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CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29

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Page 1: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

CMOS: Fabrication principles and design rules

João Canas Ferreira

University of PortoFaculty of Engineering

2016-02-29

Page 2: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Topics

1 Overview of the CMOS fabrication process

2 Geometric design rules

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Page 3: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

CMOS technology evolution

Fonte: [Weste11]

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 3 / 35

Page 4: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Ingots of doped silicone

Fonte: [May04]

à Diameters: 300 mm and 400 mm

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Page 5: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Czochralski method

Fonte: [May04]

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Page 6: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Ingot production

Fonte: [http://www.tf.uni-kiel.de/matwis/amat/elmat_en/kap_6/illustr/i6_1_2.html]

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 6 / 35

http://www.tf.uni-kiel.de/matwis/amat/elmat_en/kap_6/illustr/i6_1_2.html
Page 7: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Photolithography

Fonte: [Weste11]

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Page 8: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Masks

Fonte: [May04]

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Page 9: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Mask projection

Fonte: [May04]

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 9 / 35

Page 10: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Transfer

Fonte: [May04]

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 10 / 35

Page 11: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Optical correction (pre-distortion)

Fonte: [Weste11]

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 11 / 35

Page 12: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Inverter: cut view

Fonte: [Weste11]

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Page 13: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Inverter: masks

Fonte: [Weste11]

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Page 14: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Triple-well process

Fonte: [Weste11]

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Page 15: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Well isolation (trenches)

Fonte: [Weste11]

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Page 16: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Gate oxide

Fonte: [Weste11]

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Page 17: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Source and drain formation

Fonte: [Weste11]

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Page 18: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Improvements

Fonte: [Weste11]

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 18 / 35

Page 19: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Metal connections

Fonte: [Weste11]

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 19 / 35

Page 20: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Example: 11 levels of metal

Fonte: [Weste11]

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Page 21: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

If things go wrong . . .

Fonte: R. Rodríguez-Montañés et al., “Bridging Defects Resistance in the Metal Layer of a CMOS

Process”, J. Electronic Testing: Theory and Applications 8, 35–46 (1996)

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 21 / 35

Page 22: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Topics

1 Overview of the CMOS fabrication process

2 Geometric design rules

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 22 / 35

Page 23: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Design rules

I The geometric design rules are a “contract” between the foundry and thedesigner.

I These rules are the designer’s interface to the fabrication process.

I They guarantee that the transfers onto the wafer preserve the topologyand geometry of the patterns.

I Rules specify: minimum separations, minimum and maximum widths,overlap rules

I Scalable rules: distances are specified as multiples of λ

I Minimum gate width: 2λ

I Industrial processes generally state their rules in microns (non-scalable).

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Page 24: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Masks for an inverter (n-well)

Fonte: [Weste11]

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Substrate contacts

Fonte: [Weste11]

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Page 26: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Classes of rules

Well Definition of: p-well, n-well, deep-n-well. For twin-tubprocesses only one well may be specified (n-well).

Transistors Four masks:I active (diffusion), n-select (n-implant), p-select, polyI active + n-select + p-well + poly : NMOS transistorI active + p-select + n-well + poly : PMOS transistorI active + n-select + n-well + contact : contact to wellI active + p-select + p-well + contact : contact to well/substrate

Some systems create the active masks from the select masks.

Contacts One maskI metal1/p-active, metal/n-active, metal-poly, metal/substratoI fixed size; use more than one contact in parallel

Metal Rule values depend on the level (increasingly larger and moreseparated)Rules for connection between metal levels (vias): modernprocesses allow stacked vias.

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Page 27: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

FreePDK45: POLY rules

à http://www.eda.ncsu.edu/wiki/FreePDK45:Contents

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 27 / 35

http://www.eda.ncsu.edu/wiki/FreePDK45:Contents
Page 28: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

FreePDK45: WELL rules

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Page 29: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

FreePDK45: ACTIVE rules (DIFFUSION)

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Page 30: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

FreePDK45: regras IMPLANT (SELECT)

(Figure is confusing: active, n-well and n-implant layers have the same color!)João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 30 / 35

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FreePDK45: CONTACT rules

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Page 32: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

FreePDK45: METAL1 rules (1/2)

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Page 33: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

FreePDK45: METAL1 rules (2/2)

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Page 34: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

Once upon a time . . .

Fonte: [Weste11]

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Page 35: CMOS: Fabrication principles and design rules · CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29. Topics 1

References

à Sources of the figures:

May04 G.S. May, S. M. Sze, Fundamentals of Semiconductor Fabrication,Wiley, 2004.

Rabaey03 J. M. Rabaey et al, Digital Integrated Circuits, 2ndedition,Prentice Hall, 2003.http://bwrc.eecs.berkeley.edu/icbook/

Weste11 N. Weste, D. Harris, CMOS VLSI Design, 4th ed., PearsonEducation, 2011.http://www3.hmc.edu/~harris/cmosvlsi/4e/index.html

à The FreePDK45 Wiki specifies the FreePDK45 design rules:

http://www.eda.ncsu.edu/wiki/FreePDK45:Contents

João Canas Ferreira (FEUP) CMOS: Fabrication principles and design rules 2016-02-29 35 / 35

http://bwrc.eecs.berkeley.edu/icbook/
http://www3.hmc.edu/~harris/cmosvlsi/4e/index.html
http://www.eda.ncsu.edu/wiki/FreePDK45:Contents

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