Download - 2n7000
Absolute Maximum RatingsSymbol Parameter Value Units
VDSS Drain to Source Voltage 60 V
ID Continuous Drain Current(@TA = 25°C) 200 mA
IDM Drain Current Pulsed (Note 1) 500 mA
VGS Gate to Source Voltage ±20 V
PDTotal Power Dissipation Single Operation (TA=25°C) 0.4 W
Total Power Dissipation Single Operation (TA=70°C) 3.2 mW
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
TLMaximum Lead Temperature for soldering purpose, 1/8 from Case for 10 seconds. 300 °C
Thermal Characteristics
Symbol ParameterValue
UnitsMin. Typ. Max.
RθJA Thermal Resistance, Junction-to-Ambient - - 312.5 °C/W
2N7000
January, 2003. Rev. 0. 1/6
Features RDS(on) (Max 5 Ω )@VGS=10V
RDS(on) (Max 5.3Ω )@VGS=4.5V Gate Charge (Typical 0.5nC) Maximum Junction Temperature Range (150°C)
General DescriptionThis Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches.
SemiWell Semiconductor
Logic N-Channel MOSFET
Symbol
TO-92
13
2
3. Drain
1. Source
2. Gate
Copyr ight@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
Electrical Characteristics ( TJ = 25 °C unless otherwise noted )
Symbol Parameter Test Conditions Min Typ Max UnitsOff Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 60 - - V
Δ BVDSS/Δ TJ
Breakdown Voltage Temperature coefficient
ID = 250uA, referenced to 25 °C - 48 - mV/°C
IDSS Drain-Source Leakage CurrentVDS = 60V, VGS = 0VVDS = 60V, VGS = 0V, TJ = 125 °C - - 1
1000 uA
IGSSGate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA
Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA
On CharacteristicsVGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - 2.5 V
RDS(ON)Static Drain-Source On-stateResistance
VGS = 10 V, ID = 500mAVGS = 4.5 V, ID = 75mA
--
1.551.9
55.3 Ω
Dynamic CharacteristicsCiss Input Capacitance
VGS =0 V, VDS =25V, f = 1MHz
- 20 25
pFCoss Output Capacitance - 11 14
Crss Reverse Transfer Capacitance - 3 4
Dynamic Characteristicstd(on) Turn-on Delay Time
VDD =30V, ID =200mA, RG =50ΩVGS = 10 V (Note 2,3)
- 4 18
nstr Rise Time - 2.5 15
td(off) Turn-off Delay Time - 17 44
tf Fall Time - 7 24
Qg Total Gate ChargeVDS =30V, VGS =4.5V, ID =200mA
(Note 2,3)
- 0.5 0.65
nCQgs Gate-Source Charge - 0.15 -
Qgd Gate-Drain Charge(Miller Charge) - 0.2 -
Source-Drain Diode Ratings and CharacteristicsSymbol Parameter Test Conditions Min. Typ. Max. Unit.
IS Maximum Continuous Diode Forward Current - - 200 mA
VSD Diode Forward Voltage IS =200mA, VGS =0V (Note 2) - - 1.2 V
※ NOTES1. Repeativity rating : pulse width limited by junction temperature2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%3. Essentially independent of operating temperature.
2/6
0.2 0.4 0.6 0.8 1.0 1.2 1.410-1
100
150
Notes :※
1. VGS = 0V 2. 250µ s Pulse Test
25
I DR, R
ever
se D
rain
Cur
rent
[A]
VSD, Source-Drain voltage [V]0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1.0
1.5
2.0
2.5
3.0
VGS = 4.5V
VGS = 10V
Note : T※ J = 25
RD
S(O
N),
Dra
in-S
ourc
e O
n-R
esis
tanc
e [mΩ
]
ID, Drain Current [A]
0 2 4 6 8 1010-1
100
150oC
25oC-55oC Notes :※
1. VDS = 10V 2. 250µ s Pulse Test
I D, D
rain
Cur
rent
[A]
VGS, Gate-Source Voltage [V]100 101
100
VGSTop : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 VBottom : 3.0 V
Notes :※
1. 250µ s Pulse Test 2. TC = 25
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.20
2
4
6
8
10
12
VDS = 30V
VDS = 48V
Note : I※ D = 200 mA
V GS,
Gat
e-So
urce
Vol
tage
[V]
QG, Total Gate Charge [nC]0 5 10 15 20 25 30
0
10
20
30
40
50
Crss
Coss
Ciss
Notes :※
1. VGS = 0V 2. f=1MHz
Ciss=Cgs+Cgd(Cds=shorted)Coss=Cds+Cgd
Crss=Cgd
Cap
acita
nce
[pF]
VDS, Drain-Source Voltage [V]
3/6
Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage
Fig 4. On State Current vs. Allowable Case Temperature
Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics
2N7000
Fig 1. On-State Characteristics Fig 2. Transfer Characteristics
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
Notes :※
1. VGS = 10 V 2. ID = 500 mA
RD
S(O
N),
(Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
Notes :※
1. VGS = 0 V 2. ID = 250 µ A
BVD
SS, (
Nor
mal
ized
)D
rain
-Sou
rce
Brea
kdow
n Vo
ltage
TJ, Junction Temperature [oC]
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
Fig 8. On-Resistance Variation vs. Junction Temperature
2N7000
4/6
5/6
Fig 10. Switching Time Test Circuit & Waveforms
2N7000
Fig. 9. Gate Charge Test Circuit & Waveforms
Vin
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD( 0.5 rated VDS )
10V
VDS
RL
DUTPulse Generator
Vin
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
Vin
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD( 0.5 rated VDS )
V
VDS
RL
DUTPulse Generator
RG
Vin
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
Vin
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD( 0.5 rated VDS )
10V
VDS
RL
DUTPulse Generator
Vin
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
Vin
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD( 0.5 rated VDS )
V
VDS
RL
DUTPulse Generator
RG
1mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
Charge
VGS
4.5VQg
Qgs Qgd
Charge
VGS
VQg
Qgs Qgd
1mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
1mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
Charge
VGS
4.5VQg
Qgs Qgd
Charge
VGS
VQg
Qgs Qgd
1mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
Dim.mm Inch
Min. Typ. Max. Min. Typ. Max.
A 4.2 0.165
B 3.7 0.146
C 4.43 4.83 0.174 0.190
D 14.07 14.87 0.554 0.585
E 0.4 0.016
F 4.43 4.83 0.174 0.190
G 0.45 0.017
H 2.54 0.100
I 2.54 0.100
J 0.33 0.48 0.013 0.019
2N7000
6/6
TO-92 Package Dimension
1. Source2. Gate3. Drain
A
B
C
G
E
F
D
H J
123
I