Dimitris Tsoukalas

Christos Tsamis (eds.)

Simulation of Semiconductor Processes

and Devices

2001

SISPAD 01

Springer-Verlag Wien GmbH

Dr. Dimitris Tsoukalas Dr. Christos Tsamis

Institute of Microelectronics "Demokritos" National Center for Scientific Research

Athens, Greece

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Originally published by Springer-Verlag Wien New York in 2001 Softcover reprint of the hardcover ist edition 2001

Typesetting: Camera ready by authors Printing: Druckerei Theiss GmbH, A-9400 Wolfsberg Printed on acid-free and chlorine-free bleached paper

SPIN 10845347

With 474 Figures

ISBN978-3-7091-7278-0 ISBN 978-3-7091-6244-6 (eBook) DOI 10.1007/978-3-7091-6244-6

Editorial

This volume contains the proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SrSPAD '01, held on September 5-7, 2001, in Athens. The conference is organized annually and takes place in tum in Europe, Japan and the USA. SISPAD '99 was organized at Kyoto Research Park, Japan, and SISPAD '00 took place in Seattle, Washington, USA.

The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing the basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer-Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices. The proceedings were printed from the authors camera-ready manuscripts. We would like to express our sincere appreciation to the authors for their high-quality contributions, their cooperation and efforts. Also we would like to thank the members of the conference committee for reviewing the manuscripts carefully. SISPAD'02 will be held on September 4-6,2002 in Kobe, Japan. Certain to continue the tradition of being the most important conference in its tield, we once again look forward to a most successful and exciting event.

Dimitris Tsoukalas Christos Tsamis

Steering Committee

K. De Meyer IMEC Belgium J. Faricelli Compaq USA M.Law University of Florida USA P. Leon PetaLogic Corp. USA N. Nakayama STARC Japan S. Odanaka Osaka University Japan H. Ryssel FhG-IIS-B Germany D. Tsoukalas NCSR'Demokritos' Greece A. Yoshii Japan Women's University Japan

Honorary Committee

R. Dutton Stanford University USA S. Selberherr TU Vienna Austria K. Taniguchi Osaka University Japan

Technical Program Committee

Y. Awano Fujitsu Lab Japan G. Baccarani University of Bologna Italy R. Brunetti University of Modena Italy N.Cowem Philips The Netherlands M. Duane Applied Materials USA S. Dunham University of Washington USA N. Goldsman University of Maryland USA M. Hane NEC Japan H. Jaouen ST Microelectronics France M. Jaraiz University of Valla do lid Spain S. Jones Marconi Caswell Ltd UK J. B. Kuo University of Waterloo Canada P. Leon PetaLogic Corp. USA 1. Lorenz FhG-IIS-B Germany M. Miura-Mattausch Hiroshima University Japan W. Moizer Infineon Technologies Germany K. Nishi SELETE Japan P. Oldiges IBM USA M. Profirescu TU Bucharest Romania K. Rahmat IBM USA S. Selberherr TU Vienna Austria W. Shoenmaker IMEC Belgium T. Toyabe Toyo University Japan G. Wachutka TU Munich Germany

Contents

Macroscopic Quantum Carrier Transport Modeling . . .. .. . . .. . .. . . . . .. . z. Yu, R. W. Dutton, D. W. Yergeau and M G. Ancona

Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

M Jaraiz, P. Castrillo, R. Pinacho, I Martin-Bragado and J. Barbolla

Monte Carlo Impurity Diffusion Simulation Considering Charged Species . . 18 M Hane, T. Ikezawa and G. H. Gilmer

A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism. . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

D. Villanueva, P. Moens, K. Rajendran and W. Schoenmaker

The Role ofIncomplete Interstitial-Vacancy Recombination on Silicon Amorphization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... .. . 26

L. A. Marques, L. Pelaz, J. Hernandez and J. Barbolla

Atomistic Simulations of Extrinsic-Defects Evolution and Transient Enhanced Diffusion in Silicon. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

F. Cristiano, B. Colombeau, C. Bona/os, J. Aussoleil, G. Ben Assayag and A. Claverie

Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

G. Hobler and V. Moroz

Local Iterative Monte Carlo Investigation of the Influence of Electron-Electron Scattering on Short Channel Si-MOSFETs . . . . . . . . . . . . . . . . . . 38

J. Jakumeit and U. Ravaioli

Simplified Inelastic Acoustic-Phonon Hole Scattering Model for Silicon. . . 42 F. M Bujler, A. Schenk and W. Fichtner

An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

T. Grasser, H. Kosina and S. Selberherr

Density of States and Group Velocity Calculations for Si02 . . . • • • . • . • • • • 50 E. Gnani, S. Reggiani, and M Rudan

Investigation of Spurious Velocity Overshoot Using Monte Carlo Data . . . . . 54 T. Grasser, H. Kosina and S. Selberherr

viii

Elasto-Plastic Modeling of Microelectronics Materials for Accurate Prediction of the Mechanical Stresses in Advanced Silicon Technologies . . . 58

V Senez and T. Hoffmann

A Unified Model of Dopant Diffusion in SiGe . . . . . . . . . . . . . . . . . . . . . . . . 62 A. Pakfar, A. Poncel, T. Schwarlzmann and H. Jaouen

A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Sij.xGex by Carbon Insertion. . . . . . . . . . . . . . . . . . . . . . . . . 66

K. Rajendran and W. Schoenmaker

On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

A. Burenkov, Y. Mu and H. Ryssel

Dynamics ofp+ Polysilicon Gate Depletion due to the Formation of Boron Compounds in TiSiz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

F. C. Lau and W. Moizer

Analysis of Statistical Fluctuations due to Line Edge Roughness in Sub-O.I /lm MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ...... .. . . 78

S. Kaya, A. R. Brown, A. Asenov, D. Magot and T. Linton

Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential. . . . . . . . . . . . . . . . . . . . . . . . . 82

JR. Walling, A .R. Brown, A. Asenov and D. K. Ferry

Finite Element Simulation of2D Quantum Effects in Ultra Short Channel MOSFETs with High-K Dielectric Gates. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86

A. Poncet, B. Vergnet and M Mouis

Decananometer FDSOI Device Optimization Including Random Variation. . 90 D. Connelly

Fully 2D Quantum-Mechanical Simulation of Nanoscale MOSFETs . . . . . . 94 A. Pirovano, A. L. Lacaila, and A. S. Spinelli

Ab-initio Electrodynamic Modeling of On-Chip Back-End Structures. . . . . . 98 W. Schoenmaker, P. Meuris and W. Magnus

Analysis of Hot-Carrier-Induced Oxide Degradation in MOSFETs by Means of Full-Band Monte Carlo Simulation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108

Y. Kamakura, K. Deguchi, and K. Taniguchi

Acceleration of Lattice Monte Carlo Simulations and Application to Diffusion/Clustering of As at High Concentrations. . . . . . . . . . . . . . . . . . . . 116

S. T. Dunham and Z. Qin

ix

Interstitial Cluster Evolution and Transient Phenomena in Si-Crystal . . . . . . 120 A. La Magna, S. Coffa, S. Ubertino, M. Strobel and L. Colombo

Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD. .......... ... ... ..... . ....... .. ......................... 124

W. Pyka, C. Heitzinger, N. Tamaoki, T Takase, T Ohmine and S. Selberherr

Equipment and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer Planetary Reactor. . . . . . . . . . . . . . . . . . . 128

M. Dauelsberg, M. Deufe!, M. Reinhold, G. Strauch and T Bergunde

Numerical Simulation of Non-Equilibrium, Ultra-Rapid Heating of Si-Thin films by Nanosecond-Pulse Excimer Laser. . . . . . . . . . . . . . . . . . . . . . . . . . . 132

A. T Voutsas , H. Kisdarjono, R. Solanki and A. Kumar

20 Hierarchical Radio-Frequency Noise Modeling Based on a Langevin­Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 136

S. Decker, C. Jungemann, B. Neinhiis and B. Meinerzhagen

Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ........ 140

H. Kosina, M. Nedjalkov and S. Selberherr

Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical Simulation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144

M. Ogawa and T Miyoshi

2-D Self-Consistent Solution of SchrOdinger Equation, Boltzmann Transport Equation, Poisson and Current-continuity Equation for MOSFET . . . . . . . . . 148

C. -K. Huang and N. Goldsman

Boundary Condition Models for Terminal Current Fluctuations. . . . . . . . . .. 152 M. Nedjalkov, T Grasser, H. Kosina and S. Selberherr

Electron velocity in sub-50 nm channel MOSFETs . . . . . . . . . . . . . . . . . . . . . 156 D. Antoniadis, 1. Djomehri and A. Lochtefeld

3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER . . . 162

A. Asenov

Modeling of Reactive Ion Etching for Si/Si02 Systems. . . . . . . . . . 170 S. Hamaguchi and H. Ohta

x

Simulation and Prediction of Aspect Ratio Dependent Phenomena during Si02 and Si Feature Etching in Fluorocarbon Plasmas. . . . . . . . . . . . . . . . . . 174

C. Kokkoris, E. Cogolides, and A. C. Boudouvis

System Level Modeling of an Electrostatic Torsional Actuator. . ... , . . . . . . 178 R. Sattler, C. Wachutka, F. Plotz and S. Hoffmann

Impact of Substrate Resistance on Drain Current Noise in MOSFETs . . . . . . 182 J -s. Coo, S. Donati, C. -H Choi, Z. Yu, T -H Lee and R. W Dutton

An Efficient Frequency-Domain Analysis Technique of MOSFET Operation 186 K-J. Lee, J Kim, H Shin, C. Lee, Y J Park and H S. Min

Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs . .. 190 K Sonoda, M Tanizawa, K Eikyu, K Ishikawa, T Kumamoto, H Kouno, and M Inuishi

Compact MOS Modeling for RF CMOS Circuit Simulation . .... .... . ... 194 A .J Scholten, R. van Langevelde, L .F. Tiemeijer, R.NJ Havens, and D. B. M Klaassen

Statistical Analysis ofVLSI Using TCAD ... , ........ , . , . . . . . . . . . . . . . 202 S. Shigyo

Numerical Modeling of Impact-Ionization Effects on Gate-Lag Phenomena in GaAs MESFETs . .. .... . . . ... ... . .. . .. .. .. .. .. ... . .. .. .. .. . .. 210

A. Wakabayashi, Y Mitani, D. Kasai and K Haria

Monte Carlo Simulation of Multi-Band Carrier Transport in Semiconductor Materials with Complex Unit Cells. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 214

H-E. Nilsson, A. Martinez, M. Hjelm, E. Bellotti and K Brennan

Modeling Semiconductor Carbon Nanotube Rectifying Heterojunctions. . . . . 218 C. Pennington and N. Coldsman

Simulation of Vertical CEO-FETs by a Coupled Solution of the Schrodinger Equation with a Hydrodynamic Transport Model. . . . . . . . . . . . . . . . . . . . . .. 222

J Hontschel, R. Stenzel, W Klix, F. Ertl, T Asperger, R. A. Deutschmann, M Bichler and C. Abstreiter

A Computational Efficient Method for HBT Intermodulation Distortions and Two-Tone Characteristics Simulation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226

K -Y Huang, Y Li, C. P. Lee, and S. M Sze

Modeling the Impact of Body-to-Body Leakage in Partially -Depleted SOl CMOS Technology. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 230

M-K leong, R. Young, H Park, W Rausch, I. Yang, S. Fung, F. Assaderaghi and H-S. P. Wong

xi

Compact Device Model for Partially Depleted SOI-MOSFETs . . . . . . . . . . 234 Y Fujii. R. Yoshimura. T Matsuoka and K. Taniguchi

Two-Dimensional Model for the Subthreshold Slope in Deep-Submicron Fully Depleted SOl MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 238

H. van Meer and K. De Meyer

3D Thermal Analysis for SOl and its impact on Circuit Performance. . . . . 242 R v: Joshi. S S Kang. and C T. Chuang

Modelling of High-Voltage SOI-LOMOS Transistors Including Self-Heating 246 A. C T A arts. M 1. Swanenberg and W1. Kloosterman

An Efficient Tool for Extraction of Interconnect Models in Submicron Layouts. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 250

P. Majfezzoni. A. Brambilla and A. L. Lacaita

A Comparative Study of Two Numerical Techniques for Inductance Calculation in Interconnect Structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 254

C Harlander. R. Sabelka and S Selberherr

Comparison of Finite Element Stress Simulation with X-Ray Measurement for the Aluminum Conductors with different Passivation Topography. . . . .. 258

T-K. Kim. Y-P. Kim. W-Y. Chung. Y-K. Park and 1.-T Kong

A New Compact Spice-like Model ofE2PROM Memory Cells Suitable for DC and Transient Simulations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 262

L. Larcher, P. Pavan, M Cuozzo and A. Marmiroli

Simulation of Flash Memory Programming Characteristics . . . . . . . . . . . . . . 266 K. Matsuzawa and T Ishihara

A Figure of Merit for Flash Memory Multi-Layer Tunnel Dielectrics. . . . . . 270 B. Govoreanu, P. Blomme, M Rosmeulen, 1. Van Houdt and K. De Meyer

Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs . . 274 J Lee, W -S Cheong. J-H. Choi and J-C Om

Neutron-SER Modeling and Simulation for O.l8)lm CMOS Technology. . . . 278 C Dai. N. Hakim. S Walstra, S Hareland. 1. Maiz S Yu and S-W Lee

TCAD Driven Process Design of 0.15)lm Fully Depleted SOl Transistor for Low-Power Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 284

N. Miura, H. Hayashi, H. Komatsubara. M Mochizuki. H. Matsuhashi, Y Kajita and K. Fukuda

xii

A Simulation Evaluation of 100nm CMOS Device Perfonnance . . . . . . . . . . 288 S. K. Jones, D. J. Bazley, E. Augendre, G. Badenes, A. de Keersgieter and T Skotnicki

A Practical Approach to Modeling Strained Silicon NMOS Devices. . . . . .. . 292 P. Oldiges, X Wang, M-K. leong, S. Fischer and K. Rim

Accounting for Quantum Effects and Polysilicon Depletion in an Analytical Design-Oriented MOSFET Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 296

M Bucher, J.-M Sallese and C. Lallement

Investigations ofSalicided and Salicide-Blocked MOSFETs for ESD Including ESD Simulation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300

V Axelrad, Y. Huh, J. W. Chen and P. Bendix

Bipolar Transistor's Intrinsic and Extrinsic Capacitance Detennination. . . . . 304 B. Ardouin, T Zimmer, H. Mnij , P. Fouillat, D. Berger and D. Celi

Varying Characteristics of Bipolar Transistors with Emitter Contact Window Width . .. ... . ... . ... .. . ... . . .. .. .. . .. .. .. . . .. . . .. . .. . .. .. . . ... 308

J. Fu, S. Mijalkovic, W. J. Eysenga, H. W van Zeijl and W. Crans

Ensemble Monte Carlo Particle Modeling of InGaAs/lnP Un i-Traveling­Carrier Photodiodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312

M Ryzhii and V Ryzhii

An Effective Methodology for Predicting the Distribution of MOSFET Device Characteristics Using Statistical TCAD Simulations. . . . . . . . . . . . . . 316

T Tatsumi

Quantum Mechanical Balance Equations for Modeling Transport in Closed Electric Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320

B. Soree, W. Magnus and W. Schoenmaker

A Nonlinear Iterative Method for InAs/GaAs Semiconductor Quantum Dots Simulation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 324

Y, Li, 0. Voskoboynikov, C. P. Lee, and S. M Sze

The modeling of a SOl microelectromechanical sensor. . . . . . . . . . . . . . . . . . 328 C. Ravariu, F. Ravariu, A. Rusu, D. Dobrescu and L. Dobrescu

A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation ofIon Implantation into Complex Structures. . . . . . . . . . . . . . . . 332

D. Li, G. Wang, Y. Chen, G. Shrivastav, S. Oak, A. Tasch and S. Banerjee

xiii

A Full-Wave Analysis for Multi-Level Interconnects Using FDTD-PML method . ... . .. ... ........... '" . .. . ... .. . . . ... . .. . .. .. . . . . . . . . 336

Y. Kim, S Yoon, I. Choi, SPark, 0. Kwon, and T. Won

Differences Between Quantum-Mechanical Capacitance-Voltage Simulators. 340 C A . Richter, E. M Vogel, A. M Hodge, and A. R. Hefner

Investigation of a Novel Rapid Thermal Processing Concept Using an Electro-Optically Controlled Radiation Cavity. . . . . . . . . . . . . . . . . . . .. . . . . 344

N. E. B. Cowern, F. Roozeboom and P. van der Sluis

A Shared Architecture for a Dynamic Technology Simulation Repository. . . 348 M G. Khazhinsky, A. Hoefler, M Stockinger, D. 1. Collins, /. Clejan, K. Wimmer, W. Taylor, M Foisy, 1. M Higman, L. Bomholt, C Clemencon, 0. Zuyakova and W. Fichtner

Level Set Modeling of Profile Evolution during Deposition Process. . . . . . .. 352 0. Kwon and T. Won

Parameter and Coupling Ratio Extraction for SPICE-Compatible MACRO Modeling of Source Side Injection (SSI) Flash Cell. . . . . . . . . . . . . . . .. . . . . 356

S-P. Sim, P. Guo, A. Kordesch, B. Lee, C-M Liu, K. Lee, and C Y. Yang

Theoretical Calculation of a Charged Particle Detector's Response, Fabricated by Semi Insulating (ST) GaAs . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 360

V Theonas and G. Papaioannou

Stress Modeling of Multi Level Interconnect Schemes for Future Deep Submicron Device Generations. . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . .. . . . 364

C Gonzales Montes De Oca, S Foley, A. Mathewson and 1. F. Rohan

Robust Method for Fast and Accurate Simulation of Random Dopant Fluctuation-Induced Vth Variation in MOSFETs with Arbitrary Complex Doping Distribution. . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. 368

I. De, A. Shibkov and S Saxena

An Agent-Based Common Software Platform Applied to Multi-scale Device and Process simulations . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . .. . . . . . . . . . 372

S Ho, Y. Ohkura, M Ikegawa, N. Mise, 1. Prasad, Y. Kawashima, and S Kubo

Simulation of Dark Count in Geiger Mode Avalanche Photodiodes. . . . . . . . 376 1. C Jackson, B. Lane, A. Mathewson and A. P. Morrison

Device Simulation and Measurement of Hybrid SBTT. . . . . . . . . . . . . . .. . . . 380 K. Matsuzawa, K. Uchida, A. Nishiyama, T. Numala and M Noguchi

xiv

Two-Dimensional Diffusion Characterization of Boron in Silicon Using Reverse Modeling. . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . 384

E. N. Shauly, R. Ghez and fl Komem

Simulation of Advanced n-MOSFET Emphasizing Quantum Mechanical Effects on 2-D Characteristics .. . .... . . .. . . ... . ... .. .. .. . . . . . .... . , 388

f Ma, L. Chen, B. Jiang, M Zhang, L. Tian, Z. Yu, L. Liu and Z. Li

Vth Model of Pocket-Implant MOSFETs for Circuit Simulation. . . . . . . . . . 392 D. Kitamaru, H U eno, K. Morikawa, M Tanaka, M Miura-Mattausch, H J Mattausch, S. Kumashiro, T Yamaguchi, K. Yamashita and N. Nakayama

Electrothermal Device Simulation of an ESD Protection Structure Based on Bipolar DC Characteristics. . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 396

A. Icaza Deckelmann, G. Wachutka, G. Groos and W Kanert

Characterization of Low-Frequency Noise of MOSFETs Using the 2-D Device Simulator. . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . . 400

H Nah, f J Park, H-S. Min, C. Lee and H Shin

Electron Beam Lithography Simulation for Subquartermicron and High­Density Patterns . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . . . 404

l. Raptis and N. Glezos

Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High-Voltage Applications . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . 408

J. Cervenka, M Knaipp, A. Hassinger and S. Selberherr

Analysis of Ultra-short MOSFETs with High-k Gate Dielectrics. . . . . . . . . . 412 K. Dragosits, f Ponomarev, C. Dachs and S. Selberherr

TCAD Analysis of Gain Cell Retention Time for SRAM Applications. . . . . . 416 A. Gehring, C. Heitzinger, T Grasser and S. Selberherr

Optimization for TCAD Purposes Using Bernstein Polynomials. . . . . . . . . . 420 C. Heitzinger and S. Selberherr

Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 424

A. Hassinger, T Binder, W Pyka and S. Selberherr

A Methodology tor Deep Sub-Quartermicron CMOS Technology Characterization . .. .. .. . .. ... .... .. . . ... . .. . . . ... . .. . . .. . ... . . " 428

V Palankovski, N. Belova, T Grasser, H Puchner, S. Aronowitz and S. Selberherr

xv

A Review of Modeling Issues for RF Heterostructure Device Simulation. . . 432 R. Quay. R Schultheis, W. Kellner, V. Palankovski and S. Selberherr

Modeling and Simulation of Charge Generation Events Caused by Ion Irradiation in High-Voltage Power Devices . . . . . . . . . . . . . . . . . . . . . . . . . .. 436

W. Kaindl, G. Wachutka and G. S6lkner

Determination of the Radiation Efficiency, Contrast and Sensitivity in Electron and Ion Lithography. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 440

K . Vutova, G. Mladenov and I. Raptis

Author Index 444