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NIR PHOTOMULTIPLIER TUBESAND THEIR APPLICATIONS
THERMOELECTRIC COOLED NIR PMT MODULEH10330 SERIES
NIR PMTR5509 SERIES
NIR PMTs (near-infrared photomultiplier tubes) are photodetectors that provide high-speed response and high sensitivity in the near infrared region.These are ideal for detecting high-speed phenomena occurring at low light levels such as in measurements of photoluminescence, fluorescence lifetime, Raman spectroscopy, cathode luminescence, and singlet-oxygen emissions.As major NIR PMT products, Hamamatsu offers the R5509 series photomultiplier tubes (spectral response range: 300 nm to 1400 nm or 300 nm to 1700 nm) and the H10330 series NIR PMT modules (spectral response range: 950 nm to 1200 nm, 950 nm to 1400 nm, or 950 nm to 1700 nm) that contain a thermoelectric cooler and high-voltage power supply. Either type can be used over a wide measurement range from analog detection mode to photon counting mode.This brochure introduces major applications that utilize the unique features of NIR PMTs.
Q. What can we do with near infrared light?1. Semiconductor quality control and material evaluation – Photoluminescence measurement2. Evaluation of quantum devices and photonic crystals – Photoluminescence measurement3. Evaluation of molecular structures – Raman spectroscopy4. Reactive oxygen study – Singlet-oxygen emission measurement5. Environment measurement – Light detection and ranging (LIDAR)
THERMOELECTRIC COOLED NIR PMT MODULEH10330 SERIES
NIR PMTR5509 SERIES
No Liquid Nitrogen, No Cooling Water in Necessary Wide Spectral Response from Visible to Near Infrared
Spectral Response Spectral Response
* C9940 series cooler is necessary for operation.
TPMOB0200EB TPMHB0426EF
NIR PHOTOMULTIPLIER TUBESAND THEIR APPLICATIONS
800 1200
WAVELENGTH (nm)
CA
TH
OD
E R
AD
IAN
T S
EN
SIT
IVIT
Y (
mA
/W)
QU
AN
TU
M E
FF
ICIE
NC
Y (
%)
1000 16001400900 13001100 17001500
102
101
100
10-1
10-2
10-3
1800
CATHODE RADIANTSENSITIVITY
QUANTUMEFFICIENCY
-75
-45
H10330-25
R5509-73
R5509-43
200 800 1200
WAVELENGTH (nm)
CA
TH
OD
E R
AD
IAN
T S
EN
SIT
IVIT
Y (
mA
/W)
QU
AN
TU
M E
FF
ICIE
NC
Y (
%)
400 600 1000 1600140010-2
10-1
100
101
102
1800
at -80 °C
CATHODE RADIANT SENSITIVITY
QUANTUM EFFICIENCY
SELECTION GUIDE / SPECIFICATIONS
OUTPUT WAVEFORM
Type No.Photocathode MaterialSpectral ResponseDetection Area for Collimated LightEffective Area of PMTCathode SensitivityGain
Time Response
Main Application
Quantum Efficiency
Anode Pulse Rise TimeAnode Pulse Fall TimeTransit Time Spread
H10330-25
950 nm to 1200 nm
YAG laser (1.06 µm) measure-ment, Si Photoluminescence,
Laser rader (LIDAR)
H10330-45
950 nm to 1400 nm 18 mm 1.6 mm2 % Typ.1 × 106
0.9 ns1.7 ns0.3 ns
Singlet-oxygen emmisionmeasurement,
Si Photoluminescence
H10330-75InP / InGaAs
950 nm to 1700nm
Optical communicationdevice evaluation,
Laser rader (LIDAR)
InP / InGaAsP
OVER VIEWThe H10330 series is a family of NIR PMT modules using a compact NIR PMT (near-infrared photomultiplier tube) devel-oped by our advanced photocathode technology. The NIR PMT is contained in a thermally insulated sealed-off housing evacuated to a high vacuum. The internal thermoelectric cool-er eliminates the need for liquid nitrogen and cooling water. Unlike the former type, no external vacuum pump is required. The size is also reduced to one-third of the cubic volume of the formar type. The light input window of these modules use a condenser lens to provide a virtually larger photosensitive area allowing easy opti-cal coupling for collimated light. Adapters for connection to an optical fiber and monochromator are also available as options.
FEATURESTPMOB0163EBCompact and lightweight due to vacuum sealed-
off thermal insulation technology High Sensitivity (Capable of Photon Counting)Fast Time Response
Rise Time: 900 ps, TTS: 300 psSimple Operation by Air Cooled TE Cooler
No Liquid Nitrogen, No Cooling Water is NecessaryOperable in 20 min after Switched ONLarge Detection Area
18 mm for Collimated LightHV Power Supply with Interlock FunctionOptional Adapters are Available
For Optical FiberFor Monochromator
TIME (2 ns/Div.)
OU
TP
UT
VO
LTA
GE
(20
mV
/Div
.)
SUPPLY VOLTAGERISE TIMEFALL TIMEPULSE WIDTHWAVELENGTHLOAD RESISTOR
: -800 V: 0.85 ns: 1.65 ns: 1.63 ns: 1300 nm: 50 Ω
THERMOELECTRIC COOLED
NIR PMT MODULEH10330-25, -45, -75
TEMPERATURE / DARK CURRENT vs. COOLING TIME (H10330-45)
DIMENSIONAL OUTLINE (Unit: mm)
SYSTEM CONFIGURATION (CONNECTION DIAGRAM)
NIR PMT Module
NIR PMT Module Controller
TPMOA0040EB
TPMOA0041EB
NIR PMT MODULE
INPUT
SIGNAL
CONTROLLER
1504
12015.5
100
70
60
163
2312
88
48
FAN EXHAUST VENT*
M30 P=0.5
INPUT WINDOWEFFECTIVEAREA 18
10 PIN CONNECTOR
AIR INTAKE VENTS*
BNC-RECEPTACLE
SHV-RECEPTACLE
* Do not block the air intake vents and fan ex-haust vent. Otherwise, heat builds up in the unit causing poor performance or failure.
OUTPUT
AC INPUT
CONTROLLER
ERROR
STANDBY READY
POWER
OUTPUT
OUTPUT ADJ.
VOLTAGE
[ V ]
NIR PMT MODULE CONTRPLLER
279.5 2026102
130
12
70 24815.5
SHV-RECEPTACLE
AC INPUT
10 PIN CONNECTORAIR INTAKE VENTS
FAN EXHAUST VENT
TPMOB0162EB
TPMOC0199EA
0 5 10-75
-60
-45
-30
-15
0
15
30
0
10
30
20
40
60
50
70
COOLING TIME (min)
IND
ICAT
ED
TE
MP
ER
ATU
RE
(°C
)
AN
OD
E D
AR
K C
UR
RE
NT
(nA
)
15 20 25
DARK CURRENT
INDICATED TEMPERATURE
ERROR
STANDBY READY
POWER
OUTPUT
OUTPUT ADJ.
VOLTAGE
[ V ]
NIR PMT MODULE CONTROLLER
NIR PMT MODULE
NIR-PMT MODULE
NIR-PMT MODULECONTROLLER
CONTROL CABLE(2.5 m)
HIGH VOLTAGE CABLE (2.5 m)
RESISTOR BOX WITHBNC CONNECTORS
(100 kΩ)
SPECIFICATIONS
OUTPUT WAVEFORM (R5509-43)
TypeSpectral ResponsePhotocathode
Recommended Operating TemperatureCathode SensitivityGain
Time Response
MaterialMinimum Effective Area
Quantum Efficiency
Anode Pulse Rise TimeAnode Pulse Fall TimeTransit Time Spread
R5509-43300 nm to 1400 nm
InP / InGaAsP3 mm × 8 mm
-80 °C2 % Typ. (at 1300 nm: R5509-43, at 1500 nm: R5509-73)
1 × 106
3 ns23 ns1.5 ns
R5509-73300 nm to 1700 nm
InP / InGaAs
OVER VIEWHamamatsu near infrared photomultiplier tubes (NIR PMT) R5509-43 and -73 have photocathodes with exten-ded spectral response ranges to 1.4 µm or 1.7 µm where beyond 1.1 µm have been the limit of conventional photo-cathodes.The R5509-43 is recommended for detection up to 1.35 µm, while the R5509-73 is up to 1.7 µm.For operation, exclusive cooler C9940 series is neces-sary.
FEATURESTPMHB0406EBHigh sensitivity enables accurate PL (Photolumines-
cence) measurement with a low excitation power that could not be obtained with a strong excitation. High gain and low noise improve the detection limit.
Flat response from visible to near IR minimizes spectral sensitivity correction.The spectral response covers a wide range from 0.3 µm to 1.4 µm or 1.7 µm.
Photoluminescence from a room temperature sam-ple can be measured.*High sensitivity enables weak light emission meas-urement.
Time resolved measurement in near IR is realized.Fast time response (Rise time): 3 ns.
* Detection limit depends on the material and measurement condition.
TIME [5 ns/Div]
OU
TP
UT
VO
LTA
GE
[1 m
V/D
iv]
SUPPLY VOLTAGERISE TIMEFALL TIMEPULSE WIDTHWAVELENGTHAMBIENT TEMPERATURE
: -1500 V: 2.60 ns: 6.36 ns: 3.58 ns: 1300 nm
: -80 °C
(near-infrared: 1.4 µm / 1.7 µm)NIR PMTs (near-infrared photomultiplier tubes)
R5509-43, -73
DIMENSIONAL OUTLINE (Unit: mm)
RELATED PRODUCTS
TPMHA0284EDTPMHA0283EC
Exclusive coolers C9940-01, -02FEATURES
SYSTEM CONFIGURATION
The C9940-01, -02 are exclusive coolers for R5509 series photomultiplier tubes. To op-erate the R5509 series, it is necessary to cool it down to -70 °C to -90 °C range (recom-mended temperature: -80 °C). Cooling suppresses dark current and improves signal to noise ratio to make weak near infrared light measurements possible with high sensitivi-ty.Two types are available with different line voltage regulations, 100 V to 115 V (C9940-01) and 230 V (C9940-02) .
OTHER ACCESSORIES REQUIRED
TACCC0123EB
51 ± 1
3
8
PHOTOCATHODE(3 × 8)
APERTURE
20
88 ±
214
MA
X.
PHOTOCATHODE
HA COATING
LIGHT SHIELD
15°
33° ± 2°
90° ± 2.5°
Bottom View
SHORT PIN
123
4567
98
11 12 1314
151617
1819
2021
KDY2
DY4
DY1
P
DY8
DY10
ICIC
IC IC DY9DY7
DY5
DY3
DY6
IC
B
ICIC
IC
10
Top View
PIN No.3PIN No.1
PIN No.14
DYKPBIC
: Dynode: Photocathode: Anode: Bias Electrode: Internal Connection (Do not use)
Temperature range: -70 °C to -90 °CVoltage divider, Magnetic shield case in-
cludedAlarm with output when liquid nitrogen is
running outNo external dry nitrogen is required
Liquid nitrogen containerFrom 10 L to 25 L capacityThe opening of the container should allow the 15 mm diameter liquid nitrogen suction pipe to be in-serted.
High voltage power supplyCapable to provide stable output of -1500 V, 0.2 mARecommended : C4840
High voltage cable with an SHV-P connectorRecommended : E1168-17
Signal COAX cable with a BNC-P connectorRecommended : E1168-05
AC POWER CABLE
PMT SOCKET ASSEMBLY
CONTROLL CABLE
HEAT INSULATING HOSE
LIQUID NITROGEN SUCTION PIPE
PMT
PMT COOLER HOUSING
POWER SWITCH
TEMPERATURE CONTROLLER
VINYL TUBE
100 kΩ LOAD REGISTER BOX
COOLER
COOLER CONTROLLER LIQUID NITROGEN CONTAINER(NOT INCLUDED)
Photoluminescence measurement
InAlAs/InGaAssingle quantum wells
Sample
Undoped SI-InPSample
Emission from deep levels in a semi-in-sulating InP substrate at room tempera-ture was clearly observed.
Data shows that intensity distribution of the photoluminescence spectrum chan-ges with excitation light power. Using a "low power excitation light" allows high-precision measurement not subject to variations in excitation light intensity. It is therefore essential to use "low power excitation light" in order to measure emission from deep levels and total band-to-band transition.
Photoluminescence spectra emitted from a sample with different InGaAs well widths.This data proves that intensity distribu-tion of the spectrum corresponding to each quantum well varies with the exci-tation light power.
77K
TPMHB0627EB
SAMPLE TEMPERATURE
77K
300K
TPMHB0621EA
TPMHB0622EA
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
Detector: NIR PMT R5509-73
Detector: NIR PMT R5509-73
( )room temperature
APPLICATION EXAMPLES
Sample structure: InAlAs/InGaAs (SQWs)/InP(sub)
1100 1200 1300 1400
WAVELENGTH (nm)
1500 1600 1700IN
TE
NS
ITY
(R
ELA
TIV
E)
EXCITATION LIGHT POWER: 8 µW
EXCITATION LIGHT POWER: 0.05 mW
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 3 mW
30 Å 60 Å 100 Å
InGaAs50 Å
InAlAs300 Å
InGaAs30 Å
InAlAs300 Å
InGaAs60 Å
InAlAs300 Å
InGaAs100 Å
InAlAs3000 Å
Fe dopedInP (100) sub.
EXCITATION LIGHT: SHG Nd: YAG (532 nm)SLIT: 0.2 mm × 0.2 mmSAMPLE TEMPERATURE: 77K
700 800 900 1000 12001100
WAVELENGTH (nm)
14001300 16001500 1700
INT
EN
SIT
Y (
RE
LAT
IVE
)
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 3 mW
X10X1
X1
X10
EXCITATION LIGHT: SHG Nd: YAG (532 nm)SLIT: 0.5 mm × 0.5 mmSAMPLE TEMPERATURE: 300K
800 900 1000 12001100
WAVELENGTH (nm)
14001300 16001500
INT
EN
SIT
Y (
RE
LAT
IVE
)
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 0.05 mW
EXCITATION LIGHT POWER: 3 mW
EXCITATION LIGHT : SHG Nd: YAG (532 nm)SLIT: 0.5 mm × 0.5 mmSAMPLE TEMPERATURE: 77K
Undoped SI-GaAsSample
Emission from deep levels in a semi-in-sulating GaAs substrate at room tem-peratures was clearly observed.
77K
300K
TPMHB0619EA
TPMHB0620EA
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
InAs/InGaAsquantum dots structure
Sample
Figure shows PL spectrum at the room temperature from InAs quantum dots covered with InGaAs layer.Size and uniformity of quantum dots can be estimated from the peak wavelength and the FWHM of PL spectrum.However, when excitation power is in-creased, luminescence of shorter wave-length (1200 nm) becomes strong, and the estimate of exact peak wavelength and the FWHM becomes impossible.Therefore, it is important that excitation power must be kept as weak as possi-ble for precise measurement.For this reason, a high sensitivity detec-tor is required.
Basic Structure
TPMHB0664EA
300K
InGaAs 15 nm
InAs dots
InGaAs 5 nm
GaAs buffer 300 nm
GaAs (100) substrate
SAMPLE TEMPERATURE
Photoluminescence measurement
Detector: NIR PMT R5509-73
Detector: NIR PMT R5509-43
( )room temperature
( )room temperature
APPLICATION NOTE
700 800 900 1000 12001100
WAVELENGTH (nm)
14001300 16001500 1700
INT
EN
SIT
Y (
RE
LAT
IVE
)
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 3 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)SLIT: 0.5 mm × 0.5 mmSAMPLE TEMPERATURE: 300K
700 800 900 1000 12001100
WAVELENGTH (nm)
14001300 16001500 1700
INT
EN
SIT
Y (
RE
LAT
IVE
)
EXCITATION LIGHT POWER: 2 nW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)SLIT: 0.5 mm × 0.5 mmSAMPLE TEMPERATURE: 77K
WAVELENGTH (nm)
INT
EN
SIT
Y (
RE
LAT
IVE
)
12001050 1100 1150 13501250 1300 14501400
EXCITATIONLIGHT
30 mW
3 mW
0.3 mW
0.03 mW
3 µW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)SLIT: 0.2 mm / 0.2 mmSAMPLE TEMPERATURE: 300 K
Photoluminescence measurement
B-Dope Si (111)Sample
low resistivity wafer ρ > 0.02 kΩcm
Silicon, the indirect bandgap semicon-ductor, has lower photoluminescence emission compared with direct bandgap semiconductors such as GaAs, InP, etc. However, the NIR-PMT has made it possible to observe a clear photolumi-nescence spectra from a room tempera-ture silicon wafer even at low power ex-citation lights.
77K
300K
TPMHB0623EA
TPMHB0624EA
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
InGaAsP/InPSample
An epitaxial wafer at the room tempera-ture can be evaluated.
Photoluminescence measurement in 77 K sample is possible at low power excitation lights from a few to tens of mi-cro-watts.
77K
300K
TPMHC0187EB
TPMHB0617EA
TPMHB0618EA
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
Basic Structure
Detector: NIR PMT R5509-43
Detector: NIR PMT R5509-43
( )room temperature
( )room temperature
900 1000 12001100
WAVELENGTH (nm)
14001300
INT
EN
SIT
Y (
RE
LAT
IVE
)
EXCITATION LIGHT POWER: 3 mW
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 0.05 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)SLIT: 0.5 mm × 0.5 mmSAMPLE TEMPERATURE: 300K
900 1000 12001100
WAVELENGTH (nm)
14001300IN
TE
NS
ITY
(R
ELA
TIV
E)
EXCITATION LIGHT POWER: 3 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)SLIT: 0.05 mm × 0.05 mmSAMPLE TEMPERATURE: 77K
1100 1200 1300 1400
WAVELENGTH (nm)
1500 1600 1700
INT
EN
SIT
Y (
RE
LAT
IVE
)
EXCITATION LIGHT: SHG Nd: YAG (532 nm)SLIT: 0.5 mm × 0.5 mmSAMPLE TEMPERATURE: 300K
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 3 mW
1100 1200 1300 1400
WAVELENGTH (nm)
1500 1600 1700
INT
EN
SIT
Y (
RE
LAT
IVE
)
EXCITATION LIGHT POWER: 8 µW
EXCITATION LIGHT POWER: 0.05 mW
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 3 mW
EXCITATION LIGHT: SHG Nd: YAG (532 nm)SLIT: 0.2 mm × 0.2 mmSAMPLE TEMPERATURE: 77K
p + InP SUB350 µm
p + InP 2 µm
p - InGaAsP2 µm
p - InP0.02 µm 2 × 1016 cm-3
APPLICATION EXAMPLES
Photoluminescence measurement
β-FeSi2Sample
The NIR PMT measures the photolumines-cence of β-FeSi2 currently being studied for use as an environmentally-friendly semiconductor material. This β-FeSi2 sample is a silicide thin film grown by Fe-irradiation onto a silicon (111) substrate kept at a high temperature. As can be seen from the graph on the right, the photoluminescence intensity at a sample temperature of 77 K is at least 30 times higher than at 300 K. The peak wa-velength of the 77 K sample occurs at 1562 nm while that of the 300 K sample shifts slightly to 1585 nm.(The longer wavelength side is limited by the photomultiplier tube sensitivity.)
Detector: NIR PMT R5509-73
Cathodeluminescence (CL) measurement
InAs/InPSample
The data on the right show images of cathodolu-minescence (CL) emitted from InAs islands in an InAs/InP multiple quantum well structure, observed with a scanning electron microscope (SEM) to which a light collection system and a monochro-mator were installed. The right-hand CL images were taken with the SEM using a Ge PIN photo-diode. These images are not clear due to external noise such as cosmic rays. In contrast, the left-hand data taken with an R5509-43 photomultiplier tube shows clear, sharp CL images with a high S/N ratio. The R5509-43 allows high-sensitivity CL measurements in the near infrared region, which are expected to prove useful in optical evaluations of samples, analysis of inorganic or organic sub-stances, and other near infrared spectroscopy.
Cathodoluminescence (CL) MeasurementWhen a sample is irradiated by high-velocity elec-tron beams, electron-hole pairs in the sample are excited and then recombine while producing a char-acteristic luminescence known as cathodolumines-cence (CL). Information on the internal electron structures of the sample can be studied by measur-ing this luminescence.
ElectronProbe
Accelerating VoltageCurrent
5 kV10 nA
10K
Condition
990 nm 990 nm
1010 nm 1020 nm
1030 nm 1040 nm
R5509-43 Ge PIN-PD77 K
SAMPLE TEMPERATURE
Detector: NIR PMT R5509-43
WAVELENGTH (nm)
INT
EN
SIT
Y (
mV
)
0
1
2
3
4
5
6
1300 1400 1500 1600 1700
×10
SAMPLE TEMPERATURE: 300 K(ROOM TEMPERATURE)
SAMPLE TEMPERATURE: 77 K
EXCITATION LIGHT: SHG Nd: YAG (532 nm) 0.2 mJ, 10 ns, 20 Hz
TPMHB0783EA
APPLICATION NOTE
Photos: By courtesy of Prof. Y. Takeda, Dept. of Materials Science and Engineering, Graduate School of Engineering, Nagoya University; Prof. A. Nakamura, Center for Integrated Research in Science and Engineering, Nagoya University
Fluorescence lifetime measurement
InAs Quantum DotsSample
Data shown here is photoluminescence lifetime from InAs quantum dots grown on an InGaAs substrate, measured with time-correlated single photon counting (TCSPC) technique.
300KSAMPLE TEMPERATURE
InGaAs 15 nm
InAs QDs
InGaAs 5 nm
GaAs buffer 300 nm
GaAs (100) substrate
Basic Structure
Fluorescence lifetime measurement
InGaAsPSample
NIR PMTs allow making fluorescence life-time measurements in the near infrared region. Up till now this has been difficult to measure with conventional detectors.This measurement shows the fluores-cence lifetime of a compound semicon-ductor (at room temperature).
EXCITATION: Nd: YAG (1064 nm)FLUORECENT WAVELENGTH: 1347 nmSAMPLE TEMPERATURE: 300 K
τ=430.79 ns was obtained after deconvolusion by the software.
300KSAMPLE TEMPERATURE
Detector: Detector equivalent to the H10330-45 NIR PMT moduleSystem: Near-infrared lifetime measurement system C7990 series
Detector: Detector equivalent to the H10330-75 NIR PMT moduleSystem: Near-infrared life time measurement system C7990 series
TPMHB0784EA
TPMHB0785EA
( )room temperature
( )room temperature
TIME (ns)
INT
EN
SIT
Y
0 2.5100
101
102
103
104
5.0 7.5 10.0
Instrument Response
τ1 = 225 ps, τ2 = 1.4 ns
Decay & Fitting
EXCITATION: YAG (1064 nm), WIDTH: 1.15 nsWAVELENGTH: 1274 nm
CO
UN
TR
ES
IDU
ALS
0 100
102
5.7
0.0
-5.7
103
200 300 400 500 600 700 800 900
TIME (ns)
IR3 (Decay+IRF4k)InP (0.4 µm), GaInAsInP (0.4 µm), GaInAsInP (0.4 µm), GaInAs
Fit Resultsτ1 430.79 nsχ2 1.266
APPLICATION EXAMPLES
Measurement of Raman spectroscopy
Rhodamine B in Ethanol Solution(20 µmol/L)
Sample
Raman spectroscopy is effective in study-ing the structure of molecules in a solution. In particular, near infrared Raman spectro-scopy enables measurement of samples which were previously impossible with conventional methods using visible light excitation because of the influence of flu-orescence. In this application, clear Ra-man spectra of solute rhodamine B (marked by ) are measured, as well as a Raman spectrum of ethanol solution. This data was obtained with weak excitation light averaging 10 mW output using pulsed excitation light and gate detection method under fluorescent room lighting conditions.
300K
TPMHB0452EB
SAMPLE TEMPERATURE
Detector: Detector equivalent to the H10330-45 NIR PMT module
Measurement of singlet oxygen
TPMHB0665EA
TPMHB0666EA
Using the R5509-43 and a pulsed laser, singlet oxygen emission with a peak at 1270 nm were efficiently detected by sig-nal processing with a gated pulse coun-ter, reducing effects of fluorescence.(Data obtained by CW YAG laser excitation is also shown in the same graph for compari-son.)
The graph on the right shows detection limits evaluated by changing the concen-tration of the photosensitizer Rose Ben-gal. This proves that emissions from sin-glet oxygen of low concentration, even only 1 nmol/L, can be detected.
300K
300K
Singlet oxygenSample
Rose Bengal in pure water
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
Detector: NIR PMT R5509-43
( )room temperature
( )room temperature
( )room temperature
1600 12001400 1000 800
RAMAN SHIFT (cm-1)
INT
EN
SIT
Y
RHODAMINE B POWDER
ETHANOL
SAMPLE
EXCITATION LIGHT: LD-PUMPED ND: YAG (1064 nm) 10 mW, 10 ns pulse, 10 kHzSAMPLE TEMPERATURE: 77 K
11500
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
1200 1250
WAVELENGTH (nm)
1300 1350
INT
EN
SIT
Y (
RE
LAT
IVE
)
EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 12 mJ, PULSE WIDTH: 10 ns, 20 HzSLIT: 2 mm / 2 mmGATED DELAY TIME: 1.5 µs GATE TIME: 5 µs
CW
GATED PHOTON COUNTING METHOD
GATED PHOTON COUNTING METHOD
1100101
102
103
104
105
1150 1200 1250
WAVELENGTH (nm)
13501300 1400 1450
SIG
NA
L O
UT
PU
T (
CO
UN
TS
)
EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 12 mJ, PULSE WIDTH: 10 ns, 20 HzSLIT: 2 mm / 2 mm
CONCENTRATIONOF ROSE BENGAL
10 µmol/L
1 µmol/L
1 nmol/L
APPLICATION NOTE
TPMO1040E01JUL. 2008 IP(1500)
APPLICATION EXAMPLESMeasurement of singlet oxygen
TPMHB0667EA
TPMHB0668EA
TPMHB0786EA
Lifetime characteristics and emission spectrum of the singlet oxygen when the photosensitizer Rose Bengal was dissolved in acetone, methanol and wa-ter were measured.
Singlet oxygen lifetime can be meas-ured with high accuracy, by using gated photon counting techniques that utilize high-speed response of a near infrared PMT and allow continuous scan of sig-nal pulses obtained in a short gate time (sampling time).
In solvents which singlet oxygen has a long life, there is little singlet oxygen that thermally disappears so more sin-glet oxygen disappears during the emis-sion process. This results in an increase in the entire emission level.
300K
300K
Singlet oxygenSample
Rose Bengal in acetone, methanol and water
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
Detector: NIR PMT R5509-43
5-ALA (Photosensitizer)Sample Temporal change of 1O2 production
Cumulative 1O2 counts during PDT at each fluence rate Proportion of cell death after PDT at each fluence rate
EXCITATION: 80 mW/cm2 EXCITATION: 160 mW/cm2 EXCITATION: 240 mW/cm2
0
20
40
60
80
100
160 mW/cm2 240 mW/cm280 mW/cm2
CE
LL V
IAB
ILIT
Y (
%)
0
200
400
600
800
1000
1200
1400
1600
1800
160 mW/cm2 240 mW/cm280 mW/cm2
CU
MU
LAT
IVE
1O
2 C
OU
NT
S
0 1000
50
100
150
200
250
300
200
TIME (s)
PH
OT
ON
CO
UN
TS
300 400
with 5-ALA
without 5-ALA
0 1000
50
100
150
200
250
300
200
TIME (s)
PH
OT
ON
CO
UN
TS
300 400
with 5-ALA
without 5-ALA
0 1000
50
100
150
200
250
300
200
TIME (s)
PH
OT
ON
CO
UN
TS
300 400
with 5-ALA
without 5-ALA
Experimental conditions
Data courtesy of: Junkoh Yamamoto, Department of Neurosurgery, University of Occupational and Environmental Health, JapanToru Hirano, Photon Medical Research Center, Hamamatsu University School of Medicine, Japan
Photosensitizer: 5-ALACancer cells: Rat brain tumor cells 9LExcitation light: 635 nm
In photodynamic therapy (PDT), singlet oxygen plays an important role in killing tumor cells. Changes in the amount of generated singlet oxygen can be ob-served at the cellular level. This implies that monitoring the singlet oxygen is the key to setting optimal PDT laser irradia-tion conditions.Accurate measurements can be made since NIR PMT modules can directly capture weak singlet-oxygen emissions (1270 nm) from cells.
Detector: Detector equivalent to the H10330-45 NIR PMT module
( )room temperature
( )room temperature
12000
0.2 × 104
0.4 × 104
0.6 × 104
0.8 × 104
1.0 × 104
1.2 × 104
1.4 × 104
1220 1240 1260
WAVELENGTH (nm)13001280 1320 1340
INT
EG
RA
TE
D C
OU
NT
S (
100
SH
OT
)
EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 2.5 mJ, PULSE WIDTH: 10 ns, 20 HzSLIT: 2 mm / 2 mmGATED DELAY TIME: 3 µsGATE TIME: 50 µs
CH3COCH3
CH3OH
H2O
0100
101
102
103
104
10 20 30 40
TIME (µs)7050 60 80 90 100
INT
EG
RA
TE
D C
OU
NT
S (
500
SH
OT
)
EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 2.5 mJ, PULSE WIDTH: 10 ns, 20 HzSLIT: 2 mm / 2 mmGATE (sampling) TIME: 1 µs
τ=62 µs in CH3COCH3
(ACETONE)
τ=11 µs in CH3OH (METHANOL)
τ=3.7 µs in H2O(WATER)
HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.comGermany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.deFrance: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.frUnited Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.ukNorth Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.seItaly: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
WEB SITE www.hamamatsu.com
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications aresubject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K.
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