direct imaging system for advanced packaging -...

Confidential DAINIPPON SCREEN CONFIDENTIAL 1 SE-72-____-L2

Sept 17th, 2012

Semiconductor Equipment Company

Dainippon Screen Mfg. Co., Ltd.

DW-3000

Direct Imaging system for advanced packaging

Confidential DAINIPPON SCREEN CONFIDENTIAL 2 SE-72-____-L2

This document contains trade secrets and/or

proprietary information. You are permitted to use

the information only for the purpose of internal

discussion on the subject matter and with your

affiliated or subsidiary companies. Unauthorized

divulging of such information to others (excluding

your affiliated or subsidiary companies) is strictly

prohibited.

Confidential 3 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL

Global Roadmap for 3D Integration with TSV

2007 2008 2009 2010 2011 2012 2013 2014 2016 2006 2015

MEMS &

Sensors

MEMS

cavity MEMS

Cap

Sensor

Module MEM

S ASIC

CMOS

imagers SOC CIS

WLOptics

SOC CIS

ShellOP “Edge”

SOC CIS

TSV / WLP

SOC CIS 1.1µm

Consumer

BSI

3D

interposer interpos

er

ASIC MEMS

Multi-ASIC CMOS / MEMS

ASIC

Analog/RF Sensor

Opto WLP

MOEMS

Glass vias

Power, RF, Analog & Mixed

signals components PA / IGBT /

MOSFET

Ground

TSV

Stacked DDR3 ≥ 1.6Ghz

≥ 16Gbit

Stacked NAND Flash / NVM Stacked Memories

Logic + Memory

“wide I/O

interfaces”

Mem Logic

TSI

CPU /

GPU

eDRAM Logic 22-28nm

TSI

high perf.

ASICs

HB-LED interposer modules

LED Driver Multi-chip

modules LED Silicon

Module

CIS

High-end

BSI

ISP + mem

Logic multi-cores

HPC

RF-SiP

IPD

DSP

mem

CIS

Sapphire or

Silicon

Power GaN

LED

Driver

LED

Digital & Analog

partitioned

“3D-SOCs”

Small die

ASICs Logic N

Logic N+2

Analog /

RF

RF eFlash

Logic

Analog

eDRAM MEMS

Heterogeneous

3DICs Large die

Logic only

interposers

Baseband /

APE Mobile appliances Logic

DRAM

DRAM

DRAM

BB / APE

Wide IO mem

Logi

c N N+1

N+1 N+2 N+3


Advantages • Throughput of 68WPH @100mJ/cm2 for 300mm Wafer

• Suitable for flip-chip and advanced packaging

• Handles non-linear distorted wafers by W-to-W data correction at Die-level

• Wide focus latitude and superior resist profile due to single wavelength

• Job-execution without mask reduces cost and allows faster time to market.

• Allows Pattern-adjustment (e.g. size of contacthole) by mouse-click !

Features • High power YAG laser at 355nm (i-line).

• Front- and back-side alignment system.

• W-to-W local alignment data correction.

• Numerical Aperture = O,1

• Mask-less pattern transfer to wafer-surface.

DW-3000 Direct Imaging Exposure System


DW-3000 - GLV

Smart phones Mobile PCs Servers


UVDI Module

iGLV Device

16W YAG Laser

16W YAG Laser

Line Illumination Optics

UVDI GLV Modules

5:1 Reduction Optics

Line Images

Wafer

Direct Imaging System with GLV

◆GLV module for ultra-violet direct imaging in lithography system


Exposing data generation

Data transfer PC Head1

Data transfer PC Head2

Manufacturing site

Design

Data in

GDS

format

Copy

Design

Data

Parameters

Conversion order with RIP tool

Exp

ose

Data

Exp

ose

Data

From GDS data to RIP data.

RIP data is being transferred.

Ordering data conversion.

GDS is being converted

to RIP data.

Data transfer to exposing head

Transfer data

is selected

from main

panel.

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Y

Θ

1234567890

1234567890

ppm

ppm

1234567890

Start

Stop

25 E m p ty

24 E m p ty

23 P rep ared

22 P rep ared

21 P rep ared

20 P rep ared

19 P rep ared

18 P rep ared

17 P rep ared

16 P rep ared

15 P rep ared

14 P rep ared

13 P rep ared

12 P rep ared

11 P rep ared

10 P rep ared

9 P rep ared

8 P rep ared

7 P rep ared

6 P rep ared

5 P rep ared

4 P rep ared

3 P rep ared

2 P rep ared

1 P rep ared

Recipe_123456789

RIP_Data_123456789

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RIPポポポポポ

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RIPポポポポ

縮縮縮縮縮縮

X

Θ

縮縮縮縮縮縮縮縮縮縮縮縮

X 1234567890

1234567890Y

um

um

deg

X 1234567890

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Y

um

um

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um

mj/ cm2

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Summary of DW-3000 data processing

Customer LAN DW-3000

Exposure data generate

ordering PC


0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

45.0

50.0

55.0

60.0

65.0

70.0

75.0

80.0

85.0

90.0

95.0

10 100 1000 10000

100mJ/cm2 TP

300mm 68w/h

200/300mm

Bridge use 74w/h

200mm

Only use 90w/h

(wph)

Exposure Dose (mJ/cm2)

Th

rou

gh

pu

t

Condition Number of head : 2head Power : 4.8W

Stripe width : 8mm Alignment time: 8.5sec@4 point

Wafer exchange & stage travel time : 11.5sec

300mm

Only 200mm use

200mm/300mm bridge

Productivity


Laser diode 650nm Auto Focus

IR Reflection light through Si Back side

Visible Light

CCD Camera Front side

Alignment

Linear Motor + Air Slide X-Y Stage

16W YAG Laser

Paladin Advanced 355-16000 Light Source

iGLV (integrated Grating Light Valve) Spatial Light Modulator

68 WPH @ 100mJ/cm2 300mm wafer Throughput

≦1um (3σ) w/ Back-side Alignment

≦1um (3σ) w/ Front-side Alignment Overlay

Performance

≧3um (L/S) Resolution

Specifications Item

DW-3000 Specification


DW-3000

Performance, Functions

and Applications


Overlay result (Topside)

Tool Performance and Applications

X Y

Average 0.053um 0.051um

3σ 0.489um 0.559um

-1

-0 .9

-0 .8

-0 .7

-0 .6

-0 .5

-0 .4

-0 .3

-0 .2

-0 .1

0

0 .1

0 .2

0 .3

0 .4

0 .5

0 .6

0 .7

0 .8

0 .9

1

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26

Exposure number

Overla

y (u

m)

X：Average+3σ

Y：Average+3σ

300mm wafer

X Y

Average -0.11um -0.200um

3σ 0.620um 0.602um

Overlay result (Backside)

Post plating Post develop

t=57um, D=30um i-line CAR for Cu pillar post

TSV bottom

opening with

i-line CAR

100um deep Si

Intentional partial dose to

generate tapered sidewall

(Negative tone PR)

D=100um

D=40um


tok P-CH3000 t=50um

Dose : 90mJ/cm2

Substrate: Bare Si

PEB ：75℃ 5min

Develop ：TMAH 2.38%

60sec x 6 puddle

Φ30um Hole Focus= 0um

Φ10um Hole Focus= 0um

PR cross section profiles (1)

Via holes on thick i-line positive CAR


tok i-line positive CAR：TCIR-ZR8800 t=3.3um

0um 0um

3um L&S 3um Hole

Dose : 130mJ/cm2

Substrate: Bare Si

PEB ：110℃ 90sec


60sec x 1puddle

JSR i-line positive CAR : THB-152P t=10um

0um 0um

3um L&S 5um L&S

Dose : 40mJ/cm2

Substrate: Bare Si

PEB ：110℃ 5min


45sec x 2puddle

PR cross section profiles (2)

Vias and Lines/spaces (Near the resolution limit)


201001 201002

201003 201004 201005 201006

201007 201008

102001 102002

102003 102004 102005 102006

102007 102008

Unique ID function

Lot #1 Wf #2

Every chip can have its own unique ID number.

Lot #2 Wf #1

Ultimate traceability

1 01 004

101001 101002

101003 101004 101005 101006

101007 101008

Lot #1 Wf #1

Chip ID

Lot ID Wafer ID


Contact area for cathode

Photoresist wall

Ring shape wall can be exposed

during main exposure. Ring

diameter and width are set by

exposure tool.

Wafer edge patterning : For plating process

Photoresist wall

Plating

solution

Anode

Cathode


Convenient and cost-less in evaluating new resist having an opposite tone

(Negative <---> Positive)

Tone reverse : Ease of resist evaluation

Negative Positive


Original data

20um

Line width adjustment

In case line width has been shifted by changing process

conditions, line width can be fine adjusted by using bias

change parameters.

25

um

18um

19

um

X and Y values can be changed

independently.


5.0um

“Local alignment” feature (1)

Issue: Wafer shows non-linear distortion after thinning

Original wafer shape

Very rigid and

concrete

e.g. wafer may get longer in Y-direction.

e.g. wafer may get longer in X-direction.

Y

X


What a “Global Alignment” can do / can not do…


Global Alignment can adjust…

• X and Y shift

• Rotation

• Linear expansion and shrinkage

of the wafer ( = linear distortion )

１

2

3 4

but Global Alignment can NOT

compensate Non–linear distortion!


5.0um

Local alignment function does additional fine adjustment onto exposure data,

wafer by wafer.


１

2

3 4

5

6 7

8 9

Measure location

of each mark

Expose

Modify exposure

data

Calculate wafer

distortion based on

the offset of those

marks from ideal

location

Confidential 21 SE-72-____-L2 DAINIPPON SCREEN CONFIDENTIAL 21

X Y

Average -2.11um 0.90um

3σ 6.95um 5.68um

X Y

Average -0.59um 0.84um

3σ 1.93um 1.64um

5.0um 5.0um

Global Align. only Global Align. & Local Align.

“Local alignment” – Result (4)

Intentional distortion position

Exposure position


TSV patterning & Si etching

Bosch etching

PR pattern done by DW-3000

Resist : TCIR ZR880（i-line CAR from tok）

Thickness : 3.4um

Dose : 130mJ/cm2

Hole size : Top = 3.62um

Bottom = 3.42um Si

Resist

● perfect TSV hole - near the resolution limit !

3.4um

60um


57um

Cu pillar formation

After Cu plating

Resist : P-CR4000

（i-line CAR from tok）

Thickness : 57um

Dose : 140mJ/cm2

● Straight profile with thick photoresist


Patterning example to gap-fill

Patterning in TSV at i-line positive CAR

100u

m

Si

Dose ：500mJ/cm2

PEB ：90℃ 3min


60sec X 3puddle

30um

120u

m

Achieves deep bottom opening on SiO2


0% Dose

50% Dose

100% Dose

Final device

Bump

Pad

through

die to

bump

Front-end processed die

RDL line

Gray scale exposure advantage (1)

Vias and RDL patterns can be created with single exposure.


Exposure condition：Three levels of intensity 0%, 25% and 100% with one exposure.

0% Intensity

40um

25% Intensity 25%

100um

100% 100% Intensity

300mJ/cm2

Gray scale exposure advantage (2)

Negative photoresist Intentional slant wall angle


Reality is that

chips shift in X/Y

and rotates.

If chips are

perfectly mounted,

lines can be

generated as

designed.

Lines are

disconnected

due to chip

mounting error.

MCM (Multi Chip Module) - with Mask tools


Measure

mount error

Design rule

check new

data

Redesigned

data converted

to NEW

exposure data

Feed back to

design data

Mask tools do not have

capability to deal with.

With DW

Adding these special effect

Redesigned exposure

data will correct

mounting errors.

MCM (Multi Chip Module) - with DW-3000


Lower Power and High Performance IC´s

Smart phones Mobile PCs Servers

DNS continues to focus on further boosting productivity,

to meet the rapidly evolving needs of advanced package

manufacturing.


Headquarters： Kyoto, Japan

Foundation： Oct. 11, 1943

CEO： Akira Ishida

COO： Masahiro Hashimoto

Employees： 4,890（Consolidated）

2,089（Non-consolidated） (Fiscal year ended March 31, 2012）

Revenues： JPY 250 billion（Consolidated）

JPY 216 billion（Non-consolidated） (Fiscal year ended March 31, 2012）

Dainippon SCREEN Mfg.Co.

White Canvas Rakusai

（Rakusai Plant)

Process Technology Center

（Hikone Plant)

Fab. FC-1, FC-2

（Hikone Plant) Taga Plant

13%

20%

67%

Media &

Precision Tech.

FPD Equipm.

Semi Equipm.

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