dft for effective mobile dram test°•의정책임(sk하이닉스).pdf · -...
TRANSCRIPT
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1. ICT trends for mobile device
2. Test Challenges -. Restrictions of mobile DRAM test-. DFT for mobile DRAM test
3. Summary
Contents
4 / 43
ICT Trends for Mobile Device
Mobile Platform : ExtensionSmartphone : Convergence
Automotive
Wearable
Digital Appliance
More Smart DevicesInternet
Camera
Wi-fi
Game
Music
Computer
5 / 43
Global Tablet ShipmentsGlobal Smartphone Shipments
Source : Carnegie Research, IDC 2015 Source : Carnegie Research, IDC 2015
Mobile Era
Global Smartphone, Tablet devices growth rate get decreasedSpecially, Smartphone Market reached a saturation in China
6 / 43
Post Mobile Era - IoT & IoE
Source : Cisco 2014
Connected Device Market Explosion by IoT BoomingWearable/Smart Car leads the Growth
(unit : billion)
Y2003 Y2008 Y2010 Y2015 Y2020
50
40
30
20
10
07.6B
Cross-over
Devices > world population
Smart Things
50B
World Population
<Connected Devices per Person>
vs.0.08 in 2003 6.58 in 2020
Connected Devices Internet of Everythings
7 / 43
Mobile DRAM Usage goes beyond Mobile
LPDDR4
Network
Automotive
Set top box
Micro Server
Tablet PC
UltrabookIoT
LPDDR3
Smartphone
Ultrabook
Tablet PC
Tablet Smartphone
LPDDR2
LPDDR1
Feature phone(Media phone)
Higher Power Efficiencyin a small form factor
Smartphone
Wearable
8 / 43
Wearable Devices Market Forecast
Computing performance
Mem
ory
Den
sity
Smart Glassw/ High Density mDRAM/Flash
Feature-rich Smart Watchw/ Mid/Low Density mDRAM/Flash
Basic Smart Watchw/ Less or Small Density of mDRAM/Flash
Wrist band
Hardware Landscape of Wearable DevicesWearable Devices Shipments
Wrist wear applications will lead Wearable Devices Market (CAGR 42.6%)From Smart Glass to High Density Devices
Source : IDC 2015
(M unit)
9 / 43
Wearable Device Evolution
Wearable devices will evolve portable → attachable → eatable devices
Portable Attachable Eatable / Implementable
Now ~ 2020 2020 ~
10 / 43
Wearable Device Status
New Wearable Company market advanceNew Platform leadership competition will be deepen
‘15 4월i-watch
G watch Urbane LTE
‘14 9월
Gear S Gear VR
Smart watch 3
ZENwatch
‘14 6월
G watch
Moto360
Android Wear IoT NotificationGoogle Fit
Nest 기반 Smart Home Platform
Galaxy Gear1
CES ‘14 1월 MWC ‘14 2월
Pebble Steel & App store 공개
Life Band Touch
Smart Band, Core
TomTom社, Nike+ 브랜드 없는 GPS 손목시계
자동차와 wearable 연동
Gear 2 & Fit
Talk band
Smart Gloves
Lumus Glasses
‘14 10월
새로운Platform 전쟁
MWC ‘15 2월
Huawei watch
다양한 OS 소개
OS
11 / 43
Smart Watch Role
Smart watch는 단순 시계가 아닌 IoT의 중심(Control Device) 역할 예상
<iWatch>
iCloud
iPodiCar
Mac
iPad
iPhone
iTV
iHome
Medical
Message
Phone
Sports & Fitness
Smartwatch
Music
Driving DivergenceSmart Watch Role
12 / 43
Augmented / Virtual reality Market will expand from 2016Augmented reality will be majority and merge rapidly with whole industry
Augmented / Virtual Reality Market
Source: Digi Capital 2015
Unit:M$
Virtual reality applicationsAugmented / Virtual reality revenue
적용 분야 예시
엔터테인먼트 • 3D 게임, 여행 같은 체험 형 콘텐츠
교육용• 박물관 체험, 천체위치 연구, 건축 설계나 화학분자 설계연구, 군사용 비행, 전투모의 훈련
의료용• 가상 수술, 원격진료, 해부학 등 입체영상 응용, 각종 공황장애와 트라우마 치료
산업용• 제품 가상 체험 형 마케팅, 로봇 원격조종을 통한 제조 공정 활용
You Visit of New York ROOM VR
Oculus Rift 수술상황체험Oculus Rift 전차운행훈련
(B$ unit)
13 / 43
Google Magic Leap
Magic Leap will lead Post Smart Phone era.Selected MIT breakthrough technologies 2015
ProjectorProjector of Google Glass
Magic Leap’s 3D image
Magic Leap의 OST-HMD의 구조는 Projector로 착용자의눈동자에 이미지를 주사하고 적외선 광원을 비춘 후 적외선
카메라로 사용자의 동공을 tracking. Machine vision camera, 머리 동작 센서, 센서 어셈블리를 통해 자이로 센서와가속도 센서 Data를 수집해 사용자의 동작과 속도에 맞게 실제세계 이미지에 2D나 3D 증강현실 객체를 구현하는 형태로 실제
환경을 그대로 구현한 가상 현실에서 게임을 즐기거나 실제환경에 가상 아바타를 구현한 혼합 현실을 경험
Magic Leap OST-HMD system
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Consumer application will need High performance / Low power memory
LPDDR4의 응용 분야 확대 Device별 응용분야 확대
PC
Notebook
DTV/ STB
Automotive
ARM-server
Tablet
S/P
DDR3/4
LPDDR4
WIO2?
Mobile
Consumer
PC
SV
Client
Automotive/ Network
ARM-Server
LPDDR4(SP/Tablet)
ARM-Server DTV Auto. STB Network
I/O Config X64(/x72) x64 x64 x64 x16
MemorySolution
DDR3/4LPDDR4
DDR3/4LPDDR4
DDR3/4LPDDR4
DDR3/4GDDR5LPDDR4
DDR3/4LPDDR4
Expansion of mobile DRAM
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Mobile Platform Extension to Automotive
Automotive is more than just “Thing” and is becoming smarter !- More Data, More Devices, and More Services
STEP 2 : Infotainment
STEP 3 : Smart car, Automotive IoT
STEP 1 : Navigation
(driver-less)
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Smart Home Market
Smart home market will be twice after 5YOver 12% of WW house hold will possess in 2019
WW Smart home market
Source : Strategy Analytics 2014/2015, 한국 스마트홈 산업 협회
‘14 ‘15 ‘16 ‘17 ‘18 ‘19
단위: 억달러
480575
690821
1,0001,115
13%
25%38%
8%
18%27%
4%
8%12%
‘13 ‘16 ‘19
미국
영국
글로벌
시장
규모
보급률
주요 업체별 사업동향
기업 활동내용
Google- 온도 조절장치와 화재 경보장치 관련 ‘Nest Labs’ 인수- CCTV 제조사 ‘드롭캠(Dropcam)’, 스마트홈 네트워킹기술 개발사인 ‘Revolv’ 인수
Apple- iOS 기반 스마트홈 개발도구인 ‘Home Kit’ 공개- 애플 협력업체들은 홈킷을 통해 스마트제품 및 서비스를 개발/출시 가능
Microsoft- 클라우드 기반 Smart Home 사업 확대- PC 운영체제 + Smart TV 운영체제 ‘Media Room’ 공개- Xbox와 콘솔 게임기의 강점을 이용한 영향력 강화시도
삼성- 자체 개발한 ‘타이젠 OS’ 를 탑제한 Smart TV중심으로냉장고,세탁기 등을 연동한 스마트홈 구축에 주력
- 미국 사물인터넷 업체인 ‘Smart Things’ 인수
LG
- Platform 호환성 강화를 통해 스마트홈 Ecosystem 구축
- Smart Home 서비스인 ‘Home chat’을 통한 스마트폰연계 가전기기 제어서비스 강화 계획
Amazon- 음성기반 개인비서 서비스 ‘Alexa’ 공개, 추후 플랫폼으로 진화 시킬 계획
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Mobile Market Outlook
Mobile DRAM design is steadily evolving for better power efficiency and wider data bandwidth
Mid/low-end will lead smartphone market growth
Source: SK hynix Marketing
(Units in Millions)
Source: iSuppli 2014
703
990
1,200 1,338
1,472 1,590
1,685
58%
66%69% 71% 72% 74% 75%
0%
10%
20%
30%
40%
50%
60%
70%
80%
0
200
400
600
800
1,000
1,200
1,400
1,600
1,800
2,000
2012 2013 2014 2015 2016 2017 2018
High-end (>$300) Mid-end ($100-300) Low-end (<$100)
Low/Mid portion (%)
0%
0%
0%
0%
0%
0%0%
0%0%
0%
0%0% 16%
27%
18%
11%
3%0% 0%
0%
0%
0%
0%
0%
0%0%
0%0%
0%
0%0%
0%
3%
17%26%
16%
9%5%
0%
0%
0%
0%
0%
0%0%
0%0%
0%
0%0%
0%
0%0%
3%
24%
34%37%
0% 0%
0%0% 0% 2%
22%
57%
72%67%
58% 54% 41%
23%
10%
7%
0% 0%
0%0% 0% 0% 0% 0% 0% 0% 0%
2%10%
26%
40%46%
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2000200120022003200420052006200720082009201020112012201320142015201620172018
LPDDR2
DDR3
DDR4
DDR2DDR
Graphics
SDR
LPSDR/DDR
LPDDR3
LPDDR4
WIO
Mobile DRAM Demand Portion Smartphone Market Outlook
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Mobile OS Evolution
4GB Memory required for Flagship smartphone from Android MMinimum density increasing
Kitkat Lollipop Android M Android NJellyBeanICSAndroidVersion
1GB
2GB
3GB
4GB
340MB
512MB
832MB
1GB
lagship
inimum Density
F
M
2GB
4GB?
1GB?
340MB
LPDDR2 LPDDR2
LPDDR3
LPDDR3
LPDDR4 LPDDR4
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Mobile DRAM Roadmap
2013 20202014 2015 2016 2017 2018 2019
BW [GB/s]
15.0 LPDDR3 (1866)
25.6 LPDDR4 (3200)
30.0 LPDDR4 (3733)
34.1 LPDDR4 (4266)
51.2 LPDDR5 (6400)
12.8 LPDDR3 (1600)
Uncertain
WIO2?
LPDDR5에 대한 요구는 2018년 이전에는 일부 고객들로 제한적하지만 Specification 논의는 빠른 속도로 진행 예상
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LPDDR Memory Evolution
In recent years, memory BW becomes doubled at every 2 yearsPower efficiency improved at similar rates
LPDDR3 LPDDR4 ?
mW/ GBps GB/ s
2002 2006 2010 2012 2015 ?
LPSDR LPDDR
LPDDR2
Year
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10:083
Density & Performance
Wearable - Key Requirements
Hi g h
L ow er Power Consumption
C urvedForm Factor
22
For Hub function(High resolution N-screen)
High density/
High performance
Battery Constraint
Package SizeHeight (thinness)Flexible package
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LPDDR4X (Jedec standard)
VDD2 1.1V + VDDQ 0.6VLPDDR4X
LPDDR4VDD2 = VDDQ (1.1V)
That every customer concerned with SoC needs power
LPDDR4X will be solution of power efficient device
LPDDR4 LPDDR4X
Interface
Type LVSTL LVSTL extension
고려 사항 Reference VDD2 / VDDQ 분리
Tx Rx
Rx
1.1V
1.1V Tx Rx
Rx
1.1V
0.6V
Power
Bandwidth
Bus Utilization
PKG
SI/PI
[ What’s in industry players’ mind? ]
25 / 43
Cost
Mobile [LPDDR3, LPDDR4] Computing [DDR3, DDR4]
Wafer Test PKG Test Wafer Test PKG Test
I/O X32, X64 X4, X8, X16
Ball Type134B,168B,216B,220B,256B,253B,261B,361B,396B,426B,456B,504B,366B,450B,272B,200B,
480B78F, 96F
Pitch 0.35Pitch 0.8Pitch
Speed Max 4.2Gbps Max 3.2Gbps
33%
67%
15%
85%
Mobile vs. Computing DRAM
Mobile DRAM is required various ball types, fine pitch, high speed
and many I/O more than computing DRAM.
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0.2 Pitch는 PKT Infra 개발이 필요하며 투자비 크게 증가 Issue
Package Test 비중을 줄이고 Wafer Test 위주로 진행 필요
Test Infra 개발 필요 현재의 PKT Infra 기술수준으로 대응
Ball Pitch에 따른 Issue
Cost
0.2 Pitch Cost Increment
Sorter 및 Handler 정밀도 향상을 위한 장비 개발 필요
Socket, DSA, BIB 개발 필요
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PoP Warpage Issue
Top과 Bottom Package의 Warpage 거동을 맞추는 게 무엇보다 중요Package Burn in 이후에 변형으로 Warpage guide line 맞추기 어려움
Merits Demerit
- Save space on mother board
- Shorten the length of the trace
→ Signal Character is better
Warpage
TOPBOTTOM
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Known Good Die Test
Over 1.6Ghz to 2.2Ghz speed test is possible at Wafer Tester ? But Parallelism is Too small !!!
Many I/O’s : New challenge uBump probe
APL0778+4Gb LPD3 KGD
PCB
APDRAM
KGD
More Small Form-factor
Solution
ePoP
KGD
Small Form-factor for KGD Solution
• KGD Biz Growing : Aggressive Wafer level test at-Speed
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Test Cost Issue
Test Cost Reduction 위한 Design for Test 기술 개발이 필요
- Data Compress 방법 등 Test Time Reduction 대응
- Pin Reduction을 통한 Wafer test 1 Touch Down 대응
Net die growth according to tech shrink Test COM portion
High density product demand increase with ICT trend1 Die TEST Cost up : Density / Net Die growth
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Package Speed Test - Parallelism
I/O [X]
Device
DQ Non-Shared DQ Shared
DQ [X]
I/O [X/2]
Device
DQ[X/2]
DQ[X/2]
I/O [X/4]
DeviceDQ
[X/4]
DQ[X/4]
DQ[X/4]
DQ[X/4]
DQ Shared + DFT
I/O [X/4]
DeviceDQ
[X/4]
DQ[X/4]
DQ[X/4]
DQ[X/4]
[DFT]Mode
Control
DQ-Shared를 통한 Parallel 확장으로 생산성 향상 DFT (IO Reduction Mode) 적용을 통하여Control 해야 되는 DQ수를 반으로 줄임
> 2DQ-Shared 특성을 유지하며4DQ-Shared의 생산성을 확보
Non-Shared Concept
> 4DQ-Shared로 인한 특성저하로 불가한 Concept
> Non-Shared 대비 특성은저하되지 않으나 생산성이떨어짐
▶ Non-Shared 대비 생산성 2배
▶ Non-Shared 대비 생산성 4배
Package Speed Test 비용 감소를 위해 Parallelism 확장 필요
Mobile DRAM은 IO수가 많아서 Parallelism 확장에 어려움
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Advanced Wafer Burn In Stress
Package Burn In Wafer Burn In Dynamic Wafer B/I
W/L enable 1 100000 100
Stress Dynamic Static Dynamic
S/A 동작 O X O
VPP 전원 내부 외부 ←
Time Long Short ←
Parallelism 10000 1000 ←
Warpage Issue Free ←
Fine ball pitch, Various ball types에 의한 Package Burn In 비용 증가, Warpage issue 및 KGD Biz. 대응
-. 일부 C/A Pin으로 Dynamic Wafer Burn In 구현 가능하도록 DFT 반영 필요
-. Multi W/L Enable을 통한 stress time 감소 필요
-. Stress time 감소로 Sub Wordline Driver, Sense Amplifier Tr.도 Stress 감소
→ Gate to Source/Drain 간 잠재 불량 모델링에 의한 Stress 가속 방법 고려 필요
AdvancedWafer
B/I
WaferB/I
(Static)
PKGB/I
(Dynamic)
① SWD ②S/A
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Wafer Test Cost Reduction
LPDDR4X LPDDR4 LPDDR3
External Power(PPS)
VDD1 1.80 1.80 1.80
VDD2 1.10 1.10 1.20
VDDCA - - 1.20
VDDQ 0.6 1.10 1.20
Level 종류 3 2 2
IO(X32기준)
DQ 32 32
DQS 8 8
DMI 4 -
Total 44 44 40
Pin Reduction을 위한 DFT 발굴
Chuck 무게 한계 극복
Pin 배치 난이도 증가에 따른 P/Card 제약
New Feature 지원 Pin 과 Power 세분화로
Test 용 Pin 증가로 Test Infra Para 한계
4, 8,16개 IO Compress를 통한 IO Pin Reduction
LPDDR4X VDDQ Power를 Internal로 대체
Case A Case B
Pin 수 60Pin 35Pin
Chuck하중
60Pin * 4g * 2000Die 35Pin * 4g * 2000Die
480kg 280kg
Pin 배치
Mobile DRAM은 Wafer test 위주로 진행 필요 → 장비 소요 증가
Multi W/L Activation을 통한 Data Compress
One T/D을 위한 Pin Reduction을 위한 DFT 발굴 필요
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CLK 1Ghz [2Gbps] Operation
High Speed 4Gbps Operation
CMD GeneratorADD Generator→ 내부 Clock
Rising에 동기화
BIST Operation in Wafer Test
External Clock 1Ghz 필요
Command Generator
→ AC Parameter 간격 Setting 가능
Address Generator
→ XMARCH, YMARCH, RMW 등 Address Generator 주행 가능
BIST’s advantage in wafer test
Probe card interface’s max speed is 2Gbps
→ BIST is available to test high speed at low speed tester
Wafer High Speed Test - BIST
BIST Operation in Wafer Test
35 / 43
Summary
ICT Trends for Mobile Device-. Smartphone, Tablet devices growth rate get decreased-. Wearables, Automotives, Smart home will lead post mobile Era
Restrictions of Mobile DRAM Test-. Package ball type, size, fine pitch & warpage etc-. Wafer level test at-Speed & uBump probe-. Test cost increasing
DFT for Mobile DRAM test-. Advanced wafer burn-in stress-. Wafer test 1-T/D solution -. High speed test Technology-. Many IO’s test about IO DFx