Download - EU update 1
10th ITPA TG Meeting on Diagnostics10-14 April 06, Moscow
Radiation Effects WG
Eric Hodgson (presented by Benoit Brichard)Input from JA: T.Nishitani, T.Shikama. RF: A. Krasilnikov, K.Vukolov. US: L.Snead
• Last meeting of Radiation Experts at 15th IEA Workshop held during ICFRM-12 (Dec 05) in Santa Barbara. 18 people attended the 4 1/2 h meeting.
• Updates on activities from EU, JA, RF, and US.
• 6-7 April EFDA Ceramics Irradiation meeting
• Now have ITER, but still waiting new structure for common tasks.
EU update 1
EU laboratories involved in TW4/6-IRRCER programmes
AEUL Riga Ferroelectric bolometers
CEA Cadarache NBI insulation
CIEMAT Madrid H/D/T effects, windows, bolometers, T/RIEMF , RIC/RIED
IPP.CR Prague Hall probes
FZK Karlsruhe H/D/T effects, ECRH windows
MEdC Bucharest Windows, fibres, optoelectronic components
ÖAW Vienna Ferroelectric bolometers
SCK/CEN Mol Bolometers, fibres, T/RIEMF, RIED
EU update 2
• MI cables (CIEMAT, SCK/CEN)
RIEMF - serious problem - difficult to separate Rad. and T effects
TIEMF (centre conductor) detailed study (CIEMAT, SCK/CEN)
EMF (V) T. No annealing of the effect observed up to 550 C
Not due to geometry
Combined effect of inhomogenieties, transmutation/dpa and temperature gradient
Need more data and experimental test To fully understand further the combined RIEMF/TIEMF effect
Damage to MI cable Cu core
Impurity analysis underway
“Normal” copper wire
copper core in MI cable !
Severe damage in Cu core extracted from MI cable
Cause of TIEMF ?
No TIEMF effect observed in “normal” copper wire
-20
-15
-10
-5
0
5
10
15
20
29-11-05 06-12-05 13-12-05 20-12-05Date
core
-to-
core
vol
tage
(µV
) .
data
model
AISI304L
Core to Core induced voltage
Va
10 kΩ
10 kΩ
Va
b
Vb
Is it radiation damage related (Dpa) ?
Cu
-10
0
10
20
30
40
50
29-11-05 06-12-05 13-12-05 20-12-05Date
core
-to-
core
vol
tage
(µV
) .
data
model
In-core irradiation in BR2
Transmutation ?
Change of seebeeck coefficient
EU update 3
• Bolometers
(AEUL, CIEMAT, IPP, ÖAW, SCK/CEN)
JET resistance type: Pt on Alumina and AlN
n irradiated - SCK/CEN --->0.01 dpa, 400 CPIE: Pt and substrates OKProblem: electrical contacts
Ferroelectric type:
PbZrO3 beingprepared
Pt on Al2O3 and AlN
• Double Pt meanders• Absorber, reverse side• First check T and
ionization effects
Move to neutron irradiation (BR2)
Good linearity of sensor
No change in resistance at 350°C up to 10-3 dpa
350
390
430
470
510
550
9/03/05 10/03/05 11/03/05 12/03/05
Res
ista
nce
, Oh
m
0
100
200
300
400
500
600
Tem
per
atu
re, C
r1 r2 T1 T2
Pt/AlN
Pt/Al2O3
T°C
Problem with electrical contact that not withdstand high temperature
RIED in Al2O3
I - centre sample 12
50150250350
-13.00
-12.00
-11.00
-10.00
1.00E-03 2.00E-03 3.00E-03 4.00E-03 Temp. 1/T (°K)
log. I (A)
I-Centre before irr.
I-Centre after irr.
°C
• 4.3 10-3 dpa => small differences (a few pA) are observed.
= > start of microstructural analysis
• Irradiation facility fully operational
– Active vaccuum, 10-2 mbar – Active Heating up to 400°C
Pt on Si3N4
• IPP bolometer - “SiN” for mica
• First check T and ionization effects --->No adverse effects
Also Pt on Si3N4 (IPP)
EU update 4
• Hall probes (IPP.CR, Ukraine)
InSb Hall devices (MSL, Lviv, Ukraine) showed acceptableperformance up to 10-3 dpa (70% of original sensitivity)But upper temperature for operation is low (< 100C)
7 new sensors based on solid solutions of InSb and InAs and similarmaterials with potential high T survival ( > 200°C )
1st in-reactor tests completed -->But none survived beyond 10-3 dpa at 160-190 C.
Problems: electrical connections, solder joints, thin wire insulation ....
EU update 5
• Optical properties (CIEMAT, MEdC, SCK/CEN)
Enhanced surface degradation (optical and electrical)from low energy H and He implantation. General problem ?
Mirrors: Coatings for extended UV reflectivity
No suitable UV fibres, and UV absorption extends to visibleH loading has limitations
Windows: High energy proton irradiations => for low dose ≈ n
Window materials Surface degradation
10-6
10-4
10-2
100
102
104
1014 1015 1016 1017 1018
Ele
ctri
cal c
urre
nt (
µA
)
Dose (ions/cm2)
450 ºC
250 ºC
50 ºC
0
0.5
1
1.5
2
500 1000 1500 2000 2500 3000
Op
tica
l ab
sorp
tion
Wavelength (nm)
450 ºC
250ºC
50 ºC
Ele
ctri
cal c
urre
nt (
µA
)
Opt
ical
Abs
orpt
ion
(cm
-1)
XPS analysis shows extreme O lossResults => Si and SiO rich surface zoneGeneral problem for insulator surfaces ? 0
2
4
6
8
10
12
14
16
0.5 1 1.5 2
Energy (keV)
Si
O
Unimplanted
450ºC
250ºC
50 ºC
A.U
Low energy He ion bombardment of KS-4V Produces enhanced absorption and surface electrical conductivity
Coated mirrors
Work on mirror coatings for general protection and LOCA
SiO2 (SiO) and alumina MgF (HfO2) for extended UV
0
20
40
60
80
100
500 1000 1500 2000 2500
UV enhanced (Newport)
Newport as recNewport irrad 40MGy 170ºC N
2%
R
Wavelength (nm)
0
20
40
60
80
100
500 1000 1500 2000 2500
Visible enhanced (Coherent)
Coherent as rec
Coherent irrad 40MGy 170ºC N2
% R
Wavelength (nm)
No change when irradiated in N2 atmosphere but …
No protection against LOCA
• Radiation + humidity
• Degradation attacks the Al coating even when protected
• Enhanced diffusion and reactions (Al(OH)3)
• Swelling SiO -> SiO2
Usually, SiO2 better resistance against corrosion
EU update 6
• T diffusion / effects (CIEMAT, FZK)
Windows the primary barrier to confine tritium
Modelling on effects of H isotopes (T) in diamond indicates strongtrapping.
In-situ radiation enhanced diffusion in different materials is now beingmeasured.
Work starting on effects of H isotopes on physical properties
Radiation enhanced diffusion
• Disc samples electron irradiated on vacuum side
• H/D on other side• High sensitivity leak
detector for diffusion• Pressure sensors for
absorption
Disc for analysiselectrons
H/D chamber
EU update 7
• EFDA Ceramics Irradiation Meeting 6-7 April 06
2 day meeting with presentations of all on-going EU TW5/6 tasks
Information / presentations shortly available
New data base task / specifications discussed
JA update
JAEA, NIFS, Tohoku IMF (Data from T.Shikama and T Nishitani )
RIC - stable insulators for blanket applications. Data for gamma, and fission and fusion neutrons
Fast ion conductor behaviour during reactor irradiation
450 nm radioluminescence in silicas - band suppression with OH content (full agreement with earlier data)
Radiation and temperature measurements using luminescence
DT neutronGamma ray
Fissionreactor
▲ Y2O3
◆ CaZrO3
● Er2O3
0 100 200 300 400 500 60010- 14
10- 13
10- 12
10- 11
10- 10
10- 9
10- 8
10- 7
10- 6
10- 5
10- 4
Condu
ctivi
ty (
S/m
)
Temperature (oC)
Under irradiation
CaZrO3 (8.8 Gy/s, Bias: +250V)
RIC Withoutirradiation
0 100 200 300 400 500 60010- 14
10- 13
10- 12
10- 11
10- 10
10- 9
10- 8
10- 7
10- 6
10- 5
10- 4
Condu
ctivi
ty (
S/m
)
Temperature(oC)
Y2O3 (5.1 Gy/s, Bias: +250V)
Under irradiation
Withoutirradiation
RIC
Teruya Tanaka (NIFSTeruya Tanaka (NIFS) ) on RIC of MHD on RIC of MHD insulators for blanket insulators for blanket applicationapplication
Bun TsuchiyaBun Tsuchiya JMTR irradiation: H-inplanted in ceramic material JMTR irradiation: H-inplanted in ceramic material
Conclusion: RIC enhancement in H-inplanted materialConclusion: RIC enhancement in H-inplanted material
0
200
400
600
800
1000
1.5 MeV H+ 5 x 1017 H/m2
0 ppm OH (T-2630) 200 ppm OH (T-2630) 800 ppm OH (T-2630)
Nor
mal
ized
lum
ines
cenc
e in
tens
ity
(arb
itra
ry u
nits
)
Under successive ion irradiation 2.7 eV: B2αbands in low-OH silica1.9 eV: NBOHC in high-OH silica
At very low fluences
3.1 eV: Intrinsic B2βbands in low-OH silica
Shinji NagataShinji Nagata on radioluminescence of silica on radioluminescence of silica
Luminescence decrease with OH content
1.5 2.0 2.5 3.0 3.5 4.00
200
400
600
800
10001.5 MeV H
+ 1 x 10
19 H/m
2
0 ppm OH 200 ppm OH 800 ppm OH
Photon energy (eV)
RF update
FORC, Kurchatov, TRINITI (Data from Anatoli Krasilnikov)
• Fibres – RL and RIA
Irradiations at IR-8 (Kurchatov)
At 3x1013 n/cm2/s, 400 Gy/s to 1018 n/cm2, 16 MGy
Fibres from FORC, Heraeus, Mitsubishi, and Fijukura
H loaded fibres give best results (lowest RL)
RL reactor power (=> nuclear radiation monitor)
NO. FIBERS TYPE The manufacturer COATING MAIN IMPURITIES
1 KU-1 FORC ALUMINIUM OH~800 PPM, CL~140 PPM 2 SSU HERAEUS QUARZGLAS GMBH &
CO POLYMER OH~800 PPM
3 STU HERAEUS QUARZGLAS GMBH & CO
POLYMER OH~20 PPM
4 SILICA, FABRICATED, PROBABLY, BY THE
VAD- TECHNOLOGY
MITSUBISH POLYMER OH~800 PPM, CL~140 PPM
5 SILICA, FABRICATED, PROBABLY, BY THE
VAD- TECHNOLOGY
FUJIKURA POLYMER OH<20 PPM, CL- PROBABLY, HIGH
CONCENTRATION
6
KU-1 FORC ALUMINIUM OH~800 PPM, CL~140 PPM, H2-LOADED
7 KS-4V-H2 FORC ALUMINIUM OH 0.2 PPM, CL 20 PPM, H2-LOADED
8 Silica, fabricated by the VAD - technology
The silica core rod was fabricated in the Tokyo Technology Institute. The perform and the fiber were fabricated in FORC
ALUMINIUM OH~3 PPM, CL~20 PPM, H2-LOADED
H2Loaded
Radiation induced luminescence spectra. Figures denote fibre numbers according to Table 1. Fast neutron fluence - 4.71017 n/см2, gamma-dose –7.2 МGy(Si), fast neutron fluxe -2.81013 n/см2 s, gamma-dose rate –400 Gy/s.
0.0E+00
1.0E-10
2.0E-10
3.0E-10
380 480 580 680
nm
RL
capa
city
, W/(n
m*m
)
1
2
3
4
6,7,8
Luminescence spectra corrected for re-absorption
IR-8 reactor irradiation
A.V. Bodarenko & al., instru. and exp. tech., 2006, Vol. 49, No2, pp 190-198
1
100
10000
0 100 200Irradiation time, h
Rea
cto
r p
ow
er,
kW1.E-14
1.E-13
1.E-12
1.E-11
1.E-10
RL
cap
acit
y, W
/(n
m*m
)
Time evolutionLuminescence spectrum
H2-loaded fibres
US update
ORNL (Data from L. Snead, D. Swain, D. Rasmussen, K. Leonard)
“Long ago” US was active during ITER CDA, on RIC in MI cables, RIED, windows
Now beginning activity once again:
ICRH insulators, thermal conductivity degradation, multilayer mirrors
Ion Cyclotron Insulators Radiation Effects
• Five ceramics (alumina in polycrystal and single crystal form)
– Al2O3 (Wesgo Al995, Deranox 999*); Al2O3 (Kyocera single crystal),
– BeO (Thermalox),
– AlN (Tokuyama SH-15),
– Si3N4 (Kyocera SN-235P),
– single crystal MgAl2O4 (Princeton Scientific Corp.)
• HFIR fission reactor irradiation at 80-100oC: 0.001, 0.01, 0.1 dpa (1018-1020 n/cm2, E>0.1 MeV)
• Pre- and post-irradiation testing of dielectric properties (dielectric constant, loss tangent at ~100 MHz) and thermal conductivity
*Only one Deranox 999 specimen irradiated, at 0.1 dpa (material supplied by Eric Hodgson)
Theory is being developed to better understand defects
• Thermal conductivity in ceramic materials can be described as a summation of various scattering centers for phonons as :
K (T) 1
1
Ku(T)
1
Kgb (T)
1
Kd 0
1
Krd
• The appropriateness of addition of thermal resistances is suggested by the addition of inverse relaxation times to obtain the combined relaxation time.• Above 1/3 of the Debye temperature defect scattering is temperature independent.
Umklapp(phononScattering)
boundaries
intrinsicdefects
radiationdefects
1
Krd
1
K irr
1
Kunirr
Thermal defect resistance
Thermal Conductivity of Ceramics for Diagnostic Application
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0 200 400 600 800 1000 1200
Sapphire
Coors AD-998
Wesgo AL-998
Sapphire
Coors AD-998
Wesgo AL-998
Def
ect
Res
ista
nce
1/K rd (
m-W
/K)
Annealing Temperature (C)
0.001 dpa
0.01 dpa
More complex defects formed during higherdose irradiation are more thermally stable.
60°C Neutron Irradiated Alumina
Performance of Diaelectric Mirrors Under Irradiation
• Work just starting.
• Purpose : Development of multilayer dielectric and performance of these materials under neutron and gamma irradiation.
• Approach: Fabrication of mirror structures without use of silica containing layers.
- substrate materials, sapphire and silicon carbide
- layer materials:
Alumina
Magnesium aluminate spinel
Hafnium Oxide
Magnesium Oxide
• Intermediate dose irradiation to be carried out in June 06. (0.01 to ~ 1 dpa)