1 cmos image sensor seied manoochehr hoseini university of tehran-iran supervisor : dr. fakhraei in...

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1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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Page 1: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

1

CMOS IMAGE SENSOR

SEIED MANOOCHEHR HOSEINI

University of TEHRAN-IRAN

Supervisor : Dr. FAKHRAEI

In the Name of GOD advanced VLSI class presentation

Page 2: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

2

Applications

Page 3: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

3

The imaging system

[1]

Page 4: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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FILL Factor

Optically Sensitive Area~30% of Total Pixel Area

[3]

Page 5: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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Increase of FILL Factor

[2]

Page 6: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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Microlens and Colour Filter

[3]

Page 7: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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Colour Filter Response

[3]

Page 8: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

8 [2]

2.0

3.0

4.05.0

1.0

10.0

’02 ’03 ’04 ’05 ’06 ’07 ’08

Pix

el p

itch

, u

m

5.6um (0.3M pixel)

3.8um (1.3M pixel)

2.8um (2M pixel)

< 1.8um

2.2um (7.2M pixel)

< 1.5um

Year

This Work

CMOS Image Sensor Trend

Page 9: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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A typical 3T pixel

Page 10: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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4T Architecture

Page 11: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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4T Shared Pixel Architecture

Page 12: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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Pixel-level charge summation for sub-sampling.

[2]

Page 13: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

13

VDD

RGTG1

SELTG2

TG3

TG4

R11

G21

R31

G41

APS_OUT1

Sum of signal =

Sum of noise = N2

N2

NNSNR log1032log20

By pixel summation SNR increase by 3dB

[2]

Page 14: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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R Gr R Gr

Gb B Gb B

Gb B Gb B

R Gr R Gr

Ra

mp

Ge

n. Savg

Savg

Average signal =

Average noise =

NNSNR log1032log20

2

N

N

By clumn wise averanging SNR increase by 3dB

[2]

Page 15: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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Old and new GNOX process; improvement of random noise by reducing the trap effect on SF transistor.

[2[,]4]

Page 16: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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Increase light gathering power by 20% pixel height shrink

[2]

Page 17: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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SNR Increase With New Sub-Sampling

[2]

Page 18: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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Implementation of average filter by MATLAB software

Original image

Use average filtering

Page 19: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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Implementation of average filter by MATLAB software

Original image

Use average filtering

Page 20: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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4-shared pixel architecture High fill factor (57%)

with SNR max of 41dB under the full-resolution operation. Pixel level charge summation Increase 6dB in SNR Noise reduction technology SF trap treatment to reduce 1/f noise

Page 21: 1 CMOS IMAGE SENSOR SEIED MANOOCHEHR HOSEINI University of TEHRAN-IRAN Supervisor : Dr. FAKHRAEI In the Name of GOD advanced VLSI class presentation

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REFRENSES

[1 ]A. El Gamal and H. Eltoukhy, “CMOS Image Sensor,” IEEE Circuit and Devices Magazine, vol. 21, no. 3, pp. 6-20, May-June, 2005.

[2 ]Young Chan Kim, Yi Tae Kim, Sung Ho Choi, Hae Kyung Kong, Sung In Hwang, Ju Hyun Ko, Bum Suk Kim, Tetsuo Asaba, Su Hun Lim, June Soo Hahn, Joon Hyuk Im, Tae Seok Oh, Duk Min Yi, Jong Moon Lee, Woon Phil Yang, Jung Chak Ahn, Eun Seung Jung, Yong Hee Lee .

Samsung Electronics, Kiheung, Korea“1/2-inch 7.2MPixel CMOS Image Sensor with 2.25µm Pixels Using 4-Shared Pixel Structure for

Pixel-Level Summation .” ISSCC 2005.[3 ]CMOS Image Sensors : Lenses and Filters on Silicon // Lindsay Grant, ST Microelectronics

Robert Henderson, University of Edinburgh [4 ]J.Y. Kim, et al., “Characterization and Improvement of Random Noise in 1/3.2” UXGA CMOS

Image Sensor with 2.8µm Pixel using 0.13µm Technology,” IEEE Charge-Coupled Devices and Advanced Image Sensors, pp. 149-152, 2005.