m1freq=Mea=99.319
1.000GHzm2freq=Sim=101.976
1.000GHz
2020
• Blue: Simulation / Red: Measurement• Reference Frequency: 1GHz
▣ Differential Pair with Coplanar Ground
1 2 3 40 5
50
100
150
0
200
freq, GHz
Me
a
m2
Sim
m1
Differential Impedance
m2freq=Mea=115.557
1.000GHzm1freq=Sim=117.728
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Me
a
m2
Sim
m1
Differential Impedance
m2freq=Mea=121.056
1.000GHzm1freq=Sim=121.509
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHz
Me
a
m2
Sim
m1
Differential Impedance
m2freq=Mea=123.165
1.000GHzm1freq=Sim=123.387
1.000GHz
1 2 3 40 5
50
100
150
0
200
freq, GHzM
ea m2
Sim
m1
Differential Impedance
m2freq=Mea=96.118
1.000GHzm1freq=Sim=97.431
1.000GHz
W: 75um / S: 125um / D: 50um
W: 75um / S: 125um / D: 50um W: 75um / S: 125um / D: 90um
W: 75um / S: 125um / D: 70um
2121
75/125/50 75/125/70 75/125/900
50
100
150
200
96.1497.43
123.17121.06115.56
123.39121.51
Diff
eren
tial I
mpe
danc
e [O
hm]
Line Width/ Space / Distance
Simulation Measurement Simulation_BOT_GND Measurement_BOT_GND
117.73
• Significant Parameters for Differential Pair Design- Line Width- Line to Line Space- Signal Line to Coplanar Ground Distance- Existence of Bottom Ground
Normal Coupled Line Coupled Line with Coplanar Ground
50/50 50/75 75/75 75/1250
50
100
150
200
99.3293.55
117.20107.89
101.9895.55
119.16
Diff
eren
tial I
mpe
danc
e [O
hm]
Line Width / Space [um]
Simulation Measurement
110.67
▣ Differential Pair
2222
▣ Printed Spiral Inductor / Capacitor
• Printed Inductor is widely used for System in Package Products.• Additional assembly process and cost are not needed to implement a printed inductor. • Main Parameters: Conductivity / Surface Roughness / Dielectric Thickness
Printed Inductor Example
Inductor
Capacitor
Quad Band PAM
SP4T
2323
1 2 3 40 5
-5.0E-8
0.0
5.0E-8
-1.0E-7
1.0E-7
freq, GHz
L_M
ea
m1
L_S
im
m2
m1freq=L_Mea=5.561E-9
100.0MHz
m2freq=L_Sim=5.287E-9
100.0MHz
1 2 3 40 5
-20
0
20
-40
40
freq, GHzQ
_Mea
m4
Q_S
im
m3 m3freq=Q_Sim=20.341
1.000GHz
m4freq=Q_Mea=21.610
1.000GHz
1 2 3 40 5
-5.0E-8
0.0
5.0E-8
-1.0E-7
1.0E-7
freq, GHz
L_M
ea
m1
L_S
im
m2
m1freq=L_Mea=4.152E-9
100.0MHz
m2freq=L_Sim=4.135E-9
100.0MHz
1 2 3 40 5
-10
0
10
20
30
-20
40
freq, GHz
Q_M
ea
m4
Q_S
im
m3 m3freq=Q_Sim=21.784
1.000GHz
m4freq=Q_Mea=23.070
1.000GHz
Turn: 2.5 Radius:250
Turn: 2.5 Radius:400
• Blue: Simulation / Red: Measurement• Reference Frequency: 100MHz
▣ Printed Spiral Inductor
2424
CAP01: 1mm2 CAP02: 2mm2
• For printed capacitors, it is not effective in the same size condition compare to SMT passives.
▣ Printed Capacitor
1 2 3 40 5
0
1E-12
2E-12
3E-12
4E-12
-1E-12
5E-12
freq, GHz
C_M
ea m1
C_S
im m2
m1freq=C_Mea=1.634E-12
1.000GHzm2freq=C_Sim=1.716E-12
1.000GHz
1 2 3 40 5
0
1E-12
2E-12
3E-12
4E-12
-1E-12
5E-12
freq, GHz
C_M
ea
m1C_S
im
m2
m1freq=C_Mea=8.567E-13
1.000GHzm2freq=C_Sim=9.350E-13
1.000GHz
2525
▣ Wire Bond Characterization
• Wire Lengths Range: 600um / 800um / 1000um / 1200um• Single bonding / Double bonding /Triple Bonding• Wire to Wire distance: 100um• 1mil gold wire
2626
▣ Wire bond Characterization Wire Loop Parameter
ADS Bond Wire Setup
GAP STRETCH600 228800 3041000 3801200 456
BONDW_ShapeShape1
FlipX=1StopH=0 umStretch=380 umTilt=0 umMaxH=270 umStartH=150 umGap=1000 umRw=12.5 um
TermTerm1
Z=50 OhmNum=1
TermTerm2
Z=50 OhmNum=2
P06
P05
P03
P04
S6PSNP1File=
1 5
4
6
3 Ref2
P05
P04
P06
P03
BONDW2WIRESET1
W2_Angle=180W2_Zoffset=0 um
W2_Yoffset=0 umW2_Xoffset=-680 umW2_Shape="Shape1"W1_Angle=0W1_Zoffset=0 umW1_Yoffset=0 umW1_Xoffset=0 umW1_Shape="Shape1"Zoffset=0 umSepY=0 umSepX=0 umLayer="cond"View=sideCond=1.3e7 SRadw=12.5 um
1
2
2727
▣ Wire Bond Characterization
WB1000_Double bonding WB1200_Double bonding
WB600_Double bonding WB800_Double bonding
1 2 3 40 5
-1E-8
1E-8
3E-8
-3E-8
5E-8
freq, GHz
Lsim m1
Lmea
s
m2
m1freq=Lsim=9.850E-10
1.000GHzm2freq=Lmeas=9.648E-10
1.000GHz
1 2 3 40 5
-1E-8
1E-8
3E-8
-3E-8
5E-8
freq, GHz
Lsim m1
Lmea
s
m2
m1freq=Lsim=1.150E-9
1.000GHzm2freq=Lmeas=1.079E-9
1.000GHz
1 2 3 40 5
-1E-8
1E-8
3E-8
-3E-8
5E-8
freq, GHz
Lsim m1
Lmea
s
m2
m1freq=Lsim=1.453E-9
1.000GHzm2freq=Lmeas=1.393E-9
1.000GHz
1 2 3 40 5
-1E-8
1E-8
3E-8
-3E-8
5E-8
freq, GHz
Lsim m1
Lmea
s
m2
m1freq=Lsim=1.648E-9
1.000GHzm2freq=Lmeas=1.586E-9
1.000GHz
• Blue: Simulation / Red: Measurement• Reference Frequency: 1GHz
2828
▣ Wire Bond Characterization
600 800 1000 1200
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
1.27
1.08
0.910.92
1.56
1.34
1.13
0.76
2.17
1.83
1.49
Indu
ctan
ce [n
H]
Wire Length [um]
Single Bonding Double Bonding Triple Bonding
1.23
• Measured and simulated characteristics of the wire bonds show consistent trends- More parallel wire bonds decreases inductance and raises Q- Longer wire bonds increase inductance and lower Q
Inductance Q Value
600 800 1000 12005
10
15
20
25
30
7.69.3
14.3
17.0 16.918.3
22.7
24.722.8
23.8
27.6
Q
Wire Length [um]
Single Bonding Double Bonding Triple Bonding
28.9
2929
ADS Applications for STATSChipPAC Technology
• Example 1: IPD Front End Module for WiMAX
• Example 2: 5 Channels Balun Bank
• Example 3: PA Module using eWLB+IPD Technology
• Example 4: TSV+IPD Technology
• Example 5: Embedded IPD
3030
▣ Example 1 – IPD Front End Module for WiMAX
Existing LTCC Solution
IPD Solution
• Product Application: Mobile Broadband Devices
• Sawless Front End Module
• IPD type: Wire Bond
• IPD Application: Balanced BPF / LPF / BalunPackage Structure
RFSwitch
RF IC
RF IC
3131
▣ Example 2 – 5 Channels Balun Bank
RFIC
FC IPD
• Product Application: Mobile Broadband Devices
• Package Solution: FcVFBGA-SD2+1, 7.0 x 7.0 sq.mm
• IPD type: Fc-IPD
• IPD Application: Balun
Package Structure
WCDMA_HB
WCDMA_IMT
WCDMA_LB
GSM_HB
GSM_LB
IPD Baluns
3232
▣ Example 3 – PA Module using eWLB+IPD Technology
• Application – G3 WCDMA application (CMOS-PA + IPD)
• new package platform for PA+IPD multichip
• eWLB had excellent high frequency electrical performance
Package Structure
Actual Product
6.1mm
5.6 mm
3333
▣ Example 4 – TSV+IPD Technology
• Silicon TSV interposer with embedded passives• Integrated silicon batch process• Fine metal line width/spacing• High performance and miniaturized packaging solutions
20% Size Reduction!!!!
IPD with TSV Normal bumped IPD
3434
▣ Example 5 – Embedded IPD