c mos- ic''s -data -book
TRANSCRIPT
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 1/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 2/449
CMOS L
Rev.
This book presents technical data for the broad line of CMOS logic integrated circuits and demonductor’s continued commitment to Metal–Gate CMOS. Complete specifications are provided in theIn addition, a Product Selector Guide and a Handling and Design Guidelines chapter have been incthe user with these circuits.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 3/449
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves thwithout further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its ppurpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically discincluding without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCIspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, inclvalidated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent righSCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the bintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation whermay occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indand its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, evenSCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Empl
PUBLICATION ORDERING INFORMATION
CENTRAL/SOUTH AMERICA:Spanish Phone: 303–308–7143 (Mon–Fri 8:0
Email: ONlit–[email protected]
ASIA/PACIFIC: LDC for ON Semiconductor – APhone: 303–675–2121 (Tue–Fri 9:00am to 1:0
NORTH AMERICA Literature Fulfillment:Literature Distribution Center for ON SemiconductorP.O. Box 5163, Denver, Colorado 80217 USAPhone: 303–675–2175 or 800–344–3860 Toll Free USA/CanadaFax: 303–675–2176 or 800–344–3867 Toll Free USA/CanadaEmail: ONlit@hibbertco com
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 4/449
Table of Contents
Chapter 1 — Master Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Alphanumeric Listing of All CMOS Part Numbers with Function and Page Number Information Prov
Chapter 2 — Product Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CMOS Selection Guide Sorted by Product Function
Chapter 3 — Reliability Audit Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Explanation of On Semiconductor’s Outgoing Product Performance Audit Program
Chapter 4 — B and UB Series Family Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Explanation of Standardized Specifications for the Product Family
Chapter 5 — CMOS Handling and Design Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Handling Precautions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Protection Network . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Propagation Delay and Rise Time versus Series Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CMOS Latch Up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chapter 6 — CMOS Logic Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
See the Master Index for Page Numbering Information
Chapter 7 — CMOS Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Basic Concepts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Air Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Optimizing the Long Term Reliability of Plastic Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chapter 8 — Equivalent Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chapter 9 — Packaging Information Including Surface Mounts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ON Semiconductor Major Worldwide Sales Offices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ON Semiconductor Standard Document Type Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 5/449
ALExIS, Bullet–Proof, CHIPSCRETES, Designer’s, DUOWATT, E–FET, EASY SWITCHER, ECL300, ECECLinPS Plus, ELite, EpiBase, Epicap, EZFET, FULLPAK, GEMFET, ICePAK, L2TMOS, MCCS, MDTL,
MHTL, MiniMOS, MiniMOSORB, Mosorb, MRTL, MTTL, Multi–Pak, ON–Demand, PowerBase,
SCANSWITCH, SENSEFET, SLEEPMODE, SMALLBLOCK, SMARTDISCRETES, SMARTswitc
SuperLock, Surmetic, SWITCHMODE, Thermopad, Thermowatt, TMOS, TMOS & Design Device, TM
UNIT/PAK, Uniwatt, WaveFET, Z–Switch and ZIP R TRIM are trademarks of Semiconductor Compo
(SCILLC).
HDTMOS and HVTMOS are registered trademarks of Semiconductor Components Industries, LLC (SC
All other brand names and product names appearing in this publication are registered trademarks o
respective holders.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 6/449
CH
Mas
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 7/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 8/449
MASTER INDEX
Device Function
MC14001B Quad 2–Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14001UB Quad 2–Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14007UB Dual Complementary Pair Plus Inverter . . . . . . . . . . . . . . . . . . . . . . . . .
MC14008B 4–Bit Full Adder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14011B Quad 2–Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14011UB Quad 2–Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14013B Dual D Flip–Flop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14014B 8–Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14015B Dual 4–Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14016B Quad Analog Switch/Multiplexer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14017B Decade Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14018B Presettable Divide–by–N Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14020B 14–Bit Binary Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14021B 8–Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14022B Octal Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14023B Triple 3–Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14024B 7–Stage Ripple Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14025B Triple 3–Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14027B Dual J–K Flip–Flop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14028B BCD–to–Decimal/Binary–to–Octal Decoder . . . . . . . . . . . . . . . . . . . . .
MC14029B Presettable Binary/BCD Up/Down Counter . . . . . . . . . . . . . . . . . . . . . .
MC14040B 12–Bit Binary Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14042B Quad Transparent Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14043B Quad NOR R–S Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14044B Quad NAND R–S Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14046B Phase–Locked Loop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14049B Hex Inverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14049UB Hex Inverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14050B Hex Noninverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14051B 8–Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . . . . . . .
MC14052B Dual 4–Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . . .MC14053B Triple 2–Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . .
MC14060B 14–Bit Binary Counter and Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14066B Quad Analog Switch/Multiplexer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14067B 16–Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . . . . . .
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 9/449
Device Function
MC14081B Quad 2–Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14082B Dual 4–Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14093B Quad 2–Input NAND Schmitt Trigger . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14094B 8–Stage Shift/Store Register with Tri–State Outputs . . . . . . . . . . . . . . .
MC14099B 8–Bit Addressable Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14106B Hex Schmitt Trigger . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14174B Hex D Flip–Flop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14175B Quad D Flip–Flop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14490 Hex Contact Bounce Eliminator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14503B Hex 3–State Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14504B TTL or CMOS to CMOS Hex Level Shifter . . . . . . . . . . . . . . . . . . . . . . MC14511B BCD–to–7–Segment Latch/Decoder/Driver . . . . . . . . . . . . . . . . . . . . . .
MC14512B 8–Channel Data Selector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14513B BCD–to–7–Segment Latch/Decoder/Driver with Ripple Blanking . . . .
MC14514B 4–Bit Transparent Latch/4–to–16 Line Decoder (High) . . . . . . . . . . . . .
MC14515B 4–Bit Transparent Latch/4–to–16 Line Decoder (Low) . . . . . . . . . . . . .
MC14516B Presettable Binary Up/Down Counter . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14517B Dual 64–Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14518B Dual BCD Up Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14520B Dual Binary Up Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14521B 24–Stage Frequency Divider . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14526B Presettable 4–Bit Binary Down Counter . . . . . . . . . . . . . . . . . . . . . . . . .
MC14528B Dual Monostable Multivibrator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14532B 8–Bit Priority Encoder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14536B Programmable Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14538B Dual Precision Monostable Multivibrator . . . . . . . . . . . . . . . . . . . . . . . . MC14541B Programmable Oscillator/Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14543B BCD–to–7–Segment Latch/Decoder/Driver for Liquid Crystals . . . . . .
MC14549B Successive Approximation Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14551B Quad 2–Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . .
MC14553B 3–Digit BCD Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14555B Dual Binary to 1–of–4 Decoder (Active High Outputs) . . . . . . . . . . . . .
MC14556B Dual Binary to 1–of–4 Decoder (Active Low Outputs) . . . . . . . . . . . . . .
MC14557B 1–to–64 Bit Variable Length Shift Register . . . . . . . . . . . . . . . . . . . . . . .
MC14559B Successive Approximation Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14562B 128–Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14569B Programmable Dual 4–Bit Binary/BCD Down Counter . . . . . . . . . . . . .
MC14572UB Hex Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 10/449
CH
Product Select
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 11/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 12/449
CMOS Selection Guide by Function
Device Function
NAND Gates
MC14011B Quad 2–Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14011UB Quad 2–Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14093B Quad 2–Input NAND Schmitt Trigger . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14023B Triple 3–Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NOR GatesMC14001B Quad 2–Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14001UB Quad 2–Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14025B Triple 3–Input NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AND GatesMC14081B Quad 2–Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14073B Triple 3–Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14082B Dual 4–Input AND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Complex Gates
MC14070B Quad Exclusive OR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14077B Quad Exclusive NOR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14572UB Hex Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inverters/Buffers/Level TranslatorMC14007UB Dual Complementary Pair Plus Inverter . . . . . . . . . . . . . . . . . . . . . . . . . MC14049B Hex Inverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14049UB Hex Inverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14050B Hex Noninverting Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14069UB Hex Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14503B Hex 3–State Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14504B TTL or CMOS to CMOS Hex Level Shifter . . . . . . . . . . . . . . . . . . . . . . MC14584B Hex Schmitt Trigger . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Decoders/EncodersMC14028B BCD–to–Decimal/Binary–to–Octal Decoder . . . . . . . . . . . . . . . . . . . . . MC14511B BCD–to–7–Segment Latch/Decoder/Driver . . . . . . . . . . . . . . . . . . . . . . MC14513B BCD–to–7–Segment Latch/Decoder/Driver with Ripple Blanking . . . .MC14543B BCD–to–7–Segment Latch/Decoder/Driver for Liquid Crystals . . . . . .MC14514B 4–Bit Transparent Latch/4–to–16 Line Decoder (High) . . . . . . . . . . . . .MC14515B 4–Bit Transparent Latch/4–to–16 Line Decoder (Low) . . . . . . . . . . . . .MC14532B 8–Bit Priority Encoder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14555B Dual Binary to 1–of–4 Decoder (Active High Outputs) . . . . . . . . . . . . .MC14556B Dual Binary to 1–of–4 Decoder (Active Low Outputs) . . . . . . . . . . . . . .
Multiplexers/Demultiplexers/Bilateral Switches
MC14016B Quad Analog Switch/Multiplexer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14066B Quad Analog Switch/Multiplexer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14551B Quad 2–Channel Analog Multiplexer/Demultiplexer . . . . . . . . . . . . . . .MC14053B T i l 2 Ch l A l M lti l /D lti l
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 13/449
Device Function
OR Gates
MC14071B Quad 2–Input OR Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Flip–Flops/Latches
MC14042B Quad Transparent Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14043B Quad NOR R–S Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14044B Quad NAND R–S Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14076B Quad D–Type Register with Tri–State Outputs . . . . . . . . . . . . . . . . . . . .MC14175B Quad D Flip–Flop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14013B Dual D Flip–Flop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14027B Dual J–K Flip–Flop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14174B Hex D Flip–Flop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14099B 8–Bit Addressable Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14598B 8–Bit Bus–Compatible Addressable Latch . . . . . . . . . . . . . . . . . . . . . . .
Shift Registers
MC14015B Dual 4–Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14517B Dual 64–Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14562B 128–Bit Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14557B 1–to–64 Bit Variable Length Shift Register . . . . . . . . . . . . . . . . . . . . . . . MC14014B 8–Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14021B 8–Bit Static Shift Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MC14094B 8–Stage Shift/Store Register with Tri–State Outputs . . . . . . . . . . . . . . .MC14549B Successive Approximation Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14559B Successive Approximation Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Counters
MC14017B Decade Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14018B Presettable Divide–by–N Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14020B 14–Bit Binary Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14022B Octal Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14024B 7–Stage Ripple Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14029B Presettable Binary/BCD Up/Down Counter . . . . . . . . . . . . . . . . . . . . . . MC14040B 12–Bit Binary Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14060B 14–Bit Binary Counter and Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14516B Presettable Binary Up/Down Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14518B Dual BCD Up Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14520B Dual Binary Up Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14526B Presettable 4–Bit Binary Down Counter . . . . . . . . . . . . . . . . . . . . . . . . . MC14553B 3–Digit BCD Counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14569B Programmable Dual 4–Bit Binary/BCD Counter . . . . . . . . . . . . . . . . . .
Oscillators/TimersMC14521B 24–Stage Frequency Divider . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14536B Programmable Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC14541B Programmable Oscillator/Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Multivibrators
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 14/449
CH
Reliability Audit
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 15/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 16/449
Reliability Audit Program
For Logic Integrated Circuits
1.0 INTRODUCTIONThe Reliability Audit Program developed in March 1977
is the ON Semiconductor internal reliability audit which isdesigned to assess outgoing product performance underaccelerated stress conditions. Logic Reliability Engineering
has overall responsibility for RAP, including updating itsrequirements, interpreting its results, administration atoffshore locations, and monthly reporting of results. Thesereports are available at all sales offices. Also available is the
“Reliability and Quality Handbook” wall ON Semiconductor devices (HBD
RAP is a system of environmentaperformed periodically on randomly
standard products. Each sample receiin section 2.0. Frequency of testing isdocument 12MRM15301A.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 17/449
Pull 500* piece sample from lot following Group A
acceptance.
2.0 RAP TEST FLOW
#One sample per month for FAST, LS, 10H, 10K, MG CMOS, and HSL CMOS.
* PTHB or PTH not required for hermetic products: reduce total sample size to 450 pcs.
**Seal (Fine & Gross Leak) required only for hermetic products.
***PTH to be used when sockets for PTHB are not available.
PTHB
48 HRS
45* 340
PTH***
48 HRS
INITIAL
SEAL**
TEMP CYCLES
40 CYCLES
SCRAP
INTERIMTEST
ADD 460 CYCLES
INTERIM
TEST
ADD 500 CYCLES
FINALINTERIM*
TEST
TEMP CYCLES#
1000 CYCLES
(ADDITIONAL)
FINALELECTRICAL
& SEAL**
(2000 CYCLES)
FINAL
ELECTRICAL
(96 HRS)
FINAL
ELECTRICAL
(48 HRS)
PTH
48 HRS
(ADDITIONAL)
INTERIM
ELECTRICAL
SCRAP
3.0 TEST CONDITIONS AND COMMENTS
PTHB — 15 psig/121°C/100% RH at rated VCC or VEE —to be performed on plastic encapsulated devicesonly.
3. Sampling to include all package ty
4. Device types sampled will be by gelogic I/C product family (CMOS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 18/449
CH
B and UB Series Fa
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 19/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 20/449
The CMOS Devices in this volume which have a B or UBsuffix meet the minimum values for the industry–
standardized* family specification. These standardizedvalues are shown in the Maximum Ratings and ElectricalCharacteristics Tables. In addition to a standard minimumspecification for characteristics the B/UB devices feature:
• 3–18 volt operational limits• Capable of driving two low–power TTL loads or one
low–power Schottky TTL load over the ratedtemperature range
• Direct Interface to High–Speed CMOS• Maximum input current of ± 1 µA at 15 volt power
supply over the temperature range• Parameters specified at 5.0, 10, and 15 volt supply• Noise margins: B Series
1.0 V min @ 5.0 V supply2.0 V min @ 10 V supply2.5 V min @ 15 V supply
UB Series
0.5 V min @ 5.0 V supply1.0 V min @ 10 V supply1.0 V min @ 15 V supply
The industry–standardized maximum ratings are shown atthe bottom of this page. Limits for the static characteristicsare shown in two formats: Table 1 is in the industry formatand Table 2 is in the equivalent ON Semiconductor format.The ON Semiconductor format is used throughout this databook. Additional specification values are shown on theindividual data sheets.
Switching characteristics for the B and UB series devicesare specified under the following conditions:
Load Capacitance, CL, of 50 pFInput Voltage equal to VSS – VDD (Rail–to–Railswing)Input pulse rise and fall times of 20 nsPropagation Delay times measured from 50% point of
input voltage to 50% point of output voltageThree different supply voltages: 5, 10, and 15 V
Exceptions to the B and UB Series FamilySpecification
There are a number of devices which have a B or UB suffixwhose inputs and/or outputs vary somewhat from the family
Devices with specialized inputs,inputs, have unique input specifi
Input VoltageThe input voltage specification
worstcase input voltage to produce an“0”. This “1” or “0” output level is dfrom the supply (VDD) and ground (Vsupply, this deviation is 0.5 V; for a 1for 15 V, 1.5 V. As an example, in a deV supply, the device with the input
guaranteed to switch on or before 3.5 to 1.5 V. Switching and not switching0.5 V of the ideal output level for thesupply. The actual switching level rebetween 1.5 V and 3.5 V.
Noise MarginThe values for input voltages an
deviations lead to the calculated n
margin is defined as the difference beVout (output deviation). As an exampbuffer at VDD = 5.0 volts: VIL = 1.5volts. Therefore, Noise Margin equalsThis figure is useful while cascading With the input to the first stage at a wo(VIL = 1.5 V), the output is guarantee0.5 volts with a 5.0 volt supply. allowable logic 0 for the second stag
volt output provides a 1.0 volt margistage.
Output Drive CurrentDevices in the B Series are capable
of 0.36 mA over the temperature rangThis value guarantees that these CMone low–power Schottky TTL input.
B Series vs UB CMOS
The primary difference between Bdevices is that UB series gates and invwith a single inverting stage betweendecreased gain caused by using a singnoise immunity and a transfer characte
The decreased gain is quite useful w
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 21/449
MAXIMUM RATINGS* (Voltages Referenced to VSS)
Symbol Parameters Value Unit
VDD DC Supply Voltage – 0.5 to + 18.0 V
Vin, Vout Input or Output Voltage (DC or Transient) – 0.5 to VDD + 0.5 V
Iin, lout Input or Output Current (DC or Transient), per Pin ± 10 mA
PD Power Dissipation, per Package† 500 mW
Tstg Storage Temperature – 65 to + 150 C
TL Lead Temperature (8–Second Soldering) 260 C
* Maximum Ratings are those values values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
Ceramic “L” Packages: – 12 mW/ C From 100 C To 125 C
VIL = 1.5 V Vout = 0.5 V Vout
5.0 V
FIRST STAGE
(NONINVERTING BUFFER)
SECOND STAGE
(NONINVERTING BUFFER)VIL = 1.5 V
Figure 1.
Table 1. EIA/JEDEC Format for CMOS Industry B and UB Series Specifications
ELECTRICAL CHARACTERISTICS
Limits
Tem VDDTLOW* + 25 C
Parameter Range (Vdc) Conditions Min Max Min Max M
IDD Quiescent
Device Current
Mil 5
10
15
Vin = VSS or VDD
0.25
0.5
1.0
0.25
0.5
1.0
GATES Comm 5
10
15
All valid input
combinations
1.0
2.0
4.0
1.0
2.0
4.0
Mil 5
10
15
VIN = VSS or VDD
1.0
2.0
4.0
1.0
2.0
4.0
BUFFERS,
FLIP–FLOPS
Comm 5
1015
All valid input
combinations
4
816
4.0
8.016.0
Mil 5
10
15
VIN = VSS or VDD
5
10
20
5
10
20
MSI Comm 5
10
All valid input
combinations
20
40
20
40
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 22/449
Table 1. EIA/JEDEC Format for CMOS Industry B and UB Series Specifications (con
ELECTRICAL CHARACTERISTICS
Limits
ConditionsVDD(Vdc)TempRangeParameter
+ 25 CTLOW*
ConditionsVDD(Vdc)TempRangeParameter MMaxMinMaxMinConditionsVDD(Vdc)TempRangeParameter
VIL Input
Low Voltage#
B Types
All 5
10
15
VO = 0.5V or 4.5V
VO = 1.0V or 9.0V
VO = 1.5V or 13.5V
|IO| < 1 µA
1.5
3.0
4.0
1.5
3.0
4.0
VIL Input
Low Voltage#
UB Types
All 5
10
15
VO = 0.5V or 4.5V
VO = 1.0V or 9.0V
VO = 1.5V or 13.5V
|IO| < 1 µA
1.0
2.0
2.5
1.0
2.0
2.5
VIH InputHigh Voltage#
B Types
All 510
15
VO = 0.5V or 4.5VVO = 1.0V or 9.0V
VO = 1.5V or 13.5V
|IO| < 1 µA
3.57.0
11.0
3.57.0
11.0
37
1
VIH Input
High Voltage#
UB Types
All 5
10
15
VO = 0.5V or 4.5V
VO = 1.0V or 9.0V
VO = 1.5V or 13.5V
|IO| < 1 µA
4.0
8.0
12.5
4.0
8.0
12.5
4
8
12
IOL Output Low
(Sink) CurrentMil 5
10
15
VO = 0.4V,
VIN = 0 or 5V
VO = 0.5V,VIN = 0 or 10V
VO = 1.5V,
VIN = 0 or 15V
0.64
1.6
4.2
0.51
1.3
3.4
0.
0
2
Com 5
10
15
VO = 0.4V,
VIN = 0 or 5V
VO = 0.5V,
VIN = 0 or 10V
VO = 1.5V,
VIN = 0 or 15V
0.52
1.3
3.6
0.44
1.1
3.0
0.
0
2
IOH Output High(Source) Current
Mil5
10
15
VO = 4.6V,VIN = 0 or 5V
VO = 9.5V,
VIN = 0 or 10V
VO = 13.5V,
VIN = 0 or 15V
– 0.25
– 0.62
– 1.8
– 0.2
– 0.5
– 1.5
– 0
– 0
–
Com
5
10
15
VO = 4.6V,
VIN = 0 or 5V
VO = 9.5V,
VIN = 0 or 10V
VO = 13.5VVIN = 0 or 15V
– 0.2
– 0.5
– 1.4
– 0.16
– 0.4
– 1.2
– 0
–
–
IIN Input Current Mil
Comm
15
15
VIN = 0 or 15V
VIN = 0 or 15V
± 0.1
± 0.3
± 0.1
± 0.3
Ioz 3–State Output
Leakage Current
Mil
Comm
15
15
VIN = 0 or 15V
VIN = 0 or 15V
± 0.4
± 1.6
± 0.4
± 1.6
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 23/449
Table 2. ON Semiconductor Format for CMOS Industry B and UB Series Specificat
ELECTRICAL CHARACTERISTICS
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Max M
Output Voltage “0” LevelVin = VDD or 0
VOL 5.010
15
— —
—
0.050.05
0.05
— —
—
0.050.05
0.05
— —
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
—
—
—
4.
9.
14
Input Voltage B Types “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
1.5
3.0
4.0
—
—
—
“1” Level(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
—
—
—
3
7
1
Input Voltage UB Types “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.0
2.0
2.5
—
—
—
1.0
2.0
2.5
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)(VO = 1.5 or 13.5 Vdc)
VIH
5.0
1015
4.0
8.012.5
—
— —
4.0
8.012.5
—
— —
4
812
Output Drive Current B Gates
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
—
—
—
0.
0
2
Output Drive Current UB Gates(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH5.0
5.0
10
15
– 1.2
– 0.25
– 0.62
– 1.8
—
—
—
—
– 1.0
– 0.2
– 0.5
– 1.5
—
—
—
—
– 0
– 0
– 0
–
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
—
—
—
0.
0
2
Output Drive Current Other Devices
(VOH = 4.6 Vdc) Source
(VOH = 9.5 Vdc)(VOH = 13.5 Vdc)
IOH
5.0
1015
– 0.64
– 1.6 – 4.2
—
— —
– 0.51
– 1.3 – 3.4
—
— —
– 0
– 0 – 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ± 0.1 —
Input Capacitance (Vin = 0) Cin — — — — 7.5 —
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 24/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 25/449
HANDLING PRECAUTIONS
All MOS devices have insulated gates that are subject tovoltage breakdown. The gate oxide for ON SemiconductorCMOS devices is about 900 Å thick and breaks down at agate–source potential of about 100 volts. To guard againstsuch a breakdown from static discharge or other voltagetransients, the protection networks shown in Figures 1A and1B are used on each input to the CMOS device.
Static damaged devices behave in various ways,depending on the severity of the damage. The most severelydamaged inputs are the easiest to detect because the inputhas been completely destroyed and is either shorted to VDD,shorted to VSS, or open–circuited. The effect is that thedevice no longer responds to signals present at the damagedinput. Less severe cases are more difficult to detect becausethey show up as intermittent failures or as degradedperformance. Another effect of static damage is that theinputs generally have increased leakage currents.
Although the input protection network does provide agreat deal of protection, CMOS devices are not immune tolarge static voltage discharges that can be generated duringhandling. For example, static voltages generated by a personwalking across a waxed floor have been measured in the4–15 kV range (depending on humidity, surface conditions,etc.). Therefore, the following precautions should beobserved:
1. Do not exceed the Maximum Ratings specified by thedata sheet.
2. All unused device inputs should be connected to VDDor VSS.
3. All low–impedance equipment (pulse generators,etc.) should be connected to CMOS inputs only afterthe device is powered up. Similarly, this type of equipment should be disconnected before power isturned off.
4. Circuit boards containing CMOS devices are merelyextensions of the devices, and the same handlingprecautions apply. Contacting edge connectors wireddirectly to device inputs can cause damage. Plasticwrapping should be avoided. When externalconnections to a PC board are connected to an input of
a CMOS device, a resistor showith the input. This resistor h
damage if the PC board is remcontact with static generating mfactor for the series resistor is thcaused by the time constant resistor and input capacitance. Ninput rise and fall times shoulFigure 2, two possible networseries resistor to reduce Discharge) damage. For conven
added propagation delay and riseries resistance size is given.
5. All CMOS devices should be smaterials that are antistatic. CMbe inserted into conventiostyrofoam, or plastic trays, butoriginal container until ready f
6. All CMOS devices should be bench surface and operat
themselves prior to handling decan be statically charged withsurface. Wrist straps in contactrecommended. See Figure 3 typical work station.
7. Nylon or other static generatincome in contact with CMOS de
8. If automatic handlers are beinstatic electricity may be genera
of the device, the belts, or the build–up by using ionized ahumidifiers. All parts of machcontact with the top, bottom, omust be grounded to metal material.
9. Cold chambers using CO2 foequipped with baffles, and the Ccontained on or in conductive m
10. When lead–straightening ornecessary, provide ground strused and be sure that soldering
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 26/449
INPUT PROTECTION NETWORK
Figure 1a. Input Protection Network
Double Diode
Figure 1b. Input Prot
Triple Dio
VDD VDD
CMOS
INPUTTO CIRCUIT
<1500 Ω
VSS
CMOS
INPUT300 Ω
11. The following steps should be observed during wavesolder operations:a. The solder pot and conductive conveyor system of
the wave soldering machine must be grounded toan earth ground.
b. The loading and unloading work benches should
have conductive tops which are grounded to anearth ground.
c. Operators must comply with precautionspreviously explained.
d. Completed assemblies should be placed inantistatic containers prior to being moved tosubsequent stations.
12. The following steps should be observed duringboard–cleaning operations:
a. Vapor degreasers and baskets must be grounded toan earth ground.
b. Brush or spray cleaning should not be used.c. Assemblies should be placed into the vapor
degreaser immediately upon removal from theantistatic container.
d. Cleaned assemblies should be placed in antistaticcontainers immediately after removal from thecleaning basket.
e. High velocity air movement or application of solvents and coatings should be employed onlywhen assembled printed circuit boards aregrounded and a static eliminator is directed at theboard.
13. The use of static detection metsurveillance is highly recomme
14. Equipment specifications shopresence of CMOS devfamiliarization with this spperforming any kind of mainte
of devices or modules.15. Do not insert or remove CMO
sockets with power applied. Chto be used for testing devices tovoltage transients present.
16. Double check test equipment seof VDD and VSS before condfunctional testing.
17. Do not recycle shipping rails o
causes deterioration of their an
RECOMMENDED FOR READING
“Total Control of the Static in You
Available by writing to:3M Company
Static Control SystemsP.O. Box 2963Austin, Texas 78769–2963
Or by Calling:1–800–328–1368
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 27/449
Figure 2. Networks for Minimizing ESD and Reducing
CMOS Latch Up Susceptibility
TO OFF–BOARD
CONNECTION
R1CMOS
INPUT
OR
OUTPUT
TO OFF–BOARD
CONNECTION
R2
Advantage:
Disadvantage:
Requires minimal board area
R1 > R2 for the same level of
protection, therefore rise and fall
times, propagation delays, and output
drives are severely affected.
Advantage:
Disadvantage:
R2 < R1 for the same
level of protection.
Impact on ac and dc
characteristics is minimize
More board area, higher i
Note: These networks are useful for protecting the following
A
B
digital inputs and outputs
analog inputs and outputs
C
D
3–state outputs
bidirectional (I/O) ports
PROPAGATION DELAY AND RISE TIME
vs. SERIES RESISTANCE
Rt
C kwhere:
R
t
C
k
k
= the maximum allowable series resistance in ohms
= the maximum tolerable propagation delay or rise time in seconds
= the board capacitance plus the driven device’s
= input capacitance in farads= 0.7 for propagation delay calculations
= 2.3 for rise time calculations
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 28/449
Figure 3. Typical Manufacturing Work Station
RESISTOR =1 MEGAOHM
1
2
3
4
5
NOTES: 1. 1/16 inch conductive sheet
top work area.
2. Ground strap.
3. Wrist strap in contact with s
4. Static neutralizer. (Ionized
work.) Primarily for use in
grounding is impractical.
5. Room humidifier. Primarily
the relative humidity is les
building heating and coolin
the air causing the relativ
buildings to be less than ou
POWER SUPPLIES
CMOS devices have low power requirements and theability to operate over a wide range of supply voltages.These two characteristics allow CMOS designs to beimplemented using inexpensive, conventional powersupplies, instead of switching power supplies and powersupplies with cooling fans. In addition, batteries may be usedas either a primary power source or for emergency backup.
The absolute maximum power supply voltage for 14000Series Metal–gate CMOS is 18.0 Vdc. Figure 4 offers someinsight as to how this specification was derived. In thefigure, VS is the maximum power supply voltage and IS isthe sustaining current of the latch–up mode. The value of VS
was chosen so that the secondary breakdown effect may beavoided.
In an ideal system design, a power supply should bedesigned to deliver only enough current to insure properoperation of all devices. The obvious benefit of this typedesign is cost savings; an added benefit is protection against
the possibility of latch–up related protection can be provided by the powvoltage regulator.
CMOS devices can be used with bat
systems. A few precautions should bebattery–operated systems:1. The recommended power supp
observed. For battery backup syin Figure 5, the battery voltagVolts (3 Volts from the minvoltage and 0.7 Volts to accouacross the series diode).
2. Inputs that might go above the b
should either use a series resicurrent to less than 10 mA or usMC14050B high–to–low volta
3. Outputs that are subject to voltor below VSS should be protecteto limit the current to less tclamping diodes.
IDD
LATCH
UP MODE
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 29/449
Figure 5. Battery Backup Interface
POWER SUPPLY
LINE POWER ONLY
SYSTEM
CMOS
SYSTEM
MC14049UB
MC14050B
BATTERY BACKUP
SYSTEM
MC14049UB
MC14050B
BATT
R
CMOS
SYSTEM
INPUTS
All inputs, while in the recommended operating range(VSS < Vin < VDD) can be modeled as shown in Figure 6. Forinput voltages in this range, diodes D1 and D2 are modeledas resistors, representing the reverse bias impedance of the
diodes. The maximum input current is worst case, 1 µA,when the inputs are at VDD or VSS, and VDD = 15.0 V. Thismodel does not apply to inputs with pull–up or pull–downresistors.
Figure 6. Input Model for VSS Vin VDD
VDD
R1
7.5 pF
R1 = R2 = HIGH Z
R2
When left open–circuited, the inputs may self–bias at ornear the typical switchpoint, where both the P–channel andN–channel transistors are conducting, causing excessivecurrent drain Due to the high gain of the inverters (see
Figure 7. Typical Transfer C
for Buffered Devic
5.0
4.0
3.0
2.0
1.0
00 1.0 2.0 3.0 4.0
Vin, INPUT VOLTAG
V o u t ,
O U T P U T V O
L T A G E ( V )
VDD = 5.0 Vd
SINGLE INPUT N
MULTIPLE INPUT
SINGLE INP
MULTIPLE
For these reasons, all unused inputeither to VDD or VSS. For applicationedge connectors, a 100 kilohm resisused, as well as a series resistor forcurrent limiting (Figure 8). The 100 ki
eliminate any static charges that mprinted circuit board. See Figure protection arrangements.
RSFROM
EDGE
CONNECTOR
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 30/449
For input voltages outside of the recommended operatingrange, the CMOS input is modeled as in Figure 9. Theresistor–diode protection network allows the user greaterfreedom when designing a worst case system. The deviceinputs are guaranteed to withstand voltages from VSS – 0.5
V to VDD + 0.5 V and a maximum current of 10 mA. Withthe above input ratings, most designs will require no specialterminations or design considerations.
Figure 9. Input Model for Vin > VDD or Vin < VSS
1.5 k
D2 7.5 pF
D1
Other specifications that should be noted are themaximum input rise and fall times. Figure 10 shows the
oscillations that may result from exceeding the 15 µsmaximum rise and fall time at VDD = 5.0 V, 5 µs at 10 V, or4 µs at 15 V. As the voltage passes through the switchingthreshold region with a slow rise time, any noise that is onthe input is amplified, and passed through to the output,causing oscillations. The oscillation may have a low enoughfrequency to cause succeeding stages to switch, givingunexpected results. If input rise or fall times are expected toexceed 15 µs at 5.0 V, 5 µs at 10 V, or 4 µs at 15 V,
Schmitt–trigger devices such as the MC14093B,MC14584B, MC14106B, HC14, or HC132 arerecommended for squaring–up these slow transitions.
Vin
Vout
VDD
VSS
VOH
VOL
lout = 0µA. The output drives for all buare such that 1 LSTTL load can be temperature range.
CMOS outputs are limited to extvoltages of VSS – 0.5 V Vout
voltages are forced outside of this rangrectifier (SCR) formed by parasititriggered, causing the device to information on this, see the explanatioin this section.
The maximum rated output curren10 mA. The output short–circuit curtypically exceed these limits. Care exceed the maximum ratings found o
For applications that require drivingwhere fast propagation delays are power MOSFETs), two or more outpmay be externally paralleled.
CMOS LATCH UP
Latch up will not be a problem fordesigner should be aware of it, what prevent it.
Figure 11 shows the cross–sectioinverter and Figure 12 shows the parThe circuit formed by the parasitic tris the basic configuration of a silicon SCR. In the latch up condition, transturned ON, each providing the base cuother to remain in saturation, thereby the ON state. Unlike a conventional Sis turned ON by applying a voltage ttransistor, the parasitic SCR is turnvoltage to the emitter of either transithat trigger the SCR are the same poiTherefore, to latch up the CMOS devmust be greater than VDD + 0.5 V orand have sufficient current to trigger tmechanism is similar for the inputs.
Once a CMOS device is latched upis not limited, the device will be destrsuch occurrences are listed below:
1. Insure that inputs and outpumaximum rated values, as follo–0.5 V ≤ Vin or Vout VDD +VSS) |Iin or Iout| 10 mA (unleon the data sheet)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 31/449
series resistors may be used in plug–in boardapplications).
4. Voltage regulating or filtering should be used in boarddesign and layout to insure that power–supply linesare free of excessive noise.
5. Limit the available power sdevices that are subject to latccan be accomplished with the pnetwork or with a current–limi
Figure 11. CMOS Wafer Cross Section
VDD VDD
P–CHANNEL N–CHANNEL
INPUT
OUTPUTP–CHANNEL
OUTPUT
N–CHANNEL
OUTPUT
VSS
FIELD OXIDE FIELD OXIDE FIELN+ P+ P+ N+ N+ P+
P – WELLN – SUBSTRATE
Figure 12. Latch Up Circuit Schematic
VSS
VSS
N–CHANNEL OUTPUTN–SUBSTRATE RESISTAN
Q1
N+
P–
P–CHANP–WELL RESISTANCE
N–
P+
P–
N+ N–
P+Q2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 32/449
CH
CMOS Logic Da
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 33/449
MC14001B, MC14011B, MC14023B,MC14025B, MC14071B, MC14073B,MC14081B, MC14082B
The B Series logic gates are constructed with P and N channelenhancement mode devices in a single monolithic structure(Complementary MOS). Their primary use is where low power
dissipation and/or high noise immunity is desired.• Supply Voltage Range = 3.0 Vdc to 18 Vdc• All Outputs Buffered• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range.• Double Diode Protection on All Inputs Except: Triple Diode
Protection on MC14011B and MC14081B• Pin–for–Pin Replacements for Corresponding CD4000 Series B
Suffix Devices
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
1. Maximum Ratings are those values beyond which damage to the device
may occur.2. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
http://onsem
Device D
DEVICE INFO
MC14001B Quad 2–In
MC14011B Quad 2–In
MC14023B Triple 3–In
MC14025B Triple 3 In
PDIP–14
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 75
TSSOP–
DT SUFF
CASE 948
XX = Specific
A = Assemb
WL or L = Wafer L
YY or Y = Year
WW or W = Work W
SOEIAJ–
F SUFFI
CASE 96
MC14001B Series
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 34/449
LOGIC DIAGRAMS
1
2
5
6
8
9
1213
3
4
10
11
1
2
5
6
8
9
1213
3
4
10
11
1
2
5
6
8
9
1213
3
4
10
11
1
2
5
6
8
9
1213
2 I N P U T
12 9
3 I N P U T
8
34 65
1112 1013
12 98
34 65
1112 1013
12 98
34 65
1112 1013
345
2
101112
9
VDD = PIN 14
VSS = PIN 7
FOR ALL DEVICES
NOR
MC14001B
Quad 2–Input NOR Gate
MC14025B
Triple 3–Input NOR Gate
MC14023B
Triple 3–Input NAND Gate
NAND
MC14011B
Quad 2–Input NAND Gate
OR
MC14071B
Quad 2–Input OR Gate Quad
MC14073B
Triple 3–Input AND Gate Dua
PIN ASSIGNMENTS
11
12
13
14
8
9
105
4
3
2
1
7
6
OUTC
OUTD
IN 1D
IN 2D
VDD
IN 1C
IN 2C
OUTB
OUTA
IN 2A
IN 1A
VSS
IN 2B
IN 1B
11
12
13
14
8
9
105
4
3
2
1
7
6
OUTC
OUTD
IN 1D
IN 2D
VDD
IN 1C
IN 2C
OUTB
OUTA
IN 2A
IN 1A
VSS
IN 2B
IN 1B
11
12
13
14
8
9
105
4
3
2
1
7
6
OUTC
IN 1C
IN 2C
IN 3C
VDD
IN 3A
OUTA
IN 2B
IN 1B
IN 2A
IN 1A
VSS
OUTB
IN 3B
IN 2B
IN 1B
IN 2A
IN 1A
VSS
OUTB
IN 3B
141 VIN 1 141 VIN 1 141 VIN 1 OUT
MC14023BTriple 3–Input NAND GateMC14001BQuad 2–Input NOR Gate MC14011BQuad 2–Input NAND Gate
Dual 4
MC14081B
Quad 2–Input AND Gate
Triple
MC14071B
Quad 2–Input OR GateMC14073B
Triple 3–Input AND Gate
MC14001B Series
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 35/449
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
1015
—
— —
0.05
0.050.05
—
— —
0
00
0.05
0.050.05
—
— —
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
–
–
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)(VOL = 1.5 Vdc)
IOL 5.0
1015
0.64
1.64.2
—
— —
0.51
1.33.4
0.88
2.258.8
—
— —
0.
02
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
—
—
—
Total Supply Current (4.) (5.)
(Dynamic plus Quiescent,
Per Gate, CL = 50 pF)
IT
5.0
10
15
IT
= (0.3 µA/kHz) f + IDD
/N
IT = (0.6 µA/kHz) f + IDD /N
IT = (0.9 µA/kHz) f + IDD /N
3. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe4. The formulas given are for the typical characteristics only at 25 C.5. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001 x the nu
per package.
MC14001B Series
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 36/449
B–SERIES GATE SWITCHING TIMES
SWITCHING CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (7.)
Output Rise Time, All B–Series Gates
tTLH = (1.35 ns/pF) CL + 33 ns
tTLH = (0.60 ns/pF) CL + 20 ns
tTLH = (0.40 ns/PF) CL + 20 ns
tTLH
5.0
10
15
—
—
—
100
50
40
Output Fall Time, All B–Series Gates
tTHL = (1.35 ns/pF) CL + 33 ns
tTHL = (0.60 ns/pF) CL + 20 ns
tTHL = (0.40 ns/pF) CL + 20 ns
tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
MC14001B, MC14011B only
tPLH, tPHL = (0.90 ns/pF) CL + 80 ns
tPLH, tPHL = (0.36 ns/pF) CL + 32 ns
tPLH, tPHL = (0.26 ns/pF) CL + 27 ns
All Other 2, 3, and 4 Input Gates
tPLH, tPHL = (0.90 ns/pF) CL + 115 ns
tPLH, tPHL = (0.36 ns/pF) CL + 47 ns
tPLH, tPHL = (0.26 ns/pF) CL + 37 ns
8–Input Gates (MC14068B, MC14078B)
tPLH, tPHL = (0.90 ns/pF) CL + 155 ns
tPLH
, tPHL
= (0.36 ns/pF) CL
+ 62 ns
tPLH, tPHL = (0.26 ns/pF) CL + 47 ns
tPLH, tPHL
5.0
10
15
5.0
10
15
5.0
10
15
—
—
—
—
—
—
—
—
—
125
50
40
160
65
50
200
80
60
6. The formulas given are for the typical characteristics only at 25 C.7. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
VDD14
CL
VSS7
PULSEGENERATOR
INPUT
OUTPUT
90%50%
10%
10%50%
90%
20 ns 2
tPHL
tTHL
INPUT
OUTPUT
INVERTING
*All unused inputs of AND, NAND gates must be connected to VDD.
All unused inputs of OR, NOR gates must be connected to VSS.
90%50%10%
OUTPUT
NON–INVERTING
tTLH
tPLH
*
Figure 1. Switching Time Test Circuit and Waveforms
MC14001B Series
CIRCUIT SCHEMATIC
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 37/449
CIRCUIT SCHEMATICNOR, OR GATES
14
*
7VSS
3, 4, 10, 11
VDD
VSS
VDD
*Inverter omitted in MC14001B
1, 6, 8, 13
2, 5, 9, 12
1, 3, 11
2, 4, 12
VSS
VDD
VSS
VDD
8, 5, 13
MC14001B, MC14071B
One of Four Gates Shown
MC14025B
One of Three Gates
*Inverter omitted
CIRCUIT SCHEMATICNAND, AND GATES
*
*Inverter omitted in
14
*
9, 6, 10
VDD2, 5, 9, 12
1, 6, 8, 13
2, 4, 12
1, 3, 11
VDD
VDD
VSS
8, 5, 13
MC14011B, MC14
One of Four Gates
MC14023B, MC14073B
One of Three Gates Shown
MC14001B Series
TYPICAL B SERIES GATE CHARACTERISTICS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 38/449
TYPICAL B–SERIES GATE CHARACTERISTICS
N–CHANNEL DRAIN CURRENT (SINK) P–CHANNEL DRAIN CURR
Figure 2. VGS = 5.0 Vdc Figure 3. VGS = –
1.0
3.0
5.0
4.0
2.0
01.0 3.0 5.04.02.00
VDS, DRAIN–TO–SOURCE VOLTAGE (Vdc)
– 1.0
00
TA = – 55°C
Figure 4. VGS = 10 Vdc Figure 5. VGS = –
16
14
12
10
8.0
6.0
4.0
2.0
05.03.01.0 108.06.04.02.00
00
– 40°C
+ 25°C+ 85°C
+ 125°C
– 1.0 – 3 – 2.0
VDS, DRAIN–TO–SOURCE V
TA
= – 55°C
– 40°C
+ 25°C+ 85°C
+ 125°C
VDS, DRAIN–TO–SOURCE VOLTAGE (Vdc) VDS, DRAIN–TO–SOURCE V
18
20
9.07.0 – 5.0 – 3.0 – 1.0 – 6 – 4.0 – 2.0
– 40
– 35
– 30
– 25
– 20
– 15
– 10
– 5.0
– 45
– 50
TA = – 55°C
– 40°C
+ 25°C+ 85°C
– 80 – 70
– 60
– 50
– 40
– 90
– 100
4035
30
25
20
45
50
TA
– 2.0
– 3.0
– 4.0
– 5.0
– 6.0
– 7.0
– 8.0
– 9.0
– 10
I ,
D
D R A I N C U R R E N T ( m A )
I ,
D
D R A I N C U R R E N T ( m A )
I ,
D
D R A I N C U R R E N T ( m A )
I ,
D
D R A I N C U R R E N T ( m A )
A I N C U R R E N T ( m A )
A I N C U R R E N T ( m A )
+ 125°C
MC14001B Series
TYPICAL B SERIES GATE CHARACTERISTICS (cont’d)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 39/449
TYPICAL B–SERIES GATE CHARACTERISTICS (cont d)
VOLTAGE TRANSFER CHARACTERISTICS
Figure 8. VDD = 5.0 Vdc Figure 9. VDD =
1.0
3.0
5.0
4.0
2.0
01.0 3.0 5.04.02.00
00
Vin, INPUT VOLTAGE (Vdc)
SINGLE INPUT NAND, AND
MULTIPLE INPUT NOR, OR
SINGLE INPUT NOR, OR
MULTIPLE INPUT NAND, AND
SINGLE INP
MULTIPLE I
SINGLE
MULTIPL
2.0
6.0
10
8.0
4.0
2.0 6.0 8.04.0
Vin, INPUT VOLTAG
V
,
o u t
O U T P U T V O L T A G E ( V d c )
V
,
o u t
O U T P U T V O L T A G E ( V d c )
Figure 10. VDD = 15 Vdc
00
SINGLE INPUT NAND, AND
MULTIPLE INPUT NOR, OR
SINGLE INPUT NOR, OR
MULTIPLE INPUT NAND, AND
2.0
6.0
10
8.0
4.0
2.0 6.0 108.04.0
Vin, INPUT VOLTAGE (Vdc)
12
14
16
V
,
o u t
O U T P U T V O L T A G E ( V d
c )
DC NOISE MARG
The DC noise margin is defined as t
from an ideal “1” or “0” input level woutput state change(s). The typical values of the input values VIL and Vbe at a fixed voltage VO are givCharacteristics table. VIL and VIH arein Figure 11.
Guaranteed minimum noise margin“0” levels =
1.0 V with a 5.0 V supply
2.0 V with a 10.0 V supply
2.5 V with a 15.0 V supply
Vout
VO
VO
VDD
VDD Vout
VO
VO
VDD
VDD
MC14001B Series
ORDERING & SHIPPING INFORMATION: ORDERING & SHIPPING INFORMA
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 40/449
ORDERING & SHIPPING INFORMATION:
Device Package Shipping
MC14001BCP PDIP–14 2000 Units per Box
MC14001BD SOIC–14 2750 Units per Box
MC14001BDR2 SOIC–14 2500 Units / Tape & Reel
MC14001BDT TSSOP–14 96 Units per Rail
MC14001BDTR2 TSSOP–14 96 Units per Rail
MC14011BCP PDIP–14 2000 Units per Box
MC14011BD SOIC–14 2750 Units per Box
MC14011BDR2 SOIC–14 2500 Units / Tape & Reel
MC14011BDT TSSOP–14 96 Units per Rail
MC14011BDTEL TSSOP–14 2000 Units / Tape & Reel
MC14011BDTR2 TSSOP–14 50 Units per Rail
MC14023BCP PDIP–14 2000 Units per Box
MC14023BD SOIC–14 2750 Units per Box
MC14023BDR2 SOIC–14 2500 Units / Tape & Reel
MC14025BCP PDIP–14 2000 Units per Box
MC14025BD SOIC–14 2750 Units per Box
MC14025BDR2 SOIC–14 2500 Units / Tape & Reel
ORDERING & SHIPPING INFORMA
Device Package
MC14071BCP PDIP–14
MC14071BD SOIC–14
MC14071BDR2 SOIC–14 250
MC14071BDT TSSOP–14
MC14071BDTR2 TSSOP–14
MC14073BCP PDIP–14
MC14073BD SOIC–14
MC14073BDR2 SOIC–14 250
MC14081BCP PDIP–14
MC14081BD SOIC–14
MC14081BDR2 SOIC–14 250
MC14081BDT TSSOP–14
MC14081BDTR2 TSSOP–14 250
MC14082BCP PDIP–14
MC14082BD SOIC–14
MC14082BDR2 SOIC–14 250
For ordering information on the EIAJ versages, please contact your local ON Semitive.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 41/449
The UB Series logic gates are constructed with P and N channelenhancement mode devices in a single monolithic structure(Complementary MOS). Their primary use is where low powerdissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non–buffered functions.
• Supply Voltage Range = 3.0 Vdc to 18 Vdc•
Linear and Oscillator Applications• Capable of Driving Two Low–power TTL Loads or One Low–powerSchottky TTL Load Over the Rated Temperature Range
• Double Diode Protection on All Inputs• Pin–for–Pin Replacements for Corresponding CD4000 Series UB
Suffix Devices
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD
Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
1. Maximum Ratings are those values beyond which damage to the devicemay occur.
2. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e g
http://onsem
PDIP–14P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 75
XX = Specific
A = Assemb
WL or L = Wafer L
YY or Y = Year
WW or W = Work W
Device Packag
ORDERING INF
MC14001UBCP PDIP–1
MC14001UBD SOIC–1
MC1400
Quad 2–InputMC1401
Quad 2–Input
MC14001UB, MC14011UB
LOGIC DIAGRAMS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 42/449
MC14001UB
Quad 2–Input
NOR Gate
MC14011UB
Quad 2–Input
NAND Gate
VDD = PIN 14VSS = PIN 7
FOR ALL DEVICES
13
12
9
8
6
5
21 3
4
10
1113
129
86
521 3
4
10
11
PIN ASSIGNMENTS
11
12
13
14
8
9
105
4
3
2
1
7
6
OUTC
OUTD
IN 1D
IN 2D
VDD
IN 1C
IN 2C
OUTB
OUTA
IN 2A
IN 1A
VSS
IN 2B
IN 1B
11
12
13
14
8
9
105
4
3
2
1
7
6
OUTC
OUTD
IN 1D
IN 2D
VDD
IN 1C
IN 2C
OUTB
OUTA
IN 2A
IN 1A
VSS
IN 2B
IN 1B
MC14001UBQuad 2–Input NOR Gate
MC14011UBQuad 2–Input NAND Gate
MC14001UB, MC14011UB
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 43/449
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” Level
Vin
= VDD
or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 or VDD “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4
9
14
Input Voltage “0” Level
(VO = 4.5 Vdc)
(VO = 9.0 Vdc)
(VO = 13.5 Vdc)
VIL
5.0
10
15
—
—
—
1.0
2.0
2.5
—
—
—
2.25
4.50
6.75
1.0
2.0
2.5
—
—
—
(VO
= 0.5 Vdc) “1” Level
(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
IIH
5.0
10
15
4.0
8.0
12.5
—
—
—
4.0
8.0
12.5
2.75
5.50
8.25
—
—
—
4
8
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 1.2
– 0.25
– 0.62
– 1.8
—
—
—
—
– 1.0
– 0.2
– 0.5
– 1.5
– 1.7
– 0.36
– 0.9
– 3.5
—
—
—
—
–
– 0
– 0
–
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0
0
2
Input Current Iin 15 — ± 0.1 — ± 0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
—
—
—
Total Supply Current (4.) (5.)
(Dynamic plus Quiescent,
Per Gate CL = 50 pF)
IT 5.0
10
15
IT = (0.3 µA/kHz) f + IDD /N
IT = (0.6 µA/kHz) f + IDD /N
IT = (0.8 µA/kHz) f + IDD /N
3. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe4. The formulas given are for the typical characteristics only at 25 C.5. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µH (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001 x the nu
per package.
MC14001UB, MC14011UB
SWITCHING CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 44/449
Characteristic Symbol
VDD
Vdc Min Typ (7.)
Output Rise Time
tTLH = (3.0 ns/pF) CL + 30 ns
tTLH = (1.5 ns/pF) CL + 15 nstTLH = (1.1 ns/pF) CL + 10 ns
tTLH
5.0
1015
—
— —
180
9065
Output Fall Time
tTHL = (1.5 ns/pF) CL + 25 ns
tTHL = (0.75 ns/pF) CL + 12.5 ns
tTHL = (0.55 ns/pF) CL + 9.5 ns
tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
tPLH, tPHL = (1.7 ns/pF) CL + 30 ns
tPLH, tPHL = (0.66 ns/pF) CL + 22 ns
tPLH, tPHL = (0.50 ns/pF) CL + 15 ns
tPLH, tPHL
5.0
10
15
—
—
—
90
50
40
6. The formulas given are for the typical characteristics only at 25 C.7. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
Figure 1. Switching Time Test Circuit and Waveforms
VDD
14
VSS
OUTPUT
CL
INPUT
*
7
PULSEGENERATOR
20 ns
INPUT
OUTPUT
INVERTING
tPHL
90%50%
10%
90%50%
10%
tTHL*All unused inputs of AND, NAND gates must be
connected to VDD.
All unused inputs of OR, NOR gates must be
connected to VSS.
MC14001UB, MC14011UB
MC14001UB CIRCUIT SCHEMATIC MC14011UB CIRCUIT
(1/4 of Device S
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 45/449
14 103
VDD
6
5
2
1
VSS
4 7 11
12
13
9
8
(1/4 of Device S
2, 5, 9, 12
1, 6, 8, 13
7 V
14 V
Figure 2. Typical Voltage and
Current Transfer Characteristics
Figure 3. Typical Voltage Transfe
Characteristics versus
Temperature
V o u t ,
O U T P U T V O L T A
G E ( V d c )
16
14
12
10
8.0
6.0
4.0
2.0
00 2.0 4.0 6.0 8.0 10 12 14 16
8.0
6.0
4.0
2.0
0
I D ,
D R A I N C U R R E N T
( m A d c )
Vin, INPUT VOLTAGE (Vdc)
V o u t ,
O U T P U T V O L T A
G E ( V d c )
16
14
12
10
8.0
6.0
4.0
2.0
00 2.0 4.0 6.0 8.0 10 12 14 16
Vin, INPUT VOLTAGE (Vdc)
A I N C U R R E N T ( m A d c
)
– 6.0
– 4.0
– 2.0
0
A I N C U R R E N T ( m A d c
)
4.0
6.0
8.0
10
TA = –55°C
TA = +25°C
TA = +125°C
a
b
c
VGS = –5.0 Vdcb
c
a
c
a
b
c a
b
c
VGS = 1
15 Vdc
VDD = 15 Vdc
TA = +125°CTA = –55°Cab
a
b
TA = +25°C
Unused input
connected to
VSS.
One input only
Both inputs10 Vdc
5.0 Vdc
b a
b a
b a
15 Vdc
10 Vdc
Unused input
connected to
VSS.
VDD = 15 Vdc
ba
a b
a b
5.0 Vdc
10 Vdc
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 46/449
The MC14007UB multi–purpose device consists of threeN–channel and three P–channel enhancement mode devices packagedto provide access to each device. These versatile parts are useful ininverter circuits, pulse–shapers, linear amplifiers, high inputimpedance amplifiers, threshold detectors, transmission gating, andfunctional gating.
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Pin–for–Pin Replacement for CD4007A or CD4007UB• This device has 2 outputs without ESD Protection. Anti–static
precautions must be taken.
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
t th V (V V ) V
http://onsem
A = Assemb
WL or L = Wafer L
YY or Y = Year
WW or W = Work W
Device Packag
ORDERING INF
MC14007UBCP PDIP–
MC14007UBD SOIC–
MC14007UBDR2 SOIC–
PDIP–14
P SUFFIX
CASE 64
SOIC–14
D SUFFIX
CASE 751
TSSOP–1
DT SUFF
CASE 948
SOEIAJ–1
F SUFFIX
CASE 96
MC14007UB
PIN ASSIGNMENT
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 47/449
A
B
C
INPUT
INPUT
A
B
C
12
1
3
5
9
2
4
11
10
14
VDD
6 8
13INPUT OUTPUT CONDITION
11
12
13
14
8
9
105
4
3
2
1
7
6
GATEC
S–PC
OUTC
D–PA
VDD
D–NA
S–NC
S–NB
GATEB
S–PB
D–PB
VSS
GATEA
D–NB
D = DRAIN
S = SOURCE
SCHEMATIC
14 13 2 1 11
126
7 8 3 4 5 10 9
VDD = PIN 14
VSS = PIN 7
MC14007UB
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
55 C 25 C
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 48/449
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 or VDD “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 Vdc)
(VO = 9.0 Vdc)
(VO = 13.5 Vdc)
VIL
5.0
10
15
—
—
—
1.0
2.0
2.5
—
—
—
2.25
4.50
6.75
1.0
2.0
2.5
—
—
—
(VO = 0.5 Vdc) “1” Level
(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
VIH 5.0
10
15
4.0
8.0
12.5
—
—
—
4.0
8.0
12.5
2.75
5.50
8.25
—
—
—
4
8
12
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 5.0
– 1.0
– 2.5
– 10
—
—
—
—
–
– 0
–
–
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
1.0
2.5
10
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ± 0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Gate) (CL = 50 pF)
IT 5.0
10
15
IT = (0.7 µA/kHz) f + IDD /6
IT = (1.4 µA/kHz) f + IDD /6
IT = (2.2 µA/kHz) f + IDD /6
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.003.
MC14007UB
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
V
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 49/449
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise Time
tTLH = (1.2 ns/pF) CL + 30 ns
tTLH = (0.5 ns/pF) CL + 20 nstTLH = (0.4 ns/pF) CL + 15 ns
tTLH
5.0
1015
—
— —
90
4535
Output Fall Time
tTHL = (1.2 ns/pF) CL + 15 ns
tTHL = (0.5 ns/pF) CL + 15 ns
tTHL = (0.4 ns/pF) CL + 10 ns
tTHL
5.0
10
15
—
—
—
75
40
30
Turn–Off Delay Time
tPLH = (1.5 ns/pF) CL + 35 ns
tPLH = (0.2 ns/pF) CL + 20 ns
tPLH = (0.15 ns/pF) CL + 17.5 ns
tPLH
5.0
10
15
—
—
—
60
30
25
Turn–On Delay Time
tPHL = (1.0 ns/pF) CL + 10 ns
tPHL = (0.3 ns/pF) CL + 15 ns
tPHL = (0.2 ns/pF) CL + 15 ns
tPHL
5.0
10
15
—
—
—
60
30
25
7. The formulas given are for the typical characteristics only. Switching specifications are for device connected as a8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
VDD = – VGS VDD = VGS
1414VDS = VOH – VDD
VSSVSS7
7
IOHIO
I O H ,
D R A I N C U
R R E N T ( m A d c )
I O L ,
D R A I N C U
R R E N T ( m A d c )
0
– 4.0
– 8.0
– 12
– 16
20
16
12
8.0
4.0
TA = –55°C
TA = +25°C
TA = +125°C
a
b
c
VGS = – 5.0 Vdc b
c
a
– 10 Vdc – 15 Vdc
c
bc
b
a
a
ab
c
a
b c
ab
c5.0
VGS = 15 Vdc
10 Vdc
All unused inputs connected to ground. All unused inputs connect
MC14007UB
VDD20 ns
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 50/449
Figure 4. Switching Time and Power Dissipation Test Circuit and Waveforms
PULSE
GENERATOR
500 µF0.01 µF
CERAMIC
14
CL
Vout
VSS7
Vin
ID Vin
Vout
90%50%10%
90%50%10%
tTHL t
tPHL
APPLICATIONS
The MC14007UB dual pair plus inverter, which hasaccess to all its elements offers a number of unique circuitapplications. Figures 1, 5, and 6 are a few examples of thedevice flexibility.
Figure 5. 3–State Buffer
+ VDD
DISABLE 3
INPUT 10
DISABLE 6
12 OUTPUT
11
1
2
9
8
7
INPUT DISABLE OUTPUT
1
0
X
0
0
1
0
1
OPEN
X = Don’t Care
Figure 6. AOI Functions Usi
VDD
14
13
11
10
3
6
B
C
A
9
5
4
8
7
O
Substrates of P–channel devices intern
Substrates of N–channel devices intern
12
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 51/449
The MC14008B 4–bit full adder is constructed with MOSP–channel and N–channel enhancement mode devices in a singlemonolithic structure. This device consists of four full adders with fastinternal look–ahead carry output. It is useful in binary addition andother arithmetic applications. The fast parallel carry output bit allowshigh–speed operation when used with other adders in a system.
• Look–Ahead Carry Output• Diode Protection on All Inputs
• All Outputs Buffered• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Pin–for–Pin Replacement for CD4008B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14008BCP PDIP–
MC14008BDR2 SOIC–
MC14008BF SOEIAJ–
1 For ordering information
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14008B
TRUTH TABLE
(One Stage)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 52/449
BLOCK DIAGRAM
HIGH–SPEED
PARALLEL CARRY14 Cout
13 S4
12 S3
11 S2
B4 15
A4 1
B3 2
A3 3
B2 4
A2 5
ADDER
4
ADDER
3
ADDER
2
C4
C3
C2
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
S3
S4
Cout
B4
VDD
Cin
S1
S2
B2
A3
B3
A4
VSS
A1
B1
A2
PIN ASSIGNMENT
Cin B A Cout S
0 0 0 0 0
0 0 1 0 1
0 1 0 0 10 1 1 1 0
1 0 0 0 1
1 0 1 1 0
1 1 0 1 0
1 1 1 1 1
MC14008B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 53/449
VDD
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 or VDD “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.9
9.9
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)(VO = 1.5 or 13.5 Vdc)
VIH 5.0
1015
3.5
7.011
—
— —
3.5
7.011
2.75
5.508.25
—
— —
3
71
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0
2Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (1.7 µA/kHz) f + IDD
IT = (3.4 µA/kHz) f + IDD
IT = (5.0 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.005.
MC14008B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
VDD
Vd (8 )
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 54/449
Characteristic Symbol Vdc Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 nstTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
1015
—
— —
100
5040
Propagation Delay Time
Sum in to Sum Out
tPLH, tPHL = (1.7 ns/pF) CL + 315 ns
tPLH, tPHL = (0.66 ns/pF) CL + 127 ns
tPLH, tPHL = (0.5 ns/pF) CL + 90 ns
Sum In to Carry Out
tPLH, tPHL = (1.7 ns/pF) CL + 220 ns
tPLH, tPHL = (0.66 ns/pF) CL + 112 nstPLH, tPHL = (0.5 ns/pF) CL + 85 ns
Carry In to Sum Out
tPLH, tPHL = (1.7 ns/pF) CL + 290 ns
tPLH, tPHL = (0.66 ns/pF) CL + 122 ns
tPLH, tPHL = (0.5 ns/pF) CL + 90 ns
Carry In to Carry Out
tPLH, tPHL = (1.7 ns/pF) CL + 85 ns
tPLH, tPHL = (0.66 ns/pF) CL + 42 ns
tPLH, tPHL = (0.5 ns/pF) CL + 30 ns
tPLH, tPHL
5.0
10
15
5.0
1015
5.0
10
15
5.0
10
15
—
—
—
—
—
—
—
—
—
—
—
—
400
160
115
305
145110
375
155
115
170
75
55
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
Figure 1. Typical Source Current
Characteristics Test Circuit
Figure 2. Typical S
Characteristics T
VDD = – VGS Vout
16
B4A4
B3
A3
B2
A2
B1
A1
Cin
S4
S3
S2
S1
Cout
IOH
8 VSS
EXTERNAL
POWERSUPPLY
VDD = VGS
16
B4A4
B3
A3
B2
A2
B1
A1
Cin
S4
S3
S2
S1
Cout
8 VSS
MC14008B
VDD
16
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 55/449
Figure 3. Dynamic Power Dissipation Test Circuit and Waveform
20 ns 20 ns
Vin
90%
10%
VDD
VSSPULSE
GENERATOR
16
B4
A4
B3
A3
B2
A2
B1
A1
Cin
S4
S3
S2
S1
Cout
IDD
8 VSSCL
CL
500 µF
PULSE
GENERATOR
VDD
16
B4
A4
B3
A3
B2
A2
B1
A1
Cin
S4
S3
S2
S1
Cout
IDD
8 VSSCL
CL
CL
CL
CL
20 ns 20 ns
Cin
VDD
VSS
VOH
tPLHtPHL
90%50%10%
90%
MC14008B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 56/449
Figure 5. Logic Diagram
Cin
A1
B1
A2
B2
A3
B3
A4
B4
WORD A + B INPUTS
A1 B4 A1 B4 A1 B4 A1 B4
Cin Cin Cin CinCout Cout Cout CoCHIP
1
CHIP
2
CHIP
3
CHIP
4
TYPICAL APPLICATION
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 57/449
The MC14013B dual type D flip–flop is constructed with MOSP–channel and N–channel enhancement mode devices in a singlemonolithic structure. Each flip–flop has independent Data, (D), DirectSet, (S), Direct Reset, (R), and Clock (C) inputs and complementaryoutputs (Q and Q). These devices may be used as shift registerelements or as type T flip–flops for counter and toggle applications.
• Static Operation• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Logic Edge–Clocked Flip–Flop Design
Logic state is retained indefinitely with clock level either high or low;information is transferred to the output only on the positive–goingedge of the clock pulse
• Capable of Driving Two Low–power TTL Loads or One Low–powerSchottky TTL Load Over the Rated Temperature Range
• Pin–for–Pin Replacement for CD4013B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin
, Iout
Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
http://onsem
A = Assemb
WL or L = Wafer L
YY or Y = Year
WW or W = Work W
Device Packag
ORDERING INF
MC14013BCP PDIP–
MC14013BD SOIC–
MC14013BDR2 SOIC–
PDIP–14
P SUFFIX
CASE 64
SOIC–14
D SUFFIX
CASE 751
TSSOP–1
DT SUFF
CASE 948
SOEIAJ–1
F SUFFIX
CASE 96
MC14013B
TRUTH TABLE
Inputs Outputs
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 58/449
Clock† Data Reset Set Q Q
0 0 0 0 1
1 0 0 1 0X 0 0 Q Q
X X 1 0 0 1
X X 0 1 1 0
X X 1 1 1 1
X = Don’t Care
† = Level Change
BLOCK DIAGRAM
10
11
9
8
4
3
5
6
12
13
2
1S
S
R
R
D
C
D
C
Q
Q
Q
Q
11
12
13
14
89
105
4
3
2
1
76
RB
CB
QB
QB
VDD
SB
DB
RA
CA
QA
QA
VSS
SA
DA
PIN ASSIGNMENT
No
Change
MC14013B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 59/449
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 or VDD “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.9
9.9
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)(VO = 1.5 or 13.5 Vdc)
VIH 5.0
1015
3.5
7.011
—
— —
3.5
7.011
2.75
5.508.25
—
— —
3
71
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL
= 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
1.0
2.0
4.0
—
—
—
0.002
0.004
0.006
1.0
2.0
4.0
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.75 µA/kHz) f + IDD
IT = (1.5 µA/kHz) f + IDD
IT = (2.3 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
MC14013B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time tTLH,
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 60/449
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
Clock to Q, Q
tPLH, tPHL = (1.7 ns/pF) CL + 90 ns
tPLH, tPHL = (0.66 ns/pF) CL + 42 ns
tPLH, tPHL = (0.5 ns/pF) CL + 25 ns
tPLH
tPHL5.0
10
15
—
—
—
175
75
50
Set to Q, Q
tPLH, tPHL = (1.7 ns/pF) CL + 90 ns
tPLH, tPHL = (0.66 ns/pF) CL + 42 ns
tPLH, tPHL = (0.5 ns/pF) CL + 25 ns
5.0
10
15
—
—
—
175
75
50
Reset to Q, QtPLH, tPHL = (1.7 ns/pF) CL + 265 ns
tPLH, tPHL = (0.66 ns/pF) CL + 67 ns
tPLH, tPHL = (0.5 ns/pF) CL + 50 ns
5.0
10
15
—
—
—
225
100
75
Setup Times (9.) tsu 5.0
10
15
40
20
15
20
10
7.5
Hold Times (9.) th 5.0
10
15
40
20
15
20
10
7.5
Clock Pulse Width tWL, tWH 5.0
10
15
250
100
70
125
50
35
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
4.0
10
14
Clock Pulse Rise and Fall Time tTLH
tTHL
5.0
10
15
—
—
—
—
—
—
Set and Reset Pulse Width tWL, tWH 5.0
10
15
250
100
70
125
50
35
Removal Times
Set
trem
5
10
15
80
45
35
0
5
5
Reset 5
10
15
50
30
25
– 35
– 10
– 57. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe9. Data must be valid for 250 ns with a 5 V supply, 100 ns with 10 V, and 70 ns with 15 V.
LOGIC DIAGRAM (1/2 of Device Shown)
MC14013B
20 ns 20 ns
D90%
50%10%
t (H) tsu (L)
VDD
VSS20 ns 20 ns
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 61/449
Figure 1. Dynamic Signal Waveforms
(Data, Clock, and Output)
Figure 2. Dynamic S
(Set, Reset, Clock
C
Q
tsu (H) tsu (L)
th
tWH tWL
90%50%
10%
VDD
VSS
VOH
VOL
tTLH tTHL
tPHLtPLH
90%50%10%
Inputs R and S low.
1
fcl
SET OR
RESET
CLOCK
Q OR Q
90%50%
10%
20 ns90%
5
50%
tPLH
tPHL
tw
20 ns
TYPICAL APPLICATIONS
n–STAGE SHIFT REGISTER
BINARY RIPPLE UP–COUNTER (Divide–by–2n)
MODIFIED RING COUNTER (Divide–by–(n+1))
D
CLOCK
nth21
D
C
Q
Q
D
C
Q
Q
D
C
Q
Q
CLOCK
nth21
D
C
Q
Q
D
C
Q
Q
D
C
Q
Q
T FLIP–FLOP
nth21
D
C
Q
Q
D
C
Q
Q
D
C
Q
Q
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 62/449
The MC14014B and MC14021B 8–bit static shift registers areconstructed with MOS P–channel and N–channel enhancement modedevices in a single monolithic structure. These shift registers findprimary use in parallel–to–serial data conversion, synchronous andasynchronous parallel input, serial output data queueing; and othergeneral purpose register applications requiring low power and/or highnoise immunity.
• Synchronous Parallel Input/Serial Output (MC14014B)•
Asynchronous Parallel Input/Serial Output (MC14021B)• Synchronous Serial Input/Serial Output• Full Static Operation• “Q” Outputs from Sixth, Seventh, and Eighth Stages• Double Diode Input Protection• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
• MC14014B Pin–for–Pin Replacement for CD4014B• MC14021B Pin–for–Pin Replacement for CD4021B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
http://onsem
XX = Specific
A = Assemb
WL or L = Wafer L
YY or Y = YearWW or W = Work W
Device Packa
ORDERING INF
MC14014BCP PDIP–
MC14014BD SOIC–
MC14014BDR2 SOIC–
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14014BF SOEIAJ
MC14014BFEL SOEIAJ
MC14021BCP PDIP
MC14014B, MC14021B
TRUTH TABLE
Q6 Q7 Q8
t Cl k D P/S t 6 t 7 t 8
SERIAL OPERATION:
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 63/449
t Clock DS P/S t=n+6 t=n+7 t=n+8
n 0 0 0 ? ?
n+1 1 0 1 0 ?n+2 0 0 0 1 0
n+3 1 0 1 0 1
X 0 Q6 Q7 Q8
Clock
MC14014B MC14021B DS P/S Pn *Qn
X X 1 0 0
X X 1 1 1
*Q6, Q7, & Q8 are available externally
PARALLEL OPERATION:
X = Don’t Care
LOGIC DIAGRAM
DS
P/S
P1 P2 P3 P6 P7 P7 6 5 14 15
10
11
9
D
C
Q D
C
Q D
C
Q D
C
Q D
C
Q D
CQ Q
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q7
P5
P6
P7
VDD
P/S
C
DS
P4
Q8
Q6
P8
VSS
P1
P2
P3
MC14014B, MC14021B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 64/449
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 or VDD “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.9
9.9
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)(VO = 1.5 or 13.5 Vdc)
VIH 5.0
1015
3.5
7.011
—
— —
3.5
7.011
2.75
5.508.25
—
— —
3
71
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL
= 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
15
—
—
—
0.005
0.010
0.015
5.0
10
15
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.75 µA/kHz) f + IDD
IT = (1.50 µA/kHz) f + IDD
IT = (2.25 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.0015.
MC14014B, MC14021B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
O t t Ri d F ll Ti t
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 65/449
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 nstTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
1015
—
— —
100
5040
Propagation Delay Time (Clock to Q, P/S to Q)
tPHL, tPLH = (1.7 ns/pF) CL + 315 ns
tPHL, tPLH = (0.66 ns/pF) CL + 137 ns
tPHL, tPLH = (0.5 ns/pF) CL + 90 ns
tPLH,
tPHL 5.0
10
15
—
—
—
400
170
115
Clock Pulse Width tWH 5.0
10
15
400
175
135
150
75
40
Clock Frequency fcl 5.0
10
15
—
—
—
3.0
6.0
8.0
Parallel/Serial Control Pulse Width tWH 5.0
10
15
400
175
135
150
75
40
Setup Time
P/S to Clock
tsu 5.0
10
15
200
100
80
100
50
40
Hold Time
Clock to P/S
th 5.0
10
15
20
20
25
– 2.5
– 10
0
Setup Time
Data (Parallel or Serial) to
Clock or P/S
tsu 5.0
10
15
350
80
60
150
50
30
Hold Time
Clock to Ds
th 5.0
10
15
45
35
35
0
0
5
Hold Time
Clock to Pn
th 5.0
10
15
50
45
45
25
20
20
Input Clock Rise Time tr(cl) 5.0
10
15
—
—
—
—
—
—
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
PULSE PULSE
VDD Vout
P/SC
Q6
VDD
P/SC
Q6
MC14014B, MC14021B
VDD
500 µF ID
0.01 µF
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 66/449
Figure 3. Power Dissipation Test Circuit and Waveform
PULSEGENERATOR 1
P/S
C
P6P7
P8DS
Q8
Q7
Q6
PULSE
GENERATOR 2
µ
CERAMIC
CL
CL
CL
VSS
P5P4P3
P2P1
CLOCK
DATA
50%
1
f
PULSE
GENERATOR 1
PULSE
GENERATOR 2
VDD1
2
22
1 1
VDD
VSS
SW 1
SW 2
CL
Q8
Q7
Q6P/SC
P6
P7P8
DS
P5
P4P3P2P1
20 ns
PARALLEL ORSERIAL DATA
INPUT
CLOCK OR P/S
INPUT
QOUTPUT
90%50%10%
tsu
tWH
90%50%10%
tWH
tPLH
90%50%10%
tTLH
tWL = tWH = 50
SWITCH POSITION 1 = PARALLEL IN
SWITCH POSITION 2 = SERIAL IN
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 67/449
The MC14015B dual 4–bit static shift register is constructed withMOS P–channel and N–channel enhancement mode devices in asingle monolithic structure. It consists of two identical, independent4–state serial–input/parallel–output registers. Each register hasindependent Clock and Reset inputs with a single serial Data input.The register states are type D master–slave flip–flops. Data is shiftedfrom one stage to the next during the positive–going clock transition.Each register can be cleared when a high level is applied on the Resetline. These complementary MOS shift registers find primary use inbuffer storage and serial–to–parallel conversion where low powerdissipation and/or noise immunity is desired.
• Diode Protection on All Inputs• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Logic Edge–Clocked Flip–Flop Design —
Logic state is retained indefinitely with clock level either high or low;information is transferred to the output only on the positive goingedge of the clock pulse.
• Capable of Driving Two Low–power TTL Loads or One Low–powerSchottky TTL Load Over the Rated Temperature Range.
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14015BCP PDIP–
MC14015BD SOIC–
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFICASE 96
TSSOP–
DT SUFF
CASE 94
MC14015B
TRUTH TABLE
C D R Q0 Qn
0 0 0 Qn–1
1 0 1 Q
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 68/449
1 0 1 Qn–1
X 0 No Change No Change
X X 1 0 0
X = Don’t Care
Qn = Q0, Q1, Q2, or Q3, as applicable.
Qn–1 = Output of prior stage.
BLOCK DIAGRAM
14
1
15
6
9
75
4
3
10
13
12
11
2
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
D
CR
R
D
C
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q1B
Q0B
RB
DB
VDD
CA
Q3A
Q2B
Q1A
Q2A
Q3B
CB
VSS
DA
RA
Q0A
MC14015B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level VO 5 0 0 05 0 0 05
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 69/449
Output Voltage 0 Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 or VDD “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.9
9.9
14
Input Voltage “0” Level
(VO = 4.5 or .05 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)(VO = 1.5 or 13.5 Vdc)
VIH 5.0
1015
3.5
7.011
—
— —
3.5
7.011
2.75
5.508.25
—
— —
3
71
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (1.2 µA/kHz)f + IDD
IT = (2.4 µA/kHz)f + IDD
IT = (3.6 µA/kHz)f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
MC14015B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH,
tTHL 5.0 — 100
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 70/449
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
10
15
—
—
50
40
Propagation Delay Time
Clock, Data to Q
tPLH, tPHL = (1.7 ns/pF) CL + 225 ns
tPLH, tPHL = (0.66 ns/pF) CL + 92 ns
tPLH, tPHL = (0.5 ns/pF) CL + 65 ns
Reset to Q
tPLH, tPHL = (1.7 ns/pF) CL + 375 ns
tPLH, tPHL = (0.66 ns/pF) CL + 147 ns
tPLH, tPHL = (0.5 ns/pF) CL + 95 ns
tPLH,
tPHL
5.0
10
15
5.0
10
15
—
—
—
—
—
—
310
125
90
460
180
120
Clock Pulse Width tWH
5.0
10
15
400
175
135
185
85
55
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
2.0
6.0
7.5
Clock Pulse Rise and Fall Times tTLH, tTHL 5.0
10
15
—
—
—
—
—
—
Reset Pulse Width tWH
5.0
10
15
400
160
120
200
80
60
Setup Time tsu 5.0
10
15
350
100
75
100
50
40
7. The formulas given are for typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
PULSE
GENERATOR
2
CLOCK 50%
1
f
PULSE
GENERATOR
1
500 µF
VDD
ID0.01 µF
CERAMIC
CL
Q0Q1Q2Q3
D
CR
VSS
CL
CL
CL
VDD
MC14015B
DATA
INPUT
tTLH
tsu
90%50
1
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 71/449
Figure 2. Switching Test Circuit and Waveforms
VDD
CL
VSS
PULSE
GENERATOR2
PULSE
GENERATOR
1
Q0
Q1
Q2
Q3
D
CR
CL
CL
CL
CLOCK
INPUT
tTLH tTH
tWH tW
Q0
tTLH
tPLH tPHL
10
tWL = tWH = 50% Duty Cycle
tTLH = tTHL ≤ 20 ns
SYNC
t –
Figure 3. Setup and Hold Time Test Circuit and Waveforms
VDD
CL
VSS
PULSE
GENERATOR
2
PULSEGENERATOR
1
Q0
Q1
Q2Q3
D
CR
CL
CL
CLSYNC
CLOCK
INPUT
DATA
INPUT
50%
tsu
50%
MC14015B
CIRCUIT SCHEMATICS
F E R T
O D O F
N E X T B I T
C L O C K
O 4 B I T S
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 72/449
A T A I N P U T B U
F F E R
R E S E T I N P U T
B U F F E R
C L O C K
I N P U T B U F F
S I N G L E B I T
Q
V D D
V S S
D A T A
I N
C L O C K
R E S E T
V D D
V D D
V D D
R E S E T
I N
C L O C K
I N
C T O
R E S E T
T O 4 B I T S
D A T A T O
F I R S T B I T
MC14015B
LOGIC DIAGRAMS
SINGLE BIT
C C
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 73/449
DATA
RESET
C
C C
C
C
C C
C
C
C
C
COMPLETE DEVICE
D
C
R
D
C
R14
1
15
6
9
7
DATA INPUT BUFFER
CLOCK INPUT BUFFER
RESET INPUT BUFFER
DATA INPUT BUFFER
CLOCK INPUT BUFFER
RESET INPUT BUFFER
5 4 3Q0 Q1 Q2
D
CR
Q
Q
D
CR
Q
Q
D
CR
Q
Q
D
C
111213Q0 Q1 Q2
D
CR
Q
Q
D
CR
Q
Q
D
CR
Q
Q
D
C
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 74/449
The MC14016B quad bilateral switch is constructed with MOSP–channel and N–channel enhancement mode devices in a singlemonolithic structure. Each MC14016B consists of four independentswitches capable of controlling either digital or analog signals. Thequad bilateral switch is used in signal gating, chopper, modulator,demodulator and CMOS logic implementation.
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Linearized Transfer Characteristics• Low Noise — 12 nV/ √Cycle, f ≥ 1.0 kHz typical• Pin–for–Pin Replacements for CD4016B, CD4066B (Note improved
transfer characteristic design causes more parasitic couplingcapacitance than CD4016)
• For Lower RON, Use The HC4016 High–Speed CMOS Device orThe MC14066B
• This Device Has Inputs and Outputs Which Do Not Have ESDProtection. Antistatic Precautions Must Be Taken.
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range(DC or Transient)
–0.5 to VDD + 0.5 V
Iin Input Current (DC or Transient)
per Control Pin
± 10 mA
ISW Switch Through Current ± 25 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
http://onsem
A = Assemb
WL or L = Wafer L
YY or Y = Year
WW or W = Work W
Device Packag
ORDERING INF
MC14016BCP PDIP–
MC14016BD SOIC–
MC14016BDR2 SOIC–
MC14016BF SOEIAJ–
PDIP–14
P SUFFIX
CASE 64
SOIC–14
D SUFFIX
CASE 751
SOEIAJ–1
F SUFFIX
CASE 96
1 For ordering information
MC14016BFEL SOEIAJ–
MC14016B
PIN ASSIGNMENT
13
14
2
1
CONTROL 1
VDD
OUT 1
IN 1
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 75/449
BLOCK DIAGRAM
CONTROL 1
IN 1
CONTROL 2
IN 2
CONTROL 3
IN 3
CONTROL 4
IN 4
OUT 1
OUT 2
OUT 3
OUT 4
13
1
5
4
6
8
12
11
2
3
9
10
VDD = PIN 14
VSS = PIN 7
Control Switch
0 = VSS Off
1 = VDD On
11
12
8
9
105
4
3
7
6
OUT 4
IN 4
CONTROL 4
IN 3
OUT 3
IN 2
OUT 2
VSS
CONTROL 3
CONTROL 2
LOGIC DIAGRAM
(1/4 OF DEVICE SHOWN)
CONTROL
OUT
MC14016B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Figure Symbol
Vdc Min Max Min Typ (4.) Max
Input Voltage
Control Input
1 VIL 5.0
10
—
—
—
—
—
—
1.5
1 5
0.9
0 9
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 76/449
Control Input 10
15
—
—
—
—
—
—
1.5
1.5
0.9
0.9VIH 5.0
10
15
—
—
—
—
—
—
3.0
8.0
13
2.0
6.0
11
—
—
—
Input Current Control — Iin 15 — ± 0.1 — ±0.00001 ±0.1
Input Capacitance
Control
Switch Input
Switch Output
Feed Through
— Cin
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
5.0
5.0
0.2
—
—
—
—
Quiescent Current
(Per Package) (5.)2,3 IDD 5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
“ON” Resistance
(VC = VDD, RL = 10 kΩ)
(Vin = + 5.0 Vdc)
(Vin = – 5.0 Vdc) VSS = – 5.0 Vdc
(Vin = ± 0.25 Vdc)
4,5,6 RON
5.0
—
—
—
600
600
600
—
—
—
—
—
300
300
280
660
660
660
(Vin = + 7.5 Vdc)
(Vin = – 7.5 Vdc) VSS = – 7.5 Vdc
(Vin = ± 0.25 Vdc) 7.5
—
—
—
360
360
360
—
—
—
240
240
180
400
400
400
(Vin = + 10 Vdc)
(Vin = + 0.25 Vdc) VSS = 0 Vdc
(Vin = + 5.6 Vdc) 10
—
—
—
600
600
600
—
—
—
260
310
310
660
660
660
(Vin = + 15 Vdc)
(Vin = + 0.25 Vdc) VSS = 0 Vdc
(Vin = + 9.3 Vdc) 15
—
—
—
360
360
360
—
—
—
260
260
300
400
400
400
∆ “ON” Resistance
Between any 2 circuits in a commonpackage
(VC = VDD)
(Vin = ± 5.0 Vdc, VSS = – 5.0 Vdc)
(Vin = ± 7.5 Vdc, VSS = – 7.5 Vdc)
— ∆RON
5.0
7.5
—
—
—
—
—
—
15
10
—
—
Input/Output Leakage Current
(VC = VSS)
(Vin = + 7.5, Vout = – 7.5 Vdc)
(Vin = – 7.5, Vout = + 7.5 Vdc)
— —
7.5
7.5
—
—
± 0.1
± 0.1
—
—
± 0.0015
± 0.0015
±0.1
± 0.1
NOTE: All unused inputs must be returned to VDD or VSS as appropriate for the circuit application.
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. For voltage drops across the switch (∆Vswitch) > 600 mV ( > 300 mV at high temperature), excessive VDD curren
current out of the switch may contain both VDD and switch input components. The reliability of the device will bMaximum Ratings are exceeded. (See first page of this data sheet.) Reference Figure 14.
MC14016B
ELECTRICAL CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
Characteristic Figure Symbol
VDD
Vdc Min Typ (7.)
Propagation Delay Time (VSS = 0 Vdc)
Vin to Vout
(V V R 10 k )
7 tPLH,
tPHL
5.0
10
—
—
15
7.0
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 77/449
(VC = VDD, RL = 10 kΩ) 15 — 6.0
Control to Output
(Vin 10 Vdc, RL = 10 kΩ)
8 tPHZ,
tPLZ,
tPZH,
tPZL
5.0
10
15
—
—
—
34
20
15
Crosstalk, Control to Output (VSS = 0 Vdc)
(VC = VDD, Rin = 10 kΩ, Rout = 10 kΩ,
f = 1.0 kHz)
9 — 5.0
10
15
—
—
—
30
50
100
Crosstalk between any two switches (VSS = 0 Vdc)
(RL = 1.0 kΩ, f = 1.0 MHz,
crosstalk 20log10 Vout1Vout2
)
— — 5.0 — – 80
Noise Voltage (VSS = 0 Vdc)
(VC = VDD, f = 100 Hz)
10,11 — 5.0
10
15
—
—
—
24
25
30
(VC = VDD, f = 100 kHz) 5.0
10
15
—
—
—
12
12
15
Second Harmonic Distortion (VSS = – 5.0 Vdc)
(Vin
= 1.77 Vdc, RMS Centered @ 0.0 Vdc,
RL = 10 kΩ, f = 1.0 kHz)
— — 5.0 — 0.16
Insertion Loss (VC = VDD, Vin = 1.77 Vdc,
VSS = – 5.0 Vdc, RMS centered = 0.0 Vdc, f = 1.0 MHz)
Iloss 20log10VoutVin
)
(RL = 1.0 kΩ)
(RL = 10 kΩ)
(RL = 100 kΩ)
(RL = 1.0 MΩ)
12 — 5.0
—
—
—
—
2.3
0.2
0.1
0.05
Bandwidth (– 3.0 dB)(VC = VDD, Vin = 1.77 Vdc, VSS = – 5.0 Vdc,
RMS centered @ 0.0 Vdc)
(RL = 1.0 kΩ)
(RL = 10 kΩ)
(RL = 100 kΩ)
(RL = 1.0 MΩ)
12,13 BW 5.0
—
—
—
—
54
40
38
37
OFF Channel Feedthrough Attenuation
(VSS = – 5.0 Vdc)VoutVin
–50dB)
(RL = 1.0 kΩ)(RL = 10 kΩ)
(RL = 100 kΩ)
(RL = 1.0 MΩ)
(VC = VSS, 20 log10
— — 5.0
—
—
—
—
1250
140
18
2.0
6. The formulas given are for typical characteristics only at 25 C.7 Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14016B
VC
Vin Vout
IS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 78/449
Figure 1. Input Voltage Test Circuit
VIL: VC is raised from VSS until VC = VIL.VIL: at VC = VIL: IS = ±10 µA with Vin = VSS, Vout = VDD or Vin = VDD, Vout = VSS.
VIH: When VC = VIH to VDD, the switch is ON and the RON specifications are met.
Figure 2. Quiescent Power Dissipation
Test CircuitFigure 3. Typical Power Dissip
(1/4 of device sho
PULSE
GENERATOR
VDD
10 k
ID
VDD Vout
VSS Vin
fc
TO ALL
4 CIRCUITS
PD = VDD x ID1.0 M100 k10 k5.0 k
10,000
1000
100
10
1.0
TA = 25°C
fc, FREQUENCY (Hz
, P O W E R D I S S I P A T I O N (
P D
µ W )
CONTROL
INPUT
VDD = 15 V
TYPICAL RON versus INPUT VOLTAGE
, “ O N ” R E S I S T A N C E ( O H M S )
R O N
700
600
500
400
300
200
100
, “ O N ” R E S I S T A N C E ( O H M S )
R O N
700
600
500
400
300
200
100
RL = 10 kΩ
TA = 25°C
VC = VDD = 5.0 Vdc
VSS = – 5.0 Vdc
VC = VDD = 7.5 Vdc
VSS = –7.5 Vdc
VC = VDD = 10 Vdc
VC
MC14016B
Vout
Vin
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 79/449
Figure 6. RON Characteristics
Test Circuit
Figure 7. Propagation Delay
and Waveforms
VC
Vin
Vout
RL20 ns
Vin
Vout
tPLH tPHL
50%90%
Figure 8. Turn–On Delay Time Test Circuitand Waveforms
Figure 9. Crosstalk
VC
Vout
Vin
RL CL
VX
20 ns
VC
Vout
Vout
10%
90%10%
90%
90%50%10%
tPZH tPHZ
VDD
VSS
tPLZtPZL
Vin = VDD
Vx = VSS
Vin = VSS
Vx = VDD
VC
Vout
Vin
1 k
OUT QUAN–TECH
35
30
25
2010 Vdc
5.0 Vdc
E V O L T A G E ( n V / C
Y C L E )
15
10
VDD = 15 Vdc
MC14016B
2.0
0
– 2.0
RL = 1 MΩ AND 100 kΩ
– 4.0O N L O S S ( d B )
10 kΩ
1.0 kΩ
– 3 0 dB (RL = 1 0 MΩ )
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 80/449
Figure 12. Typical Insertion Loss/BandwidthCharacteristics
Figure 13. Frequency Res
VC
Vin
+ 2.5 Vdc
0.0 Vdc
– 2.5 Vdc100 M10 M1.0 M100 k10 k
fin, INPUT FREQUENCY (Hz)
– 6.0
– 8.0
– 10
– 12
T Y P I C A L I N S E R
T I 3.0 dB (RL = 1.0 MΩ )
– 3.0 dB (RL = 10 kΩ )
– 3.0 dB (RL = 1.0 kΩ )
Figure 14. ∆V Across Switch
CONTROL
SECTION
OF IC
SOURCE
V
LOAD
ON SWITCH
MC14016B
APPLICATIONS INFORMATION
Figure A illustrates use of the Analog Switch. The 0–to–5V Digital Control signal is used to directly control a 5 Vp–panalog signal.
The digital control logic levels are determined by VDD
The example shows a 5 Vp–p sigmargin at either peak. If voltage trand/or below VSS are anticipated onexternal diodes (Dx) are recommend
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 81/449
g g y DD
and VSS. The VDD voltage is the logic high voltage; the VSSvoltage is logic low. For the example, VDD = +5 V logic highat the control inputs; VSS = GND = 0 V logic low.
The maximum analog signal level is determined by VDDand VSS. The analog voltage must not swing higher thanVDD or lower than VSS.
( x)
B. These diodes should be small signthe maximum anticipated current sur
The absolute maximum potentiaVDD and VSS is 18.0 V. Most parame15 V which is the recommended
between VDD and VSS.
Figure A. Application Example
+ 5 V
VDD VSS
SWITCH
INSWITCH
OUT
5 Vp–p
ANALOG SIGNAL
0–TO–5 V DIGITAL
CONTROL SIGNALS
+ 5 V
EXTERNAL
CMOS
DIGITAL
CIRCUITRY
5 Vp–p
ANALOG SIGNAL
MC14016B
Figure B. External Germanium or Schottky Clipping Diodes
VDD VDD
Dx
Dx
Dx
Dx
VSS VSS
SWITCH
IN
SWITCH
OUT
The MC14017B is a five stage Johnson decade counter with
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 82/449
The MC14017B is a five–stage Johnson decade counter withbuilt–in code converter. High speed operation and spike–free outputsare obtained by use of a Johnson decade counter design. The tendecoded outputs are normally low, and go high only at theirappropriate decimal time period. The output changes occur on thepositive–going edge of the clock pulse. This part can be used infrequency division applications as well as decade counter or decimaldecode display applications.
• Fully Static Operation
• DC Clock Input Circuit Allows Slow Rise Times• Carry Out Output for Cascading• Divide–by–N Counting• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Pin–for–Pin Replacement for CD4017B• Triple Diode Protection on All Inputs
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
http://onsem
A = Assem
WL or L = Wafer
YY or Y = YearWW or W = Work
Device Packag
ORDERING INF
MC14017BCP PDIP–
MC14017BD SOIC–
MC14017BDR2 SOIC–
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14017BF SOEIAJ–
MC14017BFEL SOEIAJ–
MC14017B
PIN ASSIGNMENT
13
14
15
16
4
3
2
1
CE
CLOCK
RESET
VDD
Q2
Q0
Q1
Q5
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 83/449
BLOCK DIAGRAMFUNCTIONAL TRUTH TABLE
(Positive Logic)
Clock Decode
Clock Enable Reset Output=n
0 X 0 n
X 1 0 n
X X 1 Q0
0 0 n+1
X 0 n
X 0 n
1 0 n+1
X = Don’t Care. If n < 5 Carry = “1”,
Otherwise = “0”.
CLOCK
CLOCK
ENABLE
RESET
14
13
15 CoutQ9
Q8
Q7
Q6Q5
Q4Q3
Q2
Q1Q0
VDD = PIN 16
VSS = PIN 8
LOGIC DIAGRAM
CLOCK
CLOCK
ENABLE
RESET
Q5 Q1 Q7 Q3 Q9
117621
14
13
15
C
CD
R R
Q
Q
9
10
11
125
8
7
6
Cout
CE
Q8
Q4
Q9
VSS
Q3
Q7
Q6
C
CD
R R
Q
Q
C
CD
R R
Q
Q
C
CD
R R
Q
Q
C
CD
R R
Q
Q
MC14017B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 84/449
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.9
9.9
14.
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3.
7.
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0.
2.
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.27 µA/kHz) f + IDD
IT = (0.55 µA/kHz) f + IDD
IT = (0.83 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.0011.
MC14017B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH,
tTHL 5.0
10
—
—
100
50
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 85/449
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns 15 — 40
Propagation Delay Time
Reset to Decode Output
tPLH, tPHL = (1.7 ns/pF) CL + 415 ns
tPLH, tPHL = (0.66 ns/PF) CL + 197 ns
tPLH, tPHL = (0.5 ns/pF) CL + 150 ns
tPLH,
tPHL
5.0
10
15
—
—
—
500
230
175
Propagation Delay Time
Clock to Cout
tPLH, tPHL = (1.7 ns/pF) CL + 315 ns
tPLH, tPHL = (0.66 ns/pF) CL + 142 ns
tPLH, tPHL = (0.5 ns/pF) CL + 100 ns
tPLH,
tPHL
5.0
10
15
—
—
—
400
175
125
Propagation Delay Time
Clock to Decode Output
tPLH, tPHL = (1.7 ns/pF) CL + 415 ns
tPLH, tPHL = (0.66 ns/pF) CL + 197 ns
tPLH, tPHL = (0.5 ns/pF) CL + 150 ns
tPLH,
tPHL
5.0
10
15
—
—
—
500
230
175
Turn–Off Delay Time
Reset to Cout
tPLH = (1.7 ns/pF) CL + 315 ns
tPLH = (0.66 ns/pF) CL + 142 nstPLH = (0.5 ns/pF) CL + 100 ns
tPLH
5.0
1015
—
— —
400
175125
Clock Pulse Width tw(H) 5.0
10
15
250
100
75
125
50
35
Clock Frequency fcl 5.0
10
15
—
—
—
5.0
12
16
Reset Pulse Width tw(H) 5.0
1015
500
250190
250
12595
Reset Removal Time trem 5.0
10
15
750
275
210
375
135
105
Clock Input Rise and Fall Time tTLH,
tTHL
5.0
10
15
No Limit
Clock Enable Setup Time tsu 5.0
10
15
350
150
115
175
75
52
Clock Enable Removal Time trem 5.0
10
15
420
200
140
260
100
70
MC14017B
VDD
Vout
VSSCLOCK
ENABLEQ0
Q1
Q2
Q3
Output
Sink Drive
Decode(S1 to A)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 86/449
Figure 1. Typical Output Source and Output Sink Characteristics Test Circui
VDD
VSS
S1
S1
A
B
VSS
ID
EXTERNAL
POWER
SUPPLY
RESET
CLOCK Cout
Q4
Q5
Q6
Q7
Q8
Q9
Outputs
Carry
Clock to 5
thru 9
(S1 to B)
VGS = VDD
VDS = Vout
Figure 2. Typical Power Dissipation Test Circuit
VDD
VSS
ID
CLOCK
ENABLE
RESET
CLOCK
Cout
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Q9
500 µF0.01 µF
CERAMIC
PULSE
GENERATOR
fc
CL CL CL CL CL CL CL CL
MC14017B
APPLICATIONS INFORMATION
Figure 3 shows a technique for extending the number of decoded output states for the MC14017Bsequential within each stage and from stage to stage, with no dead time (except propagation delay).
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 87/449
Figure 3. Counter Expansion
RESETCLOCK
CE MC14017B
Q0 Q1 Q8 Q9• • •
9 DECODED
OUTPUTS
CLOCKFIRST STAGE INTERMEDIATE STAGES LAST STAGE
RESETCLOCK
CE MC14017B
Q0Q1 Q8 Q9• • •
RESETCLOCK
CE MC14017B
Q1 Q8• • •
8 DECODED
OUTPUTS
8 DECODED
OUTPUTS
Pcp NcpCLOCK
CLOCK
ENABLEtrem
RESET
20 ns
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
tPHL
tPHLtPLH
tPLH
tPLH
tPLH
tPLH
tPLH
tTHL
tTHL
tPLH
t
tPHL
tPHL
tPHL
50%
tPHL
tPHL
90%10%tTHL
tPHL
trem tsu 20 ns 20 ns
20 ns20 ns
tPLH
90%10% 50%
tTLH
tTLH
tTLH
tTLH
tTLH
tTHL
tTHL
tT
20
t
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 88/449
The MC14018B contains five Johnson counter stages which areasynchronously presettable and resettable. The counters aresynchronous, and increment on the positive going edge of the clock.
Presetting is accomplished by a logic 1 on the preset enable input.Data on the Jam inputs will then be transferred to their respective Qoutputs (inverted). A logic 1 on the reset input will cause all Q outputsto go to a logic 1 state.
Division by any number from 2 to 10 can be accomplished by
connecting appropriate Q outputs to the data input, as shown in theFunction Selection table. Anti–lock gating is included in theMC14018B to assure proper counting sequence.
• Fully Static Operation• Schmitt Trigger on Clock Input• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Pin–for–Pin Replacement for CD4018B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
http://onsem
A = Assem
WL or L = Wafer
YY or Y = YearWW or W = Work
Device Packag
ORDERING INF
MC14018BCP PDIP–
MC14018BD SOIC–MC14018BDR2 SOIC–
PDIP–16P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14018BF SOEIAJ–
MC14018BFEL SOEIAJ–
MC14018B
PIN ASSIGNMENT
13
14
15
16
125
4
3
2
1
JAM 5
Q5
C
R
VDD
Q2
JAM 2
JAM 1
Din
Q1
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 89/449
FUNCTIONAL TRUTH TABLE
Preset Jam
Clock Reset Enable Input Qn
0 0 X Qn
0 0 X Dn*
X 0 1 0 1
X 0 1 1 0
X 1 X X 1
*Dn is the Data input for that stage. Stage 1
has Data brought out to Pin 1.
9
10
11
125
8
7
6
JAM 5
JAM 4
PE
Q4
VSS
JAM 3
Q3
Q1
MC14018B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 90/449
Vin = 0 or VDD “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.9
9.9
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH 5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, allbuffers switching)
IT 5.0
10
15
IT = (0.3 µA/kHz) f + IDD
IT = (0.7 µA/kHz) f + IDD
IT = (1.0 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
MC14018B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
VDDAll Types
Characteristic Symbol
Vdc Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.35 ns/pF) CL + 32 ns
tTLH, tTHL = (0.6 ns/pF) CL + 20 ns
tTLH, tTHL = (0.4 ns/pF) CL + 20 ns
tTLH, tTHL
5.0
10
15
—
—
—
100
50
40
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 91/449
tTLH, tTHL (0 s/p ) CL 0 s 5 0
Propagation Delay Time
Clock to Q
tPLH, tPHL = (0.90 ns/pF) CL + 265 ns
tPLH, tPHL = (0.36 ns/pF) CL + 102 ns
tPLH, tPHL = (0.26 ns/pF) CL + 72 ns
tPLH,
tPHL
5.0
10
15
—
—
—
310
120
85
Reset to Q
tPLH = (0.90 ns/pF) CL + 325 ns
tPLH = (0.36 ns/pF) CL + 132 ns
tPLH = (0.26 ns/pF) CL + 81 ns
5.0
10
15
—
—
—
370
150
100Preset Enable to Q
tPLH, tPHL = (0.90 ns/pF) CL + 325 ns
tPLH, tPHL = (0.36 ns/pF) CL + 132 ns
tPLH, tPHL = (0.26 ns/pF) CL + 81 ns
5.0
10
15
—
—
—
370
150
100
Setup Time
Data (Pin 1) to Clock
tsu
5.0
10
15
200
100
80
0
0
0
Jam Inputs to Preset Enable 5.0
10
15
200
100
80
0
0
0
Data (Jam Inputs)–to–Preset
Enable Hold Time
th 5.0
10
15
540
500
480
270
250
240
Clock Pulse Width tWH 5.0
10
15
400
200
160
200
100
80
Reset or Preset Enable
Pulse Width
tWH 5.0
1015
290
130110
145
6555
Clock Rise and Fall Time tTLH, tTHL 5.0
10
15
No Limit
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
2.5
6.5
8.0
7. The formulas given are for the typical characteristics only at 25 C.
8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
ANY INPUT
20 ns 20 ns
90%50%
VDD
MC14018B
CLOCK
RESET
PRESET ENABLE
JAM 1
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 92/449
TIMING DIAGRAM
(Q5 Connected to Data Input)
JAM 2
JAM 3
JAM 4
JAM 5
Q1
Q2
Q3
Q4
Q5
DON’T CARE
UNTIL PRESET ENABLE
GOES HIGH
LOGIC DIAGRAM
JAM 1 JAM 2 JAM 3732
CLOCK 14
DATA 1
CLOCK
SHAPER
S S SD D D
C C C
Q Q Q
Q
FUNCTION SELECTION
Counter
Mode
Connect
Data Input
(Pin 1) to: Comments
Divide by 10
Divide by 8
Divide by 6Divide by 4
Divide by 2
Q5
Q4
Q3Q2
Q1
No external
components needed.
Divide by 9
Divide by 7
Divide by 5
Divide by 3
Q5 • Q4
Q4 • Q3
Q3 • Q2
Q2 • Q1
Gate package needed
to provide AND
function. Counter
Skips all 1’s state
The MC14020B 14–stage binary counter is constructed with MOS
P–channel and N–channel enhancement mode devices in a single
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 93/449
P channel and N channel enhancement mode devices in a singlemonolithic structure. This part is designed with an input wave shapingcircuit and 14 stages of ripple–carry binary counter. The deviceadvances the count on the negative–going edge of the clock pulse.Applications include time delay circuits, counter controls, andfrequency–dividing circuits.
• Fully Static Operation• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Buffered Outputs Available from stages 1 and 4 thru 14• Common Reset Line• Pin–for–Pin Replacement for CD4020B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high impedancecircuit For proper operation V and V shouldbeconstrained
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14020BCP PDIP–
MC14020BD SOIC–
PDIP–16P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
TSSOP–
DT SUFF
CASE 94
MC14020B
PIN ASSIGNMENT
13
14
15
16
125
4
3
2
1
Q9
Q8
Q10
Q11
VDD
Q6
Q14
Q13
Q12
Q5
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 94/449
TRUTH TABLE
Clock Reset Output State
0 No Change
0 Advance to Next State
X 1 All Outputs are Low
X = Don’t Care
LOGIC DIAGRAM
CLOCK
RESET
11
10
Q1 Q4 Q5 Q129 7 5 1
C
C
R
Q
Q
C
CR
Q
Q
C
C
R
Q
Q
C
CR
Q
Q
C
C
Q6 = PIN 4
Q7 = PIN 6
Q8 = PIN 13
Q9 = PIN 12
Q10 = PIN 14
Q11 = PIN 15
VDD = PIN 16
VSS = PIN 8
9
10
11
8
7
6
Q1
C
R
VSS
Q4
Q7
MC14020B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level VOH 5.0 4.95 — 4.95 5.0 — 4.9
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 95/449
Vin = 0 or VDD
OH
10
15
9.95
14.95
—
—
9.95
14.95
10
15
—
—
9.9
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)(VO = 1.5 or 13.5 Vdc)
VIH
5.0
1015
3.5
7.011
—
— —
3.5
7.011
2.75
5.508.25
—
— —
3
71
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL
= 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.42 µA/kHz)f + IDD
IT = (0.85 µA/kHz)f + IDD
IT = (1.43 µA/kHz)f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
MC14020B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40Propagation Delay Time tPLH
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 96/449
Propagation Delay Time
Clock to Q1
tPHL, tPLH = (1.7 ns/pF) CL + 175 ns
tPHL, tPLH = (0.66 ns/pF) CL + 82 ns
tPHL, tPLH = (0.5 ns/pF) CL + 55 ns
tPLH,
tPHL
5.0
10
15
—
—
—
260
115
80
Clock to Q14
tPHL, tPLH – (1.7 ns/pF) CL + 1735 ns
tPHL, tPLH = (0.66 ns/pF) CL + 772 ns
tPHL, tPLH = (0.5 ns/pF) CL + 535 ns
5.0
10
15
—
—
—
1820
805
560
Propagation Delay Time
Reset to Qn
tPHL = (1.7 ns/pF) CL + 285 ns
tPHL = (0.66 ns/pF) CL + 122 ns
tPHL = (0.5 ns/pF) CL + 90 ns
tPHL
5.0
10
15
—
—
—
370
155
115
Clock Pulse Width tWH 5.0
10
15
500
165
125
140
55
38
Clock Pulse Frequency fcl 5.0
1015
—
— —
2.0
6.08.0
Clock Rise and Fall Time tTLH, tTHL 5.0
10
15
No Limit
Reset Pulse Width tWL 5.0
10
15
3000
550
420
320
120
80
Reset Removal Time trem 5.0
1015
130
5030
65
2515
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14020B
500 µF0.01 µF
CERAMIC
PULSE
GENERATOR
VDD
CL
C
R
Q1
Q4Qn
ID PULSE
GENERATOR
VDD
V
C
R
Q1
Q4
Qn
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 97/449
Figure 1. Power Dissipation Test Circuit
and Waveform
Figure 2. Switching Ti
and Wavefo
L
CLCLVSS
R
VDD
VSS
20 ns 20 ns
CLOCK90%50%10%
50% DUTY CYCLE
20 ns
CLOCK
ttPLH
90%50%10%
tTLH tT
Q
Figure 3. Timing Diagram
CLOCK
RESET
Q1
Q4
Q5
Q6
Q7
Q8
Q9
Q10
Q11Q12
Q13
Q14
819240961 2 4 8 16 32 64 128 256 512 1024 2048
The MC14022B is a four–stage Johnson octal counter with built–in
code converter. High–speed operation and spike–free outputs areobtained by use of a Johnson octal counter design The eight decoded
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 98/449
obtained by use of a Johnson octal counter design. The eight decodedoutputs are normally low, and go high only at their appropriate octaltime period. The output changes occur on the positive–going edge of the clock pulse. This part can be used in frequency divisionapplications as well as octal counter or octal decode displayapplications.
• Fully Static Operation
• DC Clock Input Circuit Allows Slow Rise Times• Carry Out Output for Cascading• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Pin–for–Pin Replacement for CD4022B• Triple Diode Protection on All Inputs
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
1. Maximum Ratings are those values beyond which damage to the devicemay occur.
2. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
li ti f lt hi h th i t d lt t thi
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14022BCP PDIP–
MC14022BD SOIC–
MC14022BDR2 SOIC–
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
MC14022B
PIN ASSIGNMENT
13
14
15
16
11
125
4
3
2
1
6
Cout
CE
C
R
VDD
Q4
Q5
Q2
Q0
Q1
NC
Q6
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 99/449
LOGIC DIAGRAM
11 1 5 7Q4 Q1 Q6 Q3
12
14
13
CLOCK
CLOCK
ENABLE
RESET15
VSS
VDD
CARRY
CC
DR
Q
Q
CC
DR
Q
Q
CC
DR
Q
Q
CC
DR
Q
Q
BLOCK DIAGRAM FUNCTIONAL TRUTH TAB
(Positive Logic)
Clock
Clock Enable Reset Out
0 X 0
X 1 0
0 0 n
X 0
1 0 nX 0
X X 1 Q
X = Don’t Care. If n < 4 Carry = 1
Otherwise = 0.
1210
5
411
73
12
Cout
Q7
Q6
Q5Q4
Q3Q2
Q1Q0
14
13
15
CLOCK
CLOCK
ENABLE
RESET
VDD = PIN 16
VSS = PIN 8
NC = PIN 6, 9
9
10
11
8
7
6
NC
Q7
Q4
VSS
Q3
NC
NC = NO CONNECTION
MC14022B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
4.95
9.95
—
—
4.95
9.95
5.0
10
—
—
4
9
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 100/449
Vin 0 or VDD 10
15
9.95
14.95
—
9.95
14.95
10
15
—
9
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)(VO = 1.5 or 13.5 Vdc)
VIH
5.0
1015
3.5
7.011
—
— —
3.5
7.011
2.75
5.508.25
—
— —
3
7
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
–
–
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0
0
2
Input Current Iin 15 — ± 0.1 — ± 0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (4.) (5.)
(Dynamic plus Quiescent,
Per Package)(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.28 µA/kHz)f + IDD
IT = (0.56 µA/kHz)f + IDD
IT = (0.85 µA/kHz)f + IDD
3. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe4. The formulas given are for the typical characteristics only at 25 C.5. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.00125.
MC14022B
SWITCHING CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (7.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH
, tTHL
= (0.55 ns/pF) CL
+ 9.5 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
Reset to Decode Output
tPLH,
t
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 101/449
Reset to Decode Output
tPLH, tPHL = (1.7 ns/pF) CL + 415 ns
tPLH, tPHL = (0.66 ns/pF) CL + 197 ns
tPLH, tPHL = (0.5 ns/pF) CL + 150 ns
tPHL
5.0
10
15
—
—
—
500
230
175
Propagation Delay Time
Clock to Cout
tPLH, tPHL = (1.7 ns/pF) CL + 315 ns
tPLH, tPHL = (0.66 ns/pF) CL + 142 ns
tPLH, tPHL = (0.5 ns/pF) CL + 100 ns
tPLH,
tPHL
5.0
10
15
—
—
—
400
175
125
Propagation Delay Time
Clock to Decode Output
tPLH, tPHL = (1.7 ns/pF) CL + 415 ns
tPLH, tPHL = (0.66 ns/pF) CL + 197 ns
tPLH, tPHL = (0.5 ns/pF) CL + 150 ns
tPLH,
tPHL
5.0
10
15
—
—
—
275
125
95
Turn–Off Delay Time
Reset to Cout
tPLH = (1.7 ns/pF) CL + 315 ns
tPLH = (0.66 ns/pF) CL + 142 ns
tPLH = (0.5 ns/pF) CL + 100 ns
tPLH
5.0
10
15
—
—
—
400
175
125
Clock Pulse Width tWH 5.0
10
15
250
100
75
125
50
35
Clock Frequency fcl 5.0
10
15
—
—
—
5.0
12
16
Reset Pulse Width tWH 5.0
10
15
500
250
190
250
125
95
Reset Removal Time trem 5.0
10
15
750
275
210
375
135
105
Clock Input Rise and Fall Time tTLH, tTHL 5.0
10
15
No Limit
Clock Enable Setup Time tsu 5.0
10
15
350
150
115
175
75
52
Clock Enable Removal Time trem 5.0
10
15
420
200
140
260
100
70
MC14022B
VDD
VSS
VDD
VSS
A
BS1
Q6Q5Q4
Q3Q2
Q1
Q0CLOCK
ENABLE
RESET
Vout
ID
Output
Sink Drive S
Outputs
Cl
(S1 to A)
Carry Clock to Q5thru Q7
(S1 to B)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 102/449
Figure 1. Typical Output Source and Output Sink Characteristics Test Circui
VSS
Cout
Q7CLOCK
EXTERNAL
POWER
SUPPLY
( )
VGS = VDD
VDS = Vout
Figure 2. Typical Power Dissipation Test Circuit
VDD
VSS
Cout
Q7
Q6
Q5
Q4Q3
Q2
Q1
Q0
CLOCK
CLOCK
ENABLE
RESET
ID
PULSE
GENERATOR
500 µF0.01 µF
CERAMIC
fc
CL CL CL CL CL CL
APPLICATIONS INFORMATION
Figure 3 shows a technique for extending the number of decoded output states for the MC14022Bsequential within each stage and from stage to stage, with no dead time (except propagation delay).
RC
CE MC14022B
RC
CE MC14022B
RC
CE MC14022B
MC14022B
CLOCK
CLOCK
ENABLE
RESET
Q0
WH tWL
trem
tPHL
trel tsu 20 ns20 ns
20 ns 20 ns
tPLH
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 103/449
Figure 4. AC Measurement Definition and Functional Waveforms
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Cout
tPLH
tPLH
tPLH
tPLH
tPLH
tTLHtPLH
tPLH
tPHL
tPHL
tPHL
tPHL
tPHL
tPHL
tTHLtPHL
tPHL
tTLH
tPHL
tTHL
50%
90% 50%10%
tTLH
tTLH
tTLH
tTLH
tT
tT
The MC14024B is a 7–stage ripple counter with short propagation
delays and high maximum clock rates. The Reset input has standardnoise immunity, however the Clock input has increased noisei it d t H t i Th t t f h t t i
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 104/449
immunity due to Hysteresis. The output of each counter stage isbuffered.
• Diode Protection on All Inputs• Output Transitions Occur on the Falling Edge of the Clock Pulse• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Pin–for–Pin Replacement for CD4024B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin
and Vout
should be constrained
to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either VSS or VDD). Unused outputs must be left open.
http://onsem
A = Assemb
WL or L = Wafer L
YY or Y = Year
WW or W = Work W
Device Packag
ORDERING INF
MC14024BCP PDIP–
MC14024BD SOIC–
MC14024BDR2 SOIC–
MC14024BF SOEIAJ–
PDIP–14
P SUFFIX
CASE 64
SOIC–14
D SUFFIX
CASE 751
SOEIAJ–1
F SUFFIX
CASE 96
MC14024BFEL SOEIAJ–
1. For ordering information oth SOIC k l
MC14024B
TRUTH TABLE
Clock Reset State
0 0 No Change
0 1 All Outputs Low
1 0 No Change
1 1 All Outputs Low
0 No Change
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 105/449
1 All Outputs Low
0 Advance One Count
1 All Outputs Low
11
12
13
14
8
9
105
4
3
2
1
7
6
NC
Q2
Q1
NC
VDD
NC
Q3
Q6
Q7
RESET
CLOCK
VSS
Q4
Q5
PIN ASSIGNMENT
VDD = PIN 14
VSS = PIN 7
NC = NO CONNECTION
LOGIC DIAGRAM
CLOCK
RESET2
1
12
Q1
11
Q2
4
Q6
3
Q7
C Q
R Q
C Q
R Q
C Q
R Q
C Q
R Q
MC14024B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 or VDD “1” Level VOH 5.0
10
15
4.95
9.95
14 95
—
—
—
4.95
9.95
14 95
5.0
10
15
—
—
—
4.9
9.9
14
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 106/449
15 14.95 14.95 15 14.
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH 5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3.
7.
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0.
2.
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, allbuffers switching)
IT 5.0
10
15
IT = (0.31 µA/kHz) f + IDD
IT = (0.60 µA/kHz) f + IDD
IT = (1.89 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
MC14024B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay TimeClock to Q1
tPLH, tPHL = (1.7 ns/pF) CL + 295 ns
tPLH,tPHL
5.0 — 380
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 107/449
tPLH, tPHL = (0.66 ns/pF) CL + 117 ns
tPLH, tPHL = (0.5 ns/pF) CL + 85 ns
Clock to Q7
tPLH, tPHL = (1.7 ns/pF) CL + 915 ns
tPLH, tPHL = (0.66 ns/pF) CL + 367 ns
tPLH, tPHL = (0.5 ns/pF) CL + 275 ns
Reset to Qn
tPLH, tPHL = (1.7 ns/pF) CL + 415 ns
tPLH, tPHL = (0.66 ns/pF) CL + 217 ns
tPLH, tPHL = (0.5 ns/pF) CL + 155 ns
10
15
5.0
10
15
5.0
10
15
—
—
—
—
—
—
—
—
150
110
1000
400
300
500
250
180
Clock Pulse Width tWH 5.0
10
15
500
165
125
200
60
40
Reset Pulse Width tWH 5.0
10
15
600
350
260
375
200
150
Reset Removal Time trem 5.0
10
15
625
190
145
250
75
50
Clock Input Rise and Fall Time tTLH, tTHL 5.0
10
15
—
—
—
—
—
—
Input Pulse Frequency fcl 5.0
10
15
—
—
—
2.5
8.0
12
7. The formulas given are for the typical characteristics only at 25 C.
8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14024B
EXTERNALPOWER
SUPPLY
EXTEPOW
SUP
VDD
VDD
VSS
IOH
VOL = Vout
C
R
Qn
COUNT Qn TO A
LOGIC “1” LEVEL.
VDD VOH
VSS
C
R
Qn
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 108/449
Figure 1. Typical Output Source
Characteristics Test Circuit
Figure 2. Typical O
Characteristics Te
Figure 3. Power Dissipation Test Circuit
VDD
500 µF0.01 µF
CERAMIC
PULSE
GENERATOR
fC
R Q7
Q6
Q5Q4
Q3
Q2
Q1
VSS
ID
CL
CL
CL
CL
CL
CL
CL
MC14024B
5 0 %
1 0 %
%
t T H L
t R 1
t R 2
t R 3
t R 4
t R 5
t R 6
t R 7
V D D
2 5 5
V S S
V D D
V S S
V O H
V O H
V O H
V O H
V O H
V O H
V O H
V O L
V O L
V O L
V O L
V O L
V O L
V O L
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 109/449
t W L
t W H
t r e m
t P L H 1
t T L H
t T L H
t T L H
t T L H
t T L H
t T L H
t P H L 1
t P L H 2
t P H L 2
t P H L 3
t P H L 4
t P H L 5
t P H L 6
t P H L 7
t P L H
3
t P L H 4
t P L H 5
t P L H 6
t P L H 7
5 0 %
5 0 %
5 0 %
5 0 %
5 0 %
5 0 %
5 0 %
9 0 %
9 0 %
1 0 %
1 0 %
1
9 0 %
t T H L
t T H L
t T H L
t T H L
t T H L
1
2
4
8
1 6
3 2
6 4
1 2 8
The MC14027B dual J–K flip–flop has independent J, K, Clock (C),
Set (S) and Reset (R) inputs for each flip–flop. These devices may beused in control, register, or toggle functions.
• Diode Protection on All Inputs
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 110/449
Diode Protection on All Inputs• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Logic Swing Independent of Fanout• Logic Edge–Clocked Flip–Flop Design —
Logic state is retained indefinitely with clock level either high or low;information is transferred to the output only on the positive–going
edge of the clock pulse• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Pin–for–Pin Replacement for CD4027B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125°C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoidapplications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
http://onsem
A = Assem
WL or L = WaferYY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14027BCP PDIP–
MC14027BD SOIC–
MC14027BDR2 SOIC–
PDIP–16P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14027BF SOEIAJ
MC14027B
TRUTH TABLE
Inputs Outputs*
C† J K S R Qn‡ Qn+1 Qn+1
1 X 0 0 0 1 0
X 0 0 0 1 1 0
0 X 0 0 0 0 1
X 1 0 0 1 0 1
1 1 0 0 Qo Qo Qo
X X 0 0 X Qn Qn
No
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 111/449
X X 0 0 X Qn Qn
X X X 1 0 X 1 0
X X X 0 1 X 0 1
X X X 1 1 X 1 1
X = Don’t Care ‡ = Present State† = Level Change * = Next State
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
RB
CB
QB
QB
VDD
SB
JB
KB
RA
CA
QA
QA
VSS
SA
JA
KA
PIN ASSIGNMENT
BLOCK DIAGRAM
10
9
4
5
3
6
7
15
2
1
S
S
R
J
K
C
J Q
Q
Q
Chang
MC14027B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 or VDD “1” Level VOH 5.010
15
4.959.95
14.95
— —
—
4.959.95
14.95
5.010
15
— —
—
4.9.
14
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 112/449
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH 5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 —±
0.1 —±
0.00001±
0.1 —Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
1.0
2.0
4.0
—
—
—
0.002
0.004
0.006
1.0
2.0
4.0
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, allbuffers switching)
IT 5.0
10
15
IT = (0.8 µA/kHz) f + IDD
IT = (1.6 µA/kHz) f + IDD
IT = (2.4 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
MC14027B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 12.5 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Times**Clock to Q, Q
tPLH, tPHL = (1.7 ns/pF) CL + 90 ns
tPLH, tPHL = (0.66 ns/pF) CL + 42 ns
tPLH,tPHL
5.0
10
—
—
175
75
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 113/449
PLH PHL L
tPLH, tPHL = (0.5 ns/pF) CL + 25 ns 15 — 50
Set to Q, Q
tPLH, tPHL = (1.7 ns/pF) CL + 90 ns
tPLH, tPHL = (0.66 ns/pF) CL + 42 ns
tPLH, tPHL = (0.5 ns/pF) CL + 25 ns
5.0
10
15
—
—
—
175
75
50
Reset to Q, Q
tPLH, tPHL = (1.7 ns/pF) CL + 265 ns
tPLH, tPHL = (0.66 ns/pF) CL + 67 ns
tPLH, tPHL = (0.5 ns/pF) CL + 50 ns
5.0
10
15
—
—
—
350
100
75
Setup Times tsu 5.0
10
15
140
50
35
70
25
17
Hold Times th 5.0
10
15
140
50
35
70
25
17
Clock Pulse Width tWH, tWL 5.0
10
15
330
110
75
165
55
38
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
3.0
9.0
13
Clock Pulse Rise and Fall Time tTLH, tTHL 5.0
10
15
—
—
—
—
—
—
Removal Times
Set
trem
5
10
15
90
45
35
10
5
3
Reset
5
10
15
50
25
20
– 30
– 15
– 10
Set and Reset Pulse Width tWH 5.0
10
15
250
100
70
125
50
357. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14027B
20 ns 20 nsVDD
VSS
VDD
VSS
VDD
VSS
90%50%
10%
20 ns 20 ns
tsu
90%50%
10%tsu th
20 ns 20 ns90%
50%10%
C
K
J
20 ns 20 ns
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 114/449
Figure 1. Dynamic Signal Waveforms
(J, K, Clock, and Output)
Figure 2. Dynamic Sig
(Set, Reset, Clock,
VOH
VOL
tWLtWH1
fcltPLH tPHL
90%50%10%
tTLH
tTHL
Q
Inputs R and S low.
For the measurement of tWH, I/fcl, and PD
the Inputs J and K are kept high.
90%50%
10%ttw
20 ns90%
50%
twtPLH
tPHL
50%Q or Q
CLOCK
SET OR
RESET
LOGIC DIAGRAM
(1/2 of Device Shown)
S
J
K
R
C C
C
C
C
C
C
C
C
C
C
The MC14028B decoder is constructed so that an 8421 BCD codeon the four inputs provides a decimal (one–of–ten) decoded output,while a 3–bit binary input provides a decoded octal (one–of–eight)
htt //
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 115/449
code output with D forced to a logic “0”. Expanded decoding such asbinary–to–hexadecimal (one–of–16), etc., can be achieved by usingother MC14028B devices. The part is useful for code conversion,address decoding, memory selection control, demultiplexing, orreadout decoding.
• Diode Protection on All Inputs• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Positive Logic Design• Low Outputs on All Illegal Input Combinations• Similar to CD4028B.
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the device
may occur.3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields However precautions must be taken to avoid
http://onsem
A = Assem
WL or L = WaferYY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14028BCP PDIP–
MC14028BD SOIC–
MC14028BDR2 SOIC–
PDIP–16P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14028BF SOEIAJ
MC14028B
PIN ASSIGNMENT
13
14
15
16
10
11125
4
3
2
1
7
6C
B
Q1
Q3
VDD
A
D
Q7
Q0
Q2
Q4
Q6
Q5Q9
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 116/449
98 Q8VSS
TRUTH TABLED C B A Q9 Q8 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0
0 0 0 0 0 0 0 0 0 0 0 0 0 1
0 0 0 1 0 0 0 0 0 0 0 0 1 0
0 0 1 0 0 0 0 0 0 0 0 1 0 0
0 0 1 1 0 0 0 0 0 0 1 0 0 0
0 1 0 0 0 0 0 0 0 1 0 0 0 0
0 1 0 1 0 0 0 0 1 0 0 0 0 0
0 1 1 0 0 0 0 1 0 0 0 0 0 0
0 1 1 1 0 0 1 0 0 0 0 0 0 0
1 0 0 0 0 1 0 0 0 0 0 0 0 01 0 0 1 1 0 0 0 0 0 0 0 0 0
1 0 1 0 0 0 0 0 0 0 0 0 0 0
1 0 1 1 0 0 0 0 0 0 0 0 0 0
1 1 0 0 0 0 0 0 0 0 0 0 0 0
1 1 0 1 0 0 0 0 0 0 0 0 0 0
1 1 1 0 0 0 0 0 0 0 0 0 0 0
1 1 1 1 0 0 0 0 0 0 0 0 0 0
BLOCK DIAGRAM
8421
BCD
INPUTS
DECIMALDECODED
OUTPUTS
OCTAL
DECODEDOUTPUTS
3
14
2
15
16
7
4
A
B
C
Q7
Q6
Q5Q4
Q3
Q2
Q1
Q0
3–BIT
BINARY
INPUTS
10
13
12
MC14028B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0 VOL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” LevelVin = 0 or VDD VOH
5.010
15
4.959.95
14.95
— —
—
4.959.95
14.95
5.010
15
— —
—
4.9.
14
Input Voltage “0” Level
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 117/449
p g
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO
= 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.3 µA/kHz) f + IDD
IT = (0.6 µA/kHz) f + IDD
IT
= (0.9 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH tTHL = (1 5 ns/pF) CL + 25 ns
tTLH,
tTHL 5 0 — 100
MC14028B
Inputs B, C, and D
switching in respect
to a BCD code.
All outpu
to respec
f in respe
clock.
20 ns 20 ns
90%50%
10%
1/f
VDD
VSS
20 ns 20 ns
INPUT A
INPUT C
10%
90%50%
VDD
VSS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 118/449
Figure 1. Dynamic Signal Waveforms
Inputs A, B, and D low.
Q4
VOH
VOL
tPLH tPHL
tTLH tTHL
50%90%
10%
LOGIC DIAGRAM
Q9
Q8
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
D
C
B
A
MC14028B
APPLICATIONS INFORMATION
Expanded decoding can be performed by using theMC14028B and other CMOS Integrated Circuits. Thecircuit in Figure 2 converts any 4–bit code to a decimal orhexadecimal code. The accompanying table shows the inputbinary combinations, the associated “output numbers” that
go “high” when selected, and the “redefined outputnumbers” needed for the proper code. For example: For thecombination DCBA = 0111 the output number 7 is redefinedfor the 4–bit binary, 4–bit gray, excess–3, or excess–3 gray
d 7 5 4 2 i l Fi 3 h 6 bi
D
MC14028B
D C B A D
Q9 Q0 Q9
15 – 8
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 119/449
codes as 7, 5, 4, or 2, respectively. Figure 3 shows a 6–bitbinary 1–of–64 decoder using nine MC14028B circuits andtwo MC14069UB inverters.
The MC14028B can be used in decimal digit displays,such as, neon readouts or incandescent projection indicators
as shown in Figure 4.
Figure 2. Code Conversion Circ
OUTPUT NUMBER
Cod
O
Hexade
Inputs Output Numbers
D C B A 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0
0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 1 1
0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 2 3
0 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 3 2
0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 4 7
0 1 0 1 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 5 6
0 1 1 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 6 4
0 1 1 1 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 7 5
1 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 8 151 0 0 1 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 9 14
1 0 1 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 10 12
1 0 1 1 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 11 13
1 1 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 12 8
1 1 0 1 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 13 9
1 1 1 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 14 11
1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 15 10
4 –
B i t
B i n a r y
4 –
B i t
G r a y
MC14028B
INPUTS
A B C D E F INHIBIT(NO SELECTION)
A B C – D
Q0 Q9MC14028B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 120/449
Figure 3. Six–Bit Binary 1–of–64 Decoder
A B C DMC14028B
Q0 Q9
A B C DMC14028B
Q0 Q9
A B C DMC14028B
Q0 Q9
A B C DMC14028B
Q0 Q9
A B C DMC14028B
Q0 Q9
A B C DMC14028B
Q0 Q9
A B C DMC14028B
Q0 Q9
A
Q
70 8 15 16 23 24 31 32 39 40 47 48 55 56
*1/6 MC14069UB 64 OUTPUTS (SELECTED OUTPUT IS HIGH)
Figure 4. Decimal Digit Display Application
A
Q9
MC14028B
B
C
DQ8Q7Q6Q5Q4Q3Q2Q1Q0
90
29 1
APPROPRIATE
VOLTAGE
NEONDISPLAY
APPRO
VOL
OR
The MC14029B Binary/Decade up/down counter is constructedwith MOS P–channel and N–channel enhancement mode devices in asingle monolithic structure. The counter consists of type D flip–flopstages with a gating structure to provide toggle flip–flop capability. http://onsem
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 121/449
g g g p gg p p p yThe counter can be used in either Binary or BCD operation. Thiscomplementary MOS counter finds primary use in up/down anddifference counting and frequency synthesizer applications where lowpower dissipation and/or high noise immunity is desired. It is alsouseful in A/D and D/A conversion and for magnitude and signgeneration.
• Diode Protection on All Inputs• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Internally Synchronous for High Speed• Logic Edge–Clocked Design — Count Occurs on Positive Going
Edge of Clock• Asynchronous Preset Enable Operation•
Capable of Driving Two Low–power TTL Loads or One Low–powerSchottky TTL Load Over the Rated Temperature Range• Pin for Pin Replacement for CD4029B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg
Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the device
A = Assem
WL or L = WaferYY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14029BCP PDIP–
MC14029BD SOIC–
MC14029BDR2 SOIC–
PDIP–16P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14029BF SOEIAJ
MC14029B
TRUTH TABLE
Carry In Up/Down
Preset
Enable Action
1 X 0 No Count
0 1 0 Count Up
0 0 0 Count Down
X X 1 Preset
X = Don’t Care
1
1
1
1
15
4
3
2
1
8
7
6
P0
P3
Q3
PE
VSS
Cout
Q0
Cin
PIN ASSIGN
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 122/449
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)(VO = 13.5 or 1.5 Vdc)
VIL
5.0
1015
—
— —
1.5
3.04.0
—
— —
2.25
4.506.75
1.5
3.04.0
—
— —
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
1015
—
— —
5.0
1020
—
— —
0.005
0.0100.015
5.0
1020
—
— —
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
P P k )
IT 5.0
10
15
IT = (0.58 µA/kHz) f + IDD
IT = (1.20 µA/kHz) f + IDD
I (1 70 A/kH ) f I
MC14029B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
All Types
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
Clk to Q
tPLH, tPHL = (1.7 ns/pF) CL + 230 ns
tPLH, tPHL = (0.66 ns/pF) CL + 97 ns
t t (0 5 / F) C 75
tPLH,
tPHL
5.0
10
15
—
—
200
100
90
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 123/449
tPLH, tPHL = (0.5 ns/pF) CL + 75 ns 15 — 90
Clk to Cout
tPLH, tPHL = (1.7 ns/pF) CL + 230 ns
tPLH, tPHL = (0.66 ns/pF) CL + 97 ns
tPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPLH,
tPHL 5.0
10
15
—
—
—
250
130
85
Cin to Cout
tPLH, tPHL = (1.7 ns/pF) CL + 95 ns
tPLH, tPHL = (0.66 ns/pF) CL + 47 ns
tPLH, tPHL = (0.5 ns/pF) CL + 35 ns
tPLH,
tPHL 5.0
10
15
—
—
—
175
50
50
PE to Q
tPLH, tPHL = (1.7 ns/pF) CL + 230 ns
tPLH, tPHL = (0.66 ns/pF) CL + 97 ns
tPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPLH,
tPHL 5.0
10
15
—
—
—
235
100
80
PE to Cout
tPLH, tPHL = (1. 7 ns/pF) CL + 465 nstPLH, tPHL = (0.66 ns/pF) CL + 192 ns
tPLH, tPHL = (0.5 ns/pF) CL + 125 ns
tPLH,
tPHL 5.010
15
— —
—
320145
105
Clock Pulse Width tW(cl) 5.0
10
15
180
80
60
90
40
30
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
4.0
8.0
10
Preset Removal TimeThe Preset Signal must be low prior to a positive–going
transition of the clock.
trem 5.010
15
16080
60
8040
30
Clock Rise and Fall Time tr(cl)
tf(cl)
5.0
10
1 5
—
—
—
—
—
—
Carry In Setup Time tsu 5.0
10
15
150
60
40
75
30
20
Up/Down Setup Time 5.010
15
340140
100
17070
50
Binary/Decade Setup Time 5.0
10
320
140
160
70
MC14029B
VDD
ID500 pF 0.01 µF
CERAMIC
PULSE
GENERATOR
PE
CinB/DU/D
CLKP0P1P2
P3 Cout
Q3
Q2
Q1
Q0
C
CL
CL
CL
CL
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 124/449
Figure 1. Power Dissipation Test Circuit and Waveform
CL
VDD
VSS
20 ns 20 ns
CLK 50% 90%10%
VARIABLEWIDTH
PROGRAMMABLE
PULSE
GENERATOR
VDD
PECinB/DU/DCLK
P0P1P2
P3 Cout
Q3
Q2
Q1
Q0
CL
VSS
CL
CL
CL
tWtsu trem
1/fcl
50%
50%
tW
Cout ONLY tTLH
90% 90%
20 ns
CARRY IN OR
UP/DOWN
OR BINARY/DECADE
CLOCK
PRESET ENABLE
Q0 OR CARRY OUT
VDD
VSSVDD
VSS
VDD
VSS
VOH
MC14029B
TIMING DIAGRAM
CLOCK
CARRY IN
UP/DOWN
BINARY/DECADEPE
P0
P1
P2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 125/449
P3
Q0
Q1
Q2Q3
CARRY OUT
COUNT 0 1 2 3 4 5 6 7 8 9 8 7 6 5 4 3 2 1 0 0 9 6
Q3 Q2 Q1 Q0
P3 P2 P1 P0 CLK
CoutU/DB/D
Q3 Q2 Q1 Q0
P3 P2 P1 P0 CLK
CoutU/DB/D
Q3 Q2 Q1 Q0
P3 P2 P1 P0 CLK
CoutU/DB/D
Cin
PE
Cin
PE
Cin
PE
MC14029B
MSDMC14029B
MC14029B
LSD
INPUTCLOCK
“1” “2” “3”VDD VDDVDD VDD
CLOCK
Cout 1 (LSD)
Cout 2
Cout 3 (MSD)
MC14029B
LOGIC DIAGRAM
Q 3
7
C A R R Y O U T
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 126/449
4
P 0
1 2
P 1
1 3
P 2
3
P 3
2
Q
1 4
Q 2
1
Q 1
6
Q 0
P E
T E
C L K
P 3
Q 3
Q 3
P E
T E
C L K
P 2
Q 2
Q 2
P E
T E
C L K
P 1
Q 1
Q 1
P E T E C L K
P 0
Q 0
Q 0
The MC14040B 12–stage binary counter is constructed with MOSP–channel and N–channel enhancement mode devices in a singlemonolithic structure. This part is designed with an input wave shapingcircuit and 12 stages of ripple–carry binary counter. The deviceadvances the count on the negative–going edge of the clock pulse.Applications include time delay circuits, counter controls, andf d i i i it
http://onsem
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 127/449
frequency–driving circuits.
• Fully Static Operation• Diode Protection on All Inputs• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Capable of Driving Two Low–power TTL Loads or One Low–powerSchottky TTL Load Over the Rated Temperature Range
• Common Reset Line• Pin–for–Pin Replacement for CD4040B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to highstatic voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14040BCP PDIP–
MC14040BD SOIC–
C C
PDIP–16
P SUFFICASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
TSSOP–
DT SUFF
CASE 94
MC14040B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q9
Q8
Q10
Q11
VDD
Q1
C
R
Q7
Q5
Q6
Q12
VSS
Q2
Q3
Q4
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 128/449
TRUTH TABLE
Clock Reset Output State
0 No Change
0 Advance to next state
X 1 All Outputs are low
X = Don’t Care
LOGIC DIAGRAM
CLOCK10
RESET11
Q1 Q2 Q3 Q109 7 6 14
Q4 = PIN 5
Q5 = PIN 3
Q6 = PIN 2
Q7 = PIN 4
Q8 = PIN 13
Q9 = PIN 12
VDD = PIN 16
VSS = PIN 8
C Q
RC Q
C Q
RC Q
C Q
RC Q
C Q
RC Q
C
RC
98 Q1VSS
MC14040B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” LevelVin = 0 or VDD
VOH 5.010
15
4.959.95
14.95
— —
—
4.959.95
14.95
5.010
15
— —
—
4.9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9 0 or 1 0 Vdc)
VIL
5.0
10
—
—
1.5
3 0
—
—
2.25
4 50
1.5
3 0
—
—
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 129/449
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
10
15
—
3.0
4.0
—
4.50
6.75
3.0
4.0
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, allbuffers switching)
IT 5.0
10
15
IT = (0.42 µA/kHz) f + IDD
IT = (0.85 µA/kHz) f + IDD
IT = (1.43 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
MC14040B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise and Fall Time
TTLH, TTHL = (1.5 ns/pF) CL + 25 ns
TTLH, TTHL = (0.75 ns/pF) CL + 12.5 ns
TTLH, TTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay TimeClock to Q1
tPHL, tPLH = (1.7 ns/pF) CL + 315 ns
tPHL, tPLH = (0.66 ns/pF) CL + 137 ns
tPHL, tPLH = (0.5 ns/pF) CL + 95 ns
tPLH,tPHL
5.0
10
15
—
—
—
260
115
80
Clock to Q12
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 130/449
Clock to Q12
tPHL, tPLH = (1.7 ns/pF) CL + 2415 ns
tPHL, tPLH = (0.66 ns/pF) CL + 867 ns
tPHL, tPLH = (0.5 ns/pF) CL + 475 ns
5.0
10
15
—
—
—
1625
720
500
Propagation Delay Time
Reset to Qn
tPHL = (1.7 ns/pF) CL + 485 ns
tPHL = (0.86 ns/pF) CL + 182 ns
tPHL = (0.5 ns/pF) CL + 145 ns
tPHL
5.0
10
15
—
—
—
370
155
115
Clock Pulse Width tWH 5.0
10
15
385
150
115
140
55
38
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
2.1
7.0
10.0Clock Rise and Fall Time tTLH, tTHL 5.0
10
15
No Limit
Reset Pulse Width tWH 5.0
10
15
960
360
270
320
120
80
Reset Removal Time trem 5.0
10
15
130
50
30
65
25
15
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
PULSEGENERATOR
PULSE
GENERATOR500 µF
0.01 µF
CERAMIC
VDD
CL
CL
C
ID
Q1Q2
Qn
C
R
VDD
V
Q1
Q2
Qn
C
R
MC14040B
CLOCK
RESET
Q1
Q2
Q3
Q4
Q5
Q6
Q7
1 2 4 8 16 32 64 128 256 512 1024 204
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 131/449
Figure 3. Timing Diagram
Q7
Q8
Q9
Q10
Q11
Q12
APPLICATIONS INFORMATION
TIME–BASE GENERATOR
A 60 Hz sinewave obtained through a 1.0 Megohmresistor connected directly to a standard 120 Vac power lineis applied to the clock input of the MC14040B. By selecting
outputs Q5, Q10, Q11, and Q12 accomplished. The MC14012B doutputs, produces a single output pulsecounter. The resulting output frequen
VDD
VSS
120 Vac
60 Hz
1.0 M
≥ 20 pF
MC14040BC
R Q12
Q11
Q10
Q5
1/2
MC14012B
1/2
MC14012B
1.0 P
The MC14042B Quad Transparent Latch is constructed with MOSP–channel and N–channel enhancement mode devices in a singlemonolithic structure. Each latch has a separate data input, but all fourlatches share a common clock. The clock polarity (high or low) used tostrobe data through the latches can be reversed using the polarityinput. Information present at the data input is transferred to outputs Qand Q during the clock level which is determined by the polarity input.
http://onsem
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 132/449
When the polarity input is in the logic “0” state, data is transferredduring the low clock level, and when the polarity input is in the logic“1” state the transfer occurs during the high clock level.
• Buffered Data Inputs• Common Clock• Clock Polarity Control• Q and Q Outputs• Double Diode Input Protection• Supply Voltage Range = 3.0 Vdc to 1 8 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14042BCP PDIP–
MC14042BD SOIC–
MC14042BDR2 SOIC–
PDIP–16
P SUFFICASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14042BF SOEIAJ–
MC14042BFEL SOEIAJ–
MC14042B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q2
D2
D3
Q3
VDD
Q1
Q1
Q2
D0
Q0
Q0
Q3
VSS
D1
POLARITY
CLOCK
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 133/449
TRUTH TABLE
Clock Polarity Q
0 0 Data
1 0 Latch
1 1 Data
0 1 Latch
LOGIC DIAGRAM
CLOCK
POLARITY
VDD = PIN 16
VSS = PIN 8
5
6
4
7
13
14D3
D2
D1
D0 LATCH
1
LATCH
2
LATCH
3
LATCH
4
Q2
Q3
Q3
Q2
Q1
Q1
Q0
Q0
12
2
3
10
9
11
1
15
MC14042B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” LevelVin = 0 or VDDVOH 5.010
15
4.959.95
14.95
— —
—
4.959.95
14.95
5.010
15
— —
—
4.9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(V 13 5 or 1 5 Vdc)
VIL
5.0
10
15
—
—
1.5
3.0
4 0
—
—
2.25
4.50
6 75
1.5
3.0
4 0
—
—
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 134/449
(VO = 13.5 or 1.5 Vdc) 15 — 4.0 — 6.75 4.0 —
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
1.0
2.0
4.0
—
—
—
0.002
0.004
0.006
1.0
2.0
4.0
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs allbuffers switching)
IT 5.0
10
15
IT = (1.0 µA/kHz) f + IDD
IT = (2.0 µA/kHz) f + IDD
IT = (3.0 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004.
MC14042B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time, D to Q, Q
tPLH, tPHL = (1.7 ns/pF) CL + 135 nstPLH, tPHL = (0.66 ns/pF) CL + 57 ns
tPLH, tPHL = (0.5 ns/pF) CL + 35 ns
tPLH,
tPHL 5.010
15
— —
—
22090
60
Propagation Delay Time, Clock to Q, Q
tPLH, tPHL = (1.7 ns/pF) CL + 135 ns
tPLH, tPHL = (0.66 ns/pF) CL + 57 ns
( / F) C
tPLH,
tPHL 5.0
10
—
—
220
90
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 135/449
tPLH, tPHL = (0.5 ns/pF) CL + 35 ns 15 — 60
Clock Pulse Width tWH
5.0
10
15
300
100
80
150
50
40
Clock Pulse Rise and Fall Time tTLH,
tTHL 5.0
10
15
—
—
—
—
—
—
Hold Time th5.0
10
15
100
50
40
50
25
20
Setup Time tsu
5.0
10
15
50
30
25
0
0
0
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
VDD
VSS
PULSE
GENERATOR 1
16
5
6
4
7
13
14
CLOCK
POLARITY
D0
D1
D2
D3 Q3
Q3
Q2
Q2
Q1
Q1
Q0
Q0
15
1
12
11
9
10
3
2
8For Power Dissipation test, each output
1f
20 ns
DATA INPUT
Q OUTPUT
Q OUTPUT
tPLH
tTLH
tTHL
90%50%
90%
10%
90%
10%50%
tPHL
MC14042B
NOTE: CL connected to output under test.
PULSE
GENERATOR 1
PULSE
GENERATOR 2
VDD
16
5
6
4
7
13
14
CLOCK
POLARITY
D0
D1
D2
D3 Q3
Q3
Q2Q2
Q1
Q1
Q0
Q0
VSS8
15
1
1211
9
10
3
2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 136/449
Figure 2. AC Test Circuit and Timing Diagram
(Clock to Output)
20* ns 20 ns
90%
10%
50%
tWH
20 ns
90%50%
tsu th
tPLH
90%
50%10%
CLOCK INPUT
P.G. 1
DATA INPUTP.G. 2
Q OUTPUT
*Input clock rise time is 20 ns except for maximum rise time test.
Quad R–S Latches
The MC14043B and MC14044B quad R–S latches are constructedwith MOS P–channel and N–channel enhancement mode devices in asingle monolithic structure. Each latch has an independent Q outputand set and reset inputs. The Q outputs are gated through three–statebuffers having a common enable input. The outputs are enabled with al i l “1” hi h th bl i t l i l “0” l
http://onsem
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 137/449
logical “1” or high on the enable input; a logical “0” or lowdisconnects the latch from the Q outputs, resulting in an open circuit atthe Q outputs.
• Double Diode Input Protection• Three–State Outputs with Common Enable• Outputs Capable of Driving Two Low–power TTL Loads or One
Low–Power Schottky TTL Load Over the Rated Temperature Range• Supply Voltage Range = 3.0 Vdc to 18 Vdc
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedancecircuit.For proper operation,Vin and Vout shouldbeconstrained
XX = Specific
A = Assemb
WL or L = Wafer L
YY or Y = Year
WW or W = Work W
Device Packa
ORDERING INF
MC14043BCP PDIP–
MC14043BD SOIC–
MC14043BDR2 SOIC–
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14043BF SOEIAJ
MC14043BFEL SOEIAJ
MC14044BCP PDIP
MC14043B, MC14044B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
S2
NC
S3
R3
VDD
Q1
Q2
R2
S0
R0
Q0
Q3
VSS
R1
S1
E
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
R2
Q0
R3
S3
VD
Q1
Q2
S2
R0
S0
NC
Q3
VSS
S1
R1
E
MC14043B MC14044B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 138/449
MC14043B
TRUTH TABLE
MC14044B
S R E Q
HighImpedance
X X 0
No Change
0
0
0
0
1
1
1
R3
S3
R2
S2
R1
S1
R0
S04
3
6
7
12
11
14
15
Q3
Q2
Q1
Q02
9
10
1
S3
R3
S2
R2
S1
R1
S0
R04
3
6
7
12
11
14
15
Q3
Q2
Q1
Q013
9
10
1
VDD = PIN 16
VSS = PIN 8NC = PIN 13
NC = NO CONNECTION
MC14043B, MC14044B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH
5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 139/449
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
1.0
2.0
4.0
—
—
—
0.002
0.004
0.006
1.0
2.0
4.0
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs allbuffers switching)
IT 5.0
10
15
IT = (0.58 µA/kHz) f + IDD
IT = (1.15 µA/kHz) f + IDD
IT = (1.73 µA/kHz) f + IDD
Three–State Output Leakage
Current
ITL 15 — ± 0.1 — ± 0.0001 ± 0.1 —
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004.
MC14043B, MC14044B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise Time
tTLH = (1.35 ns/pF) CL + 32.5 ns
tTLH = (0.60 ns/pF) CL + 20 ns
tTLH = (0.40 ns/pF) CL + 20 ns
tTLH
5.0
10
15
—
—
—
100
50
40
Output Fall Time
tTHL = (1.35 ns/pF) CL + 32.5 ns
tTHL = (0.60 ns/pF) CL + 20 ns
tTHL = (0.40 ns/pF) CL + 20 ns
tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
tPLH = (0.90 ns/pF) CL + 130 ns
tPLH = (0.36 ns/pF) CL + 57 ns
tPLH = (0.26 ns/pF) CL + 47 ns
tPLH
5.0
10
15
—
—
—
175
75
60
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 140/449
tPLH (0.26 ns/pF) CL + 47 ns 15 60
tPHL = (0.90 ns/pF) CL + 130 ns
tPHL = (0.90 ns/pF) CL + 57 ns
tPHL = (0.26 ns/pF) CL + 47 ns
tPHL 5.0
10
15
—
—
—
175
75
60
Set, Set Pulse Width tW 5.0
10
15
200
100
70
80
40
30
Reset, Reset Pulse Width tW 5.0
10
15
200
100
70
80
40
30
Three–State Enable/Disable Delay tPLZ,
tPHZ,
tPZL,
tPZH
5.0
10
15
—
—
—
150
80
55
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
AC WAVEFORMS
MC14043B MC14044
20 ns 20 ns
90%
10%
RESET
SET
Q
tPHL tPLH
20 ns 20 ns
50%
90%50%
10%
tTHL tTLH
90%50%
10%
VDD
VSS
VDD
VSS
VOH
VOL
RESET
SET
Q
20 ns 20 ns
90%
10%50%
20 ns
50%
tTLH
50%9
tPLH
MC14043B, MC14044B
THREE–STATE ENABLE/DISABLE DELAYS
Set, Reset, Enable, and Switch Conditions for 3–State Tests
MC14043B MC14044B
Test Enable S1 S2 Q S R S R
tPZH Open Closed A VDD VSS VSS VDD
tPZL Closed Open B VSS VDD VDD VSS
tPHZ Open Closed A VDD VSS VSS VDD
tPLZ Closed Open B VSS VDD VDD VSS
TO
OUTPUT
UNDERTEST
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 141/449
ENABLE
QA
QB
50%
tPZH
10%
tPZL
tPHZ
tPLZ
10%
90%
VDD
VSS
VDD
VOL
VOH
VSS
The MC14046B phase locked loop contains two phase comparators,a voltage–controlled oscillator (VCO), source follower, and zener
diode. The comparators have two common signal inputs, PCAin andPCBin. Input PCAin can be used directly coupled to large voltagesignals, or indirectly coupled (with a series capacitor) to small voltagesignals. The self–bias circuit adjusts small voltage signals in the linearregion of the amplifier. Phase comparator 1 (an exclusive OR gate)provides a digital error signal PC1out, and maintains 90° phase shift ath f b PCA d PCB i l (b h 50%
http://onsem
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 142/449
the center frequency between PCAin and PCBin signals (both at 50%duty cycle). Phase comparator 2 (with leading edge sensing logic)provides digital error signals, PC2out and LD, and maintains a 0°
phase shift between PCAin and PCBin signals (duty cycle isimmaterial). The linear VCO produces an output signal VCO outwhose frequency is determined by the voltage of input VCO in and thecapacitor and resistors connected to pins C1A, C1B, R1, and R2. Thesource–follower output SFout with an external resistor is used wherethe VCOin signal is needed but no loading can be tolerated. The inhibitinput Inh, when high, disables the VCO and source follower tominimize standby power consumption. The zener diode can be used toassist in power supply regulation.
Applications include FM and FSK modulation and demodulation,frequency synthesis and multiplication, frequency discrimination,tone decoding, data synchronization and conditioning,voltage–to–frequency conversion and motor speed control.
• Buffered Outputs Compatible with MHTL and Low–Power TTL• Diode Protection on All Inputs• Supply Voltage Range = 3.0 to 18 V• Pin–for–Pin Replacement for CD4046B
• Phase Comparator 1 is an Exclusive Or Gate and is Duty Cycle Limited• Phase Comparator 2 switches on Rising Edges and is not Duty Cycle
Limited
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin Input Voltage Range (All Inputs) –0.5 to VDD + 0.5 V
Iin DC Input Current, per Pin ± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14046BCP PDIP–
MC14046BDW SOIC–
MC14046BDWR2 SOIC–
1. For ordering information the SOIC packages, pleaON S i d t
PDIP–16
P SUFFI
CASE 64
SOIC–1
DW SUFF
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14046BF SOEIAJ–
MC14046BFEL SOEIAJ–
MC14046B
PIN ASSIG
5
4
3
2
1
8
7
6
VCOout
PCBin
PC1out
LD
VSS
C1B
C1A
INH
BLOCK DIAGRAM
PCAin
PCBin
VCOin
INH
14
3
9
5
VDD = PIN 16
VSS = PIN 8
2 PC1out
13 PC2out1 LD
4 VCOout
11 R112 R26 C1A7 C1B
10 SFout
15 ZENERVSS
SELF BIAS
CIRCUIT
PHASE
COMPARATOR 1
PHASE
COMPARATOR 2
VOLTAGE
CONTROLLEDOSCILLATOR
(VCO)
SOURCE FOLLOWER
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 143/449
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ Max MOutput Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4
9
14
Input Voltage . “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH 5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 1.2
– 0.25
– 0.62
– 1.8
—
—
—
—
– 1.0
– 0.2
– 0.5
– 1.5
– 1.7
– 0.36
– 0.9
– 3.5
—
—
—
—
–
– 0
– 0
–
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0
0
2
Input Current Iin 15 — ± 0.1 — ± 0.00001 ± 0.1 —
Input Capacitance Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package) Inh = PCAin = VDD,
Zener = VCOin = 0 V, PCBin = VDD
or 0 V, Iout = 0 µA
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.)
(Inh = “0”, fo = 10 kHz, CL = 50 pF,
R1 = 1.0 MΩ, R2 = RSF = ∞,
and 50% Duty Cycle)
IT 5.0
10
15
IT = (1.46 µA/kHz) f + IDD
IT = (2.91 µA/kHz) f + IDD
IT = (4.37 µA/kHz) f + IDD
MC14046B
ELECTRICAL CHARACTERISTICS (6.) (CL = 50 pF, TA = 25°C)
VMinimum
Characteristic Symbol Vdc
Device Typical
Output Rise Time
tTLH = (3.0 ns/pF) CL + 30 ns
tTLH = (1.5 ns/pF) CL + 15 ns
tTLH = (1.1 ns/pF) CL + 10 ns
tTLH
5.0
10
15
—
—
—
180
90
65
Output Fall TimetTHL = (1.5 ns/pF) CL + 25 ns
tTHL = (0.75 ns/pF) CL + 12.5 ns
tTHL = (0.55 ns/pF) CL + 9.5 ns
tTHL
5.0
10
15
—
—
—
100
50
37
PHASE COMPARATORS 1 and 2
Input Resistance — PCAin Rin 5.0
10
1.0
0.2
2.0
0.4
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 144/449
10
15
0.2
0.1
0.4
0.2
— PCBin Rin 15 150 1500
Minimum Input Sensitivity
AC Coupled — PCAin
C series = 1000 pF, f = 50 kHz
Vin 5.0
10
15
—
—
—
200
400
700
DC Coupled — PCAin, PCBin — 5 to 15 See Noise Immu
VOLTAGE CONTROLLED OSCILLATOR (VCO)
Maximum Frequency
(VCOin = VDD, C1 = 50 pF
R1 = 5.0 kΩ, and R2 = ∞)
fmax 5.0
10
15
0.5
1.0
1.4
0.7
1.4
1.9
Temperature — Frequency Stability(R2 = ∞ )
— 5.010
15
— —
—
0.120.04
0.015
Linearity (R2 = ∞ )
(VCOin = 2.5 V ± 0.3 V, R1 > 10 kΩ)
(VCOin = 5.0 V ± 2.5 V, R1 > 400 kΩ)
(VCOin = 7.5 V ± 5.0 V, R1 ≥ 1000 kΩ)
—
5.0
10
15
—
—
—
1.0
1.0
1.0
Output Duty Cycle — 5 to 15 — 50
Input Resistance — VCOin Rin 15 150 1500
SOURCE–FOLLOWER
Offset Voltage
(VCOin minus SFout, RSF > 500 kΩ)
— 5.0
10
15
—
—
—
1.65
1.65
1.65
Linearity
(VCOin = 2.5 V ± 0.3 V, RSF > 50 kΩ)
(VCOin = 5.0 V ± 2.5 V, RSF > 50 kΩ)
(VCOin = 7.5 V ± 5.0 V, RSF > 50 kΩ)
—
5.0
10
15
—
—
—
0.1
0.6
0.8
ZENER DIODE
Zener Voltage (Iz = 50 µA) VZ — 6.7 7.0
Dynamic Resistance (Iz = 1.0 mA) RZ — — 100
6 The formula given is for the typical characteristics only
MC14046B
PHASE COMPARATOR 1
Input Stage
PCAin
X X
PCBin
00 01
11 10
PC1out 0 1
PHASE COMPARATOR 2
Input Stage
X X 00 00 00
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 145/449
Figure 1. Phase Comparators State Diagrams
PCAin PCBin
PC2out 0 13–State
Output Disconnected
LD (Lock Detect) 0 01
Refer to Waveforms in Figure 3.
00
01 10
11
00
10 01
11
00
01
11
Characteristic Using Phase Comparator 1 Using Phase
No signal on input PCAin. VCO in PLL system adjusts to center
frequency (f0).
VCO in PLL system a
frequency (fmin).
Phase angle between PCAin and PCBin. 90° at center frequency (f0), approaching
0 and 180° at ends of lock range (2fL)
Always 0 in lock (po
Locks on harmonics of center frequency. Yes N
Signal input noise rejection. High L
Lock frequency range (2fL). The frequency range of the input signal on which the loop will stay
initially in lock; 2fL = full VCO frequency range = fmax – fmin.
Capture frequency range (2fC). The frequency range of the input signal on which the loop will lock
out of lock.
Depends on low–pass filter characteristics
(see Figure 3). fC fL
fC
Center frequency (f0). The frequency of VCOout, when VCOin = 1/2 VDD
VCO output frequency (f) 1
MC14046B
Typical Low–Pass Filters
PCAin
@ FREQUENCY f′
PCBin
14
3PHASE
COMPARATOR
EXTERNAL
LOW–PASS
FILTER
VCO2 OR 13
PC1out
OR
PC2out
VCOin
9
9 10
4
EXTERNAL
÷ N
COUNTER
R1 R2
11 12 6 7CIA CIB
CI
SFou
RSF
(a) R3 (a) R3Typically:
6N
SOURCE
FOLLOWER
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 146/449
NOTE: Sometimes R3 is split into two series resistors each R3 ÷ 2. A capacitor CC is then placed from the midpoint
CC should be such that the corner frequency of this network does not significantly affectωn. In Figure B, the r
damping, R4 (0.1)(R3) for optimum results.
Waveforms
(a)
INPUTOUTPUT
C22fC
1 2 fL
R3 C2
(a)
INPUTOUTPUT
R4
C2
R4 C26N
fmax –
(R3
3,000 ) C2
∆ f = fmax – fmin
Definitions: N = Total division ratio in feedback loop
Kφ = VDD / π for Phase Comparator 1Kφ = VDD /4 π for Phase Comparator 2
KVCO2 fVCOVDD – 2 V
2 fr10
for a typical design ωn (at phase detector input)
ζ 0.707
LOW–PASS FIL
Filter A
nK KVCONR3C2
N n2K KVCO
F(s) 1R3C2S 1
n NC
0.5 n
F(s)S(R
PCAin
PCBin
PC1out
VCOin
VDD
VSS
VOH
VOL
VOH
VOLVOH
VOL
PCAin
PCBin
PC2out
LD
Phase Comparator 1 Phase Comp
The MC14049B Hex Inverter/Buffer and MC14050B NoninvertingHex Buffer are constructed with MOS P–Channel and N–Channel
enhancement mode devices in a single monolithic structure. Thesecomplementary MOS devices find primary use where low powerdissipation and/or high noise immunity is desired. These devicesprovide logic level conversion using only one supply voltage, VDD.
The input–signal high level (VIH) can exceed the VDD supplyvoltage for logic level conversions. Two TTL/DTL loads can be drivenwhen the devices are used as a CMOS–to–TTL/DTL converter (VDD
http://onsem
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 147/449
= 5.0 V, VOL 0.4 V, IOL ≥ 3.2 mA).Note that pins 13 and 16 are not connected internally on these
devices; consequently connections to these terminals will not affectcircuit operation.
• High Source and Sink Currents• High–to–Low Level Converter• Supply Voltage Range = 3.0 V to 18 V• VIN can exceed VDD
• Meets JEDEC B Specifications• Improved ESD Protection On All Inputs
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin Input Voltage Range
(DC or Transient)
–0.5 to +18.0 V
Vout Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin Input Current(DC or Transient) per Pin
± 10 mA
Iout Output Current
(DC or Transient) per Pin
± 45 mA
PD Power Dissipation,
per Package (Note 3.)
(Plastic)
(SOIC)
825
740
mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
XX = Specific
A = Assemb
WL or L = Wafer L
YY or Y = YearWW or W = Work W
Device Packa
ORDERING INF
MC14049BCP PDIP–
MC14049BD SOIC–
MC14049BDR2 SOIC–
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14049BF SOEIAJ
MC14050BCP PDIP–
TSSOP–
DT SUFF
CASE 94
MC14049B, MC14050B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
OUTE
NC
INF
OUTF
NC
IND
OUTD
INE
OUTB
INA
OUTA
VDD
VSS
INC
OUTC
INB
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 148/449
LOGIC DIAGRAMMC14049B
14 15
11
9
7
5
3
12
10
6
4
2
NC = PIN 13, 16
VSS = PIN 8
VDD = PIN 1
MC14050B
14 15
11
9
7
5
3
12
10
6
4
2
NC = PIN 13, 16
VSS = PIN 8
VDD = PIN 1
MC14049B, MC14050B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C + 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0
VOH 5.0
1015
4.95
9.9514.95
—
— —
4.95
9.9514.95
5.0
1015
—
— —
4.
9.14
Input Voltage “0” Level
(VO = 4.5 Vdc)
(VO = 9.0 Vdc)
(VO = 13.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level VIH
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 149/449
(VO = 0.5 Vdc)
(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
10
15
– 1.6
– 1.6
– 4.7
—
—
—
– 1.25
– 1.30
– 3.75
– 2.5
– 2.6
– 10
—
—
—
–
–
– 3
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
3.75
10
30
—
—
—
3.2
8.0
24
6.0
16
40
—
—
2
6
1
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance (Vin = 0) Cin — — — — 10 20 —
Quiescent Current (Per Package) IDD 5.0
10
15
—
—
—
1.0
2.0
4.0
—
—
—
0.002
0.004
0.006
1.0
2.0
4.0
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
per package)
(CL = 50 pF on all outputs, all
buffers switching
IT 5.0
10
15
IT = (1.8 µA/kHz) f + IDD
IT = (3.5 µA/kHz) f + IDD
IT = (5.3 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at + 25 C6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
Where: IT is in µA (per Package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency and k = 0.002.
MC14049B, MC14050B
AC SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = + 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise Time
tTLH = (0.7 ns/pF) CL + 65 ns
tTLH = (0.25 ns/pF) CL + 37.5 ns
tTLH = (0.2 ns/pF) CL + 30 ns
tTLH
5.0
10
15
—
—
—
100
50
40
Output Fall TimetTHL = (0.2 ns/pF) CL + 30 ns
tTHL = (0.06 ns/pF) CL + 17 ns
tTHL = (0.04 ns/pF) CL + 13 ns
tTHL5.0
10
15
—
—
—
40
20
15
Propagation Delay Time
tPLH = (0.33 ns/pF) CL + 63.5 ns
tPLH = (0.19 ns/pF) CL + 30.5 ns
tPLH = (0.06 ns/pF) CL + 27 ns
tPLH
5.0
10
15
—
—
—
80
40
30
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 150/449
Propagation Delay Time
tPHL = (0.2 ns/pF) CL + 30 ns
tPHL = (0.1 ns/pF) CL + 15 nstPHL = (0.05 ns/pF) CL + 12.5 ns
tPHL
5.0
1015
—
— —
40
2015
7. The formulas given are for the typical characteristics only at 25 C.8. Data labeled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential per
MC14049B MC14050B MC14049B MCVDD
VSS
VDD
VSS
1
8
1
8
IOLIOHVOH VOL
VDS = VOH – VDD
VDD
VSS
1
8
IOLVOL
VDD = VOL
I O
H ,
O U T P U T S O U R C E C U R R N T ( m A d c )
I O L ,
O U T P U T S I N K C U R R E N T ( m A d c )
– 50
– 40
– 30
– 20
– 10
0
– 10 – 8.0 – 6.0 – 4.0 – 2.0 0
VDS DRAIN–TO–SOURCE VOLTAGE (Vdc)
VGS = 5.0 Vdc
VGS = 10 Vdc
MAXIMUM CURRENT LEVELVGS = 15 Vdc
160
120
80
40
00 2.0 4.0 6
VDS DRAIN–TO–SOURCE V
MAXIMUM CU
VGS = 5.0 Vdc
MC14049B, MC14050B
P D ,
M A X I M U M
P O W E R D I S S I P A T I O N ( m W )
P
E R P A C K A G E
1200
1100
1000
900825800740700
600
500
400
300
200
100
0175150125100755025
TA, AMBIENT TEMPERATURE (°C)
175 mW (P)120 mW (D)
(P) PDIP
(D) SOIC
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 151/449
Figure 3. Ambient Temperature Power Derating
tPHL
Figure 4. Switching Time Test Circuit and Waveforms
PULSE
GENERATOR
VDD
VSS8
1
CL
VoutVin
#
#Invert on MC14049B only
20 ns
90%
50%
10%
90%
50%
10%
90%50%
10%
tTHL
tPHL
tPLH
tTLH
OUTPUTMC14049B
OUTPUT
MC14050B
INPUT
The MC14049UB hex inverter/buffer is constructed with MOSP–channel and N–channel enhancement mode devices in a single
monolithic structure. This complementary MOS device finds primaryuse where low power dissipation and/or high noise immunity isdesired. This device provides logic–level conversion using only onesupply voltage, VDD. The input–signal high level (VIH) can exceed theVDD supply voltage for logic–level conversions. Two TTL/DTLLoads can be driven when the device is used as CMOS–to–TTL/DTLconverters (VDD = 5.0 V, VOL 0.4 V, IOL ≥ 3.2 mA). Note that pins13 and 16 are not connected internally on this device; consequently
http://onsem
PDIP 16
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 152/449
13 and 16 are not connected internally on this device; consequentlyconnections to these terminals will not affect circuit operation.
• High Source and Sink Currents• High–to–Low Level Converter• Supply Voltage Range = 3.0 V to 18 V• Meets JEDEC UB Specifications• VIN can exceed VDD
• Improved ESD Protection on All Inputs
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin Input Voltage Range
(DC or Transient)
–0.5 to +18.0 V
Vout Output Voltage Range
(DC or Transient)
–0.5 to VDD +0.5 V
Iin Input Current
(DC or Transient) per Pin
± 10 mA
Iout Output Current
(DC or Transient) per Pin
+45 mA
PD Power Dissipation,
per Package (Note 3.)
Plastic
SOIC
825
740
mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2 Maximum Ratings are those values beyond which damage to the device
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14049UBCP PDIP–
MC14049UBD SOIC–
C C
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
TSSOP–DT SUFF
CASE 94
MC14049UB
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
OUTE
NC
INF
OUTF
NC
IND
OUTD
INE
OUTB
INA
OUTA
VDD
VSS
INC
OUTC
INB
NC = NO CONNECTION
LOGIC DIAGRAM
MC14049UB
14 15
11
9
7
5
3
12
10
6
4
2
NC = PIN 13, 16
VSS = PIN 8
VDD = PIN 1
CIRCUIT
(1/6 OF CI
MC140
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 153/449
VDD = PIN 1
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
V – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14Input Voltage “0” Level
(VO = 4.5 Vdc)
(VO = 9.0 Vdc)
(VO = 13.5 Vdc)
VIL
5.0
10
15
—
—
—
1.0
2.0
2.5
—
—
—
2.25
4.50
6.75
1.0
2.0
2.5
—
—
—
“1” Level
(VO = 0.5 Vdc)
(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
VIH
5.0
10
15
4.0
8.0
12.5
—
—
—
4.0
8.0
12.5
2.75
5.50
8.25
—
—
—
4
8
12
Output Drive Current(VOH = 2.5 Vdc) Source
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH5.0
10
15
– 1.6
– 1.6
– 4.7
—
—
—
– 1.25
– 1.3
– 3.75
– 2.5
– 2.6
– 10
—
—
—
–
–
– 3
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
3.75
10
30
—
—
—
3.2
8.0
24
6.0
16
40
—
—
—
2
6
1
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance (Vin = 0) Cin — — — — 10 20 —
Quiescent Current(Per Package)
IDD 5.010
15
— —
—
1.02.0
4.0
— —
—
0.0020.004
0.006
1.02.0
4.0
— —
—
MC14049UB
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise Time
tTLH = (0.8 ns/pF) CL + 60 ns
tTLH = (0.3 ns/pF) CL + 35 ns
tTLH = (0.27 ns/pF) CL + 26.5 ns
tTLH
5.0
10
15
—
—
—
100
50
40
Output Fall TimetTHL = (0.3 ns/pF) CL + 25 ns
tTHL = (0.12 ns/pF) CL + 14 ns
tTHL = (0.1 ns/pF) CL + 10 ns
tTHL 5.0
10
15
—
—
—
40
20
15
Propagation Delay Time
tPLH = (0.38 ns/pF) CL + 61 ns
tPLH = (0.20 ns/pF) CL + 30 ns
tPLH = (0.11 ns/pF) CL + 24.5 ns
tPLH
5.0
10
15
—
—
—
80
40
30
Propagation Delay Time tPHL
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 154/449
Propagation Delay Time
tPHL = (0.38 ns/pF) CL + 11 ns
tPHL = (0.12 ns/PF) CL + 9 nstPHL = (0.11 ns/pF) CL + 4.5 ns
tPHL
5.0
1015
—
— —
30
1510
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
Figure 1. Typical Voltage Transfer Characteristics versus Temperature
V o u t ,
O U T P U T V O L T A G E ( V d c )
18
15
10
5
1815105Vin, INPUT VOLTAGE (Vdc)
VDD = 5 Vdc
VDD = 15 Vdc
– 55°C
+125°C
VDD = 10 Vdc
MC14049UB
VDD
VSS
1
8
IOHVOH
VDS = VOH – VDD
VDD
VSS
1
8
IOL
VD
P U T S O U R C E C U R R N T ( m A d
c )
T P U T S I N K C U R R E N T ( m A d c )
– 30
– 20
– 10
0
VGS = 5.0 Vdc
VGS = 10 Vdc
160
120
80
MAXIMUM CU
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 155/449
Figure 2. Typical Output Source Characteristics Figure 3. Typical Output Sink
I O H
, O U T
I O
L ,
O U T
– 50
– 40
– 10 – 8.0 – 6.0 – 4.0 – 2.0 0
VDS, DRAIN–TO–SOURCE VOLTAGE (Vdc)
MAXIMUM CURRENT LEVELVGS = 15 Vdc
40
00 2.0 4.0 6.
VDS, DRAIN–TO–SOURCE VO
VGS = 5.0 Vdc
Figure 4. Ambient Temperature Power Derating
P D ,
M A X I M U M
P O W E R D I S S I P A T I O N ( m W )
P
E R P A C K A G E
1200
1100
1000
900825800740700
600
500
400
300
200
100
0175150125100755025
TA, AMBIENT TEMPERATURE (°C)
175 mW (P)120 mW (D)
(P) PDIP
(D) SOIC
PULSE
GENERATOR
VD
VSS8
1
Vin
20 ns
90%
50%
10%
90%
50%
10%
tTHL
tPHL
OUTPUT
INPUT
Figure 5. Switching Ti
and Wavefo
The MC14051B, MC14052B, and MC14053B analog multiplexersare digitally–controlled analog switches. The MC14051B effectivelyimplements an SP8T solid state switch, the MC14052B a DP4T, andthe MC14053B a Triple SPDT. All three devices feature low ONimpedance and very low OFF leakage current. Control of analogsignals up to the complete supply voltage range can be achieved.
• Triple Diode Protection on Control Inp ts
http://onsem
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 156/449
• Triple Diode Protection on Control Inputs
• Switch Function is Break Before Make• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Analog Voltage Range (VDD – VEE) = 3.0 to 18 V
Note: VEE must be VSS
• Linearized Transfer Characteristics• Low–noise – 12 nV/ √Cycle, f ≥ 1.0 kHz Typical• Pin–for–Pin Replacement for CD4051, CD4052, and CD4053• For 4PDT Switch, See MC14551B
• For Lower RON, Use the HC4051, HC4052, or HC4053 High–SpeedCMOS Devices
MAXIMUM RATINGS (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage (Referenced
to VEE, VSS ≥ VEE)
–0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient) (Referen–
ced to VSS for Control Inputsand VEE for Switch I/O)
–0.5 to VDD + 0.5 V
Iin Input Current (DC or Transient)
per Control Pin
± 10 mA
ISW Switch Through Current ± 25 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
XX = Specif
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
TSSOP–
DT SUFF
CASE 94
ORDERING INF
MC14051B, MC14052B, MC14053B
MC14051B
8–Channel Analog
Multiplexer/Demultiplexer
MC14052B
Dual 4–Channel Analog
Multiplexer/Demultiplexer
MC140
Triple 2–Chan
Multiplexer/De
VDD = PIN 16
VSS = PIN 8
VEE = PIN 7
INHIBIT
A
BC
X0
X1
X2
X3X4
X5
X6
X7
X
4
2
5
112
15
14
13
910
11
6
CONTROLS
SWITCHES
IN/OUT
COMMON
OUT/IN
3
4
2
51
11
15
14
129
10
6
CONTROLS
SWITCHES
IN/OUT
13
3
COMMONS
OUT/IN
X
Y
VDD = PIN 16
VSS = PIN 8
VEE = PIN 7
3
51
2
13
12
910
11
6
CONTROLS
SWITCHES
IN/OUT
VDD = P
VSS =
VEE =
INHIBIT
A
BX0
X1
X2
X3Y0
Y1
Y2Y3
INHIB
A
BC
X0
Y0
Y1Z0
Z1
X1
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 157/449
Note: Control Inputs referenced to VSS, Analog Inputs and Outputs reference to VEE. VEE must be ≤ VSS.
PIN ASSIGMENT
MC14051B MC14052B MC
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
X3
X0
X1
X2
VDD
C
B
A
X7
X
X6
X4
VSS
VEE
INH
X5
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
X0
X
X1
X2
VDD
B
A
X3
Y3
Y
Y2
Y0
VSS
VEE
INH
Y1 5
4
3
2
1
8
7
6
Z
Z1
Y0
Y1
VSS
VEE
INH
Z0
MC14051B, MC14052B, MC14053B
ELECTRICAL CHARACTERISTICS
– 55 C 25 C
Characteristic Symbol VDD Test Conditions Min Max Min Typ (3.) Max
SUPPLY REQUIREMENTS (Voltages Referenced to VEE)
Power Supply Voltage
Range
VDD — VDD – 3.0 ≥ VSS ≥ VEE 3.0 18 3.0 — 18
Quiescent Current Per
Package
IDD
5.0
10
15
Control Inputs:
Vin = VSS or VDD,
Switch I/O: VEE VI/O
VDD, and ∆Vswitch
500 mV (4.)
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
Total Supply Current
(Dynamic Plus
Quiescent, Per Package
ID(AV) 5.0
10
15
TA = 25 C only (The
channel component,
(Vin – Vout)/Ron, is
not included.)
(0.07 µA/kHz) f + IDD
Typical (0.20 µA/kHz) f + IDD
(0.36 µA/kHz) f + IDD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 158/449
CONTROL INPUTS — INHIBIT, A, B, C (Voltages Referenced to VSS)
Low–Level Input Voltage VIL 5.010
15
Ron = per spec,Ioff = per spec
— —
—
1.53.0
4.0
— —
—
2.254.50
6.75
1.53.0
4.0
High–Level Input Voltage VIH 5.0
10
15
Ron = per spec,
Ioff = per spec
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
Input Leakage Current Iin 15 Vin = 0 or VDD — ± 0.1 — ± 0.00001 ± 0.1
Input Capacitance Cin — — — — 5.0 7.5
SWITCHES IN/OUT AND COMMONS OUT/IN — X, Y, Z (Voltages Referenced to VEE)Recommended
Peak–to–Peak Voltage
Into or Out of the Switch
VI/O — Channel On or Off 0 VDD 0 — VDD
Recommended Static or
Dynamic Voltage Across
the Switch (4.) (Figure 5)
∆Vswitch — Channel On 0 600 0 — 600
Output Offset Voltage VOO — Vin = 0 V, No Load — — — 10 —
ON Resistance Ron 5.0
1015
∆Vswitch 500 mV (4.)
Vin = VIL or VIH(Control), and Vin =
0 to VDD (Switch)
—
— —
800
400220
—
— —
250
12080
1050
500280
∆ON Resistance Between
Any Two Channels in the
Same Package
∆Ron 5.0
10
15
—
—
—
70
50
45
—
—
—
25
10
10
70
50
45
Off–Channel Leakage
Current (Figure 10)
Ioff 15 Vin = VIL or VIH
(Control) Channel to
Channel or Any One
Channel
— ± 100 — ± 0.05 ± 100
Capacitance, Switch I/O CI/O — Inhibit = VDD — — — 10 —
Capacitance, Common O/I CO/I — Inhibit = VDD
(MC14051B) 60
MC14051B, MC14052B, MC14053B
ELECTRICAL CHARACTERISTICS (5.) (CL = 50 pF, TA = 25 C) (VEE VSS unless otherwise indicated)
Characteristic Symbol
VDD – VEE
Vdc
Typ (6.)
All Types
Propagation Delay Times (Figure 6)
Switch Input to Switch Output (RL = 10 kΩ)MC14051
tPLH, tPHL = (0.17 ns/pF) CL + 26.5 nstPLH, tPHL = (0.08 ns/pF) CL + 11 ns
tPLH, tPHL = (0.06 ns/pF) CL + 9.0 ns
tPLH, tPHL
5.010
15
3515
12
MC14052tPLH, tPHL = (0.17 ns/pF) CL + 21.5 ns
tPLH, tPHL = (0.08 ns/pF) CL + 8.0 ns
tPLH, tPHL = (0.06 ns/pF) CL + 7.0 ns
5.0
10
15
30
12
10
MC14053
tPLH, tPHL = (0.17 ns/pF) CL + 16.5 nstPLH, tPHL = (0.08 ns/pF) CL + 4.0 ns
tPLH, tPHL = (0.06 ns/pF) CL + 3.0 ns
5.010
15
258.0
6.0
Inhibit to Output (R 10 kΩ V V ) t t
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 159/449
Inhibit to Output (RL = 10 kΩ, VEE = VSS)
Output “1” or “0” to High Impedance, orHigh Impedance to “1” or “0” LevelMC14051B
tPHZ, tPLZ,
tPZH, tPZL
5.0
10
15
350
170
140
MC14052B 5.010
15
300155
125
MC14053B 5.010
15
275140
110
Control Input to Output (RL = 10 kΩ, VEE = VSS)MC14051B
tPLH, tPHL
5.0
1015
360
160120
MC14052B 5.010
15
325130
90
MC14053B 5.0
1015
300
12080
Second Harmonic Distortion(RL = 10KΩ, f = 1 kHz) V in = 5 VPP
— 10 0.07
Bandwidth (Figure 7)(RL = 1 kΩ, Vin = 1/2 (VDD –VEE) p–p, CL = 50pF
20 Log (Vout /Vin) = – 3 dB)
BW 10 17
Off Channel Feedthrough Attenuation (Figure 7)RL = 1KΩ, Vin = 1/2 (VDD – VEE) p–p
fin = 4.5 MHz — MC14051B
fin = 30 MHz — MC14052B
fin = 55 MHz — MC14053B
— 10 – 50
Channel Separation (Figure 8)
(RL = 1 kΩ, Vin = 1/2 (VDD –VEE) p–p,
fin = 3.0 MHz
— 10 – 50
MC14051B, MC14052B, MC14053B
IN/OUT
LEVEL
CONVERTED
CONTROL
VDD
VDD VDDVDD
OUT/IN
VEE
IN/OUT OUT/IN
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 160/449
Figure 1. Switch Circuit Schematic
VEECONTROL
TRUTH TABLE
Control Inputs
Select ON Switches
Inhibit C* B A MC14051B MC14052B MC14053B
0 0 0 0 X0 Y0 X0 Z0 Y0 X0
0 0 0 1 X1 Y1 X1 Z0 Y0 X1
0 0 1 0 X2 Y2 X2 Z0 Y1 X0
0 0 1 1 X3 Y3 X3 Z0 Y1 X1
0 1 0 0 X4 Z1 Y0 X0
0 1 0 1 X5 Z1 Y0 X1
0 1 1 0 X6 Z1 Y1 X0
0 1 1 1 X7 Z1 Y1 X1
1 x x x None None None
*Not applicable for MC14052x = Don’t Care
16 VDD
8 VSS 7 VEE
BINARY TO 1–OF–4
DECODER WITH
INHIBIT
LEVEL
CONVERTER
INH 6
A 10
B 9
X0 12
X1 14
BINARY T
DECOD
INH
LEVEL
CONVERTER
16 VDD
8 VSS 7 VEE
INH 6A 11B 10
C 9
Figure 2. MC14051B Funct
INH 6A 11B 10
C 9
X0 13
X1 14
X2 15
X3 12
X4 1
X5 5
X6 2
X7 4
8 VSS 7 VEE
16 VDD
BINAR
DECLEVEL
CONVERTER
MC14051B, MC14052B, MC14053B
TEST CIRCUITS
Figure 5. ∆V Across Switch Figure 6. Propagation
Control and Inhibi
CONTROL
SECTION
OF IC
SOURCE
V
ON SWITCH
PULSE
GENERATOR
INH
A
BC
VDD
LOAD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 161/449
Figure 7. Bandwidth and Off–Channel
Feedthrough Attenuation
Figure 8. Channel
(Adjacent Channels Us
INH
AB
C
VSS
Vin
RL CL = 50 pF
Vout
VDD – VEE
2
INH
AB
C
OFF
ON
VinVDD – VEE
2
INH
AB
C
R1
RL CL = 50 pF
Vout
CONTROL
SECTION
OF IC
OFF
OTH
CHA
COMMON
A, B, and C inputs used to turn ON
or OFF
the switch under test.
MC14051B, MC14052B, MC14053B
Figure 11. Channel Resistance (RON) Test Circuit
VDD
VEE = VSS
10 k
VDD
KEITHLEY 160
DIGITAL
MULTIMETER
1 kΩ
RANGE X–Y
PLOTTER
TYPICAL RESISTANCE CHARACTERISTICS
M S )
350
300
M S )
350
300
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 162/449
Figure 12. VDD = 7.5 V, VEE = – 7.5 V Figure 13. VDD = 5.0 V, V
R O N ,
“ O N ” R E S I S T A N C E ( O
H M
250
200
150
100
0
50
– 8.0 – 10 – 6.0 – 4.0 – 2.0 0 0.2 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (VOLTS)
TA = 125°C
25°C
– 55°C R O N ,
“ O N ” R E S I S T A N C E ( O
H M
250
200
150
100
0
50
– 8.0 – 10 – 6.0 – 4.0 – 2.0 0 0.
Vin, INPUT VOLTAGE (
Figure 14. VDD = 2.5 V, VEE = – 2.5 V
R O N ,
“ O N ” R E S I S T A N C E ( O H M S )
700
600
500
400
300
200
0
100
– 8.0 – 10 – 6.0 – 4.0 – 2.0 0 0.2 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (VOLTS)
TA = 125°C
25°C
– 55°C
Figure 15. Comparison at 2
R O N ,
“ O N ” R E S I S T
A N C E ( O H M S )
350
300
250
200
150
100
0
50
– 8.0 – 10 – 6.0 – 4.0 – 2.0 0 0.
Vin, INPUT VOLTAGE (
TA = 25°C
VDD
MC14051B, MC14052B, MC14053B
APPLICATIONS INFORMATION
Figure A illustrates use of the on–chip level converterdetailed in Figures 2, 3, and 4. The 0–to–5 V Digital Controlsignal is used to directly control a 9 Vp–p analog signal.
The digital control logic levels are determined by VDDand VSS. The VDD voltage is the logic high voltage; the VSSvoltage is logic low. For the example, VDD = + 5 V = logic
high at the control inputs; VSS = GND = 0 V = logic low.The maximum analog signal level is determined by VDD
and VEE. The VDD voltage determines the maximumrecommended peak above VSS. The VEE voltagedetermines the maximum swing below VSS. For theexample, VDD – VSS = 5 V maximum swing above VSS;VSS – VEE = 5 V maximum swing below VSS. The exampleshows a ± 4.5 V signal which allows a 1/2 volt margin at each
peak. If voltage transients above VDDanticipated on the analog channels, exrecommended as shown in Figure B. Tsmall signal types able to absorb the current surges during clipping.
The absolute maximum potentia
VDD and VEE is 18.0 V. Most paramet15 V which is the recommended
between VDD and VEE.Balanced supplies are not required
be greater than or equal to VEE. For V, VSS = + 5 V, and VEE – 3 V is accbelow.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 163/449
Figure A. Application Example
+ 5 V – 5 V
VDD VSS VEE
9 Vp–p
ANALOG SIGNAL
0–TO–5 V DIGITAL
CONTROL SIGNALS
SWITCH
I/O
INHIBIT,
A, B, C
COMMON
O/I
9 Vp–p
ANALOG SIGNAL
+ 5 V
EXTERNALCMOS
DIGITAL
CIRCUITRY
MC14051B
MC14052B
MC14053B
Figure B. External Germanium or Schottky Clipping Diodes
VDD VDD
VEE VEE
DX DX
DX DX
ANALOG
I/O
COMMON
O/I
POSSIBLE SUPPLY CONNECTIONS
MC14051B, MC14052B, MC14053B
ORDERING & SHIPPING INFORMATION:
Device Package Shipping
MC14051BCP PDIP–16 2000 Units per Box
MC14051BD SOIC–16 48 Units per Rail
MC14051BDR2 SOIC–16 2500 Units / Tape & Reel
MC14051BDT TSSOP–16 96 Units per Rail
MC14051BDTEL TSSOP–16 2000 Units / Tape & Reel
MC14051BDTR2 TSSOP–16 2500 Units / Tape & Reel
MC14051BF SOEIAJ–16 See Note 7.
MC14051BFEL SOEIAJ–16 See Note 7.
MC14052BCP PDIP–16 2000 Units per Box
MC14052BD SOIC–16 48 Units per Rail
ORDERING & SHIPPING INFORMA
MC14053BCP PDIP–16
MC14053BD SOIC–16
MC14053BDR2 SOIC–16 250
MC14053BDT TSSOP–16
MC14053BDTEL TSSOP–16 200
MC14053BDTR2 TSSOP–16 250
MC14053BF SOEIAJ–16
MC14053BFEL SOEIAJ–16
7. For ordering information on the EIApackages, please contact your local Oresentative.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 164/449
MC14052BDR2 SOIC–16 2500 Units / Tape & Reel
MC14052BDT TSSOP–16 96 Units per Rail
MC14052BDTR2 TSSOP–16 2500 Units / Tape & Reel
MC14052BF SOEIAJ–16 See Note 7.
MC14052BFEL SOEIAJ–16 See Note 7.
The MC14060B is a 14–stage binary ripple counter with an on–chip
oscillator buffer. The oscillator configuration allows design of eitherRC or crystal oscillator circuits. Also included on the chip is a resetfunction which places all outputs into the zero state and disables theoscillator. A negative transition on Clock will advance the counter tothe next state. Schmitt trigger action on the input line permits veryslow input rise and fall times. Applications include time delay circuits,counter controls, and frequency dividing circuits.
• Fully static operation
http://onsem
PDIP–16
P SUFFI
CASE 64
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 165/449
• Diode Protection on All Inputs• Supply Voltage Range = 3.0 V to 18 V• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Buffered Outputs Available from Stages 4 Through 10 and
12 Through 14• Common Reset Line• Pin–for–Pin Replacement for CD4060B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14060BCP PDIP–
MC14060BD SOIC–
C C
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
TSSOP–
DT SUFF
CASE 94
MC14060B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
RESET
Q9
Q8
Q10
VDD
OUT 2
OUT 1
CLOCK
Q6
Q13
Q12
VSS
Q4
Q7
Q5
Q14
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 166/449
TRUTH TABLE
Clock Reset Output State
L No Change
L Advance to next state
X H All Outputs are low
X = Don’t Care
LOGIC DIAGRAM
OUT 2
OUT 1
CLOCK
RESET12
11
10
9 Q4 Q5 Q1257 1
C Q
RC Q
C Q
RC Q
C Q
RC Q
C Q
RC Q
C
C
Q6 = PIN 4
Q7 = PIN 6
Q8 = PIN 14
Q9 = PIN 13
Q10 =
MC14060B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc
Min Max Min Typ (4.)
Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 or VDD “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4
9
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 V)
(VO = 9.0 or 1.0 V)
(VO = 13.5 or 1.5 V)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
(VO = 0.5 or 4.5 V) “1” Level
(VO = 1.0 or 9.0 V)
(VO = 1.5 or 13.5 V)
VIH 5.0
10
15
3.5
7.0
11.0
—
—
—
3.5
7.0
11.0
2.75
5.50
8.25
—
—
—
3
7
1
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 167/449
Input Voltage “0” Level
(VO = 4.5 Vdc) (For Input 11
(VO = 9.0 Vdc) and Output 10)
(VO = 13.5 Vdc)
VIL
5.0
10
15
—
—
—
1.0
2.0
2.5
—
—
—
2.25
4.50
6.75
1.0
2.0
2.5
—
—
—
(VO = 0.5 Vdc) “1” Level
(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
VIH 5.0
10
15
4.0
8.0
12.5
—
—
—
4.0
8.0
12.5
2.75
5.50
8.25
—
—
—
4
8
1
Output Drive Current
(VOH = 2.5 V) (Except Source
(VOH = 4.6 V) Pins 9 and 10)(VOH = 9.5 V)
(VOH = 13.5 V)
IOH
5.0
5.010
15
– 3.0
– 0.64 – 1.6
– 4.2
—
— —
—
– 2.4
– 0.51 – 1.3
– 3.4
– 4.2
– 0.88 – 2.25
– 8.8
—
— —
—
–
– –
–
(VOL = 0.4 V) Sink
(VOL = 0.5 V)
(VOL = 1.5 V)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0
0
2
Input Current Iin 15 — ± 0.1 — ± 0.00001 ± 0.1 —
Input Capacitance (Vin = 0) Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
1015
—
— —
5.0
1020
—
— —
0.005
0.0100.015
5.0
1020
—
— —
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs,
all buffers switching)
IT 5.0
10
15
IT = (0.25 µA/kHz) f + IDD
IT = (0.54 µA/kHz) f + IDD
IT = (0.85 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
MC14060B
SWITCHING CHARACTERISTICS (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (7.)
Output Rise Time (Counter Outputs) tTLH 5.0
10
15
—
—
—
40
25
20
Output Fall Time (Counter Outputs) tTHL 5.0
10
15
—
—
—
50
30
20
Propagation Delay Time
Clock to Q4
tPLH
tPHL
5.0
10
15
—
—
—
415
175
125
Clock to Q14 5.0
10
15
—
—
—
1.5
0.7
0.4
Clock Pulse Width twH 5.0
10
100
40
65
30
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 168/449
15 30 20
Clock Pulse Frequency fφ 5.0
10
15
—
—
—
5
14
17
Clock Rise and Fall Time tTLH
tTHL
5.0
10
15
No Limit
Reset Pulse Width tw 5.0
10
15
120
60
40
40
15
10
Propagation Delay Time
Reset to On
tPHL 5.0
10
15
—
—
—
170
80
60
7. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
PULSE
GENERATOR
ID
VDD
500 µF 0.01 µF
CLOCK
NC
NC
Q4
Q5
QnR
OUT1
OUT2
VSS CL
CL
CL
PULSE
GENERATOR
VDD
CLOCK
NCNC
Q4
Q5
QnR
OUT1OUT2
VSS
20 ns
CLOCK
t
90%50%
10%
MC14060B
Figure 3. Oscillator Circuit Using RC Configuration
CLOCK 11
RESET
RS Ctc
Rtc
10 OUT 1 9 OUT 2
f 12.3RtcCtc
if 1 kHz ≤ f ≤ 100 kHz
and 2Rtc < RS < 10Rtc
(f in Hz, R in ohms, C in farads)
The formula may vary for other frequenc
maximum value for the resistors in 1 MΩ.
TYPICAL RC OSCILLATOR CHARACTERISTICS
4.0
8.0
( % )
VDD = 15 V
Y ( k H z )
100
50
20
VDD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 169/449
Figure 4. RC Oscillator Stability Figure 5. RC Oscillator Fre
Function of RTC an
– 8.0
– 12
– 16
– 4.0
0
1251007550250 – 25 – 55
TA, AMBIENT TEMPERATURE (°C)
F R E Q U E N C Y D E V I A T I O N
1.0 V
5.0 V
RTC = 56 kΩ
C = 1000 pF
RS = 0, f = 10.15 kHz @ VDD = 10, TA = 25°C
RS = 120 kΩ, f= 7.8 kHz @ VDD = 10V, TA = 25°C
f , O S C I L L A T O R F R E Q U E N C Y
10
5
2
1
0.5
0.2
0.11.0 k 10 kRTC, RESISTANCE (OH
0.0001 0.001C, CAPACITANCE (µ
f AS A FUNCTION
OF C
(RTC = 56 kΩ)
(RS = 120 k)
Figure 6. Typical Crystal Oscillator Circuit
CLOCK
11
RESET 9 OUT 210 OUT 1
18M
RO
CS CT
Characteristic
500
Ci
Crystal Characteristics
Resonant Frequency
Equivalent Resistance, RS
5
External Resistor/Capacitor Values
RO
CT
CS
Frequency StabilityFrequency Changes as a
Function of VDD (TA = 25 C)
V Ch f 5 0 V 10V
The MC14066B consists of four independent switches capable of
controlling either digital or analog signals. This quad bilateral switchis useful in signal gating, chopper, modulator, demodulator andCMOS logic implementation.
The MC14066B is designed to be pin–for–pin compatible with theMC14016B, but has much lower ON resistance. Input voltage swingsas large as the full supply voltage can be controlled via eachindependent control input.
• Triple Diode Protection on All Control Inputs
http://onsem
PDIP–14
P SUFFIX
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 170/449
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Linearized Transfer Characteristics• Low Noise — 12 nV/ √Cycle, f ≥ 1.0 kHz typical• Pin–for–Pin Replacement for CD4016, CD4016, MC14016B• For Lower RON, Use The HC4066 High–Speed CMOS Device
MAXIMUM RATINGS (Voltages Referenced to VSS
) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin Input Current (DC or Transient)
per Control Pin
± 10 mA
ISW Switch Through Current ± 25 mA
PD Power Dissipation,per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
t ti lt g l t i fi ld H ti m t b t k t id
A = Assemb
WL or L = Wafer L
YY or Y = Year
WW or W = Work W
Device Packag
ORDERING INF
MC14066BCP PDIP–
MC14066BD SOIC–
MC14066BDR2 SOIC–
CASE 64
SOIC–14
D SUFFIX
CASE 751
TSSOP–1
DT SUFFCASE 948
SOEIAJ–1
F SUFFIX
CASE 96
MC14066B
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
OUT 4
IN 4
CONTROL 4
CONTROL 1
VDD
IN 3
OUT 3
IN 2
OUT 2
OUT 1
IN 1
VSS
CONTROL 3
CONTROL 2
LOGIC DIAGRAM AND TRU
(1/4 OF DEVICE SHOW
BLOCK DIAGRAM
CONTROL 113
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 171/449
IN/OUT
CONTROL
IN 4
CONTROL 4
IN 3
CONTROL 3
IN 2
CONTROL 2
IN 1
CONTROL 1OUT 1
OUT 2
OUT 3
OUT 4
1
5
4
6
8
12
11
2
3
9
10
VDD = PIN 14
VSS = PIN 7
Control Switch
0 = VSS OFF
1 = VDD ON
Logic Diagram
VSS ≤ V
VSS ≤ Vo
CIRCUIT SCHEMATIC
(1/4 OF CIRCUIT SHOWN)
VDDVDDVDD
VDDVDD VDD VDD
VSS
MC14066B
ELECTRICAL CHARACTERISTICS
– 55 C 25 C
Characteristic Symbol VDD Test Conditions Min Max Min Typ (4.) Max
SUPPLY REQUIREMENTS (Voltages Referenced to VEE)
Power Supply Voltage
Range
VDD — 3.0 18 3.0 — 18
Quiescent Current Per
Package
IDD 5.0
1015
Control Inputs:
Vin = VSS or VDD,Switch I/O: VSS VI/O
VDD, and
∆Vswitch 500 mV (5.)
—
— —
0.25
0.51.0
—
— —
0.005
0.0100.015
0.25
0.51.0
Total Supply Current
(Dynamic Plus Quiescent,
Per Package
ID(AV) 5.0
10
15
TA = 25 C only The
channel component,
(Vin – Vout)/Ron, is
not included.)
(0.07 µA/kHz) f + IDD
Typical (0.20 µA/kHz) f + IDD
(0.36 µA/kHz) f + IDD
CONTROL INPUTS (Voltages Referenced to VSS)
Low Level Input Voltage VIL 5 0 Ron per spec 1 5 2 25 1 5
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 172/449
Low–Level Input Voltage VIL 5.010
15
Ron = per spec,Ioff = per spec
— —
—
1.53.0
4.0
— —
—
2.254.50
6.75
1.53.0
4.0
High–Level Input Voltage VIH 5.0
10
15
Ron = per spec,
Ioff = per spec
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
Input Leakage Current Iin 15 Vin = 0 or VDD — ± 0.1 — ±0.00001 ± 0.1
Input Capacitance Cin — — — — 5.0 7.5
SWITCHES IN AND OUT (Voltages Referenced to VSS)
Recommended Peak–to–
Peak Voltage Into or Out
of the Switch
VI/O — Channel On or Off 0 VDD 0 — VDD
Recommended Static or
Dynamic Voltage Across
the Switch (5.) (Figure 1)
∆Vswitch — Channel On 0 600 0 — 600
Output Offset Voltage VOO — Vin = 0 V, No Load — — — 10 —
ON Resistance Ron 5.0
10
15
∆Vswitch 500 mV (5.),
Vin
= VIL
or VIH(Control), and Vin =
0 to VDD (Switch)
—
—
—
800
400
220
—
—
—
250
120
80
1050
500
280
∆ON Resistance Between
Any Two Channels
in the Same Package
∆Ron 5.0
10
15
—
—
—
70
50
45
—
—
—
25
10
10
70
50
45
Off–Channel Leakage
Current (Figure 6)
Ioff 15 Vin = VIL or VIH
(Control) Channel to
Channel or Any One
Channel
— ±100 — ± 0.05 ±100
Capacitance, Switch I/O CI/O — Switch Off — — — 10 15
Capacitance, Feedthrough
(Switch Off)
CI/O — — — — 0.47 —
MC14066B
ELECTRICAL CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C unless otherwise noted.)
Characteristic SymbolVDDVdc Min Typ (7.)
Propagation Delay Times VSS = 0 Vdc
Input to Output (RL = 10 kΩ)
tPLH, tPHL = (0.17 ns/pF) CL + 15.5 ns
tPLH, tPHL = (0.08 ns/pF) CL + 6.0 ns
tPLH, tPHL = (0.06 ns/pF) CL + 4.0 ns
tPLH, tPHL
5.0
10
15
—
—
—
20
10
7.0
Control to Output (RL = 1 kΩ) (Figure 2)Output “1” to High Impedance
tPHZ5.0
10
15
—
—
—
40
35
30
Output “0” to High Impedance tPLZ 5.0
10
15
—
—
—
40
35
30
High Impedance to Output “1” tPZH 5.0
10
15
—
—
—
60
20
15
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 173/449
High Impedance to Output “0” tPZL 5.0
10
15
—
—
—
60
20
15
Second Harmonic Distortion VSS = – 5 Vdc
(Vin = 1.77 Vdc, RMS Centered @ 0.0 Vdc,
RL = 10 kΩ, f = 1.0 kHz)
— 5.0 — 0.1
Bandwidth (Switch ON) (Figure 3) VSS = – 5 Vdc
(RL = 1 kΩ, 20 Log (Vout /Vin) = – 3 dB, CL = 50 pF,
Vin = 5 Vp–p)
— 5.0 — 65
Feedthrough Attenuation (Switch OFF) VSS = – 5 Vdc
(Vin = 5 Vp–p, RL = 1 kΩ, fin = 1.0 MHz) (Figure 3)
— 5.0 — – 50
Channel Separation (Figure 4) VSS = – 5 Vdc
(Vin = 5 Vp–p, RL = 1 kΩ, fin = 8.0 MHz)
(Switch A ON, Switch B OFF)
— 5.0 — – 50
Crosstalk, Control Input to Signal Output (Figure 5)
VSS = – 5 Vdc
(R1 = 1 kΩ, RL = 10 kΩ, Control tTLH = tTHL = 20 ns)
— 5.0 — 300
6. The formulas given are for the typical characteristics only at 25 C.7. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14066B
TEST CIRCUITS
Figure 1. ∆V Across Switch Figure 2. Turn–On Delay T
and Waveform
CONTROL
SECTION
OF IC
SOURCE
V
LOAD
ON SWITCH
Vout
Vout
VC
VC
Vout
Vin20 ns
90
5tPZH
tPZL90%
10%
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 174/449
and Waveform
Figure 3. Bandwidth and
Feedthrough Attenuation
Figure 4. Channel S
Vout
CLRL
VDD VSS
VC
Vin
VDD
– VSS
2
VDD – VSS
2
Vin
VDD
VSS
Vin
1 kV
out
RL CL = 50 pF
VC = VDD FOR BANDWIDTH TEST
VC = VSS FOR FEEDTHROUGH TEST
OFF CH
CONTROL
SECTION
OF IC10 k
MC14066B
Figure 7. Channel Resistance (RON) Test Circuit
VDD
VSS
10 k
VDD
KEITHLEY 160
DIGITAL
MULTIMETER
1 kΩ
RANGE X–Y
PLOTTER
TYPICAL RESISTANCE CHARACTERISTICS
350 350
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 175/449
Figure 8. VDD = 7.5 V, VSS = – 7.5 V Figure 9. VDD = 5.0 V, V
R O N
, “ O N ” R E S I S T A N C E ( O H M S )
350
300
250
200
150
100
0
50
– 8.0 – 10 – 6.0 – 4.0 – 2.0 0 0.2 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (VOLTS)
TA = 125°C
25°C – 55°C R
O N
, “ O N ” R E S I S T A N C E ( O H M S )
350
300
250
200
150
100
0
50
– 8.0 – 10 – 6.0 – 4.0 – 2.0 0 0.
Vin, INPUT VOLTAGE (
R O N , “ O
N ” R E S I S T A N C E ( O H M S )
700
600
500
400
300
200
100
TA = 125°C
25°C
– 55°C R O N , “ O
N ” R E S I S T A N C E ( O H M S )
350
300
250
200
150
100
50
TA = 25°C
VDD
MC14066B
APPLICATIONS INFORMATION
Figure A illustrates use of the Analog Switch. The 0–to–5 volt digital control signal is used to directly control a5 volt peak–to–peak analog signal.
The digital control logic levels are determined by VDDand VSS. The VDD voltage is the logic high voltage, the VSSvoltage is logic low. For the example, VDD = + 5 V = logic
high at the control inputs; VSS = GND = 0 V = logic low.The maximum analog signal level is determined by VDDand VSS. The analog voltage must not swing higher thanVDD or lower than VSS.
The example shows a 5 volt peak–to–peak signal whichallows no margin at either peak. If voltage transients above
VDD and/or below VSS are anticichannels, external diodes (Dx) are rein Figure B. These diodes should be sto absorb the maximum anticipated clipping.
The absolute maximum potentia
VDD and VSS is 18.0 volts. Most paramto 15 volts which is the recommended
between VDD and VSS.
+ 5 V
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 176/449
Figure A. Application Example
VDD VSS
5 Vp–p
ANALOG SIGNAL
0–TO–5 V DIGITAL
CONTROL SIGNALS
SWITCH
IN
MC14066B
SWITCH
OUT
5 Vp–p
ANALOG SIGNAL+ 5 V
EXTERNAL
CMOS
DIGITAL
CIRCUITRY
Figure B. External Germanium or Schottky Clipping Diodes
VDD VDD
VSS VSS
DX DX
DX DX
SWITCH
IN
SWITCH
OUT
The MC14067 multiplexer/demultiplexer is a digitally controlled
analog switch featuring low ON resistance and very low leakagecurrent. This device can be used in either digital or analogapplications.
The MC14067 is a 16–channel multiplexer/demultiplexer with aninhibit and four binary control inputs A, B, C, and D. These controlinputs select 1–of–16 channels by turning ON the appropriate analogswitch (see MC14067 truth table.)
• Low OFF Leakage Current•
Matched Channel Resistance• L Q i t P C ti
http://onsem
PDIP–2
P SUFFI
CASE 70
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 177/449
Matched Channel Resistance• Low Quiescent Power Consumption• Low Crosstalk Between Channels• Wide Operating Voltage Range: 3 to 18 V• Low Noise• Pin for Pin Replacement for CD4067B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range – 0.5 to + 18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
– 0.5 to VDD + 0.5 V
Iin Input Current (DC or Transient),
per Control Pin
± 10 mA
Isw Switch Through Current ± 25 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range – 55 to + 125 C
Tstg Storage Temperature Range – 65 to + 150 C
TL Lead Temperature
(8–Second Soldering)
260 C
1. Maximum Ratings are those values beyond which damage to the device
may occur.2. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
Device Packa
ORDERING INF
MC14067BCP PDIP–2
MC14067BDW SOIC–
MC14067BDWR2 SOIC–
SOIC–2
DW SUFF
CASE 75
A = Asse
WL or L = Wafe
YY or Y = Year
WW or W = Work
MC14067B
MC14067 TRUTH TABLE
Control InputsSelected
A B C D Inh Channel
X X X X 1 None
0 0 0 0 0 X0
1 0 0 0 0 X1
0 1 0 0 0 X2
1 1 0 0 0 X3
0 0 1 0 0 X4
1 0 1 0 0 X5
0 1 1 0 0 X6
1 1 1 0 0 X7
0 0 0 1 0 X8
1 0 0 1 0 X9
0 1 0 1 0 X10
1 1 0 1 0 X11
0 0 1 1 0 X12
1 0 1 1 0 X130 1 1 1 0 X14
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 178/449
0 1 1 1 0 X14
1 1 1 1 0 X15
X3
X5
X6
X7
X
X1
X2
X4 X11
X10
X9
X8
VDD
INHIBIT
X15
X14
5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
13
11
12
21
22
23
24
D
C
X13
X12
B
VSS
A
X0
MC14067B
PIN ASSIGNMENT
MC14067B
MC14067B
16–Channel Analog
Multiplexer/Demultiplexer
CONTROLS
SWITCHES
IN/OUT
COMMON
OUT/IN
2122
23
2
3
4
5
6
7
9
13
8
14
11
10
15
1
INHIBIT
A
B
C
D
X0
X1
X2
X3
X4
X5
X6
X7
X8
X9X10
X
VDD = PIN 24
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 179/449
16
17
18
19
20 X11
X12
X13
X14
X15
DD
VSS = PIN 12
MC14067 FUNCTIONAL DIAGRAM
1–OF–16 DECODER
INHIBITABCD
X15X14X13X12X11X10X9X8X7X6X5X4X3X2X1X0
CONTROL
INPUTS
X
IN/OUTX
OUT/IN
MC14067B
ELECTRICAL CHARACTERISTICS
– 55°C 25 C
Characteristic Symbol VDD Test Conditions Min Max Min Typ (3.) Max
SUPPLY REQUIREMENTS (Voltages Referenced to VSS)
Power Supply Voltage
Range
VDD — 3.0 18 3.0 — 18
Quiescent Current Per
Package
IDD 5.0
1015
Control Inputs: Vin =
VSS or VDD,Switch I/O: VSS VI/O
VDD, and
∆Vswitch 500 mV (4.)
—
— —
5.0
1020
—
— —
0.005
0.0100.015
5.0
1020
Total Supply Current
(Dynamic Plus
Quiescent,
Per Package
ID(AV) 5.0
10
15
TA = 25 C only (The
channel component,
(Vin – Vout)/Ron, is
not included.)
(0.07 µA/kHz) f + IDTypical (0.20 µA/kHz) f + ID
(0.36 µA/kHz) f + ID
CONTROL INPUTS — INHIBIT, A, B, C, D (Voltages Referenced to VSS)
Low–Level Input Voltage VIL 5.0
10
15
Ron = per spec,
Ioff = per spec
—
—
1.5
3.0
4 0
—
—
2.25
4.50
6 75
1.5
3.0
4 0
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 180/449
15 — 4.0 — 6.75 4.0
High–Level Input Voltage VIH 5.0
10
15
Ron = per spec,
Ioff = per spec
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
Input Leakage Current Iin 15 Vin = 0 or VDD — ± 0.1 — ± 0.00001 ± 0.1
Input Capacitance Cin — — — — 5.0 7.5
SWITCHES IN/OUT AND COMMONS OUT/IN — X, Y (Voltages Referenced to VSS)
Recommended Peak–to– Peak Voltage Into or
Out of the Switch
VI/O — Channel On or Off 0 VDD 0 — VDD
Recommended Static or
Dynamic Voltage
Across the Switch (4.)
(Figure 1)
∆Vswitch — Channel On 0 600 0 — 600
Output Offset Voltage VOO — Vin = 0 V, No Load — — — 10 —
ON Resistance Ron 5.0
1015
∆Vswitch 500 mV (4.),
Vin = VIL or VIH(Control), and Vin
0 to VDD (Switch)
—
— —
800
400220
—
— —
250
12080
1050
500280
∆ON Resistance Between
Any Two Channels
in the Same Package
∆Ron 5.0
10
15
—
—
—
70
50
45
—
—
—
25
10
10
70
50
45
Off–Channel Leakage
Current (Figure 2)
Ioff 15 Vin = VIL or VIH
(Control) Channel to
Channel or Any One
Channel
— ± 100 — ± 0.05 ±100
Capacitance, Switch I/O CI/O — Inhibit = VDD — — — 10 —
Capacitance, Common O/I CO/I — Inhibit = VDD
MC14067B
ELECTRICAL CHARACTERISTICS (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD – VSS
Vdc Typ (5.)
Propagation Delay Times
Channel Input–to–Channel Output (RL = 200 kΩ)
MC14067B
tPLH, tPHL
(Figure 3) 5.0
10
15
35
15
12
Control Input–to–Channel OutputChannel Turn–On Time (RL = 10 kΩ)
MC14067B
tPZH, tPZL
(Figure 4) 5.0
10
15
240
115
75
Channel Turn–Off Time (RL = 300 kΩ)
MC14067B
tPHZ, tPLZ
(Figure 4) 5.0
10
15
250
120
75
Any Pair of Address Inputs to OutputMC14067B
tPLH, tPHL
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 181/449
MC14067B
5.0
10
15
280
115
85
Second Harmonic Distortion
(RL = 10 kΩ, f = 1 kHz, Vin = 5 Vp–p)
— 10 0.3
ON Channel Bandwidth
[RL = 1 kΩ, Vin = 1/2 (VDD – VSS) p–p(sine–wave)]
20 Log10 (Vout /Vin) = – 3 dB MC14067B
BW
(Figure 5) 10 15Off Channel Feedthrough Attenuation
[RL = 1 kΩ, Vin = 1/2 (VDD –VSS) p–p(sine–wave)]
fin = 20 MHz – MC14067B
—
(Figure 5)
10 – 40
Channel Separation
[RL = 1 kΩ, Vin = 1/2 (VDD –VSS) p–p (sine–wave)]
fin = 20 MHz
—
(Figure 6)
10 – 40
Crosstalk, Control Inputs–to–Common O/I
(R1 = 1 kΩ, RL = 10 kΩ,
Control tr
= tf= 20 ns, Inhibit = V
SS)
—
(Figure 7)
10 30
5. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14067B
Figure 1. ∆V Across Switch Figure 2. Off Channel Leaka
CONTROL
SECTION
OF IC
SOURCE
V
LOAD
ON SWITCH
CONTROL
SECTION
OF IC
OFF CHANN
OTHER
CHANNEL(S
A
V
PULSEGENERATOR
VC
ABC
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 182/449
Figure 3. Propagation Delay Test Circuit
and Waveforms Vin to Vout
Figure 4. Turn–On and Dela
Test Circuit and Wave
VDD
Vout
CL = 50 pFRL
Vin
ABCD
INH
Vin
Vout
20 ns 20 nsVDD
VSS
50%
10%
tPLH tPHL
90%50%
CD
INH R
Vin
VDD VSS
20 ns90%
50%10
Vout
Vout
VC
50%
50%
tPZH, tPZL
MC14067B
Figure 5. Bandwidth and Off–Channel
Feedthrough Attenuation
Figure 6. Channel S
(Adjacent Channels Us
A, B, and C inputs used to turn ON or OFF
the switch under test.
ABCD
INH
Vin
RL CL = 50 pF
Vout
VDD
RL
Vin
ABCD
INH OFF
ON
VC
ABC
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 183/449
Figure 7. Crosstalk, Control to Common O/I
CD
INH RL CL = 50 pF
Vout
R1
VDD
VSS
10 k
KEITHLEY 160
DIGITAL
MULTIMETER
X–Y
PLOTTER
1 kΩ
RANGE
VDD
VAVB
ABCD
INH
CL Vout
Vout
VB
VA
tPHL
MC14067B
TYPICAL RESISTANCE CHARACTERISTICS
Figure 10. VDD = 7.5 V, VSS = – 7.5 V Figure 11. VDD = 5.0 V,
R O N ,
“ O N ” R E S I S T A N C E ( O H M S )
350
300
250
200
150
100
0
50
– 8.0 – 10 – 6.0 – 4.0 – 2.0 0 0.2 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (VOLTS)
TA = 125°C
25°C
– 55°C R O N ,
“ O N ” R E S I S T A N C E ( O H M S )
350
300
250
200
150
100
0
50
– 8.0 – 10 – 6.0 – 4.0 – 2.0 0 0.
Vin, INPUT VOLTAGE (
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 184/449
Figure 12. VDD = 2.5 V, VSS = – 2.5 V
R O N ,
“ O N ” R E S I S
T A N C E ( O H M S )
700
600
500
400
300
200
0
100
– 8.0 – 10 – 6.0 – 4.0 – 2.0 0 0.2 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (VOLTS)
TA = 125°C
25°C
– 55°C
Figure 13. Comparison at 2
R O N ,
“ O N ” R E S I S
T A N C E ( O H M S )
350
300
250
200
150
100
0
50
– 8.0 – 10 – 6.0 – 4.0 – 2.0 0 0.
Vin, INPUT VOLTAGE (
TA = 25°C
VD
MC14067B
APPLICATIONS INFORMATION
Figure A illustrates use of the AnalogMultiplexer/Demultiplexer. The 0–to–5 volt Digital Controlsignal is used to directly control a 5 Vp–p analog signal.
The digital control logic levels are determined by VDDand VSS. The VDD voltage is the logic high voltage; the VSSvoltage is logic low. For the example. VDD = + 5 V = logichigh at the control inputs; VSS = GND = 0 V = logic low.
The maximum analog signal level is determined by VDDand VSS. The analog voltage must swing neither higher thanVDD nor lower than VSS. The example shows a 5 Vp–p
signal which allows no margin at etransients above VDD and/or below Vthe analog channels, external diodes (as shown in Figure B. These diodes stypes able to absorb the maximum antiduring clipping.
The absolute maximum potential diand VSS is 18.0 volts. Most paramete15 V which is the recommended between VDD and VSS.
+ 5 V
VDD VSS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 185/449
Figure A. Application Example
5 Vp–p
ANALOG SIGNAL
0–TO–5 V DIGITAL
CONTROL SIGNALS
SWITCH
I/O
MC14067B
COMMON
O/I
5 Vp–p
ANALOG SIGNAL+ 5 V
EXTERNAL
CMOS
DIGITALCIRCUITRY
Figure B. External Germanium or Schottky Clipping Diodes
VDD VDD
VSS VSS
DX DX
DX DX
SWITCH
I/O
COMMON
O/I
The MC14069UB hex inverter is constructed with MOS P–channeland N–channel enhancement mode devices in a single monolithicstructure. These inverters find primary use where low power
dissipation and/or high noise immunity is desired. Each of the sixinverters is a single stage to minimize propagation delays.
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky TTL Load Over the Rated Temperature Range• Triple Diode Protection on All Inputs• Pin–for–Pin Replacement for CD4069UB• Meets JEDEC UB Specifications
http://onsem
PDIP–14
P SUFFIX
CASE 64
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 186/449
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either VSS or VDD). Unused outputs must be left open.
A = Assemb
WL or L = Wafer LYY or Y = Year
WW or W = Work W
Device Packag
ORDERING INF
MC14069UBCP PDIP–
MC14069UBD SOIC–
MC14069UBDR2 SOIC–
SOIC–14
D SUFFIX
CASE 751
TSSOP–1
DT SUFF
CASE 948
SOEIAJ–1
F SUFFIX
CASE 96
MC14069UB
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
OUT 5
IN 5
OUT 6
IN 6
VDD
OUT 4
IN 4
OUT 2
IN 2
OUT 1
IN 1
VSS
OUT 3
IN 3
CIRCUIT SCHEMATIC
(1/6 OF CIRCUIT SHOWN
LOGIC DIAGRAM
1 2
VDD = PIN 14
VDD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 187/449
13
11
9
5
3
12
10
8
6
4VDD PIN 14
VSS = PIN 7
VSS
OUTPUTINPUT*
*Double diode protection on allinputs not shown.
Figure 1. Switching Time Test Circuit and Waveforms
PULSE
GENERATOR
VDD
VSS7
INPUT
OUTPUT
CL
14
20 ns
tTHL
OUTPUT
INPUT
tPHL
90%50%10%
90%50%10%
MC14069UB
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
S mbo VDD – 55 C 25 C
Characteristic l
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 Vdc)
(VO = 9.0 Vdc)
(VO = 13.5 Vdc)
VIL
5.0
10
15
—
—
—
1.0
2.0
2.5
—
—
—
2.25
4.50
6.75
1.0
2.0
2.5
—
—
—
“1” Level
(VO = 0.5 Vdc)
(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
VIH
5.0
10
15
4.0
8.0
12.5
—
—
—
4.0
8.0
12.5
2.75
5.50
8.25
—
—
—
4
8
12
Output Drive Current(VOH = 2.5 Vdc) Source
(VOH = 4 6 Vdc)
IOH
5.0
5 0
– 3.0
– 0 64
—
—
– 2.4
– 0 51
– 4.2
– 0 88
—
—
–
– 0
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 188/449
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
5.0
10
15
– 0.64
– 1.6
– 4.2
—
—
—
– 0.51
– 1.3
– 3.4
– 0.88
– 2.25
– 8.8
—
—
—
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Gate) (CL = 50 pF)
IT 5.0
10
15
IT = (0.3 µA/kHz) f + IDD /6
IT = (0.6 µA/kHz) f + IDD /6
IT = (0.9 µA/kHz) f + IDD /6
Output Rise and Fall Times (5.)
(CL = 50 pF)tTLH, tTHL = (1.35 ns/pF) CL + 33 ns
tTLH, tTHL = (0.60 ns/pF) CL + 20 ns
tTLH, tTHL = (0.40 ns/pF) CL + 20 ns
tTLH,
tTHL 5.010
15
— —
—
— —
—
— —
—
10050
40
200100
80
— —
—
Propagation Delay Times (5.)
(CL = 50 pF)
tPLH, tPHL = (0.90 ns/pF) CL + 20 ns
tPLH, tPHL = (0.36 ns/pF) CL + 22 ns
tPLH, tPHL = (0.26 ns/pF) CL + 17 ns
tPLH,
tPHL
5.0
10
15
—
—
—
—
—
—
—
—
—
65
40
30
125
75
55
—
—
—
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
I (C ) I (50 pF) + (C 50) Vfk
Quad Exclusive “OR” and “NOR” Gates
The MC14070B quad exclusive OR gate and the MC14077B quadexclusive NOR gate are constructed with MOS P–channel andN–channel enhancement mode devices in a single monolithicstructure. These complementary MOS logic gates find primary usewhere low power dissipation and/or high noise immunity is desired.
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• All Outputs Buffered• Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky TTL Load Over the Rated Temperature Range
• Double Diode Protection on All Inputs• MC14070B — Replacement for CD4030B and CD4070B Types
http://onsem
PDIP–14
P SUFFIX
CASE 64
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 189/449
p yp• MC14077B — Replacement for CD4077B Type
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vi or V ) VDD
XX = Specific
A = Assemb
WL or L = Wafer L
YY or Y = Year
WW or W = Work W
Device Packag
ORDERING INF
MC140XXBCP PDIP–
MC140XXBD SOIC–
MC140XXBDR2 SOIC–
MC140XXBF SOEIAJ–
SOIC–14
D SUFFIX
CASE 751
SOEIAJ–1
F SUFFIXCASE 96
MC140XXBFEL SOEIAJ–
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 190/449
MC14070B, MC14077B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4
9
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
Output Drive Current(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
IOH
5.0
5.0
– 3.0
– 0.64
—
—
– 2.4
– 0.51
– 4.2
– 0.88
—
—
–
–
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 191/449
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
10
15
– 1.6
– 4.2
—
—
– 1.3
– 3.4
– 2.25
– 8.8
—
—
–
–
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0
0
2
Input Current Iin 15 — ± 0.1 — ± 0.00001 ± 0.1
Input Capacitance(Vin = 0)
Cin — — — — 5.0 7.5
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.3 µA/kHz) f + IDD
IT = (0.6 µA/kHz) f + IDD
IT = (0.9 µA/kHz) f + IDD
Output Rise and Fall Times (5.)
(CL = 50 pF)
tTLH, tTHL = (1.35 ns/pF) CL + 33 ns
tTLH, tTHL = (0.60 ns/pF) CL + 20 ns
tTLH, tTHL = (0.40 ns/pF) CL + 20 ns
tTLH,
tTHL
5.0
10
15
—
—
—
—
—
—
—
—
—
100
50
40
200
100
80
Propagation Delay Times (5.)
(CL = 50 pF)
tPLH, tPHL = (0.90 ns/pF) CL + 130ns
tPLH, tPHL = (0.36 ns/pF) CL + 57 ns
tPLH, tPHL = (0.26 ns/pF) CL + 37 ns
tPLH,
tPHL
5.0
10
15
—
—
—
—
—
—
—
—
—
175
75
55
350
150
110
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5 The formulas given are for the typical characteristics only at 25 C
The MC14076B 4–Bit Register consists of four D–type flip–flops
operating synchronously from a common clock. OR gatedoutput–disable inputs force the outputs into a high–impedance statefor use in bus organized systems. OR gated data–disable inputs causethe Q outputs to be fed back to the D inputs of the flip–flops. Thus theyare inhibited from changing state while the clocking process remainsundisturbed. An asynchronous master root is provided to clear all fourflip–flops simultaneously independent of the clock or disable inputs.
• Three–State Outputs with Gated Control Lines• Fully Independent Clock Allows Unrestricted Operation for the Two
Modes: Parallel Load and Do Nothing• Asynchronous Master Reset
http://onsem
PDIP–16
P SUFFI
CASE 64
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 192/449
• Four Bus Buffer Registers• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
1. Maximum Ratings are those values beyond which damage to the devicemay occur.
2. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
A = Assem
WL or L = Wafer
YY or Y = YearWW or W = Work
Device Packag
ORDERING INF
MC14076BCP PDIP–
MC14076BD SOIC–
MC14076BDR2 SOIC–
SOIC–1
D SUFFI
CASE 751
MC14076B
PIN ASSIGNMENT
13
14
15
16
9
10
11125
4
3
2
1
8
7
6D2
D1
D0
R
VDD
A
B
D3
Q1
B
A
VSS
C
Q3Q2
Q0
OUTPUT
DISABLE
DATA
DISABLE
BLOCK DIAGRAM
15
14
3RESET
D0
Q0
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 193/449
14
13
12
11
10
9
7
2
1
4
5
6
D0
D1
D2
D3
B
A
CLOCK
B
A
DATA
DISABLE
OUTPUT
DISABLE
VDD = PIN 16
VSS = PIN 8
Q1
Q2
Q3
FUNCTION TABLE
Inputs
Data DisableData Out ut
Reset Clock A B D Q
1 X X X X 0
0 0 X X X Qn
0 1 X X Qn
0 X 1 X Qn
0 0 0 0 0
0 0 0 1 1When either output disable A or B (or both) is (are) high the
output is disabled to the high–impedance state; however
MC14076B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9 5 Vdc)
IOH
5.0
5.0
10
– 3.0
– 0.64
1 6
—
—
– 2.4
– 0.51
1 3
– 4.2
– 0.88
2 25
—
—
–
– 0
0
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 194/449
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
10
15
– 1.6
– 4.2
—
—
– 1.3
– 3.4
– 2.25
– 8.8
—
—
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (4.) (5.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.75 µA/kHz) f + IDD
IT = (1.50 µA/kHz) f + IDD
IT = (2.25 µA/kHz) f + IDD
Three–State Leakage Current ITL 15 — ± 0.1 — ± 0.0001 ± 0.1 —
3. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe4. The formulas given are for the typical characteristics only at 25 C.5. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
MC14076B
SWITCHING CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (7.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH, tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
Clock to Q
tPLH, tPHL = (1.7 ns/pF) CL + 215 ns
tPLH, tPHL = (0.66 ns/pF) CL + 92 ns
tPLH, tPHL = (0.5 ns/pF) CL + 65 ns
tPLH, tPHL
5.0
10
15
—
—
—
300
125
90
Reset to Q
tPLH, tPHL = (1.7 ns/pF) CL + 215 ns
tPLH, tPHL = (0.66 ns/pF) CL + 92 ns
tPLH, tPHL = (0.5 ns/pF) CL + 65 ns
5.0
10
15
—
—
—
300
125
90
3–State Propagation Delay, Output “1” or “0”
to High Impedance
tPHZ, tPLZ 5.0
10
15
—
—
—
150
60
45
3–State Propagation Delay, High Impedance
to “1” or “0” Level
tPZH, tPZL 5.0
10
15
—
—
200
80
60
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 195/449
15 — 60
Clock Pulse Width tWH 5.0
10
15
260
110
80
130
55
40
Reset Pulse Width tWH 5.0
10
15
370
150
110
185
75
55Data Setup Time tsu 5.0
10
15
30
10
4
15
5
2
Data Hold Time th 5.0
10
15
130
60
50
65
30
25
Data Disable Setup Time tsu 5.0
10
15
220
80
50
110
40
25Clock Pulse Rise and Fall Time tTLH, tTHL 5.0
10
15
—
—
—
—
—
—
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
3.6
9.0
12
6. The formulas given are for the typical characteristics only at 25 C.7. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 196/449
The MC14093B Schmitt trigger is constructed with MOS
P–channel and N–channel enhancement mode devices in a singlemonolithic structure. These devices find primary use where low powerdissipation and/or high noise immunity is desired. The MC14093Bmay be used in place of the MC14011B quad 2–input NAND gate forenhanced noise immunity or to “square up” slowly changingwaveforms.
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky TTL Load Over the Rated Temperature Range
• Triple Diode Protection on All Inputs• Pin–for–Pin Compatible with CD4093• Can be Used to Replace MC14011B
http://onsem
PDIP–14
P SUFFIX
CASE 64
SOIC–14
D SUFFIX
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 197/449
Can be Used to Replace MC14011B• Independent Schmitt–Trigger at each Input
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to highstatic voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
A = Assemb
WL or L = Wafer LYY or Y = Year
WW or W = Work W
Device Packag
ORDERING INF
MC14093BCP PDIP–
MC14093BD SOIC–
MC14093BDR2 SOIC–
D SUFFIX
CASE 751
TSSOP–1
DT SUFF
CASE 948
SOEIAJ–1
F SUFFIX
CASE 96
MC14093B
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
OUTC
OUTD
IN 1D
IN 2D
VDD
IN 1C
IN 2C
OUTB
OUTA
IN 2A
IN 1A
VSS
IN 2B
IN 1B
LOGIC DIAGRAM
4
3
65
2
1
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 198/449
1311
VDD = PIN 14VSS = PIN 7
10
12
98
EQUIVALENT CIRCUIT SCHEMATIC
(1/4 OF CIRCUIT SHOWN)
MC14093B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Q i C I 5 0 0 25 0 0005 0 25
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 199/449
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, allbuffers switching)
IT 5.0
10
15
IT = (1.2 µA/kHz) f + IDD
IT = (2.4 µA/kHz) f + IDD
IT = (3.6 µA/kHz) f + IDD
Hysteresis Voltage VH† 5.0
10
15
0.3
1.2
1.6
2.0
3.4
5.0
0.3
1.2
1.6
1.1
1.7
2.1
2.0
3.4
5.0
0
1
1
Threshold Voltage
Positive–Going VT+ 5.0
10
15
2.2
4.6
6.8
3.6
7.1
10.8
2.2
4.6
6.8
2.9
5.9
8.8
3.6
7.1
10.8
2
4
6
Negative–Going VT– 5.010
15
0.92.5
4.0
2.85.2
7.4
0.92.5
4.0
1.93.9
5.8
2.85.2
7.4
02
4
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004.
MC14093B
SWITCHING CHARACTERISTICS (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (7.)
Output Rise Time tTLH 5.0
10
15
—
—
—
100
50
40
Output Fall Time tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time tPLH, tPHL 5.0
10
15
—
—
—
125
50
40
7. Data labeled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential per
PULSE
GENERATOR
VDD
OUTPUT
CLVSS7
14
INPUT
20 ns
tPHL
OUTPUT
INPUT
90%
90%50%10%
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 200/449
Figure 1. Switching Time Test Circuit and Waveforms
LVSS7 OUTPUT
tTHL
50%10%
Vout
Vin
VH VDD
VSS
VDD
VSS
(a) Schmitt Triggers will square up
(a) inputs with slow rise and fall times.
(b) A Schmitt trigger offers
(b) noise immunity in gate
VH
Vout
Vin
Figure 2. Typical Schmitt Trigger Applications
MC14093B
Figure 3. Typical Output Source
VDS, DRAIN VOLTAGE (Vdc)
– 10 – 8.0 – 6.0 – 4.0 – 2.0 0
0
– 2.0
– 4.0
– 6.0
– 8.0
– 10
I O H ,
D R A I N C U R R E N T ( m A
d c )
Figure 4. Typical Ou
VDS, DRAIN VOLTAG
0 2.0 4.0 6
10
8.0
6.0
4.0
2.0
0
I O L ,
D R A I N C U R R E N T ( m A
d c )
14
7
VGS
Vout
IOH
All unused inputs
connected to ground.All unused inputs
connected to ground.
VGS
VGS = – 5.0 Vdc
c
b
a
c
b c b
a a
– 15 Vdc – 10 Vdc
a TA = –55°C
b TA = +25°C
b TA = +125°C
a b c
a
b
c
ab
c
5.
15 Vdc
VGS = 10
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 201/449
Figure 3. Typical Output Source
Characteristics Test Circuit
Figure 4. Typical Ou
Characteristics Tes
V o u t ,
O U T P U T V O L T A G E ( V d c )
VDD
00 VDDVT– VT+
VH
Vin, INPUT VOLTAGE (Vdc)
Figure 5. Typical Transfer Characteristics
The MC14094B combines an 8–stage shift register with a data latchfor each stage and a three–state output from each latch.
Data is shifted on the positive clock transition and is shifted from theseventh stage to two serial outputs. The QS output data is for use inhigh–speed cascaded systems. The Q′S output data is shifted on thefollowing negative clock transition for use in low–speed cascadedsystems.
Data from each stage of the shift register is latched on the negativetransition of the strobe input. Data propagates through the latch whilestrobe is high.
Outputs of the eight data latches are controlled by three–statebuffers which are placed in the high–impedance state by a logic Lowon Output Enable.
• Three–State Outputs
http://onsem
PDIP–1
P SUFFI
CASE 64
SOIC–1
D SUFFI
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 202/449
• Capable of Driving Two Low–Power TTL Loads or One Low–PowerSchottky TTL Load Over the Rated Temperature Range
• Input Diode Protection• Data Latch•
Dual Outputs for Data Out on Both Positive andNegative Clock Transitions• Useful for Serial–to–Parallel Data Conversion• Pin–for–Pin Compatible with CD4094B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature(8–Second Soldering)
260 °C
Device Packag
ORDERING INF
MC14094BCP PDIP–1
MC14094BD SOIC–1
C C
D SUFFI
CASE 75
TSSOP–
DT SUFFCASE 94
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work W
SOEIAJ–
F SUFFI
CASE 96
MC14094B
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q7
Q6
Q5
OUTPUTENABLE
VDD
QS
Q′S
Q8
Q1
CLOCK
DATA
STROBE
VSS
Q4
Q3
Q2
PIN ASSIGNMENT
OutputParallel Outputs Serial Outputs
Clock Enable Strobe Data Q1 QN QS* Q′S
0 X X Z Z Q7 No Chg.
0 X X Z Z No Chg. Q7
1 0 X No Chg. No Chg. Q7 No Chg.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 203/449
1 1 0 0 QN –1 Q7 No Chg.
1 1 1 1 QN –1 Q7 No Chg.
1 1 1 No Chg. No Chg. No Chg. Q7
Z = High Impedance X = Don’t Care
* At the positive clock edge, information in the 7th shift register stage is transferred to Q8 and QS.
MC14094B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.9
9.9
14Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0
– 0
– 2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 204/449
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance(Vin = 0) Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (4.1 µA/kHz) f + IDD
IT = (14 µA/kHz) f + IDD
IT = (140 µA/kHz) f + IDD
3–State Output Leakage Current ITL 15 — ± 0.1 — ± 0.0001 ± 0.1 —
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
MC14094B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.35 ns/pF) CL + 33 ns
tTLH, tTHL = (0.6 ns/pF) CL + 20 ns
tTLH, tTHL = (0.4 ns/pF) CL + 20 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
Clock to Serial out QS
tPLH
, tPHL
= (0.90 ns/pF) CL
+ 305 ns
tPLH, tPHL = (0.36 ns/pF) CL + 107 ns
tPLH, tPHL = (0.26 ns/pF) C L + 82 ns
tPLH,
tPHL
5.0
10
15
—
—
—
350
125
95
Clock to Serial out Q’S
tPLH, tPHL = (0.90 ns/pF) CL + 350 ns
tPLH, tPHL = (0.36 ns/pF) CL + 149 ns
tPLH, tPHL = (0.26 ns/pF) CL + 62 ns
5.0
10
15
—
—
—
230
110
75
Clock to Parallel out
tPLH, tPHL = (0.90 ns/pF) CL + 375 ns
tPLH, tPHL = (0.35 ns/pF) CL + 177 ns
tPLH, tPHL = (0.26 ns/pF) CL + 122 ns
5.0
10
15
—
—
—
420
195
135
Strobe to Parallel out
tPLH, tPHL = (0.90 ns/pF) CL + 245 ns
tPLH, tPHL = (0.36 ns/pF) C L + 127 ns
tPLH tPHL (0 26 ns/pF) CL + 87 ns
5.0
10
15
—
—
—
290
145
100
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 205/449
tPLH, tPHL = (0.26 ns/pF) CL + 87 ns 15 100
Output Enable to Output
tPHZ, tPZL = (0.90 ns/pF) CL + 95 ns
tPHZ, tPZL = (0.36 ns/PF) CL + 57 ns
tPHZ, tPZL = (0.26 ns/pF) CL + 42 ns
tPHZ,
tPZL
5.0
10
15
—
—
—
140
75
55
tPLZ, tPZH = (0.90 ns/pF) CL + 180 nstPLZ, tPZH = (0.36 ns/pF) CL + 77 ns
tPLZ, tPZH = (0.26 ns/pF) CL + 57 ns
tPLZ,tPZH5.010
15
— —
—
22595
70
Setup Time
Data in to Clock
tsu 5.0
10
15
125
55
35
60
30
20
Hold Time
Clock to Data
th 5.0
10
15
0
20
20
– 40
– 10
0
Clock Pulse Width, High tWH 5.0
1015
200
10083
100
5040
Clock Rise and Fall Time tr(cl)
tf(cl)
5
10
15
—
—
—
—
—
—
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
2.5
5.0
6.0
Strobe Pulse Width tWL 5.0
10
15
200
80
70
100
40
35
7. The formulas given are for the typical characteristics only at 25 C.
MC14094B
3–STATE TEST CIRCUIT
FOR tPHZ AND tPZH
VSS
FOR tPLZ AND tPZL
VDD
1 k
OUTPUT
50 pF
O.E.
CLOCK
ST
DATA
REGISTER STAGE 1
BLOCK DIAGRAM
LATCH 1 3–STATE BUFFER
2
SERIAL
DATA IN
CLOCK CLOCK STROBE
CLOCK
CLOCK CLOCK
CLOCK
STROBE STROBE
STROBE
*
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 206/449
15
OUTPUT
ENABLE
2
3
4
5
6
7
8
REGISTER STAGE 2
REGISTER STAGE 3
REGISTER STAGE 4
REGISTER STAGE 5
REGISTER STAGE 6
REGISTER STAGE 7
REGISTER STAGE 8
LATCH 2
LATCH 3
LATCH 4
LATCH 5
LATCH 6
LATCH 7
LATCH 8
3–STATE BUFFER
3–STATE BUFFER
3–STATE BUFFER
3–STATE BUFFER
3–STATE BUFFER
3–STATE BUFFER
3–STATE BUFFER
CLOCK CLOCK STROBE STROBECLOCK
CLOCK CLOCK
CLOCK
CLOCK
CLOCK
STROBE
STROBE
CLOCK
STROBE
3
1 *Input Protection Diodes
*
*
*
MC14094B
10
DYNAMIC TIMING DIAGRAM
3
15
CLOCK
2 DATA IN
1 STROBE
OUTPUT
ENABLE
N Q1 Q7
9 QS
Q′S
tWH
50%
tsu
th
tWL
50%
tr
50% 50%
tPZHtPHZtPHLtPLHtPLH tPLZ
10%
90%90%90%
10%10%
50%
50%
50
50%
tPHLtPLHtTHLtTLH
tPLH
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 207/449
The MC14099B is an 8–bit addressable latch. Data is entered inserial form when the appropriate latch is addressed (via address pinsA0, A1, A2) and write disable is in the low state. For the MC14099B
the input is a unidirectional write only port.The data is presented in parallel at the output of the eight latchesindependently of the state of Write Disable, Write/Read or ChipEnable.
A Master Reset capability is available on both parts.
• Serial Data Input• Parallel Output• Master Reset•
Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–PowerSchottky TTL Load over the Rated Temperature Range
• MC14099B pin for pin compatible with CD4099B
http://onsem
PDIP–1
P SUFFI
CASE 64
SOIC–16
DW SUFF
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 208/449
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoidapplications of any voltage higher than maximum rated voltages to this
high impedancecircuit For proper operation V and V shouldbeconstrained
Device Packag
ORDERING INF
MC14099BCP PDIP–1
MC14099BDW SOIC–1
MC14099BDWR2 SOIC–
MC14099BF SOEIAJ–
MC14099BFEL SOEIAJ
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work W
SOEIAJ–
F SUFFI
CASE 96
DW SUFF
CASE 751
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 209/449
MC14099B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.35 ns/pF) CL + 32 ns
tTLH, tTHL = (0.6 ns/pF) CL + 20 ns
tTLH, tTHL = (0.4 ns/pF) CL + 20 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
Data to Output Q
tPHL,
tPLH 5.0
1015
—
— —
200
7550
Write Disable to Output Q 5.0
10
15
—
—
—
200
80
60
Reset to Output Q 5.0
10
15
—
—
—
175
80
65
CE to Output Q (MC14599B only) 5.0
1015
—
— —
225
10075
Propagation Delay Time, MC14599B only
Chip Enable, Write/Read to Data
tPHL,
tPLH 5.0
10
—
—
200
80
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 210/449
15 — 65
Address to Data 5.0
10
15
—
—
—
200
90
75
Pulse WidthsReset
tw(H)tw(L) 5.0
10
15
150
75
50
75
40
25
Write Disable 5.0
10
15
320
160
120
160
80
60
Set Up Time
Data to Write Disable
tsu
5.0
10
15
100
50
35
50
25
20
Hold Time
Write Disable to Data
th5.0
10
15
150
75
50
75
40
25
Set Up Time
Address to Write Disable
tsu 5.0
10
15
100
80
40
45
30
10
Removal Time
Write Disable to Address
trem 5.0
1015
0
00
– 80
– 40 – 40
MC14099B
RESET
DATA
WRITE
DISABLE
A0
A1
A2 7
6
5
4
3
2
ADDRESS
DECODER
TO
OTHER
LATCHES ZERO
SELECT
OTHER LATCHES
EACH LATCH
MC14099BFUNCTION DIAGRAM
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 211/449
A2
(M.S.B.)
7
TRUTH TABLE
Write
Disable Reset
Addressed
Latch
Unaddressed
Latches
0 0 Data Qn*
0 1 Data Reset
1 0 Qn* Qn*
1 1 Reset Reset
*Qn is previous state of latch.†Reset to zero state.
CAUTION: To avoid unintentional data changes in
Disable must be active (high) during
address inputs A0, A1, and A2.
MC14099B
SWITCHING WAVEFORMS
DATA OR
WRITE DISABLE
OUTPUT Q
RESET
OUTPUT Q
VDD
VSS
VDD
VSS
tPHL
50%
tTLH tTHL
90%
50%
10%
50%
tPLH tPHL
ADDRESS
WRITE
DISABLE
DATA 50%
50%
50%
tsu tw(L)
tsutw(H)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 212/449
OUTPUT Q
The MC14106B hex Schmitt Trigger is constructed with MOSP–channel and N–channel enhancement mode devices in a singlemonolithic structure. These devices find primary use where low power
dissipation and/or high noise immunity is desired. The MC14106Bmay be used in place of the MC14069UB hex inverter for enhancednoise immunity or to “square up” slowly changing waveforms.
• Increased Hysteresis Voltage Over the MC14584B• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Pin–for–Pin Replacement for CD40106B and MM74C14•
Can Be Used to Replace the MC14584B or MC14069UB
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
http://onsem
PDIP–14
P SUFFIX
CASE 64
SOIC–14
D SUFFIX
CASE 751
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 213/449
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
1. Maximum Ratings are those values beyond which damage to the devicemay occur.
2. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,either VSS or VDD). Unused outputs must be left open.
A = Assemb
WL or L = Wafer L
YY or Y = Year
WW or W = Work W
Device Packag
ORDERING INF
MC14106BCP PDIP–
MC14106BD SOIC–
MC14106BDR2 SOIC–
MC14106BDT TSSOP–
TSSOP–1
DT SUFF
CASE 948
MC14106BDTR2 TSSOP–
MC14106B
LOGIC DIAGRAM
13 12
10
8
6
4
2
11
9
5
3
1
VDD = PIN 14
VSS = PIN 7
EQUIVALENT CIRCUIT SCHEMATIC
(1/6 OF CIRCUIT SHOWN)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 214/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 215/449
MC14106B
SWITCHING CHARACTERISTICS (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (7.)
Output Rise Time tTLH 5.0
10
15
—
—
—
100
50
40
Output Fall Time tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time tPLH, tPHL 5.010
15
— —
—
12550
40
7. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
PULSE
GENERATOR INPUT
OUTPUT
VDD
VSS7 CL
14
20 ns
INPUT
OUTPUT
tPHL
90%50%
10%
90%50%
10%
tf tr
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 216/449
Figure 1. Switching Time Test Circuit and Waveforms
V o u t
, O U T P U T V O L T A G E ( V d c )
VDD
0VDD0
Vin, INPUT VOLTAGE (Vdc)
VT– VT+
VH
Figure 2. Typical Transfer Characteristics
MC14106B
Figure 3.
(b) A Schmitt trigger offers max
noise immunity in gate applica
Vin Vout
VH
Vin
Vout
VDD
VSS
VDD
VSS
Vin
Vout
VH
(a) Schmitt Triggers will square up
inputs with slow rise and fall times.
APPLICATIONS
VDD VDD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 217/449
Figure 4. Monostable Multivibrator
R
C
Vout
tw
Rs Rs
C
R
Useful as Pushbutton/Keyboard Debounce Circuit.
MC14106B
Figure 5. Astable Multivibrator
C
R
1f
t1
t2
* t1 RClnVT
VT –
* t2 RClnVDD – VT –
VDD – VT
1f
RClnVDD – VT –
VDD – VT
VT
VT –
*t1 + t2 tPHL + tPLH
Figure 6. Integrato
R AVin
C
VSS
VT+
VDD
Vin
VSS
VT+
VDD
A
VSS
VT+
VDD
Vout
Useful in discriminating against short puls
C
Vin
Vin
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 218/449
Figure 7. Differentiator Figure 8. Positive Edge Time D
R
– EDGE + EDGE
VDD
+EDGE
– EDGE
tw
tw = RC lnVDD
VT+
Useful as an edge detector circuit.
C C
R R
Vin
The MC14174B hex type D flip–flop is constructed with MOSP–channel and N–channel enhancement mode devices in a singlemonolithic structure. Data on the D inputs which meets the setup timerequirements is transferred to the Q outputs on the positive edge of theclock pulse. All six flip–flops share common clock and reset inputs.The reset is active low, and independent of the clock.
• Static Operation• All Inputs and Outputs Buffered• Diode Protection on All Inputs• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky TTL Load over the Rated Temperature Range• Functional Equivalent to TTL 74174
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
http://onsem
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 219/449
( g SS) ( )
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range(DC or Transient) –0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature(8–Second Soldering) 260°C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14174BCP PDIP–
MC14174BD SOIC–
MC14174BDR2 SOIC–
1. For ordering information
SOEIAJ–
F SUFFI
CASE 96
MC14174BF SOEIAJ–
MC14174BFEL SOEIAJ–
MC14174B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q4
D4
D5
VDD
C
Q3
D3
D1
D0
Q0
R
VSS
Q2
D2
Q1
Q5
BLOCK DIAGRAM
9
1
3
4
6
2
7
CLOCK
RESET
D0
D1
D2
Q2
5Q1
Q0
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 220/449
6
11
13
14
10
15
D2
D3
D4
D5
VDD = PIN 16
VSS = PIN 8
Q3
Q4 12
Q5
TRUTH TABLE
(Positive Logic)
Inputs Output
Clock Data Reset Q
0 1 0
1 1 1
X 1 Q
X X 0 0
X = Don’t Care
No
Change
MC14174B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.05.0
10
15
– 3.0 – 0.64
– 1.6
– 4.2
— —
—
—
– 2.4 – 0.51
– 1.3
– 3.4
– 4.2 – 0.88
– 2.25
– 8.8
— —
—
—
– – 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
IOL 5.0
10
0.64
1.6
—
—
0.51
1.3
0.88
2.25
—
—
0.
0
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 221/449
(VOL = 1.5 Vdc) 15 4.2 — 3.4 8.8 — 2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (1.1 µA/kHz) f + IDD
IT = (2.3 µA/kHz) f + IDD
IT = (3.7 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.003.
MC14174B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
VDDAll Types
Characteristic Symbol Vdc
Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.35 ns/pF) CL + 32 ns
tTLH, tTHL = (0.6 ns/pF) CL + 20 ns
tTLH, tTHL = (0.4 ns/pF) CL + 20 ns
tTLH, tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time — Clock to Q
tPLH, tPHL = (0.9 ns/pF) CL + 165 ns
tPLH
, tPHL
= (0.36 ns/pF) CL
+ 64 ns
tPLH, tPHL = (0.26 ns/pF) CL + 52 ns
tPLH, tPHL
5.0
10
15
—
—
—
210
85
65
Propagation Delay Time — Reset to Q
tPHL = (0.9 ns/pF) CL + 205 ns
tPHL = (0.36 ns/pF) CL + 79 ns
tPHL = (0.26 ns/pF) CL + 62 ns
tPHL
5.0
10
15
—
—
—
250
100
75
Clock Pulse Width tWH 5.0
10
15
150
90
70
75
45
35
Reset Pulse Width
tWL 5.0
1015
200
10080
100
5040
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
7.0
12
15.5
Clock Pulse Rise and Fall Time tTLH, tTHL 5.0
10
—
—
—
—
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 222/449
10
15
—
—
Data Setup Time tsu 5.0
10
15
40
20
15
20
10
0
Data Hold Time th 5.0
10
15
80
40
30
40
20
15
Reset Removal Time trem 5.0
10
15
250
100
80
125
50
40
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14174B
FUNCTIONAL BLOCK DIAGRAM
TIMING DIAGRAM
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 223/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 224/449
MC14175B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
D2
D3
Q3
VDD
C
Q2
Q2
D0
Q0
Q0
R
VSS
Q1
Q1
D1
Q3
BLOCK DIAGRAM
9
1
4
5
2
7
10
CLOCK
RESET
D0
D1
3
Q1
Q0
6
Q0
Q1
Q2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 225/449
5
12
13
15
D1
D2
D3
VDD = PIN 16
VSS = PIN 8
Q3
Q2 11
Q3 14
TRUTH TABLE
Inputs OutputsClock Data Reset Q Q
0 1 0 1
1 1 1 0
X 1 Q Q
X X 0 0 1
X = Don’t Care
No
Change
MC14175B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol
Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.05.0
10
15
– 3.0 – 0.64
– 1.6
– 4.2
— —
—
—
– 2.4 – 0.51
– 1.3
– 3.4
– 4.2 – 0.88
– 2.25
– 8.8
— —
—
—
– – 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 226/449
( OL )
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (1.7 µA/kHz) f + IDD
IT = (3.4 µA/kHz) f + IDD
IT = (5.0 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 227/449
MC14175B
FUNCTIONAL BLOCK DIAGRAM
TIMING DIAGRAM
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 228/449
The MC14490 is constructed with complementary MOSenhancement mode devices, and is used for the elimination of
extraneous level changes that result when interfacing with mechanicalcontacts. The digital contact bounce eliminator circuit takes an inputsignal from a bouncing contact and generates a clean digital signalfour clock periods after the input has stabilized. The bounce eliminatorcircuit will remove bounce on both the “make” and the “break” of acontact closure. The clock for operation of the MC14490 is derivedfrom an internal R–C oscillator which requires only an externalcapacitor to adjust for the desired operating frequency (bounce delay).The clock may also be driven from an external clock source or the
oscillator of another MC14490 (see Figure 5).NOTE: Immediately after power–up, the outputs of the MC14490are in indeterminate states.
• Diode Protection on All Inputs• Six Debouncers Per Package• Internal Pullups on All Data Inputs
http://onsem
PDIP–16
P SUFFI
CASE 64
SOIC–16
DW SUFF
CASE 751
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 229/449
• Can Be Used as a Digital Integrator, System Synchronizer, or DelayLine
• Internal Oscillator (R–C), or External Clock Source• TTL Compatible Data Inputs/Outputs• Single Line Input, Debounces Both “Make” and “Break” Contacts• Does Not Require “Form C” (Single Pole Double Throw) Input
Signal• Cascadable for Longer Time Delays• Schmitt Trigger on Clock Input (Pin 7)• Supply Voltage Range = 3.0 V to 18 V
• Chip Complexity: 546 FETs or 136.5 Equivalent Gates
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin Input Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation 500 mW
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14490DW SOIC–
MC14490DWR2 SOIC–
MC14490F SOEIAJ–
1. For ordering information the SOIC packages, plea
MC14490FEL SOEIAJ–
MC14490P PDIP–
SOEIAJ–
F SUFFICASE 96
MC14490
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Din
Cout
Bin
VDD
OSCout
Fin
Eout
Dout
Cin
Bout
Ain
VSS
OSCin
Fout
Ein
Aout
BLOCK DIAGRAM
Ain 1
OSCin 7
+VDD
φ1OSCILLATOR
AND
TWO PHASE
DATA
SHIFT LOAD
4–BIT STATIC SHIFT REGISTER1/2–BIT
DELAY
φ1 φ2φ1 φ2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 230/449
OSCout 9
Bin 14
Cin 3
Din 12
Ein 5
Fin 10
φ2
TWO–PHASE
CLOCK GENERATORφ1 φ2
φ1 φ2
φ1 φ2
φ1 φ2
φ1 φ2
2 B
13 C
4 D
11 E
6 F
IDENTICAL TO ABOVE STAGE
IDENTICAL TO ABOVE STAGE
IDENTICAL TO ABOVE STAGE
IDENTICAL TO ABOVE STAGE
IDENTICAL TO ABOVE STAGE
MC14490
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc
Min Max Min Typ (4.) Max M
Output Voltage “0” LevelVin = VDD or 0
VOL 5.01015
— — —
0.050.050.05
— — —
000
0.050.050.05
— — —
“1” LevelVin = 0 or VDD
VOH 5.01015
4.959.9514.95
— — —
4.959.9514.95
5.01015
— — —
4.9.14
Input Voltage “0” Level(VO = 4.5 or 0.5 Vdc)(VO = 9.0 or 1.0 Vdc)(VO = 13.5 or 1.5 Vdc)
VIL5.01015
— — —
1.53.04.0
— — —
2.254.506.75
1.53.04.0
— — —
(VO = 0.5 or 4.5 Vdc) “1 Level”(VO = 1.0 or 9.0 Vdc)(VO = 1.5 or 13.5 Vdc)
VIH 5.01015
3.57.011
— — —
3.57.011
2.755.508.25
— — —
371
Output Drive CurrentOscillator Output Source
(VOH = 2.5 V)
(VOH = 4.6 V)(VOH = 9.5 V)(VOH = 13.5 V)
IOH
5.0
5.01015
– 0.6
– 0.12 – 0.23 – 1.4
—
— — —
– 0.5
– 0.1 – 0.2 – 1.2
– 1.5
– 0.3 – 0.8 – 3.0
—
— — —
– 0
– 0 – 0 –
Debounce Outputs(VOH = 2.5 V)(VOH = 4.6 V)(VOH = 9.5 V)(VOH = 13.5 V)
5.05.01015
– 0.9 – 0.19 – 0.6
1.8
— — — —
– 0.75 – 0.16 – 0.5 – 1.5
– 2.2 – 0.46 – 1.2 – 4.5
— — — —
– 0 – 0 – 0 –
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 231/449
Oscillator Output Sink(VOL = 0.4 V)
(VOL = 0.5 V)(VOL = 1.5 V)
IOL
5.01015
0.360.94.2
— — —
0.30.753.5
0.92.310
— — —
0.02
Debounce Outputs(VOL = 0.4 V)(VOL = 0.5 V)(VOL = 1.5 V)
5.01015
2.64.012
— — —
2.23.310
4.09.035
— — —
128
Input CurrentDebounce Inputs (Vin = VDD)
IIH 15 — 2.0 — 0.2 2.0 —
Input Current Oscillator — Pin 7(Vin = VSS or VDD)
Iin 15 — ± 620 — ± 255 ± 400 —
Pullup Resistor Source CurrentDebounce Inputs(Vin = VSS)
IIL 5.01015
175340505
3757401100
140280415
190380570
255500750
7142
Input Capacitance Cin — — — — 5.0 7.5 —
Quiescent Current(Vin = VSS or VDD, Iout = 0 µA)
ISS 5.01015
— — —
150280840
— — —
4090
225
100225650
— — —
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14490
SWITCHING CHARACTERISTICS(5.)
(CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (6.)
Output Rise Time
All Outputs
tTLH 5.0
10
15
—
—
—
180
90
65
Output Fall Time Oscil lator Output
tTHL
5.0
10
15
—
—
—
100
50
40
Debounce Outputs tTHL 5.0
1015
—
— —
60
3020
Propagation Delay Time
Oscillator Input to Debounce Outputs
tPHL 5.0
10
15
—
—
—
285
120
95
tPLH 5.0
10
15
—
—
—
370
160
120
Clock Frequency (50% Duly Cycle)
(External Clock)
fcl 5.0
10
15
—
—
—
2.8
6
9
Setup Time (See Figure 1) tsu 5.0
10
15
100
80
60
50
40
30
Maximum External Clock Input
Rise and Fall Time
Oscillator Input
tr, tf 5.0
10
15
No Limit
O ill t F f t
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 232/449
Oscillator Frequency
OSCout
Cext ≥ 100 pF*
Note: These equations are intended to be a design guide.
Laboratory experimentation may be required. Formulas
are typically ± 15% of actual frequencies.
fosc, typ
5.0
10
15
5. The formulas given are for the typical characteristics only at 25 C.6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
*POWER–DOWN CONSIDERATIONS
Large values of Cext may cause problems when powering down the MC14490 because of the amount capacitor. When a system containing this device is powered down, the capacitor may discharge throug
diodes at Pin 7 or the parasitic diodes at Pin 9. Current through these internal diodes must be limited toturn–off time of the power supply must not be faster than t = (VDD – VSS) Cext / (10 mA). For exampV and Cext = 1µF, the power supply must turn off no faster than t = (15 V) (1µF)/10 mA = 1.5 ms. This isbecause power supplies are heavily filtered and cannot discharge at this rate.
When a more rapid decrease of the power supply to zero volts occurs, the MC14490 may sustain dpossibility, use external clamping diodes, D1 and D2, connected as shown in Figure 2.
OSCin
Aout
VDD
0 V50%
90%
50% 10%t
D1 DCext
tPLH
VDD
MC14490
THEORY OF OPERATIONThe MC14490 Hex Contact Bounce Eliminator is
basically a digital integrator. The circuit can integrate bothup and down. This enables the circuit to eliminate bounce onboth the leading and trailing edges of the signal, shown in thetiming diagram of Figure 3.
Each of the six Bounce Eliminators is composed of a4–1/2–bit register (the integrator) and logic to compare theinput with the contents of the shift register, as shown inFigure 4. The shift register requires a series of timing pulsesin order to shift the input signal into each shift registerlocation. These timing pulses (the clock signal) arerepresented in the upper waveform of Figure 3. Each of thesix Bounce Eliminator circuits has an internal resistor asshown in Figure 4. A pullup resistor was incorporated ratherthan a pulldown resistor in order to implement switchedground input signals, such as those coming from relaycontacts and push buttons. By switching ground, rather thana power supply lead, system faults (such as shorts to groundon the signal input leads) will not cause excessive currentsin the wiring and contacts. Signal lead shorts to ground aremuch more probable than shorts to a power supply lead.
When the relay contact is closed, (see Figure 4) the lowlevel is inverted, and the shift register is loaded with a highon each positive edge of the clock signal. To understand the
After some time period of N clock opened and at N+1 a low is loaded intN+1, when the input bounces low, alAt N+2 nothing happens because thelow and all bits of the shift register aand thereafter the input signal is a higpositive edge of N+ 6 the output goes lows being shifted into the shift regis
Assuming the input signal is long through the Bounce Eliminator, the olonger or shorter than the clean inpuone clock period.
The amount of time distortion beoutput signals is a function of the characteristics on the edges of the inpfrequency. Since most relay contacwhen making as compared to breakicounting bounce period, will be greatof the input signal than on the trailing signal will be shorter than the input sedge bounce is included in the overal
The only requirement on the clockobtain a bounce free output signal is tdo not occur while the input signa
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 233/449
p g goperation, we assume all bits of the shift register are loadedwith lows and the output is at a high level.
At clock edge 1 (Figure 3) the input has gone low and ahigh has been loaded into the first bit or storage location of the shift register. Just after the positive edge of clock 1, theinput signal has bounced back to a high. This causes the shiftregister to be reset to lows in all four bits — thus starting thetiming sequence over again.
During clock edges 3 to 6 the input signal has stayed low.Thus, a high has been shifted into all four shift register bitsand, as shown, the output goes low during the positive edgeof clock pulse 6.
It should be noted that there is a 3–1/2 to 4–1/2 clockperiod delay between the clean input signal and outputsignal. In this example there is a delay of 3.8 clock periodsfrom the beginning of the clean input signal.
p gReferring to Figure 3, a false state is seat the beginning of the input signal. low three times before it finally settlestate. The first three low pulses are ref
If the user has an available clockfrequency, it may be used by connecinput (pin 7). However, if an externalthe user can place a small capacitorinput and output pins in order to starsource (as shown in Figure 4). Thoscillator output pin may then be MC14490 Bounce Eliminator packagMC14490, a large number of signals cthe requirement of only one small caHex Bounce Eliminator packages.
OSCin OR OSCout
NN + 5N + 3N + 1654321
MC14490
Figure 4. Typical “Form A” Contact Debounce Circuit
(Only One Debouncer Shown)
1/2 BIT
DELAY
OSCILLATOR
AND
TWO–PHASE
CLOCK GENERATOR
Cext
OSCout
OSCin
“FORM A”
CONTACT
Ain1
9
7φ1
φ2
DATA
SHIFT LOAD
4–BIT STATIC SHIFT REGISTER
φ1 φ2
φ1 φ2
+VDD PULLUP RESISTOR
(INTERNAL)
OPERATING CHARACTERISTICS
The single most important characteristic of the MC14490is that it works with a single signal lead as an input, makingit directly compatible with mechanical contacts (Form A
and B).The circuit has a built–in pullup resistor on each input.
The worst case value of the pullup resistor (determined fromthe Electrical Characteristics table) is used to calculate thecontact wetting current. If more contact current is required,an external resistor may be connected between VDD and theinput.
paralleled standard gates or by the Mbuffers.
The clock input circuit (pin 7) has S
such that proper clocking will occurclock edges, eliminating any need foaddition, other MC14490 oscillator from a single oscillator output buffereFigure 5). Up to six MC14490s maybuffer.
The MC14490 is TTL compatible
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 234/449
Because of the built–in pullup resistors, the inputs cannotbe driven with a single standard CMOS gate when VDD is
below 5 V. At this voltage, the input should be driven with
the outputs. When VDD is at 4.5 V, thsink 1.6 mA at 0.4 V. The inputs can
a result of the internal input pullup re
FROM CONTACTS MC14490TO SYSTEM
LOGIC
OSCin OSCout
Cext1/6 MC14050
97
OSCin 7 9 OSCout
NO CONNECTIO
FROM
CONTACTS
TO SYSTEM
LOGICMC14490
NO CONNECTIO9 OSCoutOSCin 7
FROM CONTACTS MC14490TO SYSTEM
LOGIC
MC14490
TYPICAL APPLICATIONS
ASYMMETRICAL TIMING
In applications where different leading and trailing edgedelays are required (such as a fast attack/slow release timer.)Clocks of different frequencies can be gated into theMC14490 as shown in Figure 6. In order to produce a slowattack/fast release circuit leads A and B should beinterchanged. The clock out lead can then be used to feedclock signals to the other MC14490 packages where the
asymmetrical input/output timing is required.
IN OUT
OSCout
MC14011B
OSCin
A B
fC/NEXTERNAL
CLOCK÷ N
fC
MC14490
MULTIPLE TIMING SIGNALS
As shown in Figure 8, the Bounce Ebe connected in series. In this configdelayed by four clock periods relativeThis configuration may be used to gesignals such as a delay line, for progroperations.
One application of the above is sho
it is required to have a single pulsoperation (make) of the push button only requires the series connectiEliminator circuits, one inverter, and to generate the signal AB as shown insignal AB is four clock periods in leswitched to the A output, the pulse Aupon release or break of the contact. additional parts many different pulses
be generated.
14
1
B.E. 2
B.E. 1Ain
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 235/449
Figure 6. Fast Attack/Slow Release Circuit
LATCHED OUTPUT
The contents of the Bounce Eliminator can be latched byusing several extra gates as shown in Figure 7. If the latchlead is high the clock will be stopped when the output goeslow. This will hold the output low even though the input hasreturned to the high state. Any time the clock is stopped theoutputs will be representative of the input signal four clock
periods earlier.
IN OUT
OSCout
MC14011B
OSCin
MC14490
CLOCK
10
5
12
3
7OSCin CLOCK
B.E. 6
B.E. 5
B.E. 4
B.E. 3
Bin
Cin
Din
Ein
Fin
MC14490
Figure 9. Single Pulse Output Circuit
IN
IN
A
OUT
OUT
B
A
BAB
A ≡ ACTIVE LOW
B ≡ ACTIVE LOW
BE 2
BE 1
OSCin OR
OSCout
INPUT
A
B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 236/449
Figure 10. Multiple Output Signal Timing Diagram
C
D
E
F
AB
AB
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 237/449
MC14503B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
IN 5
OUT 6
IN 6
VDD
OUT 4
IN 4
OUT 5
IN 2
OUT 1
IN 1
DIS A
VSS
OUT 3
IN 3
OUT 2
DIS B
LOGIC DIAGRAMTRUTH TABLE
Appropriate
DisableInn Input Outn
0 0 0
1 0 1
X 1 High
Impedance
X = Don’t Care
DISABLE B
15
12
14
2
4
6
IN 5
IN 6
IN 1
IN 2
IN
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 238/449
6
10
1
IN 3
IN 4
DISABLE A
VDD = PIN 16
VSS = PIN 8
CIRCUIT DIAGRAM
* INn
*DISABLE
* INPUT VSS
VDD
OUTn
ONE OF TWO/FOUR BUFFERS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 239/449
MC14503B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
VDDAll Type
Characteristic Symbol
VCC Typ (8.)
Output Rise Time
tTLH = (0.5 ns/pF) CL + 20 ns
tTLH = (0.3 ns/pF) CL + 8.0 ns
tTLH = (0.2 ns/pF) CL + 8.0 ns
tTLH
5.0
10
15
45
23
18
Output Fall Time
tTHL = (0.5 ns/pF) CL + 20 ns
tTHL = (0.3 ns/pF) CL + 8.0 nstTHL = (0.2 ns/pF) CL + 8.0 ns
tTHL
5.0
1015
45
2318
Turn–Off Delay Time, all Outputs
tPLH = (0.3 ns/pF) CL + 60 ns
tPLH = (0.15 ns/pF) CL + 27 ns
tPLH = (0.1 ns/pF) CL + 20 ns
tPLH
5.0
10
15
75
35
25
Turn–On Delay Time, all Outputs
tPHL = (0.3 ns/pF) CL + 60 ns
tPHL = (0.15 ns/pF) CL + 27 ns
tPHL = (0.1 ns/pF) CL + 20 ns
tPHL
5.0
10
15
75
35
25
3–State Propagation Delay Time
Output “1” to High Impedance
tPHZ 5.0
10
15
75
40
35
Output “0” to High Impedance tPLZ 5.0
10
15
80
40
35
High Impedance to “1” Level tPZH 5.0
10
65
25
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 240/449
0
15
5
20
High Impedance to “0” Level tPZL 5.0
10
15
100
35
25
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
Figure 1. Switching Time Test Circuit and Waveforms(tTLH, tTHL, tPHL, and tPLH)
PULSE
GENERATOR
DISABLE
INPUT
INPUT
VDD
16
VSS CL
OUTPUT
20 ns
tTLH
tPLH
90%5OUTPUT
INPUT
tPLH
90%50%
MC14503B
Figure 2. 3–State AC Test Circuit and Waveforms
(tPLZ, tPHZ, tPZH, tPZL)
PULSEGENERATOR
DISABLE INPUT
16
VSS
OUTPUT
20 ns 20 nsVDD
50%90%
VDD
1 k
8
INPUT
tPHZ, tPZH CIRCUIT
PULSEGENERATOR
DISABLE INPUT
VSS8
16
INPUT
CL
VDD
VSS
VOH
VOL
≈ VOL + 0.05 V
≈ VOH – 0.15 V
10%
90%
10%
90%
10%
tPLZ
tPHZ tPZH
tPZL
OUTPUT FOR tPZH, tPZL CIRCUIT
OUTPUT FOR tPHZ, tPLZ CIRCUIT
DISABLE INPUT
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 241/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 242/449
MC14504B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Eout
MODE
Fin
Fout
VDD
Din
Dout
Ein
Bout
Ain
Aout
VCC
VSS
Cin
Cout
Bin
LOGIC DIAGRAM
INPUT
VDD
OUTPUTLEVEL
SHIFTER
MODE
VCC
TTL/CMOS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 243/449
MODEMODE SELECT
Mode Select
Input Logic
Levels
Output Logic
Levels
1 (VCC) TTL CMOS
0 (VSS) CMOS CMOS
1/6 of package shown.
MC14504B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
V V – 55 C 25 C
Characteristic Symbol Vdc Vdc Min Max Min Typ (4.) Max
Output Voltage “0” LevelVin = 0 V
“ ”
VOL — — —
5.0101 5
— — —
0.050.050.05
— — —
000
0.050.050.05
eveVin = VCC
VOH — — —
5.01015
4.959.9514.95
— — —
4.959.9514.95
5.01015
— — —
Input Voltage “0” Level(VOL = 1.0 Vdc) TTL–CMOS(VOL = 1.5 Vdc) TTL–CMOS(VOL = 1.0 Vdc) CMOS–CMOS(VOL = 1.5 Vdc) CMOS–CMOS(VOL = 1.5 Vdc) CMOS–CMOS
VIL5.05.05.05.010
1015101515
— — — — —
0.80.81.51.53.0
— — — — —
1.31.3
2.252.254.5
0.80.81.51.53.0
Input Voltage “1” Level(VOH = 9.0 Vdc) TTL–CMOS(VOH = 13.5 Vdc) TTL–CMOS(VOH = 9.0 Vdc) CMOS–CMOS(VOH = 13.5 Vdc) CMOS–CMOS
(VOH = 13.5 Vdc) CMOS–CMOS
VIH5.05.05.05.0
10
10151015
15
2.02.03.63.6
7.1
— — — —
—
2.02.03.53.5
7.0
1.51.5
2.752.75
5.5
— — — —
—
Output Drive Current(VOH = 2.5 Vdc) Source(VOH = 4.6 Vdc)(VOH = 9.5 Vdc)(VOH = 13.5 Vdc)
IOH — — — —
5.05.01015
– 3.0 –0.64 – 1.6 – 4.2
— — — —
– 2.4 –0.51 – 1.3 – 3.4
– 4.2 – 0.88 – 2.25 – 8.8
— — — —
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL — ——
5.01015
0.641.64.2
— ——
0.511.33.4
0.882.258.8
— ——
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 244/449
( OL ) 15 4.2 3.4 8.8
Input Current Iin — 15 — ± 0.1 — ±0.00001 ± 0.1
Input Capacitance (Vin = 0) Cin — — — — — 5.0 7.5
Quiescent Current(Per Package)CMOS–CMOS Mode
IDD orICC
— — —
5.01015
— — —
0.050.100.20
— — —
0.00050.00100.0015
0.050.100.20
Quiescent Current(Per Package)TTL–CMOS Mode
IDD 5.05.05.0
5.01015
— — —
0.51.02.0
— — —
0.00050.00100.0015
0.51.02.0
Quiescent Current
(Per Package)TTL–CMOS Mode
ICC 5.0
5.05.0
5.0
1015
—
— —
5.0
5.05.0
—
— —
2.5
2.52.5
5.0
5.05.0
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14504B
SWITCHING CHARACTERISTICS (CL = 50 pF, TA = 25 C)
VCC VDDLimit
Characteristic Symbol Shifting Mode Vdc
Vdc Min Typ (5
Propagation Delay, High to Low tPHL TTL – CMOS
VDD > VCC
5.0
5.0
10
15
—
—
140
140
CMOS – CMOS
VDD > VCC
5.0
5.0
10
10
15
15
—
—
—
120
120
70
CMOS – CMOS
VCC > VDD
10
15
15
5.0
5.0
10
—
—
—
185
185
175Propagation Delay, Low to High tPLH TTL – CMOS
VDD > VCC
5.0
5.0
10
15
—
—
170
160
CMOS – CMOS
VDD > VCC
5.0
5.0
10
10
15
15
—
—
—
170
170
100
CMOS – CMOS
VCC > VDD
10
15
15
5.0
5.0
10
—
—
—
275
275
145
Output Rise and Fall Time tTLH, tTHL ALL —
— —
5.0
1015
—
— —
100
5040
5. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 245/449
MC14504B
Figure 1. Input Switchpoint CMOS to CMOS Mode Figure 2. Input Switchpoint TT
20151050
VDD, SUPPLY VOLTAGE (Vdc)
7
6
5
4
3
2
1
0
V S p ,
I N P
U T S W I T C H P O I N T V O L T A G E ( V d c )
1050
VDD, SUPPLY VOLTA
7
6
5
4
3
2
1
0
V S p ,
I N P
U T S W I T C H P O I N T V O L T A G E ( V d c )
VCC = 10 V
VCC = 5 V
VCC
=
, S U P P L Y V O L T A G E ( V d c )
20
15
10
, S U P P L Y V O L T A G E ( V d c )
20
15
10
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 246/449
Figure 3. Operating Boundary CMOS to CMOS Mode Figure 4. Operating Boundary T
V D D
5
0
1050
VCC, SUPPLY VOLTA
V D D
5
0
20151050
VCC, SUPPLY VOLTAGE (Vdc)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 247/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 248/449
MC14511B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (5.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.1
9.1
14.1
—
—
—
4.1
9.1
14.1
4.57
9.58
14.59
—
—
—
4
9
14
Input Voltage # “0” Level(VO = 3.8 or 0.5 Vdc)
(VO = 8.8 or 1.0 Vdc)
(VO = 13.8 or 1.5 Vdc)
VIL5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 3.8 Vdc)
(VO = 1.0 or 8.8 Vdc)
(VO = 1.5 or 13.8 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Voltage
(IOH = 0 mA) Source
(IOH = 5.0 mA)(IOH = 10 mA)
(IOH = 15 mA)
(IOH = 20 mA)
(IOH = 25 mA)
VOH
5.0 4.1
—3.9
—
3.4
—
—
— —
—
—
—
4.1
—3.9
—
3.4
—
4.57
4.244.12
3.94
3.70
3.54
—
— —
—
—
—
4
—3
—
3
—
(IOH = 0 mA)
(IOH = 5.0 mA)
(IOH = 10 mA)
(IOH = 15 mA)
(IOH = 20 mA)
10 9.1
—
9.0
—
8.6
—
—
—
—
—
9.1
—
9.0
—
8.6
9.58
9.26
9.17
9.04
8.90
—
—
—
—
—
9
—
8
—
8
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 249/449
( OH )
(IOH = 25 mA) — — — 8.70 — —
(IOH = 0 mA)
(IOH = 5.0 mA)
(IOH = 10 mA)
(IOH = 15 mA)
(IOH = 20 mA)
(IOH = 25 mA)
15 14.1
—
14
—
13.6
—
—
—
—
—
—
—
14.1
—
14
—
13.6
—
14.59
14.27
14.18
14.07
13.95
13.70
—
—
—
—
—
—
14
—
13
—
13
—
Output Drive Current
(VOL = 0.4 V) Sink
(VOL = 0.5 V)
(VOL = 1.5 V)
IOL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package) Vin = 0 or VDD,
Iout = 0 µA
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (6.) (7.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
IT 5.0
10
15
IT = (1.9 µA/kHz) f + IDD
IT = (3.8 µA/kHz) f + IDD
IT = (5.7 µA/kHz) f + IDD
MC14511B
SWITCHING CHARACTERISTICS (8.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ
Output Rise Time
tTLH = (0.40 ns/pF) CL + 20 ns
tTLH = (0.25 ns/pF) CL + 17.5 ns
tTLH = (0.20 ns/pF) CL + 15 ns
tTLH
5.0
10
15
—
—
—
40
30
25
Output Fall Time
tTHL = (1.5 ns/pF) CL + 50 ns
tTHL = (0.75 ns/pF) CL + 37.5 ns
tTHL = (0.55 ns/pF) CL + 37.5 ns
tTHL
5.0
10
15
—
—
—
125
75
65
Data Propagation Delay Time
tPLH = (0.40 ns/pF) CL + 620 ns
tPLH = (0.25 ns/pF) CL + 237.5 ns
tPLH = (0.20 ns/pF) CL + 165 ns
tPLH
5.0
10
15
—
—
—
640
250
175
tPHL = (1.3 ns/pF) CL + 655 ns
tPHL = (0.60 ns/pF) CL + 260 ns
tPHL = (0.35 ns/pF) CL + 182.5 ns
tPHL 5.0
10
15
—
—
—
720
290
200
Blank Propagation Delay Time
tPLH = (0.30 ns/pF) CL + 585 nstPLH = (0.25 ns/pF) CL + 187.5 ns
tPLH = (0.15 ns/pF) CL + 142.5 ns
tPLH
5.0I0
15
— —
—
600200
150
tPHL = (0.85 ns/pF) CL + 442.5 ns
tPHL = (0.45 ns/pF) CL + 177.5 ns
tPHL = (0.35 ns/pF) CL + 142.5 ns
tPHL 5.0
10
15
—
—
—
485
200
160
Lamp Test Propagation Delay Time
tPLH = (0.45 ns/pF) CL + 290.5 ns
tPLH = (0.25 ns/pF) CL + 112.5 ns
tPLH
5.0
10
15
—
—
313
125
90
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 250/449
tPLH = (0.20 ns/pF) CL + 80 ns15 — 90
tPHL = (1.3 ns/pF) CL + 248 ns
tPHL = (0.45 ns/pF) CL + 102.5 ns
tPHL = (0.35 ns/pF) CL + 72.5 ns
tPHL 5.0
10
15
—
—
—
313
125
90
Setup Time tsu 5.0
10
15
100
40
30
—
—
—
Hold Time th 5.0
10
15
60
40
30
—
—
—Latch Enable Pulse Width tWL 5.0
10
15
520
220
130
260
110
65
8. The formulas given are for the typical characteristics only.
MC14511B
Figure 1. Dynamic Power Dissipation Signal Waveforms
Input LE low, and Inputs D, BI and LT high.
f in respect to a system clock.All outputs connected to respective CL loads.
20 ns 20 nsVDD
VSS
VOH
VOL
90%50%
10%
50%
A, B, AND C
ANY OUTPUT
50% DUTY CYCLE
12f
20 ns 20 nsVDD90%
INPUT C
(a) Inputs D and LE low, and Inputs A, B, BI and LT high.
VSS
VOH
VOL
50%10%
OUTPUT g
tPLH tPHL
90%
10%50%
tTLH tTHL
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 251/449
(b) Input D low, Inputs A, B, BI and LT high.
20 ns
10%
90%
50%
VDD
VSS
VDD
VSS
VOH
VOL
thtsu
50%INPUT C
OUTPUT g
LE
20 ns 20 nsV
MC14511B
CONNECTIONS TO VARIOUS DISPLAY READOUTS
COMMON
CATHODE LED
≈ 1.7 V
VDD
VSS
VDD
COMMON
ANODE LED
VSS
LIGHT EMITTING DIODE (LED) READOUT
INCANDESCENT READOUT FLUORESCENT READ
VDD VDD
**
VDD
DIRECT
(LOW BRI
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 252/449
GAS DISCHARGE READOUT LIQUID CRYSTAL (LCD) R
VSSVSS
(CAUTION: Maximum working voltag
VDD
APPROPRIATE
VOLTAGE VDD
MC14511B
LOGIC DIAGRAM
LE 5
D 6
C 2
B 1
A 7
VDD = PIN 16
VSS = PIN 8
BI 4
LT 3
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 253/449
The MC14512B is an 8–channel data selector constructed withMOS P–channel and N–channel enhancement mode devices in asingle monolithic structure. This data selector finds primaryapplication in signal multiplexing functions. It may also be used for
data routing, digital signal switching, signal gating, and numbersequence generation.
• Diode Protection on All Inputs• Single Supply Operation• 3–State Output (Logic “1”, Logic “0”, High Impedance)• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
http://onsem
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 254/449
Iin, Iout Input or Output Current(DC or Transient) per Pin ± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either VSS or VDD). Unused outputs must be left open.
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14512BCP PDIP–
MC14512BD SOIC–
MC14512BDR2 SOIC–
SOEIAJ–F SUFFI
CASE 96
MC14512BF SOEIAJ
MC14512B
TRUTH TABLE
C B A Inhibit Disable Z
0 0 0 0 0 X0
0 0 1 0 0 X1
0 1 0 0 0 X2
0 1 1 0 0 X3
1 0 0 0 0 X4
1 0 1 0 0 X5
1 1 0 0 0 X6
1 1 1 0 0 X7
X X X 1 0 0
X X X X 1 High
Impedance
X = Don’t Care
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
B
C
Z
DIS
VDD
X7
INH
A
X3
X2
X1
X0
VSS
X6
X5
X4
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 255/449
MC14512B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.9
9.9
14
Input Voltage “0” Level(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 256/449
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.8 µA/kHz) f + IDD
IT = (1.6 µA/kHz) f + IDD
IT = (2.4 µA/kHz) f + IDD
Three–State Leakage Current ITL 15 — ± 0.1 — ± 0.0001 ± 0.1 —
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
MC14512B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C, See Figure 1)
All Type
Characteristic Symbol VDD Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
10
15
100
50
40
Propagation Delay Time (Figure 2)
Inhibit, Control, or Data to Z
tPLH
5.0
10
15
330
125
85
Propagation Delay Time (Figure 2)
Inhibit, Control, or Data to Z
tPHL
5.0
10
15
330
125
85
3–State Output Delay Times (Figure 3)
“1” or “0” to High Z, and
High Z to “1” or “0”
tPHZ, tPLZ,
tPZH, tPZL
5.0
10
15
60
35
30
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
VDD
ID
CL
Z
DISABLE
INHIBITABC
X0X1X2
X3
PULSE
GENERATOR50%Vin
50%
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 257/449
Figure 1. Power Dissipation Test Circuit and Waveform
X3X4X5X6X7
VSS
50%DUTY
CYCLE
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 258/449
MC14512B
LOGIC DIAGRAM
1312
11
1
2
3
4
5
6
7
9X7
X6
X5
X4
X3
X2
X1
X0
B
C
A
15
10
14
DISABLE
INHIBITVDD
Z
VSS
1 1
INOUT
IN
2
OUT
2TRANSMISSION
GATE
SELECTED
DEVICE
MC14512B
MC14512B
MC14512B
IOD
ITL
ITL
3–STATE MODE OF OPERATION
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 259/449
3 STATE MODE OF OPERATION
Output terminals of several MC14512B 8–Bit DataSelectors can be connected to a single date bus as shown.One MC14512B is selected by the 3–state control, and theremaining devices are disabled into a high–impedance “off”state. The number of 8–bit data selectors, N, that may beconnected to a bus line is determined from the output drivecurrent, IOD, 3–state or disable output leakage current, ITL,
and the load current, IL, required to drive the bus line
(including fanout to other device calculated by:
ITLN = +
IOD – IL
N must be calculated for both high andbus line.
CMOS MSI(Low–Power Complementary MOS)
The MC14513B BCD–to–seven segment latch/decoder/driver isconstructed with complementary MOS (CMOS) enhancement modedevices and NPN bipolar output drivers in a single monolithic structure.The circuit provides the functions of a 4–bit storage latch, an 8421BCD–to–seven segment decoder, and has output drive capability. Lamptest (LT), blanking (BI), and latch enable (LE) inputs are used to test thedisplay, to turn–off or pulse modulate the brightness of the display, andto store a BCD code, respectively. The Ripple Blanking Input (RBI) and
Ripple Blanking Output (RBO) can be used to suppress either leadingor trailing zeroes. It can be used with seven–segment light emittingdiodes (LED), incandescent, fluorescent, gas discharge, or liquid crystalreadouts either directly or indirectly.
Applications include instrument (e.g., counter, DVM, etc.) displaydriver, computer/calculator display driver, cockpit display driver, andvarious clock, watch, and timer uses.
• Low Logic Circuit Power Dissipation• High–current Sourcing Outputs (Up to 25 mA)
• Latch Storage of Binary Input
http://onsem
A = Assem
WL or L = WaferYY Y Y
1
18
PDIP–18
P SUFFIX
CASE 707
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 260/449
• Latch Storage of Binary Input• Blanking Input• Lamp Test Provision• Readout Blanking on all Illegal Input Combinations• Lamp Intensity Modulation Capability• Time Share (Multiplexing) Capability• Adds Ripple Blanking In, Ripple Blanking Out to MC14511B
• Supply Voltage Range = 3.0 V to 18 V• Capable of Driving Two Low–Power TTL Loads, One Low–power
Schottky TTL Load to Two HTL Loads Over the Rated TemperatureRange.
MAXIMUM RATINGS (Voltages Referenced to VSS) (1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin Input Voltage Range, All Inputs –0.5 to VDD + 0.5 V
I DC C t D i I t Pi 10 A
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14513BCP PDIP–
This device contains prote
the inputs against damage du
or electric fields. However, it
precautions be taken to avoid
age higher than maximum rat
impedance circuit. A destruc
may occur if Vin and Vout are
range VSS (Vin or Vout)
Due to the sourcing capab
age can occur to the device if
outputs are shorted to VSS an
MC14513B
PIN ASSIGNMENT
LE
LT
C
B
VSS
RBI
A
D
BI a
g
f
VDD
RBO
ed
c
b14
15
16
17
18
10
1112
13
5
4
3
2
1
9
87
6
0 1 2 3 4 5 6 7 8 9
DISPLAY
a
b
c
d
e
f g
Inputs Outputs
RBI LE BI LT D C B A RBO a b c d e f g Display
X X X 0 X X X X + 1 1 1 1 1 1 1 8
X X 0 1 X X X X + 0 0 0 0 0 0 0 Blank
1 0 1 1 0 0 0 0 1 0 0 0 0 0 0 0 Blank0 0 1 1 0 0 0 0 0 1 1 1 1 1 1 0 0
X 0 1 1 0 0 0 1 0 0 1 1 0 0 0 0 1X 0 1 1 0 0 1 0 0 1 1 0 1 1 0 1 2
TRUTH TABLE
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 261/449
X 0 1 1 0 0 1 0 0 1 1 0 1 1 0 1 2X 0 1 1 0 0 1 1 0 1 1 1 1 0 0 1 3X 0 1 1 0 1 0 0 0 0 1 1 0 0 1 1 4X 0 1 1 0 1 0 1 0 1 0 1 1 0 1 1 5
X 0 1 1 0 1 1 0 0 1 0 1 1 1 1 1 6X 0 1 1 0 1 1 1 0 1 1 1 0 0 0 0 7X 0 1 1 1 0 0 0 0 1 1 1 1 1 1 1 8X 0 1 1 1 0 0 1 0 1 1 1 1 0 1 1 9X 0 1 1 1 0 1 0 0 0 0 0 0 0 0 0 Blank
X 0 1 1 1 0 1 1 0 0 0 0 0 0 0 0 Blank
X 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 BlankX 0 1 1 1 1 0 1 0 0 0 0 0 0 0 0 BlankX 0 1 1 1 1 1 0 0 0 0 0 0 0 0 0 BlankX 0 1 1 1 1 1 1 0 0 0 0 0 0 0 0 Blank
X 1 1 1 X X X X † * *
X = Don’t Care
†RBO = RBI (D C B A), indicated by other rows of table
*Depends upon the BCD code previously applied when LE = 0
MC14513B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage — Segment Outputs
“0” Level
Vin = VDD or 0
VOL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.1
9.1
14.1
—
—
—
4.1
9.1
14.1
5.0
10
15
—
—
—
4
9
1
Output Voltage — RBO Output
“0” Level
Vin = VDD or 0
VOL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4
9
14
Input Voltage . “0” Level
(VO = 3.8 or 0.5 Vdc)
(VO = 8.8 or 1.0 Vdc)(VO = 13.8 or 1.5 Vdc)
VIL
5.0
1015
—
— —
1.5
3.04.0
—
— —
2.25
4.506.75
1.5
3.04.0
—
— —
(VO = 0.5 or 3.8 Vdc) “1” Level
(VO = 1.0 or 8.8 Vdc)
(VO = 1.5 or 13.8 Vdc)
VIH 5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
Output Drive Voltage — Segments
(IOH = 0 mA) Source
(IOH = 5.0 mA)
(IOH = 10 mA)
(IOH
= 15 mA)
(IOH = 20 mA)
VOH
5.0 4.1
—
3.9
—
3.4
—
—
—
—
—
4.1
—
3.9
—
3.4
4.57
4.24
4.12
3.94
3.70
—
—
—
—
—
4
—
3
—
3
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 262/449
(IOH = 25 mA) — — — 3.54 — —
(IOH = 0 mA)
(IOH = 5.0 mA)
(IOH = 10 mA)
(IOH = 15 mA)
(IOH = 20 mA)
(IOH = 25 mA)
10 9.1
—
9.0
—
8.6
—
—
—
—
—
—
—
9.1
—
9.0
—
8.6
—
9.58
9.26
9.17
9.04
8.90
8.75
—
—
—
—
—
—
9
—
8
—
8
—
(IOH = 0 mA)
(IOH = 5.0 mA)(IOH = 10 mA)
(IOH = 15 mA)
(IOH = 20 mA)
(IOH = 25 mA)
15 14.1
—14
—
13.6
—
—
— —
—
—
—
14.1
—14
—
13.6
—
14.59
14.2714.18
14.07
13.95
13.80
—
— —
—
—
—
1
—1
—
1
—
MC14513B
ELECTRICAL CHARACTERISTICS — continued (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max
Output Drive Current — RBO Output
(VOH = 2.5 V) Source
(VOH = 9.5 V)
(VOH = 13.5 V)
IOH
5.0
10
15
– 0.40
– 0.21
– 0.81
—
—
—
– 0.32
– 0.17
– 0.66
– 0.64
– 0.34
– 1.30
—
—
—
–
–
–
(VOL = 0.4 V) Sink
(VOL = 0.5 V)
(VOL = 1.5 V)
IOL 5.0
10
15
0.18
0.47
1.80
—
—
—
0.15
0.38
1.50
0.29
0.75
2.90
—
—
—
Output Drive Current — Segments
(VOL = 0.4 V) Sink
(VOL = 0.5 V)
(VOL = 1.5 V)
IOL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1
Input Capacitance Cin — — — — 5.0 7.5
Quiescent Current
(Per Package) Vin = 0 or VDD,
Iout = 0 µA
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (1.9 µA/kHz) f + IDD
IT = (3.8 µA/kHz) f + IDD
IT = (5.7 µA/kHz) f + IDD
4. Noise immunity specified for worst–case input combination.Noise Margin for both “1” and “0” level =
1.0 Vdc min @ VDD = 5.0 Vdc2.0 Vdc min @ VDD = 10 Vdc
2.5 Vdc min @ VDD = 15 Vdc5. The formulas given are for the typical characteristics only at 25 C.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 263/449
6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + 3.5 x 10 –3 (CL – 50) VDDf
where: IT is in µA (per package), CL in pF, VDD in Vdc, and f in kHz is input frequency.
20 ns 20 ns
90%50%1
2f
Input LE and RBI low, and Inputs D, BI and LT high.
f in respect to a system clock.
All outputs connected to respective CL loads.
VDD
VSS
VOH
VOL
A, B, AND C
ANY OUTPUT
10%
50% DUTY CYCLE
50%
MC14513B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
VDDAll Types
Characteristic Symbol Vdc Min Typ
Output Rise Time — Segment Outputs tTLH
5.0
10
15
—
—
—
40
30
25
Output Rise Time — RBO Output tTLH
5.0
10
15
—
—
—
480
240
190
Output Fall Time — Segment Outputs (7.)
tTHL = (1.5 ns/pF) CL + 50 ns
tTHL = (0.75 ns/pF) CL + 37.5 ns
tTHL = (0.55 ns/pF) CL + 37.5 ns
tTHL
5.0
10
15
—
—
—
125
75
65
Output Fall Time — RBO Outputs
tTHL = (3.25 ns/pF) CL + 107.5 ns
tTHL = (1.35 ns/pF) CL + 67.5 ns
tTHL = (0.95 ns/pF) CL + 62.5 ns
tTHL
5.0
10
15
—
—
—
270
135
110
Propagation Delay Time — A, B, C, D Inputs .tPLH = (0.40 ns/pF) CL + 620 ns
tPLH = (0.25 ns/pF) CL + 237.5 ns
tPLH = (0.20 ns/pF) CL + 165 ns
tPLH5.0
10
15
—
—
—
640
250
175
tPHL = (1.3 ns/pF) CL + 655 ns
tPHL = (0.60 ns/pF) CL + 260 ns
tPHL = (0.35 ns/pF) CL + 182.5 ns
tPHL 5.0
10
15
—
—
—
720
290
200
Propagation Delay Time — RBI and BI Inputs (7.)
tPLH = (1.05 ns/pF) CL + 547.5 ns
tPLH
= (0.45 ns/pF) CL
+ 177.5 ns
tPLH = (0.30 ns/pF) CL + 135 ns
tPLH5.0
10
15
—
—
—
600
200
150
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 264/449
tPHL = (0.85 ns/pF) CL + 442.5 ns
tPHL = (0.45 ns/pF) CL + 177.5 ns
tPHL = (0.35 ns/pF) CL + 142.5 ns
tPHL 5.0
10
15
—
—
—
485
200
160
Propagation Delay Time — LT Input (7.)
tPLH = (0.45 ns/pF) CL + 290.5 ns
tPLH = (0.25 ns/pF) CL + 112.5 ns
tPLH = (0.20 ns/pF) CL + 80 ns
tPLH5.0
10
15
—
—
—
313
125
90
tPHL = (1.3 ns/pF) CL + 248 nstPHL = (0.45 ns/pF) CL + 102.5 ns
tPHL = (0.35 ns/pF) CL + 72.5 ns
tPHL
5.0
10
15
—
—
—
313
125
90
Setup Time tsu 5.0
10
15
100
40
30
—
—
—
Hold Time th 5.0
10
15
60
40
30
—
—
—
Latch Enable Pulse Width tWL(LE)
5.0
10
520
220
260
110
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 265/449
MC14513B
CONNECTIONS TO VARIOUS DISPLAY READOUTS
LIGHT EMITTING DIODE (LED) READOUT
INCANDESCENT READOUT FLUORESCENT READ
VDD
COMMON
CATHODE LED
VSS
≈ 1.7 V
VDD
COMMON
ANODE LED
VSS
VDD VDDVDD
DIRECT
(LOW BRIGHT
* *
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 266/449
GAS DISCHARGE READOUT LIQUID CRYSTAL (LC) RE
VSS VSS
VDD
APPROPRIATE
VOLTAGE VDD
MC14513B
LOGIC DIAGRAM
BI 4
A 7
B 1
C 2
D 6
LE 5
RBI 8 10 RBO
LT 30
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 267/449
MC14513B
TYPICAL APPLICATIONS FOR RIPPLE BLANKING
LEADING EDGE ZERO SUPPRESSION
CONNECT TO
VDD (1)
DISPLAYS
RBI RBO
a – – – – g –
MC14513B
INPUT
CODE
0 0 0 0
(0)
D C B A 1 1 0 0 0RBI RBI RBI RBI
D C B A D C B A D C B A D C B A
MC14513B MC14513B MC14513B MC14513B
0 0 0 0
(0)
0 1 0 1
(5)
0 0 0 0
(0)
0 0 0 1
(1)
a g a g a g a g
RBO RBO RBO RBO
– – – – – – – – – – – – – – – – – – – –
TRAILING EDGE ZERO SUPPRESSION
DISPLAYS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 268/449
RBI
a g
MC14513B
0 1 0 1
(5)
D C B A 0 0 0 1 1RBO
D C B A D C B A D C B A D C B A D C
MC14513B MC14513B MC14513B MC14513B MC14
0 0 0 0
(0)
0 0 0 1
(1)
0 0 1 1
(3)
0 0 0 0
(0)
0 0
(
a g a g a g a g a
RBI RBI RBI RBIRBO RBORBO RBO RBO0
– – – – – – – – – – – – – – – – – – – – – – – – – – –
The MC14514B and MC14515B are two output options of a 4 to 16line decoder with latched inputs. The MC14514B (output active highoption) presents a logical “1” at the selected output, whereas the
MC14515B (output active low option) presents a logical “0” at theselected output. The latches are R–S type flip–flops which hold thelast input data presented prior to the strobe transition from “1” to “0”.These high and low options of a 4–bit latch/4 to 16 line decoder areconstructed with N–channel and P–channel enhancement modedevices in a single monolithic structure. The latches are R–S typeflip–flops and data is admitted upon a signal incident at the strobeinput, decoded, and presented at the output.
These complementary circuits find primary use in decoding
applications where low power dissipation and/or high noise immunityis desired.
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)Symbol Parameter Value Unit
http://onsem
1
24
PDIP–24
P SUFFIXCASE 709
M
24
SOIC–24
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 269/449
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
1. Maximum Ratings are those values beyond which damage to the devicemay occur.
2. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
XX = Specif
A = Assem
WL or L = Wafer
YY or Y = YearWW or W = Work
Device Packag
ORDERING INF
MC14514BCP PDIP–2
MC14514BDW SOIC–
C C
1
DW SUFFIX
CASE 751E
MC14514B, MC14515B
S5
S7
D2
D1
ST
S3
S4
S6 S10
D3
D4
INH
VDD
S15
S14
S9
5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
13
11
12
21
22
23
24
S13
S12
S8
S11
S0
VSS
S2
S1
PIN ASSIGNMENT
Data Inputs Selected Output
MC14514 = Logic “1”
Inhibit D C B A MC14515 = Logic “0”
0 0 0 0 0 S0
0 0 0 0 1 S1
0 0 0 1 0 S2
0 0 0 1 1 S3
0 0 1 0 0 S4
0 0 1 0 1 S5
0 0 1 1 0 S6
0 0 1 1 1 S7
0 1 0 0 0 S8
0 1 0 0 1 S9
0 1 0 1 0 S10
DECODE TRUTH TABLE (Strobe = 1)*
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 270/449
0 1 0 1 0 S10
0 1 0 1 1 S11
0 1 1 0 0 S12
0 1 1 0 1 S13
0 1 1 1 0 S14
0 1 1 1 1 S15
1 X X X X All Outputs = 0, MC14514
All Outputs = 1, MC14515
X = Don’t Care
*Strobe = 0, Data is latched
BLOCK DIAGRAM
VDD = PIN 24
VSS = PIN 12
2
3
DATA 1
DATA 2
A
B 4
5
6
7
8
10
9
11A B C D
A B C D
A B C D
A B C D
A B C D
A B C D
A B C DS6
S5
S4
S3
S2
S1
S0
MC14514B, MC14515B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL 5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.010
15
– 1.2
– 0.25 – 0.62
– 1.8
—
— —
—
– 1.0
– 0.2 – 0.5
– 1.5
– 1.7
– 0.36 – 0.9
– 3.5
—
— —
—
– 0
– 0 – 0
–
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
—
—
5.0
10
—
—
0.005
0.010
5.0
10
—
—
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 271/449
15 — 20 — 0.015 20 —
Total Supply Current (4.) (5.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
ITL 5.0
10
15
IT = (1.35 µA/kHz) f + IDD
IT = (2.70 µA/kHz) f + IDD
IT = (4.05 µA/kHz) f + IDD
3. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
4. The formulas given are for the typical characteristics only at 25 C.5. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
MC14514B, MC14515B
SWITCHING CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
All Typ
Characteristic Symbol VDD Min Typ (7
Output Rise Time
tTLH = (3.0 ns/pF) CL + 30 ns
tTLH = (1.5 ns/pF) CL + 15 ns
tTLH = (1.1 ns/pF) CL + 10 ns
tTLH
5.0
10
15
—
—
—
180
90
65
Output Fall Time
tTHL = (1.5 ns/pF) CL + 25 ns
tTHL = (0.75 ns/pF) CL + 12.5 ns
tTHL = (0.55 ns/pF) CL + 9.5 ns
tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time; Data, Strobe to S
tPLH, tPHL = (1.7 ns/pF) CL + 465 ns
tPLH, tPHL = (0.86 ns/pF) CL + 192 ns
tPLH, tPHL = (0.5 ns/pF) CL + 125 ns
tPLH,
tPHL 5.0
10
15
—
—
—
550
225
150
Inhibit Propagation Delay Times
tPLH, tPHL = (1.7 ns/pF) CL + 315 ns
tPLH, tPHL = (0.66 ns/pF) CL + 117 ns
tPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPLH,
tPHL 5.0
10
15
—
—
—
400
150
100
Setup TimeData to Strobe tsu5.0
10
15
250
100
75
125
50
38
Hold Time
Strobe to Data
th 5.0
10
15
– 20
0
10
– 100
– 40
– 30
Strobe Pulse Width tWH
5.0
10
15
350
100
75
175
50
38
6. The formulas given are for the typical characteristics only at 25 C.7 Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 272/449
7. Data labelled Typ is not to be used for design purposes but is intended as an indication of the IC s potential pe
EXTERNAL
POWER SUPPLY
STROBE
INHIBIT
D1
D2
D3
D4
VDD
VDS
ID
For MC145151. For P–cha
2. For N–cha
2. and D1–D4
2. code for “o
For MC14514B
1. For P–channel: Inhibit = VSS
1. and D1–D4 constitute
1. binary code for “output
1. under test.”
2. For N–channel: Inhibit = VDD
S14
S13S12S11S10
S9S8S7S6S5S4S3S2S1
S0
MC14514B, MC14515B
Figure 2. Dynamic Power Dissipation Test Circuit and Waveform
PULSEGENERATOR
CL
CL
VDD
VDD
VSS
S0
S15
12
24
ID0.01 µF
CERAMIC500
µF
Vin
20 ns
90%
10%
STROBE
D1
D2
D3
D4
INHIBIT
PROGRAMMABLEPULSE
GENERATOR
VDD
STROBE
INHIBIT
D1
D2
CL
S0
S1
CL
INPUT
OUTPUT
tTLH
tPLH
20 n
OUTPUT S0
OUTPUT S1
90%50%
90%50%
10%
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 273/449
Figure 3. Switching Time Test Circuit and Waveforms
D3
D4S15
VSS CL
tTLHOUTPUT S15
50%10%
MC14514B, MC14515B
L O G I C
D I A G R A M
A B C D
1 1 S
0
9 S
1
1 0 S
2
8 S
3
7 S
4
6 S
5
5 S
6
4 S
7
1 8 S
8
1 7 S
9
2 0 S
1 0
1 9 S
1 1
1 4 S
1 2
1 3 S
1 3
1 6 S
1 4
A B C D
A B C D
A B C D
A B C D
A B C D
A B C D
A B C D
A B C D
A B C D
A B C D
A B C D
A B C D
A B C D
A B C D
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 274/449
Q Q
R S
Q Q
R S
Q Q
R S
Q Q
R S
A B C D
MC14514B, MC14515B
COMPLEX DATA ROUTING
Two MC14512 eight–channel data selectors are used herewith the MC14514B four–bit latch/decoder to effect acomplex data routing system. A total of 16 inputs from dataregisters are selected and transferred via a 3–state data busto a data distributor for rearrangement and entry into 16output registers. In this way sequential data can be re–routedor intermixed according to patterns determined by dataselect and distribution inputs.
Data is placed into the routing scheme via the eight inputson both MC14512 data selectors. One register is assigned toeach input. The signals on A0, A1, and A2 choose one of eight inputs for transfer out to the 3–state data bus. A fourthsignal, labelled Dis, disables one of the MC14512 selectors,assuring transfer of data from only one register.
In addition to a choice of input registers, 1 thru 16, the rateof transfer of the sequential information can also be varied.That is, if the MC14512 were addressed at a rate that is eight
times faster then the shift frequency the most significant bit (MSB) from selected for transfer to the data busmost significant bits from all of transferred to the data bus before thebit is presented for transfer by the inp
Information from the 3–state bus iMC14514B four–bit latch/decoder
address, D1 thru D4, the information be transferred to the addressed outpoutput registers, A thru P. This distribuoutput registers can be made in manyexample, all of the most significanregisters can be routed into output regmost significant bits into register horizontal, vertical, or other methodsimplemented.
DATA ROUTING SYSTEM
INPUTREGISTERS
DATATRANSFER
DATADISTRIBUTION
OUREG
3–STATEDATA BUS
REGISTER 1 DIS QD0
D1
D2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 275/449
REGI
REGI
REGISTER 8
REGISTER 9
DATA
SELECT
STROBE
INHIBIT
Q
D1 D2 D3 D4
A0 A1 A2
A0 A1 A2
M C 1 4 5 1 4 B
M C 1 4 5 1 2
1 4 5 1 2
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3S15
S14
S13
S12
S11
S10
S9
S8
S7
S6
S5
S4
S3
S2
S1
S0
The MC14516B synchronous up/down binary counter isconstructed with MOS P–channel and N–channel enhancement modedevices in a monolithic structure.
This counter can be preset by applying the desired value, in binary,to the Preset inputs (P0, P1, P2, P3) and then bringing the Preset
Enable (PE) high. The direction of counting is controlled by applyinga high (for up counting) or a low (for down counting) to theUP/DOWN input. The state of the counter changes on the positivetransition of the clock input.
Cascading can be accomplished by connecting the Carry Out to theCarry In of the next stage while clocking each counter in parallel. Theoutputs (Q0, Q1, Q2, Q3) can be reset to a low state by applying a highto the reset (R) pin.
This CMOS counter finds primary use in up/down and difference
counting. Other applications include: (1) Frequency synthesizerapplications where low power dissipation and/or high noise immunityis desired, (2) Analog–to–digital and digital–to–analog conversions,and (3) Magnitude and sign generation.
• Diode Protection on All Inputs• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Internally Synchronous for High Speed• Logic Edge–Clocked Design — Count Occurs on Positive Going
Edge of Clock• Single Pin Reset• A h P t E bl O ti
http://onsem
A = Assem
WL or L = Wafer
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 276/449
• Asynchronous Preset Enable Operation• Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14516BCP PDIP–
MC14516BD SOIC–
MC14516BDR2 SOIC–
1. For ordering information the SOIC packages, plea
MC14516BF SOEIAJ–
MC14516BFEL SOEIAJ–
MC14516B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
P1
P2
Q2
C
VDD
R
U/D
Q1
P0
P3
Q3
PE
VSS
CARRY OUT
Q0
CARRY IN
BLOCK DIAGRAM
VDD = PIN 16VSS = PIN 8
6
11
14
2
7
Q0
Q1
Q2
Q3
CARRY
OUT
PE
CARRY IN
RESETUP/DOWN
CLOCK
P0
P1
P2
P3
1
5
910
15
4
12
13
3
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 277/449
TRUTH TABLE
Carry In Up/Down
Preset
Enable Reset Clock Action
1 X 0 0 X No Count
0 1 0 0 Count Up
0 0 0 0 Count Down
X X 1 0 X Preset
X X X 1 X Reset
X = Don’t Care
NOTE: When counting up, the Carry Out signal is normally high and is low onlywhen Q0 through Q3 are high and Carry In is low. When counting down,Carry Out is low only when Q0 through Q3 and Carry In are low.
MC14516B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.010
15
— —
—
1.53.0
4.0
— —
—
2.254.50
6.75
1.53.0
4.0
— —
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.010
15
– 3.0
– 0.64 – 1.6
– 4.2
—
— —
—
– 2.4
– 0.51 – 1.3
– 3.4
– 4.2
– 0.88 – 2.25
– 8.8
—
— —
—
–
– 0 – 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current(Per Package)
IDD 5.010
15
— —
—
5.010
20
— —
—
0.0050.010
0.015
5.010
20
— —
—
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 278/449
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.58 µA/kHz) f + IDD
IT = (1.20 µA/kHz) f + IDD
IT = (1.70 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
MC14516B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
All TypesCharacteristic Symbol VDD Min Typ (8.)
Output Rise and Fall TimetTLH, tTHL = (1.5 ns/pF) CL + 25 nstTLH, tTHL = (0.75 ns/pF) CL + 12.5 nstTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,tTHL 5.0
1015
— — —
1005040
Propagation Delay TimeClock to Q
tPLH, tPHL = (1.7 ns/pF) CL + 230 nstPLH, tPHL = (0.66 ns/pF) CL + 97 nstPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPLH,tPHL
5.01015
— — —
315130100
Clock to Carry OuttPLH, tPHL = (1.7 ns/pF) CL + 230 nstPLH, tPHL = (0.66 ns/pF) CL + 97 nstPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPLH,tPHL 5.0
1015
— — —
315130100
Carry In to Carry OuttPLH, tPHL = (1.7 ns/pF) CL + 230 nstPLH, tPHL = (0.66 ns/pF) CL + 97 nstPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPLH,tPHL 5.0
1015
— — —
1808060
Preset or Reset to QtPLH, tPHL = (1.7 ns/pF) CL + 230 ns
tPLH, tPHL = (0.66 ns/pF) CL + 97 nstPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPLH,tPHL 5.0
1015
—
— —
315
130100
Preset or Reset to Carry OuttPLH, tPHL = (1.7 ns/pF) CL + 465 nstPLH, tPHL = (0.66 ns/pF) CL + 192 nstPLH, tPHL = (0.5 ns/pF) CL + 125 ns
tPLH,tPHL 5.0
1015
— — —
550225150
Reset Pulse Width tw 5.01015
380200160
19010080
Clock Pulse Width tWH 5.0
1015
350
170140
200
10075
Clock Pulse Frequency fcl 5.010
——
3.06 0
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 279/449
1015
— —
6.08.0
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an Indication of the IC’s potential pe
MC14516B
SWITCHING CHARACTERISTICS (9.) (CL = 50 pF, TA = 25 C) (continued)
All TypesCharacteristic Symbol VDD Min Typ (10.)
Preset or Reset Removal TimeThe Preset or Reset signal must be low prior to apositive–going transition of the clock.
trem 5.01015
650230180
32511590
Clock Rise and Fall Time tTLH,tTHL
5.01015
— — —
— — —
Setup TimeCarry In to Clock
tsu 5.010
15
260120
100
13060
50Hold Time
Clock to Carry Inth 5.0
1015
02020
– 60 – 20
0
Setup TimeUp/Down to Clock
tsu 5.01015
500200150
25010075
Hold TimeClock to Up/Down
th 5.01015
– 70 – 10
0
– 160 – 60 – 40
Setup TimePn to PE
tsu 5.01015
– 40 – 30 – 25
– 120 – 70 – 50
Hold TimePE to Pn
th 5.01015
480420420
240210210
Preset Enable Pulse Width tWH 5.01015
20010080
1005040
9. The formulas given are for the typical characteristics only at 25 C.10.Data labelled “Typ” is not to be used for design purposes but is intended as an Indication of the IC’s potential pe
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 280/449
MC14516B
Figure 1. Power Dissipation Test Circuit and Waveform
PULSEGENERATOR CL
CL
CL
CL
VDD
VARIABLEWIDTH
CLOCK
ID 0.01 µF
CERAMIC
20 ns
50%9
500 pF
Q0
Q1
Q2
Q3
CARRY
OUT
PE
CARRY IN
R
UP/DOWN
CLOCK
P0
P1
P2
P3
CL
LOGIC DIAGRAM
PE
C
QP
PE
C
QP
PE
C
QP
PE
C
Q214
P213
Q111
P04
Q06
P112
CLOCK
PRESET
ENABLE
RESET 9
1
15
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 281/449
T Q T Q T Q TCARRY OUT
CARRY IN
UP/DOWN
7
5
10
MC14516B
TOGGLE FLIP–FLOP
PE
C
T
Q
Q
P
PARALLEL IN
FLIP–FLOP FUNCTIONAL T
PresetEnable Clock T
1 X X
0 0
0 1
0 X
X = Don’t Care
RESET
PRESET ENABLE
CARRY IN OR
UP/DOWN
CLOCK
Q0 OR CARRY OUT
trem
tsu trem
th
tTLH
tPLH
tPHL
tPLHtTHL
50%
50%
90%
10%
50%
90%10%
CARRY OUT ONLY
tw(H)tw(H)
tw
1fcl
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 282/449
Figure 2. Switching Time Waveforms
PIN DESCRIPTIONS
INPUTS
P0, P1, P2, P3, Preset Inputs (Pins 4, 12, 13, 3) — Dataon these inputs is loaded into the counter when PE is takenhigh.
Carry In, (Pin 5) — This active–low input is used whenCascading stages. Carry In is usually connected to Carry Outof the previous stage. While high, Clock is inhibited.
Clock, (Pin 15) — Binary data is incremented ordecremented, depending on the direction of count, on thepositive transition of this input.
CONTROLS
PE, Preset Enable, (Pin 1) — Asynon the Preset Inputs. This pin is activclock when high.
R, Reset, (Pin 9) — Asynchronouputs to a low state. This pin is activeclock when high.
Up/Down, (Pin 10) — Controls thigh for up count, low for down coun
MC14516B
Figure 3. Presettable Cascaded 8–Bit Up/Down Counter
NOTE: The Least Significant Digit (L.S.D.) counts from a preset value once Preset Enable (PE) goes low. The M
Digit (M.S.D.) is disabled while C in is high. When the count of the L.S.D. reaches 0 (count down mode) or re
up mode), Cout goes low for one complete clock cycle, thus allowing the next counter to decrement/increm
(See Timing Diagram) The L.S.D. now counts through another cycle (15 clock pulses) and the above cy
L.S.D.MC14516B
Cout
Q0 Q1 Q2 Q3
P0 P1 P2 P3
PE
R
U/D
CLOCK
CinM.S.D.
MC14516B
Cout
Q0 Q1 Q2 Q3
P0 P1 P2 P3
PE
R
U/D
CLOCK
Cin
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
P0 P1 P2 P3 P4 P5 P6 P7
THUMBWHEEL SWITCHES(OPEN FOR “0”)
+VDD+VDD
+VDD
OPEN = COUNT
CLOCK
RESET
RESISTORS = 10 k
0 = COUNT
1 = PRESET
1 = UP
0 = DOWN
PRESET
ENABLE
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 283/449
MC14516B
TIMING DIAGRAM FOR THE PRESETTABLE CASCADED 8–BIT UP/DOWN CO
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 284/449
MC14516B
Figure 4. Programmable Cascaded Frequency Divider
NOTE: The programmable frequency divider can be set by applying the desired divide ratio, in binary, to the preset
the maximum divide ratio of 255 may be obtained by applying a 1111 1111 to the preset inputs P0 to P7. For t
both counters should be configured in the count down mode. The divide ratio of zero is an undefined state and
M.S.D.MC14516B
L.S.D.MC14516B
THUMBWHEEL SWITCHES(OPEN FOR “0”)
+VDD+VDD
Cout
+VDD
OPEN = COUNT
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
Q0 Q1 Q2 Q3
P0 P1 P2 P3
P0 P1 P2 P3
PE
RU/D
CLOCK
CinCout
Q0 Q1 Q2 Q3
P0 P1 P2 P3
PE
RU/D
CLOCK
Cin
P4 P5 P6 P7
CLOCK (fin)
RESET
RESISTORS = 10 k
fout =
finn
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 285/449
The MC14517B dual 64–bit static shift register consists of twoidentical, independent, 64–bit registers. Each register has separate clockand write enable inputs, as well as outputs at bits 16, 32, 48, and 64. Data
at the data input is entered by clocking, regardless of the state of the writeenable input. An output is disabled (open circuited) when the write enableinput is high. During this time, data appearing at the data input as well asthe 16–bit, 32–bit, and 48–bit taps may be entered into the device byapplication of a clock pulse. This feature permits the register to be loadedwith 64 bits in 16 clock periods, and also permits bus logic to be used.This device is useful in time delay circuits, temporary memory storagecircuits, and other serial shift register applications.
• Diode Protection on All Inputs
• Fully Static Operation• Output Transitions Occur on the Rising Edge of the Clock Pulse• Exceedingly Slow Input Transition Rates May Be Applied to the
Clock Input• 3–State Output at 64th–Bit Allows Use in Bus Logic Applications• Shift Registers of any Length may be Fully Loaded with 16 Clock
Pulses• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Capable of Driving Two Low–power TTL Loads or One Low–powerSchottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
PDIP–16
P SUFFI
CASE 64
SOIC–16
DW SUFF
CASE 751
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 286/449
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current(DC or Transient) per Pin ±10 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Operat ing Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
Device Packag
ORDERING INF
MC14517BCP PDIP–
MC14517BDW SOIC–
MC14517BDWR2 SOIC–
MC14517B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
CB
WEB
Q48B
Q16B
VDD
DB
Q32B
Q64B
CA
WEA
Q48A
Q16A
VSS
Q32A
Q64A
DA
FUNCTIONAL TRUTH TABLE (X = Don’t Care)
ClockWrite
Enable Data 16–Bit Tap 32–Bit Tap 48–Bit Tap
0 0 X Content of 16–BitDisplayed
Content of 32–BitDisplayed
Content of 48–BitDisplayed
Co
0 1 X High Impedance High Impedance High Impedance Hi
1 0 X Content of 16–BitDisplayed
Content of 32–BitDisplayed
Content of 48–BitDisplayed
Co
1 1 X High Impedance High Impedance High Impedance Hi
0 Data enteredinto 1st Bit
Content of 16–BitDisplayed
Content of 32–BitDisplayed
Content of 48–BitDisplayed
Co
1 Data enteredinto 1st Bit
Data at tapentered into 17–Bit
Data at tapentered into 33–Bit
Data at tapentered into 49–Bit
Hi
0 X Content of 16–BitDisplayed
Content of 32–BitDisplayed
Content of 48–BitDisplayed
Co
1 X High Impedance High Impedance High Impedance Hi
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 287/449
MC14517B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 CCharacteristic Symbol Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.010
15
— —
—
1.53.0
4.0
— —
—
2.254.50
6.75
1.53.0
4.0
— —
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH
= 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current(Per Package)
IDD 5.010
15
— —
—
5.010
20
— —
—
0.0050.010
0.015
5.010
20
— —
—
Total Supply Current (4.) (5.)
(D i l Q i
IT 5.0
10
IT = (4.2 µA/kHz) f + IDD
I (8 8 A/kH ) f I
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 288/449
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
10
15
IT = (8.8 µA/kHz) f + IDD
IT = (13.7 µA/kHz) f + IDD
Three–State Leakage Current ITL 15 — ± 0.1 — ± 0.0001 ± 0.1 —
3. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe4. The formulas given are for the typical characteristics only at 25 C.5. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004.
MC14517B
SWITCHING CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD
Min Typ (7.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.65 ns/pF) CL + 9.5 ns
tTLH, tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
tPLH, tPHL = (1.7 ns/pF) CL + 390 ns
tPLH, tPHL = (0.66 ns/pF) CL + 177 ns
tPLH, tPHL = (0.5 ns/pF) CL + 115 ns
tPLH, tPHL
5.0
10
15
—
—
—
475
210
140
Clock Pulse Width tWH 5.0
10
15
330
125
100
170
75
60
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
3.0
6.7
8.3
Clock Pulse Rise and Fall Time tTLH, tTHL 5.0
10
15
See Note (8.
Data to Clock Setup Time tsu 5.0
1015
0
1015
– 40
– 150
Data to Clock Hold Time th 5.0
10
15
150
75
35
75
25
10
Write Enable to Clock Setup Time tsu 5.0
10
15
400
200
110
170
65
50
Write Enable to Clock Release Time trel 5.0
1015
380
180100
160
5540
6. The formulas given are for the typical characteristics only at 25 C.7. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe8 When shift register sections are cascaded the maximum rise and fall time of the clock input should be equal toor
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 289/449
8. When shift register sections are cascaded, the maximum rise and fall time of the clock input should be equal to ortime of the data outputs, driving data inputs, plus the propagation delay of the output driving stage.
VDD
Q16 Q32 Q48 Q64
VDD
VDD
VSS
VSS
D
C
WE
D
C
WE
D
CREPETITIVE WAVEFORM
C
D
fo
(f = 1/2 fo)
MC14517B
Figure 2. Typical Output Source CurrentCharacteristics Test Circuit
Figure 3. Typical OutpuCharacteristics Te
EXTERNALPOWERSUPPLY
IOH
Vout = VOH
VDD = VGS
VSS
D
C
WE
D
C
WE
Q16 Q32 Q48 Q64
Q16 Q32 Q48 Q64
(Output being tested should be in the high–logic state)
VDD = VGS
VSS
D
C
WE
D
C
WE
Q16 Q32 Q48 Q64
Q16 Q32 Q48 Q64
(Output being tested should be in the lo
1 22 16 17 18 19
th1
th1
tWH
tWL
VOH
90%
10%
20 ns
trel
tPHL
90%
th0
t
tsu0
tsu0
50%
V
tsu1
tsu1
DATA IN 7 (9)
WRITE 3 (13)
CLOCK 4 (12)
PIN NO’S
tPLH
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 290/449
Figure 4. AC Test Waveforms
16–BIT OUTPUT 1 (15)
17–BIT INPUT
32–BIT OUTPUT 6 (10)
33–BIT INPUT
48–BIT OUTPUT 2 (14)
49–BIT INPUT
64–BIT OUTPUT 5 (11)
th1
th1
tTH
tTH
tTH
tTHL
OH
VOH
VOH
tPHL
tPHL
tPHL
tPLH
90%10%
tTLH
tTLH
tTLH
tTLH
th0
th0
th0
tsu020 ns
20 ns
20 ns
VDD
VDD
VDD
tsu0tsu1
tsu1
90%
10%50%
tPLH
tPLH
EXPANDED BLOCK DIAGRAM (1/2 OF DEVICE SHOWN)
The MC14518B dual BCD counter and the MC14520B dual binarycounter are constructed with MOS P–channel and N–channelenhancement mode devices in a single monolithic structure. Eachconsists of two identical, independent, internally synchronous 4–stagecounters. The counter stages are type D flip–flops, with
interchangeable Clock and Enable lines for incrementing on either thepositive–going or negative–going transition as required whencascading multiple stages. Each counter can be cleared by applying ahigh level on the Reset line. In addition, the MC14518B will count outof all undefined states within two clock periods. These complementaryMOS up counters find primary use in multi–stage synchronous orripple counting applications requiring low power dissipation and/orhigh noise immunity.
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Internally Synchronous for High Internal and External Speeds• Logic Edge–Clocked Design — Incremented on Positive Transition
of Clock or Negative Transition on Enable• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
http://onsem
A = Assem
PDIP–16
P SUFFI
CASE 64
SOIC–16
DW SUFF
CASE 751
SOEIAJ–1
F SUFFIXCASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 291/449
DD pp y g g
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
±10 mA
PD Power Dissipation,per Package (Note 3.)
500 mW
TA Operat ing Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3 Temperature Derating:
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14518BCP PDIP–
MC14518BDW SOIC–
MC14518BDWR2 SOIC–
MC14518BF SOEIAJ–
MC14518B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q1B
Q2B
Q3B
RB
VDD
CB
EB
Q0B
Q1A
Q0A
EA
CA
VSS
RA
Q3A
Q2A
BLOCK DIAGRAM
VDD = PIN 16VSS = PIN 8
3
4
5
6
14
13
12
11
C
C
R
RQ3
Q2
Q1
Q0
Q3
Q2Q1
Q0CLOCK
1
2
CLOCK
ENABLE
ENABLE
7
9
10
15
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 292/449
TRUTH TABLE
Clock Enable Reset Action
1 0 Increment Counter
0 0 Increment Counter
X 0 No Change
X 0 No Change
0 0 No Change
1 0 No Change
X X 1 Q0 thru Q3 = 0
MC14518B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.010
15
— —
—
1.53.0
4.0
— —
—
2.254.50
6.75
1.53.0
4.0
— —
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current(Per Package)
IDD 5.010
15
— —
—
5.010
20
— —
—
0.0050.010
0.015
5.010
20
— —
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
IT 5.0
10
IT = (0.6 µA/kHz) f + IDD
IT = (1.2 µA/kHz) f + IDD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 293/449
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
15 IT = (1.7 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.
6. To calculate total supply current at loads other than 50 pF:IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
MC14518B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
All Types
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
Clock to Q/Enable to Q
tPLH, tPHL = (1.7 ns/pF) CL + 215 ns
tPLH, tPHL = (0.66 ns/pF) CL + 97 ns
tPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPLH,
tPHL
5.0
10
15
—
—
—
280
115
80
Reset to Q
tPHL = (1.7 ns/pF) CL + 265 ns
tPHL = (0.66 ns/pF) CL + 117 ns
tPHL = (0.66 ns/pF) CL + 95 ns
tPHL
5.0
10
15
—
—
—
330
130
90
Clock Pulse Width tw(H)
tw(L)
5.0
10
15
200
100
70
100
50
35
Clock Pulse Frequency fcl 5.0
1015
—
— —
2.5
6.08.0
Clock or Enable Rise and Fall Time tTHL, tTLH 5.0
10
15
—
—
—
—
—
—
Enable Pulse Width tWH(E) 5.0
10
15
440
200
140
220
100
70
Reset Pulse Width tWH(R) 5.0
1015
280
12090
125
5540
Reset Removal Time trem 5.0
10
15
– 5
15
20
– 45
– 15
– 5
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 294/449
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
PULSEGENERATOR
CLCLCL
CL
VDD
500 µF0.01 µFCERAMICID
Q3Q2Q1
Q0C
ER
MC14518B
Figure 2. Switching Time Test Circuit and Waveforms
PULSEGENERATOR
CLCLCL
CL
VDD
VSS
Q3
Q2
Q1
Q0C
ER
20 ns
Qtr
CLOCKINPUT
tWtWH
tPLH tPH
181716151413121110987654321
0987654321
210151413121110987654321 43
0987654321
CLOCK
ENABLE
RESET
Q0
Q1
Q2
Q3
Q0
Q1
MC14518B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 295/449
Figure 3. Timing Diagram
Q1
Q2
Q3
MC14520B
MC14518B
Figure 4. Decade Counter (MC14518B) Logic Diagram
(1/2 of Device Shown)
D
CR
Q
Q
D
CR
Q
Q
D
CR
Q
Q
D
C
Q0 Q1 Q2
RESET
ENABLE
CLOCK
D Q D Q D Q D
Q0 Q1 Q2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 296/449
Figure 5. Binary Counter (MC14520B) Logic Diagram
CR
Q CR
Q CR
Q C
RESET
ENABLE
CLOCK
The MC14521B consists of a chain of 24 flip–flops with an inputcircuit that allows three modes of operation. The input will function asa crystal oscillator, an RC oscillator, or as an input buffer for anexternal oscillator. Each flip–flop divides the frequency of theprevious flip–flop by two, consequently this part will count up to 224 =
16,777,216. The count advances on the negative going edge of theclock. The outputs of the last seven–stages are available for addedflexibility.
• All Stages are Resettable• Reset Disables the RC Oscillator for Low Standby Power Drain• RC and Crystal Oscillator Outputs Are Capable of Driving External
Loads• Test Mode to Reduce Test Time
• VDD′ and VSS′ Pins Brought Out on Crystal Oscillator Inverter toAllow the Connection of External Resistors for Low–PowerOperation
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load over the Rated Temperature Range.
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range –0.5 to VDD + 0.5 V
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 297/449
(DC or Transient)
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages 7 0 mW/ C From 65 C To 125 C
Device Packag
ORDERING INF
MC14521BCP PDIP–
MC14521BD SOIC–
MC14521BDR2 SOIC–
MC14521BFEL SOEIAJ–
MC14521BFR2 SOEIAJ–
MC14521BF SOEIAJ–
MC14521B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q20
Q21
Q22
VDD
IN 1
Q18
Q19
OUT 2
VSS′
RESET
Q24
VSS
IN 2
VDD′
Q23
BLOCK DIAGRAM
OutputQ18
Q19
Q20
Q21
Q22
Q23
Q24
STAGES18 THRU 24
STAGES1 THRU 17
Q18 Q19 Q20 Q21 Q22 Q23 Q24
10 11 12 13 14 15 1
2
6
IN 2
9
IN 1
7
RESET
VDD = PIN 16VSS = PIN 8
53
4
OUT 1VDD′
VSS′OUT2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 298/449
MC14521B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD
– 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.010
15
— —
—
1.53.0
4.0
— —
—
2.254.50
6.75
1.53.0
4.0
— —
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc) Pins 4 & 7
(VOH = 9.5 Vdc)(VOH = 13.5 Vdc)
IOH
5.0
5.0
1015
– 1.2
– 0.25
– 0.62 – 1.8
—
—
— —
– 1.0
– 0.2
– 0.5 – 1.5
– 1.7
– 0.36
– 0.9 – 3.5
—
—
— —
– 0
– 0
– 0 –
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc) Pins 1, 10,
(VOH = 9.5 Vdc) 11, 12, 13, 14
(VOH = 13.5 Vdc) and 15
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
—
—
5.0
10
—
—
0.005
0 010
5.0
10
—
—
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 299/449
(Per Package) 10
15
—
10
20
—
0.010
0.015
10
20
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, allbuffers switching)
IT 5.0
10
15
IT = (0.42 µA/kHz) f + IDD
IT = (0.85 µA/kHz) f + IDD
IT = (1.40 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.003.
MC14521B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise and Fall Time (Counter Outputs)
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 12.5 ns
tTLH, tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
Clock to Q18
tPHL, tPLH = (1.7 ns/pF) CL + 4415 ns
tPHL, tPLH = (0.66 ns/pF) CL + 1667 ns
tPHL, tPLH = (0.5 ns/pF) CL + 1275 ns
tPHL, tPLH
5.0
10
15
—
—
—
4.5
1.7
1.3Clock to Q24
tPHL, tPLH = (1.7 ns/pF) CL + 5915 ns
tPHL, tPLH = (0.66 ns/pF) CL + 2167 ns
tPHL, tPLH = (0.5 ns/pF) CL + 1675 ns
5.0
10
15
—
—
—
6.0
2.2
1.7
Propagation Delay Time
Reset to Qn
tPHL = (1.7 ns/pF) CL + 1215 ns
tPHL = (0.66 ns/pF) CL + 467 ns
tPHL = (0.5 ns/pF) CL + 350 ns
tPHL
5.0
10
15
—
—
—
1300
500
375
Clock Pulse Width tWH(cl) 5.0
10
15
385
150
120
140
55
40
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
3.5
9.0
12
Clock Rise and Fall Time tTLH, tTHL 5.0
10
15
—
—
—
—
—
—
Reset Pulse Width tWH(R) 5.0
10
15
1400
600
450
700
300
225
Reset Removal Time trem 5.0
10
15
30
0
40
– 200
– 160
110
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 300/449
15 – 40 – 110
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
PULSEGENERATOR
VDD
VDD VDD
Q18
Q19
Q20CL
CL
ID
IN 2
500 µF 0.01 µF
CERAMIC
20 ns
Vin90%
10%
MC14521B
Figure 2. Switching Time Test Circuit and Waveforms
PULSEGENERATOR
Q18
Q19
Q20
Q21
Q22
Q23
Q24
IN 2
R
VDD
VDD
′
VSS VSS′CL
CL
CL
CL
CL
CL
CL
VDD
20 ns 2
10%50%
10%50%
90%
IN 2
Qn
tPLH
tTLH
tWL
Characteristic
500 kHz
Circuit
Crystal CharacteristicsResonant Frequency
Equivalent Resistance, RS
500
1.0
External Resistor/Capacitor Values
Ro
CT
CS
47
82
20
Frequency Stability
Frequency Change as a Function
of VDD (TA = 25 C)
VDD Change from 5.0 V to 10 VVDD Change from 10 V to 15 V
Frequency Change as a Function
of Temperature (VDD = 10 V)
TA Change from – 55 C to + 25 C
MC14521 only
+ 6.0
+ 2.0
– 4.0
+ 100
VDD
VDD VDD′
OUT 1OUT 2
Q18Q19Q20
Q21Q22Q23Q24
IN 1
IN 2
R
R*
CS CT
Ro
18 M
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 301/449
MC14521 only
Complete Oscillator*
TA Change from +25 C to+125 C
MC14521 only
Complete Oscillator*
– 2.0
– 160
*Complete oscillator includes crystal, capacitors, and
Figure 4. Typical Data for Crystal OscFigure 3. Crystal Oscillator Circuit
VSS VSS′
Q24R
R*
CS CT
*Optional for low power operation,
10 kΩ ≤ R ≤ 70 kΩ.
MC14521B
Figure 5. RC Oscillator Stability Figure 6. RC Oscillator Fr
Function of RTC a
–55 –25 0 25 50 75 100 125
8.0
4.0
0
–4.0
–8.0
–12
–16
F R E Q U E N C Y D E V I A T I O N ( % )
TA, AMBIENT TEMPERATURE (°C), DEVICE ONLY
TEST CIRCUITFIGURE 7
VDD = 15 V
10 V
5.0 V
RTC = 56 kΩ,
C = 1000 pF
RS = 0, f = 10.15 kHz @ VDD = 10 V, TA = 25°C
RS = 120 kΩ, f = 7.8 kHz @ VDD = 10 V, TA = 25°C
f , O S C I L L A T O R F R E Q U E N C Y ( k
H z )
100
50
20
10
5.0
1.0
2.0
0.1
0.2
0.5
1.0 k 10 k
0.0001 0.001
RTC, RESISTANCE (OH
C, CAPACITANCE (µ
VDD = 10
f AS A FUNCTIONOF C
(RTC = 56 kΩ)(RS = 120 k)
OUT 1OUT 2
Q18Q19Q20
Q21
Q22Q23Q24
IN 1
IN 2
R
VDD VDD′
VSS VSS′
VDDRS RTC
C
IN 1
IN 2
R
V
V
PULSEGENERATOR
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 302/449
Figure 7. RC Oscillator Circuit Figure 8. Functional T
MC14521B
FUNCTIONAL TEST SEQUENCE
Inputs Outputs
Reset In 2 Out 2 VSS′ VDD′ Q18 thruQ24
CounsectioCoun
1 0 0 VDD Gnd 0 Out 2togeth
A test function (see Figure 8) has been
included for the reduction of test time re uired to
0 1 1 First “on In
exercise all 24 counter stages. This test function
divides the counter into three 8–stage sections,
and 255 counts are loaded in each of the
8–stage sections in parallel. All flip–flops arenow at a logic “1”. The counter is now returned
01
—
— —
01
—
— —
255 “0are clOut 2
to the normal 24–stages in series configuration.
One more pulse is entered into Input 2 (In 2)1 1 1
The 2transi
which will cause the counter to ripple from an all
“1” state to an all “0” state.00
00
11
1 0n
VDD1
Coun24–st
1 0 1Out 2outpu
0 1 0Coun“1” st
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 303/449
MC14521B
LOGIC DIAGRAM
VDD5
RESET2
9
IN 1
6IN 2
7OUT 1
3VSS
4OUT 2
STAGES3 THRU 7
STAGES
11 THRU 15
1 2 8
9 10 16
17 18 19 20 21 22 23 24
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 304/449
10Q18
11Q19
12Q20
13Q21
14Q22
15Q23
1Q24
The MC14526B binary counter is constructed with MOS P–channeland N–channel enhancement mode devices in a monolithic structure.
This device is presettable, cascadable, synchronous down counterwith a decoded “0” state output for divide–by–N applications. In
single stage applications the “0” output is applied to the Preset Enableinput. The Cascade Feedback input allows cascade divide–by–Noperation with no additional gates required. The Inhibit input allowsdisabling of the pulse counting function. Inhibit may also be used as anegative edge clock.
This complementary MOS counter can be used in frequencysynthesizers, phase–locked loops, and other frequency divisionapplications requiring low power dissipation and/or high noiseimmunity.
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Logic Edge–Clocked Design — Incremented on Positive Transition
of Clock or Negative Transition of Inhibit• Asynchronous Preset Enable• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range –0.5 to VDD + 0.5 V
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
PDIP–16
P SUFFI
CASE 64
SOIC–16
DW SUFF
CASE 751
SOEIAJ–1
F SUFFIX
CASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 305/449
in out p p g g
(DC or Transient)DD
Iin, Iout Input or Output Current
(DC or Transient) per Pin
±10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Operat ing Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
YY or Y Year
WW or W = Work
Device Packag
ORDERING INF
MC14526BCP PDIP–
MC14526BDW SOIC–
MC14526BDWR2 SOIC–
MC14526BF SOEIAJ–
MC14526B
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
“0”
CF
P2
Q2
VDD
Q1
RESET
P1
INHIBIT
PE
P3
Q3
VSS
CLOCK
P0
PIN ASSIGNMENT
FUNCTION TABLE
Inputs Output
Clock Reset Inhibit
Preset
Enable
Cascade
Feedback “0”
Resulting
Function
X H X L L L Asynchronous reset*
X H X H L H Asynchronous reset
X H X X H H Asynchronous reset
X L X H X L Asynchronous preset
L H L X L Decrement inhibited
L L L X L Decrement inhibited
L L L L L No change** (inactive edge)
H L L L L No change** (inactive edge)
L L L L L
Decrement**
ecremen
X = Don’t Care
NOTES:** Output “0” is low when reset goes high only it PE and CF are low.
** Output “0” is high when reset is low, only if CF is high and count is 0000.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 306/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 307/449
MC14526B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL
(Figures 4, 5)
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time (Inhibit Used as Negative
Edge Clock)
Clock or Inhibit to Q
tPLH, tPHL = (1.7 ns/pF) CL + 465 ns
tPLH, tPHL = (0.66 ns/pF) CL + 197 ns
tPLH, tPHL = (0.5 ns/pF) CL + 135 ns
tPLH,
tPHL
(Figures 4, 5, 6)
5.0
10
15
—
—
—
550
225
160
Clock or Inhibit to “0”
tPLH, tPHL = (1.7 ns/pF) CL + 155 ns
tPLH, tPHL = (0.66 ns/pF) CL + 87 ns
tPLH, tPHL = (0.5 ns/pF) CL + 65 ns
5.0
10
15
—
—
—
240
130
100
Propagation Delay Time
Pn to Q
tPLH,
tPHL
(Figures 4, 7)
5.0
10
15
—
—
—
260
120
100
Propagation Delay Time
Reset to Q
tPHL
(Figure 8)
5.0
10
15
—
—
—
250
110
80
Propagation Delay Time
Preset Enable to “0”
tPHL,
tPLH
(Figures 4, 9)
5.0
10
15
—
—
—
220
100
80
Clock or Inhibit Pulse Width tw
(Figures 5, 6)
5.0
10
15
250
100
80
125
50
40
Clock Pulse Frequency (with PE = low) fmax
(Figures 4, 5, 6)
5.0
10
15
—
—
—
2.0
5.0
6.6
Clock or Inhibit Rise and Fall Time tr,
tf(Figures 5, 6)
5.0
10
15
—
—
—
—
—
—
Setup Time
Pn to Preset Enable
tsu 5.0
10
90
50
40
15
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 308/449
(Figure 10) 15 40 10
Hold Time
Preset Enable to Pn
th
(Figure 10)
5.0
10
15
30
30
30
– 15
– 5
0
Preset Enable Pulse Width tw
(Figure 10)
5.0
10
15
250
100
80
125
50
40
Reset Pulse Width tw
(Figure 8)
5.0
10
15
350
250
200
175
125
100
Reset Removal Time trem 5.0
10
10
20
– 110
30
MC14526B
Figure 1. Typical Output Source
Characteristics Test Circuit
Figure 2. Typical O
Characteristics Te
CF
PE
P0P1
P2
P3RESET
INHIBIT
CLOCK
Q0
Q1
Q2
Q3
“0”
VSS
VDD = –VGS
VOH
IOH
EXTERNALPOWERSUPPLY
CF
PE
P0P1
P2
P3RESET
INHIBIT
CLOCK
Q0
Q1
Q2
Q3
“0”
VSS
VDD = VGS
CF
PE
P0P1
P2
P3RESET
INHIBIT
CLOCK
Q0
Q1
Q2
Q3
“0”
VSS
VDD
CL
CL
CL
CL
CL
PULSEGENERATOR 20 ns 20 ns
CLOCK 90%
10%50%
VARIABLEVSS
VDD
DEVICEUNDERTEST
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 309/449
Figure 3. Power Dissipation Figure 4. Te
VARIABLEWIDTH 50% DUTY CYCLE *Includes all probe a
MC14526B
SWITCHING WAVEFORMS
Figure 5. Figure 6.
VDD
VSS
VDD
VSS
tr tf
tr tf
tf tr
CLOCK
ANY P
ANY Q
ANY Q
CLOCK
RESET
tPLH tPHL
tPLH tPHL
tw tw
tw
ANY QOR “0”
ANY QOR “0”
tTLH tTHL
1/fmax 1/fmax
90%50%
10%
90%50%
10%
90%50%10%
90%50%
10%
50%
90%50%
10%
tTLH
INHIBIT
tPLH tP
tPHL
50%
50%
trem
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 310/449
tr tf
VDDPRESETENABLE
ANY P
GND
90%50%
10%t t
50%
VALID
Figure 7. Figure 8.
MC14526B
PIN DESCRIPTIONS
Preset Enable (Pin 3) — If Reset is low, a high level onthe Preset Enable input asynchronously loads the counterwith the programmed values on P0, P1, P2, and P3.
Inhibit (Pin 4) — A high level on the Inhibit input pre–vents the Clock from decrementing the counter. With Clock(pin 6) held high, Inhibit may be used as a negative edgeclock input.
Clock (Pin 6) — The counter decrements by one for eachrising edge of Clock. See the Function Table for level
requirements on the other inputs.Reset (Pin 10) — A high level on Reset asynchronouslyforces Q0, Q1, Q2, and Q3 low and, if Cascade Feedback ishigh, causes the “0” output to go high.
“0” (Pin 12) — The “0” (Zero) output issues a pulse oneclock period wide when the counter reaches terminal count(Q0 = Q1 = Q2 = Q3 = low) if Cascade Feedback is high andPreset Enable is low. When presetting the counter to a value
other than all zeroes, the “0” output iedge of Preset Enable (when Cascade the Function Table.
Cascade Feedback (Pin 13) — If input is high, a high level is generatedthe count is all zeroes. If Cascade Feoutput depends on the Preset EnablFunction Table.
P0, P1, P2, P3 (Pins 5, 11, 14, 2) —
data inputs. P0 is the LSB.Q0, Q1, Q2, Q3 (Pins 7, 9, 15,
synchronous counter outputs. Q0 is thVSS (Pin 8) — The most negative p
This pin is usually ground.VDD (Pin 16) — The most po
potential. VDD may range from 3 to 18
STATE DIAGRAM
MC14526B
43210
15
14
13 7
6
5
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 311/449
12 11 10 9 8
MC14526B
MC14526B LOGIC DIAGRAM (Binary Down Counter)
CF
PE
INHIBIT
CLOCK
RESET
13
3
4
610
P0 Q0 P1 Q1 P2 Q2 P3
5 7 11 9 14 15
D
C
T
R Q
PE Q
D
C
T
R Q
PE Q
D
C
T
R
PEQ
VDDVDD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 312/449
MC14526B
APPLICATIONS INFORMATION
Divide–By–N, Single Stage
Figure 11 shows a single stage divide–by–N application.To initialize counting a number, N is set on the parallel
inputs (P0, P1, P2, and P3) and reset is taken highasynchronously. A zero is forced into the master and slaveof each bit and, at the same time, the “0” output goes high.Because Preset Enable is tied to the “0” output, preset isenabled. Reset must be released while the Clock is high sothe slaves of each bit may receive N before the Clock goeslow. When the Clock goes low and Reset is low, the “0”output goes low (if P0 through P3 are unequal to zero).
The counter downcounts with each rising edge of theClock. When the counter reaches the zero state, an outputpulse occurs on “0” which presets N. The propagation delaysfrom the Clock’s rising and falling edges to the “0” output’srising and falling edges are about equal, making the “0”output pulse approximately equal to that of the Clock pulse.
The Inhibit pin may be used to stop pulse counting. Whenthis pin is taken high, decrementing is inhibited.
Cascaded, Presettable Divide–By–
Figure 12 shows a three stage cascaReset high loads N. Only the first stsignificant counter) must be taken hifor all stages, but all pins could be tie
When the first stage’s Reset pin goeis latched in a high state. Reset must bis high and time allowed for Preset Enstages before Clock goes low.
When Preset Enable is high and Cbe allowed for the zero digits to Feedback to the first non–zero stage. most significant bit (M.S.B.) to the Lis equal to one (i.e. N = 1).
After N is loaded, each stage couneach rising edge of Clock. When any the leading stages (more significant output goes high and feeds back toWhen all stages are zero, the Preset loads N while the Clock is high and t
P0P1P2P3
CFRESETINHIBIT
CLOCK
PE
Q0Q1Q2Q3
“0”
N
VDD
VSSfin
BUFFERfin
N
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 313/449
Figure 11. ÷ N Counter
N0 N1 N2 N3 N4 N5 N6 N7
P0 P1 P2 P3 Q0 Q1 Q2 Q3fin CLOCK
INHIBITVSS
VDD
RESET “0” PE
CF
VSS
P0 P1 P2 P3 Q0 Q1 Q2 Q3
CLOCK
INHIBITRESET “0” PE
CF
CLOCK
INHIBITRESET
P0 P1 P2 P
N8 N9N10 N
VSS
LSB M
The MC14528B is a dual, retriggerable, resettable monostablemultivibrator. It may be triggered from either edge of an input pulse,and produces an output pulse over a wide range of widths, the durationof which is determined by the external timing components, CX and
RX.• Separate Reset Available• Diode Protection on All Inputs• Triggerable from Leading or Trailing Edge Pulse• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Pin–for–Pin Replacement with the MC14538B
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
ORDERING INF
PDIP–16
P SUFFI
CASE 64
SOIC–1D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 314/449
stg
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.
U d i t t l b ti d t i t l i lt l l (
Device Packag
ORDERING INF
MC14528BCP PDIP–
MC14528BD SOIC–
MC14528BDR2 SOIC–
1. For ordering information the SOIC packages plea
MC14528BFEL SOEIAJ–
MC14528BF SOEIAJ–
MC14528B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
A2
RESET 2
CX2/RX2
VSS
VDD
Q2
Q2
B2
A1
RESET 1
CX1/RX1
VSS
VSS
Q1
Q1
B1
BLOCK DIAGRAM
RESET 1
RESET 2
VDD
VDD
Q1
Q1
Q2
Q2
A1
B1
A2
B2
CX1
CX2 RX2
RX1
1 2
4
5
3
6
7
1415
12
11
13
10
9
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 315/449
RESET 2
VDD = PIN 16
VSS = PIN 1, PIN 8, PIN 15RX AND CX ARE EXTERNAL COMPONENTS
ONE–SHOT SELECTION GUIDE
100 ns 1 s 10 s 100 s 1 ms 10 ms 100 ms 1 s 10 s
MC14528B
MC14528B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)(VO = 13.5 or 1.5 Vdc)
VIL
5.0
1015
—
— —
1.5
3.04.0
—
— —
2.25
4.506.75
1.5
3.04.0
—
— —
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)(VOH = 13.5 Vdc)
IOH
5.0
5.0
1015
– 1.2
– 0.64
– 1.6 – 4.2
—
—
— —
– 1.0
– 0.51
– 1.3 – 3.4
– 1.7
– 0.88
– 2.25 – 8.8
—
—
— —
– 0
– 0
– 0 – 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
1015
—
— —
5.0
1020
—
— —
0.005
0.0100.015
5.0
1020
—
— —
Total Supply Current at an
external load Capacitance (CL)
and at external timing
capacitance (CX), use the
formula — (5.)
IT — IT(CL, CX) = [(CL + 0.36CX)VDDf + 2x10 –8
RXCX(VDD –2)2f] x 10 –3
where: IT in µA (per circuit), CL and CX in pF, RX in m
VDD in Vdc, f in kHz is input frequency.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 316/449
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.
MC14528B
SWITCHING CHARACTERISTICS (8.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol
CX
pF
RX
kΩ
VDD
Vdc Min TypOutput Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL
— —
5.0
10
15
—
—
—
100
50
40
Turn–Off, Turn–On Delay Time — A or B to Q or Q
tPLH, tPHL = (1.7 ns/pF) CL + 240 ns
tPLH, tPHL = (0.66 ns/pF) CL + 87 ns
tPLH, tPHL = (0.5 ns/pF) CL + 65 ns
tPLH,
tPHL
15 5.0
5.0
10
15
—
—
—
325
120
90
Turn–Off, Turn–On Delay Time — A or B to Q or Q
tPLH, tPHL = (1.7 ns/pF) CL + 620 nstPLH, tPHL = (0.66 ns/pF) CL + 257 ns
tPLH, tPHL = (0.5 ns/pF) CL + 185 ns
tPLH,
tPHL
1000 10
5.010
15
— —
—
705290
210
Input Pulse Width — A or B tWH 15 5.0 5.0
10
15
150
75
55
70
30
30
tWL 1000 10 5.0
10
15
—
—
—
70
30
30
Output Pulse Width — Q or Q(For CX < 0.01 µF use graph for
appropriate VDD level.)
tW 15 5.0 5.010
15
— —
—
550350
300
Output Pulse Width — Q or Q
(For CX > 0.01 µF use formula:
tW = 0.2 RX CX Ln [VDD – VSS]) (6.)
tW 10,000 10 5.0
10
15
15
10
15
30
50
55
Pulse Width Match between Circuits in the same
package
t1 – t2 10,000 10 5.0
10
15
—
—
—
6.0
8.0
8.0
Reset Propagation Delay — Reset to Q or Q tPLH,
tPHL
15 5.0 5.0
1015
—
— —
325
9060
1000 10 5.0
10
15
—
—
—
100
300
250
Retrigger Time trr 15 5.0 5.0
10
15
0
0
0
—
—
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 317/449
15 0 —
1000 10 5.0
1015
0
00
—
— —
External Timing Resistance RX — — — 5.0 —
External Timing Capacitance CX — — — No Lim
6. RX is in Ohms, CX is in farads, VDD and VSS in volts, PWout in seconds.7. If CX > 15 µF, Use Discharge Protection Diode DX, per Fig. 9.8. The formulas given are for the typical characteristics only at 25 C.9. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14528B
FUNCTION TABLE
Inputs Outputs
Reset A B Q Q
H H
H L
H L Not Triggered
H H Not Triggered
H L, H, H Not Triggered
H L L, H, Not Triggered
L X X L H
X X Not Triggered
Figure 1. Output Source Current Test Circuit Figure 2. Output Sink Cu
VDD VDD
OPEN
VSS VSS
RESET
A
B
Q
Q
16
8
16
8
RESET
A
B
Q
Q
IOH
VOH
VDD
ID500 pF
20 ns
0.1 F
CERAMIC
RX′
CX′
RX
CX
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 318/449
DUTY CYCLE = 50%
CL
CL
CL
CL
VSS
Vin
Vin
90%
10%
A
B
RESET
A′
B′
RESET′
Q
Q
Q′
Q′
MC14528B
INPUT CONNEC
Characteristics Rese
tPLH, tPHL, tTLH, tTHL
tW
VDD
tPLH, tPHL, tTLH, tTHL
tW
VDD
tPLH(R), tPHL(R), tW PG3
90%10%
90%10%
50%50% 50%
50%
50%
50%
tTLH
tTHLtTLH
tTHL
90%
10%
tTLH
tTHL
tTHL tTLH
50%90%
10%
50%
50%
tWL
tPLH
50%50% 50%90%10%
A
B
Q
Q
RESET
tWH
tTLH tTHL
tPHLtPHL
tPHL
tWL
tPHL
tW
Figure 4. AC Test Circuit
PULSEGENERATOR
PULSEGENERATOR
PULSEGENERATOR
VDD
RX′
CX′
RX
CX
VSS
A
B
RESET
A′
B′
RESET′
Q
Q
Q′
Q′
CL
CL
CL
CL
P
P
P
*CX = 15 pF
*CL = 15 pFRX = 5.0 k
*Includes capacitance of probes,wiring, and fixture parasitic.
NOTE: AC test waveforms for
PG1, PG2, and PG3 on
next page.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 319/449
Figure 5. AC Test Waveforms
E W I D T H ( s )
1000
100
10
VDD = 15 V
10 V5.0 V
15 V
10 V
5.0 V
15 V10 V
5.0 V
RX = 100 k
MC14528B
TYPICAL APPLICATIONS
Figure 7. Retriggerable
Monostables Circuitry
Figure 8. Non–R
Monostables
VDD
RxCx
VDD
Q
Q
RESET
FALLING EDGE
TRIGGER
RISING EDGE
TRIGGER
VDD
RxC
x
VDD
Q
Q
RESET
A
B
A
B
VDD
FALLING EDGE
TRIGGER
RISING EDGE
TRIGGER A
B
A
B
VDD
VDD
DX
Rx
Cx
Q
A
B
1, 1
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 320/449
Figure 9. Use of a Diode to Limit
Power Down Current Surge
Figure 10. Connection o
VDD
VDD
Q
RESET
VDD
B
The MC14532B is constructed with complementary MOS (CMOS)enhancement mode devices. The primary function of a priorityencoder is to provide a binary address for the active input with thehighest priority. Eight data inputs (D0 thru D7) and an enable input(Ein) are provided. Five outputs are available, three are address outputs(Q0 thru Q2), one group select (GS) and one enable output (Eout).
• Diode Protection on All Inputs• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–Power
Schottky TTL Load over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Pl ti “P d D/DW” P k 7 0 W/ C F 65 C T 125 C
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
ORDERING INF
PDIP–16
P SUFFI
CASE 64
SOIC–1D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 321/449
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to highstatic voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either VSS or VDD). Unused outputs must be left open.
Device Packag
MC14532BCP PDIP–
MC14532BD SOIC–
MC14532BDR2 SOIC–
MC14532BFEL SOEIAJ–
MC14532BF SOEIAJ–
MC14532BFR1 SOEIAJ–
MC14532B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
D2
D3
GS
Eout
VDD
Q0
D0
D1
D7
D6
D5
D4
VSS
Q1
Q2
Ein
TRUTH TABLE
Input Output
Ein D7 D6 D5 D4 D3 D2 D1 D0 GS Q2 Q1 Q0 Eout
0 X X X X X X X X 0 0 0 0 0
1 0 0 0 0 0 0 0 0 0 0 0 0 1
1 1 X X X X X X X 1 1 1 1 01 0 1 X X X X X X 1 1 1 0 0
1 0 0 1 X X X X X 1 1 0 1 0
1 0 0 0 1 X X X X 1 1 0 0 0
1 0 0 0 0 1 X X X 1 0 1 1 0
1 0 0 0 0 0 1 X X 1 0 1 0 0
1 0 0 0 0 0 0 1 X 1 0 0 1 0
1 0 0 0 0 0 0 0 1 1 0 0 0 0
X = Don’t Care
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 322/449
MC14532B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)(VO = 13.5 or 1.5 Vdc)
VIL
5.0
1015
—
— —
1.5
3.04.0
—
— —
2.25
4.506.75
1.5
3.04.0
—
— —
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH
= 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
1015
—
— —
5.0
1020
—
— —
0.005
0.0100.015
5.0
1020
—
— —
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (1.74 µA/kHz) f + IDD
IT = (3.65 µA/kHz) f + IDD
IT = (5.73 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5 Th f l i f h i l h i i l 25 C
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 323/449
5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.005.
MC14532B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall TimetTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time — Ein to Eout
tPLH, tPHL = (1.7 ns/pF) CL + 120 ns
tPLH, tPHL = (0.66 ns/pF) CL + 77 ns
tPLH, tPHL = (0.5 ns/pF) CL + 55 ns
tPLH,
tPHL 5.0
10
15
—
—
—
205
110
80
Propagation Delay Time — Ein to GS
tPLH, tPHL = (1.7 ns/pF) CL + 90 ns
tPLH, tPHL = (0.66 ns/pF) CL 57 ns
tPLH, tPHL = (0.5 ns/pF) CL + 40 ns
tPLH,
tPHL 5.0
10
15
—
—
—
175
90
65
Propagation Delay Time — Ein to Qn
tPLH, tPHL = (1.7 ns/pF) CL + 195 ns
tPLH, tPHL = (0.66 ns/pF) CL + 107 ns
tPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPHL,
tPLH 5.0
10
15
—
—
—
280
140
100
Propagation Delay Time — Dn to Qn
tPLH, tPHL = (1.7 ns/pF) CL + 265 ns
tPLH, tPHL = (0.66 ns/pF) CL + 137 ns
tPLH, tPHL = (0.5 ns/pF) CL + 85 ns
tPLH,
tPHL 5.0
10
15
—
—
—
300
170
110Propagation Delay Time — Dn to GS
tPLH, tPHL = (1.7 ns/pF) CL + 195 ns
tPLH, tPHL = (0.66 ns/pF) CL + 107 ns
tPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPLH,
tPHL 5.0
10
15
—
—
—
280
140
100
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
SWITCHMATRIX
ID
Ein
D0
D1
D2
D3
D4
D5 GS
Q2
Q1
Q0
Eout
Vout
VDD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 324/449
Output
Under
VGS = VDD
VDS = Vout
Sink Current
VGS = – VDD
VDS = Vout – VDD
Source Current
Test D0 thru D7 Ein D0 thru D6 D7 Ein
EXTERNALPOWERSUPPLY
D6
D7
Ein
D0
D1
D2
D3
D4
ID
Q1
Q0
Eout
500 µF
MC14532B
PROGRAMMABLEPULSE
GENERATOR
Ein
D0
D1
D2
D3
D4
D5
D6
D7 GS
Q2
Q1
Q0
Eout
VDD
VSS
CL
CL
CL
CL
CL
NOTE: Input rise and fall times are 20
50%
50%
50%
50%
50%
50%
50%
50%
tTLH
tPHLtPLH
tTHL
90%50%
10%
tPLH
D0
D1
D2
D3
D4
D5
D6
D7
Ein
Eout
GS
10
11
12
13
1
2
3
4
5
15
14
PINNO.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 325/449
tPHL
tPLHtPLHtPLH
tPLH
tPLH
tPLH
tPLH
tTLH
tTLH
tTLH
tPHL tPHL tPHL
GS
Q0
Q1
14
9
7
MC14532B
LOGIC DIAGRAM
(Positive Logic)LOGIC EQUATIONS
Eout = Ein D0 D1 D2 D3 D4 D5
10
11
12
13
1
2
3
4
5
D0
D1
D2
D3
D4
D5
D6
D7
Q0 = Ein (D1 D2 D4 D6 + D3 D4
Q1 = Ein (D2 D4 D5 + D3 D4 D5 +
Q2 = Ein (D4 + D5 + D6 + D7)
GS = Ein (D0 + D1 + D2 + D3 + D4 + 05
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 326/449
5Ein
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 327/449
The MC14536B programmable timer is a 24–stage binary ripplecounter with 16 stages selectable by a binary code. Provisions for anon–chip RC oscillator or an external clock are provided. An on–chipmonostable circuit incorporating a pulse–type output has beenincluded. By selecting the appropriate counter stage in conjunctionwith the appropriate input clock frequency, a variety of timing can be
achieved.• 24 Flip–Flop Stages — Will Count From 20 to 224
• Last 16 Stages Selectable By Four–Bit Select Code• 8–Bypass Input Allows Bypassing of First Eight Stages• Set and Reset Inputs• Clock Inhibit and Oscillator Inhibit Inputs• On–Chip RC Oscillator Provisions• On–Chip Monostable Output Provisions
• Clock Conditioning Circuit Permits Operation With Very Long Riseand Fall Times
• Test Mode Allows Fast Test Sequence• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
C
±10 mA
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
PDIP–16
P SUFFI
CASE 64
SOIC–16
DW SUFF
CASE 751
SOEIAJ–1
F SUFFIX
CASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 328/449
(DC or Transient) per Pin
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Operat ing Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the device
Device Packag
ORDERING INF
MC14536BCP PDIP–
MC14536BDW SOIC–
MC14536BDWR2 SOIC–
MC14536BF SOEIAJ–
MC14536B
BLOCK DIAGRAM
STAGES 9 THRU 24
Q
18
Q
17
Q
16
Q
15
Q
14
Q
13
Q
12
Q
11
Q
10
Q
9
DECODER
MONOSTABLE
MULTIVIBRATORMONO–IN 15
D 12
C 11B 10A 9
VDD = PIN 16VSS = PIN 8
STAGES
1 THRU 8
8 BYPASSSETRESETCLOCK INH.7 2 1 6
5
OUT2
4
OUT1
3IN1
OSC. INHIBIT 14
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
D
DECODE
OSC INH
MONO IN
VDD
A
B
C
OUT 1
IN 1
RESET
SET
VSS
CLOCK INH
8–BYPASS
OUT 2
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 329/449
MC14536B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)(VO = 13.5 or 1.5 Vdc)
VIL
5.0
1015
—
— —
1.5
3.04.0
—
— —
2.25
4.506.75
1.5
3.04.0
—
— —
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc) Pins 4 & 5
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 1.2
– 0.25
– 0.62
– 1.8
—
—
—
—
– 1.0
– 0.25
– 0.5
– 1.5
– 1.7
– 0.36
– 0.9
– 3.5
—
—
—
—
– 0
– 0
– 0
–
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc) Pin 13
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.010
0.020
0.030
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(C 50 pF on all outputs all
IT 5.0
10
15
IT = (1.50 µA/kHz) f + IDD
IT = (2.30 µA/kHz) f + IDD
IT = (3.55 µA/kHz) f + IDD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 330/449
(CL = 50 pF on all outputs, all
buffers switching)
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.003.
MC14536B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time (Pin 13)tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
Clock to Q1, 8–Bypass (Pin 6) High
tPLH, tPHL = (1.7 ns/pF) CL + 1715 ns
tPLH, tPHL = (0.66 ns/pF) CL + 617 ns
tPLH, tPHL = (0.5 ns/pF) CL + 425 ns
tPLH,
tPHL
5.0
10
15
—
—
—
1800
650
450
Clock to Q1, 8–Bypass (Pin 6) Low
tPLH, tPHL = (1.7 ns/pF) CL + 3715 nstPLH, tPHL = (0.66 ns/pF) CL + 1467 ns
tPLH, tPHL = (0.5 ns/pF) CL + 1075 ns
tPLH,
tPHL 5.010
15
— —
—
3.81.5
1.1
Clock to Q16
tPHL, tPLH = (1.7 ns/pF) CL + 6915 ns
tPHL, tPLH = (0.66 ns/pF) CL + 2967 ns
tPHL, tPLH = (0.5 ns/pF) CL + 2175 ns
tPLH,
tPHL 5.0
10
15
—
—
—
7.0
3.0
2.2
Reset to Qn
tPHL = (1.7 ns/pF) CL + 1415 ns
tPHL
= (0.66 ns/pF) CL
+ 567 ns
tPHL = (0.5 ns/pF) CL + 425 ns
tPHL
5.0
10
15
—
—
—
1500
600
450
Clock Pulse Width tWH 5.0
10
15
600
200
170
300
100
85
Clock Pulse Frequency
(50% Duty Cycle)
fcl 5.0
10
15
—
—
—
1.2
3.0
5.0
Clock Rise and Fall Time tTLH,
tTHL
5.0
10
15
No Limit
Reset Pulse Width tWH 5.0
10
15
1000
400
300
500
200
150
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 331/449
MC14536B
PIN DESCRIPTIONS
INPUTS
SET (Pin 1) — A high on Set asynchronously forcesDecode Out to a high level. This is accomplished by settingan output conditioning latch to a high level while at the sametime resetting the 24 flip–flop stages. After Set goes low(inactive), the occurrence of the first negative clocktransition on IN1 causes Decode Out to go low. Thecounter’s flip–flop stages begin counting on the secondnegative clock transition of IN1. When Set is high, theon–chip RC oscillator is disabled. This allows for verylow–power standby operation.
RESET (Pin 2) — A high on Reset asynchronouslyforces Decode Out to a low level; all 24 flip–flop stages arealso reset to a low level. Like the Set input, Reset disablesthe on–chip RC oscillator for standby operation.
IN1 (Pin 3) — The device’s internal counters advance onthe negative–going edge of this input. IN1 may be used as anexternal clock input or used in conjunction with OUT1 andOUT
2to form an RC oscillator. When an external clock is
used, both OUT1 and OUT2 may be left unconnected orused to drive 1 LSTTL or several CMOS loads.
8–BYPASS (Pin 6) — A high on this input causes the first8 flip–flop stages to be bypassed. This device essentiallybecomes a 16–stage counter with all 16 stages selectable.Selection is accomplished by the A, B, C, and D inputs. (Seethe truth tables.)
CLOCK INHIBIT (Pin 7) — A high on this inputdisconnects the first counter stage from the clocking source.This holds the present count and inhibits further counting.However, the clocking source may continue to run.Therefore, when Clock Inhibit is brought low, no oscillatorstart–up time is required. When Clock Inhibit is low, thecounter will start counting on the occurrence of the firstnegative edge of the clocking source at IN1.
OSC INHIBIT (Pin 14) — A highthe RC oscillator which allows for veroperation. May also be used, in conjunclock, with essentially the same resulinput.
MONO–IN (Pin 15) — Used as on–chip monostable multivibrator. Ifconnected to VSS, the monostable cDecode Out is directly connected to The monostable circuit is enabled if abetween Mono–In and VDD. This resinternal capacitance will determine pulse widths. With the addition of anVSS, the pulse width range may be eoperation the resistor value should be 5 kΩ to 100 kΩ and the capacitor valua maximum of 1000 pf. (See figures
A, B, C, D (Pins 9, 10, 11, 12) — Tflip–flop stage to be connected to Dectables.)
OUTPUTS
OUT1, OUT2 (Pin 4, 5) — Outpuwith IN1 to form an RC oscillatobuffered and may be used for 20 freexternal clock.
DECODE OUT (Pin 13) — Outpuconfiguration. When the monostable c
output is a 50% duty cycle square wa
TEST MODE
The test mode configuration divstages into three 8–stage sections tosequence. The test mode is enabled whReset are at a high level. (See Figure
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 332/449
MC14536B
TRUTH TABLES
InputSta e Selected
8–Bypass D C B A
for Decode Out0 0 0 0 0 9
0 0 0 0 1 10
0 0 0 1 0 11
0 0 0 1 1 12
0 0 1 0 0 13
0 0 1 0 1 14
0 0 1 1 0 150 0 1 1 1 16
0 1 0 0 0 17
0 1 0 0 1 18
0 1 0 1 0 19
0 1 0 1 1 20
0 1 1 0 0 21
0 1 1 0 1 220 1 1 1 0 23
0 1 1 1 1 24
Input
8–Bypass D C B A1 0 0 0 0
1 0 0 0 1
1 0 0 1 0
1 0 0 1 1
1 0 1 0 0
1 0 1 0 1
1 0 1 1 01 0 1 1 1
1 1 0 0 0
1 1 0 0 1
1 1 0 1 0
1 1 0 1 1
1 1 1 0 0
1 1 1 0 11 1 1 1 0
1 1 1 1 1
FUNCTION TABLE
In1 Set Reset
Clock
Inh
OSC
Inh Out 1 Out 2
Decode
Out
0 0 0 0 No
Change
0 0 0 0 Advance to
next state
X 1 0 0 0 0 1 1
X 0 1 0 0 0 1 0
X 0 0 1 0 — — No
Change
X 0 0 0 1 0 1 No
Ch
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 333/449
Change
0 0 0 0 X 0 1 No
Change
1 0 0 0 Advance to
next state
X = Don’t Care
MC14536B
LOGIC DIAGRAM
S T A G E S
1 8 T H R U
2 3
2 4
1 7
S T A G E S
1 0 T H R U
1 5
1 6
T
9
S T A G E S
2 T H R U 7
8
T
1
6
2
R E S E T
8 –
B Y P A S S
R
E n
C
S
Q
A
9
B
1 0
C
1 1
D
1 2
D E C O D
E R
D E C O D E R
O U T
1 3
1 5
M O N O –
I N
V D D =
P I N 1 6
V S S =
P I N 8
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 334/449
1 4
I N H I B I T
4 O U T 1
O U T 2
5
S E T
1
7
C L O C K
I N H I B I T
E C
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 335/449
MC14536B
Figure 6. Power Dissipation Test
Circuit and Waveform
Figure 7. Switching Time Test Circuit
VDD
0.01 µF
CERAMIC500 µF ID
CL
CL
CL
VSS
PULSE
GENERATOR
SET
RESET
8–BYPASS
IN1
C INH
MONO IN
OSC INH
C
B
A
D
OUT 1
OUT
2
DECODE
OUT
20 ns 20 ns
90%10%
50%
50%
DUTY CYCLE
PULSE
GENERATOR
SET
RESET
8–BYPASS
IN1
C INH
MONO INOSC INH
C
B
A
D
OUT 1
OUT
2
DECODE
OUT CL
VSS
VDD
20 ns
IN1
tWL
90%
10%
tPLHtTL
OUT
FUNCTIONAL TEST SEQUENCE
Test function (Figure 8) has been included for thereduction of test time required to exercise all 24 counterstages. This test function divides the counter into three8–stage sections and 255 counts are loaded in each of the8–stage sections in parallel. All flip–flops are now at a “1”.
The counter is now returned to the normal 24–stages inseries configuration. One more pulse is entered into In1which will cause the counter to ripple from an all “1” stateto an all “0” state.
Figure 8. Functional Te
PULSE
GENERATOR
SET
RESET
8–BYPAS
IN1
C INH
MONO IN
OSC INH
C
B
A
D
DE
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 336/449
MC14536B
FUNCTIONAL TEST SEQUENCE
Inputs Outputs Comments
In1 Set Reset 8–Bypass Decade OutQ1 thru Q24 All 24 stages are in Reset mode
1 0 1 1 0
1 1 1 1 0 Counter is in three 8 stage sections in parallel m
0 1 1 1 0 First “1” to “0” transition of clock.
1
0
—
—
—
1 1 1 255 “1” to “0” transitions are clocked in the coun
0 1 1 1 1 The 255 “1” to “0” transition.
0 0 0 0 1 Counter converted back to 24 stages in series m
Set and Reset must be connected together and
go from “1” to “0”.
1 0 0 0 1 In1 Switches to a “1”.
0 0 0 0 0 Counter Ripples from an all “1” state to an all “0
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 337/449
MC14536B
NOTE: When power is first applied to the device, Decode Out can be either at a high or low sta
On the rising edge of a Set pulse the output goes high if initially at a low state. The outp
remains high if initially at a high state. Because Clock Inh is held high, the clock source
the input pin has no effect on the output. Once Clock Inh is taken low, the output goes lo
PULSE
GEN.
PULSE
GEN.CLOCK
8–BYPASS
A
B
C
D
RESET
OSC INH
MONO–IN
SET
CLOCK INH
IN1 VSSDECODE OUT
OUT 2
OUT 1
8
16
+V
6
9
10
11
12
2
14
15
1
7
3 13
5
4
DECODE OUT
CLOCK INH
SET
IN1
POWER UP
VDD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 338/449
on the first negative clock transition. The output returns high depending on the 8–BypasA, B, C, and D inputs, and the clock input period. A 2n frequency division (where n = t
number of stages selected from the truth table) is obtainable at Decode Out. A 20 –divid
output of IN1 can be obtained at OUT1 and OUT2.
Figure 9. Time Interval Configuration Using an External Clock, Set,
and Clock Inhibit Functions
(Divide–by–2 Configured)
MC14536B
Figure 10. Time Interval Configuration Using an External Clock, Reset,
d O M bl A hi P l O
NOTE: When Power is first applied to the device with the Reset input going high, Decode Out initializes low. B
input low enables the chip’s internal counters. After Reset goes low, the 2n /2 negative transition of the c
Decode Out to go high. Since the Mono–In input is being used, the output becomes monostable. The p
output is dependent on the external timing components. The second and all subsequent pulses occur
period) intervals where n = the number of stages selected from the truth table.
PULSE
GEN.
CLOCK
8–BYPASS
A
B
C
D
RESET
SET
CLOCK INH
MONO–IN
CLOCK INH
IN1 VSSDECODE OUT
OUT 2
OUT 1
8
16
+V
6
9
10
11
12
2
1
7
15
14
3 13
5
4
DECODE OUT
RESET
IN1
POWER UP
VDD
RX
CX
*tw ≈ .00247
tw in µsec
RX in kΩCX in pF
*tw
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 339/449
and Output Monostable to Achieve a Pulse Output(Divide–by–4 Configured)
MC14536B
NOTE: This circuit is designed to use the on–chip oscillation function. The oscillator frequency is
mined by the external R and C components. When power is first applied to the device, Decod
i iti li t hi h t t B thi t t i ti d di tl t th O I h i t th ill
PULSE
GEN.
8–BYPASS
A
B
C
D
RESET
SET
CLOCK INHMONO–IN
CLOCK INH
IN1 VSSDECODE OUT
OUT 2
OUT 1
8
16
+V
6
9
10
11
12
2
14
15
1
7
3 13
5
4
VDD
RS
RTC
C
OUT 2
OUT 1
RESET
POWER UP
Rs
F
R
C
DECODE OUT
tw
≥ Rtc
= Hz
= Oh
= FA
fosc
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 340/449
Figure 11. Time Interval Configuration Using On–Chip RC Oscillator and
Reset Input to Initiate Time Interval
initializes to a high state. Because this output is tied directly to the Osc–Inh input, the oscill
disabled. This puts the device in a low–current standby condition. The rising edge of the Rese
will cause the output to go low. This in turn causes Osc–Inh to go low. However, while Reset i
the oscillator is still disabled (i.e.: standy condition). After Reset goes low, the output remai
for 2n /2 of the oscillator’s period. After the part times out, the output again goes high.
The MC14538B is a dual, retriggerable, resettable monostablemultivibrator. It may be triggered from either edge of an input pulse,and produces an accurate output pulse over a wide range of widths, the
duration and accuracy of which are determined by the external timingcomponents, CX and RX.
Output Pulse Width = (Cx) (Rx) where:Rx is in kCx is in F
• Unlimited Rise and Fall Time Allowed on the A Trigger Input• Pulse Width Range = 10 µs to 10 s• Latched Trigger Inputs
• Separate Latched Reset Inputs• 3.0 Vdc to 18 Vdc Operational Limits• Triggerable from Positive (A Input) or Negative–Going Edge
(B–Input)• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range• Pin–for–pin Compatible with MC14528B and CD4528B (CD4098)• Use the MC54/74HC4538A for Pulse Widths Less Than 10 µs with
Supplies Up to 6 V.
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
±10 mA
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
ORDERING INF
PDIP–16
P SUFFI
CASE 64
SOIC–16
DW SUFF
CASE 751
SOEIAJ–1
F SUFFIX
CASE 96
SOIC–16
D SUFFI
CASE 751
TSSOP–DT SUFF
CASE 94
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 341/449
(DC or Transient) per Pin
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Operat ing Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
Device PackagORDERING INF
MC14538BCP PDIP–
MC14538BD SOIC–
MC14538BDR2 SOIC–
MC14538BDT TSSOP–
MC14538B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
AB
RESET B
CX /RXB
VSS
VDD
QB
QB
BB
AA
RESET A
CX /RXA
VSS
VSS
QA
QA
BA
BLOCK DIAGRAM
VDD
VDD
6
7
10
9
12
11
5
4 A
B
CX RX
1 2
Q1
Q1RESET
3
CX RX
15 14
Q2
Q2RESET
13
A
B
RX AND CX ARE EXTERNAL COMPONENTS.
VDD = PIN 16
VSS = PIN 8, PIN 1, PIN 15
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 342/449
ONE–SHOT SELECTION GUIDE
100 ns
MC14528B
MC14536B
1 µs 10 µs 100 µs 1 ms 10 ms 100 ms 1 s 10 s
23 HR
MC14538B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic SymbolVdc
Min Max Min Typ(4.)
Max MiOutput Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.9
9.9
14.9
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO
= 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3.5
7.0
11
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1
– 0.
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.3
0.9
2.4
Input Current, Pin 2 or 14 Iin 15 — ± 0.05 — ± 0.00001 ±0.05 —
Input Current, Other Inputs Iin 15 — ± 0.1 — ± 0.00001 ± 0.1 —
Input Capacitance, Pin 2 or 14 Cin — — — — 25 — —
Input Capacitance, Other Inputs
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
Q = Low, Q = High
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Quiescent Current, Active State
(Both) (Per Package)
Q = High, Q = Low
IDD 5.0
10
15
—
—
—
2.0
2.0
2.0
—
—
—
0.04
0.08
0.13
0.20
0.45
0.70
—
—
—
Total Supply Current at an external
load capacitance (CL) and at
external timing network (RX, CX)(5.)
IT 5.0
10
IT = (3.5 x 10 –2) RXCXf + 4CXf + 1 x 10 –5 CLf
IT = (8.0 x 10 –2) RXCXf + 9CXf + 2 x 10 –5 CLf
IT = (1.25 x 10 –1
) RXCXf + 12CXf + 3 x 10 –5
CLh I i A ( t bl it hi
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 343/449
external timing network (R , C ) I (1.25 x 10 ) R C f + 12C f + 3 x 10 Cwhere: IT in µA (one monostable switching on
where: CX in µF, CL in pF, RX in k ohms, and
where: f in Hz is the input frequency.
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.
MC14538B
SWITCHING CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
VDDAll Types
Characteristic SymbolVdc
Min Typ(7.)
Output Rise Time
tTLH = (1.35 ns/pF) CL + 33 ns
tTLH = (0.60 ns/pF) CL + 20 ns
tTLH = (0.40 ns/pF) CL + 20 ns
tTLH
5.0
10
15
—
—
—
100
50
40
Output Fall Time
tTHL = (1.35 ns/pF) CL + 33 ns
tTHL = (0.60 ns/pF) CL + 20 ns
tTHL = (0.40 ns/pF) CL + 20 ns
tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
A or B to Q or Q
tPLH, tPHL = (0.90 ns/pF) CL + 255 ns
tPLH, tPHL = (0.36 ns/pF) CL + 132 ns
tPLH, tPHL = (0.26 ns/pF) CL + 87 ns
tPLH,
tPHL
5.0
10
15
—
—
—
300
150
100
Reset to Q or Q
tPLH, tPHL = (0.90 ns/pF) CL + 205 ns
tPLH, tPHL = (0.36 ns/pF) CL + 107 ns
tPLH, tPHL = (0.26 ns/pF) CL + 82 ns
5.0
10
15
—
—
—
250
125
95
Input Rise and Fall Times
Reset
tr, tf 5
1015
—
— —
—
— —
B Input 5
10
15
—
—
—
300
1.2
0.4
A Input 5
10
15
No Limit
Input Pulse Width
A, B, or Reset
tWH,
tWL
5.0
1015
170
9080
85
4540
Retrigger Time trr 5.0
10
15
0
0
0
—
—
—
Output Pulse Width — Q or Q
Refer to Figures 8 and 9
CX = 0.002 µF, RX = 100 kΩ
T
5.0
10
15
198
200
202
210
212
214
CX = 0 1 µF RX = 100 kΩ 5 0 9 3 9 86
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 344/449
CX = 0.1 µF, RX = 100 kΩ 5.0
10
15
9.3
9.4
9.5
9.86
10
10.14
CX = 10 µF, RX = 100 kΩ 5.0
10
15
0.91
0.92
0.93
0.965
0.98
0.99
Pulse Width Match between circuits in
the same package
100
[(T1 – T2)/T1]
5.0
10
—
—
± 1.0
± 1 0
MC14538B
OPERATING CONDITIONS
External Timing Resistance RX — 5.0 —
External Timing Capacitance CX — 0 —
8. The maximum usable resistance RX is a function of the leakage of the capacitor CX, leakage of the MC14538B, alayout and surface resistance. Susceptibility to externally induced noise signals may occur for RX > 1 MΩ..
9. If CX > 15 µF, use discharge protection diode per Fig. 11.
Figure 1. Logic Diagram
(1/2 of DevIce Shown)
NOTE: Pins 1,
be exter
–
+
–
+
VDD VDD
P1RX
CX
2
1
(14)
(15)
4 (12)
5 (11)
3 (13)
A
B
RESET
VSS
N1
Vref1C1 C2
ENABLE
Vref2ENABLE
CONTROL
S
RESET LATCH
QR
QRRS
R
S
Q
Q
OUTPUTLATCH
500 pF
VDD
0.1 µF
CERAMIC
RX RX′
CX′VSS
CXVSS
Vin
CX /RXA
B
RESET
Q
Q CL
CL20 ns
90%
ID
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 345/449
A′
B′
RESET′
Q′
Q′
VSS
CL
CL
CL
10%Vin
MC14538B
INPUT CONNEC
Characteristics Rese
tPLH, tPHL, tTLH, tTHL,
T, tWH, tWL
VDD
tPLH, tPHL, tTLH, tTHL,
T, tWH, tWL
VDD
tPLH(R), tPHL(R),
tWH, tWL
PG3
Figure 4. Switching Test Waveforms
RESET
A
B
tPLH
Q
Q
50%
tWH
90%
10%
tTLH tTHL
tWL
tTHL tPHL
tTHL
90%
10%50%
T
50% 50% 50%90%
10%
tPLHtTHL tTLH
tPHL
tWL
50%90%
10%
tPHL tPHL
tTLH tTHLtPLH
50% 50% 90%
10%50%
50%
50%
50%
tTLH
E ( % )
T 25°C
Figure 3. Switching Test Circuit
*Includes capacitance of probes,
wiring, and fixture parasitic.
NOTE: Switching test waveformsfor PG1, PG2, PG3 are shown
In Figure 4.
VDD
RX RX′
VSS
CX
CX /RXA
B
RESET
A′
B′
RESET′
Q
Q
Q′
Q′CL
CX′
CL
CL
CL
VSS
PULSE
GENERATOR
PULSE
GENERATOR
PULSEGENERATOR
VSS
*CL = 50 pF
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 346/449
0.6
0.8
1.0
U E N C Y O F O C C U R R E N C E
2
1
0
1 P U L S E W I D T H C H A N G E
T O V A L U E A T V D D =
1 0 V (TA = 25°C
RX = 100 kΩCX = 0.1 µF
0% POINT PULSE WIDTH
VDD = 5.0 V, T = 9.8 ms
VDD = 10 V, T = 10 ms
VDD = 15 V, T = 10.2 ms
RX = 100 k
CX = 0.1 µF
MC14538B
Figure 7. Typical Total Supply Current
versus Output Duty Cycle
T O T A L S U P P L Y C U R R E N
T ( A )
µ
1000
100
10
1.0
0.10.001 0.1 1.0 10 100
OUTPUT DUTY CYCLE (%)
RX = 100 kΩ, CL = 50 pF
ONE MONOSTABLE SWITCHING ONLY
VDD = 15 V
10 V
5.0 V
FUNCTION TABL
Inputs
Reset A B
H H
H L
H L
H H
H L, H, H
H L L, H,
L X X
X X
Figure 8. Typical Error of Pulse Width
Equation versus Temperature
Figure 9. Typical Error o
Equation versus Te
– 2
– 1
0
1
2
– 60 – 40 – 20 0 20 40 60 80 100 120 140
TA, AMBIENT TEMPERATURE (°C)
T Y P I C A L N O R M A L I Z E D E R R O R
W I T
H R E S P E C T T O 2 5
D
D =
1 0 V ( % )
° C V A L U E A T V
RX = 100 kΩ
CX = 0.1 µF VDD = 15 V
VDD = 10 V
VDD = 5 V
– 2.0
– 1.0
0
1.0
2.0
3.0
– 3.0
– 60 – 40 – 20 0 20 40 6
TA, AMBIENT TEMPERA
RX = 100 kΩ
CX = .002 µF
VDD = 15 V
VDD = 10 V
VDD = 5.0 V
T Y P I C A L N O R M A L I Z E D E R R O R
W I T
H R E S P E C T T O 2 5
D
D =
1 0 V ( % )
° C V A L U E A T V
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 347/449
MC14538B
THEORY OF OPERATION
2
Figure 10. Timing Operation
Positive edge re–trigger (pulse lengthening)Positive edge trigger
1
2
3 4
1
3
4
5
RESET
A
B
CX /RX
Q
Vref 1 Vref 1 Vref 1 Vref 1Vref 2
Vref 2 Vref 2 Vref
T T T
Negative edge trigger
Positive edge trigger
Positive edge re–trigger (pulse lengthening)
TRIGGER OPERATION
The block diagram of the MC14538B is shown inFigure 1, with circuit operation following.
As shown in Figure 1 and 10, before an input trigger
occurs, the monostable is in the quiescent state with the Qoutput low, and the timing capacitor CX completely chargedto VDD. When the trigger input A goes from V SS to VDD(while inputs B and Reset are held to VDD) a valid trigger isrecognized, which turns on comparator C1 and N–channeltransistor N1 . At the same time the output latch is set. Withtransistor N1 on, the capacitor CX rapidly discharges towardVSS until Vref1 is reached. At this point the output of comparator C1 changes state and transistor N1 turns off.
Comparator C1 then turns off while at the same timeC2 Wi h i N1 ff h i
RETRIGGER OPERATION
The MC14538B is retriggered if a followed by another valid trigger breturned to the quiescent (zero) state. A
timing node voltage at pin 2 or 14 hVref 1, but has not yet reached Vref 2, in output pulse width T. When a vali
, the voltage at CX /RX will again progressing along the RC charging cuQ output will remain high until timeretrigger.
RESET OPERATION
The MC14538B may be reset durinoutput pulse In the reset mode of ope
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 348/449
comparator C2 turns on. With transistor N1 off, the capacitorCX begins to charge through the timing resistor, RX, towardVDD. When the voltage across CX equals Vref 2, comparatorC2 changes state, causing the output latch to reset (Q goeslow) while at the same time disabling comparator C2 . Thisends at the timing cycle with the monostable in the quiescentstate waiting for the next trigger
output pulse. In the reset mode of opeon Reset sets the reset latch and causfast charged to VDD by turning on tranvoltage on the capacitor reaches Vrefclear, and will then be ready to accepReset input is held low, any trigger ininhibited and the Q and Q outputs of th
MC14538B
the MC14538B is powered down, the capacitor voltage maydischarge from VDD through the standard protection diodesat pin 2 or 14. Current through the protection diodes should
be limited to 10 mA and therefore the discharge time of theVDD supply must not be faster than (VDD). (C)/(10 mA).For example, if VDD = 10 V and CX = 10µF, the VDD supplyshould discharge no faster than (10 V) x (10 µF)/ (10 mA)= 10 ms. This is normally not a problem since powersupplies are heavily filtered and cannot discharge at this rate.
When a more rapid decrease of VDD to zero volts occurs,the MC14538B can sustain damage. To avoid this possibilityuse an external clamping diode, DX, connected as shown in
Fig. 11. Figure 11. Use of a DiodPower Down Current
VSS
Dx
RxCx
Q
Q
RESET
Figure 12. Retriggerable
Monostables Circuitry
Figure 13. No
Monostab
CX RX
VDD
Q
Q
RESET = VDD
B = VDD
A
B
RISING–EDGE
TRIGGER
CX RX
VDD
Q
Q
RESET = VDD
B
A = VSS
FALLING–EDGE
TRIGGER
A
B
R
R
A
BFALLING–EDGE
TRIGGER
RISING–EDGE
TRIGGER
TYPICAL APPLICATIONS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 349/449
NC
NC
NC
A
B
Q
QCD
The MC14541B programmable timer consists of a 16–stage binarycounter, an integrated oscillator for use with an external capacitor andtwo resistors, an automatic power–on reset circuit, and output controllogic.
Timing is initialized by turning on power, whereupon the power–onreset is enabled and initializes the counter, within the specified VDDrange. With the power already on, an external reset pulse can beapplied. Upon release of the initial reset command, the oscillator willoscillate with a frequency determined by the external RC network. The16–stage counter divides the oscillator frequency (f osc) with the nth
stage frequency being f osc /2n.• Available Outputs 28, 210, 213 or 216
• Increments on Positive Edge Clock Transitions• Built–in Low Power RC Oscillator (± 2% accuracy over temperature
range and ± 20% supply and ± 3% over processing at < 10 kHz)
• Oscillator May Be Bypassed if External Clock Is Available (Applyexternal clock to Pin 3)
• External Master Reset Totally Independent of Automatic ResetOperation
• Operates as 2n Frequency Divider or Single Transition Timer• Q/Q Select Provides Output Logic Level Flexibility• Reset (auto or master) Disables Oscillator During Resetting to
Provide No Active Power Dissipation
• Clock Conditioning Circuit Permits Operation with Very Slow ClockRise and Fall Times
• Automatic Reset Initializes All Counters On Power Up• Supply Voltage Range = 3.0 Vdc to 18 Vdc with Auto Reset
Supply Voltage Range = Disabled (Pin 5 = VDD)Supply Voltage Range = 8.5 Vdc to 18 Vdc with Auto ResetSupply Voltage Range = Enabled (Pin 5 = VSS)
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
http://onsem
A = Assem
WL or L = Wafer
YY or Y = YearWW or W = Work
Device Packag
ORDERING INF
MC14541BCP PDIP–
MC14541BD SOIC–
MC14541BDR2 SOIC–
MC14541BDT TSSOP–
PDIP–14
P SUFFI
CASE 64
SOIC–14
D SUFFI
CASE 751
TSSOP–1DT SUFF
CASE 948
SOEIAJ–
F SUFFI
CASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 350/449
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin Input Current (DC or Transient) ± 10 (per Pin) mA
Iout Output Current (DC or Transient) ± 45 (per Pin) mA 1. For ordering information the SOIC packages plea
MC14541BDTR2 TSSOP–
MC14541BF SOEIAJ–
MC14541BFEL SOEIAJ–
MC14541B
PIN ASSIGNMENT
NC = NO CONNECTION
11
12
13
14
8
9
105
4
3
2
1
7
6
MODE
NC
A
B
VDD
Q
Q/Q SEL
NC
RS
Ctc
Rtc
VSS
MR
AR
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
10
15
– 7.96
– 4.19
– 16.3
—
—
—
– 6.42
– 3.38
– 13.2
– 12.83
– 6.75
– 26.33
—
—
—
– 4
– 2
– 9
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
1.93
4.96
19.3
—
—
—
1.56
4.0
15.6
3.12
8.0
31.2
—
—
—
1.
2
10
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance(Vin = 0)
Cin — — — — 5.0 7.5 —
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 351/449
Quiescent Current
(Pin 5 is High)
Auto Reset Disabled
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Auto Reset Quiescent Current
(Pin 5 is low)
IDDR 10
15
—
—
250
500
—
—
30
82
250
500
—
—
Supply Current (5 ) (6 ) I 5 0 I (0 4 µA/kHz) f + I
MC14541B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay, Clock to Q (28 Output)
tPLH, tPHL = (1.7 ns/pF) CL + 3415 ns
tPLH, tPHL = (0.66 ns/pF) CL + 1217 ns
tPLH, tPHL = (0.5 ns/pF) CL + 875 ns
tPLH
tPHL 5.0
10
15
—
—
—
3.5
1.25
0.9
Propagation Delay, Clock to Q (216 Output)
tPHL, tPLH = (1.7 ns/pF) CL + 5915 ns
tPHL, tPLH = (0.66 ns/pF) CL + 3467 nstPHL, tPLH = (0.5 ns/pF) CL + 2475 ns
tPHL
tPLH 5.0
1015
—
— —
6.0
3.52.5
Clock Pulse Width tWH(cl) 5.0
10
15
900
300
225
300
100
85
Clock Pulse Frequency (50% Duty Cycle) fcl 5.0
10
15
—
—
—
1.5
4.0
6.0
MR Pulse Width tWH(R) 5.0
10
15
900
300
225
300
100
85
Master Reset Removal Time trem 5.0
10
15
420
200
200
210
100
100
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
PULSE
GENERATOR
VDD
CL
Q
RS
AR
Q/Q SELECT
MODE
A
B
MR
VSS
PULSE
GENERATOR
VDD
RS
AR
Q/Q SELEC
MODE
A
B
MR
V
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 352/449
VSS
20 ns 20 ns
(Rtc AND Ctc OUTPUTS ARE LEFT OPEN)
V
20 ns
90%50%
20 ns
10%RStPLH
50%
MC14541B
EXPANDED BLOCK DIAGRAM
A 12B 13
Rtc 1
Ctc 2
RS 3
5AUTO RESET
OSC
RESET
C 288–STAGE
COUNTER
RESET
POWER–ON
RESET
6
MASTER RESET
210 213 216
C 8–STAGE
COUNTER
RESET
1 OF 4
MUX
10
MODE
9
Q/Q
SELECTVDD = PIN 14
VSS = PIN 7
FREQUENCY SELECTION TABLE
A B
Number of
Counter Stages
n
Count
2n
0 0 13 8192
0 1 10 1024
1 0 8 256
1 1 16 65536
TRUTH TABLE
St
Pin 0
Auto Reset, 5 Auto Reset
Operating
Master Reset, 6 Timer Operational
Q/Q, 9 Output Initially Low
After Reset
Mode, 10 Single Cycle Mode
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 353/449
3TO CLOCK
CIRCUIT
INTERNAL
MC14541B
TYPICAL RC OSCILLATOR CHARACTERISTICS
Figure 4. RC Oscillator Stability
Figure 5. RC Oscillator Fr
Function of Rtc a
8.0
4.0
0
– 4.0
– 8.0
– 12
– 161251007550250 – 25 – 55
TA, AMBIENT TEMPERATURE (°C)
F R E Q U E N C Y D E V I A T I O N ( % )
VDD = 15 V
10 V
5.0 V
RS = 0, f = 10.15 kHz @ VDD = 10 V, TA = 25°CRS = 120 kΩ, f = 7.8 kHz @ VDD = 10 V, TA = 25°C
RTC = 56 kΩ,
C = 1000 pF
100
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
1.0 k 10 k
f , O S C I L L A T O R F R E Q U E N C Y ( k H z )
RTC, RESISTANCE (OH
0.0001 0.001
C, CAPACITANCE (µ
f AS A FUNCTION
OF C
(RTC = 56 kΩ)
(RS = 120 kΩ)
OPERATING CHARACTERISTICS
With Auto Reset pin set to a “0” the counter circuit isinitialized by turning on power. Or with power already on,the counter circuit is reset when the Master Reset pin is setto a “1”. Both types of reset will result in synchronouslyresetting all counter stages independent of counter state.Auto Reset pin when set to a “1” provides a low poweroperation.
The RC oscillator as shown in Figure 3 will oscillate witha frequency determined by the external RC network i.e.,
if (1 kHz f 100 kHz)2.3 RtcCtc
1f =
and RS ≈ 2 Rtc where RS ≥ 10 kΩ
The time select inputs (A and B) provide a two–bit addressto output any one of four counter stages (28, 210, 213 and216). The 2n counts as shown in the Frequency Selection
Table represents the Q output of the Nth
stage of the counter.When A is “1”, 216 is selected for both states of B. However,
when B is “0”, normal counting is incounter stage receives its clock direc(i.e., effectively outputting 28).
The Q/Q select output control pin poutput level. When the counter is inQ/Q select pin is set to a “0” thecorrespondingly when Q/Q select pi
output is a “1”.When the mode control pin is set count is continually transmitted to mode pin “0” and after a reset conditioExpanded Block Diagram) resets, cand after 2n–1 counts the RS flip–flopoutput to change state. Hence, after aoutput will not change. Thus, a Masteapplied or a change in the mode pin le
the single cycle operation.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 354/449
DIGITAL TIMER APPLICATION
Rtc
Ctc
VDD
B
1
2 13
14
When Master Reset (MR) receiveinternal counters and latch are reset. Tand remains high until the selected (v
The MC14543B BCD–to–seven segment latch/decoder/driver isdesigned for use with liquid crystal readouts, and is constructed withcomplementary MOS (CMOS) enhancement mode devices. The
circuit provides the functions of a 4–bit storage latch and an 8421BCD–to–seven segment decoder and driver. The device has thecapability to invert the logic levels of the output combination. Thephase (Ph), blanking (BI), and latch disable (LD) inputs are used toreverse the truth table phase, blank the display, and store a BCD code,respectively. For liquid crystal (LC) readouts, a square wave is appliedto the Ph input of the circuit and the electrically common backplane of the display. The outputs of the circuit are connected directly to thesegments of the LC readout. For other types of readouts, such as
light–emitting diode (LED), incandescent, gas discharge, andfluorescent readouts, connection diagrams are given on this data sheet.Applications include instrument (e.g., counter, DVM etc.) display
driver, computer/calculator display driver, cockpit display driver, andvarious clock, watch, and timer uses.
• Latch Storage of Code• Blanking Input• Readout Blanking on All Illegal Input Combinations•
Direct LED (Common Anode or Cathode) Driving Capability• Supply Voltage Range = 3.0 V to 18 V• Capable of Driving 2 Low–power TTL Loads, 1 Low–power Schottky
TTL Load or 2 HTL Loads Over the Rated Temperature Range• Pin–for–Pin Replacement for CD4056A (with Pin 7 Tied to VSS).• Chip Complexity: 207 FETs or 52 Equivalent Gates
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
V Input Voltage Range All Inputs 0 5 to V + 0 5 V
http://onsem
A = Assem
WL or L = WaferYY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14543BCP PDIP–
MC14543BD SOIC–
MC14543BDR2 SOIC–
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 355/449
Vin Input Voltage Range, All Inputs –0.5 to VDD + 0.5 V
Iin DC Input Current per Pin ± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Operat ing Temperature Range –55 to +125 °C
1. For ordering information the SOIC packages, pleaON Semiconductor repres
MC14543BFEL SOEIAJ–
MC14543BF SOEIAJ–
MC14543B
TRUTH TABLE
Inputs Outputs
LD BI Ph* D C B A a b c d e f g Display
X 1 0 X X X X 0 0 0 0 0 0 0 Blank
1 0 0 0 0 0 0 1 1 1 1 1 1 0 0
1 0 0 0 0 0 1 0 1 1 0 0 0 0 11 0 0 0 0 1 0 1 1 0 1 1 0 1 21 0 0 0 0 1 1 1 1 1 1 0 0 1 3
1 0 0 0 1 0 0 0 1 1 0 0 1 1 41 0 0 0 1 0 1 1 0 1 1 0 1 1 51 0 0 0 1 1 0 1 0 1 1 1 1 1 61 0 0 0 1 1 1 1 1 1 0 0 0 0 7
1 0 0 1 0 0 0 1 1 1 1 1 1 1 81 0 0 1 0 0 1 1 1 1 1 0 1 1 91 0 0 1 0 1 0 0 0 0 0 0 0 0 Blank1 0 0 1 0 1 1 0 0 0 0 0 0 0 Blank
1 0 0 1 1 0 0 0 0 0 0 0 0 0 Blank1 0 0 1 1 0 1 0 0 0 0 0 0 0 Blank1 0 0 1 1 1 0 0 0 0 0 0 0 0 Blank1 0 0 1 1 1 1 0 0 0 0 0 0 0 Blank
0 0 0 X X X X ** **
† † † † Inverse of Output DisplayCombinations as aboveAbove
X = Don’t care
† = Above Combinations
* = For liquid crystal readouts, apply a square wave to Ph
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
d
e
g
f
VDD
a
b
c
D
B
C
LD
VSS
BI
PH
A
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 356/449
For common cathode LED readouts, select Ph = 0
For common anode LED readouts, select Ph = 1
** = Depends upon the BCD code previously applied when LD = 1
MC14543B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (5.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 0.5 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
10
15
– 3.0
– 0.64
—
– 1.6
– 4.2
—
—
—
—
—
– 2.4
– 0.51
—
– 1.3
– 3.4
– 4.2
– 0.88
– 10.1
– 2.25
– 8.8
—
—
—
—
—
–
– 0
—
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 9.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
10
15
0.64
1.6
—
4.2
—
—
—
—
0.51
1.3
—
3.4
0.88
2.25
10.1
8.8
—
—
—
—
0.
0
—
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package) Vin = 0 or VDD,Iout = 0 µA
IDD 5.0
1015
—
— —
5.0
1020
—
— —
0.005
0.0100.015
5.0
1020
—
— —
Total Supply Current (6.) (7.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (1.6 µA/kHz) f + IDD
IT = (3.1 µA/kHz) f + IDD
IT = (4.7 µA/kHz) f + IDD
5. Noise immunity specified for worst–case input combination.
Noise Margin for both “1” and “0” level = 1.0 V min @ VDD = 5.0 V
= 2.0 V min @ VDD = 10 V
= 2.5 V min @ VDD = 15 V
6. To calculate total supply current at loads other than 50 pF:
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 357/449
IT(CL) = IT(50 pF) + 3.5 x 10 –3 (CL – 50) VDDf
where: IT is in µA (per package), CL in pF, VDD in V, and f in kHz is input frequency.
7. The formulas given are for the typical characteristics only at 25 C.
MC14543B
SWITCHING CHARACTERISTICS (8.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ
Output Rise Time
tTLH = (3.0 ns/pF) CL + 30 nstTLH = (1.5 ns/pF) CL + 15 ns
tTLH = (1.1 ns/pF) CL + 10 ns
tTLH
5.010
15
— —
—
10050
40
Output Fall Time
tTHL = (1.5 ns/pF) CL + 25 ns
tTHL = (0.75 ns/pF) CL + 12.5 ns
tTHL = (0.55 ns/pF) CL + 12.5 ns
tTHL
5.0
10
15
—
—
—
100
50
40
Turn–Off Delay Time
tPLH = (1.7 ns/pF) CL + 520 ns
tPLH
= (0.66 ns/pF) CL
+ 217 ns
tPLH = (0.5 ns/pF) CL + 160 ns
tPLH
5.0
10
15
—
—
—
605
250
185
Turn–On Delay Time
tPHL = (1.7 ns/pF) CL + 420 ns
tPHL = (0.66 ns/pF) CL + 172 ns
tPHL = (0.5 ns/pF) CL + 130 ns
tPHL
5.0
10
15
—
—
—
505
205
155
Setup Time tsu 5.0
10
15
350
450
500
Hold Time th 5.0
10
15
40
30
20
Latch Disable Pulse Width (Strobing Data) tWH 5.0
10
15
250
100
80
125
50
40
8. The formulas given are for the typical characteristics only.
LOGIC DIAGRAM
VDD = PIN 16
VSS = PIN 8
B 3
A 5
BI 7
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 358/449
B 3
C 2
MC14543B
Figure 1. Typical Output Source
Characteristics
Figure 2. Typical Ou
Characteristic
– 24
– 18
– 12
– 6.0
0
I O H ,
S O U R C E C U R R E N T ( m
A d c )
(VOH – VDD), SOURCE DEVICE VOLTAGE (Vdc)
– 16 – 12 – 8.0 – 4.0 0
VDD = 5.0 VdcPOHmax = 70 mWdc
VDD = 10 Vdc
VDD = 15 Vdc
VSS = 0 Vdc0
6.0
12
18
24
I O L ,
S I N K C U R R E N T ( m A d c )
(VOL – VSS), SINK DEVICE V
0 4.0 8.0
VDD = 10
VDD = 5.0 Vdc PO
Inputs BI and Ph low, and Inputs D and LD high.
f in respect to a system clock.
(a) Inputs D, Ph, and BI low, and Inp
(b) Inputs D, Ph, and BI low, and Inp
(c) Data DCBA strobed into latches
20 ns 20 nsVDD
VSS
VOH
10% 50%90%1
2f
50% DUTY CYCLE
A, B, AND C
ANY OUTPUT
All outputs connected to respective CL loads.
20 ns 20 ns90%
10%
tPHL tPL
90% 50%
tTHL
C
g
LD
C
g
LD
20 ns
90% 50%10%
50% 50
tsu
50%
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 359/449
Figure 3. Dynamic Power Dissipation
Signal Waveforms
Figure 4. Dynamic Signa
VOL tWH
MC14543B
CONNECTIONS TO VARIOUS DISPLAY READOUTS
LIQUID CRYSTAL (LC) READOUT
LIGHT EMITTING DIODE (LED) READOUT
INCANDESC
NOTE: Bipolar transistors may be added for gain (for VDD 10 V or Iout ≥ 10 mA).
GAS DISCHA
CONNECTIONS TO SEGMENTS
SQUARE WAVE
(VSS TO VDD)
COMMON
BACKPLANE
ONE OF SEVEN SEGMENTSMC14543B
OUTPUT
Ph
MC14543B
OUTPUTPh
VSS
MC14543B
OUTPUTPh
VSS
COMMON
CATHODE LED
COMMON
ANODE LED
VDD
MC14543B
OUTPUTPh
VDD
MC14543B
OUTPUTPh
VSS
a
b
cd
e
f g
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 360/449
VDD = PIN 16
VSS = PIN 8
DISPLAY
The MC14549B and MC14559B successive approximationregisters are 8–bit registers providing all the digital control and storagenecessary for successive approximation analog–to–digital conversionsystems. These parts differ in only one control input. The Master Reset(MR) on the MC14549B is required in the cascaded mode when more
than 8 bits are desired. The Feed Forward (FF) of the MC14559B isused for register shortening where End–of–Conversion (EOC) isrequired after less than eight cycles.
Applications for the MC14549B and MC14559B includeanalog–to–digital conversion, with serial and parallel outputs.
• Totally Synchronous Operation• All Outputs Buffered• Single Supply Operation
• Serial Output• Retriggerable• Compatible with a Variety of Digital and Analog Systems such as the
MC1408 8–Bit D/A Converter• All Control Inputs Positive–Edge Triggered• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving 2 Low–Power TTL Loads, 1 Low–Power Schottky
TTL Load or 2 HTL Loads Over the Rated Temperature Range
• Chip Complexity: 488 FETs or 122 Equivalent Gates
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin Input Voltage Range, All Inputs –0.5 to VDD + 0.5 V
Iin DC Input Current, per Pin ±10 mA
PD Power Dissipation,
per Package (Note 2 )
500 mW
http://onsem
XX = Specif
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14549BCP PDIP–
PDIP–16
P SUFFI
CASE 64
SOIC–16
DW SUFF
CASE 751
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 361/449
per Package (Note 2.)
TA Operat ing Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
1. Maximum Ratings are those values beyond which damage to the devicemay occur.
MC14549BDWR2 SOIC–
MC14559BCP PDIP–
MC14559BDWR2 SOIC–
MC14549B, MC14559B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q0
Q1
Q2
Q3
VDD
SC
*
EOC
Q7
Q6
Q5
Q4
VSS
C
D
Sout
*For MC14549B Pin 10 is MR input.
For MC14559B Pin 10 is FF input.
SC SC(t–1) MR MR(t–1) Clock Action
X X X X NoneX X 1 X Reset
1 0 0 0 StartConversion
1 X 0 1 StartConversion
1 1 0 0 ContinueConversion
0 X 0 X ContinuePrevious
Operation
TRUTH TABLESMC14549B
X = Don’t Care t–1 = State at Previous Clock
SC SC(t–1) EOC Clock Action
X X X None1 0 0 Start
Conversio
X 1 0 ContinueConversio
0 0 0 ContinueConversio
0 X 1 RetainConversioResult
1 X 1 StartConversio
MC14559B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 362/449
MC14549B, MC14559B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage (3.) “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 1.2
– 0.25
– 0.62
– 1.8
—
—
—
—
– 1.0
– 0.2
– 0.5
– 1.5
– 1.7
– 0.36
– 0.9
– 3.5
—
—
—
—
– 0
– 0
– 0
–
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc) Q Outputs
(VOL = 1.5 Vdc)
IOL 5.0
10
15
1.28
3.2
8.4
—
—
—
1.02
2.6
6.8
1.76
4.5
17.6
—
—
—
0.
1
4
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc) Pin 5, 11 only
(VOL = 1.5 Vdc)
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ± 0.00001 ±0.1 —
Input Capacitance Cin — — — — 5.0 7.5 —
Quiescent Current(Per Package)
(Clock = 0 V,
Other Inputs = VDD
or 0 V, Iout = 0 µA)
IDD 5.010
15
— —
—
5.010
20
— —
—
0.0050.010
0.015
5.010
20
— —
—
Total Supply Current (4.) (5.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.8 µA/kHz) f + IDD
IT = (1.6 µA/kHz) f + IDD
IT = (2.4 µA/kHz) f + IDD
3. Noise immunity specified for worst–case input combination.
Noise Margin for both “1” and “0” level = 1.0 V min @ VDD = 5.0 V
= 2.0 V min @ VDD = 10 V
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 363/449
@ DD
= 2.5 V min @ VDD = 15 V
4. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + 3.5 x 10 –3 (CL = 50) VDDf
where: IT is in µA (per package), CL in pF, VDD in V, and f in kHz is input frequency.
MC14549B, MC14559B
SWITCHING CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ
Output Rise Time
tTLH = (3.0 ns/pF) CL + 30 nstTLH = (1.5 ns/pF) CL + 15 ns
tTLH = (1.1 ns/pF) CL + 10 ns
tTLH
5.010
15
— —
—
18090
65
Output Fall Time
tTHL = (1.5 ns/pF) CL + 25 ns
tTHL = (0.75 ns/pF) CL + 12.5 ns
tTHL = (0.55 ns/pF) CL + 9.5 ns
tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
Clock to Q
tPLH, tPHL = (1.7 ns/pF) CL + 415 ns
tPLH, tPHL = (0.66 ns/pF) CL + 177 ns
tPLH, tPHL = (0.5 ns/pF) CL + 130 ns
Clock to Sout
tPLH, tPHL = (1.7 ns/pF) CL + 665 ns
tPLH, tPHL = (0.66 ns/pF) CL + 277 ns
tPLH, tPHL = (0.5 ns/pF) CL + 195 ns
Clock to EOC
tPLH, tPHL = (1.7 ns/pF) CL + 215 ns
tPLH, tPHL = (0.66 ns/pF) CL + 97 ns
tPLH, tPHL = (0.5 ns/pF) CL + 75 ns
tPLH,
tPHL
5.0
10
15
5.0
10
15
5.0
10
15
—
—
—
—
—
—
—
—
500
210
155
750
310
220
300
130
100
SC, D, FF or MR Setup Time tsu 5.010
15
250100
80
12550
40
Clock Pulse Width tWH(cl) 5.0
10
15
700
270
200
350
135
100
Pulse Width — D, SC, FF or MR tWH 5.0
10
15
500
200
160
250
100
80
Clock Rise and Fall Time tTLH,tTHL
5.010
15
— —
— —
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
1.5
3.0
4.0
6. The formulas given are for the typical characteristics only.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 364/449
MC14549B, MC14559B
SWITCHING TIME TEST CIRCUIT AND WAVEFORMS
1
fcltWH(cl)
50%
50%
tsu
tsu ts
tPLH
50%
50% 90% 1tTLH
Sout
Q7
D
SC
C
NOTE: Pin 10 = VSS
C
CL
CL
CL
CL
CL
CL
CL
CL
CL
VDD
VSS
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
EOC
Sout
C
SC
FF(MR)
D
PROGRAMMABLE
PULSE
GENERATOR
TIMING DIAGRAM
CLOCK
SCD
Q7
Q6
Q5
Q4
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 365/449
Q3
Q2
Q1
MC14549B, MC14559B
OPERATING CHARACTERISTICS
Both the MC14549B and MC14559B can be operated ineither the “free run” or “strobed operation” mode forconversion schemes with any number of bits. Reliablecascading and/or recirculating operation can be achieved if the End of Convert (EOC) output is used as the controllingfunction, since with EOC = 0 (and with SC = 1 forMC14549B but either 1 or 0 for MC14559B) no stable stateexists under continual clocked operation. The MC14559Bwill automatically recirculate after EOC = 1 duringexternally strobed operation, provided SC = 1.
All data and control inputs for these devices are triggeredinto the circuit on the positive edge of the clock pulse.
Operation of the various terminals is as follows:C = Clock — A positive–going transition of the Clock is
required for data on any input to be strobed into the circuit.SC = Start Convert — A conversion sequence is initiated
on the positive–going transition of the SC input onsucceeding clock cycles.
D = Data in — Data on this input (usually from acomparator in A/D applications) is also entered into thecircuit on a positive–going transition of the clock. This inputis Schmitt triggered and synchronized to allow fast responseand guaranteed quality of serial and parallel data.
MR = Master Reset (MC14549B Only) — Resets alloutput to 0 on positive–going transitions of the clock. If removed while SC = 0, the circuit will remain reset until SC= 1. This allows easy cascading of circuits.
FF = Feed Forward (MC14559B Only) — Providesregister shortening by removing unwanted bits from asystem.
For operation with less than 8 bits, tie the output following
the least significant bit of the circuit to EOC. E.g., for a 6–bit
conversion, tie Q1 to FF; the part wilthe timing diagram less two bit timeswill still operate and must be disrega
For 8–bit operation, FF is tied to VFor applications with more than 8 bu
the basic connections shown in FigureMC14559B is used to shorten the setto the least significant bit used in thEOC to provide the cascading signal,transition of serial information from MC14549B. The Serial Out (Sout) inMC14559B remains inactive one cyclwhile Sout of the MC14549B remaisecond clock cycle of its operation.
Qn = Data Outputs — After a conQ’s on succeeding cycles go high andreset dependent upon the state ofconditionally reset they remain in thecircuit is either reset or reinitiated.
EOC = End of Convert — This onegative–going transition of the clockthe MC14559B) or the conditional resettling of the digital circuitry prior to indication. Therefore either level orindicate complete conversion.
Sout = Serial Out — Transmitsfashion. Serial data occurs during the corresponding parallel data bit is conOut is inhibited on the initial periodcircuit is reset, and on the second cyclThis provides efficient operation whe
Q7 Q6 Q5 Q4 Q0 EOCFF
SC
C D Sout
MC14559B
••
*
FROM A/D
COMPARATOR
Q7 Q6 Q5MR
SC
C D Sout
MC14549B
Q4 Q3 Q2 Q1 Q0 EOC
EXTERNAL
CLOCK1/4 MC14001
SE
(C
U
13
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 366/449
Q7 Q6 Q5 Q4 Q0 EOC
NCMSB
TO D/A AND PARALLEL DATA
••
**
Q7 Q6 Q5
LSB
Q4 Q3 Q2 Q1 Q0 EOC
MC14549B, MC14559B
TYPICAL APPLICATIONS
Externally Controlled 6–Bit ADC (Figure 2)
Several features are shown in this application:
• Shortening of the register to six bits by feeding theseventh output bit into the FF input.
• Continuous conversion, if a continuous signal is appliedto SC.
• Externally controlled updating (the start pulse must beshorter than the conversion cycle).
• The EOC output indicating that the parallel data are validand that the serial output is complete.
Continuously Cycling 8–Bit ADC (Figure 3)
This ADC is running continuously because the EOCsignal is fed back to the SC input, immediately initiating anew cycle on the next clock pulse.
Continuously Cycling 12–Bit ADC
Because each successive approxim
has a capability of handling only anmust be cascaded to make an ADC wit
When it is necessary to cascade twSAR must have a stable resettable stawaiting a subsequent start signal. Hmust not have a stable resettable sbecause during switch–on or due to ofirst stage has entered a reset state,remain in a stable non–functional con
This 12–bit ADC is continuously rwell as the parallel outputs are updclock pulse. The EOC pulse indicates12–bit conversion cycle, the end of tand the validity of the parallel data ou
Figure 2. Externally Controlled 6–Bit ADC
TO DAC
SCC
Sout
Q7 Q6 Q5
MC14559B
Q4 Q3 Q2 Q1 Q0 EOCFF
SC
C
Sout
Q7 Q6 Q5
MC14559B
Q4 Q3 Q2 Q1 Q0 EOCFF
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 367/449
TO DAC
Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 EOCFF
MC14549B, MC14559B
Q7 Q6 Q5MRSC
C
SoutMC14549B
Q4 Q3 Q2 Q1 Q0 EOC
TO DAC
Q7 Q6 Q5
SC
C Sout
MC14559B
Q4 Q3 Q2 Q1 Q0 EOC
TO DAC
FF
EOC
Figure 4. Continuously Cycling 12–Bit ADC
Externally Controlled 12–Bit ADC (Figure 5)
In this circuit the external pulse starts the first SAR andsimultaneously resets the cascaded second SAR. When Q4of the first SAR goes high, the second SAR startsconversion, and the first one stops conversion. EOCindicates that the parallel data are valid and that the serialoutput is complete. Updating the output data is started withevery external control pulse.
Additional Motorola Parts for Succ
Approximation ADC
Monolithic digital–to–analog
MC1408/1508 converter has eight–available with 6, 7, and 8–amplifier–comparator block —
contains a high speed operational ampcomparator with adjustable window.
With these two linear parts it is SA–ADCs with an accuracy of up to register one MC14549B or one MC1CMOS block will be necessary tofrequency.
Additional information on succeADC is found in Motorola Applicatio
Q7 Q6 Q5MR
SCC
SoutMC14549B
Q4 Q3 Q2 Q1 Q0 EOC
S t
TO DAC
Q7 Q6 Q5
SCC Sout
MC14559B
Q4 Q3 Q2 Q1 Q0 EOC
TO DAC
FF
EOC
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 368/449
Figure 5. Externally Controlled 12–Bit ADC
SoutEOC
The MC14551B is a digitally–controlled analog switch. This deviceimplements a 4PDT solid state switch with low ON impedance andvery low OFF Leakage current. Control of analog signals up to thecomplete supply voltage range can be achieved.
• Triple Diode Protection on All Control Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Analog Voltage Range (VDD – VEE) = 3.0 to 18 V
Note: VEE must be VSS
• Linearized Transfer Characteristics• Low Noise — 12 nV√Cycle, f ≥ 1.0 kHz typical• For Low RON, Use The HC4051, HC4052, or HC4053 High–Speed
CMOS Devices• Switch Function is Break Before Make
MAXIMUM RATINGS (2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range
(Referenced to VEE, VSS ≥ VEE)
– 0.5 to + 18.0 V
Vin, Vout Input or Output Voltage (DC orTransient) (Referenced to VSS for
Control Input & VEE for Switch I/O)
– 0.5 to VDD + 0.5 V
Iin Input Current (DC or Transient),
per Control Pin
± 10 mA
Isw Switch Through Current ± 25 mA
PD Power Dissipation, per Package (3.) 500 mW
TA Ambient Temperature Range – 55 to + 125 C
Tstg Storage Temperature Range – 65 to + 150 C
TL Lead Temperature
(8–Second Soldering)
260 C
2 M i R ti th l b d hi h d t th d i
Device Packag
ORDERING INF
MC14551BCP PDIP–1
MC14551BD SOIC–1
http://onsem
MC14551BDR2 SOIC–1
PDIP–1
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 75
A = Asse
WL or L = Wafe
YY or Y = Year
WW or W = Work
SOEIAJ–
F SUFFI
CASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 369/449
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
MC14551BF SOEIAJ–
1. For ordering information the SOIC packages, pleaON Semiconductor repres
MC14551B
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Z1
Z
W
W0
VDD
CONTROL
Y1
Z0
X
X1
X0
W1
VSS
VEE
Y0
Y
PIN ASSIGNMENT
VDD = Pin 16
VSS = Pin 8VEE = Pin 7
NOTE: Control Input referenced to VSS, Analog Inputs and
Outputs reference to VEE. VEE must be VSS.
Control ON
0 W0 X0 Y0 Z0
1 W1 X1 Y1 Z1
12
11
106
3
2
1
15
9
13
5
4
14
SWITCHES
IN/OUT
COMMONS
OUT/IN
CONTROL
W0
W1
X0
X1
Y0Y1
Z0
Z1
W
X
Y
Z
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 370/449
MC14551B
ELECTRICAL CHARACTERISTICS
– 55 C 25 C
Characteristic Symbol VDD Test Conditions Min Max Min Typ (4.) Max
SUPPLY REQUIREMENTS (Voltages Referenced to VEE)
Power Supply Voltage
Range
VDD — VDD – 3.0 ≥ VSS ≥
VEE
3.0 18 3.0 — 18
Quiescent Current Per
Package
IDD 5.0
10
15
Control Inputs: Vin =
VSS or VDD,
Switch I/O: VEE VI/O
VDD, and ∆Vswitch
500 mV (5.)
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
Total Supply Current
(Dynamic Plus
Quiescent, Per Package)
ID(AV) 5.0
10
15
TA = 25 C only (The
channel component,
(Vin – Vout)/Ron, is
not included.)
(0.07 µA/kHz) f + Typical (0.20 µA/kHz) f +
(0.36 µA/kHz) f +
CONTROL INPUT (Voltages Referenced to VSS)
Low–Level Input Voltage VIL 5.0
10
15
Ron = per spec,
Ioff = per spec
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
High–Level Input Voltage VIH 5.0
10
15
Ron = per spec,
Ioff = per spec
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
Input Leakage Current Iin 15 Vin = 0 or VDD — ± 0.1 — ± 0.00001 ± 0.1
Input Capacitance Cin — — — — 5.0 7.5
SWITCHES IN/OUT AND COMMONS OUT/IN — W, X, Y, Z (Voltages Referenced to VEE)
Recommended Peak–to–
Peak Voltage Into or Out
of the Switch
VI/O — Channel On or Off 0 VDD 0 — VDD
Recommended Static or
Dynamic Voltage Acrossthe Switch (5.) (Figure 3)
∆Vswitch — Channel On 0 600 0 — 600
Output Offset Voltage VOO — Vin = 0 V, No Load — — — 10 —
ON Resistance Ron 5.0
10
15
∆Vswitch 500 mV (5.),
Vin = VIL or VIH
(Control), and Vin =
0 to VDD (Switch)
—
—
800
400
220
—
—
—
250
120
80
1050
500
280
∆ON Resistance Between
Any Two Channels
in the Same Package
∆Ron 5.0
10
15
—
—
—
70
50
45
—
—
—
25
10
10
70
50
45
Off–Channel Leakage
Current (Figure 8)
Ioff 15 Vin = VIL or VIH
(Control) Channel to
Channel or Any One
— ± 100 — ± 0.05 ± 100
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 371/449
Channel
Capacitance, Switch I/O CI/O — Switch Off — — — 10 —
Capacitance, Common O/I CO/I — — — — 17 —
MC14551B
ELECTRICAL CHARACTERISTICS (CL = 50 pF, TA = 25 C, VEE VSS)
Characteristic Symbol
VDD – VEE
Vdc Min Typ (6.)
Propagation Delay TimesSwitch Input to Switch Output (RL = 10 kΩ)
tPLH, tPHL = (0.17 ns/pF) CL + 26.5 ns
tPLH, tPHL = (0.08 ns/pF) CL + 11 ns
tPLH, tPHL = (0.06 ns/pF) CL + 9.0 ns
tPLH, tPHL
5.0
10
15
—
—
—
35
15
12
Control Input to Output (RL = 10 kΩ)
VEE = VSS (Figure 4)
tPLH, tPHL
5.0
10
15
—
—
—
350
140
100
Second Harmonic Distortion
RL = 10 kΩ, f = 1 kHz, Vin = 5 Vp–p
— 10 — 0.07
Bandwidth (Figure 5)
RL = 1 kΩ, Vin = 1/2 (VDD – VEE) p–p,
20 Log (Vout /Vin) = – 3 dB, CL = 50 pF
BW 10 — 17
Off Channel Feedthrough Attenuation, Figure 5
RL = 1 kΩ, Vin = 1/2 (VDD – VEE) p–p,
fin = 55 MHz
— 10 — – 50
Channel Separation (Figure 6)
RL = 1 kΩ, Vin = 1/2 (VDD – VEE) p–p,
fin = 3 MHz
— 10 — – 50
Crosstalk, Control Input to Common O/I, Figure 7
R1 = 1 kΩ, RL = 10 kΩ,
Control tr = tf = 20 ns
— 10 — 75
6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 372/449
MC14551B
Figure 1. Switch Circuit Schematic
IN/OUT OUT/I
VDD VDD VDD
VEE
VDD
VEE
LEVEL
CONVERTED
CONTROLIN/OUT OUT/IN
CONTROL
CONTROL 9
W0 15
W1 1
X0 2
X1 3
Y0 6
Y1 10
Z0 11
Z1 12
8 7
16 VDD
VEE
14 W
4 X
5 Y
13 Z
CONTROLLEVEL
CONVERTER
VSS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 373/449
Figure 2. MC14551B Functional Diagram
MC14551B
TEST CIRCUITS
Figure 3. ∆V Across Switch Figure 4. Propagation De
Control to Outp
CONTROL
SECTION
OF IC
SOURCE
VLOAD
ON SWITCH
PULSE
GENERATOR CONTROL
VDD
Figure 5. Bandwidth and Off–Channel
Feedthrough Attenuation
Figure 6. Channel Se
(Adjacent Channels Used
CONTROL Vout
CL = 50 pFRL
Vin
CONTROL
OFF
ON
VinVDD – VEE
2
Figure 7. Crosstalk, Control Inputto Common O/I
Figure 8. Off Channel
CONTROL Vout
CL = 50 pFRL
R1
CONTROL
SECTION
OF IC
OFF CHA
OTHE
CHAN
Control input used to turn ON or OFF
the switch under test.
VDD – VEE
2
V
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 374/449
VDD
KEITHLEY 160
DIGITAL
MULTIMETER
MC14551B
TYPICAL RESISTANCE CHARACTERISTICS
Figure 10. VDD @ 7.5 V, VEE @ – 7.5 V Figure 11. VDD @ 5.0 V,
350
300
250
200
150
100
50
0 – 8.0 – 10 – 6.0 – 4.0 – 2.0 0 2.0 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (VOLTS)
R O N ,
“ O N ” R E S I S T A N C E ( O H M S )
TA = 125°C
– 55°C
350
300
250
200
150
100
50
0 – 8.0 – 10 – 6.0 – 4.0 – 2.0 0 2
Vin, INPUT VOLTAGE (
R O N ,
“ O N ” R E S I S T A N C E ( O H M S )
25°C
700
600
500
400
300
200
100
0 – 8.0 – 10 – 6.0 – 4.0 – 2.0 0 2.0 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (VOLTS)
R O N ,
“ O N ” R E S I S T A N C E ( O H M S )
TA = 125°C
– 55°C
25°C
350
300
250
200
150
100
50
0 – 8.0 – 10 – 6.0 – 4.0 – 2.0 0 2
Vin, INPUT VOLTAGE (
R O N ,
“ O N ” R E S I S T A N C E ( O H M S )
TA = 25°C
VD
Figure 12. VDD @ 2.5 V, VEE @ – 2.5 V Figure 13. Comparison at 25
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 375/449
MC14551B
APPLICATIONS INFORMATION
Figure A illustrates use of the on–chip level converterdetailed in Figure 2. The 0–to–5 volt Digital Control signal
is used to directly control a 9 Vp–p analog signal.The digital control logic levels are determined by VDD
and VSS. The VDD voltage is the logic high voltage; the VSSvoltage is logic low. For the example, VDD = + 5 V = logichigh at the control inputs; VSS = GND = 0 V = logic low.
The maximum analog signal level is determined by VDDand VEE. The VDD voltage determines the maximumrecommended peak above VSS. The VEE voltagedetermines the maximum swing below VSS. For the
example, VDD – VSS = 5 volt maximum swing above VSS;VSS – VEE = 5 volt maximum swing below VSS. Theexample shows a ± 4.5 volt signal which allows a 1/2 volt
margin at each peak. If voltage transiebelow VEE are anticipated on the ana
diodes (Dx) are recommended as shodiodes should be small signal typemaximum anticipated current surges
The absolute maximum potentiaVDD and VEE is 18.0 volts. Most parup to 15 volts which is the recodifference between VDD and VEE.
Balanced supplies are not requiredbe greater than or equal to VEE. F
+ 10 volts, VSS = + 5 volts, and VEE =See the table below.
Figure A. Application Example
EXTERNAL
CMOS
DIGITAL
CIRCUITRY
9 Vp–p
ANALOG SIGNAL
0–TO–5 V DIGITAL
CONTROL SIGNAL
VDD VSS VEE
SWITCH
I/O COMMON
O/I
CONTROL
MC14551B
– 5 V+5 V
9 Vp–p
ANALOG SIGNAL
VDD VDD
VEE VEE
Dx
Dx
Dx
Dx
SWITCH
I/O
COMMON
O/I
Figure B. External Schottky or Germanium Clipping Diodes
+5 V
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 376/449
POSSIBLE SUPPLY CONNECTIONS
V V VControl Inputs
Logic High/Logic Low Maximum Analog Signal
The MC14553B 3–digit BCD counter consists of 3 negative edgetriggered BCD counters that are cascaded synchronously. A quad latchat the output of each counter permits storage of any given count. Theinformation is then time division multiplexed, providing one BCDnumber or digit at a time. Digit select outputs provide display control.All outputs are TTL compatible.
An on–chip oscillator provides the low–frequency scanning clock
which drives the multiplexer output selector.This device is used in instrumentation counters, clock displays,digital panel meters, and as a building block for general logicapplications.
• TTL Compatible Outputs• On–Chip Oscillator• Cascadable• Clock Disable Input
• Pulse Shaping Permits Very Slow Rise Times on Input Clock• Output Latches• Master Reset
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin Input Current
(DC or Transient) per Pin
±10 mA
Iout Output Current
(DC or Transient) per Pin
+20 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
( S d S ld i )
260 °C
http://onsem
A = Assem
WL or L = Wafer
YY or Y = YearWW or W = Work
Device Packag
ORDERING INF
MC14553BCP PDIP–
MC14553BDW SOIC–
PDIP–16
P SUFFI
CASE 64
SOIC–16
DW SUFF
CASE 751
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 377/449
(8–Second Soldering)
1. Maximum Ratings are those values beyond which damage to the devicemay occur.
MC14553B
BLOCK DIAGRAM
12
10
11
13
9
7
6
5
14
2
1
15
VDD = PIN 16
VSS = PIN 8
4 3
CLOCK
LE
DIS
MR
Q0
Q1
Q2
Q3
O.F.
DS1
DS2
DS3
CIA CIB
TRUTH TABLE
Inputs
Master
Reset Clock Disable LE Outputs
0 0 0 No Change
0 0 0 Advance
0 X 1 X No Change
0 1 0 Advance
0 1 0 No Change
0 0 X X No Change
0 X X Latched
0 X X 1 Latched
1 X X 0 Q0 = Q1 = Q2 = Q3 = 0
X = Don’t Care
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 378/449
MC14553B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” LevelVin = VDD or 0
VOL 5.010
15
— —
—
0.050.05
0.05
— —
—
00
0
0.050.05
0.05
— —
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO
= 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 4.6 Vdc) Source —
(VOH = 9.5 Vdc) Pin 3
(VOH = 13.5 Vdc)
IOH
5.0
10
15
– 0.25
– 0.62
– 1.8
—
—
—
– 0.2
– 0.5
– 1.5
– 0.36
– 0.9
– 3.5
—
—
—
0.
0.
1
(VOH = 4.6 Vdc) Source —
(VOH = 9.5 Vdc) Other
(VOH = 13.5 Vdc) Outputs
5.0
10
15
– 0.64
– 1.6
– 4.2
—
—
—
– 0.51
– 1.3
– 3.4
– 0.88
– 2.25
– 8.8
—
—
—
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink —
(VOL = 0.5 Vdc) Pin 3
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.5
1.1
1.8
—
—
—
0.4
0.9
1.5
0.88
2.25
8.8
—
—
—
0.
0.
1.
(VOL = 0.4 Vdc) Sink — Other
(VOL = 0.5 Vdc) Outputs
(VOL = 1.5 Vdc)
5.0
10
15
3.0
6.0
18
—
—
—
2.5
5.0
15
4.0
8.0
20
—
—
—
1
3
1
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
MR = VDD
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.010
0.020
0.030
5.0
10
20
—
—
—
Total Supply Current (4.) (5.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.35 µA/kHz) f + IDD
IT = (0.85 µA/kHz) f + IDD
IT = (1.50 µA/kHz) f + IDD
3. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe4. The formulas given are for the typical characteristics only at 25 C.5. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 379/449
T( L) T( p ) ( L )
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004.
MC14553B
SWITCHING CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
Characteristic Figure Symbol VDD Min Typ (7.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 nstTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
2a tTLH,
tTHL 5.010
15
— —
—
10050
40
Clock to BCD Out 2a tPLH,
tPHL
5.0
10
15
—
—
—
900
500
200
Clock to Overflow 2a tPHL 5.0
10
15
—
—
—
600
400
200
Reset to BCD Out 2b tPHL
5.0
10
15
—
—
—
900
500
300
Clock to Latch Enable Setup Time
Master Reset to Latch Enable Setup Time
2b tsu 5.0
10
15
600
400
200
300
200
100
Removal Time
Latch Enable to Clock
2b trem 5.0
10
15
– 80
– 10
0
– 200
– 70
– 50
Clock Pulse Width 2a tWH(cl) 5.0
10
15
550
200
150
275
100
75
Reset Pulse Width 2b tWH(R) 5.0
10
15
1200
600
450
600
300
225
Reset Removal Time — trem 5.0
10
15
– 80
0
20
– 180
– 50
– 30
Input Clock Frequency 2a fcl 5.0
1015
—
— —
1.5
5.07.0
Input Clock Rise Time 2b tTLH 5.0
10
15
No
Limit
Disable, MR, Latch Enable
Rise and Fall Times
— tTLH,
tTHL
5.0
10
15
—
—
—
—
—
—
Scan Oscillator Frequency
(C1 measured in µF)
1 fosc 5.0
1015
—
— —
1.5/C1
4.2/C17.0/C1
6. The formulas given are for the typical characteristics only at 25 C.7. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 380/449
MC14553B
Figure 1. 3–Digit Counter Timing Diagram (Reference Figure 3)
9 9 2
9 9 1
9 9 0
9 0 1
9 0 0
8 9 9
1 0 1
1 0 0
9 9
9 8
9 7
9 6
9 5
9 4
9 3
9 2
9 1
9 0
8 9
8 8
8 7
8 6
1 7
1 6
1 5
1 4
1 3
1 2
1 1
1 0
9 8 7 6 5 4 3 2 1
UNITS CLOCK
UNITS Q0
UNITS Q1
UNITS Q2
UNITS Q3
TENS CLOCK
TENS Q0
TENS Q3
HUNDREDS
CLOCK
HUNDREDS Q0
HUNDREDS Q3
DISABLE
OVERFLOW
MASTERRESET
SCAN
OSCILLATOR
DIGIT SELECT 1
DIGIT SELECT 2
DIGIT SELECT 3
UP AT 80 UP
UP AT 800(DISABLES CLOCK WHEN HIGH)
UNITS
TENS
HUNDREDS
PULSEGENERATOR
(a)16 VDD
Q3
Q2
Q1
Q0
O.F.
DS1
DS2
DS3
8 VSS
C
LE
DIS
MR
CL
CL
CL
CL
CL
GENERATOR
1
(b)VDD
Q3C
20 ns20 ns
90%10%
tPLHtPHL
tTHLtTLH
10% 90% 50%
9 9 9
tTLH
50%
OVERFLOW
BCD OUT
CLOCK
90%
10%
tremtsu
CLOCK
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 381/449
1 Q2
Q1
Q0LE C
CL
CL
GENERATOR50%LATCH
ENABLE
MC14553B
OPERATING CHARACTERISTICS
The MC14553B three–digit counter, shown in Figure 3,consists of three negative edge–triggered BCD counters
which are cascaded in a synchronous fashion. A quad latchat the output of each of the three BCD counters permitsstorage of any given count. The three sets of BCD outputs(active high), after going through the latches, are timedivision multiplexed, providing one BCD number or digit ata time. Digit select outputs (active low) are provided fordisplay control. All outputs are TTL compatible.
An on–chip oscillator provides the low frequencyscanning clock which drives the multiplexer output selector.
The frequency of the oscillator can be controlled externallyby a capacitor between pins 3 and 4, or it can be overriddenand driven with an external clock at pin 4. Multiple devicescan be cascaded using the overflow output, which providesone pulse for every 1000 counts.
The Master Reset input, when takethree BCD counters and the multipl
While Master Reset is high the digitone; but all three digit select outputs adisplay life, and the scan oscillator is iinput, when high, prevents the input clcounters, while still retaining the last ccircuit at the clock input permits theoperating on input pulses with veInformation present in the counters goes high, will be stored in the latche
while the latch input is high, indepeInformation can be recovered fromcounters have been reset if Latch during the entire reset cycle.
PULSE
SHAPER
CLOCK12
11DISABLE
(ACTIVEHIGH)
C
R
Q0
Q1
Q2
Q3÷ 10
UNITS
C
R
Q0
Q1
Q2
Q3÷ 10
TENS
C
R
Q0
Q1
Q2
Q3÷ 10
10LATCH ENABLE
QUAD
LATCH
QUAD
LATCH
QUAD
LATCH
R
R
SCAN
OSCILLATOR
SCANNER
PU
GENEC1
4
3
C1A
C1B
MULTIPLEXER
9
7
6
5
Q0
Q1
Q2
Q3
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 382/449
Q3÷ 10
HUNDREDS
MC14553B
Figure 4 Six Digit Display
V D D
S T R O B E
R E S E T
C L O C K
I N P U T
1 0
1 3
5
6
7
9
1 5
1
2
1 4 3 4
1 2 1 1
C L K
D I S Q
3
Q 2
Q 1
Q 0
D S 3 D S 2
D S 1
C 1 A
C 1 B
O . F .
µ 0 . 0
0 1
F
5 3 2 4 6 1 7 A B C D P
h L D
B I
a b c d e f g 9 1
0 1 1
1 2
1 3
1 5
1 4
M C 1 4 5 4 3 B
L S D
V D D
D I S P
L A Y S A R E L O W
C U R R E N T L E D
M S D
V D D
5 3 2 4 6 1 7 A B C D P
h L D
B I
a b c d e f g
9 1 0
1 1
1 2
1 3
1 5
1 4
M C 1 4 5 4 3 B
1 0
1 3
5
6
7
9
1 5
1
2
1 4 3 4
1 2 1
1
C L K
D I S Q
3
Q 2
Q 1
Q 0
D S 3 D S 2 D S 1
C 1 A
C 1 B
O . F .
M C 1 4 5 5 3 B
M C 1 4 5 5 3 B
L E
M R
L E
M R
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 383/449
Figure 4. Six–Digit Display
The MC14555B and MC14556B are constructed withcomplementary MOS (CMOS) enhancement mode devices. EachDecoder/Demultiplexer has two select inputs (A and B), an active lowEnable input (E), and four mutually exclusive outputs (Q0, Q1, Q2,Q3). The MC14555B has the selected output go to the “high” state,and the MC14556B has the selected output go to the “low” state.Expanded decoding such as binary–to–hexadecimal (1–of–16), etc.,can be achieved by using other MC14555B or MC14556B devices.
Applications include code conversion, address decoding, memoryselection control, and demultiplexing (using the Enable input as a datainput) in digital data transmission systems.
• Diode Protection on All Inputs• Active High or Active Low Outputs• Expandable
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• All Outputs Buffered• Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2 Maximum Ratings are those values beyond which damage to the device
http://onsem
X = Specif
A = Assem
WL or L = WaferYY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14555BCP PDIP–
MC14555BD SOIC–
MC14555BDR2 SOIC–
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14555BFEL SOEIAJ–
MC14555BF SOEIAJ–
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 384/449
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:MC14556BCP PDIP–
MC14555B, MC14556B
PIN ASSIGNMENTS
13
14
1516
9
10
11
125
4
3
21
8
7
6
Q0B
BB
AB
EB
VDD
Q3B
Q2B
Q1B
Q0A
BA
AA
EA
VSS
Q3A
Q2A
Q1A
13
14
1516
9
10
11
125
4
3
21
8
7
6
Q0B
BB
AB
EB
VDD
Q3B
Q2B
Q1B
Q0A
BA
AA
EA
VSS
Q3A
Q2A
Q1A
MC14555B MC14556B
TRUTH TABLE
Inputs Outputs
Enable Select MC14555B MC14556B
E B A Q3 Q2 Q1 Q0 Q3 Q2 Q1 Q0
0 0 0 0 0 0 1 1 1 1 00 0 1 0 0 1 0 1 1 0 1
0 1 0 0 1 0 0 1 0 1 1
0 1 1 1 0 0 0 0 1 1 1
1 X X 0 0 0 0 1 1 1 1
X = Don’t Care
BLOCK DIAGRAM
2 4
MC14555B MC14556B
3
1
14
13
15
5
6
7
1211
10
9
2 4
3
1
14
13
15
5
6
7
1211
10
9
VDD = PIN 16
VSS = PIN 8
A
B
E
Q0
Q1
Q2
Q3
A
B
E
Q0
Q1
Q2
Q3
A
B
E
Q0Q1
Q2
Q3
A
B
E
Q0Q1
Q2
Q3
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 385/449
MC14555B, MC14556B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” LevelVin = VDD or 0
VOL 5.010
15
— —
—
0.050.05
0.05
— —
—
00
0
0.050.05
0.05
— —
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.010
15
0.641.6
4.2
— —
—
0.511.3
3.4
0.882.25
8.8
— —
—
0.0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (0.85 µA/kHz) f + IDD
IT = (1.70 µA/kHz) f + IDD
IT = (2.60 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 386/449
MC14555B, MC14556B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH
, tTHL
= (1.5 ns/pF) CL
+ 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time — A, B to Output
tPLH, tPHL = (1.7 ns/pF) CL + 135 ns
tPLH, tPHL = (0.66 ns/pF) CL + 62 ns
tPLH, tPHL = (0.5 ns/pF) CL + 45 ns
tPLH,
tPHL 5.0
10
15
—
—
—
220
95
70
Propagation Delay Time — E to Output
tPLH, tPHL = (1.7 ns/pF) CL + 115 ns
tPLH, tPHL = (0.66 ns/pF) CL + 52 ns
tPLH, tPHL = (0.5 ns/pF) CL + 40 ns
tPLH,
tPHL 5.0
10
15
—
—
—
200
85
657. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
Figure 1. Dynamic Power Dissipation Signal Waveforms Figure 2. Dynamic S
All 8 outputs connect to respective CL loads.
f in respect to a system clock.
INPUT E LOW
20 ns 20 ns
90%50%
10%2f1
VDD
VSS
VDD
VSS
VOH
VOL
A INPUTS(50% DUTY CYCLE)
B INPUTS
(50% DUTY CYCLE)
OUTPUT Q1
20 ns
90%
50%10%
90%50%10%
90%50%10%
tPHL
tTHLtPLH
tTLH
INPUT A HIGH
INPUT B
OUTPUT Q3
MC14556B
OUTPUT Q3
MC14555B
LOGIC DIAGRAM
(1/2 of Dual)
*
*
*
Q0
Q1
B
A
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 387/449
* Q2
The MC14557B is a static clocked serial shift register whose lengthmay be programmed to be any number of bits between 1 and 64. Thenumber of bits selected is equal to the sum of the subscripts of theenabled Length Control inputs (L1, L2, L4, L8, L16, and L32) plusone. Serial data may be selected from the A or B data inputs with theA/B select input. This feature is useful for recirculation purposes. A
Clock Enable (CE) input is provided to allow gating of the clock ornegative edge clocking capability.
The device can be effectively used for variable digital delay lines orsimply to implement odd length shift registers.
• 1–64 Bit Programmable Length• Q and Q Serial Buffered Outputs• Asynchronous Master Reset• All Inputs Buffered
• No Limit On Clock Rise and Fall Times• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or one Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
±10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the device
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14557BCP PDIP–
MC14557BDW SOIC–
PDIP–16
P SUFFI
CASE 64
SOIC–16
DW SUFF
CASE 751
MC14557BDWR2 SOIC
SOEIAJ–1
F SUFFIX
CASE 96
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 388/449
may occur.3 Temperature Derating:
MC14557BDWR2 SOIC–
MC14557B
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
L32
L16
L8
L4
VDD
A/B SEL
Q
Q
CLOCK
RESET
L1
L2
VSS
A
B
CE
BLOCK DIAGRAM
TRUTH TABLE
Inputs Output
Rst A/B Clock CE Q
0 0 0 B
0 1 0 A
0 0 1 B
0 1 1 A
1 X X X 0
Q is the output of the first selected shift
register stage.
X = Don’t Care
121314
115
2976543
11
10
RESETCLOCKCEBAA/B SELECTL1L2L4L8L16
L32
Q
Q
VDD = PIN 16
VSS = PIN 8
LENGTH SELECT TRUTH TABLEL32 L16 L8 L4 L2 L1 Register Length
0 0 0 0 0 0 1 Bit
0 0 0 0 0 1 2 Bitss
0 0 0 1 0 0
5 Bits
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 389/449
0 0 0 1 0 1 6 Bits
MC14557B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” LevelVin = VDD or 0
VOL 5.010
15
— —
—
0.050.05
0.05
— —
—
00
0
0.050.05
0.05
— —
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.010
15
0.641.6
4.2
— —
—
0.511.3
3.4
0.882.25
8.8
— —
—
0.0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.010
0.020
0.030
5.0
10
20
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (1.75 µA/kHz) f + IDD
IT = (3.50 µA/kHz) f + IDD
IT = (5.25 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 390/449
MC14557B
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Rise and Fall Time, Q or Q Output
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 nstTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5
1015
—
— —
100
5040
Propagation Delay, Clock or CE to Q or Q
tPLH, tPHL = (1.7 ns/pF) CL + 215 ns
tPLH, tPHL = (0.66 ns/pF) CL + 97 ns
tPLH, tPHL = (0.5 ns/pF) CL + 65 ns
tPLH,
tPHL 5
10
15
—
—
—
300
130
90
Propagation Delay, Reset to Q or Q
tPLH, tPHL = (1.7 ns/pF) CL + 215 ns
tPLH, tPHL = (0.66 ns/pF) CL + 97 ns
tPLH, tPHL = (0.5 ns/pF) CL + 70 ns
tPLH,
tPHL 5
10
15
—
—
—
300
130
95
Pulse Width, Clock tWH(cl) 510
15
200100
75
9545
35
Pulse Width, Reset tWH(rst) 5
10
15
300
140
100
150
70
50
Clock Frequency (50% Duty Cycle) fcl 5
10
15
—
—
—
3.0
7.5
13.0
Setup Time, A or B to Clock or CE
Worst case condition: L1 = L2 = L4 = L8 =L16 = L32 = VSS (Register Length = 1)
tsu
510
15
700290
145
350130
85
Best case condition: L32 = VDD, L1 through L16 =
Don’t Care (Any register length from 33 to 64)
5
10
15
400
165
60
45
5
0
Hold Time, Clock or CE to A or B
Best case condition: L1 = L2 = L4 = L8 = L16 =
L32 = VSS (Register Length = 1)
th5
10
15
200
100
10
– 150
– 60
– 50
Worst case condition: L32 = VDD, L1 through L16 =Don’t Care (Any register length from 33 to 64)
510
15
400185
85
5025
22
Rise and Fall Time, Clock tr,
tf
5
10
15
No Limit
Rise and Fall Time, Reset or CE tr,
tf
5
10
15
—
—
—
—
—
—
Removal Time, Reset to Clock or CE trem 5
1015
160
8070
80
4035
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 391/449
MC14557B
TIMING DIAGRAM
1–bit length:
CE = 0
A/B = 1
L1 = L2 = L4 = L8 = L16 = L32 = 0
PWR
50%
tWH(cl)
th
50%
tsu
trem
50%
tTLH tTHL
tPHLtPHLtPLH
90%50%
10%
A INPUT
CLOCK
RESET
Q
1/fcl
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 392/449
MC14557B
LOGIC DIAGRAM
C
R
3 2 B I T
1 2 L 3 2
C
R
2 B I T
1 L 2
2 L 1 C
R
1 B I T
C
R
1 6 B I T
1 3
L 1 6
1 4
L 8 C
R
1 B I T
C
R
8 B I T
1 0
1 1
Q Q 1 5
L 4 C
R
4 B I T
V D
D =
P I N 1 6
V S S =
P I N 8
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 393/449
The MC14562B is a 128–bit static shift register constructed withMOS P–channel and N–channel enhancement mode devices in asingle monolithic structure. Data is clocked in and out of the shiftregister on the positive edge of the clock input. Data outputs areavailable every 16 bits, from 16 through bit 128. This complementaryMOS shift register is primarily used where low power dissipation
and/or high noise immunity is desired.• Diode Protection on All Inputs• Fully Static Operation• Cascadable to Provide Longer Shift Register Lengths• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
1. Maximum Ratings are those values beyond which damage to the device
may occur.2. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
http://onsem
A = Assem
WL or L = WaferYY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14562BCP PDIP–
PDIP–14
P SUFFI
CASE 64
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 394/449
g p p p p , in out
t th V (V V ) V
MC14562B
PIN ASSIGNMENT
11
1213
14
8
9
105
4
32
1
7
6
Q16
NC
DATAQ32
VDD
Q80
Q48
NC
Q128Q96
Q64
VSS
Q112
CLOCK
NC = NO CONNECTION
BLOCK DIAGRAM
10
13
9
1
82
6
3Q128
Q112
Q96Q80
Q64
Q48
Q32
Q16
12
5
DATA
CLOCK
VDD = PIN 14
VSS = PIN 7
Pins 4 and 11
not used.
LOGIC DIAGRAM
1 2 3 16 17 32 33 48 49
CLOCK 5
DATA IN 12
65 80 81 96
DC
Q
97
DC
Q
112
DC
Q
113
DC
Q
128
DC
Q DC
Q DC
Q DC
Q
DC
Q DC
Q DC
Q DC
QDC
Q DC
Q DC
Q DC
Q DC
Q
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 395/449
MC14562B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” LevelVin = VDD or 0
VOL 5.010
15
— —
—
0.050.05
0.05
— —
—
00
0
0.050.05
0.05
— —
—
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 05 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.010
15
0.641.6
4.2
— —
—
0.511.3
3.4
0.882.25
8.8
— —
—
0.0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.010
0.020
0.030
5.0
10
20
—
—
—
Total Supply Current (4.) (5.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (1.94 µA/kHz) f + IDD
IT = (3.81 µA/kHz) f + IDD
IT = (5.52 µA/kHz) f + IDD
3. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe4. The formulas given are for the typical characteristics only at 25 C.5. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT
is in µA (per package), CL
in pF, V = (VDD
– VSS
) in volts, f in kHz is input frequency, and k = 0.004.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 396/449
MC14562B
SWITCHING CHARACTERISTICS (6.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (7.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 nstTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
1015
—
— —
100
5040
Propagation Delay Time
Clock to Q
tPLH, tPHL = (1.7 ns/pF) CL + 515 ns
tPLH, tPHL = (0.66 ns/pF) CL + 217 ns
tPLH, tPHL = (0.5 ns/pF) CL + 145 ns
tPLH,
tPHL
5.0
10
15
—
—
—
600
250
170
Clock Pulse Width
(50% Duty Cycle)
tWH 5.0
10
15
600
220
150
300
110
75
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
1.9
5.6
8.0
Data to Clock Setup Time tsu(1) 5.0
10
15
– 20
– 10
0
– 170
– 64
– 60
tsu(0) 5.0
10
15
– 20
– 10
0
– 91
– 58
– 48
Data to Clock Hold Time th(1) 5.0
10
15
350
165
155
263
109
100
th(0) 5.0
10
15
350
200
140
267
140
93
Clock Input Rise and Fall Times tr, tf 5.0
10
15
—
—
—
—
—
—
6. The formulas given are for the typical characteristics only at 25 C.7. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 397/449
MC14562B
Figure 1. Power Dissipation Test Circuit and Waveforms
VDD
DATA
CLOCK
Q128
Q112
Q96
Q80
Q64Q48
Q32
Q16
VSS7
ID 500 µF
CL CL CL CL CL CL CL CL
foCLOCK
DATA
(f = 1/2 fo)
V
V
V
V
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 398/449
MC14562B
TIMING DIAGRAM
PULSE 1PIN
NO.’S
CLOCK 5
DATA IN 12
Q16 10
Q32 13
Q28 3
PULSE 16 PULSE 32 PULSE 1
AC TEST WAVEFORMS
CLOCK
DATA IN
Q16
CLOCK
DATA IN
Q16
PULSE 1 PULSE 2 PULSE 16 PULSE 1
50% 50% 50%90%
10%50%
tWH
tWL
trtf
50% 50%
tsu(0)
th(0)
50% 1
tPHL tTHL
PULSE 1 PULSE 2 PULSE 16 PULSE 1
50% 50% 50%
tWH
tWL
50%
50% 50%
tsu(1)th(1)
50%
tTHLtPLH
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 399/449
The MC14569B is a programmable divide–by–N dual 4–bit binaryor BCD down counter constructed with MOS P–channel andN–channel enhancement mode devices (complementary MOS) in amonolithic structure.
This device has been designed for use with the MC14568B phasecomparator/counter in frequency synthesizers, phase–locked loops,and other frequency division applications requiring low powerdissipation and/or high noise immunity.
• Speed–up Circuitry for Zero Detection• Each 4–Bit Counter Can Divide Independently in BCD or Binary
Mode• Can be Cascaded With MC14526B for
Frequency Synthesizer Applications
• All Outputs are Buffered• Schmitt Triggered Clock Conditioning
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
±10 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg
Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
1. Maximum Ratings are those values beyond which damage to the devicemay occur.
2. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14569BCP PDIP–
MC14569BDT TSSOP–
PDIP–16
P SUFFI
CASE 64
SOIC–16
DW SUFF
CASE 751
MC14569BDW SOIC–
TSSOP–1DT SUFFI
CASE 948
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 400/449
MC14569B
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
P5
P6
P7
Q
VDD
CLOCK
CTL2
P4
P1
P0
CTL1
ZERODETECT
VSS
CASCADEFEEDBACK
P3
P2
PIN ASSIGNMENT
BLOCK DIAGRAM
CTL = Low for Binary Count
CTL = High for BCD Count
CASCADEFEEDBACK
CLOCK9
7
V
CLOCK
LOAD
ZERO DETECT ENCODER
BINARY/BCD
COUNTER #1
BINARY/BCD
COUNTER #2
P0 P1 P2 P3 CTL1 CTL2 P4 P5 P6 P7
141312111026543
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 401/449
MC14569B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
Vin = 0 or VDD “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH 5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)(VOL = 1.5 Vdc)
IOL 5.0
1015
0.64
1.64.2
—
— —
0.51
1.33.4
0.88
2.258.8
—
— —
0.
02
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current (4.) (5.)
(Dynamic plus Quiescent,Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
1015
IT = (0.58 µA/kHz) f + IDD
IT = (1.20 µA/kHz) f + IDD
IT = (1.95 µA/kHz) f + IDD
3. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe4. The formulas given are for the typical characteristics only at 25 C.5. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 402/449
MC14569B
SWITCHING CHARACTERISTICS* (CL = 50 pF, TA = 25 C)
VDDAll Types
Characteristic Symbol Vdc Min Typ (6.)
Output Rise Time tTLH
5.0
10
15
—
—
—
100
50
40
Output Fall Time tTHL 5.0
10
15
—
—
—
100
50
40
Turn–On Delay Time
Zero Detect Output
tPLH
5.0
10
15
—
—
—
420
175
125
Q Output 5.010
15
— —
—
675285
200
Turn–Off Delay Time
Zero Detect Output
tPHL
5.0
10
15
—
—
—
380
150
100
Q Output 5.0
10
15
—
—
—
530
225
155
Clock Pulse Width tWH 5.0
10
15
300
150
115
100
45
30
Clock Pulse Frequency fcl 5.0
10
15
—
—
—
3.5
9.5
13.0
Clock Pulse Rise and Fall Time tTLH, tTHL 5.0
10
15
NO LIMIT
6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 403/449
MC14569B
SWITCHING WAVEFORMS
tWH
Figure 1.
Figure 2.
20 ns
20 ns
CLOCK
Q
CLOCK
ZERO DETECT
90%50%
10%
50%90%
10%
tPLH tPHL
20 ns
20 ns
90%50%
10%
tWH
tPLH
tPHL
90%
10%
tTLH tTHL
tTLH tTHL
fin = fmax
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 404/449
MC14569B
PIN DESCRIPTIONS
INPUTS
P0, P1, P2, P3 (Pins 3, 4, 5, 6) — Preset Inputs.
Programmable inputs for the least significant counter. Maybe binary or BCD depending on the control input.P4, P5, P6, P7 (Pins 11, 12, 13, 14) — Preset Inputs.
Programmable inputs for the most significant counter. Maybe binary or BCD depending on the control input.
Clock (Pin 9) — Preset data is decremented by one oneach positive transition of this signal.
OUTPUTS
Zero Detect (Pin 1) — This output is normally low and
goes high for one clock cycle when the counter hasdecremented to zero.
Q (Pin 15) — Output of the last stage of the mostsignificant counter. This output will be inactive unless thepreset input P7 has been set high.
CONTROLS
Cascade Feedback (Pin 7) — Th
high. When low, loading of the preset is inhibited, i.e., P0 through P7 are “Table 1 for output characteristics.
CTL1 (Pin 2) — This pin controlsthe least significant counter. When seis BCD. When set low, counting mod
CTL2 (Pin 10) — This pin controlsthe most significant counter. When seis BCD. When set low, counting mod
SUPPLY PINS
VSS (Pin 18) — Negative Supplyusually connected to ground.
VDD (Pin 16) — Positive Supplyconnected to a positive supply voltvolts to 18.0 volts.
OPERATING CHARACTERISTICS
The MC14569B is a programmable divide–by–N dual4–bit down counter. This counter may be programmed (i.e.,preset) in BCD or binary code through inputs P0 to P7. Foreach counter, the counting sequence may be chosenindependently by applying a high (for BCD count) or a low(for binary count) to the control inputs CTL1 and CTL2.
The divide ratio N (N being the value programmed on thepreset inputs P0 to P7) is automatically loaded into thecounter as soon as the count 1 is detected. Therefore, a
division ratio of one is not possible. After N clock cycles,
one pulse appears on the Zero DetecDiagram.) The Q output is the output most significant counter (See TableControls.)
When cascading the MC14569B tCascade Feedback input, Q, and Zerobe respectively connected to “0”, Clfollowing counter. If the MC14569B Feedback must be connected to VDD
18
16
14
12
10
8.0
6.0
4.0
2.0 f , F R E Q U E N C Y ( M H z ) , T Y P I C A L
CL = 50 pF
VDD = 15 V
10 V
5.0 V
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 405/449
MC14569B
Table 1. Mode Controls (Cascade Feedback = Low)
Counter Control Values Divide Ratio
CTL1 CTL2 Zero Detect Q
0 0 256 256
0 1 160 160
1 0 160 160
1 1 100 100
NOTE: Data Preset Inputs (P0–P7) are “Don’t Cares” while Cascade Feedback is
Low.
Table 2. Mode Controls (CTL1 = Low, CTL2 = Low, Cascade Feedback = High)
Preset Inputs Divide Ratio
P7 P6 P5 P4 P3 P2 P1 P0 ZeroDetect Q Com
0 0 0 0 0 0 0 0 256 256 Max
0 0 0 0 0 0 0 1 X X Illeg
0 0 0 0 0 0 1 0 2 X Min
0 0 0 0 0 0 1 1 3 X
X
X
X
0 0 0 0 1 1 1 1 15 X
0 0 0 1 0 0 0 0 16 XX
X
X
0 0 1 0 0 0 0 0 32 X
X
X
X
0 1 0 0 0 0 0 0 64 X
X
XX
0 1 1 1 1 1 1 1 127 X
1 0 0 0 0 0 0 0 128 128 Q Out
1 0 0 0 1 0 0 0 136 136
1 1 1 1 1 1 1 1 255 255
27 26 25 24 23 22 21 20
128 64 32 16 8 4 2 1 Bit
Counter #2
Binary
Counter #1
Binary
Co
Seq
X = No Output (Always Low)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 406/449
MC14569B
Table 3. Mode Controls (CTL1 = High, CTL2 = Low, Cascade Feedback = High)
Preset Inputs Divide Ratio
P7 P6 P5 P4 P3 P2 P1 P0
Zero
Detect Q Com
0 0 0 0 0 0 0 0 160 160 Ma
0 0 0 0 0 0 0 1 X X Illeg
0 0 0 0 0 0 1 0 2 X Min
0 0 0 0 0 0 1 1 3 X
X
X
X
0 0 0 0 1 0 0 1 9 X
0 0 0 1 0 0 0 0 10 X
X
XX
0 0 0 1 1 0 0 1 19 X
0 0 1 0 0 0 0 0 20 X
X
X
X
0 0 1 1 0 0 0 0 30 X
X
X
X0 1 0 0 0 0 0 0 40 X
X
X
X
0 1 0 1 0 0 0 0 50 X
X
X
X
0 1 1 0 0 0 0 0 60 X
XX
X
0 1 1 1 0 0 0 0 70 X
X
X
X
1 0 0 0 0 0 0 0 80 80 Q Out
1 0 0 1 0 0 0 0 90 90
1 1 1 1 0 0 0 0 150 150
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 407/449
MC14569B
Table 4. Mode Controls (CTL1 = Low, CTL2 = High, Cascade Feedback = High)
Preset Values Divide Ratio
P7 P6 P5 P4 P3 P2 P1 P0
Zero
Detect Q Com
0 0 0 0 0 0 0 0 160 160 Ma
0 0 0 0 0 0 0 1 X X Illeg
0 0 0 0 0 0 1 0 2 X Min
0 0 0 0 0 0 1 1 3 X
X
X
X
0 0 0 0 1 1 1 1 15 X
0 0 0 1 0 0 0 0 16 X
X
XX
0 0 0 1 1 1 1 1 31 X
0 0 1 0 0 0 0 0 32 X
X
X
X
0 0 1 1 0 0 0 0 48 X
0 1 0 0 0 0 0 0 64 X
0 1 0 1 0 0 0 0 80 X
0 1 1 1 0 0 0 0 112 X
1 0 0 0 0 0 0 0 128 128 Q Out
1 0 0 1 0 0 0 0 144 144
1 0 0 1 1 1 1 1 159 159
27 26 25 24 23 22 21 20
128 64 32 16 8 4 2 1 Bit
Counter #2
BCD
Counter #1
Binary
Co
Se
X = No Output (Always Low)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 408/449
MC14569B
Table 5. Mode Controls (CTL1 = High, CTL2 = High, Cascade Feedback = High)
Preset Values Divide Ratio
P7 P6 P5 P4 P3 P2 P1 P0
Zero
Detect Q Com
0 0 0 0 0 0 0 0 100 100 Ma
0 0 0 0 0 0 0 1 X X illeg
0 0 0 0 0 0 1 0 2 X Min
0 0 0 0 0 0 1 1 3 X
X
X
X
0 0 0 0 1 0 0 1 9 X
0 0 0 1 0 0 0 0 10 X
X
XX
0 0 1 1 0 0 0 0 30 X
X
X
X
0 1 0 0 0 0 0 0 40 X
X
X
X
0 1 0 1 0 0 0 0 50 XX
X
X
0 1 1 1 0 0 0 0 70 X
X
X
X
1 0 0 0 0 0 0 0 80 80 Q Out
1 0 0 1 0 0 0 0 90 90
1 0 0 1 1 0 0 1 99 99
80 40 20 10 8 4 2 1 Bit
Counter #2
BCD
Counter #1
BCD
Co
Se
X = No Output (Always Low)
TIMING DIAGRAM MC14569B
CLOCK 13121110987654321
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 409/449
MC14569B
LOGIC DIAGRAM
Q
DPEC
DP
Q
DPEC
DP
Q
DPEC
DP
Q
D
PE
C
DP
Q
D
PE
C
DP
Q
D
PE
C
DP
Q
DPEC
DP
Q
DPEC
DP
VDD
VDD
D
Q PE
DP C
D
Q PE
DP C
IU
2
CASCADE
FEEDBACK
7
3
4
5
6
9
11
12
CTL1
P0
P1
P2
P3
CLOCK
P4
P5
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 410/449
MC14569B
TYPICAL APPLICATIONS
Figure 3. Cascading MC14568B and MC14522B or MC14526B with MC14569B
finCF
C
MC14569B
ZERO DETECT
CFC
MC14522BOR
MC14526B
Q4
PE “0”
CFC
MC14522BOR
MC14526B
Q4
PE “0”
Q1/C2
PE
MC1456
LSD MS
DP0 – – – – – – DP3 DP0 – – – – – – DP3 DP0 – – – – –
Q
Figure 4. Frequency Synthesizer with MC14568B and MC14569B Using a Mixe
(Channel Spacing 10 kHz)
Frequencies shown in parenthesis are given as an example
(40 kHz)
VSS
PE
DP0 – – – – DP3
PCin
C1
CT1
“0”
PCout
G
F
Q1/C2
VSS
VSS
VCO
MC14011
CFQ
ZERO DETECT
C
2 M
MC14569B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 411/449
The MC14572UB hex functional gate is constructed with MOSP–channel and N–channel enhancement mode devices in a singlemonolithic structure. These complementary MOS logic gates findprimary use where low power dissipation and/or high noise immunityis desired. The chip contains four inverters, one NOR gate and oneNAND gate.
• Diode Protection on All Inputs•
Single Supply Operation• Supply Voltage Range = 3.0 Vdc to 18 Vdc• NOR Input Pin Adjacent to VSS Pin to Simplify Use As An Inverter• NAND Input Pin Adjacent to VDD Pin to Simplify Use As An
Inverter• NOR Output Pin Adjacent to Inverter Input Pin For OR Application• NAND Output Pin Adjacent to Inverter Input Pin For AND
Application
• Capable of Driving Two Low–power TTL Loads or One Low–PowerSchottky TTL Load over the Rated Temperature Range
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range(DC or Transient) –0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
±10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature(8–Second Soldering) 260°C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14572UBCP PDIP–
MC14572UBD SOIC–
MC14572UBDR2 SOIC–
1. For ordering information the SOIC packages, pleaON Semiconductor repres
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14572UBFEL SOEIAJ–
MC14572UBF SOEIAJ–
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 412/449
MC14572UB
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
INE
OUTF
IN 1F
IN 2F
VDD
OUTD
IND
OUTE
INB
OUTB
INA
OUTA
VSS
IN 2C
IN 1C
OUTC
LOGIC DIAGRAM
15
14
12
10
7
6
4
2
13
11
9
5
3
1
VDD = PIN 16
VSS = PIN 8
CIRCUIT SCHEMATIC
VDD
VDDVDD
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 413/449
MC14572UB
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 414/449
MC14572UB
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise Time
tTLH = (3.0 ns/pF) CL + 30 ns
tTLH = (1.5 ns/pF) CL + 15 nstTLH = (1.1 ns/pF) CL + 10 ns
tTLH
5.0
1015
—
— —
180
9065
Output Fall Time
tTHL = (1.5 ns/pF) CL + 25 ns
tTHL = (0.75 ns/pF) CL + 12.5 ns
tTHL = (0.55 ns/pF) CL + 9.5 ns
tTHL
5.0
10
15
—
—
—
100
50
40
Propagation Delay Time
tPLH, tPHL = (1.7 ns/pF) CL + 5 ns
tPLH, tPHL = (0.66 ns/pF) CL + 17 ns
tPLH, tPHL = (0.5 ns/pF) CL + 15 ns
tPLH,
tPHL 5.0
10
15
—
—
—
90
50
40
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
Figure 1. Switching Time Test Circuits and Waveforms
PULSE
GENERATOR
PULSEGENERATOR
INPUT
2
INPUT
15
VDD
VDD
16
16
8
8 VSS
VSS
CL
CL
1
13
OUTPUT
OUTPUT
PULSE
GENERATOR
INPUT
7
VDD
16
8 VSS
6
20 ns
trtf
90%50%
10%
90%50%
10%
90%50%
10%
90%
10%50%
INPUT
OUTPUT
tPHL tPLH
14
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 415/449
The MC14584B Hex Schmitt Trigger is constructed with MOSP–channel and N–channel enhancement mode devices in a singlemonolithic structure. These devices find primary use where low powerdissipation and/or high noise immunity is desired. The MC14584Bmay be used in place of the MC14069UB hex inverter for enhancednoise immunity to “square up” slowly changing waveforms.
• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load over the Rated Temperature Range• Double Diode Protection on All Inputs• Can Be Used to Replace MC14069UB• For Greater Hysteresis, Use MC14106B which is Pin–for–Pin
Replacement for CD40106B and MM74Cl4
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
± 10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the devicemay occur.
3. Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS (Vin or Vout) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
ith V V ) U d t t t b l ft
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
PDIP–14
P SUFFIX
CASE 64
SOIC–14
D SUFFIX
CASE 751
TSSOP–1
DT SUFF
CASE 948
SOEIAJ–1
F SUFFIXCASE 96
Device Packag
ORDERING INF
MC14584BCP PDIP–
MC14584BD SOIC–
MC14584BDR2 SOIC
MC14584B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 416/449
MC14584B
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
OUT 5
IN 5
OUT 6
IN 6
VDD
OUT 4
IN 4
OUT 2
IN 2
OUT 1
IN 1
VSS
OUT 3
IN 3
LOGIC DIAGRAM
13
11
9
5
3
1
12
10
8
6
4
2
VDD = PIN 14VSS = PIN 7
EQIVALENT CIRCUIT SCHEMATIC
(1/6 OF CIRCUIT SHOWN)
MC14584B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 417/449
MC14584B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD
VOL 5.0
1015
—
— —
0.05
0.050.05
—
— —
0
00
0.05
0.050.05
—
— —
Vin = 0 “1” Level VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH
= 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOL 5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.
0
2
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
—
—
—
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.0
10
15
IT = (1.8 µA/kHz) f + IDD
IT = (3.6 µA/kHz) f + IDD
IT = (5.4 µA/kHz) f + IDD
Hysteresis Voltage VH (7.) 5.0
10
15
0.27
0.36
0.77
1.0
1.3
1.7
0.25
0.3
0.6
0.6
0.7
1.1
1.0
1.2
1.5
0.
0.
0.
Threshold VoltagePositive–Going
VT+5.0
10
15
1.9
3.4
5.2
3.5
7.0
10.6
1.8
3.3
5.2
2.7
5.3
8.0
3.4
6.9
10.5
1
3
5
Negative–Going VT– 5.0
10
15
1.6
3.0
4.5
3.3
6.7
9.7
1.6
3.0
4.6
2.1
4.6
6.9
3.2
6.7
9.8
1
3
4
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
7. VH = VT+ – VT– (But maximum variation of VH is specified as less than VT + max – VT – min).
MC14584B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 418/449
MC14584B
SWITCHING CHARACTERISTICS (CL = 50 pF, TA = 25 C)
Characteristic Symbol
VDD
Vdc Min Typ (8.)
Output Rise Time tTLH 5.0
10
15
—
—
—
100
50
40
Output Fall Time tTHL 5.0
10
15
—
—
—
100
50
40
Propagation Delay Time tPLH, tPHL 5.0
10
15
—
—
—
125
50
40
8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
MC14584B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 419/449
Figure 1. Switching Time Test Circuit and Waveforms
PULSE
GENERATOR
VDD
INPUTCLVSS7
OUTPUT
20 ns
90%50%10%
90%
50%10%
tPHL
OUTPUT
INPUT
tf
VDD
VT+
VT–
VSS
VDD
VSS
Vout
Vin
VH VH
Vout
Vin
VDD
0VDDVT+VT–0
VH
Vin, INPUT VOLTAGE (Vdc)
V o u t ,
O U T P U T V O L T A G E ( V d c )
Figure 2. Typical Schmitt Trigger Applications
(b) A Schmitt trigger offers maximu
in gate application
(a) Schmitt Triggers will square up inputs with slow
rise and fall times.
Figure 3. Typical Transfer Characteristics
Vin Vout
14
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 420/449
The MC14585B 4–Bit Magnitude Comparator is constructed withcomplementary MOS (CMOS) enhancement mode devices. Thecircuit has eight comparing inputs (A3, B3, A2, B2, A1, B1, A0, B0),three cascading inputs (A < B, A = B, and A > B), and three outputs (A< B, A = B, and A > B). This device compares two 4–bit words (A andB) and determines whether they are “less than”, “equal to”, or “greaterthan” by a high level on the appropriate output. For words greater than4–bits, units can be cascaded by connecting outputs (A > B), (A < B),and (A = B) to the corresponding inputs of the next significantcomparator. Inputs (A < B), (A = B), and (A > B) on the leastsignificant (first) comparator are connected to a low, a high, and a low,respectively.
Applications include logic in CPU’s, correction and/or detection of instrumentation conditions, comparator in testers, converters, andcontrols.
• Diode Protection on All Inputs• Expandable• Applicable to Binary or 8421–BCD Code• Supply Voltage Range = 3.0 Vdc to 18 Vdc• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load over the Rated Temperature Range• Can be Cascaded – See Fig. 3
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
±10 mA
PD Power Dissipation,
per Package (Note 3.)
500 mW
TA Ambient Temperature Range –55 to +125 °C
Tstg Storage Temperature Range –65 to +150 °C
TL Lead Temperature
(8–Second Soldering)
260 °C
2 M i R i h l b d hi h d h d i
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14585BCP PDIP–
MC14585BD SOIC–
MC14585BDR2 SOIC–
1. For ordering information the SOIC packages, pleaON Semiconductor repres
PDIP–16
P SUFFI
CASE 64
SOIC–1
D SUFFI
CASE 751
SOEIAJ–
F SUFFI
CASE 96
MC14585BF SOEIAJ–
MC14585B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 421/449
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
(A B)out
(A B)out
B3
A3
VDD
B1
A0
B0
(A B)in
(A = B)out
A2
B2
VSS
A1
(A = B)in
(A B)in
BLOCK DIAGRAM
14
15
1
2
97
11
10
5
6
4
13
3
12
VDD = PIN 16
VSS = PIN 8
( A > B )in( A = B )in( A < B )inA0
B0
A1B1
A2
B2
A3
B3
( A > B )out
( A = B )out
( A < B )out
TRUTH TABLE (x = Don’t Care)
Inputs
Comparing Cascading Outputs
A3, B3 A2, B2 A1, B1 A0, B0 A < B A = B A > B A < B A = B A > B
A3 > B3 x x x x x x 0 0 1
A3 = B3 A2 > B2 x x x x x 0 0 1
A3 = B3 A2 = B2 A1 > B1 x x x x 0 0 1
A3 = B3 A2 = B2 A1 = B1 A0 > B0 x x x 0 0 1
A3 = B3 A2 = B2 A1 = B1 A0 = B0 0 0 x 0 0 1
A3 = B3 A2 = B2 A1 = B1 A0 = B0 0 1 x 0 1 0
A3 = B3 A2 = B2 A1 = B1 A0 = B0 1 0 x 1 0 0
A3 = B3 A2 = B2 A1 = B1 A0 = B0 1 1 x 1 1 0
A3 = B3 A2 = B2 A1 = B1 A0 < B0 x x x 1 0 0
MC14585B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 422/449
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (4.) Max M
Output Voltage “0” Level
Vin = VDD or 0
VOL 5.0
1015
—
— —
0.05
0.050.05
—
— —
0
00
0.05
0.050.05
—
— —
“1” Level
Vin = 0 or VDD
VOH 5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.
9.
14
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
“1” Level(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIH5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3
7
1
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
IOH
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
–
– 0
– 0
– 2
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)(VOL = 1.5 Vdc)
IOL 5.0
1015
0.64
1.64.2
—
— —
0.51
1.33.4
0.88
2.258.8
—
— —
0.
02
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance
(Vin = 0)
Cin — — — — 5.0 7.5 —
Quiescent Current
(Per Package)
IDD 5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
Total Supply Current(5.)
(6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT 5.010
15
IT = (0.6 µA/kHz) f + IDDIT = (1.2 µA/kHz) f + IDD
IT = (1.8 µA/kHz) f + IDD
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe5. The formulas given are for the typical characteristics only at 25 C.6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001.
MC14585B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 423/449
SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25 C)
Characteristic Symbol VDD Min Typ (8.)
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL 5.0
10
15
—
—
—
100
50
40
Turn–On, Turn–Off Delay Time
tPLH, tPHL = (1.7 ns/pF) CL + 345 ns
tPLH, tPHL = (0.66 ns/pF) CL + 147 ns
tPLH, tPHL = (0.5 ns/pF) CL + 105 ns
tPLH,
tPHL 5.0
10
15
—
—
—
430
180
130
7. The formulas given are for the typical characteristics only at 25 C.8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe
Figure 1. Dynamic Power Dissipation
Signal Waveforms
Figure 2. Dynamic Sign
20 ns
20 ns
2f
1
VDD
VSS
VDD
VSS
VOH
VOL
VOH
VOL
VOH
VOL
( A < B )out
( A = B )out
( A > B )out
B3
A3
20 ns
90%
50%
10%
tPLH
tTLH
90%
50%
10%
B0
( A = B )out
( A < B )out
Inputs (A>B) and (A=B) high, an
A2, B1, A1, A0, and (A<B) low.
Inputs (A>B) and (A=B) high, and inputs B2, A2, B1,
A1, B0, A0 and (A<B) low.
f in respect to a system clock.
MC14585B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 424/449
Figure 3. Cascading Comparators
B11 B10 B9 B8 B7 B6 B5 B4 B3 B2 B1 B0
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0V
WORDB =
A =WORD
MC14585B
MC14585B
MC14585BB3 A3 B2 A2 B1 A1 B0 A0
( A B
)
( A < B )
( A =
B )
( A > B )
OUTPUT
( A < B )
( A =
B )
( A > B )
OUTPUTS
WORD B = B11, B10, ..., B0.
WORD A = A11, A10, ..., A0.
15
14
2
1
7
9
10
11B0
A0
B1
A1
B2
A2
B3
A3
LOGIC DIAGRAM
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 425/449
The MC14598B is an 8–bit latch addressed with an external binaryaddress. The 8 latch–outputs are high drive, three–state and bus linecompatible. The drive capability allows direct applications with MPUsystems such as the Motorola 6800 family.
The latches of the MC14598B are accessed via the Address pins,A0, A1, and A2.
All 8 outputs from the latches are available in parallel when Enableis in the low state. Data is entered into a selected latch from the Datapin when the Strobe is high. Master reset is available on both parts.
• Serial Data Input• Three–State Bus Compatible Parallel Outputs• Three–State Control Pin (Enable) TTL Compatible Input• Open Drain Full Flag (Multiple Latch Wire–O Ring)• Master Reset•
Level Shifting Inputs on All Except Enable• Diode Protection — All Inputs• Supply Voltage Range — 3.0 Vdc to 18 Vdc• Capable of Driving TTL Over Rated Temperature Range
With Fanout as Follows:1 TTL Load4 LSTTL Loads
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 1.)
Symbol Parameter Value Unit
VDD DC Supply Voltage Range –0.5 to +18.0 V
Vin Input Voltage Range,
Enable (DC or Transient)
–0.5 to VDD + 0.5 V
Vin Input Voltage Range, All Other
Inputs (DC or Transient)
–0.5 to VDD + 12 V
Vout
Output Voltage Range,
(DC or Transient)
–0.5 to VDD
+ 0.5 V
Iin, Iout Input or Output Current
(DC or Transient) per Pin
±10 mA
PD Power Dissipation,
per Package (Note 2.)
500 mW
http://onsem
A = Assem
WL or L = Wafer
YY or Y = Year
WW or W = Work
Device Packag
ORDERING INF
MC14598BCP PDIP–
1
18
PDIP–18P SUFFIX
CASE 707
This device contains prote
MC14598B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 426/449
PIN ASSIGNMENT
NC
DATA
RESET
D0
VSS
A1
A0
STROBE
ENABLE D3
D2
D1
VDD
A2
D7
D6
D5
D414
15
16
17
18
10
11
12
13
5
4
3
2
1
9
8
7
6
BLOCK DIAGRAMS
MC14598B
Enable O
1 High I
0
Dn = State of nth l
OUTPUTRUTH TA
NC = NO CO
1
17
16
15
14
13
12
11
D0
D1
D2
D3
D4
D5
D6
D7
ENABLE
4
THREE
STATE
OUTPUT
BUFFERS
8
LATCHESADDRESS
DECODER
VDD = 18VSS = 9
2
3
6
RESET
DATA
STROBE
A0
A1
A2
7
8
10
MC14598B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 427/449
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
VDD – 55 C 25 C
Characteristic Symbol Vdc Min Max Min Typ (3.) Max M
Output Voltage “0” LevelVin = VDD or 0
VOL 5.010
15
— —
—
0.050.05
0.05
— —
—
00
0
0.050.05
0.05
— —
—
“1” LevelVin = 0 or VDD
VOH 5.01015
4.959.9514.95
— — —
4.959.9514.95
5.01015
— — —
4.9.14
Input Voltage (4.) — Enable “0” Level(VO = 4.5 or 0.5 Vdc)(VO = 9.0 or 1.0 Vdc)(VO = 13.5 or 1.5 Vdc)
VIL5.01015
— — —
0.81.62.4
— — —
1.12.23.4
0.81.62.4
— — —
“1” Level(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)(VO = 1.5 or 13.5 Vdc)
VIH5.0
1015
2.0
6.010
—
— —
2.0
6.010
1.9
3.14.3
—
— —
2
61
Input Voltage “0” LevelOther Inputs(VO = 4.5 or 0.5 Vdc)(VO = 9.0 or 1.0 Vdc)(VO = 13.5 or 1.5 Vdc)
VIL
5.01015
— — —
1.53.04.0
— — —
2.254.506.75
1.53.04.0
— — —
(VO = 0.5 or 4.5 Vdc) “1” Level(VO = 1.0 or 9.0 Vdc)(VO = 1.5 or 13.5 Vdc)
VIH 5.01015
3.57.011
— — —
3.57.011
2.755.508.25
— — —
371
Output Drive Current Source(Full — Sink Only)(VOH = 4.6 Vdc)(VOH = 9.5 Vdc)(VOH = 13.5 Vdc)
IOH
5.0101 5
– 1.0 — —
– — —
– 1.0 — —
– 2.0 – 6.0 – 12
— — —
– — —
(VOL = 0.4 Vdc) Sink(VOL = 0.5 Vdc)(VOL = 1.5 Vdc)
IOL 5.01015
1.6 — —
— — —
1.6 — —
3.26.012
— — —
1 — —
Input Current Iin 15 — ± 0.1 — ±0.00001 ± 0.1 —
Three–State Leakage Current ITL 15 — ± 0.1 — ±0.00001 ± 0.1 —
Input Capacitance (Vin = 0) Cin — — — — 5.0 7.5 —
Quiescent Current(Per Package)
IDD 5.01015
— — —
5.01020
— — —
0.0050.0100.015
5.01020
— — —
Total Supply Current at an**External Load Capacitance of**130 pF (4.)
IT 5.010
IT = (2.0 µA/kHz) f + IDDIT = (4.0 µA/kHz) f + IDDIT = (6.0 µA/kHz) f + IDD
3. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential pe4. The formulas given are for the typical characteristics only at 25 C.
MC14598B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 428/449
SWITCHING CHARACTERISTICS (5.) (TA = 25 C, CL = 130 pF + 1 TTL Load)
VDDAll Types
Characteristic Symbol Vdc Min Typ (6.)
Output Rise and Fall Time
tTLH, tTHL = (0.5 ns/pF) CL + 35 nstTLH, tTHL = (0.2 ns/pF) CL + 25 ns
tTLH, tTHL = (0.16 ns/pF) CL + 20 ns
tTLH,
tTHL 5.010
15
— —
—
10050
40
Propagation Delay Time
Enable to Output
tPLH,
tPHL 5.0
10
15
—
—
—
160
125
100
Strobe to Output 5.0
10
15
—
—
—
200
100
80
Reset to Output 5.0
10
15
—
—
—
175
90
70
Pulse Width
Enable
tWH,
tWL 5.0
10
15
320
240
160
160
120
80
Strobe 5.0
10
15
200
100
80
100
50
40
Increment 5.0
10
15
200
100
80
100
50
40
Reset 5.0
10
15
300
160
100
150
80
50
Setup Time
Data
tsu
5.0
1015
100
5035
50
2520
Address 5.0
10
15
200
100
70
100
50
35
Hold Time
Data
th5.0
10
15
100
50
35
50
25
20
Address 5.010
15
10050
35
5025
20
Reset Removal Time trem 5.0
10
15
20
20
20
– 25
– 15
– 10
5 Th f l i f th t i l h t i ti l t 25 C
MC14598B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 429/449
MC14598B FUNCTION DIAGRAM
ENABLE 4
RESET 2
STROBE 6
DATA 3
TO OTHER
LATCHES
VDD
VSSEACH LATCH
ZERO
SELECT
ADDRESS
DECODERADDITIONAL 7 LATCHES
A0 7
A1 8
A2 10
TO OTHER
LATCHES
(M.S.B)
MC14598B TIMING DIAGRAM
*1.4 V with VDD = 5.0 V
NOTES:
1. High–impedance output state (another device controls bus).
2. Output Load as for MC14597B.
D7
RESET
A0, A1, A2
DATA
STROBE
ENABLE
90%10%50%
50%
tPHLtPLH
1
tTHL tPLH
90%10%
tTLH
tW50%
290%10%
tsu th
thtsu90%10% 50%
90%10%
20 ns tW20 ns
tW
*
MC14598B
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 430/449
TRUTH TABLE FOR MC1459
Address
Increment Enable Reset Counter
X 1 Count Up
X 1 No Change
X 1 0 Reset to Ze
X 0 1 No Change
If at
X 1 1 ADDRESS
X = Don’t care
LATCH TRUTH TABLE
Address Other
Strobe Reset Latch Latches
0 1 * *
1 1 Data *
X 0 0 0
*= No change in state of latch
X = Don’t care
TEST LOAD
ALL OUTPUTS
Dn
+5.0 V
RL = 2.5 k
11.7 k130 pF
Circuit diagrams external to or containing Motorola
products are included as a means of illustration only.Complete information sufficient for construction purposesmay not be fully illustrated. Although the information hereinhas been carefully checked and is believed to be reliable.Motorola assumes no responsibility for inaccuracies.Information herein does not convey to the purchaser anylicense under the patent rights of Motorola or others.
The information contained herein
with no warranty of any type, exMotorola reserves the right to makinformation and the product(s) to wapplies and to discontinue manufactuany time.
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 431/449
CH
CMOS R
RELIABILITY ll d i f il
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 432/449
RELIABILITY
Paramount in the mind of every semiconductor user is thequestion of device performance versus time. After theapplicability of a particular device has been established, itseffectiveness depends on the length of troublefree service it
can offer. The reliability of a device is exactly that — anexpression of how well it will serve the customer. Thefollowing discussion will attempt to present an overview of ON Semiconductor’s reliability efforts.
BASIC CONCEPTS
It is essential to begin with an explanation of the variousparameters of Reliability. These are probably summarizedbest in the Bathtub Curve (Figure 1). The reliability
performance of a device is characterized by three phases:infant mortality, useful life, and wearout. When a device isproduced, there is often a small distribution of failuremechanisms which will exhibit themselves under relativelymoderate stress levels and therefore appear early. Thisperiod of early failures, termed infant mortality is reducedsignificantly through proper manufacturing controls andscreening techniques. The most effective period is that inwhich only occasional random failure mechanisms appear.The useful life typically spans a long period of time with avery low failure rate. The final period is that in which thedevices literally wear out due to continuous phenomenawhich existed at the time of manufacture. Using strictlycontrolled design techniques and selectivity in applications,this period is shifted well beyond the lifetime required by theuser.
Figure 1.
TIME (HOURS)
F A I L U R E R A T E
INFANT MORTALITY
(SUCH AS EARLY
BURN–IN FAILURES)
WEAROUT
FAILURESUSEFUL LIFE
1,000,000100,00010,000100010010
usually expressed in percent failureOther forms include FIT (Failures in 10–4 = 10–9 failures per hour) and MFailure) or MTBF (Mean Time Bebeing equal to 1/ λ and having units o
Since reliability evaluations usuallyof an entire population of devices,Central Limit Theorem apply and λdistribution through the equation:
x2 (x, 2r +
2ntλ
100 – Cwhere x =
100
CL = Confidence Limit in pr = Number of rejectsn = Number of devicest = Duration of test
The confidence limit is the degree oin the calculation. The Central Limit Tvalues of any sample of units out of aproduce a normal distribution. A 50
termed the best estimate and is the meA 90% confidence limit is a very coresults in a higher λwhich represents tof the area of the distribution is to (Figure 2). The term (2r + 2) is called tand is an expression of the numbersuitable to x2 tables.
Figure 2.
50% CL
F R E Q U E N C Y
λ, FAILURE RATE
The number of rejects is a critdefinition of rejects often differs beWhile ON Semiconductor uses ddetermine failures, sometimes rejectthey are catastrophic Due to the incre
Y f i d t d i t ti h h th t d i ill b d (Fi 3) F D
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 433/449
Years of semiconductor device testing has shown thattemperature will accelerate failures and that this behaviorfits the form of the Arrhenius equation:
R (t) = R0(t)e – θ /kT
where R(t) = Reaction rate as a function of time andtemperature
R0 = A constantt = Timeθ = Activation energy in electron voltsk = Boltzman’s constantT = Temperature in degrees Kelvin
To provide time–temperature equivalents this equation isapplied to failure rate calculations in the form:
t = t0e θ /kTwhere t = time
t0 = A constant
The Arrhenius equation essentially states that reactionrate increases exponentially with temperature. Thisproduces a straight line when plotted in log–linear paperwith a slope expressed by Θ. Θ may be physicallyinterpreted as the energy threshold of a particular reaction orfailure mechanism. The activation energy exhibited bysemiconductors varies from about 0.3 eV. Although therelationships do not prohibit devices from having poorfailure rates and high activation energies, good performanceusually does not imply a high Θ. Studies by Bell TelephoneLaboratories have indicated that an overall Θ forsemiconductors is 1.0 eV. This value has been accepted bythe Rome Air Development Command fortime–temperature acceleration in powered burn–in. Datataken by ON Semiconductor on Integrated Circuits haveverified this number and it is therefore applied as ourstandard time–temperature regression for extrapolation of high temperature failure rates to temperatures at which the
devices will be used (Figure 3). For DeV is generally applied.
To accomplish this, the time in dtemperature (T1) of the test are plottedline is drawn at the temperature of in
with a 1.0 eV slope is drawn throughIts intersection with the vertical line
determines the number of equivalent dnumber may then be used with the x2
the failure rate at the temperature of iof 125 C at t1 of 10,000 hours, a t2results at a T2 of 50 C. If one rejectdevice hours of testing at 125 C, thtemperature will be 0.1%/1,000
confidence level. One reject at the edevice hours at 50 C will result in afailure rate, as illustrated in Figure 4.
Three parameters determine the faimanufacturer: the failure rate at theactivation energy employed, and the dtest temperature and the temperature ooften used in this manipulation is thewhich is simply the equivalent devi
temperature divided by the actual tesEvery device will eventually fail,
techniques in Semiconductor designwearout phase is extended far beyondDuring wearout, as in infant mortalchanging rapidly and therefore lparameter used to describe perform“Median Life” and is the point at whihave failed. There are currently only fe
mechanisms: electromigration of electrolytic corrosion in plastic devicePower devices.
1000 k
100 k
10 k
1.0 k
100
t2
1.2 1.6 2.0 2.4 2.8 3.2 3.6
P2
T I M E ( H O U R S )
100
10
1.0
0.01
λ2
1.2 1.6 2.0 2.4
R E R A T E ( % / 1 0 0 0 H O U
R S )
100 k
For increased flexibility in working with a broad range of where
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 434/449
For increased flexibility in working with a broad range of device hours, the time–temperature regression lines havebeen normalized to 500 C and the time scale omitted,permitting the user to define the scale based on his ownrequirements.
THERMAL MANAGEMENT
Circuit performance and long–term circuit reliability areaffected by die temperature. Normally, both are improved bykeeping the IC junction temperatures low.
Electrical power dissipated in any integrated circuit is asource of heat. This heat source increases the temperature of the die relative to some reference point, normally theambient temperature of 25 C in still air. The temperature
increase, then, depends on the amount of power dissipatedin the circuit and on the net thermal resistance between theheat source and the reference point.
The temperature at the junction is a function of thepackaging and mounting system’s ability to remove heatgenerated in the circuit — from the junction region to theambient environment. The basic formula for convertingpower dissipation to estimated junction temperature is:
TJ = TA + PD(θJC + θCA) (1)
or TJ = TA + PD(θJA) (2)
whereTJ = maximum junction tempTA = maximum ambient tempePD = calculated maximum pow
including effects of exter
Power Dissipation in secθJC = average thermal resistancθCA = average thermal resistancθJA = average thermal resistanc
ambient
This ON Semiconductor recommenapproved by RADC or DESC for calmaximum operating junction MIL–M–38510 (JAN) devices.
Only two terms on the right side ovaried by the user — the ambient device case–to–ambient thermal resisextent the device power dissipation cbut under recommended use the VCdictate a fixed power dissipation.) Bothe package mounting technique afresistance term. θJC is essentially inand external mounting method, but imaterial, die bonding method, and di
Thermal Resistance in Still Air
Package Description
No. Bod Bod Bod Die Die Area Fla Area
Leads Style Material W x L Bonds
(Sq. Mils)
(Sq. Mils) A
14
16
DIL
DIL
Epoxy
Epoxy
1/4″ x 3/4″
1/4″ x 3/4″
Epoxy
Epoxy
4096
4096
6,400
12,100
NOTES:
1. All plastic packages use copper lead frames.
2. Body style DIL is “Dual–In–Line.”
3. Standard Mounting Method: Dual–In–Line Socket or P/C board with no contact between bottom of package a
Figure 5. Thermal Resistance Values for Standard I/C Packages
For applications where the case is held at essentially afixed temperature by mounting on a large ortemperature–controlled heat sink, the estimated junction
temperature is calculated by:TJ = TC + PD(θJC) (3)
where TC = maximum case temperature and the otherparameters are as previously defined.
The maximum and average θJC resistance values fort d d IC k i i Fi 5
These figures show the proportio junction temperature of each dual in–passes over each device. For higher
change in junction temperature fromdown the airstream will be lower due
Power Dissipation
(mW)
Junction Te
( C
200
OPTIMIZING THE LONG TERM RELIABILITY OF Table 1 is graphically illustrated in
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 435/449
OPTIMIZING THE LONG TERM RELIABILITY OFPLASTIC PACKAGES
Todays plastic integrated circuit packages are as reliableas ceramic packages under most environmental conditions.However when the ultimate in system reliability is required,
thermal management must be considered as a prime systemdesign goal.
Modern plastic package assembly technology utilizesgold wire bonded to aluminum bonding pads throughout theelectronics industry. When exposed to high temperatures forprotracted periods of time an intermetallic compound canform in the bond area resulting in high impedance contactsand degradation of device performance. Since the formationof intermetallic compounds is directly related to device
junction temperature, it is incumbent on the designer todetermine that the device junction temperatures areconsistent with system reliability goals.
Predicting Bond Failure Time:
Based on the results of almost ten (10) years of +125 Coperating life testing, a special arrhenius equation has beendeveloped to show the relationship between junctiontemperature and reliability.
11554.267Eq. (1) T = (6.376 x 109)e273.15 + TJ
Where: T = Time in hours to 0.1% bond failureT = (1 failure per 1,000 bonds).
TJ = Device junction temperature, C.And:Eq. (2) TJ = TA + PDθJA = TA + ∆TJ
Where: TJ = Device junction temperature, C.
TA = Ambient temperature, C.PD = Device power dissipation in watts.θJA = Device thermal resistance, junction to air,
C/Watt.∆TJ = Increase in junction temperature due to
on–chip power dissipation.
Table 1 shows the relationship between junctiontemperature, and continuous operating time to 0.1%. bondfailure, (1 failure per 1,000 bonds).
Table 1. Device Junction Temperature versus Time
to 0.1% Bond Failures
Junction
Temperature C Time, Hours Time, Years
80 1,032,200 117.8
Table 1 is graphically illustrated in that the reliability for plastic and cesame until elevated junction teintermetallic failures in plastic devicfailure rates of plastic devices are
intermetallic mechanism.
Figure 7. Failure Rate ve
Junction Tempera
101
TIME, YEARS
N O R M A L I Z E D F A I L U R E R A T E
1
FAILURE RATE OF PLASTIC = CERAM
UNTIL INTERMETALLIC FAILURES OC
T J =
1 2 0 C °
T J =
1 3 0 C °
T J =
1 1 0 C °
T J =
1 0 0 C °
T J =
9 0 C °
Procedure
After the desired system failure rat
for failure mechanisms other thandevice in the system should be eva junction temperature. Knowing thetemperature, refer to Table 1 or Equatcontinuous operating time required tdue to intermetallic formation. Areliability departs from the desired Figure 7.
Air flow is one method of therma
should be considered for system longeused methods include heat sinks for hirefrigerated air flow and lower densityθCA is entirely dependent on the responsibility of the designer to determbe achieved by various techniques
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 436/449
P D ,
M A
X I M U M P O W E R D I S S I P A T I O N P E R
P A C K A G E ( m W )
Figure 8. Junction Temperature for Worst Case
CMOS Logic Device
150°C
125°C
100°C
75°C
50°C
125°C65°C25°C
TA, AMBIENT TEMPERATURE
137°C
134°C139°C
121°C
99°C
81°C
TJ PDIP
– 7 mW/ °C
PD
PDIP & SOIC
T J ,
J U N C T I O N T E M P E R A T U R
E ( C ) °
500
400
300
200
100
TJ SOIC
Figure 9. Junction Temperatu
CMOS Logic Devi
150°C
125°C
100°C
75°C
50°C 65°C25°C
TA, AMBIENT TEMPERAT
T J ,
J U N C T I O N T E M P E R A T U R
E ( C ) °
TJ SOIC
129°C
89°C
58°C
TJ PDIP
98°C
This graph illustrates junction temperature for the worst case CMOS
Logic device (MC14007UB) — smallest die area operating at
maximum power dissipation limit in still air. The solid line indicates
the junction temperature, TJ, in a Dual–In–Line (PDIP) package and
in a Small Outline IC (SOIC) package versus ambient temperature,TA. The dotted line indicates maximum allowable power dissipation
derated over the ambient temperature range, 25 C to 125 C.
This graph illustrates junction temperature
(MC14053B) — average die area opera
dissipation limit in still air. The solid lin
temperature, TJ, in a Dual–In–Line (PDIP
Outline IC (SOIC) package versus ambiedotted line indicates maximum allowable p
over the ambient temperature range, 25 C
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 437/449
CH
Equivalent G
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 438/449
The following is a list of equivalent gate counts for some of ON Semiconductor’s CMOS devices. Ithe number of equivalent gates is equal to the total number of transistors on chip divided by four. This l
devices with equivalent gate counts known at the time of this printing.EQUIVALENT EQUIV
DEVICE GATE COUNT DEVICE GATE
MC14001B 8 MC14081B 1
MC14001UB 4 MC14082B 8
MC14007UB 1.5 MC14093B 1
MC14008B 40 MC14094B 7
MC14011B 8 MC14099B 7
MC14011UB 4 MC14174B 43
MC14012B 7 MC14175B 39MC14013B 16 MC14490 13
MC14014B 74 MC14503B 1
MC14015B 53 MC14504B 37
MC14016B 8 MC14511B 5
MC14017B 62.5 MC14512B 17
MC14018B 38.25 MC14514B 5
MC14020B 84 MC14515B 6
MC14021B 74 MC14516B 6
MC14023B 9 MC14517B 1
MC14024B 59 MC14518B 43MC14025B 9 MC14520B 43
MC14028B 26 MC14526B 8
MC14029B 65.5 MC14528B 2
MC14040B 73 MC14532B 38
MC14042B 17.5 MC14536B 1
MC14046B 35 MC14538B 3
MC14049UB 3 MC14541B 9
MC14049B 9 MC14543B 5
MC14050B 6 MC14549B 12
MC14051B 48.5 MC14551B 3MC14052B 38.5 MC14553B 14
MC14053B 38 MC14555B 2
MC14060B 73.5 MC14556B 2
MC14066B 13 MC14557B 23
MC14067B 65 MC14559B 12
MC14069UB 3 MC14562B 2
MC14071B 10 MC14569B 15
MC14073B 10.5 MC14572UB 4
MC14076B 32.5 MC14584B 1
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 439/449
CH
Packaging Information Including Surfac
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 440/449
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 441/449
The standard package availability for each device is indicated on the front page of the individual dafor the packages are given in this chapter. Surface mount packages may be special ordered by specifying “D” (narrow SOIC), “DW” (wide SOIC), or “DT” (TSSOP). For example, to order a quad NOR gate,
1 7
14 8
B
ADIM MIN MAX
INCHES
A 0.715 0.770
B 0.240 0.260
C 0.145 0.185
D 0.015 0.021
F 0.040 0.070
G 0.100 BSC
H 0.052 0.095J 0.008 0.015
K 0.115 0.135
L
M ––– 10
N 0.015 0.039
NOTES:1. DIMENSIONING AND TO
Y14.5M, 1982.2. CONTROLLING DIMENS3. DIMENSION L TO CENTE
FORMED PARALLEL.4. DIMENSION B DOES NO5. ROUNDED CORNERS O
F
H G DK
C
SEATINGPLANE
N
–T–
14 PL
M0.13 (0.005)
L
M
J0.290 0.310
PDIP–14P SUFFIX
PLASTIC PACKAGECASE 646–06
ISSUE M
NOTES:1. DIMENSIONING A
Y14.5M, 1982.2. CONTROLLING D3. DIMENSIONS A A
MOLD PROTRUSI4. MAXIMUM MOLD
PER SIDE.5. DIMENSION D DO
PROTRUSION. ALPROTRUSION SHIN EXCESS OF THMAXIMUM MATER
–A–
–B–
G
P 7 PL
14 8
71M0.25 (0.010) B M
FR X 45C
DIM MIN
MILLIMET
A 8.55
B 3.80
C 1.35
SOIC–14D SUFFIX
PLASTIC PACKAGECASE 751A–03
ISSUE F
(continued)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 442/449
DIM MIN
MILLIMET
A 4.90
B 4.30
C –––
D 0.05
F 0.50G 0.65 BS
H 0.50
J 0.09
J1 0.09
K 0.19
K1 0.19
L 6.40 BS
M 0
NOTES:1. DIMENSIONIN
Y14.5M, 1982.2. CONTROLLING3. DIMENSION A
FLASH, PROTRUFLASH OR GATE (0.006) PER SIDE.
4. DIMENSION B FLASH OR PROTRPROTRUSION SH0.25 (0.010) PER S
5. DIMENSION K PROTRUSION. ALPROTRUSION SHEXCESS OF THE KMATERIAL CONDI
6. TERMINAL NUREFERENCE ONL
7. DIMENSION A AT DATUM PLANE
SU0.15 (0.006) T
2X L/2
SUM0.10 (0.004) V ST
L –U–
SEATING
PLANE
0.10 (0.004)
–T–
SECTION N–N
DETAIL E
J J1
K
K1
DETAIL E
F
M
–W–
0.25 (0.010)814
71
PIN 1IDENT.
HG
A
D
C
B
SU0.15 (0.006) T
–V–
14X REFK
N
N
TSSOP–14DT SUFFIX
PLASTIC PACKAGE
CASE 948G–01ISSUE O
HE
DIM MIN M
MILLIMETE
LE
Q1
NOTES:1. DIMENSIONING
Y14.5M, 1982.2. CONTROLLING D3. DIMENSIONS D A
MOLD FLASH OR PMEASURED AT THEOR PROTRUSIONS (0.006) PER SIDE.
4. TERMINAL NUMREFERENCE ONLY.
5. THE LEAD WIDTINCLUDE DAMBAR
DAMBAR PROTRUSTOTAL IN EXCESS ODIMENSION AT MAXDAMBAR CANNOT BRADIUS OR THE FOBETWEEN PROTRUTO BE 0.46 ( 0.018).
D
Z
E
1
14 8
7L
DETAIL P
M
SOEIAJ–14F SUFFIX
PLASTIC PACKAGECASE 965–01
ISSUE O
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 443/449
NOTES:1. DIMENSIONING AND TO
Y14.5M, 1982.2. CONTROLLING DIMENS3. DIMENSION L TO CENT
FORMED PARALLEL.4. DIMENSION B DOES NO5. ROUNDED CORNERS O
–A–
B
F C
S
HG
D
J
L
M
16 PL
SEATING
1 8
916
K
PLANE –T–
MAM0.25 (0.010) T
DIM MIN MAX
INCHES
A 0.740 0.770
B 0.250 0.270
C 0.145 0.175
D 0.015 0.021F 0.040 0.70
G 0.100 BSC
H 0.050 BSC
J 0.008 0.015
K 0.110 0.130
L 0.295 0.305
M 0 10
S 0.020 0.040
PDIP–16P SUFFIX
PLASTIC PACKAGE
CASE 648–08ISSUE R
NOTES:1. DIMENSIONING
Y14.5M, 1982.2. CONTROLLING 3. DIMENSIONS A
MOLD PROTRUS4. MAXIMUM MOLD
PER SIDE.
5. DIMENSION D DPROTRUSION. APROTRUSION SIN EXCESS OF TMAXIMUM MATE
1 8
16 9
SEATINGPLANE
F
JM
R X 45
G
8 PLP –B–
–A–
M0.25 (0.010) B S
–T–
D
K
C
16 PL
SBM0.25 (0.010) A ST
DIM MIN
MILLIME
A 9.80
B 3.80
C 1.35
D 0.35
F 0.40
G 1.27 B
J 0.19
K0.10M 0
P 5.80
R 0.25
SOIC–16D SUFFIX
PLASTIC PACKAGECASE 751B–05
ISSUE J
(continued)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 444/449
HE
A1
DIM MIN MAX
––– 2.05
MILLIMETERS
0.05 0.200.35 0.50
0.18 0.279.90 10.505.10 5.45
1.27 BSC7.40 8.200.50 0.851.10 1.500
0.70 0.90 ––– 0.78
A1
HE
Q1
LE
10
LE
Q1
NOTES:1. DIMENSIONING AN
Y14.5M, 1982.2. CONTROLLING DIM3. DIMENSIONS D AND
MOLD FLASH OR PROTMEASURED AT THE PAOR PROTRUSIONS SH(0.006) PER SIDE.
4. TERMINAL NUMBERREFERENCE ONLY.
5. THE LEAD WIDTH DINCLUDE DAMBAR PRODAMBAR PROTRUSIONTOTAL IN EXCESS OF DIMENSION AT MAXIMDAMBAR CANNOT BE RADIUS OR THE FOOTBETWEEN PROTRUSIOTO BE 0.46 ( 0.018).
M
L
DETAIL P
VIEW P
cA
b
e
M0.13 (0.005) 0.10 (0.004)
1
16 9
8
DZ
E
A
b
c
D
E
e
L
M
Z
SOEIAJ–16F SUFFIX
PLASTIC PACKAGECASE 966–01
ISSUE O
DIM MIN M
MILLIMET
A 4.90
B 4.30
C –––
D 0.05
F 0.50
G 0.65 BS
H 0.18
J 0.09
J1 0 09
NOTES:1. DIMENSIONING
Y14.5M, 1982.2. CONTROLLING3. DIMENSION A
FLASH. PROTRUSFLASH OR GATE B
(0.006) PER SIDE.4. DIMENSION B FLASH OR PROTRPROTRUSION SHA0.25 (0.010) PER S
5. DIMENSION K PROTRUSION. ALPROTRUSION SHAEXCESS OF THE KMATERIAL CONDI
6. TERMINAL NUMREFERENCE ONL
7. DIMENSION A AT DATUM PLANE
SECTION N–N
IDENT.
PIN 1
1 8
16 9
J
J1
B
A
K
K1
M
L
2X L/2
–U–
SU0.15 (0.006) T
SU0.15 (0.006) T
SUM0.10 (0.004) V ST
–V–
0.25 (0.010)
16X REFK
N
N
TSSOP–16DT SUFFIX
PLASTIC PACKAGECASE 948F–01
ISSUE O
(continued)
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 445/449
D
14X
B16X
SEATINGPLANE
SAM0.25 B ST
16 9
81
h X 4 5
M
B
M
0 . 2
5
H
8 X E
B
A
e
T A 1
A
L
C
NOTES:1. DIMENSIONS AR2. INTERPRET DIME
PER ASME Y14.53. DIMENSIONS D A
PROTRUSION.4. MAXIMUM MOLD5. DIMENSION B DO
PROTRUSION. ALPROTRUSION SHOF THE B DIMENSCONDITION.
DIM MIN
MILLIMET
A 2.35
A1 0.10
B 0.35
C 0.23
D 10.15
E 7.40
e 1.27 BS
H 10.05
h 0.25
L 0.50
0
SOIC–16DW SUFFIX
PLASTIC PACKAGE
CASE 751G–03ISSUE B
NOTES:1. POSITIONAL TOLERANCE
SHALL BE WITHIN 0.25 (0.MATERIAL CONDITION, INSEATING PLANE AND EAC
2. DIMENSION L TO CENTERFORMED PARALLEL.
3. DIMENSION B DOES NOTFLASH.
1
SEATING
10
9
18
M
A
B
K
C
N
F DJ
LDIM MIN MAX
MILLIMETERS
A 22.22 23.24
B 6.10 6.60
C 3.56 4.57
D 0.36 0.56
F 1.27 1.78
G 2.54 BSC
H 1.02 1.52
J 0 20 0 30
PDIP–18P SUFFIX
PLASTIC PACKAGECASE 707–02ISSUE C
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 446/449
NOTES:1. POSITIONAL TOLERA
SHALL BE WITHIN 0.25MATERIAL CONDITIONSEATING PLANE AND
2. DIMENSION L TO CENFORMED PARALLEL.
3. DIMENSION B DOES NFLASH.
DIM MIN MAX
MILLIMETERS
A 31.37 32.13
B 13.72 14.22
C3.94 5.08D 0.36 0.56
F 1.02 1.52
G 2.54 BSC
H 1.65 2.03
J 0.20 0.38
K 2.92 3.43
L 15.24 BSC
M 0 15
N 0.51 1.02
1 12
1324
B
H
A
F
DG
K
SEATINGPLANE
N
C
M J
L
PDIP–24P SUFFIX
PLASTIC PACKAGE
CASE 709–02ISSUE C
NOTES:1. DIMENSIONING AND TOL
Y14.5M, 1982.
2. CONTROLLING DIMENSI3. DIMENSIONS A AND B DOMOLD PROTRUSION.
4. MAXIMUM MOLD PROTRPER SIDE.
5. DIMENSION D DOES NOTPROTRUSION. ALLOWABPROTRUSION SHALL BEEXCESS OF D DIMENSIOMATERIAL CONDITION.
–A–
–B– P12X
D24X
12
1324
1
M0.010 (0.25) B M
SAM0.010 (0.25) B ST
–T–
G22X
SEATINGPLANE K
C
R X 45
M
F
J
DIM MIN MAX
MILLIMETERS
A 15.25 15.54
B 7.40 7.60
C 2.35 2.65
D 0.35 0.49F 0.41 0.90
G 1.27 BSC
J 0.23 0.32
K 0.13 0.29
M 0 8
P 10.05 10.55
R 0.25 0.75
SOIC–24DW SUFFIXPLASTIC PACKAGE
CASE 751E–04ISSUE E
ON SEMICONDUCTOR MAJOR WORLDWIDE SALES OF
UNITED STATES CANADA INTERNATIONAL
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 447/449
UNITED STATES
ALABAMAHuntsville (256)464–6800. . . . . . . . . . . . . . . . . .
CALIFORNIAIrvine (949)753–7360. . . . . . . . . . . . . . . . . . . . . .
San Jose (408)749–0510. . . . . . . . . . . . . . . . . .COLORADO
Denver (303)337–3434. . . . . . . . . . . . . . . . . . . .
FLORIDASt. Petersberg (813)524–4177. . . . . . . . . . . . . .
GEORGIAAtlanta (770)338–3810. . . . . . . . . . . . . . . . . . . .
ILLINOISChicago (847)413–2500. . . . . . . . . . . . . . . . . . .
MASSACHUSETTSBoston (781)932–9700. . . . . . . . . . . . . . . . . . . .
MICHIGANDetroit (248)347–6800. . . . . . . . . . . . . . . . . . . . .
MINNESOTAPlymouth (612)249–2360. . . . . . . . . . . . . . . . . .
NORTH CAROLINARaleigh (919)870–4355. . . . . . . . . . . . . . . . . . . .
PENNSYLVANIAPhiladelphia/Horsham (215)957–4100. . . . . . .
TEXASDallas (972)516–5100. . . . . . . . . . . . . . . . . . . . .
CANADA
ONTARIOOttawa (613)226–3491. . . . . . . . . . . . . . . . . . . .
QUEBECMontreal (514)333–3300. . . . . . . . . . . . . . . . . . .
INTERNATIONAL
BRAZILSao Paulo 55(011)3030–5244. . . . . . . . . . . . .
CHINABeijing 86–10–65642288. . . . . . . . . . . . . . . . . . .
Guangzhou 86–20–87537888. . . . . . . . . . . . . .
Shanghai 86–21–63747668. . . . . . . . . . . . . . . .
FRANCEParis 33134 635900. . . . . . . . . . . . . . . . . . . . . .
GERMANYMunich 49 89 92103–0. . . . . . . . . . . . . . . . . . . .
HONG KONGHong Kong 852–2–610–6888. . . . . . . . . . . . . . .
INDIABangalore 91–80–5598615. . . . . . . . . . . . . . . . .
ISRAELTel Aviv 972–9–9522333. . . . . . . . . . . . . . . . . . .
ITALYMilan 39(02)82201. . . . . . . . . . . . . . . . . . . . . . . .
JAPANTokyo 81–3–5487–8345. . . . . . . . . . . . . . . . . . .
INTERNATIONAL
KOREASeoul . . . . . . . . . . .
MALAYSIAPenang . . . . . . . . .
MEXICOGuadalajara . . . . .
PHILIPPINESManila . . . . . . . . . .
PUERTO RICOSan Juan . . . . . . .
SINGAPORESingapore . . . . . . .
SPAINMadrid . . . . . . . . . .
or . . . . . . . . . . . . . .
SWEDENStockholm . . . . . .
TAIWANTaipei . . . . . . . . . .
THAILANDBangkok . . . . . . . .
UNITED KINGDOAylesbury . . . . . . .
ON SEMICONDUCTOR STANDARD DOCUMENT TYPE DEFINITIONS
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 448/449
REFERENCE MANUAL
A Reference Manual is a publication that contains a comprehensive system or device–specific description of th(operation) of a particular part/system; used overwhelmingly to describe the functionality of a microprocessor, m
other sub–micron sized device. Procedural information in a Reference Manual is limited to less than 40 percent
USER’S GUIDE
A User’s Guide contains procedural, task–oriented instructions for using or running a device or product. A Ua Reference Manual in the following respects:* Majority of information (> 60%) is procedural, not functional, in nature* Volume of information is typically less than for Reference Manuals* Usually written more in active voice, using second–person singular (you) than is found in Reference Manuals* May contain photographs and detailed line drawings rather than simple illustrations that are often found in Re
POCKET GUIDEA Pocket Guide is a pocket–sized document that contains technical reference information. Types of informa
pocket guides include block diagrams, pinouts, alphabetized instruction set, alphabetized registers, alphabetizedtheir products, etc.
ADDENDUM
A documentation Addendum is a supplemental publication that contains missing information or replaces prelimprimary publication it supports. Individual addendum items are published cumulatively. Addendums end with primary document.
APPLICATION NOTE
An Application Note is a document that contains real–world application information about how a specdevice/product is used with other ON Semiconductor or vendor parts/software to address a particular technical issmust already exist and be available.
A document called “Application–Specific Information” is not the same as an Application Note.
SELECTOR GUIDE
A Selector Guide is a tri–fold (or larger) document published on a regular basis (usually quarterly) by many,contains key line–item, device–specific information for particular product families. Some Selector Guides are pand contain previously published information.
PRODUCT PREVIEW
A Product Preview is a summary document for a product/device under consideration or in the early stages of dePreview exists only until an “Advance Information” document is published that replaces it. The Product Previewsection or chapter in a corresponding reference manual. The Product Preview displays the following disclaimer page: “ON Semiconductor reserves the right to change or discontinue this product without notice.”
ADVANCE INFORMATION
The Advance Information document is for a device that is NOT fully MC–qualified. The Advance Informatiowith the Technical Data document once the device/part becomes fully MC–qualified. The Advance Informationfollowing disclaimer at the bottom of the first page: “This document contains information on a new product. Specifherein are subject to change without notice.”
TECHNICAL DATA
The Technical Data document is for a product/device that is in full production (i.e., fully released). It replaces tdocument and represents a part that is M X XC or MC qualified The Technical Data document is virtually th
7/30/2019 C mos- IC''s -Data -Book
http://slidepdf.com/reader/full/c-mos-ics-data-book 449/449