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Any and all SANYO products described or contained herein do not have specifications that can handleapplications that require extremely high levels of reliability, such as life-support systems, aircraftscontrol systems, or other applications whose failure can be reasonably expected to result in seriousphysical and/or material damage. Consult with your SANYO representative nearest you before usingany SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or otherparameters) listed in products specifications of any and all SANYO products described or containedherein.

PNP/NPN Epitaxial Planar Silicon Transistors

160V/140mA High-Voltage Switchingand AF 100W Predriver Applications

Ordering number:ENN779D

2SA1209/2SC2911

( ) : 2SA1209

Specifications

Absolute Maximum Ratings at Ta = 25C

Electrical Characteristics at Ta = 25C

Package Dimensionsunit:mm

2009B

[2SA1209/2SC2911]

Features Adoption of FBET process.

High breakdown voltage.

Good linearity of hFE and small Cob.

Fast switching speed.

retemaraP lobmyS snoitidnoC sgnitaR tinU

egatloVesaB-ot-rotcelloC V OBC 081)( V

egatloVrettimE-ot-rotcelloC V OEC 061)( V

egatloVesaB-ot-rettimE V OBE 5)( V

tnerruCrotcelloC IC 041)( Am

)esluP(tnerruCrotcelloC I PC 002)( Am

noitapissiDrotcelloC PC1 W

01 W

erutarepmeTnoitcnuJ jT 051

erutarepmeTegarotS gtsT 051+ot55 C

C

1 : Emitter2 : Collector3 : BaseSANYO : TO-126

*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Continued on next page.

Tc=25C

knaR R S T

h EF 002ot001 082ot041 004ot002

8.0

4.0

7.

0

11.

0

1.

5

15.

5

3.

01.6

0.8

0.8

0.6

0.5

2.7

4.8

2.4

1.

2

1 2 3

3.0

retemaraP lobmyS snoitidnoCsgnitaR

tinUnim pyt xam

tnerruCffotuCrotcelloC I OBC V BC I,V08)(= E 0= 1.0)( A

tnerruCffotuCrettimE I OBE V BE I,V4)(= C 0= 1.0)( A

niaGtnerruCCD hEF

VEC

I,V5)(=C

Am01)(= *001 *004

tcudorPhtdiwdnaB-niaG fT V EC I,V01)(= C Am01)(= 051 zHM

ecnaticapaCtuptuO C bo V BC zHM1=f,V01)(= 0.3)0.4( Fp

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2SA1209/2SC2911

Continued from preceding page.

retemaraP lobmyS snoitidnoCsgnitaR

tinUnim pyt xam

egatloVnoitarutaSrettimE-ot-rotcelloC V )tas(EC IC I,Am05)(= B Am5)(=70.0)41.0(

3.0)4.0(

V

emiTNO-nruT t no tiucriCtseTdeificepseeS 1.0 s

emiTllaF tf tiucriCtseTdeificepseeS 1.0 s

emiTegarotS t gts tiucriCtseTdeificepseeS 5.1 s

ITR03021

IC -- VCE

0 --10 --20 --30 --40 --50 --60 --70 0 10 20 30 40 50 60 700

--20

--40

--60

--80

--100

--120

--140

0

--20

--40

--60

--80

--100

--120

--140

20

0

40

60

80

100

120

140

0

20

40

60

80

100

120

140

ITR03022

IC -- VCE

ITR03024ITR03023

--0.4 --0.6 --0.8 --1.0--0.20 0.4 0.6 0.8 1.00.20

IC -- VBE

--0.1mA

--0.2mA

--0.3mA

--0.4m

A--0.

5mA--0

.6mA

IB=0

2SA1209 2SC2911

0.1mA

0.2mA

0.3mA

0.4mA

0.5m

A

0.6mA

IB=0

IC -- VBE2SA1209 2SC2911

CollectorCu

rrent,IC

mA

CollectorCurrent,IC

mA

Collector-to-Emitter Voltage, VCE V

CollectorCu

rrent,IC

mA


Base-to-Emitter Voltage, VBE V

CollectorCurrent,IC

mA

Base-to-Emitter Voltage, VBE V

Switching Test Circuit

INOUT

20V

50

3k

5k

2k

1F 1F

--2V

IC=10IB1=--10IB2=10mA

+ +

(For PNP, the polarity is reversed.)

RB

IB1

IB2

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2SA1209/2SC2911

Cob -- VCB

ITR03030ITR03029

2 3 5 7 75--10--1.0 --1002 3

10

1.0

2

3

2

3

7

5

5

7

100

2 3 5 7 75101.0 1002 3

10

1.0

2

3

2

3

7

5

5

7

100

--0.1

--1.0

3

3

2

7

5

2

5

7

0.1

1.0

3

2

7

5

3

5

7

Cob -- VCB

ITR03028

fT -- ICfT -- IC

100

10

3

2

3

2

5

7

ITR03027

ITR03025

hFE -- IC

5 775 32 5 732 2--10 --100--1.0

5 732 5 732 2--10 --100--1.0

100

10

3

2

3

2

5

7

5 732 5 732 210 1001.0

1000

5

3

7

100

10

2

5

3

7

2

5 775 32 5 732 210 1001.0

1000

5

3

7

100

10

2

5

3

7

2

hFE -- IC

ITR03026

2SA1209

VCE=--5V2SC2911

VCE=5V

2SC2911

VCE=10V2SA1209

VCE=--10V

2SA1209f=1MHz

VCE(sat) -- ICVCE(sat) -- IC

2SC2911f=1MHz

2SC2911

IC/ IB=102SA1209

IC/ IB=10

CommonEmitterDC

CurrentGain,hFE

Collector Current, IC mA

CommonEmitterDC

CurrentGain,hFE


Gain-BandwidthProduct,fT

MHz


Gain-BandwidthProduct,fT

MHz


OutputCapacitance,CobpF

Collector-to-Base Voltage, VCB -- V

OutputCapacitance,CobpF

Collector-to-Base Voltage, VCB -- V

Collector-to-Emitter

SaturationVoltage,VCE(sat)V

Collector-to-Emitter

SaturationVoltage,VCE(sat)V

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2SA1209/2SC2911

VBE(sat) -- IC

ITR03033

--1.0 --105 7 --10072 2 233 5 75 1.0 105 7 10072 2 233 5 75

0 20 40 60 80 100 120 160140

VBE(sat) -- IC

PC -- TaITR03034

ITR03036

2SA1209

IC/ IB=10

--1.0

--10

3

7

5

3

2

5

7

A S O

ITR03035

10 10072 3 5 72 3 5 2 3 5

10

2

3

5

7

100

2

3

5

2

3

5

7

0

0.2

0.4

0.8

0.6

1.2

1.0

1.0

10

3

5

7

5

3

2

7

2SC2911

IC/ IB=10

2SA1209 / 2SC2911

1ms1s

DCoperation

ICP=200mA

IC=140mA

Noheatsink

0 20 40 60 80 100 120 160140

PC -- Tc

ITR03037

0

2

4

8

6

12

10

2SA1209 / 2SC2911

2SA1209 / 2SC2911

DC Single pulse


Base-to-Emitter

SaturationVoltage,VBE(sat)V


Base-to-Emitter

SaturationVoltage,VBE(sat)V

(For PNP, minus sign is omitted.)

CollectorCurrent,IC

m

A


CollectorDissipation,PC

W

Ambient Temperature, Ta C

CollectorDissipation,PC

W

Case Temperature,Tc C

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Specifications of any and all SANYO products described or contained herein stipulate the performance,characteristics, and functions of the described products in the independent state, and are not guaranteesof the performance, characteristics, and functions of the described products as mounted in the customer'sproducts or equipment. To verify symptoms and states that cannot be evaluated in an independent device,the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures couldgive rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,or that could cause damage to other property. When designing equipment, adopt safety measures sothat these kinds of accidents or events cannot occur. Such measures include but are not limited to protectivecircuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described orcontained herein are controlled under any of applicable local export control laws and regulations,such products must not be exported without obtaining the export l icense from the authorit iesconcerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic ormechanical, including photocopying and recording, or any information storage or retrieval system,or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is notguaranteed for volume production. SANYO believes information herein is accurate and reliable, butno guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of July, 2002. Specifications and information herein are subject to

2SA1209/2SC2911

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