a. wojciktamu x. wang, d.m. mittleman, and j. konorice s.a. crookernhmfl, los alamos alexey belyanin...
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A. Wojcik TAMUX. Wang, D.M. Mittleman, and J. Kono RiceS.A. Crooker NHMFL, Los Alamos
Alexey Belyanin
Texas A&M University
Terahertz studies of collective excitations and microscopic physics in semiconductor
magneto-plasmas
NSF CAREERNSF OISE
N-doped InSb: a classic narrow-gap semiconductor
~ 0.2 eV
~ 0.8 eV
McCombe & Wagner 1975
Strong non-parabolicity;Non-equidistant cyclotron transitions
Small band gapSmall electron mass ~ 0.014 m0
Palik & Furdyna 1970
Many frequency scales in doped semiconductors fall intothe THz spectral range
1 THz = 4.1 meV
• Plasma frequency
• Fermi energy
• Electron scattering rates
• Cyclotron frequency in the magnetic field of ~ 1 Tesla
• Intra-donor transition frequencies
• Phonon frequencies
• Rich information can be extracted from THz spectroscopic studies
• Exotic conditions for atoms and plasma in superstrong magnetic fields
• Potential for optoelectronic devices utilizing THz coherence
THz time-domain spectroscopy
B
TransmitterReceiver
CPA laser1 KHz, 800 nm
CPA laser1 KHz, 800 nm
Current Amplifier
Lock_in amplifier
ZnTe1/4
WC
Delay stage
ZnTe
Sample: n-doped InSb crystalSample #1: density = 2.1E14 cm-3 Sample #2: density = 3.5E14 cm-3Sample #3 density = 6.1E14 cm-3
T = 1.6-300 Kf = 0.1-2.5THzB = 0-10 T
Incident and transmitted THz pulses
15
10
5
0
-5
x10-3
-30 -20 -10 0 10 20 30
1.375 Tesla
main peak1st multiple refleciton (MR) peak (sample)
2nd MR peak (sample)
1st MR peak from inner window
1st MR from outer window
The transmittance contour map of sample # 1
Magnetic field, Tesla
Fre
qu
ency
, T
Hz
• Plasma edge• Cyclotron resonance• Intra-donor transition lines at low T and high B• Interference features
T = 1.6 K T = 40 K
0.4
0.2
0.0210
1.5 Te
0.4
0.2
0.0
1 Td
0.4
0.2
0.0
0.25 Tb
0.4
0.2
0.0
0 T
a
0.4
0.2
0.0
Tra
nsm
ittan
ce
0.5 Tc
Experiment Theory
210
1.5 Tj
1 Ti
0.5 Th
0.25 Tg
0 T
f
Frequency (THz)
Transmittance at 40 K: only free-carrier effects expected
Free-carrier effects: interference of normal magnetoplasmon modes
“Cold” plasma approximation: ,,|| FTVk
FMS
n2
impuritiesphononsii
nhBh
ph
eBe
pee
)()(
222
...)()(
222
hBh
ph
eBe
peo iin
CRI CRA
BEi
~ 16
CRACRI
he
hehpe m
Ne
,
,2
2,
4 cm
Be
hehBe
,,
||
BepeBeoe 22,0 4
2
1
0.4
0.2
0.0210
1.5 Te
0.4
0.2
0.0
1 Td
0.4
0.2
0.0
0.25 Tb
0.4
0.2
0.0
0 T
a
0.4
0.2
0.0
Tra
nsm
ittan
ce
0.5 Tc
Experiment Theory
210
1.5 Tj
1 Ti
0.5 Th
0.25 Tg
0 T
f
Frequency (THz)
Transmittance at 40 K: only free-carrier effects expected
0.5 1 1.5 2 2.5
0.1
0.2
0.3
0.4
0.5 1 1.5 2 2.5
0.1
0.2
0.3
0.4
0.5 1 1.5 2 2.5
0.1
0.2
0.3
0.4
0.5 1 1.5 2 2.5
0.05
0.1
0.15
0.2
CRI
CRA
a
dc
b
experiment
theory
Interference structure is very sensitive to the cyclotron transition energy and the density of free electrons
Yields information on the electron cyclotron mass, band non-parabolicity, compensation ratio, and binding energy on donors (Tellurium) as a function of magnetic field
2/1
*2||
22
||2
1
22
1
4
Bg
m
knE
EE B
eBeg
gn
]2/exp[~ TkENN Bbindne
3/13/12*
2
~)(
~ Bra
eE
BBohrstbind
eB
crB
2 A
ema
e
stBohr 600~~
2
2*
a
dc
bexperiment
theory
Temperature map at B = 0.9 T
0.20
0.15
0.10
0.05
0.00
Tra
nsm
ittan
ce
250200150100500
Temperature (K)
e
experiment
-0.2
-0.1
0.0
0.1
0.2
Tra
nsm
itted
Fie
ld
250200150100500
Temperature (K)
b
ordinary extraordinary interference
100
80
60
40
20
0
Imag
inar
y n e
, o
250200150100500
Temperature (K)
d
ne
no
400
300
200
100
0
Rea
l ne,
o
250200150100500
Temperature (K)
c
ne
no
0.20
0.15
0.10
0.05
0.00
Tra
nsm
ittan
ce
250200150100500
Temperature (K)
f
theory
5x1014
4
3
2
1
0
n i (
cm-3
)
20016012080
Temperature (K)
a
doping density
Position of the peak is very sensitive to thermal band gap EgT :
]2/exp[~ 2/3 TkETn BgTi
EgT = 0.215 eV
Electron scattering rate
0.4
0.3
0.2
0.1
0.0
(T
Hz)
3002001000Temperature (K)
(a)
8x105
6
4
2
0
(c
m-2
/Vs)
3002001000
Temperature (K)
(b)
Temperature dependence at B = 0.9 T
Impurity scattering
Polar optical phononsElectron-hole scattering
Scattering mechanisms:
• Ionized and neutral impurities• Acoustic deformation potential• Piezoelectric• Optical deformation potential• Polar optical phonons• intrinsic carriers
Electron-”ion” scattering in a strong magnetic field
http://hyperphysics.phy-astr.gsu.edu
TkEb
e
Tk
eb
b
LbrLbB
BkinsstBst
s
s
DsBDs
~~from~where
,ln~:or,0
22
2
Debye radius pe
FermiTD
VVL
],max[
~
s
BsDBs b
rbLrb ln~: 2Gyroradius:
classical~
quantum
pe
ThermalB
B
Vr
eB
cr
2
)(~from~where~:
223/1
2
23/42 effBe
effststeffeffDsB
bm
b
e
B
mcbBbLbr
Similar to magnetic white dwarfs and neutron stars!
Low-temperature effects: donor absorption lines and field-induced localization
measurements
1.6 K 40 KNn = 2.1x1014 cm-3
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tra
nsm
ittan
ce (a.
u)
1.00.80.60.40.2
Frequency (THz)
2T
2.5T
3T
4T
5T
6T
7T
8T
8.5T
9T
9.5T
10T
Donor (tellurium) transition lines
McCombe & Wagner 1975
CRA 1s-2p+ transition (000)-(110)
CRI 1s-2p- transition (000)-(0-10)
Cyclotron resonance
Low-temperature effects: field-induced localization
T = 1.6 K, Nn = 2.1x1014 cm-3
Quantum phase transition metal-insulator?
Gradual magnetic freeze-out of carriers?
25.0~*3/1Bohrn aN
B = 0: Nn ~ 6x1013 cm-3
Edwards & Sienko 1978
T1~3/1*2*
cBohrBBohr Bara
Gao et al., APL 2006Shayegan et al. PRB 1988
]2/exp[~ TkENN Bbindne
3/13/12*
2
~)(
~ Bra
eE
BBohrbind
Mani et al., PRB 1989,1991
Freeze-out picture:
3/1]/1ln[~ln BNexx
Low-temperature effects: field-induced localization
T = 1.6 K, Nn = 2.1x1014 cm-3
Not compatible with a gradual magnetic freeze-out?
Trying scaling behavior of dielectric constant … scBB
Efros & Shklovskii 1976 etc.
“Releasing” electrons at B ~ Bc
• Coherent time-domain THz spectroscopy provides quantitative
information on the band structure, electron scattering processes,
and collective excitations
• Intriguing low-temperature behavior of the dielectric response;
nature of the magnetic field-induced localization is still unclear
• Also for future studies: dispersion , deviation from ideal
plasma, kinetic effects near the cyclotron resonance
Conclusions
)(k