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Any and all SANYO products described or contained herein do not have specifications that can handleapplications that require extremely high levels of reliability, such as life-support systems, aircraftscontrol systems, or other applications whose failure can be reasonably expected to result in seriousphysical and/or material damage. Consult with your SANYO representative nearest you before usingany SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or otherparameters) listed in products specifications of any and all SANYO products described or containedherein.
PNP/NPN Epitaxial Planar Silicon Transistors
160V/140mA High-Voltage Switchingand AF 100W Predriver Applications
Ordering number:ENN779D
2SA1209/2SC2911
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25C
Electrical Characteristics at Ta = 25C
Package Dimensionsunit:mm
2009B
[2SA1209/2SC2911]
Features Adoption of FBET process.
High breakdown voltage.
Good linearity of hFE and small Cob.
Fast switching speed.
retemaraP lobmyS snoitidnoC sgnitaR tinU
egatloVesaB-ot-rotcelloC V OBC 081)( V
egatloVrettimE-ot-rotcelloC V OEC 061)( V
egatloVesaB-ot-rettimE V OBE 5)( V
tnerruCrotcelloC IC 041)( Am
)esluP(tnerruCrotcelloC I PC 002)( Am
noitapissiDrotcelloC PC1 W
01 W
erutarepmeTnoitcnuJ jT 051
erutarepmeTegarotS gtsT 051+ot55 C
C
1 : Emitter2 : Collector3 : BaseSANYO : TO-126
*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Continued on next page.
Tc=25C
knaR R S T
h EF 002ot001 082ot041 004ot002
8.0
4.0
7.
0
11.
0
1.
5
15.
5
3.
01.6
0.8
0.8
0.6
0.5
2.7
4.8
2.4
1.
2
1 2 3
3.0
retemaraP lobmyS snoitidnoCsgnitaR
tinUnim pyt xam
tnerruCffotuCrotcelloC I OBC V BC I,V08)(= E 0= 1.0)( A
tnerruCffotuCrettimE I OBE V BE I,V4)(= C 0= 1.0)( A
niaGtnerruCCD hEF
VEC
I,V5)(=C
Am01)(= *001 *004
tcudorPhtdiwdnaB-niaG fT V EC I,V01)(= C Am01)(= 051 zHM
ecnaticapaCtuptuO C bo V BC zHM1=f,V01)(= 0.3)0.4( Fp
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2SA1209/2SC2911
Continued from preceding page.
retemaraP lobmyS snoitidnoCsgnitaR
tinUnim pyt xam
egatloVnoitarutaSrettimE-ot-rotcelloC V )tas(EC IC I,Am05)(= B Am5)(=70.0)41.0(
3.0)4.0(
V
emiTNO-nruT t no tiucriCtseTdeificepseeS 1.0 s
emiTllaF tf tiucriCtseTdeificepseeS 1.0 s
emiTegarotS t gts tiucriCtseTdeificepseeS 5.1 s
ITR03021
IC -- VCE
0 --10 --20 --30 --40 --50 --60 --70 0 10 20 30 40 50 60 700
--20
--40
--60
--80
--100
--120
--140
0
--20
--40
--60
--80
--100
--120
--140
20
0
40
60
80
100
120
140
0
20
40
60
80
100
120
140
ITR03022
IC -- VCE
ITR03024ITR03023
--0.4 --0.6 --0.8 --1.0--0.20 0.4 0.6 0.8 1.00.20
IC -- VBE
--0.1mA
--0.2mA
--0.3mA
--0.4m
A--0.
5mA--0
.6mA
IB=0
2SA1209 2SC2911
0.1mA
0.2mA
0.3mA
0.4mA
0.5m
A
0.6mA
IB=0
IC -- VBE2SA1209 2SC2911
CollectorCu
rrent,IC
mA
CollectorCurrent,IC
mA
Collector-to-Emitter Voltage, VCE V
CollectorCu
rrent,IC
mA
Collector-to-Emitter Voltage, VCE V
Base-to-Emitter Voltage, VBE V
CollectorCurrent,IC
mA
Base-to-Emitter Voltage, VBE V
Switching Test Circuit
INOUT
20V
50
3k
5k
2k
1F 1F
--2V
IC=10IB1=--10IB2=10mA
+ +
(For PNP, the polarity is reversed.)
RB
IB1
IB2
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2SA1209/2SC2911
Cob -- VCB
ITR03030ITR03029
2 3 5 7 75--10--1.0 --1002 3
10
1.0
2
3
2
3
7
5
5
7
100
2 3 5 7 75101.0 1002 3
10
1.0
2
3
2
3
7
5
5
7
100
--0.1
--1.0
3
3
2
7
5
2
5
7
0.1
1.0
3
2
7
5
3
5
7
Cob -- VCB
ITR03028
fT -- ICfT -- IC
100
10
3
2
3
2
5
7
ITR03027
ITR03025
hFE -- IC
5 775 32 5 732 2--10 --100--1.0
5 732 5 732 2--10 --100--1.0
100
10
3
2
3
2
5
7
5 732 5 732 210 1001.0
1000
5
3
7
100
10
2
5
3
7
2
5 775 32 5 732 210 1001.0
1000
5
3
7
100
10
2
5
3
7
2
hFE -- IC
ITR03026
2SA1209
VCE=--5V2SC2911
VCE=5V
2SC2911
VCE=10V2SA1209
VCE=--10V
2SA1209f=1MHz
VCE(sat) -- ICVCE(sat) -- IC
2SC2911f=1MHz
2SC2911
IC/ IB=102SA1209
IC/ IB=10
CommonEmitterDC
CurrentGain,hFE
Collector Current, IC mA
CommonEmitterDC
CurrentGain,hFE
Collector Current, IC mA
Gain-BandwidthProduct,fT
MHz
Collector Current, IC mA
Gain-BandwidthProduct,fT
MHz
Collector Current, IC mA
OutputCapacitance,CobpF
Collector-to-Base Voltage, VCB -- V
OutputCapacitance,CobpF
Collector-to-Base Voltage, VCB -- V
Collector-to-Emitter
SaturationVoltage,VCE(sat)V
Collector-to-Emitter
SaturationVoltage,VCE(sat)V
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2SA1209/2SC2911
VBE(sat) -- IC
ITR03033
--1.0 --105 7 --10072 2 233 5 75 1.0 105 7 10072 2 233 5 75
0 20 40 60 80 100 120 160140
VBE(sat) -- IC
PC -- TaITR03034
ITR03036
2SA1209
IC/ IB=10
--1.0
--10
3
7
5
3
2
5
7
A S O
ITR03035
10 10072 3 5 72 3 5 2 3 5
10
2
3
5
7
100
2
3
5
2
3
5
7
0
0.2
0.4
0.8
0.6
1.2
1.0
1.0
10
3
5
7
5
3
2
7
2SC2911
IC/ IB=10
2SA1209 / 2SC2911
1ms1s
DCoperation
ICP=200mA
IC=140mA
Noheatsink
0 20 40 60 80 100 120 160140
PC -- Tc
ITR03037
0
2
4
8
6
12
10
2SA1209 / 2SC2911
2SA1209 / 2SC2911
DC Single pulse
Collector Current, IC mA
Base-to-Emitter
SaturationVoltage,VBE(sat)V
Collector Current, IC mA
Base-to-Emitter
SaturationVoltage,VBE(sat)V
(For PNP, minus sign is omitted.)
CollectorCurrent,IC
m
A
Collector-to-Emitter Voltage, VCE V
CollectorDissipation,PC
W
Ambient Temperature, Ta C
CollectorDissipation,PC
W
Case Temperature,Tc C
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Specifications of any and all SANYO products described or contained herein stipulate the performance,characteristics, and functions of the described products in the independent state, and are not guaranteesof the performance, characteristics, and functions of the described products as mounted in the customer'sproducts or equipment. To verify symptoms and states that cannot be evaluated in an independent device,the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures couldgive rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,or that could cause damage to other property. When designing equipment, adopt safety measures sothat these kinds of accidents or events cannot occur. Such measures include but are not limited to protectivecircuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described orcontained herein are controlled under any of applicable local export control laws and regulations,such products must not be exported without obtaining the export l icense from the authorit iesconcerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic ormechanical, including photocopying and recording, or any information storage or retrieval system,or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is notguaranteed for volume production. SANYO believes information herein is accurate and reliable, butno guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
2SA1209/2SC2911
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