ファラデー回転子 rare-earth iron garnet single crystals ) · 2 1....
TRANSCRIPT
-
No.G005-J
( Rare-earth Iron Garnet single crystals )
5/1/2013
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1
1. 2 2. 3. 4. 3
4-1. 4-2. 4 4-3. 5 4-4. 5. 6
5-1. 5-1-1.
5-1-2. 5-1-3. 7
5-1-4. 8 5-1-5. 9
5-2. 10 5-2-1. 5-2-2. 5-2-3. 11 5-2-4.
5-3. 12 5-3-1. 5-3-2. 13 6. 14 6-1. 6-2. 6-3. 15
6-3-1 16 6-3-2 GMF 17
6-4. 18
7. 19 7-1. 7-2. 7-2-1. A() 7-2-2. E() 20 7-3. 8. 8-1. 8-2. 21 8-2-1. 8-2-2. 9. 22 9-1. 9-2. AR 9-3. AR 23 9-4. 10. 10-1. 24 10-2. 10-3.
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2
1.
RoHS G
GTD (TD Temperature Dependence )
GLB (LB L-Band )L GSF (SF Saturation Field )
GMF (MF Magnet-Free ) E
ETD GTD 2.
AAABBBBCD ex. GTD 1550 L A - 45 0.5 AAA GTD, GLB, GSF, GMF, ETD BBBB 1550(nm); 1310(nm), etc. C L; 11mm C; D A; E; N; X;
*
3.
45 , Dq/Dl(deg/nm) GTD GLB GSF GMF ETD
1310nm 0.085 0.085 0.085 0.085 1480nm 0.07 0.075 0.075 0.075 0.07 1550nm 0.06 0.07 0.065 0.065 0.06 1590nm 0.055 0.065 0.06 0.06 0.055
45 , Dq/DT (deg/C) GTD GLB GSF GMF ETD
1310nm 0.04 0.04 1480 - 1590nm 0.045 0.065
0.07 0.07 0.045
(dB) GTD GLB GSF GMF ETD
1310 - 1550nm 0.1 0.1 0.1 0.1 1590nm 0.16
0.05 0.12 0.16 0.16
(m) (typ.) GTD GLB GSF GMF ETD
1310nm 310 320 280 310 1550nm 450 390 475 420 450
GTD GLB GSF GMF ETD
Hs(Oe) 700 800 200 700
Tcomp.(C)
-
3
4. (RIG) 4-1.
(RIG)(LPE) RIG (C3)(A2D3)O12 4-1
4-1 4-2 RIG
4-1
Table. 4-1 RIG GTD GLB GSF GMF ETD
() 12.5 (10-6 K-1) 11 10 11 (1550nm) * Fig.4-2 2.3 2.4 * 7 *(GPa) 200 * 0.29 *(g/cm3) 6.7 *(W/m K) 5 *(J/mole K) 420
*
4-2
Oxygen ions
octahedral sites
dodecahedral sites
tetrahedral sites
2.20
2.30
2.40
2.50
800 1000 1200 1400 1600 1800Wavelength(nm)
Inde
x GLB
GMF
GTD, ETDGSF
-
4
4-2.
RIG 1m 5m
RIG 10002000(deg/cm) 4-3 GTD 1cm 3 45
RIG
(5-1-5 )AR (5-1-4 )()4-3
RIG
GLB L 5-2
4-3
-
5
4-3.
RIG () LPE RIG 4-1 2 2 (5-3 )RIG
RIG RIG
GMF GMF GMF GMF 6
.4-1 RIG
4-4.
RIG LPE 5000ppm GTD GLBGSFGMF G ETD 4-4 G 1000ppm RoHS
Fig.4-4
500
600
700
800
900
1000
Lead Impurities ( ppm )
Freq
uenc
y
GSFGTDGLB
GMF
-
6
5. 5-1. 5-1-1.
5-1
DFB
5-1
5-1-2.
5-2 5-3 GTD 3 45 1nm O E C L
5-2 GTD1310
5-3 GTD1550
Collimator
SM-fiber
Light Source
Polarizer
Faraday RotatorMagnet
Themometer
Analyzer Detector
Power Meter
Contoroller (PC)
-
7
5-1-3.
5-4 5-5 GTD 45 1 050GTD ETD 1310nm 1550nm
5-6
5-4 GTD1310
5-5
5-6
40
45
50
-50 0 50 100Temerature
Fara
day
Ang
le
degr
ee)
40
50
-50 0 50 100Temperature
Fara
day
Ang
le
degr
ee)
GTD1550ETD1550
GLB1550
GSF1550
-50
-40
-30
-20
-10
0
-50 50 150 250Temperature ()
Ext
inct
ion
Rat
io (d
B)
-
8
5-1-4.
5-8
5-7 RIG RIG
5-7
5-8
AR
AR RIG 3 5
5-9
5-9
( thickness ) / cos () ( Magnetization ) x cos () incident angle : light Magnetization
44
44.5
45
45.5
46
0 10 20 30 40 50Incident angle (deg)
Fara
day
rota
tion
(deg
)
-50
-40
-30
-20
-10
0
Ext
inct
ion
ratio
(dB
)
0
0.5
1
0 20 40 60Incident angle of light (deg)
Inse
rtion
Los
s (d
B)
-
9
5-1-5.
5-11 5-10 5-11 22.5 45 5-10
5-11
E
linearly polarized light
load
pressure sensor
0
10
20
30
40
50-67.5 -45 -22.5 0 22.5 45
polarization plane for stress (degree)
Ext
inct
ion
Rat
io (d
B)
0(N/mm ) 3 610121417
2
-
10
0
0.2
0.4
0.6
0.8
1
1300 1400 1500 1600 1700
Wavelength(nm)
Inse
rtion
Los
s(dB
)
GLB
GSF
GTD, ETD
GMF
5-2. 5-2-1.
5-12 PF
DFE
5-12
5-2-2.
5-13 C L GLB L L GLB
5-14 GLB GLB 1.5 GLB
5-13
5-14 GLB
0
2
4
6
8
700 800 900 1000 1100Wavelength(nm)
Inse
rtion
Los
s(dB
)
Collimator
SM-fiber
Light Source
Faraday RotatorMagnet
Slit Detector
Power Meter
Contoroller (PC)
-
11
5-2-3.
()
5-2-4.
5-15 5-16 5-15 GTD1310 5-16 1mm
5-15 GTD1310
5-16 GLB
0
5
10
0 25 50 75 100 125Temperature (
Los
s(dB
) 973nm
786nm
1064nm
0
0.1
0.2
0.3
0.4
0.5
-50 -25 0 25 50 75 100Temperature (
Los
s(dB
)
GTD1310
-
12
5-3. 5-3-1.
RIG RIG 4-1
RIG (5-3-2 ) RIG
5-17 RIG
5-18
RIG
5-18
Hex
d2d1
+Ms
-Msmagnetization
substrate
Faraday rotation
domain-1
domain-2
-qf)( +qf)(
0
10
20
30
40
50
0 200 400 600 800Magnetic Field Hex (Oe)
Fara
day
Ang
le (d
eg)
20
25
30
35
40
45
50
Ext
inct
in R
atio
(dB
)
-
13
5-3-2.
5-190 (n=0) 45 -3dB-1dB
5-19
-2
-1
n = 0
+1
+2
incidentpolarization
q(0)
-
14
-1.5
-1
-0.5
0
0.5
1
1.5
-1000 -500 0 500 1000
Hex(Oe)
m/M
s
Hs
Hn
6. 6-1.
6-1 2 2 6-2 GTD
Hs Hn Hc
6-1
Hs :
6-2 Hn :
Hn 6-4
Hc : GMF
Hc Hn GMFHc 6-3
6-2 GTD
Collimator
SM-fiber
Light Source
Polarizer
Faraday RotatorElectro-magnet
Gauss-meter
Analyzer PD
Voltmeter
Contoroller (PC)
Voltmeter
-
15
0
500
1000
1500
-50 0 50 100 150Temperature()
Sat
urat
ion
Fiel
d H
s(O
e)
GTDETD
6-2.
RIG RIG GMF Hs RIG 6-3GTD ETD Hs 6-4 GSF -2085
6-3 GTD ETD
Hs 6-5 / ( 1) 6-5 1mm
6-4 GSF
6-5
0
50
100
150
200
250
-50 0 50 100Temperature()
Hs
(Oe)
1.
5mm
0.0
0.2
0.4
0.6
0.8
1.0
1 10 100size / thickness
Dem
agne
tizin
g Fa
ctor
N
-
16
6-3. 6-3-1.
6-6 GMF GMF
() Hc GMF
GMF Hc 400(Oe) 2000(Oe) Hc Hc
6-6 GMF Hex-
6-7 GMF Hc Hc GMF
6-7 Hc
-50
-40
-30
-20
-10
0
10
20
30
40
50
-1000 -500 0 500 1000
Hex(Oe)
Fara
day
Ang
le (d
eg)
Hc 0
20
40
60
80
0 50 100 150Temperature ()
Coe
rciv
e Fo
rce
(kA
/m)
0
500
1000
Coe
rciv
e Fo
rce
(Oe)
typical
minimum
-
17
6-3-2. GMF
GMF GMF GMF
GMF 6-8 ()
6-8
Hc 6-7
Hc Hc Hc Hc
GMF
GMF
GMF 40 3000(Oe)(25)( 1 ) 400(Oe)
Magnetic Garnet
Single Crystal
Chip tray
Direction of Magnetization
Direction of Magnetization
Direction of rotation
Ray of light
Direction of magnetization
Po larization
Magnetic Garnet
Single Crystal
Direction of Polarization
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18
6-4.
RIG ( Tcomp. )( Tc )()220300RIG () 0 0 RIG () 0 ()RIG
6-9 GMF GMF -10-10RIG ()GMF 6-10 GMF
6-9
6-10
-60
-40
-20
0
20
40
60
-50 0 50 100
Temerature
Fara
day
Ang
le
degr
ee)
-60
-40
-20
0
20
40
60
-50 0 50 100
Temerature
Fara
day
Ang
le
degr
ee)
Tcomp.
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19
7. ( AR-Coating ) 7-1.
Table.7-1. Item code Index ()
A 0.2 % E 1300 1650 nm 0.2 % N X
7-1
AE
7-2. 7-2-1. A()
A( 1)
ASiO2/TiO2 SiO2/TaO5 7-1 1550nm SiO2/TaO5
ARIG(n=2.39 4-1 )(n=1.96) GLB1064RIG RIG 7-1 A()
0
0.2
0.4
0.6
0.8
1
1400 1500 1600 1700
Wavelength (nm)
Ref
lect
ion
(%)
-
20
0
0.1
0.2
0.3
0.4
0.5
1450 1500 1550 1600 1650
Wavelength (nm)
Ref
lect
ion
(%)
Incidente angle5 degree
10 degree (p)20 degree (s)20 degree (p)30 degree (s)30 degree (p)
7-2-2. E()
E1300nm 1650nm ESiO2/TiO 7-2
7-2
7-3.
7-3 A
7-3
8. 8-1.
()GMF
1002000 -402000 9090Rh2000 -45 901000
0
0.1
0.2
0.3
0.4
0.5
1250 1350 1450 1550 1650
Wavelength (nm)
Ref
lect
ion
(%)
n=1.62n=1.58n=1.54n=1.50
-
21
8-2. 8-2-1.
8-1
100 MW/cm2
18 mmf 0-800 MW/cm2
20 ns 6 kHz
2 sec
8-1
8-2-2.
8-2 A1T1064 1064nm 1mm YAG 100mW 1064nm A1T1064 0.8dB A1T1064nm
200mW RIG RIG RIG (5-1-4 ) A1T1064 1W 1200-1600nm W
* A1T1064 GLB1064
8-2
0
5
10
0 200 400 600 800Peak power (MW/cm )
Dep
th o
f dam
age
(mm
)
Pulsed laser : 1558nm, 18 mmf , 6kHz, 20ns
Thresholds : 100 (MW/cm )( 260W 18mmf )
2
2
0
200
400
600
800
1000
0 200 400 600 800 1000Input Power Pi(mW)
Out
put P
ower
Po(
mW
)
0
20
40
60
80
100
Po/
Pi(%
)YAG0.7~1.1mmf
with substrate
without substrate
-
22
9. 9-1.
9-1 11mm AR
10.5x10.5mm
1mm (AR )
RIG 2mm 5mm
5mm 10mm
AR 2mm 20mm 20mm
10mm
AR 50mm 30mm 350mm
350mm 5
9-2 AR
1mm (- 0.2)mmf
1mm2mm (0.8)mmf RIG 2mm
2mm 5mm 5mm
0.8
AR < 2mm 2mm 20mm
20mm
0.8
AR 20mm 10mm
10mm 30mm 30mm
5
9-2. AR
9-1 ()()300m 400m
9-1 9-2 AR 9-2 AR
AR AR 9-3 AR
0
0.1
0.2
0.3
0.4
0.5
0 20 40 60 80 100Size of a defect (mm)
Inse
rtion
Los
s(dB
)
Calculation Results( defect )Beam Diameter 300mm
Beam Diameter 400mm
-
23
9-2 AR ]
9-3 AR
9-3. RIG AR
9-4 RIG () AR 2
9-4 RIG
9-4.
9-5
0
0.05
0.1
0.15
0.2
0 10 20 30 40 50Daimeter of a AR pinhole(mm)
Inse
rtion
Los
s(dB
)
0
10
20
30
40
Ref
lect
ion(
dB)
Calcuation Results( AR-coat spot for Air )
Beam Diameter = 300mm
A(long)
B(short)
chipping
chipping
0.00
0.05
0.10
0.15
0.20
0 100 200 300 400
Distance from beam center (mm)
Inse
rtion
Los
s (d
B)
0
10
20
30
40
exis
tenc
e pr
obab
ility
(%)
calculation parametersdefect size ; 50mmf
beam radius ; 300mmfoptical effective area ; 750mmf
0
0.05
0.1
0.15
0.2
0 1 2 3 4 5Width of a scratch (m)
Inse
rtion
Los
s(dB
)
Calculation Results( scratches )
Beam Diameter = 300m
-
24
10. 10-1.
10-1 ()
GGG (LPE )RIG GGG GGG RIG 10-1
RIG
10-1
10-2.
10-1V LPE RIG RIG
10-3.
RIG 10-1
RIG GGG CMP CMP
10-1
10-2