cr320 lecture solid state sintering
DESCRIPTION
CR320 Lecture Solid State SinteringTRANSCRIPT
Solid State Sintering
Sudip Dasgupta
Dept of Ceramic Engineering NIT Rourkela
CR 212
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 1 / 26
Chapter Outline
1 Sintering Mechanisms
2 Scaling Law
3 Stages of Sintering
4 Initial Stage
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 2 / 26
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 3 / 26
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 4 / 26
Sintering Mechanisms
3 Particle Model
Figure :Fig 2.1, Sintering of Ceramics, Rahaman, pg. 46
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 5 / 26
Sintering Mechanisms
Sintering Mechanisms and Routes
Mechanisms Source Sink DensifyingSurface Diffusion Surface Neck NoLattice Diffusion Surface Neck No
GB Diffusion GB Neck YesLattice Diffusion GB Neck YesVapor Transport Surface Neck No
Plastic Flow Dislocations Neck Yes
Note that mechanisms that extend the GB region (solid-solid interface) are densifying mechanisms. That keep the solid-vapor interface arenon-densifying mechanisms.
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 6 / 26
Sintering Mechanisms
3 Particle Model
Calculate the free energy (surface related) difference between a set of particles, and the same set of particles when sintered.
Note that the net reduction in energy would be equal to the total grain boundary energy less the total surface (solid-vapor) energy.
γgb∆Ed = As( 2 −
γsv)
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 7 / 26
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 8 / 26
Sintering Mechanisms
Curvature
Figure :Curvature in solids, and their effect of vacancy concentration
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 9 / 26
Sintering Mechanisms
Vacancy under a Curved SurfaceChemical potential of atoms in a crystal can be written as
µa = µoa + pΩa + kBT ln Ca
Similarly, chemical potential of vacancies in a crystal can be written as
µv = µov + pΩv + kBT ln Cv
Chemical potential of vacancies under a curved surface can be written as
µv = µov + (p + γsvκ)Ω + kBT ln Cv
where κ = 1 + 1 Accordingly, the equilibrium vacancy concentrationR1
R2
beneath a curved surface Cv = Co,ve
− γ svκΩ
kBT
For γsvκΩ << kBT, this reduces to
Co,v
Cv = 1 γsvκΩ−
kB
TSudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 10 / 26
Sintering Mechanisms
Vapor Pressure over a Curved Surface
Figure :Curvature in solids, and their effect on vapor pressure
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 11 / 26
Sintering Mechanisms
Vapor Pressure over a Curved Surface
Vapor pressure over a curved surface can be defined asγ svκ Ω
Pvap = P0e kBT
This simplifies to:
Pvap = P0
.1 + Bk
T
γsvκΩ .
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 12 / 26
Sintering Mechanisms
Diffusional Flux Equations
The general expression for flux:
J = −DiC dµ
kBT dxFlux of atoms:
Ja = − DaCa d(µa − µv)ΩkBTdxFlux of vacancies and atoms are opposite to each other:
Ja = −Jv
Flux of vacancies:
Jv = − DvCv
dµv= −Dv
dCvΩkBT dx Ωdx
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 13 / 26
Scaling Law
Herring’s Scaling Law
Length scale is an important parameter in sintering.How does the change of scale (e.g. particle size) influence the rate of sintering?The law is based on simple models and assumptions. Particle size remains the same.Similar geometrical changes in different powder systems. Similar composition.
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 14 / 26
Scaling Law
Herring’s Scaling Law
Define λ as the numerical factora1
Say, λ = a2 , where a is the radius of the particle
X1Similarly, λ = X2 , where X is the neck dimension of the two particle system.
Time required to produce a certain change by diffusional flux can be written as
V∆ t = JA
Comparing two systems, we can write ∆t2 = V2J1A1
∆ t1 V1J2A2
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 15 / 26
Scaling Law
Scaling Law for Lattice DiffusionWhile comparing two spherical particles of sizes, a1 and a2, we can say that 1 1 2
3 3a
2
2a1
the volume of matter transported is V ∝ a , and V ∝ a . And since λ =,we can write V2 =
λ3Va. Similarly A2 =
λ2A1Again, flux (J) is ∝ the gradient in chemical potential (i.e. dµ/dr)
r11 rµ varies as , Therefore, J ∝ ∇ Or J ∝ 1
r2
Therefore, J2 = J1
λ2
Summary: the parameters for lattice diffusion are:V2 = λ3V1; A2 = λ2A1; J2 = J1
λ2
Comparing two systems, we can write
∆ t1 a
1
∆t2 = λ3 = . a2
.
3
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 16 / 26
Scaling Law
Scaling Law for Other Mechanisms
In a general form, we can write as:
∆ t1
a1
∆t2 = λm = . a2
3
where m is the exponent that depends on the mechanism of sintering. Some of the exponents for different mechanisms are as follows.
Sintering Mechanisms ExponentSurface Diffusion 4Lattice Diffusion 3
GB Diffusion 4Vapor Transport 2
Plastic Flow 1Viscous Flow 1
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 17 / 26
Scaling Law
Relative Rates of Mechanisms
For a given microstructural change tha rate is inversely proportional to the time required for the change. Therefore,
Rate2 = λ− m
Rate1
If grain boundary diffusion is the dominant mechanism; then Rategb = λ− 4
If evaporation-condensation is the dominant mechanism; thenRateec = λ− 2
Figure :Relative rates of sintering for GB and EC as a function of length scale
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 18 / 26
Stages of Sintering
Generalized Sintering Curve
Figure :Schematic of a sintering curve of a powder compact during three sintering stages.
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 19 / 26
Stages of Sintering
Sintering Stages
SinteringStage
Microstructural Fea-tures
RelativeDensity
Idealized Model
Initial Interparticle neckgrowth
Up to0.65
Spheres in contact
Intermediate Equilibrium poreshape with continu- ous porosity
0.65 -0.9
Tetrakaidecahedronwith cylindrical pores of the same radius along edges
Final Equilibrium poreshape with isolated porosity
≥0.9 Tetrakaidecahedronwith spherical pores at grain corners
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 20 / 26
Stages of Sintering
Sintering Stage Microstructures (Real)
Initial stage (a)rapid interparticle growth (various mechanisms), neck formation, linear shrinkage of 3-5%.Intermediate stage (b) Continuous pores, porosity is along grain edges, pore cross section reduces, finally pores pinch off. Up to 0.9 of TD.Final stage (c)Isolated pores at grain corners, pores gradually shrink and disappear. From 0.9 to TD.
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 21 / 26
Tetrakaidecahedron
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 22 / 26
Stages of Sintering
Schematic of Intermediate and Final Stage Models
Figure :Idealized models of grains during (a) intermediate, and (b) final stage of sintering. After R L Coble
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 23 / 26
Initial Stage
Geometrical Model for Initial Stage
Figure :Geometrical models for the initial sintering stage; (a) non-densifying, and (b) densifying mechanism.
Non-densifying
Parameter Densifying
2r = X2a Radius of
Neck
2r = X4a
2 3
A = π Xa Area
of Neck Surface
2 3
A = π X2a
4
V = πX2a Volume
into Neck
4
V = πX8a
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 24 / 26
Initial Stage
Kinetic Equations
Flux of atoms into the neck
Ja = ΩDv
dCvdxVolume of matter transported to neck per unit time
dVa gb
= J A Ωd
t
Note that Agb = 2πXδgb Therefore,dVdt
= D 2πXδ
dCv
v gb
dxAssuming that the vacancy concentration between surface and neck remainsdx Xconstant d Cv = ∆Cv Therefore,
∆Cv = Cv − Cvo
= BCvoγsvΩ .
1 k Tr
+r1
2
1 .
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 25 / 26
Initial Stage
Kinetic Equations Contd..If we take r1 = r and r2 = −X, and assuming X >> r, we have
dV = 2πDvCvoδgbγsvΩdtkBTr
dt
Using dV from geometrical model, and Dgb = DvCvo, πX3 dX
2a dt
=kB
TX2
2πDgbδgbγsvΩa2 . 4a .
On simplification5X dX
=16D δ γ Ωa
2gb gb
sv
kBTdt
Upon integrating6 gb gb
sv96D δ γ Ωa
2
kB
T
tX =We can write in another form:
Xa =
kBTa4
.
96DgbδgbγsvΩa2 .
16
1
t 6
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 26 / 26
Initial Stage
Kinetic Equations Contd..
Xa =
kBTa4
1.
96DgbδgbγsvΩ .
6
1
t 6
1This expression tells you that the ratio of neck radius to the sphere radius increases as t 6 . For densifying mechanisms the shrinkage can be measured as the change in length over original length.
∆l = − r = − X2
l0 a4a2
Thereforel02kBTa4
∆ l = . 3DgbδgbγsvΩ
.
13 1
t 3
1The shrinkage is therefore predcited to increase as t 3
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 27 / 26
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 28 / 26
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 29 / 26
Initial Stage
Kinetic Equations for Viscous Flow
Rate of energy dissipation by viscous flow should equal to rate of energy gained by reduction in surface area.
The final expression looks like
X =a2ηa
1. 3γsv .
2
1
t 2
How would the expression for shrinkage by viscous flow look like?
l08ηa
∆ l = . 3γsv t
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 30 / 26
Initial Stage
Generalized Expressions
There can be general expressions for neck growth and densification as follows:
=. X . m . H .
a an
t
m. ∆ l . 2
l0
= −
H2ma
n
. .t
m, and n are numerical exponents that depend on sintering mechanisms. H contains geometrical and material parameters.A range of values for m and n can be obtained.
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 31 / 26
Initial Stage
Summary: Initial Sintering Stages
BT
Mechanism m n H ♥
Surface diffusion♦ 7 4 56DsδsγsvΩ/kBTLattice diffusion from sur-face♦
5 3 20DlγsvΩ/kBT
Vapor transport♦ 3 2 3P0γsvΩ/(2πmkBT)1/2k
GB diffusion 6 4 96DgbδgbγsvΩ/kBTLattice diffusion from GB 4 3 80πDlγsvΩ/kBTViscous flow 2 1 3γsv/2η
♦ - non-densifying mechanism♥ - Diffusion coefficients and constants with usual meanings.If you recall, the exponent n here is same as theHerring’s Scaling Law exponent.Also note that, for nondensifying mechanismsm is an odd number.
Sudip Dasgupta (NIT Rourkela) SINTERING CR 320 CR 654 32 / 26