cheminform abstract: metallorganic chemical vapor deposition of pb(zr,ti)o3 films using a single...

2002 lead, Pb lead, Pb I 4900 02 - 020 Metallorganic Chemical Vapor Deposition of Pb(Zr,Ti)O 3 Films Using a Single Mixture of Metallorganic Precursors. — Films of the title compound are deposited using a mixture of Pb(tmhd) 2 , Ti(OiPr) 2 (tmhd) 2 , and Zr 2 (OiPr) 6 (tmhd) 2 (tmhd: 2,2,6,6-tetramethyl-3,5-heptanedionate) as the chemical vapor deposition source at substrate temperatures of 470–530 ◦ C. The samples are characterized by SEM and XPS. With increasing substrate temperature the deposition rates of Pb and Ti increase, while that of Zr remains almost constant. — (KIM, DAE-HWAN; NA, JEONG SEOK; RHEE, SHI-WOO; J. Electrochem. Soc. 148 (2001) 10, C668-C673; Dep. Chem. Eng., Pohang Univ. Sci. Technol., Pohang 790-784, S. Korea; EN) 1

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Page 1: ChemInform Abstract: Metallorganic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Films Using a Single Mixture of Metallorganic Precursors

2002 lead, Pb

lead, PbI 4900

02 - 020Metallorganic Chemical Vapor Deposition of Pb(Zr,Ti)O3 FilmsUsing a Single Mixture of Metallorganic Precursors. — Films of thetitle compound are deposited using a mixture of Pb(tmhd)2, Ti(OiPr)2(tmhd)2,and Zr2(OiPr)6(tmhd)2 (tmhd: 2,2,6,6-tetramethyl-3,5-heptanedionate) as thechemical vapor deposition source at substrate temperatures of 470–530 ◦C.The samples are characterized by SEM and XPS. With increasing substratetemperature the deposition rates of Pb and Ti increase, while that of Zrremains almost constant. — (KIM, DAE-HWAN; NA, JEONG SEOK; RHEE,SHI-WOO; J. Electrochem. Soc. 148 (2001) 10, C668-C673; Dep. Chem. Eng.,Pohang Univ. Sci. Technol., Pohang 790-784, S. Korea; EN)

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