1 cmos for next 15 years as the mainstream of nano device technology: problems, solutions and beyond...

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1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi IWAI

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Page 1: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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CMOS for next 15 years as the mainstream of nano device technology:

problems, solutions and beyond that

Tokyo Institute of Technology, Japan

 Hiroshi IWAI 

Page 2: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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16Gb NAND, SAMSUNG

Now: After 45 Years from the 1st single MOSFETs

Page 3: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Sub-10 nm CMOS transistors will be realized with new technologies anyway.

Concerns of integration such huge number of transistors.    Already 16Gbit: larger than that of world population comparable for the numbers of neurons in human brain

128Gbit: comparable with those of galaxies

Page 4: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Concerns for the integration

1) Too huge power consumption, heat generation?

2)Too huge variations in transistor characteristics, which could make the circuit design impossible?

3)Too many number of transistors for the circuit designers to manipulate? (design crisis)

4)No merit of transistor downsizing in performance and power, because of CR of interconnect cannot be reduced?

8)Who will pay the huge production cost?

Page 5: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

5JEITA IC Handbook

150mmwafer

200mmwafer

300mmwafer

Front-end processing equipments

Front-end processing buildings

Back-end processing equipments

Front-end ancillary facility

Back-end processing buildings

1M 4M 16M 64M 256M 1G Bit DRAM

Am

ount

of

capi

tal i

nves

tmen

t (M

US

$)

0

200

400

600

800

1,000

1,200

1,400

1,600

1,800

2,000Amount of capital investment on Each of DRAM generation

Problem is the huge production cost and investment!

Page 6: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Examples of foundry facility: UMC

UMC

Page 7: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

7TSMC

Volume production with lager wafer is a solution

Page 8: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Concerns for Nano-CMOSintegration

Page 9: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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9 yrs + 2 yrs delay* 9 yrs? + 2 yrs delay? 9 yrs + ?yrs delay

675mm/2021?450mm/2012?300mm/2001200mm/1990 (125/150mm - 1981)

We are here When does this happen?

When do we start planning for next wafer size transition?

Page 10: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Furnace Height: 12 m Weight: 36 ton Hot zone: 40 inch Cusp-type super conductive magnetCrystal Diameter: 400 mm Weight: over 400 kg Body length: over 1m

Provided by Super Silicon Crystal Research Institute Corp.(SSi)

Crystal pulling furnace becomes too hugeSi crystal height cannot be very long because of its weight

Page 11: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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2004 2005 2006 2007 2008 2009 2010 2011 2012

2004 2005 2006 2007 2008 2009 2010 2011 2012

Carrier & lot-sizedetermination

Direct TransportStandards

Production EquipmentStandards

Factory Control System Standards

Interoperability Testing& Reliability Verification

450mm waferStandards

There is a proposed time line from 300 to 450 mm, but huge cost, work, energy are required,And no one can take a leadership at this moment.

Page 12: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Concerns for the integration

1) Too huge power consumption, heat generation?

2)Too huge variations in transistor characteristics, which could make the circuit design impossible?

3)Too many number of transistors for the circuit designers to manipulate? (design crisis)

4)No merit of transistor downsizing in performance and power, because of CR of interconnect cannot be reduced?

8)Who will pay the huge production cost?

Page 13: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Those concerns have been talked about so many times and so many years. (Like wolf boy!)

Hopefully, the status in which wolf has not come, would continues for future.

Each concern is a really crisis and critical problem.

However, each crisis will not make completely useless to make downsizing.

We will find a practical solution with many compromises, such that water always fine a lowest places and keep running.

Page 14: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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P. P. Gelsinger, “Microprocessor for the New Millennium: Challenges, Opportunities, and New Frontiers,” Dig. Tech. 2001 ISSCC, San Francisco, pp.22-23, February, 2001

Microprocessors Trend

Today: 2002 (Intel)

Lg sub-70 nm

Tox 1.4 nm

f 2.53 GHz

P several 10 W

N 50 M

Heat generation

2002 年   10W/cm2 Hot plate

2006 年   100W/cm2 Surface of nuclear reactor

2010 年   1000W/cm2 rocket nozzle

2016 年   10000W/cm2 Sun surface

2008 (Intel)

Lg sub-25 nm

Tox 0.7 nm

f 30 GHz

P 10 kW

N 1.8B

MIPS 1M MIPS (TIPS)

Increase in Power consumption Heat generation

Past: 1972 (Intel)

Lg 10,000 nm

Tox 1200 nm

f 0.00075 GHz

P a few 100 mW

N 2.25k

Page 15: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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1)Power and heat increaseMaybe, it is not efficient to increase the clock frequency and number of transistors

There will not be a big merit without improving the operating frequency of board or package, and reduce the power consumed there.

Main job of my PC is editing of the document and accessing to internet. Such an extremely high clock frequency should not be necessary.

Improvement of PC algorithm such that using file searching method of Google will save the power very much.

Downsizing of Printed Circuit Board will also save the power.

Page 16: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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5) Variation of transistor characteristics

System and circuit design will assume such variation.

If too huge variation, Reconfigurable circuit and system desing can avoid such transistors with huge variations. ECC ( Error Correction Code ) will helps a lot.

Cannot suppress the variation under certain level, but we can offer as many transistors as the designers want.

It is also important to use the larger device in the circuit, depending on the usage.Large gate are is useful to reduce the flicker noise.

Page 17: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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6)Desing crisis for human power

We could expect the progress of CAD.Then, we can do only whatever we can design in that period with the given manpower.

Multi-level system/circuit design, such as multi-core of microprocessor will save the human power, for example.

Page 18: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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7) Interconnect R & C

It has been continuously said from 2 or 3 micron meter generations that interconnects limit the downsizing. But fortunately, it has never happened before.

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8)Huge development and production cost.

Leading edge company in memory, microprocessor, DSP, foundry make huge profit.They should cover the coat.

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40000

35000

30000

25000

20000

15000

10000

5000

0

( B

Yen

Intel Samsung TI RunesusToshiba TSMC NECEL

Good Profit

JEITA;IC Handbook

ProfitRevenue

Japanese makerSmaller profit

Page 21: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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8)Huge development and production cost.

Leading edge company will pay the cost.

Otherwise they will drop off from the existent race, and the competitor will be very happy.

2nd and 3rd tier companies could enjoy the reduced cost of the development and production, but no big profit.They cannot be too late to proceed to the downsizing, because China will catch up soon.

Page 22: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Future

Page 23: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Post Scaling Issue

2030

3 nm

Gate length

Post scaling period

?

Page 24: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Anyway, we will reach the downsizing limit in 15- 20 years.

It will not happen, suddenly: “There is no downsizing from tomorrow and you do not need to come to company from tomorrow”

Probably, period of each generation, or node will becomes longer and downsizing eventually approaches to the limitation.

Page 25: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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After the limit of downsizing?

No, technology node change, and then, no design of new microprocessors?

Same lithography mask can be used for many years?

Same equipment can be used for many years?

2nd, 3rd companies and counties reach to make the most advanced microprocessors with cheap cost?

Then, price of microprocessors and even equipments becomes extremely cheap?

It will be a very good thing for microprocessor users. However, will it be a very serious crisis for advanced countries and companies in semiconductor?

If there is no more downsizing, the semiconductor engineers will lose their jobs?

Page 26: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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There are many jobs after the downsizing.

Technologies of the introduction of new material, new process, new structure, will not be completed in 15 years.Note that introduction of new materials usually take more than 10 years.

There are also other many works remain: Hybrid integration, 3D integration, Miniaturization of board.Efficient algorithm for system.

There would be a revolution for manufacturing process Do we need big CR? What would be a wafer in future? Is it the same as it is now?

Page 27: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Scaling proceeds

Siz

e (G

ate

length

etc

Saturation of Downsizing

2020?

5 nm

New Materials, New Process, New Structure ( Logic, Memory)

Hybrid integration of different functional Chip Increase of SOC functionality

3D integration of memory cell3D integration of logic devices

Low cost for LSI processRevolution for CR, Equipment, Wafer

Miniaturization of Interconnects on PCB(Printed Circuit Board)

Introduction of algorithmof bio-system

Brain of insects, human

Page 28: 1 CMOS for next 15 years as the mainstream of nano device technology: problems, solutions and beyond that Tokyo Institute of Technology, Japan Hiroshi

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Thank you for your attention!