3.8 ghz linear power amplifier and bts driver mmz38333bt1 ... · 3.8 ghz linear power amplifier and...
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MMZ38333BT1
1RF Device DataNXP Semiconductors
3.8 GHz Linear Power Amplifier andBTS DriverHigh Efficiency/Linearity AmplifierThe MMZ38333B is a 3--stage high linearity InGaP HBT broadband amplifier
designed for small cells and LTE base stations. It provides exceptional linearityfor LTE air interface with an ACPR of –48 dBc at an output power greater than22.3 dBm, covering frequencies from 3400 to 3800 MHz. It operates off a 5 Vsupply voltage. The amplifier is internally pre--matched with the flexibility tochange external matching to suit the final application and offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.
• Typical Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
FrequencyPout(dBm)
Gps(dB)
ACPR(dBc)
ICC(mA) Test Signal
3500 MHz (1) 22.3 38.2 –48.0 482 LTE 20 MHz
3500 MHz (2) 17.4 36.7 –48.0 242
3500 MHz (3) 22.6 38.3 –48.0 460
3700 MHz (1) 21.6 38.0 –48.0 470
3700 MHz (2) 18.2 37.0 –48.0 260
3700 MHz (3) 22.8 37.7 –48.0 495
1. High bias, high linearity. 2. Low bias, high linearity. 3. High power.
Features• Frequency: 3400–3800 MHz
• P1dB: 31.7 dBm @ 3600 MHz
• Power gain: 37 dB @ 3600 MHz
• Active bias control (adjustable externally)
• Power down control via VBIAS• 5 volt supply
• Cost--effective 24--pin, 4 mm QFN surface mount plastic package
Figure 1. Functional Block Diagram
VCC3/RFout3
VCC3/RFout3
PDET
RFin1
VCC3/RFout3
VBA1 VBIASVBA2
BIASCIRCUIT
VCC2
VBIAS
RFin2
VCC1/RFout1
Document Number: MMZ38333BRev. 0, 01/2017
NXP SemiconductorsTechnical Data
3400–3800 MHz, 37 dB, 32 dBmInGaP HBT LINEAR AMPLIFIER
MMZ38333BT1
QFN 4 × 4
© 2017 NXP B.V.
2RF Device Data
NXP Semiconductors
MMZ38333BT1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage VCC 6 V
Supply Current ICC 1200 mA
RF Input Power Pin 30 dBm
Storage Temperature Range Tstg –65 to +150 °C
Junction Temperature TJ 175 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to CaseCase Temperature 90°C, VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc Stage 1
Stage 2Stage 3
RθJC698326
°C/W
Table 3. Electrical Characteristics (VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, 3600 MHz, TA = 25°C, 50 ohm system, in NXP CWApplication Circuit)
Characteristic Symbol Min Typ Max Unit
Small--Signal Gain (S21) Gp 36.3 37.9 — dB
Input Return Loss (S11) IRL — 18.1 — dB
Output Return Loss (S22) ORL — 13.0 — dB
Power Output @ 1dB Compression P1dB — 31.7 — dBm
Supply Current ICQ 349 376 404 mA
Supply Voltage VCC — 5 — V
Table 4. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1C
Charge Device Model (per JESD22--C101) C3
Table 5. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 °C
Table 6. Ordering Information
Device Tape and Reel Information Package
MMZ38333BT1 T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel QFN 4 × 4
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
MMZ38333BT1
3RF Device DataNXP Semiconductors
(Top View)
1
2
3
24 23 22
4
N.C.
21 20 19
7 8 9 10 11 12
18
17
16
15
5
6
14
13
Figure 2. Pin Connections
Note: Exposed backside of the package is DC and RFground. N.C. can be connected to GND.
N.C. VCC2 PDET
N.C.
N.C.
N.C.
N.C. N.C.N.C.VBA1 VBA2 VBIAS
N.C.
N.C.
N.C.
N.C.
N.C.
VCC3/RFout3
VCC3/RFout3
VCC3/RFout3
VCC1/RFout1 RFin2
RFin1GND
4RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION (High Bias, High Linearity)
Figure 3. MMZ38333BT1 Test Circuit Schematic
C7
15
R1
C8
ACTIVE BIAS CIRCUIT
VCC1
VBIAS
R3 PDET
C1 C4
C11
6
5
4
3
2
1
R2
C9
16
17
13
14
18
C15
C5
L1C12 C6 C10
L2
VCC2
C13
L3
C14
VCC3
C2 C3
RFOUTPUT
24 23 22 21 20 19
7 8 9 10 11 12
Z1 Z2
Z1: 0.062″ × 0.022″ MicrostripZ2: 0.080″ × 0.022″ Microstrip
L4
L5
RFINPUT
Table 7. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor 04023J5R6BBW AVX
C2 2 pF Chip Capacitor 04023J2R0BBW AVX
C3 0.6 pF Chip Capacitor 04023J0R6BBW AVX
C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor 0603HP--10NXJE Coilcraft
L3 3.3 nH Chip Inductor 0603HP--3N3XJE Coilcraft
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 1.2 kΩ, 1/16 W Chip Resistor RC0402FR--07--1K20L Yageo
R2 390 Ω, 1/16 W Chip Resistor RC0402JR--07--390RL Yageo
R3 27 Ω, 1/16 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
MMZ38333BT1
5RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION (High Bias, High Linearity)
C1
VCC1
VCC2
VDECT
VCC3
QFN 4×4--24HRev. 0 V
BIAS (1)
L5
R1C8
C3C2
C14
C13
C10R3
C15C11
L1L4
R2
C9
C4L3
C12C7
L2
C6
L5 C5
RFIN RFOUT
Figure 4. MMZ38333BT1 Test Circuit Component Layout
PCB actual size: 1.30″ × 1.46″.(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
M132638
Table 7. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor 04023J5R6BBW AVX
C2 2 pF Chip Capacitor 04023J2R0BBW AVX
C3 0.6 pF Chip Capacitor 04023J0R6BBW AVX
C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor 0603HP--10NXJE Coilcraft
L3 3.3 nH Chip Inductor 0603HP--3N3XJE Coilcraft
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 1.2 kΩ, 1/16 W Chip Resistor RC0402FR--07--1K20L Yageo
R2 390 Ω, 1/16 W Chip Resistor RC0402JR--07--390RL Yageo
R3 27 Ω, 1/16 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
(Test Circuit Component Designations and Values table repeated for reference.)
6RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION (Low Bias, High Linearity)
C7
15
R1
C8
ACTIVE BIAS CIRCUIT
VCC1
VBIAS
R3 PDET
C1 C4
C11
6
5
4
3
2
1
R2
C9
16
17
13
14
18
C15
C5
L1C12 C6 C10
L2
VCC2
C13
L3
C14
VCC3
C2 C3
RFOUTPUT
Figure 5. MMZ38333BT1 Test Circuit Schematic
24 23 22 21 20 19
7 8 9 10 11 12
Z1 Z2
Z1: 0.062″ × 0.022″ MicrostripZ2: 0.080″ × 0.022″ Microstrip
L4
L5
RFINPUT
Table 8. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor 04023J5R6BBW AVX
C2 2 pF Chip Capacitor 04023J2R0BBW AVX
C3 0.9 pF Chip Capacitor 04023J0R9BBW AVX
C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor 0603HP--10NXJE Coilcraft
L3 3.3 nH Chip Inductor 0603HP--3N3XJE Coilcraft
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 5.1 kΩ, 1/16 W Chip Resistor RC0402FR--07--5K1L Yageo
R2 715 Ω, 1/16 W Chip Resistor RC0402FR--07--715RL Yageo
R3 27 Ω, 1/16 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
MMZ38333BT1
7RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION (Low Bias, High Linearity)
C1
Figure 6. MMZ38333BT1 Test Circuit Component Layout
VCC1
VCC2
VDECT
VCC3
QFN 4×4--24HRev. 0 V
BIAS (1)
L5
R1C8
C3C2
C14
C13
C10R3
C15C11
L1L4
R2
C9
C4L3
C12C7
L2
C6
L5 C5
RFIN RFOUT
PCB actual size: 1.30″ × 1.46″.(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
M132638
Table 8. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor 04023J5R6BBW AVX
C2 2 pF Chip Capacitor 04023J2R0BBW AVX
C3 0.9 pF Chip Capacitor 04023J0R9BBW AVX
C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor 0603HP--10NXJE Coilcraft
L3 3.3 nH Chip Inductor 0603HP--3N3XJE Coilcraft
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 5.1 kΩ, 1/16 W Chip Resistor RC0402FR--07--5K1L Yageo
R2 715 Ω, 1/16 W Chip Resistor RC0402FR--07--715RL Yageo
R3 27 Ω, 1/16 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
(Test Circuit Component Designations and Values table repeated for reference.)
8RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION
Figure 7. S11 versus Frequency versusTemperature
–5
3300
f, FREQUENCY (MHz)
S11(dB)
3350 3400 3450 3500 3550 3600 3650 3700
–10
–15
–20
–25
–30
Figure 8. S11 versus Frequency
–5
3300
f, FREQUENCY (MHz)
S11(dB)
3350 3400 3450 3500 3550 3600 3650 3700
–10
–15
–20
–25
–30
Figure 9. S21 versus Frequency versusTemperature
f, FREQUENCY (MHz)
42
S21(dB)
–40°C
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
3300
41
40
39
38
37
36
35
25°C
85°C
3350 3400 3450 3500 3550 3600 3650 3700
Figure 10. S21 versus Frequency
f, FREQUENCY (MHz)
42
S21(dB)
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
3300
41
40
39
38
37
36
353350 3400 3450 3500 3550 3600 3650 3700
–5
3300 3350 3400 3450 3500 3550 3600 3650 3700
–10
–15
–20
–25
–30
Figure 11. S22 versus Frequency versusTemperature
f, FREQUENCY (MHz)
S22(dB) –40°C
85°C
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
–5
3300 3350 3400 3450 3500 3550 3600 3650 3700
–10
–15
–20
–25
–30
Figure 12. S22 versus Frequency
f, FREQUENCY (MHz)
S22(dB)
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
VCC1 = VCC2 = VCC3 = VBIAS = 5 VdcVCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
–40°C85°C
25°C
HIGH BIAS, HIGH LINEARITY LOW BIAS, HIGH LINEARITY
25°C
MMZ38333BT1
9RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION
HIGH BIAS, HIGH LINEARITY LOW BIAS, HIGH LINEARITY
Figure 13. Stage Collector Current versusOutput Power versus Temperature
Pout, OUTPUT POWER (dBm)
24
I CC,COLLECTORCURRENT(mA)
14 16 3018 20 22 2826
ICC3
Pout, OUTPUT POWER (dBm)
900
800
700
400
600
300
200
500
100
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHz CW
ICC2
0
1000
25°C25°C
25°C
–40°C
32
–40°C
–40°C85°C
ICC1
85°C
85°C
Figure 14. Stage Collector Current versusOutput Power
Pout, OUTPUT POWER (dBm)
24
I CC,COLLECTORCURRENT(mA)
14 16 3018 20 22 2826
ICC3
Pout, OUTPUT POWER (dBm)
900
800
700
400
600
300
200
500
100
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHz CW
ICC20
1000
32
ICC1
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHz CW
–40°C
85°C
25°C
Figure 15. Power Gain versus Output Powerversus Temperature
Pout, OUTPUT POWER (dBm)
39
38
37
24
Gps,POWER
GAIN(dB)
14 1632
30
36
18 20 22 2826
40
35
34
33
32
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHz CW
Figure 16. Power Gain versus Output Power
Pout, OUTPUT POWER (dBm)
39
38
37
24
Gps,POWER
GAIN(dB)
14 1632
30
36
18 20 22 2826
40
35
34
33
32
2.4
2.0
1.6
0.4
P DET,POWER
DETECTOR(V)
1.2
0
0.8
85°C
2.8
Pout, OUTPUT POWER (dBm)
Figure 17. Power Detector versus Output Powerversus Temperature
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHzLTE 20 MHz 3GPP TM1.1 Signal
–40°C
2.4
2.0
1.6
0.4
P DET,POWER
DETECTOR(V)
1.2
0
0.8
2.8
Pout, OUTPUT POWER (dBm)
Figure 18. Power Detector versus Output Power
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHzLTE 20 MHz 3GPP TM1.1 Signal
25°C
2010 12 14 16 18 2422 2010 12 14 16 18 2422
10RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION
–40°C
–30
ACPR
(dBc)
2010 12 14 16 18 2422–66
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHzLTE 20 MHz 3GPP TM1.1 Signal
–52
–46
–42
–50
–48
–54
–44
–56
Figure 19. ACPR versus Output Powerversus Temperature – LTE
Pout, OUTPUT POWER (dBm)
ACPR
(dBc)
2010 12 14 16 18 2422
–40°C
85°C
–58
–60
–62
–64
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHzLTE 20 MHz 3GPP TM1.1 Signal
Figure 20. ACPR versus Output Power – LTE
Pout, OUTPUT POWER (dBm)
–62
–58
–54
–50
–46
–42
–38
–34
HIGH BIAS, HIGH LINEARITY LOW BIAS, HIGH LINEARITY
–52
–46
–42
–50
–48
–54
–44
–56
Figure 21. ACPR versus Output Powerversus Temperature – W--CDMA
Pout, OUTPUT POWER (dBm)
ACPR
(dBc)
2010 12 14 16 18 2422
25°C
85°C–58
–60
–62
–64
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHzSingle--Carrier W--CDMA 3GPP TM1 Unclipped
–30ACPR
(dBc)
2010 12 14 16 18 2422–66
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHzSingle--Carrier W--CDMA 3GPP TM1 Unclipped
Figure 22. ACPR versus Output Power – W--CDMA
Pout, OUTPUT POWER (dBm)
–62
–58
–54
–50
–46
–42
–38
–34
25°C
MMZ38333BT1
11RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION (High Bias, High Linearity)
C7
15
R1
C8
ACTIVE BIAS CIRCUIT
VCC1
VBIAS
R3 PDET
C1 C4
C11
6
5
4
3
2
1
R2
C9
16
17
13
14
18
C15
C5
L1C12 C6 C10
L2
VCC2
C13
L3
C14
VCC3
C2 C3
RFOUTPUT
Figure 23. MMZ38333BT1 Test Circuit Schematic
24 23 22 21 20 19
7 8 9 10 11 12
Z1 Z2
Z1: 0.052″ × 0.022″ MicrostripZ2: 0.070″ × 0.022″ Microstrip
L4
L5
RFINPUT
Table 9. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor 04023J5R6BBW AVX
C2 2 pF Chip Capacitor 04023J2R0BBW AVX
C3 0.2 pF Chip Capacitor 04023J0R2BBW AVX
C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor 0603HP--10NXJE Coilcraft
L3 3.3 nH Chip Inductor 0603HP--3N3XJE Coilcraft
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 1.2 kΩ, 1/16 W Chip Resistor RC0402FR--07--1K20L Yageo
R2 390 Ω, 1/16 W Chip Resistor RC0402JR--07--390RL Yageo
R3 27 Ω, 1/8 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
12RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION (High Bias, High Linearity)
Figure 24. MMZ38333BT1 Test Circuit Component Layout
R3
C15C11
L1
L5 C1R1
C2 C3
C13
C14C10
C12C7
L4
R2C8
C9
C6
C4
L3
L2
C5
VCC1
VCC2
VDECT
VCC3
QFN 4×4--24HRev. 0
VBIAS (1)
RFIN RFOUT
PCB actual size: 1.30″ × 1.46″.(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
M132638
Table 9. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor 04023J5R6BBW AVX
C2 2 pF Chip Capacitor 04023J2R0BBW AVX
C3 0.2 pF Chip Capacitor 04023J0R2BBW AVX
C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor 0603HP--10NXJE Coilcraft
L3 3.3 nH Chip Inductor 0603HP--3N3XJE Coilcraft
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 1.2 kΩ, 1/16 W Chip Resistor RC0402FR--07--1K20L Yageo
R2 390 Ω, 1/16 W Chip Resistor RC0402JR--07--390RL Yageo
R3 27 Ω, 1/8 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ38333BT1
13RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION (Low Bias, High Linearity)
C7
15
R1
C8
ACTIVE BIAS CIRCUIT
VCC1
VBIAS
R3 PDET
C1 C4
C11
6
5
4
3
2
1
R2
C9
16
17
13
14
18
C15
C5
L1C12 C6 C10
L2
VCC2
C13
L3
C14
VCC3
C2 C3
RFOUTPUT
Figure 25. MMZ38333BT1 Test Circuit Schematic
24 23 22 21 20 19
7 8 9 10 11 12
Z1 Z2
Z1: 0.052″ × 0.022″ MicrostripZ2: 0.070″ × 0.022″ Microstrip
L4
L5
RFINPUT
Table 10. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor 04023J5R6BBW AVX
C2 2 pF Chip Capacitor 04023J2R0BBW AVX
C3 0.6 pF Chip Capacitor 04023J0R6BBW AVX
C7, C8 1 uF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor 0603HP--10NXJE Coilcraft
L3 3.3 nH Chip Inductor 0603HP--3N3XJE Coilcraft
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 5.1 kΩ, 1/16 W Chip Resistor RC0402FR--075K1L Yageo
R2 715 Ω, 1/16 W Chip Resistor RC0402FR--07715RL Yageo
R3 27 Ω, 1/16 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
14RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION (Low Bias, High Linearity)
Figure 26. MMZ38333BT1 Test Circuit Component Layout
R3
C15C11
L1
L5 C1R1
C2 C3
C13
C14C10
C12C7
L4
R2C8
C9
C6
C4
L3
L2
C5
VCC1
VCC2
VDECT
VCC3
QFN 4×4--24HRev. 0
VBIAS (1)
RFIN RFOUT
PCB actual size: 1.30″ × 1.46″.(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
M132638
Table 10. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor 04023J5R6BBW AVX
C2 2 pF Chip Capacitor 04023J2R0BBW AVX
C3 0.6 pF Chip Capacitor 04023J0R6BBW AVX
C7, C8 1 uF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor 0603HP--10NXJE Coilcraft
L3 3.3 nH Chip Inductor 0603HP--3N3XJE Coilcraft
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 5.1 kΩ, 1/16 W Chip Resistor RC0402FR--075K1L Yageo
R2 715 Ω, 1/16 W Chip Resistor RC0402FR--07715RL Yageo
R3 27 Ω, 1/16 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ38333BT1
15RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION
HIGH BIAS, HIGH LINEARITY LOW BIAS, HIGH LINEARITY
Figure 27. S11 versus Frequency
–5
3500
f, FREQUENCY (MHz)
S11(dB)
3550 3600 3650 3700 3750 3800 3850 3900
–10
–15
–20
–25
–30VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
Figure 28. S11 versus Frequency
–5
3500
f, FREQUENCY (MHz)
S11(dB)
3550 3600 3650 3700 3750 3800 3850 3900
–10
–15
–20
–25
–30VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
Figure 29. S21 versus Frequency
f, FREQUENCY (MHz)
S21(dB)
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
3500
40
39
38
37
36
353550 3600 3650 3700 3750 3800 3850 3900
Figure 30. S21 versus Frequency
f, FREQUENCY (MHz)
S21(dB)
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
3500
40
39
38
37
36
353550 3600 3650 3700 3750 3800 3850 3900
–5
3500 3550 3600 3650 3700 3750 3800 3850 3900
–10
–15
–20
–25
–30
Figure 31. S22 versus Frequency
f, FREQUENCY (MHz)
S22(dB)
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
–5
3500 3550 3600 3650 3700 3750 3800 3850 3900
–10
–15
–20
–25
–30
Figure 32. S22 versus Frequency
f, FREQUENCY (MHz)
S22(dB)
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
16RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION
HIGH BIAS, HIGH LINEARITY LOW BIAS, HIGH LINEARITY
Figure 33. Stage Collector Current versusOutput Power
Pout, OUTPUT POWER (dBm)
24
I CC,COLLECTORCURRENT(mA)
14 16 3018 20 22 2826
ICC3
Pout, OUTPUT POWER (dBm)
900
800
700
400
600
300
200
500
100
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHz CW
ICC2
0
1000
32
ICC1
Figure 34. Stage Collector Current versusOutput Power
Pout, OUTPUT POWER (dBm)
24
I CC,COLLECTORCURRENT(mA)
14 16 3018 20 22 2826
ICC3
Pout, OUTPUT POWER (dBm)
900
800
700
400
600
300
200
500
100
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHz CW
ICC20
1000
32
ICC1
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHz CW
Figure 35. Power Gain versus Output Power
Pout, OUTPUT POWER (dBm)
39
38
37
24
Gps,POWER
GAIN(dB)
14 1632
30
36
18 20 22 2826
40
35
34
33
32
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHz CW
Figure 36. Power Gain versus Output Power
Pout, OUTPUT POWER (dBm)
39
38
37
24
Gps,POWER
GAIN(dB)
14 1632
30
36
18 20 22 2826
40
35
34
33
32
20
P DET,POWER
DETECTOR(V)
10 12 14 16 18 2422
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHzLTE 20 MHz 3GPP TM1.1 Signal2.4
2.0
1.6
0.4
1.2
0
0.8
2.8
Pout, OUTPUT POWER (dBm)
Figure 37. Power Detector versus Output Power
2.4
2.0
1.6
0.4
P DET,POWER
DETECTOR(V)
1.2
0
0.8
2.8
Pout, OUTPUT POWER (dBm)
Figure 38. Power Detector versus Output Power
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHzLTE 20 MHz 3GPP TM1.1 Signal
2010 12 14 16 18 2422
MMZ38333BT1
17RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION
–30ACPR
(dBc)
2010 12 14 16 18 2422–66
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHz
LTE 20 MHz 3GPP TM1.1 Signal
Single--Carrier W--CDMA 3GPP TM1 Unclipped
Figure 39. ACPR versus Output Power
Pout, OUTPUT POWER (dBm)
–62
–58
–54
–50
–46
–42
–38
–34
–30
ACPR
(dBc)
2010 12 14 16 18 2422–66
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHz
LTE 20 MHz 3GPP TM1.1 Signal
Single--Carrier W--CDMA 3GPP TM1 Unclipped
Figure 40. ACPR versus Output Power
Pout, OUTPUT POWER (dBm)
–62
–58
–54
–50
–46
–42
–38
–34
HIGH BIAS, HIGH LINEARITY LOW BIAS, HIGH LINEARITY
18RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION (High Power)
C7
15
R1
C8
ACTIVE BIAS CIRCUIT
VCC1
VBIAS
R3 PDET
C1 C4
C11
6
5
4
3
2
1
R2
C9
16
17
13
14
18
C15
C5
L1
C12 C6 C10
L2
VCC2
C13
L3
C14
VCC3
C2 C3
RFOUTPUT
Figure 41. MMZ38333BT1 Test Circuit Schematic
24 23 22 21 20 19
7 8 9 10 11 12
Z1 Z2
Z1: 0.030″ × 0.022″ MicrostripZ2: 0.070″ × 0.022″ Microstrip
L4
L5
RFINPUT
Table 11. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor GJM1555C1H5R6DB01 Murata
C2 2 pF Chip Capacitor GJM1555C1H2R0CB01 Murata
C3 0.9 pF Chip Capacitor GJM1555C1HR90BB01 Murata
C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor LL1608--FSL10NJ Toko
L3 3.3 nH Chip Inductor LL1608--FSL3N3S Toko
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 1.1 kΩ, 1/16 W Chip Resistor RC0402FR--07--1K1L Yageo
R2 390 Ω, 1/16 W Chip Resistor RC0402JR--07--390RL Yageo
R3 27 Ω, 1/16 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
MMZ38333BT1
19RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION (High Power)
Figure 42. MMZ38333BT1 Test Circuit Component Layout
R3
C15C11
L1
L5 C1R1
C2 C3
C13
C14C10
C12C7
L4
R2C8
C9
C6
C4
L3
L2
C5
VCC1
VCC2
VDECT
VCC3
QFN 4×4--24HRev. 0
VBIAS (1)
RFIN RFOUT
PCB actual size: 1.30″ × 1.46″.(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
M132638
Table 11. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor GJM1555C1H5R6DB01 Murata
C2 2 pF Chip Capacitor GJM1555C1H2R0CB01 Murata
C3 0.9 pF Chip Capacitor GJM1555C1HR90BB01 Murata
C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor LL1608--FSL10NJ Toko
L3 3.3 nH Chip Inductor LL1608--FSL3N3S Toko
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 1.1 kΩ, 1/16 W Chip Resistor RC0402FR--07--1K1L Yageo
R2 390 Ω, 1/16 W Chip Resistor RC0402JR--07--390RL Yageo
R3 27 Ω, 1/16 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
(Test Circuit Component Designations and Values table repeated for reference.)
20RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION (High Power)
Figure 43. S11 versus Frequency
–5
3300
f, FREQUENCY (MHz)
S11(dB)
3350 3400 3450 3500 3550 3600 3650 3700
–10
–15
–20
–25
–30
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
Figure 44. S21 versus Frequency
f, FREQUENCY (MHz)
42
S21(dB)
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
3300
41
40
39
38
37
36
353350 3400 3450 3500 3550 3600 3650 3700
–10
3300 3350 3400 3450 3500 3550 3600 3650 3700
–11
–12
–13
–14
Figure 45. S22 versus Frequency
f, FREQUENCY (MHz)
S22(dB)
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
Figure 46. Stage Collector Current versusOutput Power
Pout, OUTPUT POWER (dBm)
29
I CC,COLLECTORCURRENT(mA)
24 25 3226 27 28 3130
ICC3
Pout, OUTPUT POWER (dBm)
900
800
700
400
600
300
200
500
100
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHz CW
ICC2
0
1000
33
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHz CW
Figure 47. Power Gain versus Output Power
Pout, OUTPUT POWER (dBm)
39
38
37
29
Gps,POWER
GAIN(dB)
24 2532
32
36
26 27 28 3130
40
35
34
33
33
2.4
2.0
1.6
20
0.4
P DET,POWER
DETECTOR(V)
1.2
026
0.8
14 16 18 2422
2.8
Pout, OUTPUT POWER (dBm)
Figure 48. Power Detector versus Output Power
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHzLTE 20 MHz 3GPP TM1.1 Signal
–15
–16
ICC1
MMZ38333BT1
21RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3400–3600 MHz, 5 VOLT OPERATION (High Power)
–46
–42
–50
–54
–30
Figure 49. ACPR versus Output Power
Pout, OUTPUT POWER (dBm)
ACPR
(dBc)
2014 16 18 2422
–58
–62
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3500 MHz
26
–34
–38
LTE 20 MHz 3GPP TM1.1 Signal
Single--Carrier W--CDMA 3GPP TM1 Unclipped
22RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION (High Power)
C7
15
R1
C8
ACTIVE BIAS CIRCUIT
VCC1
VBIAS
R3 PDET
C1 C4
C11
6
5
4
3
2
1
R2
C9
16
17
13
14
18
C15
C5
L1C12 C6 C10
L2
VCC2
C13
L3
C14
VCC3
C2 C3
RFOUTPUT
Figure 50. MMZ38333BT1 Test Circuit Schematic
24 23 22 21 20 19
7 8 9 10 11 12
Z1 Z2
Z1: 0.048″ × 0.022″ MicrostripZ2: 0.052″ × 0.022″ Microstrip
L4
L5
RFINPUT
Table 12. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor GJM1555C1H5R6DB01 Murata
C2 1.8 pF Chip Capacitor GJM1555C1H1R8CB01 Murata
C3 0.3 pF Chip Capacitor GJM1555C1HR30BB01 Murata
C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor LL1608--FSL10NJ Toko
L3 3.3 nH Chip Inductor LL1608--FSL3N3S Toko
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 1.1 kΩ, 1/16 W Chip Resistor RC0402FR--07--1K1L Yageo
R2 390 Ω, 1/16 W Chip Resistor RC0402JR--07--390RL Yageo
R3 27 Ω, 1/16 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
MMZ38333BT1
23RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION (High Power)
Figure 51. MMZ38333BT1 Test Circuit Component Layout
R3
C15C11
L1
L5 C1R1
C2 C3
C13
C14C10
C12C7
L4
R2C8
C9
C6
C4
L3
L2
C5
VCC1
VCC2
VDECT
VCC3
QFN 4×4--24HRev. 0
VBIAS (1)
RFIN RFOUT
PCB actual size: 1.30″ × 1.46″.(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
M132638
Table 12. MMZ38333BT1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
C1, C4, C5, C6 5.6 pF Chip Capacitor GJM1555C1H5R6DB01 Murata
C2 1.8 pF Chip Capacitor GJM1555C1H1R8CB01 Murata
C3 0.3 pF Chip Capacitor GJM1555C1HR30BB01 Murata
C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 Murata
C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 Murata
C10 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C14 4.7 μF Chip Capacitor GRM188R60J475KE19 Murata
C15 0.01 μF Chip Capacitor C0603C103J5RAC Kemet
L1, L2 10 nH Chip Inductor LL1608--FSL10NJ Toko
L3 3.3 nH Chip Inductor LL1608--FSL3N3S Toko
L4 2.4 nH Chip Inductor 0402CS--2N4XGL Coilcraft
L5 1.2 nH Chip Inductor 0402CS--1N2XJL Coilcraft
R1 1.1 kΩ, 1/16 W Chip Resistor RC0402FR--07--1K1L Yageo
R2 390 Ω, 1/16 W Chip Resistor RC0402JR--07--390RL Yageo
R3 27 Ω, 1/16 W Chip Resistor ERJ--3GSYJ270 Panasonic
PCB Rogers RO4350B, 0.010″, εr = 3.66 M132638 MTL
(Test Circuit Component Designations and Values table repeated for reference.)
24RF Device Data
NXP Semiconductors
MMZ38333BT1
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION (High Power)
Figure 52. S11 versus Frequency
–5
3500
f, FREQUENCY (MHz)
S11(dB)
3550 3600 3650 3700 3750 3800 3850 3900
–10
–15
–20
–25
–30
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
Figure 53. S21 versus Frequency
f, FREQUENCY (MHz)
S21(dB)
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
3500
42
39
38
37
36
353550 3600 3650 3700 3750 3800 3850 3900
–6
3500 3550 3600 3650 3700 3750 3800 3850 3900
–7
–8
–9
–10
–12
Figure 54. S22 versus Frequency
f, FREQUENCY (MHz)
S22(dB)
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
Figure 55. Stage Collector Current versusOutput Power
Pout, OUTPUT POWER (dBm)
29
I CC,COLLECTORCURRENT(mA)
24 25 3226 27 28 3130
ICC3
Pout, OUTPUT POWER (dBm)
900
800
700
400
600
300
200
500
100
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHz CW
ICC2
0
1000
33
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHz CW
Figure 56. Power Gain versus Output Power
Pout, OUTPUT POWER (dBm)
39
38
37
29
Gps,POWER
GAIN(dB)
24 2532
32
36
26 27 28 3130
40
35
34
33
33 24
P DET,POWER
DETECTOR(V)
14 16 18 20 22 26
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHzLTE 20 MHz 3GPP TM1.1 Signal2.4
2.0
1.6
0.4
1.2
0
0.8
2.8
Pout, OUTPUT POWER (dBm)
Figure 57. Power Detector versus Output Power
41
40
–11 ICC1
MMZ38333BT1
25RF Device DataNXP Semiconductors
50 OHM APPLICATION CIRCUIT: 3600–3800 MHz, 5 VOLT OPERATION (High Power)
–30
ACPR
(dBc)
2414 16 18 20 22 26
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 3700 MHz
LTE 20 MHz 3GPP TM1.1 Signal
Figure 58. ACPR versus Output Power
Pout, OUTPUT POWER (dBm)
–62
–58
–54
–50
–46
–42
–38
–34
Single--Carrier W--CDMA 3GPP TM1 Unclipped
26RF Device Data
NXP Semiconductors
MMZ38333BT1
Figure 59. PCB Pad Layout for 24--Lead QFN 4 × 4
0.50
0.30
3.00 4.40
2.6 × 2.6 solder pad with thermalvia structure. All dimensions in mm.
Figure 60. Product Marking
MA14WLYW
MMZ38333BT1
27RF Device DataNXP Semiconductors
PACKAGE DIMENSIONS
28RF Device Data
NXP Semiconductors
MMZ38333BT1
MMZ38333BT1
29RF Device DataNXP Semiconductors
30RF Device Data
NXP Semiconductors
MMZ38333BT1
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software• .s2p File
Development Tools• Printed Circuit Boards
To Download Resources Specific to a Given Part Number:1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis.In cases where NXP is contractually obligated to perform failure analysis (FA) services, full FA may be performed by thirdparty vendors with moderate success. For updates contact your local NXP Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Jan. 2017 • Initial release of data sheet
MMZ38333BT1
31RF Device DataNXP Semiconductors
How to Reach Us:
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Document Number: MMZ38333BRev. 0, 01/2017
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