effect of o2+, h2++ o2+, and n2++ o2+ ion-beam irradiation on the field emission properties of...
TRANSCRIPT
Effect of O21, H2
11 O21, and N2
11 O21 ion-beam irradiation on the field
emission properties of carbon nanotubes
J. J. S. Acuna,1 M. Escobar,2,3 S. N. Goyanes,3 R. J. Candal,2,4 A. R. Zanatta,5
and F. Alvarez1,a)
1Instituto de Fısica “Gleb Wataghin,” UNICAMP, P.O. Box 6165 Campinas, SP, 13083-970, Brazil2INQUIMAE, FCEyN-UBA-CONICET, Ciudad Universitaria, Pabellon II, Buenos Aires, Argentina3Depto. Fısica, FECyN, UBA, Ciudad Universitaria, Pabellon II, Buenos Aires, Argentina4ECyT, 3iA, UNSAM, Campus Migueletes, San Martın, Pcia. Buenos Aires, Argentina5Instituto de Fısica de Sao Carlos-USP, P.O. Box 369, Sao Carlos 13560-250, Brazil
(Received 31 January 2011; accepted 23 April 2011; published online 15 June 2011)
The effect of O2þ, H2
þþO2þ, and N2
þþO2þ ion-beam irradiation of carbon nanotubes (CNTs) films
on the chemical and electronic properties of the material is reported. The CNTs were grown by the
chemical vapor deposition technique (CVD) on silicon TiN coated substrates previously decorated
with Ni particles. The Ni decoration and TiN coating were successively deposited by ion-beam
assisted deposition (IBAD) and afterwards the nanotubes were grown. The whole deposition
procedure was performed in situ as well as the study of the effect of ion-beam irradiation on the
CNTs by x-ray photoelectron spectroscopy (XPS). Raman scattering, field-effect emission gun
scanning electron microscopy (FEG-SEM), and field emission (FE) measurements were performed
ex situ. The experimental data show that: (a) the presence of either H2þ or N2
þ ions in the irradiation
beam determines the oxygen concentration remaining in the samples as well as the studied
structural characteristics; (b) due to the experimental conditions used in the study, no
morphological changes have been observed after irradiation of the CNTs; (c) the FE experiments
indicate that the electron emission from the CNTs follows the Fowler-Nordheim model, and it is
dependent on the oxygen concentration remaining in the samples; and (d) in association with FE
results, the XPS data suggest that the formation of terminal quinone groups decreases the CNTs
work function of the material. VC 2011 American Institute of Physics. [doi:10.1063/1.3593269]
I. INTRODUCTION
At present, it is recognized that carbon-based materials
in the form of nano-tubes, -onions, and -domes have an enor-
mous potential for field-emission devices applications.1,2
Carbon nanotubes (CNTs), in particular, are interesting
materials with various applications in materials science and
electronics.3,4 More recently, the incorporation of substitu-
tional atoms in the graphene network has been proposed as
an alternative route to modify its properties. The inclusion of
nitrogen, for example, is expected to change the electronic
properties of the material by acting as a donor impurity when
incorporated into a graphiticlike structure.1,5 However, the
effective control over the properties of either N-doped or
pure CNT’s is critical and requires removal defective struc-
tures typically present in these materials.6 Previous reports
confirm that Oþ ion-beam irradiation of nanotubes preferen-
tially eliminates carbon atoms bonded to highly reactive
parts of the material by forming volatile carbon oxide com-
pounds.7 Reports relating ion beam purification of nanotubes
is not common in the literature.1,7 Studies of graphite ion ox-
ygen beam erosion can help to give some clues about the
phenomenon involves in the oxygen nanotubes interaction.
However, these studies are generally performed by energetic
ions (>1 keV) in the attempt to understand the effect of O2þ
irradiation on graphite in fusion experiments, and conse-
quently, a straight forward comparison with our results is dif-
ficult.8 Although this limitation, our findings show that the
low energy O2þ bombardment produces volatiles compounds
(CO2 and CO) as reported with energetic O2þ ions probably
by eliminating defective C sites.
The etching process takes place because well-organized
structures such as fullerenes, nano-domes, -tubes, -onions,
and -horns containing graphitic planes are thermodynami-
cally more stable than amorphous (a-)C or other defective
structures.9–11 We note that, in spite of the extensive use of
etching purification process, the mechanisms leading to a
better material are not fully understood. Consequently, the
study of the microscopic mechanisms involved in the oxygen
ion-beam irradiation of nanostructured graphene-based
materials could improve our understanding as well as lead to
further control of their electronic properties.12 The effect of
oxygen etching can be seen, for example, in Fig. 1 where a
CNT structure presents flaws and dangling bonds. These
defects can react with oxygen species, which are either
eliminated or, when remaining attached, act as network
terminators.
Based on the above facts, the aim of this paper is to
investigate in situ the effect of O2þ, H2
þþO2þ, and N2
þþO2þ
ion-beam irradiation on the electronic properties of CNTs
deposited by CVD. The analysis of the physical-chemical
properties of the nanostructures produced by the ion-beama)Electronic mail: [email protected].
0021-8979/2011/109(11)/114317/7/$30.00 VC 2011 American Institute of Physics109, 114317-1
JOURNAL OF APPLIED PHYSICS 109, 114317 (2011)
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irradiation was studied by XPS in a ultrahigh vacuum (UHV)
chamber directly attached to the deposition and irradiation
chamber, i.e., the samples were analyzed by XPS without
atmospheric contamination.13 Afterwards, and in order to
study the changes in both structural and electronic properties
of the material, ex situ Raman scattering, electron micros-
copy, and field emission experiments were performed.
II. EXPERIMENTAL DETAILS
The CNTs are synthesized by CVD using acetylene as a
source of carbon on an in situ decorated catalyst Ni nanopar-
ticles (NPs) substrate. In fact, the substrate consisted of mir-
ror polished n-type (�15 X/cm2, <100>) silicon wafers
coated with TiN. The purpose of the TiN film (�100 nm
thick) is to avoid the formation of nickel silicide and it was
grown by ion-beam assisted deposition (IBAD).14 Briefly, a
high-purity titanium target (99.9995%) was sputtered by ar-
gon ions (1450 eV, 13 mA/cm2) in a nitrogen atmosphere
(partial pressure: 4.8� 10�2 Pa) at 650 �C. Afterwards, the
Ni NPs were deposited by sputtering a Ni target (99.9995%)
which was followed by annealing the sample for 5 min at
650 �C. Further details on the Ni island preparation can be
found elsewhere.15 After the catalyst NPs preparation, the
temperature of the substrate was raised to 700 �C and the
CNTs were grown during 5 min by introducing a gaseous
mixture of [H2]:[Ar]:[C2H2]¼ 1:10:6 sccm inside the prepa-
ration chamber (kept at 25 Pa). As we shall see below,
“carpet like” nanotubes are obtained from this procedure.
Three different series of nanotubes samples were then
irradiated in situ by O2þ, H2
þþO2þ, N2
þþO2þ ion-beams. The
chamber partial pressures due to the O2, H2, and N2 gases
feeding the Kaufman guns was maintained at 1.7� 10�3,
1.4� 10�2, and 1.9� 10�2 Pa, respectively. The nominal
energy of the ion-beam irradiation was fixed at 30 eV and
the current-density beam was �1.4 mA/cm2, i.e., the current
measured by the electronic ion gun instrument divided by
the area of the Kaufman exit grid of �3 cm diameter (Oxford
Instrument). Therefore, this grid determines the density of
current at the barley exit of the gun. Considering that in the
experiment the samples is located �20 cm from the gun exit
grid, the self ion repulsion spread up the beam to a diameter
of �10–12 cm lowering the density of current roughly one
order of magnitude, i.e., the beam at the sample is �0.14
mA/cm2. The selection of 30 eV ion energy is a compromise
between stability of the ion beam and low energy bombard-
ment of the sample to avoid strong sample damage. Finally,
each irradiation procedure is followed by annealing the sam-
ples at 400 �C for 10 min (in order to remove volatile com-
pounds) and afterwards transferred to the XPS analysis
chamber where their structural-chemical characteristics are
investigated.
The XPS spectra were taken using the Al Ka line
(��¼ 1486.6 eV) and a VG-CLAMP-2 electron hemispherical
analyzer14 providing a spectral resolution of �0.85 eV. The
atomic composition of the samples was determined by inte-
grating the core-level peaks, properly weighted by the photo-
emission cross section.16 The inelastic scattering background
contributing to the peaks associated with the electron core-
level spectra was subtracted by using Shirley’s method.17
Afterwards, the spectra were adjusted by a standard multiples
50%–50% Gaussian-Lorentzian peaks fitting procedure. The
ex situ, Raman spectra were obtained in the backscattering ge-
ometry by exciting the samples with the 488.0 nm at room-
temperature. Scanning electron microscopy (FEG-SEM GEM-
INI DSM 982) was employed for further characterization of
the nanostructures. The SEM images were essentially per-
formed with the main goal to observe possible changes due to
the irradiation treatment. Some TEM images (High-Resolu-
tion TEM, JEOL JEM-3010 URP) were obtained in few sam-
ples with the purpose to determine if the catalyze was on the
top or in the bottom of the nanotube, i.e., to discard that some
of the observed effects of the field emission experiments were
originated in metallic particles. Indeed, the TEM images show
that the nickel particles remain in the bottom of the nanotube,
i.e., they continue stacked in the substrate after sample
growth. It is important to remark that TEM experiments deter-
mining the number of nanotubes before and after irradiation
as well as their size and type (single wall, multi wall) could
bring interesting physical insight on the material properties.
At the present we have not systematic TEM images of the
samples and more work is necessary before drawing conclu-
sions regarding with the catalyst mechanism of the process.
At last comment regarding the catalyst. In accordance with
the TEM results, most of the nickel particles remain in the
root of the nanotubes. Therefore, the possible formation of
metallic compound with O, N, and H will not affect the field
emission results.
The field emission characteristics of the samples were
studied in a sphere-to-plane electrode configuration, with an
anode radii of 1.01 mm, at �22 �C, under vacuum conditions
(1.3� 10�4 Pa). The current versus voltage curves (I � V)
are obtained under different electrodes separation and nor-
malized. The I � V data are well represented by assuming a
Fowler-Nordheim emission mechanism. In the case of a par-
allel plane geometry, if d represents the distance anode-cath-
ode, the density of current J as a function of the electric field
E0 ¼ V=d is given by JðE0Þ ¼ aE20expð�g=E0Þ, where, V is
FIG. 1. (Color online) (a) Schematic CNT’s showing flaws and dangling bonds. (b) After ion-beam irradiation, oxygen species (open circles) are bonded to
these defects. (c) Further sample processing (such as thermal annealing, for example), eliminates very defective regions of the CNT and some oxygen acts as
bond terminators (open circles).
114317-2 Acuna et al. J. Appl. Phys. 109, 114317 (2011)
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the applied voltage, a ¼ ab2/�1, and g ¼ b/3=2b�1. Here, band / are the so-called enhancement geometrical factor and
work function of the material, respectively. The constants aand b are usually given, in the F-N equation, by a ¼ e3=8phand b ¼ 8p
ffiffiffiffiffiffiffiffi2me
p=3eh, where e and me are the charge and
electron mass, and h is the Plank’s constant. By direct substi-
tution one can obtain a¼ 1.54� 10�6 [A eV V�2] and
b¼ 6.83� 109 [eV�3/2 V m�1].
In the configuration of sphere-to-plane setup electrodes
such as those used in this paper, a correction of the F-N
equation is necessary and the following expression is
obtained for the I � V relationship:18,19
I ¼ 2prVag
V
d
� �2
exp�gd
V
� �: (1)
This equation is valid provided that r� d, where r is the
radius of the anode tip. The so-called linearized F-N form is
written as a function of d=V as:
lnId2
rV3
� �¼ ln 2p
ag
� �� g
d
V; (2)
where �g is the slope of the straight line represented by
Eq. (2). Defining I V=dð Þ ¼ Aeff J V=dð Þ, with r and d geomet-
rical known parameters, by fitting the experimental I � Vdata one can obtain the value of g and subsequently the
effective emission area given by:
Aeff ¼2prV
g¼ 2pbrV
b/3=2: (3)
As observed in Eq. (3) the effective emission area Aeff
depends on the applied voltage due to the fact that the anode
is curved.18
It is common to establish the relationship between / and
b from the slope of Eq. (2) or the interception of the curve to
the ordinate axis. However, previous reports suggest that the
former procedure does not always give reliable results.20,21
Therefore, in this paper we used the ordinate at the origin to
calculate the relationship / ¼ /ðbÞ, where / is given by:
/ ¼ 2pab3
bexp fð Þ
� �2=5
; (4)
where f ¼ lnð2pa=gÞ is the intercept defined by Eq. (2).
III. RESULTS
A. Morphological and structural characteristicsof the CNTs
Figure 2 presents FEG-SEM micrographs of all the stud-
ied samples. Figure 2(a) corresponds to the pristine sample.
From this picture (and the deposition time), the growth rate
was estimated to be �280 nm/min. The picture shows the
carpetlike CNTs in the back plane. The white parts observed
in Figure 2(a) correspond to CNTs that were peeled off and
moved from a different part of the sample. Figures 2(b), 2(c)
and 2(d) correspond to samples irradiated with O2þ,
H2þþO2
þ, and N2þþO2
þ ion-beam, respectively. These pic-
tures show that the main features of the original samples are
preserved in spite of the irradiation procedure.
Figure 3 shows the Raman scattering spectra correspond-
ing to samples irradiated with different ion-beam conditions.
The spectra show the so-called D-band (�1365 cm�1) and
G-band (�1590 cm�1) that are associated with the presence
of structural disorder (mode A1g) and graphite (mode E2g),
respectively.22,23 The Raman spectra present features that
depend on the ion-beam characteristics, which are related to
the oxygen incorporation.
FIG. 2. FEG-SEM images of CNT samples: (a) pristine, and (b) irradiated
with (c) O2þ, H2
þþO2þ, and (d) N2
þþO2þ.
FIG. 3. (Color online) Raman scattering spectra of CNTs irradiated in situwith O2
þ, H2þþO2
þ, and N2þþO2
þ ions. D and G stand for the disorder- and
graphitelike vibrational modes, respectively.
TABLE I. Atomic concentration (as obtained from XPS) of the studied
CNT samples: before and after irradiation.
Sample Carbon (at.%) Oxygen (at.%)
Pristine 100 0
O2þ irradiated 81 19
H2þþO2
þ irradiated 95 5
N2þþO2
þ irradiated 39 61
114317-3 Acuna et al. J. Appl. Phys. 109, 114317 (2011)
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B. Compositional and structural studies
The carbon and oxygen atomic concentration as
obtained from the XPS analysis is shown in Table I. First of
all, it must be said that, in the case of the N2þþO2
þ ion-beam
the nitrogen concentration remains below 0.5 at.%, i.e., the
limit of our detection technique. Also, we have noticed that
the presence of H2þ in the ion-beam diminishes the amount
of oxygen in the material. On the contrary, N2þ ions
enhanced the oxygen incorporation, which is even higher
than that provided by irradiating the samples with pure O2þ
ions. Considering that the XPS technique probes only the
most external surface of the samples (up to �5 nm) one can
assume that, most probably, these results correspond to the
tips of the nanotubes.
C. Field emission results
Figure 4 presents the ln(Id2/rV3) versus d/V curves for
all of the studied samples. As described in Sec. II this behav-
ior is characteristic of the Flower-Nordheim model, i.e., the
transport mechanism is a tunneling emission phenomenon.24
According to the literature, it is common to define the emis-
sion threshold field as the applied (macroscopic) electric
field (E0) necessary to produce a fixed current density.
However, this definition is not adequate considering that the
cathode geometry can influence the results.25 As a result, in
order to characterize the behavior of the electronic emission,
we propose that it is more reliable to calculate the current
density JL obtained when an arbitrary defined local electricfield, namely, EL¼ 1 V/nm, is applied. Here EL ¼ bE0, and
b, and E0 were previously defined. Experimental evidence
show that EL is typically a few V/nm, and it is significantly
higher than E0.25,26 Table III shows all the parameters
defined in Sec. II and obtained from fitting the Eq. (2) to the
experimental results displayed in Fig. 4.
IV. DISCUSSION
A. Morphological and material structuralcharacteristics
As observed from the Raman scattering spectra (Fig. 3),
the ion-bean irradiation treatments reduce the contribution
of the D-band while the G-band is not modified. In other
words, the disorder-associated vibrational modes are the ones
mostly affected by the treatment. The effect of the ion-beam
characteristic on the decreasing of the ID/IG ratio (Fig. 5) sug-
gests an efficient elimination of the more reactive parts of the
material—essentially dangling and wrong bonds. Moreover,
the Raman spectra present some broadening of the high-fre-
quency side of the G- and D-bands, most probably due to the
incorporation of oxygen in the CNTs (Table I).
FIG. 4. (Color online) Representation of ln(Id2/rV3) versus d/V curves, for
all studied CNT samples, before and after irradiation.
FIG. 5. ID/IG peak ratio obtained from the D- and G-bands (Fig. 3) after a
two Gaussian fitting procedure of the studied samples.
TABLE II. Summary of the different contributions present in the XPS spec-
tra deconvolution.
Band Binding energy (eV) Chemical bonding
PC1 284.4 6 0.1 aromatic CAC [1]
PC2 285.3 6 0.1 CAC sp3 type [1,2,13]
PC3 287.5 6 0.1 C @ O, CAO, and COO [1,2]
PC4 290.1 6 0.1 p-plasmons and/or shake-up [15]
PO1 530.3 6 0.2 >C @ O quinone [38]
PO2 531.7 6 0.2 C @ O in esters, amides and anhydrides [31]
PO3 533.2 6 0.2 AOH [1]
FIG. 6. (Color online) XPS spectrum and PCi fitting components associated
with the C1s core level. The spectrum corresponds to a CNT sample irradi-
ated with N2þþO2
þ ions.
114317-4 Acuna et al. J. Appl. Phys. 109, 114317 (2011)
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B. Effect of beam irradiation on the material chemicalstructure
As mentioned in Sec. III B, the fitting procedure of the
structure associated with the band due to C1s electrons yields
four bands: PCi with i¼ 1, 2, 3, 4 (Table II). All the studied
samples present C1s XPS spectra similar to the one shown in
Fig. 6, which corresponds to the CNT sample irradiated with
N2þþO2
þ ions. Here, PC1 (�284.4 eV) is attributed to CAC
bonds in graphitic sp2 configuration; PC2 (�285.3 eV) is
related to sp3 bonded carbon atoms; PC3 (�287.5 eV) is due
to carbon in carbonyl (C @ O<) and/or quinone groups; and
PC4 (�290.1 eV) is associated with the shake-up satellites
phenomenon, i.e., p! p* transitions in aromatic systems.16
Table IV contains the atomic percentage of each of these
contributions as well as their corresponding FWHMs.
Table IV roughly shows that independently of the ion-
beam composition, the sp2 bonds forming graphene are
eroded and, concomitantly, a relative increase of the sp3
bonds is observed. The increasing number of C @ O< and/or
quinone complexes are also observed in the irradiated sam-
ples. Finally, the presence of an almost constant contribution
of p! p* transitions (shake-up), typical of aromatic sys-
tems, suggests that the irradiation does not disrupt the conju-
gation of double bonds in the graphene skeleton.
Figure 7 shows the core levels due to O1s electrons
treated after irradiation with O2þ, H2
þþO2þ, and N2
þþO2þ
ions, as indicated in the figure. The fitting of the O1s core
level involves three main contributions: PO1 that is associ-
ated with quinone groups; PO2 that is attributed to carbonyl
(C @ O<), esters, amides and anhydrides; and PO3 that cor-
responds to OH groups (see Table II). For comparison pur-
poses, the relative concentration and FHWM of PO1, PO2,
and PO3 are shown in Table IV, as a function of the different
irradiation details. As can be seen, the data of Table IV sug-
gest that oxygen bond formation strongly depends on the
ion-beam characteristics. Moreover, two results are particu-
larly noteworthy: (a) the high contribution of C @ O quinoid
carbonyl groups (81.2%) in the samples irradiated with the
N2þþO2
þ beam (PO1); and (b) the high contribution of OH
groups attached to aromatic rings (PO3� 33.8 at.%) in the
CNT samples irradiated with H2þþO2
þ ions.
The material composition and formation of the different
structures discussed in connection with the XPS results
(Tables I, II, and IV) are a consequence of a complex inter-
play of chemical reactivity and kinetic of the process influ-
enced by the ion-beam bombardment. The energy of the ions
impinging on the surface of the samples is enough to break
C-C bonds, leaving dangling bonds to react with activated
species such as O2þ, N2
þ, and H2þ. The presence of H2
þ in the
ion-beam diminishes the amount of oxygen retained in the
material due its affinity with oxygen, explaining the low oxy-
gen concentration retained in the sample. At this point, it is
hard to explain why when irradiating with pure O2þ ions, the
amount of oxygen retained in the samples is smaller than in
the case of a N2þþO2
þ irradiation. This result suggests that
nitrogen species catalyze the incorporation of oxygen in the
material but more work is necessary to improve the under-
standing of this phenomenon.
The differences in the relative proportion of the func-
tional groups mentioned before can be explained based on
their chemical characteristics. The anhydride and esters
groups, responsible for the PO2 signal, are rich in oxygen
and can easily leave the carbon skeleton as volatile CO or
CO2. The simultaneous bombardment of the CNTs with N2þ
and O2þ produces esters or anhydride groups, which are im-
mediately eliminated as CO2 (or CO), leading to the produc-
tion of quinoid groups, responsible for the PO1 signal. On
the other hand, the presence of H2þ in the H2
þþO2þ ion-beam
decreases the concentration of oxygen species probably by
the production of H2O. Besides, the C @ O groups can be
FIG. 7. (Color online) XPS spectra associated to the emission of O1s elec-
trons in a CNT sample after irradiation with O2þ, H2
þþO2þ, and N2
þþO2þ
ions. The circles correspond to the experimental data, and the straight lines
to fitting functions (associated to C¼O ketone or quinine, C¼O carbonyl,
and -OH groups).
TABLE III. Summary of parameters obtained from Fig. 4.
Sample d [61 lm] g [61 V/lm] f Aeff [6102 lm2] / (b¼ 10) [60.5 eV] JL (b¼ 10) [60.1 mA/lm2]
Pristine 19 420 �32.29 6600 7.4 0.9
O2þ irradiated 22 593 �31.69 7100 5.8 1.3
H2þþO2
þ irradiated 15 856 �32.17 3640 7.0 0.1
N2þþO2
þ irradiated 17 457 �31.53 5440 5.4 1.5
114317-5 Acuna et al. J. Appl. Phys. 109, 114317 (2011)
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reduced to Ar-OH (aromatic alcohols) responsible for the
PO3 signal.
C. Electronic properties
The electronic emission parameters obtained by fitting
the experimental results shown in Fig. 4 to Eq. (1)–(4)
(Sec. II) are displayed in Table III. The b enhancement geo-
metrical factor was assumed 10—a factor generally accepted
for CNTs.27 As observed, the largest work function / was
achieved in the pristine samples. On the other hand, smaller
values were obtained in samples containing more oxygen af-
ter the irradiation treatment. Indeed, this finding is consistent
with the results reported by other researchers showing that
oxygen improves the electronic emission properties of
CNTs.12,28–32
The band associated with the O1s core level electrons is
located at a relatively low binding energy (530.3 eV), that
was recently attributed to the C¼O bond of quinoid
groups.33 In particular, within this group there is a functional
group, called benzoquinone, which contains two oxygen
atoms doubly bonded to carbon in terminal parts of the struc-
ture. As discussed before, the bombardment with the
N2þþO2
þ ion-beam contributes to the increment in the
concentration of quinoid groups at the tips of the CNTs. In
contrast, the H2þþO2
þ ion-beam reduces the quinoid concen-
tration. On the other hand, the Raman spectra indicate that
the irradiation slightly increases the width of the G-band
(Fig. 3), probably due to variations in the angles and length
of the sp2 type bonds, as well as broken bonds in aromatic
rings. We note that the treatment minimizing the structural
disorder (Fig. 5) is the one containing H2þþO2
þ ions in the
beam. Concomitantly, this treatment leads to less oxygen
incorporation in the material (Table I) and to the poorest
electron emission properties (Table III). Since for higher JL
electronic emission properties are better, one can conclude
that the material irradiated with N2þþO2
þ is improved, i.e.,
samples containing the highest oxygen concentration present
better emission properties. The relative high electronegativ-
ity of oxygen can help to understand these findings.7 The ox-
ygen atoms are bonded at the tips of the CNTs occupying
defects and mostly forming conjugated quinone groups.
Therefore, the formation of dipole terminators induced by
oxygen acting on delocalized p-electron may be responsible
by decreasing the effective work function of the material.
V. CONCLUSIONS
In this paper we presented a comprehensive study of the
effect of O2þ, H2
þþO2þ, and N2
þþO2þ ion-beam irradiation
on the field emission properties of CNTs. The CNTs were
grown by the CVD technique using Ni catalyst nanoparticles
deposited by ion-beam assisted deposition on silicon sub-
strates. The influence of the ion-beams composition irradia-
tion on the nanotubes structure was studied in situ by XPS.
Complementary information was gathered by ex situ Raman,
FEG-SEM. The characteristic parameters associated with
field emission properties of the nanotubes were estimated.
The work function of the material decreases when oxygen is
incorporated in terminator compounds, probably in defects
located in aromatic carbon rings present in the CNTs. The
treatment with N2þþO2
þ improves the field emission proper-
ties due to the formation of benzoquinonic functional group
(PO1 peak) by electronic delocalization (p-orbital) while the
treatment with H2þþO2
þ ion-beam increases graphitization.
In order to explain these differences we suggest that the
heavier N2þ ions induce defects that can bond to oxygen
atoms. The relative high electro negativity of the oxygen
increases the electronic density at the nano-tubes tips dimin-
ishing the work function of the material. The H2þ irradiation,
on the contrary, seems to improve the structural order and
prevents oxygen incorporation.
Finally, we propose an alternative criterion for evaluating
the electron emission of CNT’s which, presently, is based on
the electric field necessary to obtain an arbitrary electron
emission current. Indeed, considering that the cathode-anode
shape can influence the field emission results, we suggest that
it is more reliable to compare the relative emission goodness
of different samples by determining the current density
obtained when an arbitrary local electric field is applied.
ACKNOWLEDGMENTS
This work is part of the Ph.D. thesis of JJSA and was
partially sponsored by FAPESP (project 05/53926-1). JJSA,
ARZ, and FA are CNPq fellows. RJC, SNG and ME are
members of CONICET. Also, this work was supported by
UBA, Argentina (IP X191); CONICET (PIP 5215 & 5959),
TABLE IV. Atomic concentration (at.%) and FWHM (eV) of the C1s and O1s core levels, as obtained from the XPS analysis. The data correspond to CNT
samples irradiated with different ion-beam characteristics. The most probable origin of each PCi and POi contributions are indicated (brackets).
PC1
(sp2)
PC2
(sp3)
PC3 (C @ O<
and quinoid
carbonyl groups)PC4
(shake-up)
PO1
(quinone
groups)
PO2 (carbonyl,
esters, amides,
etc.)
PO3 (AOH
groups)
Sample
[C]
(at.%)
FWHM
(eV)
[C] (at.%) FWHM
(eV)
[C] (at.%) FWHM
(eV)
[C]
(at.%)
FWHM
(eV)
[O]
(at.%)
FWHM
(eV)
[O]
(at.%)
FWHM
(eV)
[O]
(at.%)
FWHM
(eV)
Pristine 60.5 1.2 21.2 2.0 1.6 2.0 15.5 4.9 — — — — — —
O2þ 55.0 1.2 24.1 2.3 5.1 3.1 15.7 5.7 42.9 1.3 51.4 2.3 5.7 1.2
H2þþO2
þ 56.2 1.2 26.0 1.8 3.3 1.6 14.3 5.0 13.4 1.7 52.7 2.3 33.8 3.6
N2þþO2
þ 53.4 1.2 23.9 3.6 10.4 5.7 13.1 10.0 81.2 1.7 15.6 1.5 3.2 1.3
114317-6 Acuna et al. J. Appl. Phys. 109, 114317 (2011)
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ANPCyT (PICT 10-25834 & 06-10621), Argentine-Brazilian
project CAPES – SPU 011/02. The authors are grateful to
Mr. C. Piacenti for technical assistance.
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