Absolute Maximum RatingsSymbol Parameter Value Units

VDSS Drain to Source Voltage 60 V

ID Continuous Drain Current(@TA = 25°C) 200 mA

IDM Drain Current Pulsed (Note 1) 500 mA

VGS Gate to Source Voltage ±20 V

PDTotal Power Dissipation Single Operation (TA=25°C) 0.4 W

Total Power Dissipation Single Operation (TA=70°C) 3.2 mW

TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C

TLMaximum Lead Temperature for soldering purpose, 1/8 from Case for 10 seconds. 300 °C

Thermal Characteristics

Symbol ParameterValue

UnitsMin. Typ. Max.

RθJA Thermal Resistance, Junction-to-Ambient - - 312.5 °C/W

2N7000

January, 2003. Rev. 0. 1/6

Features RDS(on) (Max 5 Ω )@VGS=10V

RDS(on) (Max 5.3Ω )@VGS=4.5V Gate Charge (Typical 0.5nC) Maximum Junction Temperature Range (150°C)

General DescriptionThis Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches.

SemiWell Semiconductor

Logic N-Channel MOSFET

Symbol

TO-92

13

2

3. Drain

1. Source

2. Gate

Copyr ight@SemiWell Semiconductor Co., Ltd., All rights reserved.

2N7000

Electrical Characteristics ( TJ = 25 °C unless otherwise noted )

Symbol Parameter Test Conditions Min Typ Max UnitsOff Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 60 - - V

Δ BVDSS/Δ TJ

Breakdown Voltage Temperature coefficient

ID = 250uA, referenced to 25 °C - 48 - mV/°C

IDSS Drain-Source Leakage CurrentVDS = 60V, VGS = 0VVDS = 60V, VGS = 0V, TJ = 125 °C - - 1

1000 uA

IGSSGate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA

Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA

On CharacteristicsVGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - 2.5 V

RDS(ON)Static Drain-Source On-stateResistance

VGS = 10 V, ID = 500mAVGS = 4.5 V, ID = 75mA

--

1.551.9

55.3 Ω

Dynamic CharacteristicsCiss Input Capacitance

VGS =0 V, VDS =25V, f = 1MHz

- 20 25

pFCoss Output Capacitance - 11 14

Crss Reverse Transfer Capacitance - 3 4

Dynamic Characteristicstd(on) Turn-on Delay Time

VDD =30V, ID =200mA, RG =50ΩVGS = 10 V (Note 2,3)

- 4 18

nstr Rise Time - 2.5 15

td(off) Turn-off Delay Time - 17 44

tf Fall Time - 7 24

Qg Total Gate ChargeVDS =30V, VGS =4.5V, ID =200mA

(Note 2,3)

- 0.5 0.65

nCQgs Gate-Source Charge - 0.15 -

Qgd Gate-Drain Charge(Miller Charge) - 0.2 -

Source-Drain Diode Ratings and CharacteristicsSymbol Parameter Test Conditions Min. Typ. Max. Unit.

IS Maximum Continuous Diode Forward Current - - 200 mA

VSD Diode Forward Voltage IS =200mA, VGS =0V (Note 2) - - 1.2 V

※ NOTES1. Repeativity rating : pulse width limited by junction temperature2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%3. Essentially independent of operating temperature.

2/6

0.2 0.4 0.6 0.8 1.0 1.2 1.410-1

100

150

Notes :※

1. VGS = 0V 2. 250µ s Pulse Test

25

I DR, R

ever

se D

rain

Cur

rent

[A]

VSD, Source-Drain voltage [V]0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

1.0

1.5

2.0

2.5

3.0

VGS = 4.5V

VGS = 10V

Note : T※ J = 25

RD

S(O

N),

Dra

in-S

ourc

e O

n-R

esis

tanc

e [mΩ

]

ID, Drain Current [A]

0 2 4 6 8 1010-1

100

150oC

25oC-55oC Notes :※

1. VDS = 10V 2. 250µ s Pulse Test

I D, D

rain

Cur

rent

[A]

VGS, Gate-Source Voltage [V]100 101

100

VGSTop : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 VBottom : 3.0 V

Notes :※

1. 250µ s Pulse Test 2. TC = 25

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]

0.0 0.2 0.4 0.6 0.8 1.0 1.20

2

4

6

8

10

12

VDS = 30V

VDS = 48V

Note : I※ D = 200 mA

V GS,

Gat

e-So

urce

Vol

tage

[V]

QG, Total Gate Charge [nC]0 5 10 15 20 25 30

0

10

20

30

40

50

Crss

Coss

Ciss

Notes :※

1. VGS = 0V 2. f=1MHz

Ciss=Cgs+Cgd(Cds=shorted)Coss=Cds+Cgd

Crss=Cgd

Cap

acita

nce

[pF]

VDS, Drain-Source Voltage [V]

3/6

Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage

Fig 4. On State Current vs. Allowable Case Temperature

Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics

2N7000

Fig 1. On-State Characteristics Fig 2. Transfer Characteristics

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

Notes :※

1. VGS = 10 V 2. ID = 500 mA

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes :※

1. VGS = 0 V 2. ID = 250 µ A

BVD

SS, (

Nor

mal

ized

)D

rain

-Sou

rce

Brea

kdow

n Vo

ltage

TJ, Junction Temperature [oC]

Fig 7. Breakdown Voltage Variation vs. Junction Temperature

Fig 8. On-Resistance Variation vs. Junction Temperature

2N7000

4/6

5/6

Fig 10. Switching Time Test Circuit & Waveforms

2N7000

Fig. 9. Gate Charge Test Circuit & Waveforms

Vin

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD( 0.5 rated VDS )

10V

VDS

RL

DUTPulse Generator

Vin

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

Vin

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD( 0.5 rated VDS )

V

VDS

RL

DUTPulse Generator

RG

Vin

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

Vin

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD( 0.5 rated VDS )

10V

VDS

RL

DUTPulse Generator

Vin

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

Vin

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD( 0.5 rated VDS )

V

VDS

RL

DUTPulse Generator

RG

1mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

4.5VQg

Qgs Qgd

Charge

VGS

VQg

Qgs Qgd

1mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

1mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

4.5VQg

Qgs Qgd

Charge

VGS

VQg

Qgs Qgd

1mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Dim.mm Inch

Min. Typ. Max. Min. Typ. Max.

A 4.2 0.165

B 3.7 0.146

C 4.43 4.83 0.174 0.190

D 14.07 14.87 0.554 0.585

E 0.4 0.016

F 4.43 4.83 0.174 0.190

G 0.45 0.017

H 2.54 0.100

I 2.54 0.100

J 0.33 0.48 0.013 0.019

2N7000

6/6

TO-92 Package Dimension

1. Source2. Gate3. Drain

A

B

C

G

E

F

D

H J

123

I