december 2013 fqn1n50c n-channel qfet mosfet · december 2013 ©2001 fairchild semiconductor...
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December 2013
©2001 Fairchild Semiconductor Corporation FQN1N50C Rev C1
www.fairchildsemi.com1
FQN1N50CN-Channel QFET® MOSFET500 V, 0.38 A, 6 ΩDescription Features
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Thermal Characteristics
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
• 0.38 A, 500 V, RDS(on) = 6 Ω (Max.) @ VGS = 10 V, ID = 0.19 A
• Low Gate Charge (Typ. 4.9 nC)
• Low Crss (Typ. 4.1 pF)
• 100% Avalanche Tested
FQN1N
50C —
N-C
hannel QFET
® MO
SFET
Symbol Parameter FQN1N50CTA UnitRθJL Thermal Resistance, Junction-to-Lead, Max. 60 oC/WRθJA Thermal Resistance, Junction-to-Ambient, Max. 140
Symbol Parameter FQN1N50CTA Unit
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C) 0.38 A
- Continuous (TC = 100°C) 0.24 A
IDM Drain Current - Pulsed (Note 1) 3.04 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 44.4 mJ
IAR Avalanche Current (Note 1) 0.38 A
EAR Repetitive Avalanche Energy (Note 1) 0.21 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TA = 25°C) 0.89 W
Power Dissipation (TL = 25°C) 2.08 W
- Derate above 25°C 0.017 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds.
300 °C
(Note 5b)
(Note 5a)
TO-92G D S
G
S
D
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FQN1N
50C —
N-C
hannel QFET
® MO
SFET
©2001 Fairchild Semiconductor Corporation FQN1N50C Rev C1
Part Number Top Mark Package Packing Method Reel Size Tape Width QuantityTO-92 AMMO N/A N/A 2000 units
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
FQN1N50CTA 1N50C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V
∆BVDSS / ∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 50 µA
VDS = 400 V, TC = 125°C -- -- 250 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source On-Resistance
VGS = 10 V, ID = 0.19 A -- 4.6 6.0 Ω
gFS Forward Transconductance VDS = 40 V, ID = 0.19A -- 0.6 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 150 195 pF
Coss Output Capacitance -- 28 40 pF
Crss Reverse Transfer Capacitance -- 4.1 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 250 V, ID = 1.0 A,RG = 25 Ω
(Note 4)
-- 10 30 ns
tr Turn-On Rise Time -- 10 30 ns
td(off) Turn-Off Delay Time -- 20 50 ns
tf Turn-Off Fall Time -- 15 40 ns
Qg Total Gate Charge VDS = 400 V, ID = 1.0 A,VGS = 10 V
(Note 4)
-- 4.9 6.4 nC
Qgs Gate-Source Charge -- 0.66 -- nC
Qgd Gate-Drain Charge -- 2.9 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 0.38 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 3.04 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.38 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 1.0 A,dIF / dt = 100 A/µs
-- 188 -- ns
Qrr Reverse Recovery Charge -- 0.55 -- µC
Notes:1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 80 mH, IAS = 1.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 0.38 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating temperature.
5. a) Reference point of the RθJL is the drain lead.b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RθCA is determined by the user’s board design)
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FQN1N
50C —
N-C
hannel QFET
® MO
SFET
©2001 Fairchild Semiconductor Corporation FQN1N50C Rev C1
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
2 4 8 1010-1
100
150oC
25oC -55oC
※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test
I D, D
rain
Cur
rent
[A]
6
VGS, Gate-Source Voltage [V]
10-1 0 10110-2
10-1
100
VGSTop : 15.0 V
10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V
Bottom : 4.5 V
※ Notes : 1. 250µ s Pulse Test2. TC = 25
I D, D
rain
Cur
rent
[A]
10
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward VoltageVariation vs. Source Current
and Temperatue
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00
5
10
15
20
VGS = 20V
VGS = 10V
※ Note : TJ = 25
RD
S(O
N) [Ω
],D
rain
-Sou
rce
On-
Res
ista
nce
ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
150
※ Notes :1. VGS = 0V2. 250µ s Pulse Test
25
I DR, R
ever
se D
rain
Cur
rent
[A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10 2 65430
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
※ Note : ID = 1A
V GS,
Gat
e-So
urce
Vol
tage
[V]
QG, Total Gate Charge [nC]10-1 0 1010
100
200
300
400Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd
=Crss Cgd
* Note :1. VGS = 0 V2. f = 1 MHz
Crss
Coss
Ciss
Cap
acita
nces
[pF]
VDS,10
Drain-Source Voltage [V]
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FQN1N
50C —
N-C
hannel QFET
® MO
SFET
©2001 Fairchild Semiconductor Corporation FQN1N50C Rev C1
Typical Performance Characteristics (Continued)
ZθJ
C(t
), T
her
mal
Res
po
nse
[oC
/W]
Figure 8. On-Resistance VariationFigure 7. Breakdown Voltage Variationvs. Temperature vs. Temperature
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
※ Notes : 1. VGS = 0 V 2. ID = 250 µA
BVD
SS, (
Nor
mal
ized
)D
rain
-Sou
rce
Brea
kdow
n Vo
ltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes : 1. VGS = 10 V 2. ID = 0.19 A
RD
S(O
N),
(Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
25 50 75 100 125 1500.0
0.1
0.2
0.3
0.4
I D, D
rain
Cur
rent
[A]
TC, Case Temperature []100 101 102 103
10-3
10-2
10-1
100
101
100 ms
1 ms
10 µs
DC
10 ms
100 µs
Operation in This Area is Limited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
10 -5 10 -4 1 0 3- 1 0 2- 1 0 1- 1 0 0 1 0 1 10 2 1 0 3
1 0 -1
1 0 0
1 0 1
1 0 2
※ N o te s : 1 . Z
θ JL( t) = 60 /W M ax. 2 . D u ty D F a c to r, = t1/t2
3 . T JM - T L = P D M * Z qJC(t)s ing le pu lse
D = 0.5
0 .02
0 .2
0 .05
0 .1
0 .01
t1, S q ua re W ave P u lse D u ra tion [sec ]
t1
PDM
t2
www.fairchildsemi.com5
FQN1N
50C —
N-C
hannel QFET
® MO
SFET
©2001 Fairchild Semiconductor Corporation FQN1N50C Rev C1
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VVGSGS
VVDSDS
1010%%
90%90%
ttd(d(onon)) ttrr
tt onon tt ofofff
ttd(d(ooffff)) ttff
VVDDDD
VVDSDSRRLL
DUDUTT
RRGG
VVGSGS
ChaCharrgege
VVGSGS
10V10VQQgg
QQgsgs QQgdgdVVGSGS
DUDUTT
VVDSDS
300n300nFF
50K50KΩΩ
200n200nFF12V12V
SamSamee TTyypepeas as DUDUTT
===EEEASASAS --------21212121-------- LLL ASASASIII
BVBVDSSDSS222 ----------------------------------------
BVBVDSDSSS - V- VDDDD
VVDDDD
VVDSDS
BVBVDSDSSS
t t pp
VVDDDD
IIASAS
VVDS DS (t)(t)
IID D (t)(t)
TiTimmee
DUTDUT
RRGG
LLL
III DDD
t t pp
VVGSGS
VVGSGS
IG = const.
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Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body DiodeForward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse WidthGate Pulse Period
--------------------------
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LLI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body DiodeForward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse WidthGate Pulse Period
--------------------------D =Gate Pulse WidthGate Pulse Period
--------------------------
FQN1N
50C —
N-C
hannel QFET
® MO
SFET
©2001 Fairchild Semiconductor Corporation FQN1N50C Rev C1
www.fairchildsemi.com7
FQN1N
50C —
N-C
hannel QFET
® MO
SFET
©2001 Fairchild Semiconductor Corporation FQN1N50C Rev C1
Mechanical Dimensions
Figure 16. TO92, Molded, 3-Lead, 0.200 In Line Spacing LD Form (J61Z Option)
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AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
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SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™
Sync-Lock™®*
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UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
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Rev. I66
tm
®
FQN1N
50C —
N-C
hannel QFET
® MO
SFET
Obsolete
©2001 Fairchild Semiconductor Corporation FQN1N50C Rev C1