3-phase inverter automotive power module · current sensing an ntc for temperature sensing and an...
TRANSCRIPT
©20FT
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
April 2013
®
Auto SPMFTCO3V455A13-Phase Inverter Automotive Power ModuleGeneral DescriptionThe FTCO3V455A1 is a 40V low Rds(on) automotive qualified
Features• 40V-150A 3-phase trench MOSFET inverter bridge
• 1% precision shunt current sensing
• Temperature sensing
• DBC substrate
• 100% lead free and RoHS compliant 2000/53/C directive.
power module featuring a 3-phase MOSFET inverter optimized for 12V battery systems. It includes a precision shunt resistor for current sensing an NTC for temperature sensing and an RC snubber circuit.The module utilizes Fairchild's trench MOSFET technology and it is designed to provide a very compact and high performance variable speed motor drive for applications like electric powersteering, electro-hydraulic power steering, electric water pumps, electric oil pumps. The power module is 100% lead free, RoHSand UL compliant.
Benefits• Low junction-sink thermal resistance
• Compact motor design
• Low inverter electrical resistance
• High current handling
• Highly integrated compact design
• Better EMC and electrical isolation
• Easy and reliable installation • Improved overall system reliability
• UL94V-0 compliant
• Isolation rating of 2500Vrms/min
• Mounting through screws
• Automotive qualified
Applications• Electric and Electro-Hydraulic Power Steering
• Electric Water Pump
• Electric Oil Pump
• Electric Fan
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Symbol Parameter Rating UnitVDS(Q1~Q6) Drain to Source Voltage 40 V
VGS(Q1~Q6) Gate to Source Voltage ±20 V
ID(Q1~Q6) Drain Current Continuous(TC GS = 10V) 150 A
EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ
PD Power dissipation 115 W
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature 125 °C
Figure 1.schematic
Figure 2. package
= 25°C, V
13 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comCO3V455A1 Rev. C2
©2FT
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
Pin Configuration
Pin DescriptionFigure 3.
Pin Number Pin Name Pin Descriptions1 TEMP 1 NTC Thermistor Terminal 12 TEMP 2 NTC Thermistor Terminal 23 PHASE W SENSE Source of HS W and Drain of LS W4 GATE HS W Gate of HS phase W MOSFET5 GATE LS W Gate of LS phase W MOSFET6 PHASE V SENSE Source of HS V and Drain of LS V7 GATE HS V Gate of HS phase V MOSFET8 GATE LS V Gate of LS phase V MOSFET9 PHASE U SENSE Source of HS U and Drain of LS U
10 GATE HS U Gate of HS phase U MOSFET11 VBAT SENSE Drain of HS U, V and W MOSFET12 GATE LS U Gate of LS phase U MOSFET13 SHUNT P Source of LS U, V W MOSFETS / Shunt +14 SHUNT N Negative shunt terminal (shunt -)15 VBAT Positive battery terminal16 GND Negative battery terminal17 PHASE U Motor phase U18 PHASE V Motor phase V19 PHASE W Motor phase W
013 Fairchild Semiconductor Corporation 2 www.fairchildsemi.comCO3V455A1 Rev. C2
©2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.comFTCO3V455A1 Rev. C2
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
Internal Equivalent Circuit
Figure 4.
TEMP 1
TEMP 2
SHUNT N
SHUNT P
GATE HS W
GATE HS V
GATE HS U
VBAT SENSEVBAT
PHASE U
PHASE V
PHASE W
GND
GATE L S U
GATE L S V
GATE LS W
CSR
PHASE1 SENSE
PHASE2 SENSE
PHASE3 SENSE
©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.comFTCO3V455A1 Rev. C2
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
Flammability InformationAll materials present in the power module meet UL flammability rating class 94V-0 or higher.
SolderSolder used is a lead free SnAgCu alloy.
Compliance to RoHS The Power Module is 100% lead free and RoHS compiant with the 2000/53/C directive.
©2013 Fairchild Semiconductor Corporation 5 www.fairchildsemi.comFTCO3V455A1 Rev. C2
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Symbol Parameter Rating UnitVDS(Q1~Q6) Drain to Source Voltage 40 V
VGS(Q1~Q6) Gate to Source Voltage ±20 V
ID(Q1~Q6) Drain Current Continuous(TC = 25°C, VGS = 10V) 150 A
EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ
PD Power dissipation 115 W
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature 125 °C
Thermal Resistance
Symbol Parameter Min. Typ. Max. UnitRthjs Thermal Resis-tance Junction to case, Single Inverter FET, PKG center
(*Note 2)
Q1 Thermal Resistance J -C - 1.3 1.7 °C/W
Q2 Thermal Resistance J -C - 1.3 1.7 °C/W
Q3 Thermal Resistance J -C - 1.3 1.7 °C/W
Q4 Thermal Resistance J -C - 1.2 1.6 °C/W
Q5 Thermal Resistance J -C - 1.2 1.6 °C/W
Q6 Thermal Resistance J -C - 1.2 1.6 °C/W
TJ Maximum Junction Temperature - 175 °C
TS Operating Sink Temperature -40 120 °C
TSTG Storage Temperature -40 125 °C
Notes:.* Note 1 - Starting Tj=25°C,Vds=20V,Ias=64A,L= 480uH. * Note 2 -These values are based on Thermal simulations and PV level measurements. These values assume a single MOSFET is on, and the test condition for referenced temperature is “Package Center”. This means that the DT is measured between the Tj of each MOSFET and the bottom surface temperature immediately under
the thermal media in the center of the package.
©20FT
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Symbol Parameter Test Conditions Min Typ Max Units
BVDSSD-S Breakdown Voltage
(Inverter MOSFETs) VGS=0, ID=250uA 40 - - V
VGSGate to Source Voltage
(Inverter MOSFETs) - -20 - 20 V
VTHThreshold Voltage
(Inverter MOSFETs) VGS=VDS, ID=250uA, Tj=25°C 2.0 2.8 4.0 V
VSD MOSFET Body Diode Forward Voltage VGS=0V, IS=80A, Tj=25°C 0.8 1.28 V
RDS(ON)Q1Inverter High Side MOSFETs Q1
(See *Note3)VGS=10V, ID=80A, Tj=25°C - mΩ
RDS(ON)Q2Inverter High Side MOSFETs Q2
(See *Note3)VGS=10V, ID=80A, Tj=25°C - mΩ
RDS(ON)Q3Inverter High Side MOSFETs Q3
(See *Note3)VGS=10V, ID=80A, Tj=25°C - mΩ
RDS(ON)Q4Inverter Low Side MOSFETs Q4
(See *Note3)VGS=10V, ID=80A, Tj=25°C - mΩ
RDS(ON)Q5Inverter Low Side MOSFETs Q5
(See *Note3)VGS=10V, ID=80A, Tj=25°C - mΩ
RDS(ON)Q6Inverter Low Side MOSFETs Q6
(See *Note3)VGS=10V, ID=80A, Tj=25°C - mΩ
IDSSInverter MOSFETs
(UH,UL,VH,VL,WH,WL)VGS=0V, VDS=32V, Tj=25°C - - 1.0 uA
IGSSInverter MOSFETs
Gate to Source Leakage CurrentVGS=±20V - - ±100 nA
Total loop resistance VLINK(+) - V0 (-) VGS=10V,ID=80A,Tj=25°C - mΩ
Temperature Sense (NTC Thermistor)
Symbol Test Conditions Test Time Min Typ Max UnitsVoltage Current=1mA, Temperature=25°C T=0.5ms 7.5 - 12 V
Current Sense Resistor
Symbol Test Conditions Test Time Min Typ Max Units
Resistance Current Senset resistor current = 80A T=0.5ms 0.46 - 0.53 mΩ
1.15 1.66
1.22 1.73
1.31 1.82
1.36 1.87
1.57 2.08
1.86 2.32
4.69 5.5
* Note 3 - All Mosfets have same die size and Rdson. The different Rdson values listed in the datasheet are due to the different access points available inside the module for Rdson measurement. While the high side MOSFETs (Q1, Q2, Q3) have source sense wire bonds, the low side mosfets (Q4, Q5, Q6) do not have source sense wire bonds, thus resulting in higher Rdson values.
13 Fairchild Semiconductor Corporation 6 www.fairchildsemi.comCO3V455A1 Rev. C2
©2FT
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
Figure 5.
10.1
1
10
100
1000
LB
I D, D
RA
IN C
UR
REN
T (A
)
V
OPERAREALIMITE
4000
Figur
2.00
40
80
120
160PULDUT
VD
I D, D
RA
IN C
UR
REN
T (A
)
Figure 9
30
10
20
30
40
50
r DS(
on),
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E (m
Ω)
Variat
Figure
30
10
20
30
40
50
r DS(
on),
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E (m
Ω)
Varia
Typical Characteristics (Generated using MOSFETs assembled in a TO263 package, for reference purposes only)
Figure 5.
1 10 1000.1
1
10
100
1000
LIMITEDBY PACKAGE
10us
100us
1ms
10ms I D, D
RA
IN C
UR
REN
T (A
)
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)
SINGLE PULSETJ = MAX RATEDTC = 25oC DC
4000
Forward Bias Safe Operating Area
0.01 0.1 1 10 100 10001
10
100
500
STARTING TJ = 150oC
STARTING TJ = 25oC
I AS,
AVA
LAN
CH
E C
UR
REN
T (A
)
tAV, TIME IN AVALANCHE (ms)5000
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)If R = 0
If R ≠ 0tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
2.0 2.5 3.0 3.5 4.0 4.5 5.00
40
80
120
160
TJ = -55oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
VDD = 5V
I D, D
RA
IN C
UR
REN
T (A
)
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
0 1 2 3 40
40
80
120
160I D
, DR
AIN
CU
RR
ENT
(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
VGS = 10VVGS = 5V
VGS = 4.5V
VGS = 3.5V
VGS = 4V
Saturation Characteristics
Figure 9.
3 4 5 6 7 8 9 100
10
20
30
40
50
r DS(
on),
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E (m
Ω)
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
Drain to Source On-Resistance Variation vs Gate to Source Voltage
Figure 10.
-80 -40 0 40 80 120 160 2000.6
0.8
1.0
1.2
1.4
1.6
1.8
TJ, JUNCTION TEMPERATURE(oC)
NO
RM
ALI
ZED
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E
ID = 80AVGS = 10V
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
Normalized Drain to Source On Resistance vs Junction Temperature
013 Fairchild Semiconductor Corporation 7 www.fairchildsemi.comCO3V455A1 Rev. C2
10 100
IMITEDY PACKAGE
10us
100us
1ms
10ms
DS, DRAIN TO SOURCE VOLTAGE (V)
ATION IN THIS MAY BE D BY rDS(on)
SINGLE PULSETJ = MAX RATEDTC = 25oC DC
Forward Bias Safe Operating Area
0.01 0.1 1 10 100 10001
10
100
500
STARTING TJ = 150oC
STARTING TJ = 25oC
I AS,
AVA
LAN
CH
E C
UR
REN
T (A
)
tAV, TIME IN AVALANCHE (ms)5000
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)If R = 0
If R ≠ 0tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515Figure 6. Unclamped Inductive Switching
Capability
e 7.
2.5 3.0 3.5 4.0 4.5 5.0
TJ = -55oC
TJ = 25oC
TJ = 175oC
SE DURATION = 80μsY CYCLE = 0.5% MAX
D = 5V
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
0 1 2 3 40
40
80
120
160
I D, D
RA
IN C
UR
REN
T (A
)
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
VGS = 10VVGS = 5V
VGS = 4.5V
VGS = 3.5V
VGS = 4V
Saturation Characteristics
.
4 5 6 7 8 9 10VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
Drain to Source On-Resistance ion vs Gate to Source Voltage
Figure 10.
-80 -40 0 40 80 120 160 2000.6
0.8
1.0
1.2
1.4
1.6
1.8
TJ, JUNCTION TEMPERATURE(oC)
NO
RM
ALI
ZED
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E
ID = 80AVGS = 10V
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
Normalized Drain to Source On Resistance vs Junction Temperature
9.
4 5 6 7 8 9 10VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
Drain to Source On-Resistance tion vs Gate to Source Voltage
©2013 Fairchild Semiconductor Corporation 8 www.fairchildsemi.comFTCO3V455A1 Rev. C2
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
Typical Characteristics (Generated using MOSFETs assembled in a TO263 package, for reference purposes only)
Figure 5.
1 10 1000.1
1
10
100
1000
LIMITEDBY PACKAGE
10us
100us
1ms
10ms I D, D
RA
IN C
UR
REN
T (A
)
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)
SINGLE PULSETJ = MAX RATEDTC = 25oC DC
4000
Forward Bias Safe Operating Area
0.01 0.1 1 10 100 10001
10
100
500
STARTING TJ = 150oC
STARTING TJ = 25oC
I AS,
AVA
LAN
CH
E C
UR
REN
T (A
)
tAV, TIME IN AVALANCHE (ms)5000
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)If R = 0
If R ≠ 0tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
2.0 2.5 3.0 3.5 4.0 4.5 5.00
40
80
120
160
TJ = -55oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
VDD = 5V
I D, D
RA
IN C
UR
REN
T (A
)
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
0 1 2 3 40
40
80
120
160
I D, D
RA
IN C
UR
REN
T (A
)
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
VGS = 10VVGS = 5V
VGS = 4.5V
VGS = 3.5V
VGS = 4V
Saturation Characteristics
Figure 9.
3 4 5 6 7 8 9 100
10
20
30
40
50
r DS(
on),
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E (m
Ω)
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
Drain to Source On-Resistance Variation vs Gate to Source Voltage
Figure 10.
-80 -40 0 40 80 120 160 2000.6
0.8
1.0
1.2
1.4
1.6
1.8
TJ, JUNCTION TEMPERATURE(oC)
NO
RM
AL I
ZED
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E
ID = 80AVGS = 10V
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
Normalized Drain to Source On Resistance vs Junction Temperature
Figure 9.
3 4 5 6 7 8 9 100
10
20
30
40
50
r DS(
on),
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E (m
Ω)
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μsDUTY CYCLE = 0.5% MAX
Drain to Source On-Resistance Variation vs Gate to Source Voltage
Figure 11.
-80 -40 0 40 80 120 160 2000.4
0.6
0.8
1.0
1.2
NO
RM
ALI
ZED
GA
TE
THR
ESH
OLD
VO
LTA
GE
TJ, JUNCTION TEMPERATURE(oC)
VGS = VDSID = 250μA
Normalized Gate Threshold Voltage vs Junction Temperature
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
-80 -40 0 40 80 120 160 2000.90
0.95
1.00
1.05
1.10
1.15
TJ, JUNCTION TEMPERATURE (oC)
NO
RM
ALI
ZED
DR
AIN
TO
SO
UR
CE
BR
EAK
DO
WN
VO
LTA
GE
ID = 250μA
Figure 13.
0.1 1 10100
1000
10000
f = 1MHzVGS = 0V
Crss
Coss
Ciss
CA
PAC
ITA
NC
E (p
F)
VDS, DRAIN TO SOURCE VOLTAGE (V)50
40000
Capacitance vs Drain to Source Voltage
Figure 14.
0 50 100 150 200 2500
2
4
6
8
10ID = 80A
VDD = 20V
VDD = 15V
VDD = 25V
V GS,
GA
TE T
O S
OU
RC
E VO
LTA
GE(
V)
Qg, GATE CHARGE(nC)
Gate Charge vs Gate to Source Voltage
©2013 Fairchild Semiconductor Corporation 9 www.fairchildsemi.comFTCO3V455A1 Rev. C2
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
Mechanical Characteristics and Ratings
Fig. 15. Flatness Measurement Position
Package Marking and Ordering Information
Parameter ConditionLimits
UnitMin. Typ. Max.
Device Flatness Note Fig.15 0 - +200 um
Weight
Devi FTC Tube 11
1
- - g20
Mounting Torque Mounting Screw: - M3, Recommended 0.7N.m 0.6 0.7 0.8 N.m
QuantityPacking Type
ce Marking MOSFETPCF33478O3V455A1
©2013 Fairchild Semiconductor Corporation 10 www.fairchildsemi.comFTCO3V455A1 Rev. C2
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
Detailed Package Outline Drawings
Figure 16.
VBAT
SEN
SE
GAT
E LS
U
GA
TE
HS
U
PH
AS
E U
SE
NS
E
GAT
E H
S V
PH
AS
E V
SE
NS
E
GA
TE
LS
V
TE
MP
2
TEM
P 1
GAT
E LS
W
GA
TE
HS
W
PH
AS
E W
SE
NS
E
SHUN
T N
SH
UN
T P
VBAT GND PHASE U PHASE V PHASE W
©2013 Fairchild Semiconductor Corporation 11 www.fairchildsemi.comFTCO3V455A1 Rev. C2
FTCO
3V455A1 3-Phase Inverter A
utomotive Pow
er Module
Detailed Package Outline Drawings
Figure 17.
TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is notintended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVERELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANYPRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTYTHEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THEEXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,and (c) whose failure to perform when properly used in accordance withinstructions for use provided in the labeling, can be reasonablyexpected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to causethe failure of the life support device or system, or to affect its safety oreffectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
2Cool™AccuPower™AX-CAP™*BitSiC®
Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®FACT Quiet Series™FACT®
FAST®
FastvCore™FETBench™FlashWriter® *FPS™
F-PFS™FRFET®
Global Power ResourceSM
Green Bridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louderand Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™Motion-SPM™mWSaver™OptoHiT™OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™TinyBuck™TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC®
TriFault Detect™TRUECURRENT®*μSerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of theirparts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplication, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from theproliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized FairchildDistributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized FairchildDistributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range ofup-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address andwarranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild iscommitted to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
Rev. I61
tm®