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Chen Xiaofei CMOS Chapter3 2
Overview
• Reading
– Chapter 3• Introduction
In this lecture, we study the low-frequency behavior of single-stage CMOS amplifiers. Analyzing both the large-signal and the small-signal characteristics of each circuit, we develop intuitive techniques and models that prove useful in understanding more complex systems.
Following a brief review of basic concepts, we describe in this chapter four types of amplifiers:
---Common-Source Amplifier---Common-Gate Amplifier---Source Followers---Cascode
Chen Xiaofei CMOS Chapter3 3
Table of Content
• Analog Design
• Common-Source Amplifier
• Source Followers
• Common-Gate Amplifier
• Cascode
Chen Xiaofei CMOS Chapter3 5
3.1 Analog Design
Tradeoffs
Most of these parameterstrade with each other. Such trade-offs lead to many challenges in thedesign of high performanceamplifiers.
Chen Xiaofei CMOS Chapter3 6
DC and ac Analysis
• DC Analysis (Large-Signal Analysis)--- Determine the exact biasing.
• ac Analysis (Small-Signal Analysis)--- Obtain the expression of the voltage gain,
small-signal input and output impedance.
Chen Xiaofei CMOS Chapter3 8
Common-Source Amplifier Table of Content
• Common Source (CS) with Resistive Load
• CS stage with diode-connected MOS load
• CS with Current Source Load
• CS with Triode Region Load
• CS with source degeneration
Chen Xiaofei CMOS Chapter3 9
3.2.1 Common Source (CS) with Resistive Load
• Resistive Load is often used in high-speed circuit because of the linearity of resistance, and also the output voltage swing may reach up to VDD.
Fig. 3.1 (a) CS Stage; (b) input-output characteristic; (c) equivalent circuit in deep triode region
Chen Xiaofei CMOS Chapter3 10
DC Analysis
• DC Analysis (Large-Signal Analysis)(1) When V in < VTH , M1 is in cut-off region, Id=0, Vout=VDD-IdRD=VDD
(2) When V in > VTH , and V in < V in1 , M1 is in saturation region.
DTHinoxn
DDout RVVLWCVV 2)(
2−−=
μ
Here we have neglected channel length modulation.
DTHinoxn
DDTHin RVVL
WCVVV 211 )(
2−−=−
μ
From which Vin1-VTH and hence Vout can be calculated.
(3) When Vin − VTH = Vout , M1 is at the boundary of saturation and triode regions.
HTDD
in VV
V +−+
=α
α2
1411 where DPNDoxn R
LWkR
LWC )(
21)(
21
== μα
oxP Ck μ= ....Technology parameter
Chen Xiaofei CMOS Chapter3 11
DC Analysis (Cont.)
(4) For Vin > Vin1, M1 is in the triode region,
])(2[2
2outoutTHinD
oxnDDout VVVVR
LWCVV −−−=
μ
As VGS has less control on Id when transistor M1 works in triode region, we usually leave M1 in saturation for a large voltage gain.
If Vin is high enough to drive M1 into deep triode region. Vout<<2(Vin-VTH),and,
In very deep triode range, Ron→0, Vout →0
)(1 THinDoxn
DD
Don
onDDout
VVRLWC
VRR
RVV−+
=+
=μ
Chen Xiaofei CMOS Chapter3 12
AC Analysis
• AC Analysis (Small-Signal Analysis)(1) Derivation at the operation point
Assuming that the transistor is biased in strong inversion, active region
Taking the derivative of Vout with respect to Vin, we get,
DmTHinoxnDin
outv RgVV
LWCR
dVdVA −=−−== )(μ
DTHinoxn
DDout RVVLWCVV 2)(
2−−=
μ
Chen Xiaofei CMOS Chapter3 13
AC Analysis (Cont.)
(2) Finding the gain using the small-signal equivalent circuit
Fig. 3.2 (a) CS Stage; (b) small-signal equivalent circuit
Chen Xiaofei CMOS Chapter3 14
AC Analysis (Cont.)
Dmv RgA −=
This result can be directly derived from the observation that M1 converts an input voltage change ΔVin to a drain current change gmΔVin , and hence an output voltage change - gmRDΔVin .
(3) Intuitive observation
Chen Xiaofei CMOS Chapter3 15
AC Analysis (Cont.)
• Taking the effect of channel length modulation in M1 into account, the small-signal equivalent circuit is modified as following,
)( oDmv rRgA −=
Fig.3.3 small-signal equivalent circuit including the output resistance of M1
Chen Xiaofei CMOS Chapter3 16
Intrinsic Gain
• Intrinsic Gain
If RD=∞, then
called the “intrinsic gain” of a transistor, this quantity represents the maximum voltage gain that can be achieved using a single device. For ideal long-channeldevice, ro→∞, intrinsic gain →∞; however, in today’s Fig 3.4
CMOS technology, intrinsic gain of short-channel deviceis between roughly 10 and 30. Thus, we usually assume 1/gm << ro .
Question?: In Fig.3.4, Kirchhoff’s current law (KCL) requires that ID1 = I1. Then, how can Vin change the current of M1 if I1 is constant?
omv rgA −=
Chen Xiaofei CMOS Chapter3 17
Common-Source Amplifier Table of Content
• Common Source (CS) with Resistive Load
• CS stage with diode-connected MOS load
• CS with Current Source Load
• CS with Triode Region Load
• CS with source degeneration
Chen Xiaofei CMOS Chapter3 18
3.2.2 CS stage with diode-connected MOS load
A MOST can operate as a small-signal resistor if its gate and drain are shorted, called “diode-connected”.
• what is the impedance of the following circuit seen from the source side of transistor M1?
Chen Xiaofei CMOS Chapter3 19
The small-signal equivalent resistance of diode-connected MOS load
sdsmbm
sdssmbsm
dsssbmbgsms
vgggvgvgvg
gvvgvgi
)( ++=++=
+−−=
mbmdsmbmmin gggggy
r+
≈++
==111
Seen from source terminal, the small signal conductance is given by
or, the resistance is
)( dsmbms
sin ggg
viy ++==
(1/gm << ro)
Chen Xiaofei CMOS Chapter3 20
Gain (Av)
Av = −gm1 1
gm2 + gmb2= −
gm1
gm2
11 +η
Av = −(W / L)1
(W / L)2
11 + η
Av = −un (W / L)1
up (W / L)2
Gain is independent of bias current!
Chen Xiaofei CMOS Chapter3 21
Voltage swing constraint
Av = −un (W / L)1
up (W / L)2
=| VGS2 − VTH2 |(VGS1 − VTH1)
∴= ,21 DD II
This implies substantial voltage swing constraint.
unWL
⎛ ⎝
⎞ ⎠
1(VGS1 − VTH1)2 =up
WL
⎛ ⎝
⎞ ⎠
2(VGS2 − VTH2)2
Chen Xiaofei CMOS Chapter3 22
Advantage of CS with diode-connected load
• Advantage of CS with diode-connected load: linearity
Av = −(W / L)1
(W / L)2
11 + η
This equation imply: if the variation of ηwith the output voltage is neglected, the gain is independent of the bias currents and voltages (so long as the M1 stays in saturation. In other words, as the input and output signal levels vary, the gain remains relatively constant, indicating that the input-output characteristic is relatively linear.
• Homework: Please do large-signal analysis of this circuit to
determine the biasing range.
Chen Xiaofei CMOS Chapter3 23
Large-signal analysis
VoutVout,max
=VDD-VTH
Vout,swing
Vout,min=Vin,max-VTH
VTH Vin,max’Vin,swing
Vin
Vout=Vin-VTH
P
maxin TH out outV V V V− ≤ ≤
( )2
1 ,max1
12 n OX in TH
WI C V VL
μ ⎛ ⎞= −⎜ ⎟⎝ ⎠
2,min
1
12 n OX out
WC VL
μ ⎛ ⎞= ⎜ ⎟⎝ ⎠
( )22 1 2
2
12 n OX GS TH
WI I C V VL
μ ⎛ ⎞= = −⎜ ⎟⎝ ⎠
( )2
,min2
12 n OX DD out TH
WC V V VL
μ ⎛ ⎞= − −⎜ ⎟⎝ ⎠
max,ininTH VVV ≤≤
At point P,
Chen Xiaofei CMOS Chapter3 28
Common-Source Amplifier Table of Content
• Common Source (CS) with Resistive Load
• CS stage with diode-connected MOS load
• CS with Current Source Load
• CS with Triode Region Load
• CS with source degeneration
Chen Xiaofei CMOS Chapter3 29
3.2.3 CS with Current Source Load
Av = −gm ro1 || ro2
Assuming ro2 large,
Av = −gmro1 = − 2μnCox IDWL
⎛
⎝
⎜ ⎜ ⎜
⎞
⎠
⎟ ⎟ ⎟
1
1λID
Chen Xiaofei CMOS Chapter3 30
CS with Current Source Load (cont.)
• Discussions:(1) Gain increasing:a) increase ro1 and ro2 ,
so increase L is an effective method.b) increase gm1,
Increasing W while keeping the Vov and L constant, gm1 increases.Note: increasing Vov is no use, as
11
oD
rIλ
=1L
λ ∝ oD
LrI
∝
1 ( )m n ox GS THWg C V VL
μ= −
2( )D GS THI V V∝ −
Chen Xiaofei CMOS Chapter3 31
CS with Current Source Load (cont.)
• (2) Design consideration:a) When requiring a large voltage gain, we usually design the
device with a large L2 of load M2 and a large W1 of M1, large L1 is not must.
b) If L1 is scaled by a factor n (>1), then W1 may need to be scaled proportionally as well. This is because, if W1 is not scaled, the overdrive voltage increases, limiting the output voltage swing.
Chen Xiaofei CMOS Chapter3 32
CS with Current Source Load (cont.)
• Classroom Exercise: Please do large-signal analysis of this circuit to determine the biasing range.
• Advantage of CS with current source Load : the output impedance and the minimum required VDS of M2 are less strongly coupled than the value and voltage drop of a resistor.
Chen Xiaofei CMOS Chapter3 33
Common-Source Amplifier Table of Content
• Common Source (CS) with Resistive Load
• CS stage with diode-connected MOS load
• CS with Current Source Load
• CS with Triode Region Load
• CS with source degeneration
Chen Xiaofei CMOS Chapter3 34
3.2.4 CS with Triode Region Load
Av = −gmRON2
|)|(1
2
2THPbDDL
WoxpON VVVC
R−−
=⎟⎟⎠
⎞⎜⎜⎝
⎛μ
Chen Xiaofei CMOS Chapter3 35
Common-Source Amplifier Table of Content
• Common Source (CS) with Resistive Load
• CS stage with diode-connected MOS load
• CS with Current Source Load
• CS with Triode Region Load
• CS with source degeneration
Chen Xiaofei CMOS Chapter3 36
CS with source degeneration
• The transconductance of the circuit---Gm
• The small-signal equivalent circuit( Assuming λ =γ = 0 )• Linearity discussion• Intuitive analysis and large-small characteristic• Example 3.5• Gm ( λ ≠ 0 ,γ≠ 0 )• Output Resistance• Gain (Av)• Example 3.6
Chen Xiaofei CMOS Chapter3 37
3.2.5 CS with source degeneration
• In some applications, the square-law dependence of the drain current upon the overdrive voltage introductions excessive nonlinearity, making it desirable to “soften” the device characteristic.
• In 3.2.2, we noted the linear behavior of a CS stage using a diode-connected load, but this topology has substantial voltage swing constraint.
• Some other method?
Chen Xiaofei CMOS Chapter3 38
The transconductance of the circuit---Gm
GS GSD Dm m
in GS in in
V VI IG gV V V V
∂ ∂∂ ∂= = ⋅ =
∂ ∂ ∂ ∂
GS in D SV V I R= −
1 1GS DS m S
in in
V I R G RV V
∂ ∂= − = −
∂ ∂
( )1m m m SG g G R= − 1m
mm S
gGg R
=+
1m D
V m Dm S
g RA G Rg R
= − = −+
•Define: Gm----the transconductance of the circuit when the output is shorted to ground.
Chen Xiaofei CMOS Chapter3 40
Linearity discussion
• With source degeneration, the transconductance is more linear !!As Rs increases, Gm becomes a weaker function of gm and hence the
drain current.
Chen Xiaofei CMOS Chapter3 41
Intuitive analysis and large-small characteristic
Sm
D
Sm
Dmv Rg
RRg
RgA+
−=+
−=
/1
1
Drain current and transconductance of a CS device (a) without and (b) with source degenaration.
Chen Xiaofei CMOS Chapter3 42
Example 3.5
• Assuming λ =γ = 0 for both M1 and M2. Calculate the small signal gain.
Chen Xiaofei CMOS Chapter3 43
Example 3.5 (cont.)
• Recall the result from common source stage with source degeneration :
Chen Xiaofei CMOS Chapter3 44
Gm of CS with source degeneration
• What is the transconductance of the circuit (Gm) if we do not ignore λand γ ?
Chen Xiaofei CMOS Chapter3 45
Gm of CS stage with source degeneration (cont.)
osmbms
omm rRggR
rgG])(1[ +++
=or,
Chen Xiaofei CMOS Chapter3 46
Output Resistance
osombmout rRrggr +++= ])(1[
•Another importance consequence of source degeneration is the increase of the output impedance of the stage.
Chen Xiaofei CMOS Chapter3 47
Gain (Av)
osmbmosD
Dom
in
outv rRggrRR
RrgvvA
)( ++++−==
) ||( outDmv rRGA −=
Lemma: In a linear circuit, the voltage gain is equal to -GmRout
Chen Xiaofei CMOS Chapter3 48
Example 3.6
|| outDmv rRGA −=
}])(1{[|| || osombmoutD rRrggrR +++∞=
Av = −gmro !
Gm =gmro
RS + [1+ (gm + gmb )RS ]ro
Why? Please explain this result.
Chen Xiaofei CMOS Chapter3 50
Table of Content
• Analog Design
• Common-Source Amplifier
• Source Followers
• Common-Gate Amplifier
• Cascode
Chen Xiaofei CMOS Chapter3 51
3.3 Source Follower (Common Drain Amplifiers)
• Our analysis of the CS stage indicates that, to achieve a high voltage gain with limited supply voltage, the load impedance must be as large as possible. If such a stage is to drive a low-impedance load, then a “buffer” must be placed after the amplifier so as to drive the load with negligible loss of the signal level. The source follower (also called the common-drain stage) can operate as a voltage buffer.
• The common drain stage exhibits high input impedance and low output impedance. After an analysis of relevant port characteristics, we will discuss some potential applications andalso drawbacks of this circuit.
Chen Xiaofei CMOS Chapter3 52
Source Follower (cont.)
Input terminal: gate; output terminal: source.
Chen Xiaofei CMOS Chapter3 53
Large signal behavior
• Large signal behavior
• When Vin<VTH, M1 is off, and Vout is 0.
• When Vin>VTH, M1 turns on in saturation. As Vin increases further, Vout follows Vin with a difference of VGS.
• When Vin increases to a certain voltage (exceeding VDD), M1 enters triode region, the output voltage flattens out and clips at VDD.
Chen Xiaofei CMOS Chapter3 56
Small signal analysis (cont.)
• Interesting cases– Rs→∞, ro→∞, gmb=0
• PMOS, source tied to body, ideal current source
– Rs→∞, ro→∞, gmb≠0 • NMOS, ideal current source) (typically ≅ 0.8)
– ro→∞, gmb=0, Rs finite• PMOS, source tied to body, load resistor
bmdsLtot gg
RsR 11=
Ltotm
mv
Rg
gA 1+
=
Chen Xiaofei CMOS Chapter3 57
Small Signal Output Resistance
• Small signal diagram for calculating output resistance
Chen Xiaofei CMOS Chapter3 59
Application 1: Level Shifter
• Output quiescent point is roughly VTH+Vov lower than inputquiescent point
Chen Xiaofei CMOS Chapter3 60
Application 2: Buffer
• Low frequency voltage gain of the above circuit is ~gmRbig– Would be ~gm(Rsmall||Rbig) without CD buffer stage
Chen Xiaofei CMOS Chapter3 61
Issues
• Several sources of nonlinearity– VTH is a function of Vo (NMOS, without S to B connection)– ID and thus Vov changes with Vo
! Gets worse with small RL
• Reduced input and output voltage swing– Consider e.g. VDD=1V, VTH=0.3V, VOV=0.2V
! CD buffer stage consumes 50% of supply headroom!– In low VDD applications that require large output swing, using a CD buffer is often not possible– CD buffers are more frequently used when the required swing is small
! E.g. pre-amplifiers or LNAs that turn μV into mV at the output
Chen Xiaofei CMOS Chapter3 63
Table of Content
• Analog Design
• Common-Source Amplifier
• Source Followers
• Common-Gate Amplifier
• Cascode
Chen Xiaofei CMOS Chapter3 64
3.4 Common Gate Stage
Fig.1 CG stage with (a) direct coupling at input (b) capacitive coupling at input.
• In a common-gate amplifier, the input signal is applied to the source terminal, as is shown in Fig.1. It senses the input at the source and generate the output at the drain. The gate is connected to a dc voltage to establish proper operating conditions. Note that in Fig.1(b) the bias current of M1 flows through the input signal source.
Chen Xiaofei CMOS Chapter3 65
Large signal behavior
• When Vin>VB-VTH, M1 is off, and Vout is VDD.• As Vin decreases, so does Vout, M1 is in saturation until
• After that, M1 is driven into the triode region.
Chen Xiaofei CMOS Chapter3 66
Small signal analysis (1)---- CG Current Transfer
Define: gm’ = gm + gmb
Chen Xiaofei CMOS Chapter3 68
Small signal analysis (2)---- Voltage Gain
DDSSombmo
ombm
in
outv R
RRRrggrrgg
vvA
++++++
==)(
1)(
Chen Xiaofei CMOS Chapter3 69
Small Signal Input Resistance
Two interesting cases:
tstttsmbmtstotstD vvggiriR =+−+ ])([
)1()(
1)(1
o
D
mbm
ombm
oD
tst
tstin
rR
gg
rggrR
ivr
++
≈
+++
==
– RD<<ro:
– RD>>ro:
Thus,
(If (gm+gmb)ro>>1)
)(1
mbmin gg
r+
≈
ombm
Din rgg
Rr)( +
≈
Chen Xiaofei CMOS Chapter3 70
Small Signal Output Resistance
oSombmout rRrggr +++= ])(1[
(Very high if (gm+gmb)RS>>1 !)
Chen Xiaofei CMOS Chapter3 71
CG Summary
• Current gain is unity up to very high frequencies• Input impedance is very low
– At least when the output is also terminated with some reasonable impedance
• Can achieve very high output resistance• In summary, a common gate stage is ideal for turning a decent
current source into a much better one– Seems like this is something we can use to improve our
common source stage• Which is indeed nothing but a decent (voltage
controlled) current source
Chen Xiaofei CMOS Chapter3 73
Table of Content
• Analog Design
• Common-Source Amplifier
• Source Followers
• Common-Gate Amplifier
• Cascode
Chen Xiaofei CMOS Chapter3 74
Overview
• We will cover different cascode amplifiers, including
– 1. Simple cascode amplifier
– 2. Multi-level cascode amplifier
– 3. Folded cascode amplifier
Chen Xiaofei CMOS Chapter3 75
Simple cascode amplifier
Simple cascode amplifier
• Large signal behavior (Vin fixed to VG1, Vout (VDS) sweeping from 0 to 3V)
Region I: M1B and M2B both in triode; Region II, M1B in saturation, M2B in triode; Region III, M1B and M2B both in saturation
Chen Xiaofei CMOS Chapter3 76
Small Signal Output Resistance
)]([ ])(1[
2221
21222
mbmoo
ooombmout
ggrrrrrggr
+≈+++=
Chen Xiaofei CMOS Chapter3 77
Transconductance Gm
222
1
11 1
ombm
o
oinmout
rgg
r
rvgi
++
=
222
1
11 1
ombm
o
oinmout
rgg
r
rvgi
++
=
1 1 2 2 2
1 2 2 2 1 2
11
2 2 2 1
[ ( ) 1]( )
[1 ]
m o o m mbm
o o m mb o o
dsm
m mb ds ds
g r r g gGr r g g r r
ggg g g g
+ +=
+ + +
= −+ + +
Chen Xiaofei CMOS Chapter3 78
Transconductance Gm (cont.)
• Observation: Compared with a single-transistor common source amplifier with a transconductance of |Gm|=gm1 (Note that Gm is the transcoducance of the amplifier, and gm is the transcoducance of the transistor), the transcoductance of cascode amplifier is slightly less, whose transconductance Gm is given by
• DC voltage gain (when the output is open)
11 1
2 2 2 1
[1 ] (90% ~ 99%)dsm m m
m mb ds ds
gG g gg g g g
= − =+ + +
1 1 2 2 2[( ) 1]m out m o m mb oAv G r g r g g r= − = − + +
Chen Xiaofei CMOS Chapter3 79
Multi-level cascode amplifier
• Triple cascode amplifier
}])(1){[( 332122233 ooooombmmbmout rrrrrggggr +++++=
]1[1222
11
dsdsmbm
dsmm gggg
ggG+++
−−≈
]1)][()(1[ 33322211 ++++= ombmombmom rggrggrgAv
Chen Xiaofei CMOS Chapter3 80
Supply Headroom Issue
• Even if we adjust VB suchthat VDS1 is small, adding a cascode reduces the available signal swing
• This can be a big issuewhen designing circuitswith VDD ≅ 1V
– Typically need each VDS > ~0.2V
Chen Xiaofei CMOS Chapter3 81
Folded-cascode amplifier
Fig.1 (a) Simple folded cascode, (b) folded cascode with proper biasing, (c) folded cascode with NMOS input
• Why choose folded-cascode amplifier instead of telescopic configuration? – More freedom to choose the DC input voltage at vin (such as Fig. 1(a)). – Convenience in shorting the input and the output in feedback
configurations.
Chen Xiaofei CMOS Chapter3 82
Large signal behavior
Fig. 2 Large-signal characteristics of folded cascode
• Suppose in Fig.1(b), I1 is the current flowing through M3 and is equal to the sum of ID1 and ID2.– Vin > VDD-|VTH1|, M1 is off and M2 carries all of I1, yielding Vout=VDD-I1RD. – For Vin<VDD-| VTH1 |, M1 turns on in saturation. – As Vin drops, ID2 decreases further, falling to zero if ID1=I1 (Vin=Vin1). – If Vin<Vin1, M1 enters triode.
Chen Xiaofei CMOS Chapter3 83
Small signal Analysis
• The small-signal operation is as follows: If vin becomes more positive, |id1| decreases, forcing id2 to increase and hence vout to drop. The voltage gain and output resistance of the circuit can be obtained as calculated for the telescopic-cascode. This approximation approach is sufficient, because, in fact, currentsource Iss is a MOS constant current source and it’s output resistance is very large, while CG stage’s input resistance is relatively small, thus the shunting of Iss from the small-signal current can be ignored.
Chen Xiaofei CMOS Chapter3 84
Folded-cascode amplifier summary
• Why choose folded-cascode amplifier instead of telescopic configuration? – More freedom to choose the DC input voltage at vin
(such as Fig. 1(a)). – Convenience in shorting the input and the output in
feedback configurations. • Disadvantages:
-- The total bias current in folded-cascode amplifier must be higher than that in telescopic configuration to achieve comparable performance.
-- Other disadvantages will be discussed in Chapter 6.