spice example

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spice examples

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Assignment 2

Submitted byGaurav Saini124070012

2.a). Program

DC analysis

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.include tsmc_spice_180nm.txt

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Mn 1 2 0 4 cmosn L=0.18u W=20u

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Vds 3 0 dc 50mVbs 4 0 dc 0Vgs 2 0 dc 1.8Vdummy 3 1 dc 0

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.dc Vgs 0 1.8 0.1*.control*run*plot i(Vdummy)*.endc.end

Threshold Voltage is around 0.4 Volt.

2.b). Program

DC analysis

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.include tsmc_spice_180nm.txt

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Mn 1 2 0 4 cmosn L=0.18u W=20u

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Vds 3 0 dc 1.8Vbs 4 0 dc 0Vgs 2 0 dc 1.8Vdummy 3 1 dc 0

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.dc Vgs 0 1.8 0.1*.control*run*plot i(Vdummy)*.endc.end

There is no change in the value of threshold voltage.

2.c.1). Program (comparison with 2.a)

DC analysis

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.include tsmc_spice_180nm.txt

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Mn 1 2 0 4 cmosn L=0.18u W=20u

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Vds 3 0 dc 50mVbs 4 0 dc -0.9Vgs 2 0 dc 1.8Vdummy 3 1 dc 0

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.dc Vgs 0 1.8 0.1*.control*run*plot i(Vdummy)*.endc.end

Because of negative Vbs (body to source voltage), threshold voltage of the transistor increases. Hence according to the drain current formula, drain current decreases.

2.c.2). Program (Comparison with 2.b)

DC analysis

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.include tsmc_spice_180nm.txt

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Mn 1 2 0 4 cmosn L=0.18u W=20u

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Vds 3 0 dc 1.8Vbs 4 0 dc -0.9Vgs 2 0 dc 1.8Vdummy 3 1 dc 0

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.dc Vgs 0 1.8 0.1*.control*run*plot i(Vdummy)*.endc.end

Same reason for decrease in current as was for 2.c.1.

2.d) Program

DC analysis

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.include tsmc_spice_180nm.txt

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Mn 1 2 0 4 cmosn L=0.18u W=20u

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Vds 3 0 dc 1.8Vbs 4 0 dc 0Vgs 2 0 dc 1.8Vdummy 3 1 dc 0

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.dc Vds 0 1.8 0.1*.control*run*plot i(Vdummy)*.endc.end

The positive slope when the device is in saturation is because of the finite resistance between the drain to source terminal. This is also called channel length modulation effect. Because of small channel length current in saturation region depends on the drain to source voltage.

3.a). Program

DC analysis

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.include tsmc_spice_180nm.txt

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Mn1 1 2 3 0 cmosn L=0.18u W=1.8uMn2 3 2 0 0 cmosn L=0.18u W=1.8u

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Vds 4 0 dc 1.8Vgs 2 0 dc 1.8Vdummy 4 1 dc 0

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.dc Vds 0 1.8 0.1*.control*run*plot i(Vdummy)*.endc.end

3.b). Program

DC analysis

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.include tsmc_spice_180nm.txt

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Mn 1 2 0 0 cmosn L=0.36u W=1.8u

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Vds 3 0 dc 1.8Vgs 2 0 dc 1.8Vdummy 3 1 dc 0

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.dc Vds 0 1.8 0.1*.control*run*plot i(Vdummy)*.endc.end

Channel length modulation effect is less when we use channel length of larger size. In 3.b, length of channel is twice as compared to the transistor channel length in 3.a. So, channel length modulation effect is more in 3.a. Because of this effect, current in saturation region depends on the drain to source voltage. Hence, Id v/s Vds curve will have some finite slope which is also clearly visible in the output waveform. In case of 3.b, Id v/s Vds slope in saturation region is less.

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