1; - eng.shizuoka.ac.jp · `yonseiun沁ersity-shizuokaun沁ersitystudentsworksh()p2011
TRANSCRIPT
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Yonseiunivl、lrsity-Shizuokaunl、yersity
Studellts’VVorkshop2011
PI’oceedings
D{3cemberyjl2011
Yonseiuniv{:う:17sity,Seou1,Korea
Y`onseiun沁ersity-Shizuokaun沁ersityStudentsWorksh()p2011
1)ecembel‘5,2011(Monday)atYonseiU111versity,lくorea
11
21
19
17
13
SurfacePlasmonResonanceinDeep-UVRegion
Sung‘YongLim,lllyunseokYang,Kyoung-SuPark,No-CheoIPark,and
Young-PilPark(Yonseiuniveristy)
11:25-11:400-06
Storage
KoheiTakamatsu,W.lnami,andY.Kawata(Shizuokauniversity)
CoffeBreak
O-05
TrackingServoミMethodusingPre-patternsforHOlographicData
ObservationofWide-GapSemiconductors
Program
09:(X)-09:30
()9:30-09:45
09:45-10:10
Registration
openingRemark
O-01(lnヽ 4ted)
AutoconfocaITransmissionlVlicroscopyBasedonNonlinear
Detection
ChulminJoo,ChunZhan,QingLi,andlヨ;iavashYazdanfar
(Yonseiuniversity)
10:10-10:250-02
CharacteristicAnalysisofCFRPCuttingwithNanosecondPulsed
Laser
Kdsukeushida,W.lnami,Y.Shimamura,Y.Kawata
(Shizuokauniversity)
10:25-10:400-03
DynamicCharllderisticsPI’edictionofthePerforatedCylindrical
ShelHnSMARTUsingSI1111arityAnalysis ●● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 1 5
Young-lnChoiβeunghoLim,Young-PilPark,No-CheolPark,
Kyoung-SuPark(Yonseiun沁el゙ sity)
10:40-10:550-04
Two-PhotonExcitationwithvisibleFemto鎖慨ondLaserfor
10:55-11:10
11:10-11:25
MasahzuKikawada,A.0no,W.lnami,R』4kimoto,andY.Kawata
(Shizuokaun沁el’sity)
11:40-11:550-07
TribologicaIPropertiesofZnONanowires
HaeJinKim,KyeongHeeKang,andDaeJE皿Kim(Yonseiuniversity)
11:55-12:100-08
CeIIPIlcessingwithElectronBeam
23
●● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 2 5
KenWatanabe,W.lnami,andY.Kawata(Shizuokauniversity)
1:2:10-13:30Lunch
1:3:30-13:450-09
PrecisionlVlachiningofGC鬘old
lVollkyunLee,Kyung-ln,lang,andByung-KwonMin
(Yonseiunivel`sity)
13:45-14:000-10
OpticallyCOI!trollableElectrophoresiswithaPhotoconductive
Substrate
27
29
TaikiNagashima,T.lwahashi,W.lnami,A.Miya㎞wa,andY.Kawata
(Shizuokauniverity)
lzl・:00-14:150-11
FabricationofAntirenectionSurfaceviaNanosphereLithography゙ 3̈1
HaesungPark,KyoungsikKim(Yonseiuniveristy)
1∠1・:15-14:300-12
AnalysisofLightandElectronScatteringinaThinFnmforEXA
OpticaIMkroscope
MasahiroFukuta,W.lnami,A.0no,andY.Kawata
(Shizuokaunivel°sity)
1,・1・:30-14:450-13
lmageRe虻orationMethodforHighResolutionlmageinDigital
HOlographicMicroscope
Do-HyungKim,SungbinJeon,San11’HyukLee,Kyoung’SuPark・
No4:;heoH)ark,HyunseokYangandYoung-PilPark(Yonseiun沁ersity)
33
35
:1∠1・:45-15:000-14
Cllthodelum㎞escencelmagingofMetamcNanostrllctures……………37
1RyujiNoda,S.Fukada,Y.l` rawa,A.0no,W.lnami,D.G.:Xliang,
IE;.Saito,andY.Kawata(Shizuokaun沁ersity)
15:00-15:15ClosingRemark
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Fig.2:(a卜(t))lmagesofafixedratretialissu12rt=cordedwithSi-PDbasedACMandGe-PDbased
linearcl(jtection,resljectively.NotetheirnprovedimallecontrastprovidedbySi-PDbasednonlinear
&tection.(c)-(f)Si-PDbasedACMirnag5ofnxedraにhorokltissueElttissueにfhceand20,40,60
μmbelowthetissuesuface,re5spectively.Vas㎝larstructuresaJld叩itheliumareclearlyvisibleateachdepthwithhighcontrast.Thescalebarrepresents50μm.
亀ecandr(lpetitionrate~50MHz)iscollimated,magnined,andfocusedontothespec】menvla
scatteredlijcollectedl
幽に叩
Foc-OBJ.Theforward斤omthesampleisthenthedetectionobjective
(Det-OBJ)all(1ref1)cusedontoSi-PDwithadiameterof~10μm.TheasponseofSi-PDunderfbcusedilluminationofcontinuous
(CW)andpulsed(PW丿ightat1.55μmwasthenexamined.FortheCWcase,nosignalwasobservedonthe(letector,since1.55μmli1111tenergy(~0.8ev)isbelowtheban(1gap()fSi(~1.12ev).However,PWilluillinationresultedinaremarkablesignE11increasedueton()nlinearabsorption(datanotshown).Weexaminedtheoutputsignalasafunctionoftheinci(1entopticalpowerfk)rthePWcase,andfoundthatthesignalexhibiteda
quadraticdependenceontheincidentopticalpower(~2.01),whichsuggeststwo-photoninducedphotocurrents.
3.ResultsandDiscussion
HavingobservednonlinearresponseofSi-PDtotheemr)1oyedfbmtosecondlaser,theimprovedimagecontrastandrejectionofout-oflfbcusbackgroundbyACMwasassessedbyimagingnxedratretina.Figs.20)and2(b)showth6nlag・5sobtainedwiththeSi-PDbasedn(mlineardetectionand
germaniumPDbasedlineardetection(Ge-PD).砥/hilevascularandmorphologicalstructureswerevisibleinbothim昭es,the
12
()ut41n〕cusba(;1cground哨ection(;apal3111tyinACMrelsultedinamuchhighercontrmand nlore de狙nedmorphologicalin11)rrnation.Wealsoperfi)rmedACMimagingona~80μmthickflxedratchoroidbyscanningthesamplealongtheopticalaxistodemonstratethree-dimensionalimaging(;apability.Therepresentativeimagesatthetissuesurnlceandin~20μmstepsbelowthesurfllceareshowninFigs.4(c-f).Thedistributionofvascularstructuresandepitheliumatdifferentdepthsisclearlyvisible,whilehighimagecontrastismaintained.
4.Summary
Acheapandsimpleschemeforautoconfocaltransmissionmicroscopywasdemonstrated.Theselfalignedvirtual
pinholewasachievedbyasinglelarge-areasiliconphotodiodethatgenerates
photocu汀entsinaquadraticdependenceonincidentintensityof~1.55μmpulsedillumination.High-contrast,depth-resolvedimagesofbiologicaltissuesampleswere
presented。
Reference
田C.Joomj・,0r)t.I-ett.35(57-(55)(2010)
○-02
Char£lderisticanalysisofCFRPcuttingwithnanosecondpulsedlaser
Keisukeushidal*,Watarulnami2’3,YoshinobuShimamural,andYoshimasaKawatal’3
1F11cultyofEngillaring,ShizuokauniversitM2Shizuokauniv.GRL,3JST-CREST
3-5-1Johoku,Naka,Hamamatsu,Shizuoka432-8561,JapanTEL&FAX:+ISI-53-478-1076
E-mail:kawata而e叩.sllizu()ka.ac.ip
Abstract
(JarbonFiberRe凶1)rcedP臨stics(CFRP)hElvefeaturc3sofhighspec姐cstren球h,highrigiditsnghtwe垣ht,etc,Thecuttingtechniquesusedf1)rCFRPtodayarewaterjetcuttingandmechanicalcuttingoperationssuchassawing,mming,o「
grinding.However,theyhaveproblemsofhightool-wear,wastewaterdisposa1,etc.ThesedisadvantageshmittheapplicationsofCFRP.WeperformthecuttingofCFRPwithnanosecondpulsedlaserandanalyzeditschara(lteristics.Weinvestigatedmachining-depthdependencesontheconditionoffocuspositionandtheamountofoverlappingareaof7focusspotonCFRPE3urface.
1.1ntroductiou
CarbonFiberRein拓rcedPlastics(CFRP)ε12(;ompositemateri111(;omposedbycarbonfiberandl)Jticresin.Thefbaturesofthellmterialillcludehighsl)ecificstrerlgth,highriがdity,1ightweight,etc[1].1’herefore,CFRPhavebecomeanessential{lngineeringmaterialinmanymodemindustrialappli(;ations[21.
Themaincuttingte(;11niquesusedfbrCFRPtodayarewaterjetcuttingandm(?(;11anicalcutting()I)c2rationssuchassawing,milling,orgrinding,However,theyhave
problemsofhightoo1-wear,wastewaterdisposa1,etc.Therefore,itisdimculttosaythattheserxocssingmethodsaresimplyandeasyway.ThedisadvantageslimittheElpplicationsofCFRP.
Lasercuttingispaidatterltionsbecauseithasl)otentialssolvingthedisadvantagesofwaterjetcuttingandmt?(;hanicalcutting()r){?rations[31.WepresentlaserprocessingcharE1(;teristicswithnanoscondlaserpulse.
2.CFRPandlasersource
lnthisstudy,981mmthickCFRPwereusedforlaserl)rocessing.Aplywascomposedofunidi祀ctionalnberandresinthathardenfiber.ltwaslam柚ated
FO°/9()゚ /90°/Oo]orielltation.WeusedaQ-switchNd:YAGlaser(wElv・うlength=532nm,pulsewidth=4ns).NumericE11aperture
13
(N.A.)oftheo句(・ctivelenswas0.10.
3.ExperimentalResultandDiscussion
We・1/estigatedlhemachin㎞g-depthdependenceonscanningspeedswithvariousfocusedl)ositions.Thefocuspositionwasvariedintheregionfrom-500μmto500μmandscanningspeedswere0.2μm/s,0.4
μmノs,0.8μm/s,1.6μm/s.Anerlaserirradiations,themachiningdepthandwidthweremeasuredwithscanningelectronmiaoscope(SEM).lntheseexperiments,wescannedlaserlightonlyonce。
FigurelshowsSEMimagesofcrosssectionso臼aserr)r()cessedCFRP.Figure2showstheresultsofthemachining-clel)thdependenceoneachfocuspositionwithvariousscanningspeeds.ltwasfoundthatthemachiningdepthswereinaeasedwiththelargervalueoffbcusedpositions,anddepthswerelimitedatcertainvalues.WhenthefocuspositionwasmovedtotheinsideoftheCFRPsurfacemore,themE1(2hiningdepth(lecreased.Themaximaofmachiningdepthsbecamesmallerwithhillherscanningspeed.
Fig.I.CrosssectionsofprocessedCFRJ).
IH
H
ljl
H
H
一llljlSE
φ02μ❹・
舘0,4μS/S
40,S11Sゝ
●1.61&sz6
◇ Q I ■ ■ ・
◇ ■ 東○
Q A s a △ △ A
○ △ 皿 “ △Q . ■ ● . A
A = ● ● ● ・ ‾■ ● ・
・ -W
- 4 { } に 2 0 0 0 2 Q 0 4 α )
foeuspositioatoale(7RPsurfaa【μm】
ぬ0
Fig。2.Themachiningdepthforeachs(;anning町)eedandfbcusposition。
l入/ealsoanalyzedthemachining-depthdependenceonoverlappingareaoffocusedspotandnumberoflaserscans.Figure3showstheoverlappingconditionoffocusspotonCFRPI;ul’face.lneachcondition,laserbeamwasscannedwiththenumberofl,5,10,20,50,100,200times.lnthese{5xperiments,thefocuspositionwasfixedontheCFRPsulface。
I;` igure4showsthedel)tlndenceofthemachining-depthonthe(;onditionofoverlal)1)ingareaoffocusspotandnumberoflaserscans.ltwasfoundthatthemachiningdepthsbecamelargerasthelll.lmberofscanswereincreased.Themachiningdepthsalsobecamelargerasthesizeofoverlappingareaswa‘eincreased.Wecouldalsol゙ ecognizethatincreasingrateofthemachiningdepthstotheincreasingllumberofbeamscangraduallybecamesmaller.Focusedspotwasslightlydefocusedduringthelaserl:)ro(;essingbecausetheCFR)ヨ)surfllcewasminedbylaserirradiations.Therefore,wemaysaythatmoreemcientprocessingcanbeperlFormedbya(!justingthefocuspositionintointemalsideoneveryscan.
四 回 ・ 咄 sSix箕鯉sval岡
A (涵てぶ 30
B ご 22j
C (互皿Σ) 15
D (遜皿) 7j
Fig。3.Theconditionofthesizeofoverlap
offocusspotonCFIU)surface.
14
四四10070HHH01000
【HmH
mml
50 100
numberonasa・
150
SCanS
200
Fig。4.Thedependenceofthemachiningdepthontheconditionofoverlappingareaoffocusspotandnumberoflaserscans.
4.Conclusion
Weinvestigatedthemachining-depth(kl)endenceons(llnningspeedwithvariousfocusedl)ositions.ltwasfoundthatthe
叫北imumfbcuspositionsexistedineachs(;anningspeedinordertoachievelargemachiningdepths.ltwasfoundthattherewel‘ethresholdofthepowerdensityto
l:)rocess.Wealsoanalyzedthemachining-depth
del)tlndenceonovel°lappingareaoffocusedspotandnumber()flasgscans.ltwasfoundthatthemachining(lepthsalsobecamelargerasthesizeofover≒)pingareaswerei11(;reased.Wecouldalsol・gognizethathlcreaingrateof.themachiningdepthstotheincreasingnumberofbeamscans
graduallybecamesmaller.Asnextresearchissuesweshould
discusstheoptimumpl’ocessingconditionsfordecreasingl:)rocesstime.Heatefbctsinducedbylaserill皿linationonCFRPshouldbeanalyzedforfinelaserprocessing。
References
[1]K.Tohgo,UCHIDAROKAKUH0,2004[2]DirkHerzog,PeterJaeschke,011ver
Meier,HeinzHafel’kamp,“lnvestigationsonthethermaleffectcausedbylasercuttingwithrespecttostaticstrengthofCFRP”,lntemationaoournalofMachine’R)ols&Manufilcture48,2008,pp・
1464-1473.
[3]K.C.’ゝ 1m11,S.M.Md,T.M.Yue,”Astudyoftheheat4ffbctedzoneintheUVYAGlaserdrillingofGFRPmaterials”,JournalofMaterialsR・ocessinglechnologyl22,20021):278-285
○-03
DynamicChilracl:eristicsPI°edictionofthePerforatedCyl㎞{lricaIShellinSIART
UsingSilllilarityAnalysis
Young-lnChoiβeunghoLim,Young-PilPark,l` Jヽo-CheoH)arlc,Kyoung-SuPark゙
DepartmentofMechanicalEngilleerin9,Yonseiuniversity50Yonsei-『0,Seodaemun-9u,SeouS/120-749,KOrea
TEL&FAX:+82-2123-3847*e-mail:pks6348@yonsei.ac.k「
Abstract
Thispaperintroducesdynamicchal゙ 11cteristicidentifi(;ationofraKtorintemalsusingfiniteelementmethod.Theresearchalsoconsklersnuid-strtl(;tureinl:11ractionbetween(;oolantwaterandl・eactorintemals.Thel’esultsareverifiedbycomparingtheresultsofthemodaltest.lnaddition,thispaperintroducessimilarityanalysisusinglsJAVMlfilctor.Fromthisfactor,(妙namiccharElcteristicsofsubmergedstructureswhichhavediarents(;alefa(;torcanbepl’{idicted.
1.1ntroductionNowKoreanAtomicEnergyResearch
lnstituteisdevelopingtheSystem-integratedModularAdvancedReacTor(SMART).TheSMARrrincludescomponentslikeac()re,steam
gentlrators,coolantpumps,andapressurizerinsidetheonel’tlactorvtlssel.Thoughtheintegratedstillctureimprovesthesafbtyofther{lactor,itcanbeexcitedby飢earthquakeand
pumppulsations.ltisimportanttoidentifyd)rnamiccharacteristicsofthereactorintemalsconsi(leringfluid-structurekaaction.Thus,modalanalysiswiththemodaltestandthefinite・slementmethod(FEM)iり)erformedinordertoidaltifythed)rnamiccllaracteristicsofthereact()rintemals。Thenowskirt,whichisaperfbrated
(;ylindri(;alshelljslocatedinthelowerplenum()fthel’tlElctor.lnordertopelfomlthemodaltest,al/12sizes(;ale-simnaritymodelismanuf11(;turedandfiniteelementmodelisconstnlctedbasedonthisscale-simhritymodel.ThedynamiccharacteristicsofthesimilaritymodelareextractedbythemodaltestandFEmodelisverifiedbycomparingtheresultbetweenthemodaltestandtheFEanalysis.Thisstudy血rthercarriesoutthesimilarityanalysisforplでdictingthedynamiccharacteristicsofthereall‘eacta’intemals.Thellaturalfi’11(:111enciesoftherealreactorintemalsarecalculatedwiththeNj4VMlfactorandcalibratingfactors.Results
ofthesilnilarityanalysisareverifledbycompal゙ ingthelresultsoftheFEanalysis。
2.FiniteElement】VlodelThenowskirthastota11668holeswhichhaveatriangularpattem.ltis面曇ゑorcedbythreecircularribsontheinsideoftheshen.Sixlowernangesislocatedinthelowerpartofthenowskirtandtheyarefixedtohemisphericalsurfllceofthel・tlactorvessel.Afiniteelementmodelofal/12gale-simhritymodelisbuiltupandthefiniteelementanalysisisimplementedbyusingcolmnercialpackage,ANSYS.I;`igurelmustratesthefiniteelementmodelofthenowskirtandsurr()undingnuidswhichisappliedboundaryconditi()nsandthefluid-structureinttiraction.
3.SimilarityAnalysisltisimpossibletopedormthemodaltest
withlargescalestl’1.1ctl,1reslikethel’eactolジrhus,simnarityanalysisisusedforpl’edictingllaturalfi‘(1(luerlciesoftherealra1(;torintemalsfi’omthesimilaritymodel.Kwak[I]isexpressedtheinnuenceoftheaddedmasseflFbctbythel4AVMI(Non-dimensionalAddedⅥrtualMasslncremental)factor.Natl.u` alfi゙ equenciesofthesubmergedreaII’eactorintemalscanbecalculated丘omthenaturalfi゙ equenciesofthes(;ale-simhritymodelintheairbyusingtheNAVMlfactor.
15
ailn , 。 w
5aw●S。。.t
Fig.IFEMModelofFlowSkirt
Table1SmHalityanalysisofnowskirtwithNAVMlfactor
Mode
1-
2-
3
1/12ScaleSimilarityModelofFlowSkirt
Aluminum(air)Aluminum(Water)
F E M F E M
988,1-
1097-
1974
757
789.3-
1402
NAVMIFactor
1.90-
2.52-
2.65
Fig.2explainsl)rocessofthesinlilarityEmalysis.Andnextequationshowsnatural介ci(lでlenciesofthesubmergedrealmodel.
几,一
一
た一
八J 匹宍 (1)
3.ResultsandDiscussionTablelshowsresultsofthesimilarityanalysis.NAVMlfactorisobtainedbythenaturalfyquenciesofthegale-similaritymode1.FromNAVIVIlfhctor,natura1丘t2cltlenciesoftherealsizemodelofthenowskirtinthewaterare(j111clllated.The(;ε11(;ulatedresultsarewe11matchedwiththeresultsoftheFEanalysis.
4.Conclusionlnthismsearch,dynamicchEll7acteristicsofthenowskirtinthereactorareextraetedbythenniteelementan211ysis.Furthermore,similarityanalysisiscarriedoutwiththeconstructedfiniteelementmodel.TheNAVINIlfactorisusedforcalculatingthe
ExtxtngualSquax;iesofSia山4mjlaritymodelinblifatxiwttg
Dcmi卜.Ela5ticModulusCalibriltionFactor
Cak4at。stualfi。qussi。。「牡x認alslctgin扮malsi皿t奴血
Nazllfiqll凹riaoftheraj
s●cこori11加malsindllwltg
Fig.2ProcessoSimilantyAnalysis
Stee1(Air)-
Calculation
82.34-
91.41-
164.5
RealSizeModelofFlowSkirt
Steel(Water)
Calculation
76.85-
78.63-
142.62
F E M-
76.8-
78.8
141.3
Error(%)
0.06-
・0.21
-
0.94
naturalfrequenciesoftherealsizemo(1elandtheseresultscomparewiththeresultsoftheFEanalysis.Theresultsshowvalidityofthesimilarityanalysis.
Reference
(1)M.K.KwakandK.C.Kim,1991,“AxisymmetricvibrationofCircularPlatesinContactwithFluid,”Joumal
()fSoundandvibration,146(3),pp.381-389
Calcula加NAVMIFa£tor
16
○-04
Two-PhotonExcitationwithvisibleFemtosecondLaserforobservationofWide-GapSemiconductors
Kohei’akamatsul,W11tarulnalrli2’3,YoshimasaKawatal’3
1FacultyofEnllineering,Shizuokauniversity,2Shizuokauniv.GRL,3JST-CREST
3-5-IJohoku,Naka,111mamatsu,Shizuoka43:2-8561,JapanTEL&FAX:+81-53478-1076
E-mail:kawata(lna.shizuoka.ac.‘
Abstract
Wehavedevelopedatechniqueoftwo-photonex(;itationinvisibleregion,andappliedtoobserveintemaldefectsofZnOcrystalwhichemitsphotoluminescenceinultravioletregion
(36’7nm).lnordertoobserveaZnOcrystal,weintroduced521nmSHGfbmtosecondsolid-statelasel’[1,2]asalightsource
1.1ntroduction
Semiconductorlasersinultravioletregionhavebeendevelopedbymanyresearchers.Stl・1.1cturedefectsinthesemi-con血ctorcrystalda;reasetheemissionemciencyofthedevices.lnordertoimprovethedeviceemciency,itisrequiredtoreducethestrljl(;turedefectsinacrystalasmuchas
l:)()ssibleinthestageofthecrystalgrowth.T11erefbre,11valuationofacrystalbecomesindispensable.
Two-photonexcitationmicroscopeisusedforevaluationofasemiconductorcrystal,andTi:Sapphirelaserisusedasaex(;nationlightsource.Sincewavelengthregi()11oftypicalTi:Sal)1)hirelaseris’7::20-900nm,wide-gapsemiconductors(;annotbeexcitedwithtwoi)hotonpl` ocess.lnordertoobserveasemiconductorcrystalwithawiderbandgap,weintroducedaSHGfbmtosec()ndsond-statelaserasanexcitationnghtsource.Weobservel(lintemaldefectsofZnocrystals.
:1’17wo-photonex{litationforevaluationofacrystal
Theabsorptionofatypicalsemi-coductorcrystalinthewavelengthregionthatisshorterthanthewavelengthλbg,whichcorrespondstoband-gapenergyofthematerial.Sincetheexcitationwavelengthshollldbeshorterthanthewavelengthλb8,theex(;il:ationlightismuchabsorbedinthematerial.F4urelshowscomparisonof{5x(;itationregionbetweeningle-and
two-photonexcitation.lnasingle-photonexcitation,theexcitationlightcannot
penetrateintodeepareaofthematerial,becauseitabsorbedduringthepropagation.Thislimitstheusageofphotohlmintlscencestudiesinthree-dimensionalobservation。
Two-photonexcitationwillallowthree-dimensionalimagingofthecrystalsbecausethewavelengthusedintwo-photonexcitationismuchlongerthanthewavelengthλbg・Photoluminescenceisexcitedonlyinthefocalvolumeintwo-photonexcitation.Thusobservationofthel)articularpositioninsideacrystalispossible.
Laserlight
/
```‾’゛゛‾‾‾‾‾’゜‘ぺLens``’`「‾`‾’‾’ ’ ’ ’‾ ’ ’ ‘‾‾″゛ノ
ニ J ヨ 1 c i t a t i o n r e g i o ぞ` ` ` - シ 帽 j
’ S e m i c o n d u c t o r j
Single-photon’I`w()-photonexcitationexcitation
I゙ igurel.Comparisonofexcitationregion
3.0bservationofinternaldefectsinZnocrysta
Figure2showstheeM)erimentalsetupof
17
two-pholonQccitationmkr〔〕scope.ASHGfemtoseconds()1id-statelaser(pulsewidth:350R,repetition:2.85GHz)isusedasa(3)(citationlightsource,andscannedthroughthesampleareausinggalvanometermirrors。
lnthisresearch,wechooseZnocrystalasasampleforobservation.BandgapofZnOis3.37evandwavelengthseqtl沁alenttothisbandgapenergyis368.9nm。
Figure3showsresultsofobservationofZnO(;rystaltothedepthof10μminside.Weu刄,hievedthreedimensionalimagingofZno(;rystal,whichemitslumirlescenceinanultravioletregion.Theexcitationregionislimitednearthefbcalpointbytwo-photon
processes,andwecouldalsoobservetheoutline()fintemaldefbctsofacrystal。
Figure4showscomparisonofcross-stl(;tionalpromeofthemarkedpositioninFig.3.1naportionwithalowqualitycrystal,adecreaseinlurninotlsemciencyo(;curs.ltisthoughtofasanintemaldefbctexistsinthe
portionwhichislowintensitycomparedtothecrystalsurface.
Samplc
皿 -
()iectiveL4ns
NA0.85,x40
ロ コPMT
Bcam
Expandcr
I . 1 1 1
/S110rl-PassFiltcr
(~450nm)
NDFiher
SHGFcmtosccondS()lid・StateLjscr
λ=521nm
Galvanometer
Mirror
ム こ
λ に
Figure3.ResultorlheobservationofZno
吊m叩m 1叩m
Fjgure2.Thee)cperimenlalsctupoflwo-
photonexcitationrTlk;roscope
||
Dichroic
Mirror
18
1.2
1一
回0.8a一IUn
0.6
0.4
0.2
0
}ノ 溥 幕 矢
ジ ー 六 大
- O F l m
一一-10μm
0 5 1 0
Length[μm]
Figure4.Comparisonofcross-sectionalproflle
4.Colclusion
Weintroduced521nmSHGfemtoseconds()lid-statelaserfbr(3xcitationlightsource,andachievedthreedimensionalobservationofZnocrystalwhichemitslightinultravioletregion.Wearetrytoextendourtechniquetoobserveotherwidegapsemiconductors,suchasGaNandSiC.Wealsotrytilleうtspectralinfbrmationinordertoi(lentifythedefbctsorigins..
Reference
川S,Yamazoeeta1・,0皿Lett.,vo1.35,N0.5,plλ748-750,2010.
[2]T.Kasamatsuetal・,IWHM&D2009paper4F-1
○-05
’7『rackingServoMethodusingPre-patternsforHOlographicDataStorage
Sun11-YongLim,Hyunse()kYang゙ ,Kyoung-SuPark,No-CheolPark,andYoung-Pi1Park
D111)EIrtmentofMechanicalEngineerinlyyonseiuniv・,262Seorlgsanno,Se()daemun-Gu,Seoul,KoreaTEL&FAX:+82-2-2123-2824*e-mail:11町ang@yonsliLac.k「
Abstract
IF゙ age-orientedholographicdata就()rage(HDS)isverysnsitivetothedistul` banceswhichllffectthepositionofthergordingmedia.7rherefore,morer)recisetrackingservoisl` equiredfol’1’!1(;ordingprocessanditisalsoessentialforhighdensiりぐrherefore,comμ11sationmethodwhichisesentialforthel’ecordingprocessisneededinHDS.lnthispaper,wesu霜曇stsome
pre-pattemfortrackingservoinl’ecordin1四宍)cess.ThismethodwasmotivatedbythetrackingservomethodinHardDiskDrive.Fordesigningthepattemshape,HDS(;hal’actel゙ isticswere(l{}nsidered.Secondly,thetrackerr()1゙ signalswereanalyzed.Lastly,intervalsofthepre-pattemscollsideringtracktolerancewere(kermined.
1.1ntroduction
Pag11-orientedHolographicDataStorage
(HDS)isoneofthemostpromisingcandidatesfornext-容nerationst()ragesl:)e(;lluseofhighdensity,highdatatransfbrrateandshortaccesstime.ltslargeMorage(;ε11)acityisachievedbymukiplexingscheme.Theifilstdatatransferratecanbel・ealizedfi` omitsstorageinpag{lunits.Theone-pageunitcanincludemorethanonemillionbits,sothedatatransfbrratecanbefllsterthanconv(・ntionalopticalDiscDrive(ODD)[1].However,theconventionaloff・axisHDShassomedisadvantagesofconstructingtrackingservomechanismsystemjnlerefore,variouscompensationmethodsconsideredfortheHDScharacteristicshavebeenproposed.Thepreviousresearchesforde-trackcompensationhavelimitationsothattheyareonlyavailableforretrievalprocess.’I’herefore,wesuggestsomepre-pattemfor
trackingservoinl’ecordingl:)rocess.Themethodl)1゛()posedinthis芦perwasmotivatedbythet警kingservomethodinHardDiskDrive(HDD).lndecision
pa` ametersforproposedmethod,resultsf1°omtoleranceanalysisbyl㎡)haseCooperatewerereferred[2].
2.Pre-patternsDesign
Theeccentricityofthedisccanbe
19
regardedasam耐oreflbctformthetrackerrorinth{1ミl-H:}S.0thersde-tracksourceslikedeviationandunbalanceofdisccannotllffecttrackerror.Because,readingandre(;ordingl)1°ocessesareconductedwithstop-gorotationmechanism。
Typicalsizeoffocusedservobeamfortrackingservoisinafbwμz71units.lnsimulations,focusedbeamsizeis2.75μ扉.However,theHDSdischasmuchbiggertrackpitchthanfocusedservobeamspotbecausesizeofmultiplexedhololgramspot(kerminedbypolytopicfilterisabout600芦77.Tosolvethisproblem,discformattingandproposedpattemsdesigningwillbemadeasfollowingprocedure.Firstofall,datazoneandservopattemsareplacedinthedisc,assllowninFig.1(a).Datatracksareincludedinthedatazone.Thedatabetweenservopattemsisl゛ecordedsequentiany.Thedataovell‘lapisavailableduetopolytopicmultiplexing[31,asshowninFig.1(b).Adiagonalpattemislocatedbetweentwostraightpattems,asshowninFig.1(c).PMtemsmustbeabletol‘decttheincidentbeam。
1`heTrackErrorSignal(TES)is
1111neratedbytimedmFclrenceamongthethreerenectedbeamsn゙ omthepre-pattems.Afterdiscisinsertedoverataperedspindle,thediscisrotatedwithaconstantspeeduntildetectingoneTESsignalsset.AlthoughservobeamspotissignificantlysmaUerthan
thetrackpitch,linearTEScanbegerleratedbyusingμ’oposemethod.lnotherwords,thismethodh4sTESrangewhichcancoverthetrackpitch.Therenectedservobeams丘omthel:)attemsgneratetheTES,asshowninFig.2.Whenservobearncrossesthepattems,A,R,B,I:)eakstimesoftherenectedbeamsarel‘el)resentedas7:,/ら,7;.TESislleneratedaccordingtoEq.1。
:ZE;S’=(7;,-7;,)-(7;べ,)(1)
QuantifledTESduetotheslountofeccentricityandl’otationangleofdiscisanalyzed.Firstofan,parEmletersforanalysis,whereeisamountofde-track,δisamountofe(;centricity,り,isdistancefi’omcenterofsl)indletooriginalbeamspot,Qisdistancefi・omcenterofec(;entricitydisctorotatedbeElmspot,andr’isdiぬmcef1°omcenterofe・c(;entricitydisctorol:atedbeamspotandθisanglebetweenQandら・
Basedonthesepllal’neters,de-trackcanbい¥rittenasEq.2.Beanlspotisonthediscwhichisらfi’omcenterofspindlesothatthe
l)roperdatarecordingandretrievalprocessispossible.Howeveらafterthediscisr()tatedinθforotherdata,distancebetweenspindleandbeamspotischangedasr’,asshowninFig.3.Therefore,ドーらlcanbedefinedasde-track.
川一ド=e
(y’=(Qcosθ+δ)2+(Qsiilθ)2,Q=らーダ)(2)
ThroughtheEq.2,itiscertainthat
l:sroperintervalangleofservotrackis∂=30・withδ=100z,。{lccentricityand25zj摺de-tracktokrance.
tzldg
㈲
Fig.IProposedpre’patternanddiscformatting
20
s-
・/
A-
-/--/-
aボis&r.7177、
i ’
a
M H( C ) I S 、
Fig.2TESduetodirectionofthetrackerrorS
Θce幽afsiizde
@g:;,血z・recceiiyifitydiz
@8eagt
I;` i11.3Analy818ofTESduetorotationofdiscwitheccentricity
3.Conclusion
lnthispaper,anadaptivede-trackcompensationmethodforconventionalofモf:・axisHDSwasproposed.Thismethodhasanadvant顎啓thatitcanbeappliedtore(;ordingl)n:)cessdUfel’㎝tly丘ompreviousl゙ {lseal’ches.Therefore,thehighqualitydata
pagescanbereconstructed.Throughtheanalysisandsimulation,theproposedde-trackcompensationmethodwasverifiedthatitisenoughtocompensatede-track.
Reference
田Cou匍I・I.J・,PsaltisD.j;incerboxGT・,HolographicDataStorage,HclM{11berg,Germany(Springt・10000).
[2]AlanHoskins,BradSisson,FrisoSchlottau,EdelineFotheringham,KevinCurtis,“Tole17ancesofaPage-BasedHolographicDataStorageSystem”Proc.ofSPIEVol.6620.
[3]Ken勣ldersonandKevinCurtis,“POlytopicmultiplexing”,0PTICS
LETTERSハ4)1.29,N0.12/2004.
○-06
SurfacePlasmonResonanceinDeep-UVRegion
MasakazuKikawadal,AtsushiOno2・3,Wataru弛ami2・3,RentaroAkimotol,andM)shimasaKawatal・3*
lacultyofEnがneering,S111zuokauniversity,2Shizuokauniv.{:iRL・,3JST・CREST3-5-1Johoku,Naka,}{厦namatsu,Shizuoka432-8561,Japan
TEL&FAX:+8卜53-478-1076E-mail:kawataen.hiloka.゛
Abstract
WedemonMratedthesrfaceplasmonresollance(SPR)withde9-ultra-violet(Dt・q)-UV)region.WefoundthataluminumisgoodmaterialtoexciteSPRwithDeep-UVlightbycalculationsonrenectanceusingfiesnelequation.WealsodemonstratedtheexcitationofSPRinDeel)-UVregion.
1.1ntroduction
Therearemanystudiesonsurfilceplasmonresonance(SPR)anditsapplkationshavebeendevelopedinvariousl’ields[1].SPRhasmanyadvantages,suchasenhancementofdectricfieldinl:ensity,highsn血ivitytore丘activeindexchangeofsamplenearthemetalmr17ace.lnmanystudiesandlll)plicationsofSPR,visibleornear-infraredlightsourcehaveusedforex(;itationofSPR,1:)ecausegoldandsilverhaveverygood
propertiesinthatwavelengthregion.Fewstudieshavebeenl` eportedonthe{lx(;itationofSPRusingDeep-UVlight.Wel)resenttoexcitesurfilceplasmonusing
Deep-IJVlight.Deep-UVlighthashigher
photonenergythanthatofvisiblelight,soSPRwithDeep-UVlightopensmanyapplicationssuchasenhancementfluorescenceexcitation,nuorescentobservationofthenon-labeledbiologicalspecimens.lnthispaper,wedemonstratetheexcitationofSPRwithDeep-UVlight。
2.PI‘incipletoexciteSPR
WeexplaintheprincipleofSPR.Surface
plasmoncanbeexcitedwithaevanescentlightsatisfyingthedispersionrelationship・M41enwavenumbervectoroflongitudinalwaveandwavenumbervectorofpolarization
paralleltoincidenceplane.Becausedistributionofthef1・eeelectroninmetalcondensesparalleHnmrface.Equation(1)showsthepropagationconstantoflrfaceplasmon.
21
KspニぞへRI?i?iJE(1)
=糾疏既:侑廳脂配随?j皆i‾cRe【Em】+Esc匹’豆i∃i同JI
where(1)istheangularfi’equencyofsllrfllce
plasmon,ssisthedielectricconstantoftheぷelectricmaterials,andsmisthecomplexdiel{lctricconstantofthemetal,Here,imaginarypartofsmrepresentsdecayofsurfllceplasmon.lnordertoexciteSPR,weneedametalwithnegativerealpartandsmallimaginarydielectricconstant.I;゙ igurelshowsreall)artandimaがnarypartofthecomplexdielectricconstantofgold(a)andElhninum(b).
ml Hこ
‘.唖●
掴
Wivがen9廿1【nmlx x 3 a 晦 幽 泗 聊
Wiv嚇呵吋刈
71
Fig.1.Complexdielectricconstantofvariousmetals(a)Gold(b)A111minum
Asshowninfigl(a),complexdielectricconstantofgoldhaspositiverealpartandlargeimallillarypartinDeep-UVregion.IVhilecomplexdielectricconstantofaluminumhasan響啓tiverealpartandsma111maginaryl:)artandsatisfiestheconditionsofSPRexcitationinDeep-UVregion.
3.ExcitationSPRinDeep-UVregion
Wecalculatedrenectancefor31ayersmodelusingFresnelequations.171gure2(a)showsrenectancedependenceontheincidentangle.TheresultofAlshowsthattherenectancedecreasesapproximatelyoattheangleof45.4degrees.Atthiimgle,incidentlightcoupleswithf1’eeelectroninmetal,incidentphotonexcitesSPRandthephotonenergyistransfbrredtothesrfllceplasmon.0ntheotherhands,theresultatAushowtherenectancedtl(;reasesgraduanyfi’omtheangleof42degreesinDeep-IJVregion.HoweverthiscurveofAudoesnothavesharpdipandtotalrenectionhasnothappened.SOSPRcan゙ tbeexcitedwithAuinDeel)-UVregion。I;’igure3showsexperimentalprocedure
andourexperimentalsetuptomeasurerena;tarlce.ThemethodtocreatethethinAImmisvacuunleval)orationanditscontrolledthicknessis21.4nm.ThisthicknesswasdeterminedbycalculationatoptimumthicknesstoexciteSPR.TheprismwiththinAlfilmsetontherotationstagaWe(;ollectedthesedatawithchangingincidentangletoboundaryblltweenprismandmetal.Wemeasuredthereflectancewiththe
l)hotodiode。I;’igure2(b)showsexperimenl;a11゙ esultsofl゙ tlflectancewithl)-polarizedlightsource.Wefk)undthattherene(;tedintensityd11(;reasesattheangleof55degrees.ThisresultsthatSPRcanbeexcitedonsurfaceofAI.M41enwecompareexperimentalresultwithcalculation,wecouldalsol’e(;()gnizethatangleofdipwasshiftedincomparisonwithcalculationresultshowninFig.2.Theshiftiscausedby
producedoxidizationofAlsurfaceproduced.Weneedtoevaluatel;hicknessofoxidizationofAhurface.
4.Conclusion
WedemonstratedthatAlisagoodmaterialtoexcitesurfilceplasmonwithDUVlight.Experimentalresultsshowtheex(;itationofSPR.Asaresult,renectedintensitydtl(;reasesattheangleof55degrees.WedemonstratedSPRex(;itationinD{1叩-UVregion.WethinkthatDeep-UV;・SPRhasuniqueapplicationforvariousfields.
22
11
l
Mmla
11
1 t 1 M
@Q’‘SQq』`Q″・
”Z。,6.。,。ぶ。gl609,。:;,。,。。4,こ1’゜
加萎。2.Experimentalllesult:(a)Cal(3ulationsfor31ayerswithconsiderationofAlandAu.
Refi・activeindexofAI,Au,and{lxcitation
wavelengthare馬l°0.16+2.6::!い7all°1.38+1.80i,
and266nmrespectively.(b)Experimental
resultofthicknessthat21。4nmAlfilmat266
nmwavelength.
Fig.3.Experimentalsetup.De叩-UVLaser
ヽvavdength266nm,AHilm21.4nm,
Reference
[1]KeikoTawa,[Flil‘onobuHori,KenjiKintaka,KazuyukiKiyosuらYoshirolatsu,andJ呵iNishiiθj:’77CS’£λ7)j?Zi;;SS9781(2008ハ/ol.16・,N0.13.
○-07
TribologicalPropertiesofZnONanowiresHaeJinKim,KyeongHeeKang,andDae-EunKim*
DepartmentofMechanicalEngineering,Yonseiuniversity,50Yonsei-ro,Seodaemun-gu,Seou□20-749,Korea
TEL&FAX:+82-2-2123-7424e゙-mail:kimde④yons❼.ac.kr
Abstract
Znonanowireshavereceivedmuchinterestoverthepastyearsduetotheiruniquestructureandpieizoelectricbehavior.lnmanyappli(;ationsofZnOnanowires,thetrib()I()gical
propertiesofthenanowiresneedtobeclearlyunderstood.lnthisl)asentationthetrit)ological(;1121racteristicsofverticallygTownZnonanowiresstudiedundervarious(;onditionsarereviewed.Particularly,thefHctionalb{2haviorandwearcharacteristicsoftheZnonanowiresare(jscussed.Theresultsr)2sentedare(3xpectedtoaidinimprovingthedurabmtyofZnonanowires.
1.1ntroduction
CoatingshavebeenwidelyeixploitedtoattainsuperiorfiictionandwearpmpertiesofvariouscomponentsandcontinuedefTortsarebeingmadetogainbetterunderstandingofthektribologic111behaviors.
0verthepastyears,muchworkhasbeendonetodevelopnanowiresof(linirentmatclrialsfornumerousengineeringapl)Hcations.Nanowiresareiterestingmaterialsowingtotheiruniquestructureandsize(1-31.
1nl)Rviousworks,thecontactdamage(;11ε1racteristicsofZnOnanowiresgrownverticallyonasiliconsubstratewereinvestigated[41.TheliictionalbehaviorunderdifTerentscalesofloadwasinvestigatedbyperfbrmingcontactslidingexperiments[51。
2.Experiment
ThemorphologyofZnonanowiresdependsontheprocessingcondition.Znonanowiresinthisstudyweremadebytwodif秘rentmethods,anaqueoussolutionmethodE6]andmetalorganicchemicalvapordel)osition(MOCVD)method.lnFig・1,theSEMimageofatypicaIZnonanowirespecimensynthesizedbytheaqueoussolutionmethodisshown。
Contactslidingtestswereperfbrlnedunderdinbrentloads.TheweartrackwasobservedtocharacterizethecontactdamageofZnonanowiresforeachload.
23
Fig.1SEMimagesofZnonllnowires(a)evenlycoatedonSiwafbrand(b),(c)at
higherrllagnification
3.ResultsandDiscussion
ThecontactslidingtestswereconductedusingtheZnonanowirespecimensundervariousloadswhileobtainingthefyictionalfbrce.lnmi(;m-scale,the削ctioncoemcientwasabout0.35fordinlrentappliedloadsthrou帥outtheentireslidingcycles.UnderthelownormE111oad,thewearrateofZnonanowirescouldbequantifiedbycalculatingthevolumediffiごrenceofthecolltacting
parts。
4.Conclusion
lnthisresearchthecontactdamage
(;11EIracteristicsandf1・ictionalbehaviorof
ZnonanowireswereinveMigated.Basedon
thel゙ esults,tribologicaldaract❶sticsandfailuremechanismofZnOnanowireswereassessed.
Acknowledgement
ThisworkwassupportedbytheNationalResearchFoundationofKorea(NRF)grantfi,1ndedbytheKoreagovemment(MEST).(No.2011-(珀()0409)
Reference
[1]X.S11eng,Q.Yong,X.Chen,WYaguang,YIRusenandW.ZhongLin・“Selflpowerednanowiredevices”,Nat.
Nalotechnol・,5(2010):ES66-373.
[2]L.IL,i-’Yil,S.Ji-Min,J.Min-Chang,K.Kyung-Jin,K.Dae-Eun,M.Jae゛Min,“Wearrateofve函canygrownZno
nanOI¥1reS slidingagainststeelmicro-sphere”,Mater.Sci.Eng.A4truct.
Mater.Prop.Micl’ostruct.1ヨ)1’ocess・,jl{iO-461(2007):ES’70-376.
[3]H.W()()ng-KtS;.Junglnn,H.Dae-Kue,K.Soon-Shin,J.Gunho,S.Sunghoon,K.Seong-Min,K.Hang-Ju,RSeong-Ju,W.MarkE.,andL.’:lllkhee,“TunableElectronic’I` ransportCharacteristicsofl;11rfllceArchkecture-ContronedZnoNanowireFieldEflFbctTransistors”,Nanol..ett・,8(20011)950-956.
[4]K.KyeongHee,K.HaeJin,andK.Dae-Eun,“CharacteristicsofProgressiveDam聊啓ofZnONanowiresduringContactSlidingunderRelativelyLowLoads“,J.ofNanomat.,(2011).
[5]L.Li-’yu,S.Ji-Min,J.Min-Chang,K.Kyung-Jin,K.Dae-Eun,andM.Jae-Min,”Wearrateofvel’ticanygrownZno
nanowiresslidingagainststeelmicro-sphere”,Mat.Sci.&Eng.A,460411:1(200’7),3’70-376.
[6]『;!.A』・1nulhaq,A.Umar,yB.Hahn,“GrowthofalignedZnOnanorodsand
nanopencilsonZnO/Siinaqueoussolution:growthmechanismandsl;1’tlcturalandoptica11)roperties”,
24
14anotechnology,1.11(200’7)115603.
○-08
Cellprocessingwithelectronbeam
KenWatEmabel≒WEltarulnami2・3,andYoshimasaKawatal’3
’DepartmentofMahanicalEnginec3ring,Shizuokauniversity,Japan2DivisionofGloba1ReserchLeaders,Shizuokauniversity,Japan,JST,CREST
3-5-IJohoku,Hamamatsu,Shizuoka,JapanTEL&FAX:+13卜523-478-1076e゙-mai1:wEltanabe.1(en④()ptsci.e昭.shizuokE1.acjp
Abstract
Wel)resentcharacteristicex/211uationofce1II)rocessingusingan(?lectronbeam,inorderto
realizenanometricfabdcation.lnthise)(periment,irradiationareaswereobservedwitha
phase-(;ontrastmi(;roscopeandanatomicfbrceITlkroscope.
1.1ntroduction
Nanote?chnologyhasbeenstudiedf1)rmedicineandbiologyappli(;ations.ThetechnologyofFocessingcellsisstudiedinresearchofcarlcertreatmentandgleneticenllineering.FigurelshowsanexampleofcellscuttingbylaserElblation□].Laser
processinghastheresolutionofhundredsofllm-orderbyfo(;usedlight.
Fig.1.Theyeastcellwass叩aratedby
ferlltosecond111ser.ltcanbeconnrmedthatthe
laserprocessingwasachievedwithoutany
dalnageonthecells。
lnthisresearch,wepresenttousean
electronbeaminsteadoflaserfbrce11
1)rocessing.ltisexpectedthatthe(?lectronbeamcanbeusedfor伍bricatingina
nanometricregionsincetheelectronbeam
canbefocusedtoafbwtensofnanometer.ln
this{IM}eriment,we卜radiatean{?lectron
beamonnxedanddriedcells,and
investigatedamagesonthecelL
2, Theexperimentalsetupwhichirradiateswithan(ilectronbeam
Figure2showsaschematicdiagramof
scanningofelectronbeam.Theelectronbeam
wasirradiatedascircleshapebyscanning
operation.
25
‾Electronbeam
Hela-cellFig.2.Aschematicdiagramofscanningof
electronbeam.
Forirradiatingandectronbeamonace11,ascanningelectronmi(;roscope
(SEM)wasused.TheceUsusedinthe(2xperimentareHelacellswhichwere(;ulturedonaslideがass,andtheywerenxedanddriedinordertol)r()cessinavacuum。
Figure3showstheschematicviewofthe(3xperimentalsetupfordectronbeamirradiation.AscanningcoiliscontronedbyextemalCurrentfioma恒nction11{jlleratortoscanthe(?lectronbeamwithanarbitraryshape。
A(xeleratingvoltageoftheelectronbeamischangedas20kV,10ky5kV,2.5kvTheirradiationareaisthesameona11conditions(magnincation:×800).Amountofeうlectronsaresameamountina11conditions.
3.0bs{lrvationafterirradiating
Anerirradiatinge】ectronbeamonace11,itwasobservedwiththeopticalphasemicroscopeandtheatomicforcemicro-scopaFigure4andFigure5showobsclrvationresultswhenitirradiatesdectronbeamof20kvofaxeleratingvoltage,lnaphasemicr()scope,irradiatedareaisRc()gnizedclearlyflsthelineshapeonthe(;e)lsurface.
Electron
gun
Condenserlens
Magnetic,
1ens
こたご
F
m
図
rml
Electron
beam
HM
erture
s a m p l e 卜 し
㎜XYZ-Stage
Fig.4.Theauditobservationinaphase-
contrast1111(3roscopeFElbri(3atedarea
1481.0S
[nm]
113り5
Fig.5.TheauditobservalioninAFM
lntheobservationresultbyAFM,adepthofdentabout170-nmwasproducedattheirradiatedarea.Thedepthofdentwas130-nmwhentheaccderEltingvoltagewas10kv,Wkhtheirradiationof5kvand2.5kMitwasdi伍culttorecognizethedentsonthecells.
26
PC
&ondary
Display一
● 二 - ち ・ , 二 - j . - .
・ ・ = J - - 光照厘 回 lCP!` i`ヨ
X石〇6`rdinat{i”‾‾’
electrondetector
Fig.3.Anexperimentalsetupwhenirradiatingwithelectronbeam
4.Discussion
Wecouldobservedclearchangein(;ontrastthroughaphasecontrastrllkroscope,Thereweresurelychangeonsurfaceshapesof20kvand10kv,butitisverysmallchange。
Comparedwithlaser,thepermeabmtyofelectronbeamislowandenergyofitishigh.lthinktheirradiatedareaofcellisshockedmostonsurfllceofit.Asaresultofit,Wemaysaythatsomestructuralchangewasinducedinthecenandtherewerenotopologicalchanges.
5.Conclusion
Asanext2searchissue,weneedtoinvestigatechangeofacellinthreedimensionsusingaconfocalmicroscope.Wewouldliketooptimizetheconditionsoftheamountofelectrons,orf1)cusedspotsize.Finally,wewouldliketoconducttheexperimentusingtheEXA-microscope[21.1tispossibletoprocessingcellsinatmosphere,andwecanexperimentandobservewithlivingcells.
Reference
[1]JapanScienceandTechnologyCorpo-ration,wwwjst.go.jl)/pr/report/report226/,
(H/15/2011).E2]Y.Nawa,W.lnami,A.0no,A.Miyakawa,
¥Kawataand!S.’rerakawa,ProceedingsofllthlntemationalConferenceonlヽ Jar-FieldOI)tics,(2010).
○-09
PrecisionmllchiningofGCmold
M4)nkyunLee,Kyung-lnJang,andByung-KwonMin゙
SchoolofMe,(lhanicalEngineering,Yonseiuniversity,j5(Pyonsei-Ro,Se!()daemun-Gu,Seoul120-749,KoreaTEL&FAX:+82-2-2123-5813/+82-2-364-6769’e-mail:1)kmin④yongi.ac.kr
Abstract
Thispapehntroducesanovelmachiningr)rocessofglassycarbon(GC)surfaceutilizingtheelectrochemicaloxidation.Hardandbrittlemat❶alscanbemachinedbythesynergyef秘ctofmahnicalmElchiningandele(;trochemicalreaction.Aseriesof(lxperimentswere
performedtoverifytheadvantagesoftheproposedprocess.
1.1ntroduction
Glassycarbon(vitreouscarbon,GC)is
prefbrredasamoldmaterialtobeusedinglassmoldingpress(GMP)becauseofitshighhardnessandthermal乱ability.Furth(lrmore,the(;()hesionbetweenGCand
glassisr{lhltivelyweak.[日However,itishardtomachinethecomplexshapesonGCsurfllcesbecausetheGCisabrittlematerialwahahighhardnes亘S;horc・11ardness>100).AltemativemE1(Jhiningl)r()cessessuchassawing,laser;1blationandfocusedionbeam
(FIB)havebeenr)roposedforl)recisionmachiningofGC.[2-4]Waf・3rswingisasimplestl〕rocess,but,itislimitedtomachinesimplefbaturessuchasstraight(;hannel.[2]I)ire(;tlaserablationusingapulsedUVlaserissunableforrapidprototypingofcomplexshapes,However,ithaslimitationinformllccuracytよe(;auseofthebeamshape.[3]FIBmillingofGCcanachievenanometerscaleE1(;curacy,but,mllchiningspeedisextremelyslowandthemachiningareaismicrometerrange.[4]
ToovercometheabovelimitaUons,anovelm161,hiningprocessusingthesynergismofelectrochemicaloxidationandme(;hnicalmachiningispr()posed.Asoftenedsurfllceis11{?neratedonGCsurfllceasaresultofelectrochemicaloxidation,andmech21nicallyremoved。
lnthisstudy,experimentalinx/tistigationsoftheefTbctofelectr()chemicaloxidationonmachiningwereperfom!ed.Themachiningresultsoftheproposedmethodandconventionalmillingwerecomparedto
27
demonstratethefeElsibilityofther)r()posed
l)rocess.
2.Experimental
Fig.1illustratestheprocessm(?〔;hanismofl〕roposedr)rocess:(a)ElectmchemicalequilibriumonsurfacearebrokenbyapplyingovervoltagebetweenGCworkpiece
(TokaiCarbon)andPtcounterelectrode(ALS),Anoxidelayerisile・neratedonGCsurface.(b)TheoxidelayeriseasilyremovedbyatoolmadeofZr02becauseits
( a ) ( b )
(c)
Electrolyte
Electrolyte
(d)
Electrolyte
❼GC■OxidelayerDCounterelectrode(Pt)
Fig.IEktrochemicalojdationassisted
micromElchiningl)rocesses:(a)fbnnationof
()xidayerbe拓remEhining,(b)removalof
()xidelayerandGC,(Oregenerationofoxide
layer,and,(d)micromflchiningofGCbythe
r(うpetitionofthe(1))and(c)
1゚88-698
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叫IJI[ヤ]゚ こ)9jlo坪ql回IllJggols!ssgupJr
29
0j.0
Opticanycontronableelectrophoresiswithaphotoconductivesubstrate
TaikjN宅誤himaA,’lでaka恒milwahashiA,WatarulnamiB’c,AtsuoMiyakawaA・c,
andYoshimasaKawataA’cAFacultyofEngic?ering,Shizuokauniversity,Japan
8DivisionofGloba1ResearchLaders,Shizuokauniversity,Japan
cJapanS;cierlceand’r7echnologyAgency,CREST,Japan
e-mai1:kawata④eng.shizuoka.acjp
Abstract
Wedevelopopticallycontrollableelectrophoresiswithaphotoconductivesubstrate.M厄demonstrate
simultaneousmanipulationofmicrol3articleswithoutanynow(;hnnels.
1.1ntroduction
MicroTota1AnalysisSystems(μTAS)and
Lab-on-a-chiphavebeendevelopedinamedical
andbiologicalapplications,andtheyhavebeen
irltensivelystudied.Thesystemsareexpectedto
havemorequickproceduresandhigher
functionality.
0bjectiveofthisstudyistocontrol
microparticlesinnuidwithlaserirradiation.By
combiningpropertyofphotoconductivesubstrate
and c31ectrophoresis,wecanElchieve
isreducedinlheregionthatthelaserwas
irradiatedbecausecondu(;tanceofirradiatedarea
isincreased.Figurelshowsschematic(1iagramof
r)rincipleofphotoconductivembstrate.Bil2Si020
(BSO)isusedasphotoconductivesubmate[I’21.
Light
4 4 〔 旬 匹 返 誕 ・ D
目 口 ; 粉 面 ; i a i i a 〕
eee4i)価9←≒う,瘤総垂心要轟
2.Experimentalsetupofoptieal
mieroparticlescontrol
2.1Photoconductiv{lsubstrate
Photoconductivesubstrateisakindof
semiconductor,anditsconductanceisincreased
byalaserirradiation.Nvhenthephotoconductive
substrateisappliedavoltage,potentialgradient
whichrelatedtoresistanceofsubstratearise.0n
thephotoconductivesubstrate,potentialgradient
AI・ea
Fig.ISchematic(liagramofpincipleof
photc3c【】nductivesbstrate.Dashedlineindicates
potentialgradientxvithoutlaserirradiation.SOlidline
indicatesr)otentialgradientwithlaserirradiation.
2.2Ekctrophoresis
Figure2showsr)rirlcipleofelectrophoresis.
IElectrophoresisisthemotionofdispersed
particlesrelativetoanuidundertheinnuenceof
microparticles()I)erationwithoutnowchanne1.j
Webelievethatthistechniquecontributeto。
developmentofthehighfun(;tionalityanalysislン
devices.
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11皿○
Fal)l°icationofAntir{lflectionsurfaceviaNllnosphereLitl14}graphy
HaesungPark,KyoungsikKim*S;(;11001ofMechanicalEnllineerinlyYonseiuniversity,50Yonsei-ro,Seodaenmn-gu,Seou1120-749,Ko警彗
TEL&FAX:+82-2-2123-5815*e-man:kks@yonsei.ac.k「
Abstract
lnthispaper,weinvestigateopticalabsorptioncharacteristicofthesubwavelengthlmtirenectionsrfllceswhichareflibricatedbysin111e-stepdeepl’eactiveionetchingwithn飢ospherelithography.Byintegratingconventionalquarter-wavelengthantirenectioncoatingandSinanoconical-fhlstum,wesuccessfilnyextendthealltirenectionbandwidthinclduing1111ar-UVregionwithoutfabricatingsub-300nmnanostl’1.1cture.
1.1ntroduction
Afterfirstdemonstrationofsolarcen,manyresearchershavebeenstrivedtoimprovephotovoltaicemciencyandaneconomicalrationality.Duetotheinnatehighl’t・ifi゙ activeindexvalueofsilicon(Si)material,Sibasedsolarcellmflヲerf1・omalowabsorptionofthesolarenergy.T11ereforethecostaductionandabsorptionenhancementbecomeam司orillterestin
photovoltaictechnology.Thesl.lrfllcel;exturing(suchas㎞V・・1’tedpynlmidetc.)developedforanenhancedlighttrappinginbulkSioverbroadspectralrangeandwideincidentangle.Thiscouldbeabettersolutionthanthequarter-wavelengthantirenectioncoatingwhichcanonlyimprovetheabsorptionofaspecificwavelengthrangeandlimitedangleofincidentsolarenergy.However,duetothethicknesslimitation,thisstrategycannot411rectlycompatiblewiththinmmSisolarce11,whichisabouttwoorderofmagnitudethinnerand(;heaperthanbulkSisolarce11.R{1(;ently,newstrategyofenhancedlightabsorptionbasedonnanostrl。l(;ture,suchasSinanocone(SiNC)[1]andSinanowire
(SiNW)[2]isl)I゛・:)posed.Thesenanostl’1lcturescanl)rovideagraduanyincreasednanoscalerefi・毒tiveindexsl:1’l.lctureandminimizerenectionarisingfi・omrefi・ε1ctiveindexdiferenceattheSiandllh・inta・fllce.[3]T11erefore,itismlcessarytoinvestigatethecorrelationbetweenabsorptioncharacteristicandgeomeU’yofSinanostructure.
31
lnthispapel;wehavefabricatedARnanoislandsonSinanoconic醤溢血鬘marraybyusingnanospherelithographyandsingle-stepdeepreactiveionetching.Andwehaveinvestigatedtotal(spectraland(nfヲfused)absorptionandl’elFlectionl)I゙ opertyofnanostl・ucturesoncrystanineSisubstratebasedonUV/VISspectrometerwithintegratingsphere。
2.Samplepreparation
ourE11:)1)roachtohighlyorderedSinanosl:1’uctureusingself・assembledllanospherelithographyiscomposedoftwosteps.Thefirststepisdepositionof
l)olystyrene(PS)11ε1110spheremask.Andthesecondstepisin4:luctivelycoupledl)lasma
(肥I))etching.I∃Seforethedepoition,p-type(100)crystallinesiliconsubstrateswerecutintopiecesof20mmx20mm2.Every
pieceswerecleanedwithstandardRCAIprocess(keptinasolutionofNH40H(25%),l{202(30%),andwaterat80℃for15min)tomakehydrophilicl;isurlヲ11ce。
Thedep(:・sitionofPSsphere(dia.=500nm,360nm),beginsfi’omintroducingofananospheremixturesolutiononthemrfaceofdeionizedwater(18MΩ・cm)inalarge
petridish(dia.=20cm).Themixturesolutionconsistsofethanolandnanospherewatersuspension(10%w/V)withproperratio.Asyou(;anseetheinsetofFig.I(a),onlywhenwemakethesuitablemixtureconcentration,wecanseetheiridescent(;olorfi‘omamonolayerofhighlyordered2Dclosel)ackedPSnanosphereonthewater.
uslng Reference
川J.Zhu,Z.Yu,G.F.Burkhard,C.Hsu,S.T.Connor,¥xu,Q.Wang,M.MCGehee,
S.Fan,andY.Cui,NanoLett・,!}(2009)毘思-282.
圖K.Peng,Y.xu,yWu,Y.ゝりれS,Lee,andJ,Zhu,Sma1LI(2005),1062-1067.
[3]Sでhllang,H,Chen,J.Shieh,C.Lin,C.{2heng,}tLiu,andC.Yu,Nalloscale,2
(2010λ799-805.
[4]H.Park,D.shin,G.Kang,S.Baek,K.Kim゛,andぺVJ.Padina,“召Γθαどyゐa17d
皿紅9廻郵Zμ魯万営&&ZZ芯RI多夕Zw?!二二弧丘可μ尽回沿i
み7たgアα治?gα甜かび匹z加ez?ay7θ-/s/aηゐ
wj訪∫治cθ7777α17θcθ雨c❹畳心地朋ご717α川”,
/ゝdvancedMaterialらAeapt・・d,(2011).
UV-VIS-NIRpeclrc)I)h()lometer(UV3600,Shimadzu&jentificlnstruments)witha60mm-diameteritegratingsphere
(MPC-3100)bysca皿ingamonochromator(;oupledtoahalogenlamp.The£1veragerenectanceofourstructureintheNUVspectralrange000~400n111)issjgnincantlyrducedto3.8%,whilethatofsharp-tippednanocone雌1’ucturesisasmuchas9.2%。Thefilrtherdetailsofour(lxperimentalresultsarediscussedattheconfbrence.
32
4.Conclusion
Theantir(lnectionl)mpertyofourdesignissignincantlytうnhancedcomparedtothatofsharp-tippednanoconestructures,sothatthe21veragerene(;tanceintheNUvspectralrange(300~400nm)ぶicreasedfyom9.2%to
(e:-
柚●
lafeSI
き●
・〃゛
J-
-
〃 ・
〃
團
suni1Ce・.秘xtu吻dj・ ご 端 lll ol 01
51 ol 1 1 091110101 ol l 13 ol
〃 -
J 。 〃 ’ ,
Fig.1(a)Anoptic・11phololSrapllaild(b)aSEMimag(nom!ahiew)of2DPSnan()sphereslll(・nolayermaskp21tlemtransflrredonl;istlbstrate(20×20mm).(c)SEMimalleofl)5;sphereislandsontopofSiNCFarrayswhileNCFarraysare泌datedvial(2Petching・(d)Capturedsidewallprofileimageusingadu211-beamFIB?stem.(e)Aphotograpllofbaresiliconar1(1surfacetexttlr{2dsilicon.
Subse(luently,thedeionizedwaterisdrained3.8%.andevaporated.Finally,themonolayerofToourbestknowledge,thisisthenrstllanoSpherewasslowlytranSferredontothemethodtoextendantirdectionsl)ectrumsiliconsbstratelocatedbeneaththepetriincludingtheNUvregionwithoutanydish.coml)licatedprocesstofllbri(:atefeaturesize
below300nm.[4]3.ExperimentaIResults
lnorderto(;haracterizetherenei(;tanceof
oursamples,weperformedabsolute
hemispherica1 measurement
2j.0
AnalysisoflightandelectronscatteringinathinmmforEXAopticalmkroscope
MasahiroF吐utaljyatarulnami2’3,j4tsushiono2’3,andYoshimasaKawatal’3
II;` acultyofMechanicalEngineering,Shizuokauniversity,Japan2DivisionofGlobalResearchLzaders,Shizuokauniversityjapan
:3JapanScienceandTechnologyAgency,CR】ES’nJapan
E-mail:kawata@e・n11.shizuoka.acjp
Abstract
’Syeanalyzedthelightandelectronbeamscatteringinananometricthinfilm.Wehave
developedanew1111alysismethodthatcombinesMonteCarlosimulationandFDTD(FiniteDiffbrenceTimeDomain)method.TheMonteCarlosimulationisusedtoanalyzeelectronbe肛nscattering,andtheFDTDmethodistoanalyzelightscattering.Wecoatagoldthinmmonthenuorescentmmtocuttheelectronbeanltransmission.Thethicknessofthegoldthinfilmis20nm.Asaresult,theelectronbealTltransmissionwasO%,andthef1111widthathalfmaxi17nunlwas47.1nmattheplanewhichis10nmawayfi’omthemrfaceofthegoldthinmm.
1.1ntroduction
Theelectronbeamelccitationassistedopticalmkroscope(EXAopticalrllicr4:)scope)isanewmkrosc()pewhichcanobservespecimensinthelivingstatewithhighl’esolution.TheEXAol:)ticalmicr゙ oscopeemploysananometriclightsourcewhichis
lleneratedinanuorescentfilmbyelectronbealljrradiEII:ion.[1]1:)isadvantageoftheEXAoptical
mkroscopeisthedamageforthespecimenduetotheelectronbeElmtransmissionofnuorescentfilm.Thetransmissionishighnearly100%whentheincidentenergyisover3keVOurresearchot!jectiveistoeliminatethe(hlrnageonspecimensbytheelectronbeElm.Toachievethiso句ective,wecoatagoldthinmmonafluorescentfilm。Weanalyzedtheelectronbeamandlight
scatteringofnanometriclightsourceinthenuorescentmmcoatedagoldthinnlm.WeuseanewanalysismethodthatiscombinationofMonteCarlomethodandFDTDmethod.TheelectronbeamscatteringinthenuorescentfilmwasanalyzedbyMonteCarlosimulation.Thenuol・escenceexcitedbyelectronbeamwasanalyzedFDTDmethod.
2.Analyticalmethod
l;` igurelshowsschematicofelectronbeamscattering.TheelectronscattersatPotoP3in
33
thisfigure.Weca11PotoP3scattering
position.Whentheelectronsareirradiatedthenuorescentmm,theypropagatestraightlyinthedisUlnce∠1・Slofmeanfi゙ ee
path,andchangepathwayduetoscatteringatatoms.Weanalyzedtheelectronbeamscatteringbycalculatingthedi就ance∠1・SnandsEltterillgangle6k,4foreach61ectron。Theelectronlossestheenergyasitpasses
throughthemeanfi’eepath.Thedipoleswereexcitedbytheenergylossastheelectronpassesthroughthemeanfi’eepath.
PO`1
lncidentelectronbeam
l / X
Y △ S I
PI,べ’je2φ2
Z
--へゝ
≒ / ″≒ / /
⊇ 。φ 1 Θ 4△S2△S3..如
P 、 Θ 3 P 3` φ 31 `
Fig.1:Theschematicofelectronbeams(;attering
We{:a}cu】atetheenergylossf1〕ralls(;atteringprocess.Weassumethedφoleswereelxcitedinthecenterbetweenscatt❶ng
r)ositions,suchasPlandP2inFig.1.Thenumber(迂excitedl)hotonsGaregivenby[2]
G =∠MF
3£,&(1)
where∠1£isenergylossand£BGisbandgapofmaterial.Thedipolepolarizationisrandom.Weanalyzedlights(;atteringfbreachdipolebyFDTDmethod.Thelightintensitydistributionofnuorescencenlmwasobtainedbyaddingtheeach(;alculationresult.Wecoatthegoldthinnlmonthenuorescentn】m.Thethicknessofgoldthinnlmis20nm.WechoseSiNasthenuorescentfilm.Thewavelengthofthenanometriclightsourceis337nm.
E{’()りg一二()に
11 l l 011 011 iil 111 041 011 011 011 011 11 011 11 oll 011 011 oll 011 oll 011 01101 11 1411 olt
[ ニ ー ¬ A 。・皿(j-・・●-aa.-.JJ
レ iご S i N
rFI照男
20nm-
一 一
’1雫『1111177耐|唯
Fig.3:TheresultoflightscatteringbyFDTDmethod
34
IElectronbeam
0.5kcv3kcvJ _ _ L
3.Simulationresult
Figure2showslheresultofthreedimmsionalanalysisofelectronbeams(;attering.ThethicknessofSiNis50nm,thethicknessofgoldthinfilmis20nm.Acceleratingvoltageis3kevFromtheresultsshowninFig.1,allthecllectronsarestoppedbythegoldthinmm。Figure3showstheresultoflight
s(;atteringofdipolesthatareS;eneratedbyelectronbeamscattering.FromFig.2,wecanflndthatthelightintensityislargeatnearlygoldthinmm.Thisisbecausetherenectedellectronsbythegoldthinnlmalsoe?xcitedthedipolesneartheinterfhcebetweenSiNandgoldnlm,。Wemeasuredthedectricneldintensityat
theplanewhichis10nmaway行omthesurfaceofgoldthinnlm.Thefilllwidthathalfmaximumofc2xcitationHghtspotis47.1nnl.
4.Conclusion
TheelectronbeamtransrTlissionise?Hrninatedbycoatingthegoldthinnlmonthenu()rescentmm.Thethicknessofgoldthinmmis20nm.Tocoatthegoldthinmmonthe
nu()r(?scencenlm,then111widthathalfmaximumofe3)ccitationlightspotis47.1nm.EXA()pticalmi(ごroscopecanrealizelessthan50nmresolution.Wehaved(3velopedthenewanalysis
methodcombinedMonteCarlomethodandFDTDmethod.TheMonteCarlomethodanalyzedtheelectronbeamscattering,andFDTDmethodanalyzednuorescence
11{?rleratedbyelectronscattering。
Reference
田W.lnami,K.Nak匈ima,A.111汐akawa,andY.Kawata,01〕t.Express18,128!)7(2010)
[2]DavidC.Joy,“MonteCarlo1110delingfordectronmicroscopyandrTlkroanalysis”,0XFORD(1995)
Qりー.0
lmageresれ】ratiolmethodforhighnsolutionimageindigitalholographicmicroscope
Do-HyungKiml),SungbinJeon2),Sang-HyukLeel)
Kyoung-SuPark2),No-CheolPark2),HyunseokYang2)andYoung-Pi1Park2)1)CenterforlnformationStorageDevice,Yonseiuniversity,Seoul,120-749,Korea
2)DepartmentofMe?(;hanica1Enllilleering,YonseiuniversityS;eoulj20-749,Korea
Phone:+82-2-2123-4677,Fax:+82-2365-8460,E-mail:pnch④yons(?i.ac.kr
Abstract
Thispaperintroducestheimager(2乱orationmethodindigitalholographicm化roscope.Suggestionofr(?searchusestheexactPSFfunctionasimagemtertocompensatetheim昭e(kgradationbyopticalsystemofmicroscope.Phaseshindigitalholographicmi(;roscopesystemisconstructedtoapplythisr(2storationmethod.Fromtheexperimentalresults,improvementofimager{lsolutioncouldbeverified.
1.1ntroduction
Fromthefirstresearchol` holographybyDennisGabor[11,hol()graphyhasstudiedinvariousapr)kations.Digitalholo11raphyisonetechnicofholography,DigitalholographyusestheCCDasthematerialtorecordthehologramandreconstructstheinfbrmationbyopticalornumerical
pr()cessing[21.ThismethodhaslldxyantageinthelimitationoftheRlcordingmaterialandreprocessingbycomputlltionalmethod.Digitalholographicmicroscopyisoneofthemostdesirable111)plicationsindigitalholography.Digitalholographicmicroscopy
ゲ
XyW
lj●
l ミ
㎜ ● 皿
㎜ l 岫 e
徊 仙印ler
Laxf
|豪,jL少・゙ニ
Fig.1.1)haseshittdigil;11110】ographic
lnlcroscpy
wouldllrovidetlle3Din丘)rmationofthesample.ltwouldbeusefulinmanyresearchareas.Reうs()lutionofdigitalholographicmicroscopyisstronglydePendedonsizeofCCD,pixelpitch,andsamplingrate.lnsveralreRarches,thesefllctorsareanalyzed
圖lntheimagingsystem,qualityoftheimageislimitedbyspecofopticalcomponents.lnotherword,alloptica1(;()mponentslimittheperfbrmanceofimage
qualitywhichisequaUy叩pliedindigita1110防graphicmicroscope.
lnlhisl]aper,imagerelgorationmethodis
proposedtoavoidthelimitationof()pticalcomponentsandll(;hievethehighr(lsolution.
2.Phaseshiftdigitalholographicmicroscopy
TheschematicviewofexpenmentalsetupisshowninFig.1.4-stepphaseshiftingmethodisusedinsystem.532nm
greenlaserisusedaslightsource.1536*1024(pixelpitchgum)にolutionCCDcameraisusedasthesensor.Phaseshiningisperfonnedby2kindsofwave
plates.0tjectlensis20xmicroscopelensUSAFchartisadaptedastlletargetsample.
35
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。9JmJadりs!nbxN叫IJojSd叫lju!snSuH13;)sdniiu!而lu!xqtu91以s謡BJols琲叩こ)!1μuJiolotII)g)suq-SRdlJo心!su叩aiiuJols叫lii11!sll9J3ul。
)iJudl!d-lunoA
pue‘)μudnSJunoxx‘iuuA河oasunxH‘yudloaqJ)-oN‘uIりl釦oa祠uN
ul□lu()y・タLlnS‘9rl)inx}{-iiuuS[g]
口6脈拍 ∠ 2 r か 卯 Jn7m77勿‘jtldlJjololl呻押!piu阻!甲-as明d。
‘liu叫Z°lpull叩n涵ul臥’I[tア]
け/θJI`夕-9/こaA/ぢ’/吻聊/勿ノフ;η/j印‘Ju91弧s
心血JOlo111叫再puJollo!lnlosQll。!punsvpuuuvp晩ouHuuA[E]
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pusQJjxqxH召;)!JQ田nupalonJlsuo3aJS;|!uolnllBI“II(リlul!(IS\‘ltulBIJillololtlglllllLuolJlj‘lagQOJoas明dpuB叩nl!ldulBuo!1肌uJqJu!
叩oqu!uluoc)司叩u113Jiiolollpau!BlqO・[例po叩Quls!叩xqPau!ulqos!司BptuuJiioloH
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4J.0
CathodeluminescencelmagingofMetallicNan()structures
RytjiNodE11゙ ,SyotaFukadal,ゝ f£lsunoriNawal,Atsushiono2’3,Watarulnami2’3,DuGuanxiang4,ShinSait♂,andYoshimasaKawatal’3
1)I)t?partlnentofM(?(;11anicalEnllilleerinl乱FacultyofEngiee面g,Shizuokauniversity2)DivisionofGlobalResearchLeaders,Shizuokauniversity
3)CREST,JapanS;(;ienceandTe(;hnologyAgency
3-5-1Johoku,Naka-ku,Hamamatsu,Shizuoka432-8561,Japan4)D・・i)ε1rtmentofIElectronicEngill。ering,Graduate5SehoolofEngirleaing,Tohokuuniversity
6-6-05Aoba,Aramaki,Aoba-ku,Sendai,Miyagi980-8579,JapanTEL&FAX:+81-53478-1076e゙-mail:kawata④eng,shizuol(a.acjp
Abstract
Thepurpose()fthisresearchistoanalyzethee)ccitationl)ropertyofasurfaceplasmon(SP)ona
nanometgscalestructure.TheSPlunliescentpropertyoane-dimensionalgratingstructureofthegold
thinfilmwasinvestigated.Wescceededinobservationwlth200nmoapati111resolutionandobtained
cathodelum柚escence(CL)imageofgoldnanorods.
1.1ntroductiol
Recently,awav昭uideandanlterwithSPhavebeende?veloped.Sinceametallicnan(心ructureisusedforthewav昭uideandthenlter,itisnecessa叩toinvest治atetheSPe)(citEltionpropertyinametallicnanostructure。
SPisgeneraUyexcitedbylight.SincetheexcitationareaofSPiscomparableasthewavelengthoflight,itisdimculttoirlvestigatetheSPex(;itationpropertyofthenanostructurebelowthewavelengthoflight。
Thepurposeofthlresearchistoanalyzetheex(;itationpropertyofaSPonananometerscalestructure.Ane?lectronbeamisusedtoovercomethedimactionlimitof゙ thelight.Thisisbecauseaspotsizeoftheelectronbeamcanbelessthanthatofthelight.Theelectronbc?amcanbefbcusedtoaspotsizeintheregionofafewnanometers.ThefbcusedelectronbeamlocallyexcitesaSPatthesurfllceofametallicnanoMructure.Theref1)re,theSPelx(;itationpropertyinananostructuresmallerthanthewavelengthoflightcanbeanalyzed.
2.Theobservationprincipleofcathodeluminescence
17汝ure.1showsthe()bservationl)Hnciple
37
ofSP.TheelectronbeamisR)cusedatthesurfllceofthemetallicstructure,andexcitesaSP.W11enaSPrestorestoitsfbrmerstate,emitsaCL.Theemissionspectrumdependsonananostructure.Anol〕ticalimageisbuiltbyrasterscanningofanelectronbeam.Theexcitationpropertyisanalyzed丘omthisinformation.
Cathodelulninescence
/(CL)
Fig.ITheobser7ationl】rincipleofSP.When
asurnlceofgoldisiaadiatedwithanelectron
beElm,SP四煥neratedandpropagatesatthe
surface.
3.ExperimentahetupfortheSP
propertyonmetamcnanostructure
Figure.2showstheschematicdiagramofaexperimentalsetup.lnthisexperiment,thescanningelectronmicroscope(SEM)wasusedn)rirradiationofandectronbeam.An(11ectronbeamwasfocusedonasamplesurfacewith飢o句ectlens.Thelight,whichwasQccited介omasampleis(;ollectedwithalensbuiltintotheopticalstage,anda
I)tloto-mukiplier(PMT回etectsthelight,An(叩ticalimageisl)roducedbysyn(;hronizing21(;quisitionofthePMTsignalandanelectronbeamscanning,
Fig.2Theschematicviewofthe(2)(perimental
面vicefbrCLim昭ellquisition.
4.ExperimentlllresultsofSPemissionfromFating4rueture
I゙ 胎re.3(a)showstlle()ptielllimageofSPemission介omolltl-(Umenがona11;rating,andFigure.3(b)sh()wsthelineprofUealongthelin(・in(1icated(a).Thelightc・missionwhichcausedbySPsEltteringonroughsulfhceofthegoldnlmwasm㎝stlred.TOmakethe11rating,wedugt祀nchesonthe
goldfilmwith(?1ectronbeamlithography.ln向ure.3(a)and(b),thelurninescenceintensityofthetopsurfaceofthegratingishigherthanthatofthebottomofthe廿enches.ltseemsthattheSPemissionefnciencyonthetopsurfaceofthegratingishighbecausetheelectronbeamwasfocusedonthetopsurfllceofthegrating,Theluminescenceintensityinthetopsurnlceofthegratingisconstantineveryposition.Fromthisresult,SPemissionwasllc3nerated()fthetopsurfllceofthegrating・
Fig.3(a)TheCLimageofthesllmple
21cquir(・dinthisexperill!ent,(b)ThJrlepronle
()17theporti()noftFleredlirle()fFig.3.
38
5 . S → 皿 d n a n o r o d s
Tor(?vealtheSP,ご7ccitationl)r()pertyin
goldnanorods,weproducedgoldnanorods.GoldnanorodshaveadvantagestocontroltheSPband.So,theseareusedforbiosenslngoomagmg。
Goldnanorodsweresynthesizedbyseed-mediatedgrowthmethod.lmpuritieswereremovedbycentri恒galsl)aration.Naturalseasoningwasca❹edoutafterbeingdroppedatasiliconwa狗r.Figure.4showstheSEMimageofgoldnanorods.
Fig.4TheSEMimageofsynthesizedgold
rlilnorods.Sizeswereabout60nmatlongaxis,
about22nmatshortaxis,andtheaspectratiois
2.7.TheabsorptionpeakwasinthewElvelength
or520nmand700nm.
6.Conclusion
lnthisresearch,weacquiredtheCLimagewhichisemitted丘omagoldthinfilmwithone-dimensionalgratingMI’ucture,Thelumirlescenceirltensityinthesuriceofa
goldthinnlmwasconstantineveryposition.Fromthisresult,thelightemissionwascausedbySPscatteringroughsurfaceof
goldnlm。Furthermore,wesynthesizedgold
nanorodstoinvestigateitsSP。Fromnowon,theSPexcitationproperty
ofgoldnanorodswillbemeasured.
Rearence
[I]N.Yamamot0,0YOBUTURIJ5(2006)41.
[2]B,Nil(oobakht,M.IE1-Sayed,Chem.Matc・d5(2003)回mミ-1962.