Code No. 2010FACULTY OF ENGINEERING

B.E. 2/4 (Civil) I-Semester (Suppl) Examination, June 2013Subject : Building Drawing

Time : 3 Hours Max. Marks: 75Note: Answer all questions of Part - A and answer any five questions from Part-B.

PART A (25 Marks)1. Draw the sign convention for brick and concrete. (3)2. Draw the isometric view of queen closer. (2)3. Explain the importance of random rubble masonry. (3)4. Give the standard sizes of doors and windows. (3)5. Draw the elevation of the stone masonry. (3)6. Draw the plan of 1 brick Flemish bond. (3)7. What are the important parameters that are considered in truss drawing? (2)8. Give any two forms of stairs. (2)9. Give the importance of foundation drawing. (2)10. Differentiate between paneled window and glazed window. (2)

PART B (5x10=50 Marks)11. Draw the Isometric view of 1 brick English bond, minimum number

of layers is 8. (10)12. Draw the plan and isometric view of wall junctions for half brick wall. (10)13. Draw the plan and elevation of a Glazed door to a scale of 1 : 50 for

1.2 x 2.1m. (10)14. Draw the plan, elevation and sectional elevation of a paneled window

of size 1.0 x 1.2m. (10)15. Draw the sectional elevation of a R.C.C. slab in both directions of span

6m x 8m and has thickness 125 mm. Sketch the reinforcement details. (10)16. Draw the queen post truss for a span of 15m. (10)17. For the given line diagram develop the plan of residential building. The

thickness of all walls are 300mm. Provide the doors and windows wherevernecessary. (10)

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p

Fig. 1Note : All dimensions are in mm

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kitchen 2500 x 12003500x2800Dining 2500x18003500x2600 p bathroom

as 2500x2400s bedrooma

Bedroom g4500x300 e Living room

4000x3000

Code No. 2016FACULTY OF ENGINEERING

B.E. 2/4 (ECE) I-Semester (Suppl) Examination, June 2013Subject : Electromagnetic Theory

Time : 3 Hours Max. Marks: 75Note: Answer all questions of Part - A and answer any five questions from Part-B.

PART A (25 Marks)1. A point charge Q1=25 c and Q2 = 20 nC are located at (1, -2, 3) & (2, -1, 0)

respectively. Determine the force on Q1 due to Q2. (3)2. State continuity equation. (3)3. Explain what is meant by displacement density. (2)4. State Biot-Savarts law. (3)5. Define self and mutual and inductance. (2)6. Write wave equation in conducting medium. (2)7. Define wavelength, phase velocity. (2)8. A plane y=3m contain a uniform change distribution of density

8210 /16 1s c mT

. Determine E at all point. (3)

9. State pointing Theorem. (2)10. State Brewster angle and critical angle. (3)

PART B (5x10=50 Marks)11.(a) State and prove divergence theorem. (7)

(b) Given the vector field A = 5x2 sin2x ax find divergence A at x = 1. (3)

12.(a) Find the potential and electric field between the two concentric cylinderswhere V=0 and ra = 1mm and V=100 at rb=20 mm. (5)

(b) Obtain the capacitance of spherical shell. (5)13.(a) Show that energy density in a magnetic field is 1/2 BH. (5)

(b) Describe the magnetic flux density. (5)14.(a) Prove E/H = 120 . (7)

(b) Write Maxwell equation in free space and conducting medium. (3)15.(a) Find the reflection and transmission coefficient of an electric field wave

travelling in incident at the surface of perfect dielectric. (7)(b) Define skin depth. (3)

16. Show that F = e-z sin wv (x-wt) satisfies the wave equation 2F= 21 Fc

provided that wave velocity is V=C2 2

1/ 22(1 )Cw

(10)

17.(a) Distinguish between linear, circular and elliptical polarization. (7)(b) State Poisson's equation. (3)

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Code No. 2022FACULTY OF ENGINEERING

B.E. 2/4 (Mech./ Prod. / AE) I-Semester (Suppl) Examination, June 2013Subject : Mechanics of Materials

Time : 3 Hours Max. Marks: 75Note: Answer all questions of Part - A and answer any five questions from Part-B.

PART A (25 Marks)1.

The forces in wise and bar of figure 1 are (3)(a) 282.8, 200.8 N (b) 272.8, 210 N(c) 292.8, 208.8 M (d) None of the above

2. State Mohr's theorems I and II. (3)3. Define moment of resistance. What are its units? (3)4. Derive the expression for core of a rectangular section. (3)5. Draw Mohr's circle of stress for an element subjected to pure shear. (3)6. The property of material which allows of its being drawn out of tension to

smaller section is called. (2)7. State the assumptions made in derivation of torsion equation. (2)8. What is fletched beam? (2)9. Define principal strains. (2)10. Write secant and perry formulae for eccentrically loaded column. (2)

PART B (5x10=50 Marks)11.(a) Sketch the stress-strain curve for mild steel and explain all the salient

points on it. (5)(b) In a tension test on a circular rod of 60 mm diameter and 200 mm gauge

length, the elongation recorded was 0.6 mm. The decrease in diameter wasfound to be 0.22 mm. Calculate the values of the three elastic constants. (5)

12. Construct the 0.022 shear force and bending moment diagram for theoverhanging beam shown in figure 2. (10)

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Code No. 2022..2..

13. Determine slope and deflection, of the beam shown in figure 3, at A and C. (10)

14. For an element shown in figure 4, determine the location of principal planes,calculate principal stresses and maximum shear stress and locate the plane ofmaximum shear stress. (10)

15. Derive the formulae for stresses and strains in thin cylinder. (10)16. The cross section of a simply supported beam of span 6m and subjected

to a well of 10 kN/m over its entire span as shown in figure 5. Sketch the bendingstress distribution across its mid span section. (10)

17. A solid shaft is to transmit 100 KW at 120 rpm. If the shear stress of the materialmust not exceed 80 MPa and the maximum torque is likely to exceed the meanby 25%, find the diameter required. What percentage saving in weight would beobtained if the shaft were replaced by a hollow one whose internal diameterequals 0.6 times external diameter, the length, material and maximum shearstress being same. (5+5)

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Code No. 2025FACULTY OF ENGINEERING

B.E. 2/4 (CSE) I-Semester (Suppl) Examination, June 2013Subject : Data Structures Using C++

Time : 3 Hours Max. Marks: 75Note: Answer all questions of Part - A and answer any five questions from Part-B.

PART A (25 Marks)1. What is an array? (2)2. What is a template? Give syntax for function Template. (3)3. What are the advantages of queues over dequeues? (3)4. What is a stack? Give stack ADT. (3)5. What are the types of Inheritance? (2)6. Define Hashing. (2)7. Write the different Binary tree traversals. (3)8. Define minimum cost spanning tree. (2)9. Define max heap and min heap. (3)10. What is an AVL tree? (2)

PART B (5x10=50 Marks)11. Write a program to implement stack operations in C++ arrays. (10)12. Write a program for polynomial addition in C++. (10)13. Write a C++ program to create, insert and delete from a doubly linked list. (10)14. Write an algorithm for quicksort and explain with an example. (10)15. What is a heap? Construct max heap and min heap with the following list

elements. Show in step wise. (10)8, 15, 1, 19, 16, 4, 25, 12, 23, 20, 17

16. Write an algorithm for insertion and deletion in a binary search tree. (10)17. Write short notes on the following:

(a) Prim's algorithm (4)(b) Circular linked lists (3)(c) Full and complete binary trees (3)

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Code No. 2031FACULTY OF INFORMATICS

B.E. 2/4 (IT) I-Semester (Suppl) Examination, June 2013Subject : Micro Electronics

Time : 3 Hours Max. Marks: 75Note: Answer all questions of Part - A and answer any five questions from Part-B.

PART A (25 Marks)1. Draw the circuit for double clipping. (2)2. Find the reverse saturation current in a diode carrying a current of 3mA,

when the voltage across it is 0.7V (3)3. Draw the circuit symbols of MOSFET and JFET. (2)4. Define the current amplification factors of BJT in CB, CC and CE

configuration. (3)5. List the advantages of negative feedback. (3)6. Define Bark hauser criteria. (2)7. Derive the expression for voltage gain of an op-amp in non-inverting

configuration. (3)8. Draw a circuit for zero-level detection using op-amp. (2)9. Define Noise margin. (2)10. What is threshold voltage of a MOSFET device? How it is depends on the

Transistor channel length? (3)PART B (5x10=50 Marks)

11.(a) Bring out the differences among conductors, insulators and semi-conductors. (6)

(b) What SBD? How is it different from an ordinary PN diode? (4)12. Explain the physical structure and operation of JFET. (10)13.(a) Explain the operation of a crystal oscillator. (5)

(b) Discuss about class-B power amplifier. (5)14.(a) How an op-amp can be used as anti-logarithmetic amplifier. (6)

(b) Discuss about the ideal characteristics of an op-amp. (4)15.(a) Give the rules for building complex logic gates using CMOS logic. (5)

(b) Draw the CMOS implementation of 2-input NAND gate. (5)16.(a) What is a voltage Regulator? How a zener diode act as a voltage regulator? (6)

(b) Derive the expression =/(1+). (4)17. Write short notes on any two of the following: (10)

(a) Negative feedback Topologies(b) Monostable Multi-Vibrator(c) VTC of an Inverter

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