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Introduction of Silicon-based Microwave Devices Application
uses in Telecommunication, Military and Digital Imaging
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Table of Content
Table of Content........................... ........................... ........................... ........................... ............. 1
Preface ....................... ........................... ........................... ........................... ........................... .... 2 Introduction of Silicon-based Microwave Devices Application use in Telecommunication,
Military and Digital Imaging. .......................... .......................... ........................... ...................... 3
Abstract..... ........................... ........................... ........................... ........................... ............. 3
The History of Microwave................................... .......................... ........................... .................. 3
Silicon-Based Microwave Devices....................... .......................... ........................... .................. 4
Telecommunication: The Major Applicant of Microwave Devices ........................ ...................... 5
An Introduction ......................... .......................... ........................... ........................... ......... 5
The Products and their Use of Microwave Devices...................... ........................... ............. 5 The Broader Perspective........................ ........................... ........................... ....................... 7
Silicon Based Microwave Devices in The Field of Military.................................. ....................... 8
Cost efficiency........................................ ........................... ........................... ...................... 8
Si and Ga in Navy................................... ........................... ........................... ...................... 9
CCD: Imaging Devices..............................................................................................................10
An Introduction ......................... .......................... ........................... ........................... ........10
CCD in Imaging Sensor ......................... ........................... ........................... ......................10
CMOS and CCD in Digtal Imaging, the Digital Cameras. ......................... .........................11
Other Microwave Devices and Their Applications.......................... ........................... ................13
Conclusion .......................... ........................... ........................... ........................... .....................14
References.................................................................................................................................15
Telecommunication: The Major Applicant of Microwave Devices .................... .................15
Silicon Based Microwave Devices in The Field of Military................................................15
CCD: The Imaging Devices ......................... .......................... ........................... .................15
Other Microwave Devices and Their Applications ........................... ........................... .......15
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Introduction of Silicon-based Microwave Devices Application
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Preface
The explosion of technology development revolutionary not only improves the existing
technology but also the world living. Today, we can see people smiling in front of machine, laugh
in front of them, communicate with millions of people at one time and offices become smaller
and smaller. These are all the advantages of the application of sciences, the technology.
Telecommunication has brought people closer as close as nail and finger. Digital world
has brought the entertainment in living and make the life easy rapidly. The world is not complete
if there are no security and safety. Military division is become stronger and futuristic.
Beside conventional electronics, microwave is an alternative. The features of microwave
application have brought the revolutionary of electronics world. It brings the world that the
worlds never think of. The secret behind these are the component or devices used. This paper will
try to break the secret and tell the truth of behind the usefulness of microwave technology.
Zulakmar Hazwan , Lwando Ziqhu and Low Chun Keat are the students of Multimedia
University, Cyberjaya, Selangor, Malaysia. This paper is written as one of the course work
requirement. Lwando focuses on telecommunication, Zulakmar focuses on Digital Imaging and
Low Chun Keat focuses on military.
Thank you to our God for giving us a great chance to learn by completing this
coursework. We would like to give our highest appreciation to our lecturers, Dr. Vivekanand
Misra and Mr. Gobi a/l Vethrathnam. Thank you for helping us in accomplishing this
coursework. Thank you also to all other people who are involved in this coursework directly and
indirectly.
Zulakmar Hazwan , Lwando Ziqhu & Low Chun Keat
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Introduction of Silicon-based Microwave Devices Application
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Introduction of Silicon-based Microwave Devices Application
use in Telecommunication, Military and Digital Imaging.
by Zulakmar Hazwan , Lwando Ziqhu & Low Chun Keat
Abstract
Microwave is the waves that travel at the speed of light (186, 282 miles per second) and very
short in wavelength are called microwave. It is very powerful since it can travel millions of miles
through the emptiness of space. In other words, it do not need any medium to propagate or travel.
This is due to the wave itself carries energy (stored energy in motion). In frequency spectrum, the
microwave is placed between 2.45GHz to 13GHz. The devices are used for microwave spectrum
range are specially design and fabricated. This paper is explaining briefly the application of
silicon-based microwave devices in telecommunication, military, and consumer electronics
(digital imaging).
The History of Microwave
Microwave research and development started as early in 1940s when microwave technology was
found. The American physicist who contributes to the development of radar is known, as the
Microwave Technology Founder is Sir William Webster Hansen. He developed the Klystron, a
vacuum tube essential to radar technology (1937). Based on amplitude modulation of an electron
beam, it permits the generation of powerful and stable high-frequency oscillations (microwave). It
revolutionized high-energy physics and microwave research and led to airborne radar. The
klystron also has been used in satellite communications, airplane and missile guidance systems,
and telephone and television transmission.
It is clear from the history; generally the microwave devices are used in some area of
technology, such as telecommunication, consumer electronics and military. Nowadays, the
microwave devices application is extend more, the microwave device are also used in aerospace
technology. As additional benefit, the characteristics of silicon material are extending the
application of microwave devices.
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Silicon-Based Microwave Devices
Semiconductor has become very important devices in our daily live today. Semiconductors are
everywhere; from the transistor radio to the fastest supercomputer. Some of the important devices
are silicon-based bipolar and field effect transistors. It is very fundamental to discuss the
characteristic of silicon-based microwave devices before we look into their application..
Silicon or Si has band gap energy 1.16eV at 0°K and 1.12eV at 300°K. The mobility of
Si at 300°K is 450cm2 /Vs for holes and 1600 cm2 /Vs for electrons. Silicon has relative dielectric
constant of 11.8.
Silicon is a semiconductor. The value of band gap energy, which is, placed at the middle
range of energy gap give a few advantages. Silicon is easy to be excited by external energy such
as thermal energy. This gives advantages in changing state rate. Most cases, Silicon is doped to
maximize the advantages and for some specific purposes.
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Introduction of Silicon-based Microwave Devices Application
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Telecommunication: The Major Applicant of Microwave
Devices
An Introduction
Semiconductors are the heart of microprocessor chips as well as transistors. Almost all products
that depend upon electronics, microwaves and RF signals are dependant upon semiconductors.
The main material component of almost all semiconductor chips and transistors is silicon, which
is used because of its crystalline structure. Silicone chips can be turned into a conductor by
adding other materials to it. These materials add certain impurities, which as a classification are
referred to as "doping.
Categories within the Semiconductors family include analog linear devices,
communications and telecommunications chips, data acquisition chips, data converter chips,
digital logic devices, diodes, IC interface devices, IC passive components, IC timing devices,
memory chips, microprocessors and microcontrollers, power management chips, programmable
logic devices, rf and wireless IC chips, sensor chips, thyristors, transistors, and video, audio,
multimedia chips.
The Products and their Use of Microwave Devices
Bluetooth is a wireless specification that defines short-range radio communication between
devices equipped with small, specialized Bluetooth chips. More than just a replacement for
cables, Bluetooth provides a wireless way to connect computers with all types of portable,
electronic devices, forming small, private networks often referred to as PANs (personal area
networks). The T7024 is a monolithic SiGe transmit/receive front-end IC with power amplifier,
low-noise amplifier and T/R switch driver. The T7024 is designed especially for applications in
the 2.4 GHz to 2.5 GHz frequency band. The front end consists of a Power Amplifier, a Low-
Noise Amplifier and a switch driver for a PIN diode antenna switch. The microwave pin diode is
used to activate an external antenna switch.
ParthusCeva is the world's leading licensor of DSP cores and related Platform-level
Intellectual Property (IP) to the semiconductor and electronics industry. ParthusCeva also provide
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Introduction of Silicon-based Microwave Devices Application
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(Gunn, IMPATT, Schottky, and varactor) and/or three terminal devices MESFET, HEMT, or
HBT) integrated with planar antennas such as printed dipoles, microstrip patches, bowties, or slot
antennas. Choosing the adequate configuration, multiple communications can be realized. Using a
tunnel diode, a mixer can be integrated with an antenna, called an “antennaverter”. A traveling
wave antenna can also be used, together with tunnel diodes, to operate as a traveling wave
amplifier, called an “antennafier”. The above are some of the developments in designing Active
integrated antennas. The potential for applications of AIAs is broad. The need for automatic
identification of articles and personnel has grown rapidly in recent years with the increased use of
computerized systems for security and control tasks. The primary limitation of traditional
magnetically encoded cards is the need for physical contact between the card and the reader.
Noncontact identifications systems in which identification can be made at a distance are either
optical (bar code reader) or use radio frequencies. Radio frequency identification (RFID) systems
have several advantages compared to optical systems, such as better penetration of obstructing
materials (e.g. clothing, plastic cover) and easier processing of the identifying signals. In addition,
RFID systems can be used for high-speed data transfers and synchronous read-write operation.
The Broader Perspective
The above mentioned examples and illustrations of silicon (Si) and silicon-germanium (SiGe)
microwave devices in the form of microwave diodes clearly established the idea that microwave
devices are indeed important components in the development and implementation of
communication and telecommunication systems and chips. PIN diodes, Schottky barrier devices,
bipolar diodes and the likes prove to very useful in this effect. From wireless products and
antenna circuitry to fiber-optic communication medium and the popular Bluetooth technology,
microwave devices are applicable in a wide range of communication and telecommunication
systems and devices. Moreover, Silicon-based microwave devices present various advantages
from devices made of other semiconductor materials. The communications and
telecommunications industry and its efficiency have been drastically improved by the
development and development of Silicon microwave devices. With development of suchrevolutionary equipment meant for integrated circuit, the future promised more progressive
development in the field of making communication/telecommunication chips as well as other
fields and industries that require microwave applications.
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Silicon Based Microwave Devices in The Field of Military
Cost efficiency
Applications of advanced microwave and millimeter-wave integrated circuits have long been
dominated by military users. As in so many other areas of electronics, however, price-driven
commercial users are emerging as a significant market force and technology driver. While
continuing to use the highest performance gallium arsenide (GaAs) and indium phosphate (InP)
devices in many applications, we can also anticipate that the military user will try to exploit much
lower cost, dual-use microwave technologies and manufacturing methods. These include the use
of silicon germanium (SiGe); micro-electromechanical switches and phase shifters; low-cost, flip-
chip packaging; microwave photonics; and dual-use, computer-aided engineering tools and
environments for first-pass design success.
For interfacing with the physical world (the job that microwave and millimeter-wave
circuits are asked to do), the first transistor and the last transistor have extraordinary importance,
the first because of noise figure and dynamic range, and the last because of power efficiency and
waveform control. For these reasons, these transistors have seen extraordinary focus and
specialization. Even below one gigahertz, GaAs has often replaced Si for these interface
transistors. Specialized processing coupled with yield maximization has slowed the progress of
monolithic integration. Even after the MIMIC program, and despite a steady progress on
integrating more onto a single chip, hybrid solutions are common and will remain so for the
foreseeable future. Integration is most commonly applied to the transistors between the first and
the last.
In terms of the technology base, there are two "wild card" material systems: indium
phosphide and silicon germanium. InP is at the top of the spectrum. For receivers, InP yields a
few tens of percent lower equivalent noise temperature and has better power added efficiency for
transmitters because the maximum frequency is greater. It is unlikely, however, that without a
technology driver other than millimeter waves, InP would make much progress against the
incumbent GaAs.
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SiGe, at the lower end of the spectrum, presents a similar situation. SiGe has higher
performance than Si and potentially lower cost than GaAs, but that advantage is by itself not yet
compelling. Luckily, in both cases, these upstart technologies have separate technology drivers.
For InP, it is the optoelectronics telecommunication field; for SiGe, it is digital complementary
metal-oxide semiconductors (CMOS). So there is the potential for GaAs to be squeezed out of
applications on the low end by SiGe and the high end by InP. However, this is unlikely to happen
in the next decade. People tend to underestimate the tenacity of an incumbent technology. The
challenger must be compelling, often offering an order-of-magnitude improvement to be adopted,
and further fragmenting an existing market.
Si and Ga in NavyThe Navy and the Department of Defense have increasing needs for electronic devices which
operate at higher frequency, higher power, higher temperature and in harsh environments, for
applications such as sensor components in jet engines or airborne microwave devices. GaN is an
excellent candidate material for such applications, because it is chemically stable at high
temperatures, has good thermal conductivity, a high breakdown field and a large electron
saturation velocity. Consequently, the Division is putting a significant effort into advancing GaN
device technology. GaN and its alloys are currently being studied for applications in field effect
transistors (FET's), in p-n diodes, and as new light sources, particularly in the blue and
ultraviolet.
The Electronic Materials Branch has a solid record of contributions in wide bandgap
semiconductor research, with work on silicon carbide, diamond and the nitrides. Currently the
Branch plays a key role in the advancement of GaN and SiC technologies within the Division by
addressing the essential issues of materials growth and impurity incorporation in both current and
newly-emerging growth techniques.
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CCD: Imaging Devices
An IntroductionSilicon detectors have found in many fields of physical research. Their application extends from
the interaction of leptons, quarks, gauge bosons, and the hunt for particles at the scale of <10E-
20m to investigation of large scales (>10E28m) of the entire universe.
In between these extremes, the Silicon detectors are used in Nuclear Physics,
Crystallography, and Medical for imaging and Mechanical for alignment. In each of the many
applications, they have been modified to fit energy scale, time structure and signal characteristic
for the applications.
One primary reason for the common use of Silicon as detector material is that is a
semiconductor with a moderate band gap of 1.12eV. Searches a different material could replace
Silicon as the semiconductor of choice tracking devices by a lot of engineers and scientist have
not been successful. One reason for the uniqueness of Silicon is its wide technology base and it
has helped to spawn the use of pixel detector such as hybrid, CCD’s and CMOS detectors for
truly applications.
CCD in Imaging Sensor
A charge-coupled device (CCD) is used as image sensor since it is fabricated on high-resistivity
silicon, about 10k-Ohm. According to Stower in his paper published in 1996, the resistivity
characteristic allows for operation of the CCD with the entire 300 micro-metre substrate depleted.
This results in better read to near infrared response. In additions, the CCD has good blue response
when back illuminated.
Andor Technology describes its CCD products DV 401, DV 420 and DV 440, CCD is
used in its product because CCD allow optimized pixel size for high dynamic range. The
resolution is in the range of 13micro-metre to 26 micro-metre. The products are used as
spectroscopy, such as X-ray spectroscopy and measuring ozone, gasses traces.
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CMOS and CCD in Digtal I maging, the Digital Cameras.
CCD comprises photo sites, typically arranged in an X-Y matrix rows and columns. The
photodiode converts light, the photons, into charge, the electrons. Theoretically the number of
electrons collected is proportional to the light intensity. The charges are then read out by each
row of data is moved to separated horizontal charge transfer register. The reading is in serial and
sensed by a charge-to-voltage conversion.
That optimization however, makes integrating other electronics onto the silicon
impractical. Normally CCD is used with clock signal, complicated system integration and it is
power consumption.
However, there is alternative device, which is widely used as imager. The introduction of
CMOS in imaging technology absolutely created a stop point for CCD. But CCD is still used in
Medical and Remote Sensing because there are some performances that CMOS could not
achieved especially in high-speed detection.
As example of a product using CCD, Eastman Kodak Company a few months ago
announced that Olympus Optical Co., Ltd. of Japan has selected an enhanced version of the
Kodak KAF-5101CE charge-coupled device (CCD) image sensor for its new Olympus E-1
Digital Single Lens Reflex (D-SLR) camera system, the first digital camera designed for the
emerging Four Thirds System standard.
In the release documentation, Kodak announce 4 major advantages of application CCD in
their new digital camera:
Image Quality
Leverages Kodak's advanced Full-Frame CCD technology to provide ultra-wide dynamic range
for rendering fine image details in the highlight and shadow areas and excellent color fidelity for
sharp images with brilliant colors;
Speed
4/3-type image sensor enables camera designs with extremely low shutter lag, fast shutter speeds
and rapid read-out for high image burst rates;
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Introduction of Silicon-based Microwave Devices Application
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Size
Designed to match the new Four Thirds System interchangeable lenses resulting in a new class of
camera lenses that are more compact and half the size and weight of the equivalent focal length
lenses for traditional 35 mm cameras for improved portability;
Photosensitivity
Matching the 4/3-type imager and lenses enables wide-angle photography and improved
sensitivity (effective ISO) for image capture in dimly lit photographic condition.
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Other Microwave Devices and Their Applications
The table below shows the others application of microwave devices. There are a few types of
material used, depend to the requirements and the purpose. In the table, there are applications,
which allow silicon-based microwave devices to be used.
Devices Applications Advantages
Transistor L-band trasmitter for telemetry systems
and phased array radar system.
L- and S-band trasmitter for
communication system
Low cost, low power supply,
reliable, high CW power output, light
weight
TED C- , X- and Ku-band ECM amplifiers for
wideband systems
X- and Ku-band transmitter for radar
system such as traffic control
Low power supply(12V), low cost,
light weight, reliable, low noise, high
gain.
IMPATT Transmitter for millimeter-wave
communications systems
Low power supply, low cost,
reliable, high CW power output, light
weight
TRAPATT S-Band pulsed transmitter for phasedarray radar system
High peak and average power,reliable, low power supply, low cost
BARITT Local oscillators in communication and
radar receivers
Low cost, low power supply,
reliable, low noise
Table: Adapted from Microwave Devices and Circuit, Third Edition.
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Conclusion
Silicon-based microwave devices are widely used in communication system such as cellular
communication, radar system, GPRS, and CDMA. In military, the application of communication
system was brought the microwave devices into the field and also for other some applications. On
the other hand, application of microwave devices in consumer electronics was extend the
limitation of conventional electronics.
Generally, the advantages of silicon-based microwave devices application are, silicon-
based devices are more reliable, low cost and need low power supply. However, at the output,
these devices can give high power.
Silicon-based microwave devices have to be developing wide. All the fields and
industries should take this golden opportunity. The advantages of silicon-based microwave
devices not only can cause the industry gain more profit but the people will also experience the
advantages.
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References
Telecommunication: The Major Applicant of Microw ave Devices
1. Partusceva , http://www.parthusceva.com/products/navstream_gps/index.html, Available,
2003
2. Microsemi, Microsemi Launches Wireless LAN - 5-6GHz Antennma Switch Technology ,
News, 22 August 2001
3. Atmel, http://www.atmel.com, Available, 2003.
4. Martin Kaleja , Active Integrated Antennas for Sensor and Communication Applications,
Technischen Universität München
5. Mark D. McDonald, A Silicon Bipolar Chipset for Fiber-optic Applications to 2.5Gb/s ,
IEEE Jurnal, June 1991
Silicon Based Microwave Devices in The Field of Military
1. Lance A. Glasser, Breakthroughs in Affordability of Military Microwave Systems Defense
Advanced Research Projects Agency Arlington, Virginia
2. Characterization of Wide Bandgap Semiconductors, US Navy Publication.
CCD: The Imaging Devices
1. Hartmut F.-W. Sadrozinski , Application of Silicon Detector , University of California ,
2000.
2. R.J. Stover & M. Wei, Technical Digest , Fabricated On High-Resistivity Silicon,
University of California Observatories/Lick Observatory, 1996.
3. Kodak Official Site, http://www.kodak.com , Available, 2003.
Other Microwave Devices and Their Applications
1. Samuel Y. Liao, Microwave Devices and Circuits, Third Edition, Prentice Hall
International Inc, Published in 1990.