Data Sheet V1.0 1 2003-01-10

Smart Lowside Power Switch

HITFET BSP 75N

Data Sheet V1.0

Features

• Logic Level Input• Input protection (ESD)• Thermal shutdown with auto restart• Overload protection• Short circuit protection• Overvoltage protection• Current limitation

Application

• All kinds of resistive, inductive and capacitive loads in switching applications• µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt

Powernet• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart Power Technology. Fully protected by embeddedprotection functions.

Type Ordering Code Package

HITFET BSP 75N Q67060-S7215 P-SOT223-4

Product Summary

Parameter Symbol Value Unit

Continuous drain source voltage VDS 60 V

On-state resistance RDS(ON) 550 mΩCurrent limitation ID(lim) 1 A

Nominal load current ID(Nom) 0.7 A

Clamping energy EAS 550 mJ

HITFET BSP 75N

Data Sheet V1.0 2 2003-01-10

Figure 1 Block Diagram

Figure 2 Pin Configuration

Pin Definitions and Functions

Pin No. Symbol Function

1 IN Input; activates output and supplies internal logic

2 DRAIN Output to the load

3 + TAB SOURCE Ground; pin3 and TAB are internally connected

HITFETLogic OUTPUT

StageOver voltage

Protection

IN

DRAIN

Vbb

dV/dtlimitation

SOURCEESD

Short circuitProtection

CurrentLimitation

OvertemperatureProtection

M

1

2

3

TAB

IN

DRAIN

SOURCE

SOU

RC

E

Data Sheet V1.0 3 2003-01-10

HITFET BSP 75N

Circuit Description

The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with alogic level input, an open drain DMOS output stage and integrated protection functions.It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotiveand industrial applications.

Protection Functions

• Over voltage protection: An internal clamp limits the output voltage at VDS(AZ) (min.60V) when inductive loads are switched off.

• Current limitation: By means of an internal current measurement the drain current islimited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operatesin the linear region, so power dissipation may exceed the capability of the heatsink.This operation leads to an increasing junction temperature until the over temperaturethreshold is reached.

• Over temperature and short circuit protection: This protection is based on sensingthe chip temperature. The location of the sensor ensures a fast and accurate junctiontemperature detection. Over temperature shutdown occurs at minimum 150 °C. Ahysteresis of typ. 10 K enables an automatic restart by cooling.

The device is ESD protected according Human Body Model (4 kV) and load dumpprotected (see Maximum Ratings).

HITFET BSP 75N

Data Sheet V1.0 4 2003-01-10

Absolute Maximum RatingsTj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit Remarks

Continuous drain source voltage 1) VDS 60 V –

Drain source voltage forshort circuit protection

VDS 36 V –

Continuous input voltage VIN -0.2 … +10 V –

Peak input voltage VIN -0.2 … +20 V –

Continuous Input Current-0.2V ≤ VIN ≤ 10VVIN<-0.2V or VIN>10V

IINno limit| IIN |≤ 2mA

mA –

Operating temperature rangeStorage temperature range

TjTstg

-40 … +150-55 … +150

°C°C

–

Power dissipation (DC) Ptot 1.8 W –

Unclamped single pulse inductive energy EAS 550 mJ ID(ISO) = 0.7 A;Vbb =32V

Load dump protection 2)

IN = low or high (8 V); RL = 50 ΩIN = high (8 V); RL = 22 Ω

VLoadDump8047

V VLoadDump =VP + VS;VP = 13.5 VRI

3) = 2 Ω;td = 400 ms;

Electrostatic discharge voltage (Human Body Model)according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993

VESD 4000 V –

DIN humidity category, DIN 40 040 – E – –

IEC climatic category, DIN IEC 68-1 – 40/150/56 – –

Thermal Resistance

Junction soldering point RthJS ≤ 10 K/W –

Junction - ambient4) RthJA ≤ 70 K/W –1) See also Figure 7 and Figure 10.

2) VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page 7.

3) RI = internal resistance of the load dump test pulse generator LD200.

4) Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection.

Data Sheet V1.0 5 2003-01-10

HITFET BSP 75N

Electrical CharacteristicsTj = 25 °C, unless otherwise specified

Parameter Sym-bol

Limit Values Unit Test Conditions

min. typ. max.

Static Characteristics

Drain source clamp voltage VDS(AZ) 60 – 75 V ID = 10 mA,Tj = -40 … +150 °C

Off state drain current IDSS – – 5 µA VIN = 0 V,VDS = 32 V,Tj = -40 … +150 °C

Input threshold voltage VIN(th) 1 1.8 2.5 V ID = 10 mA

Input current:normal operation, ID < ID(lim):current limitation mode, ID = ID(lim):After thermal shutdown, ID = 0 A:

IIN(1)IIN(2)IIN(3)

––1000

1002501500

2004002000

µA VIN = 5 V

On-state resistanceTj = 25 °C

Tj = 150 °C

RDS(on)––

490850

6751350

mΩ ID = 0.7 A,VIN = 5 V

On-state resistanceTj = 25 °C

Tj = 150 °C

RDS(on)––

430750

5501000

mΩ ID = 0.7 A,VIN = 10 V

Nominal load current ID(Nom) 0.7 – – A VBB = 12 V,VDS = 0.5 V,TS = 85 °C,Tj < 150 °C

Current limit ID(lim) 1 1.5 1.9 A VIN = 10 V,VDS = 12 V

Dynamic Characteristics 1)

Turn-on time VIN to 90% ID: ton – 10 20 µs RL = 22 Ω,VIN = 0 to 10 V,VBB = 12 V

Turn-off time VIN to 10% ID: toff – 10 20 µs RL = 22 Ω,VIN = 10 to 0 V,VBB = 12 V

HITFET BSP 75N

Data Sheet V1.0 6 2003-01-10

Slew rate on 70 to 50% VBB: -dVDS/dton

– 5 10 V/µs

RL = 22 Ω,VIN = 0 to 10 V,VBB = 12 V

Slew rate off 50 to 70% VBB: dVDS/dtoff

– 10 15 V/µs

RL = 22 Ω,VIN = 10 to 0 V,VBB = 12 V

Protection Functions2)

Thermal overload trip temperature

Tjt 150 165 180 °C –

Thermal hysteresis ∆Tjt – 10 – Κ –

Unclamped single pulse inductive energy Tj = 25 °C

Tj = 150 °C

EAS550200

––

––

mJ ID(ISO) = 0.7 A,VBB = 32 V

Inverse Diode

Continuous source drain voltage VSD – 1 – V VIN = 0 V,-ID = 2 × 0.7 A

1) See also Figure 9.

2) Integrated protection functions are designed to prevent IC destruction under fault conditions described in thedatasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are notdesigned for continuous, repetitive operation.

Electrical Characteristics (cont’d)Tj = 25 °C, unless otherwise specified

Parameter Sym-bol

Limit Values Unit Test Conditions

min. typ. max.

Data Sheet V1.0 7 2003-01-10

HITFET BSP 75N

EMC-CharacteristicsThe following EMC-Characteristics outline the behavior of typical devices. They are notpart of any production test.

Table 1 Test Conditions

Parameter Symbol Value Unit Remark

Temperature TA 23 ±5 °C –

Supply Voltage VS 13.5 V –

Load RL 27 Ω ohmic

Operation mode PWMDC

––

––

fINx=100Hz, D=0.5ON / OFF

DUT specific VIN(’HIGH’)=5V

Fast electrical transients

acc. to ISO 7637

Test1) Pulse

1) The test pulses are applied at VS

Max. Test Level

Test Result Pulse Cycle Time and Generator

ImpedanceON OFF

1 -200V C C 500ms ; 10Ω2 +200V C C 500ms ; 10Ω3a -200V C C 100ms ; 50Ω3b +200V C C 100ms ; 50Ω4 -7V C C 0.01Ω5 175V E(65V) E(75V) 400ms ; 2Ω

Definition of functional status

Class Content

C All functions of the device are performed as designed after exposure to disturbance.

E One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit.

HITFET BSP 75N

Data Sheet V1.0 8 2003-01-10

Figure 3 Test circuit for ISO pulse

Conducted Emissions

Acc. IEC 61967-4 (1Ω/150Ω method)

Typ. Vbb Emissions at PWM-mode with 150Ω-matching network

Figure 4 Test circuit for conducted emission 1)

Conducted Susceptibility

Acc. 47A/658/CD IEC 62132-4 (DirectPower Injection)

Direct Power Injection: Forward PowerCW

Failure Criteria: Amplitude or frequencyvariation max. 10% at OUT

Typ. Vbb Susceptibility at DC-ON/OFF and at PWM

Test circuit for conducted susceptibility2)

BSP75N

SOURCE

DRAININ

VBB

RL

PULSE

-20

-10

0

10

20

30

40

50

60

70

80

90

100

0,1 1 10 100 1000

f / MHz

dBµV

Noise levelBSP75N150ohm Class6150ohm Class1

150Ω / 8-H

150Ω / 13-N

150ΩΩΩΩ-Network

BSP75N

SOURCE

DRAININ

VBB

RL

1) For defined de coupling and high reproducibility adefined choke (5µH at 1MHz) is inserted in theVbb-Line.

2) Broadband Artificial Network (short: BAN) consistsof the same choke (5µH at 1MHz) and the same150 Ohm-matching network as for emissionmeasurement for defined de coupling and highreproducibility.

0

5

10

15

20

25

30

35

40

1 10 100 1000

f / MHz

dBm

LimitOUT, ONOUT, OFFOUT, PWM

HF

BSP75N

SOURCE

DRAININ

VBB

RL

B A N

HITFET BSP 75N

Data Sheet V1.0 9 2003-01-10

Block diagram

Figure 5 Terms

Figure 6 Input Circuit (ESD protection)

ESD zener diodes are not designed for DCcurrent.

Figure 7 Inductive and Over voltage Output Clamp

Figure 8 Application Circuit

IIN

VIN

Vbb

ID

HITFET

SOURCE

DRAININ

VDS

IN

SOURCE

Source

Drain

VDS

ID

VAZ

PowerDMOS

LOAD

BSP75N

SOURCE

DIN

VBB

uC Vcc

GND

Px.1

HITFET BSP 75N

Data Sheet V1.0 10 2003-01-10

Timing diagrams

Figure 9 Switching a Resistive Load

Figure 10 Switching an Inducitve Load

Figure 11 Short circuit

t

VDS

t

ID

ton toff

0.9*ID0.1*ID

VIN

t

t

VDS

t

ID

VBB

VDS(AZ)

VIN

t

t

ϑϑϑϑj

ID

t

thermal hysteresis

VIN

tID(lim)

HITFET BSP 75N

Data Sheet V1.0 11 2003-01-10

1 Max. allowable power dissipationPtot = f(TAmb)

3 On-state resistance RON = f(Tj);ID = 0.7 A; VIN = 5 V

2 On-state resistance RON = f(Tj);ID = 0.7 A; VIN = 10 V

4 Typ. input threshold voltageVIN(th) = f(Tj); ID = 10 mA; VDS = 12 V

0

0,4

0,8

1,2

1,6

2

0 25 50 75 100 125 150

P tot

W

T Am b

°C

m ax.

0

200

400

600

800

1000

1200

1400

-50 -25 0 25 50 75 100 125 150

R O N

m Ω

T j

°C

m ax.

typ.

0

100

200

300

400

500

600

700

800

900

1000

-50 -25 0 25 50 75 100 125 150

R ON m Ω

T j

°C

m ax.

typ.

0

0,5

1

1,5

2

2,5

-50 -25 0 25 50 75 100 125 150

V IN (th)

V

T j

°C

typ.

HITFET BSP 75N

Data Sheet V1.0 12 2003-01-10

5 Typ. on-state resistance RON = f(VIN);ID = 0.7 A; Tj = 25 °C

7 Typ. short circuit currentID(SC) = f(VIN); VDS = 12 V, Tj = 25 °C

6 Typ. current limitation ID(lim) = f(Tj);VDS = 12 V, VIN = 10 V

8 Max. transient thermal impedanceZthJA = f(tp) @ 6cm²; Parameter: D = tp/T

0

500

1000

1500

2000

0 2 4 6 8 10V IN

V

typ.

R O N

m Ω

0

0,5

1

1,5

2

0 2 4 6 8 10

I D (SC )

A

V IN

V

typ.

0

0,5

1

1,5

2

-50 -25 0 25 50 75 100 125 150

I D (lim )

A

T j

°C

typ .

0 ,1

1

10

1 00

0 ,00001 0 ,001 0,1 10 1000 100000

00 .010 .020 .050 .10 .20 .5D =

Z th (JA)

K /W

t P

s

Data Sheet V1.0 13 2003-01-10

HITFET BSP 75N

Package Outlines

±0.1

±0.2

±0.10.7

4

321

6.5

3

acc. to+0.2

DIN 6784

1.6±0.1

15˚m

ax±0.040.28

7±0.

3

±0.2

3.5

0.5

0.1 max

min

BM0.25

B

A

2.3

4.6

AM0.25

P-SOT223-4(Small Outline Transistor)

GP

S05

560

Sorts of PackingPackage outlines for tubes, trays etc. are contained in our Data Book “Package Information”

Dimensions in mmSMD = Surface Mounted Device

HITFET BSP 75N

Data Sheet V1.0 14 2003-01-10

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 76,

D-81541 München

© Infineon Technologies AG 1999

All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not beconsidered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties ofnon-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices pleasecontact your nearest Infineon Tech-nologies Office in Germany or our InfineonTechnologies Representatives worldwide (see address list).WarningsDue to technical requirements components may contain dangerous substances. Forinformation on the types in question please contact your nearest Infineon TechnologiesOffice.Infineon Technologies Components may only be used in life-support devices or systemswith the express written approval of Infineon Technologies, if a failure of suchcomponents can reasonably be expected to cause the failure of that life-support deviceor system, or to affect the safety or effectiveness of that device or system. Life supportdevices or systems are in-tended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assumethat the health of the user or other persons may be endangered.