.. , .. , ..

41 01 02 - ,

41 01 03

3-

3

2004

621.382(075.8) 32.852 73 82

: ,

- ..

.. : . . . 41 01 02 - -

, 41 01 03 - . 3 . . 3: / .. , .. , .. . .:, 2004. 88 .: .

ISBN 985-444-721-9 (.3)

- , .

621. 382(075.8) 32.852 73

1: .. -

. 3 . .1: . .:, 2001. 48 .: .

2: .., .. : . . . . 3 . .2: . .:, 2003. 76 c.:.

ISBN 985-444-721-9 (.3) .., ..,

.., 2004 ISBN 985-444-308-6 , 2004

82

1. - 1.1 ......4 1.2 - .....7 1.3 ....10 1.4 .....12 1.5 ...17

2. - 2.1 ..24 2.2 31 2.3 ...46 2.4 ....49

3. - 3.1. .55 3.2. - 61 3.3. .66 3.4. 73 3.5. .....77

,

() -. , . , - , , . - , . , , , . - , , , (, ), - ( ), - , , , , - .

. , - , , - .

, - , . - .

, - , . XX - () - - . - - .

, .

1.

, . , , -. , - , - , . - , , - , - . , - - , .

- - . , .

1.1.

, . , -. - . , - , -. .

, = Aexp(i). ,

W = 1 + 22 = A12 + A22 + 4A1*A2cos(1 2). (1.1)

, (1 2). - - - , , . -, , -

. -, - , . , , - .

- (Aharonov Bohm effect). , , . 1.1. , - , - , , . , , - , . , .

. 1.1.

. - , . , - , . , , - , , - . , . = 2(/0), 0 = h/e - (h , e ). , .

, 0, , . (-) , -. , . , -, , . - , ( ) .

, . . 1.2 - .

. 1.2.

(),

. . 0 /2 = h/2e. . , .

magnetic field

multiwall nanotube

electric current

i

Magnetic

, ()

, -, - -, - -

, -

field (Tesla)

. , . .1.3 - ( ), - . - . - , , , , . - , , . , ( A), , ( B). - , - B-. - . - e2/h, . (universal conductance fluctuations). - .

. 1.3.

, ,

, , - . , .

1.2. -

, , . -. , - -

, . , - . - - . , . , . [1, 2] - [3, 4].

(Landauer Buttiker formal-ism) . , , , -. - . 1.4, , - i .

. 1.4. , - -, i -

i. , i- ,

Ii = 2evi(dni/dE)i. (1.2)

e ; vi ; dni/dE - ; i =I o, o . 2 . , ,

dni/dE = 1/hvi, (1.3)

h .

, , i-,

i

Ijj

Ii

Ii = (2e/h)i. (1.4)

. , - Ri . , i- , , , - Tij j- i- . i-

=ij

jijiii TRheI ])1[(2 . (1.5)

, -

, Ni ,

=ij

jijiiii TRNheI ])[(2 . (1.6)

, i = eVi, Vi , i- . , . , m n , :

== iN

mn mnijTijT

iN

mn mniRiR ,,, .

(1.7)

Ri m, n. Tij. m n.

, i- , , , -

=+ ji iNijTiR . (1.8)

(1.6) -

. . . , -

, . , , , .

, , , kBT - . , - , .

- . - . . - , S- (- ) . , , , , . , , , . , . , -. , , , .

1.3.

-

. , , .

, , . 1.5,, 1 4, - 2 3.

. 1.5. ()

, ()

, , - , . , I2 = I3 = 0 I1 = I4, () R14,23 = (V2 V3)/I1. - k l, m n,

Rmn,kl = (h/e2)[TkmTln TknTlm]/D, (1.9) D , Ri Tij. - m., n, k, l, -, .

- .

, , , . - , , -, . , , , , - . , , - . 2 3, , 3 , 2. , (1.9),

R14,23 = (h/e2)[T21T34 - T24T31]/D. (1.10)

, T24 T31 - , T21 T34 - . - - , . -, , - ( 1) - ( 3), 90 ( 4). , T24T31 > T21T34 .

- . - (. 1.5,).

, - - ( ) - , - , , .

1.4.

(Hall effect)

XIX . - . , - - , . 1.6. - , - , . ( ), . V, I , R = V/I. - R, , -. VH, - , . - RH = VH/I.

. 1.6.

RH = B/(en), B ,

e , n ( ) . , . , R - , . 1.7,. , - .

, - , - , , - . - (. 1.7,) - (). (quantum Hall effect). ( ) . 1980 . - [5]. , , -, RH = h/(ie2), h , i . (integer quantum Hall effect). . h/e2, - , .

currentI

voltagedropV

HallvoltageVH

.1.7. () ()

, , - i , , 1/3, 2/3, 2/5, 3/5 . . [6]. i = p/q, p q , q . - (fractional quantum Hall effect).

RH , - R . , - . R . , - . - , .

. 1.8. , ,

() ()

, , , . c = eB/m, , m . , - -. (Landau levels). Ei = (i + )c i = 1, 2, -, , , -, . 1.8,. c. - . , - kBT

(extended states). - , , . (localized states) - . , , , ( . 1.8,). , - , . . - . - (mobility edge). - , (edge states), - . , , , .

, , EF. EF - , , . -, , , - - . , - . , .

, - , (filling factor). RH = h/(ie2) = (h/e)/(ie) - 0 = h/e e - i. , , . i - , , - . , i - , e2/h.

- . , - , - . - . - " " -, , , . - , , . 1/3, , -, . , , , - , , - . , , . - . - , , .

- - , , , [7], . - , - . , . , . [1-8], (- ).

1.5.

, , -. - . - - , . .

-

. - , , - . - , , , (quantum interference transistor). - . - , - .

, , (1989) (1989). , . - . 1.9,. ( ), - . () - . , - , , () , - , 50 . - , .

, ( ), - , L - , .1.9,.

, ( ), . , - (), . 100% (.1.9,) . , - .

(1984). , - , , , L, . 1.10. , , , -

. , .

.1.9. , ()

() ()

L

VG

GATE (Port

DRAIN (Port 2)

SOURCE (Port 1)

) )

Con

duct

ance

(Nor

mal

ized

to e

2 /h)

2,0 1,5 1,0 0,5 0,0

0,00 1,25 2,50 3,75 5,00 L (Normalized to wavelengths)

4,0 3,0 2,0 1,0 0,0

0 5 10 15 20 L ( Normalized to the wavelengths of the lowest transverse mode)

Con

duct

ance

(Nor

mal

ized

to e

2 /h)

.1.10.

, , 2, - . , - - , (kF kF)L=2n, kF L n . - , 100 % - .

(1990) , -. : kFL=2n, kF .

, . - . GaAs 105 /, ( ) - 100 10-12 . , , - , RC- . - , , - .

, - . , - . - -

Gate

I L Drain Source

70 100 . . , - -. , . - - .

GaAs/AlGaAs 10 . - , - , . - , , , , . , , - . - , , , . , , .

( ) - (.1.11). , , , , , , p1sin1 = p2sin2. , - kF , kF = (2n)1/2, , :

sin1/sin2. = (2/1)1/2. (1.11) .

.1.11.

() ()

- . (1990). , , -, . 1.12. - , , - , , - , , . - -, , - .

. , . ( ) , - (), . - ( - ) - , . , , .

n1 n2

12

n1 n2

Conduction Band Edge

Fermi Level

Heterojunction Surface

Gate Metal

.1.12.

(-

), - , - . , , - . , -, .

[8], ( ).

Electron Collectors A B C

10 m

Refractive Prism

Electron Emitter

2.

. , - - , . - , .

2.1.

, . , - , , , -. - . - , .

, , - , - . . 2.1.

. -. . - -. , . . - .

, - +e/2 ( ) e/2 ( ), . - - . (Coulomb blockade).

elec tron

c onductor conductordielec tric

tunneling

. 2.1. [9]

. . [9, 10]. (19851986 .) - (single-electronics). - .

- , . 2.2,. - Ct -

Rt, - . Ce . - - , :

E = e2/2C eV, (2.1) C = t + Ce. , E 0, , |Vt| = e/2C. e2/2C (Coulomb gap).

. 2.2. () - ()

. 2.2,. - . - Rt. - e/2C f = I/e, I .

- . - kBT

10-16 , , - . , , , - , , Rt > h/e2. - , . - , .

, - . 2.3.

. 2.3. , () ()

-

. - , - . , , CL CR. C, CL CR. , - , - . - , -, , .

, -. .

CC

LC

R

ELECTRODE

RELECTRODE

L

Central island(quantum dot)

Tunneljunctions v

Ce

C RL t L

C RR t R

, . [8].

, -, . - = I L = I R = eVo, . 2.4,. , - I, e/C. - , e/C - .

. 2.4. () -

() ,

, , Vo - Vo < e/2C. - - (I V) .

- , - . e2/2C. - .

0 (EF). eVo -, , , .

E = 1/2[(e/C + Vo)2C Vo2C]. (2.2)

-e/2C e/2C

I

V

, , - eCR/C. ,

V C(e/2C + Vo)/CR. (2.3)

- - . C CR >> CL . 2.4,. , Vo = 0 -, .

. - , -, (. 2.5).

. 2.5. -

,

(Coulomb stair-

case). . - , .

, - , . , .

, -, - . , -, . , - . - , , - . ,

, , -. , - -. , - .

, - , . - , . - , .

, .

, - , 0 , - (Rt >> h/e2). , -. ( ) . , , - , - . - - - , . , - , . . - , . - (co-tunneling) - (macroscopic quantum tunneling). - , - , , , - , .

(elastic) (inelastic) . .

.

VEEe

hI )11(

8 2122

21 += , (2.4)

1 2 ; ; E1 , ; E2 , .

- . - (e2/2C).

, , - , . - - . :

VeVTkEEe

hI B ])2

()[()11(6

222

212

21

++= . (2.5)

- -. . - , - , I ~ V3. -- . . , , . - , , . , , , -. - .

2.2.

, , , , . , -

. .

(single-electron transistor) - , , . .2.6. : , .

. 2.6. () ()

. 2.7.

. 2.7. , () ()

Gate

Source Drain

tunneling junction

Rd, Cd

Rs, Cs

Vd,s

Vs

Vd

Vg,s

Vg

Cg

quantum dot

CgVg+CdVd Cd

dSg

gg VCC

VC +Cg+CS CdCg+Cd

CS

,2

12

1

+

ggd

dggd

VCeneC

VVCeneC

(2.6)

+++ dgggsVVCene

CC 21 .

21

+ gg

d

VCeneC

(2.7)

.2.8, Vd Vg, (2.6) (2.7).

. 2.8. Vd

: Ids

, . () ( .2.8,, . , , , , , , , .2.8, ,

0 1 2 0 1

1,0,1 2,1,0

0 1,0 2,1

-1 1 2 Vg

Vd

-e/2Cg e/2Cg 3e/2Cg 5e/2Cg Vg

Ids

Vg=0

Ids

A

)

0

Vg (); Vg () Ids Vds ()

- . , - , . , , . Vds, -

Vds

, /2g, - . . - 1 , - . , , - . - -. Ids Vg ne/Cg + e/2Cg ( Ids), .2.8,. Ids Vg . Ids Vds . - Ids Vds . 2.8, : e/2Cg. , , - Vds~0, Vg=0, -. , . - +1. [10]

(, +1) = [ ] ,/)1,(exp1)1,(1

2 TknnFnnF

Re Bt ++

(2.8)

F(n, n+1) , -, Rt . - s (, +1), - d (, +1). - 1 +1.

=dt

dpn tot(n+1, n)pn+1 + tot(n-1, n)pn-1 [ tot(n, n+1) + tot(n, n1)]pn, (2.9)

tot(n, n+1)= s(n, n+1)+ d(n, n+1). (2.10)

,1=+=n np (2.11)

I

= npeI [s(n, n+1)- d(n, n+1)]. (2.12)

- ( ) , -.

- . - . , , , . , -, ( ) ( ).

. , - , . - .

- , - .

- . (single-electron trap) [11, 12] .2.9,. - , U, , -, .

. , .

= (/0)1/2, (2.13)

0 , - ( ). , * - . -

Wmax (e2/2C)min (M, N/4), (2.14)

N .

.2.9,. - (U = U+) - , . (N M), . , , - . , - U- < U+ ( .2.9,). - n(U) - , - (.2.9,).

- -.

Ec/kBT, -, N. - .

12 ( ) - .

- - , - (single-electron turnstile) .2.10,.

* ,

.

.2.9. (), - () ()

source island trapping gate array island

Q(t)

U

-e

-e

W(i)

UU+

U=0

i0 1 2 3 4

n

n=2

n=1

n=0U- 0 U+ U

.2.10. () (); -,

()

- 1990 . [12]. V = 0 , : ( ) U . - U. V 0 , U , - , U . , .

, (sin-gle-electron pump), .2.10, [13]. - Ui(t), , (.2.10,), . ,

U(t)

+V/2

-V/2

gate

source

U1(t) U2(t) U3(t) U4(t) U5(t)

drain

U(t)

i 1

5

23

45

t 0

. , . - .

- , , f = I/e. .2.11,. - R : Rs>>R>>RQ. .2.11, .

, - V Vt = e/2C, , I > 0,1e/RC.

, , - . , , , - . -, , , , - , V > kBT/e, - ( , , ).

- () . , - , - , (~1 ) - (

.2.11. () ()

, .2.11, (DC current stan-dard). - f. - n - , , , I = nef. - , .

(2 + 2)- , I/I 10-3. , -, .

tunnel junction (C,R)

resistor (RS)

I(t) V

Q (t)

Q(t)

+e/2

-e/2

t=e/

t

( ) - - , - - . , - -, , .

, - 10-12 ~10, - 10-16.

1,510-8, - - , - - ( ). , , .

, , 10-10 ( ) , .

- ( - ), -. f - - , 1/RC.

, , - . - . - , (I = ef ~ ). , - , - .

. , , - , - , - .

- (N > 1) - (temperature standards) [14, 15].

, - - (|V| < Vt) V = NRI + const |V| >> Vt. Ec/kB, Ec = e2/C, : G dI/dV Gn 1/NR. - V = 0 - G/Gn Ec/6kBT , V = 5,44 NkBT/e.

, - , - . -, , , - . (~ 1%) , , . (, -, ) .

, , - .

- . - (voltage state logics) (charge state logics).

[16]. , , , , , . - , , - 1 0.

(. .2.8,) , -, . , -.

- .2.12 [17]. - , . - , -

- . 1 .

, - . - 10-4e/RC. - 10-7 .

- . - . .

1987 . [18]. - - , . , , -. , - .

- , - (single-electron transistor parametron) [19, 20].

, (.2.13,). , .

- , .2.13,. - Ec . , . , - . , - . Es - . - W(t), , , Es . - Es . -, -

, , .

A+B

+VDD

A

B

AB

-VDD

+VDD

A A

-VDD

+VDD

A

B

-VDD

A

A

A

B

B

B

.2.12.

.2.13. () ()

middleisland

rightisland

left island

ES (signal field)

EC(t) (clock field)

-e

-e

ECEt

W(t) -e

- - . .

-, . , 10 .

-, - - , h/e2 (25,8 ).

-, , () . - , - , , - .

-, - - . . , , - .

.

2.3.

, - -. , -, . - (resonant tunneling). - -, .

- . . [21]. , - - . .2.14.

. 2.14. -

- -

GaAs-AlGaAs. - GaAs, - GaAlAs. - --, Si-CaF2, Si-SiO2.

E F E1

E F V

E F

V

2E1/e

E F

E F

E F

E 1

. a , E1 = 22/(2m*a2). , (EF) . , - , , .

V - , - . , . - E1 , . - , . E1 . , . - . - , - V = 2E1/e.

E1 - . . , - (negative differential resistance) . -, , - .

- . , , - z. - m*. k , - xy. z , . - . . T(Ez) Ez -. x- y- Ex,y = (2/2m*)(kx2 + ky2). E = Ex,y + Ez .

- :

= 003 ))]('()()[(4 zzzyx kEEfEfETdkdkdkeI

h , (2.15)

f(E) f(E') - - . [f(E) - f(E')] , . - E' E E' = E + eV, V - .

-. , - . - , , -- . , , - - - - - .

2.4.

-, , , (1012 ) [22-24].

- (resonant tunneling diode RTD) , - , , . - , - - . , - - . 2.15.

. 2.15. - (), - (), - - ()

- -

I(V) C(V), , Rs. I(V) C(V) , Rs , . C(V) . , . - , . - . , I(V) C(V) .

- - , . : - (peak current density) (peak voltage) - , (valley current density), (peak-to-valley ratio).

. , , , - .

- ( ), . . -

I

C Depletion

V

V

C(V) I(V)

RS

, . , -, , .

, ( ), , . , , . , , GaAs AlAs - 1 - 4 . , - . - - - , .2.16.

. 2.16. GaAs-

AlAs - : ;

(PVR)

- - . , - , : -, , , .

RC-. -, - . - - .

4 6 8 10 12 14 16 Barrier Thickness (ML)

Experiment Theory 10

5 104 103

102 101

J(A

/cm

2 )

103

102

101

100

PVR

2 4 6 8 10 12 14 16 Barrier Thickness (ML)

Experiment Resonant Tunneling Theory

, , - . - tlife, . 0

tlife = h/0 , (2.16)

h , 0 , - .

0 -. , - . . - - 0,1 . - .

- , - , RsC(V). , .2.15,.

- - ( ). p-n . -- - . , -- 6,8 105 /2 1,5 10-7 [23]. , , - C/Jp, 0,22 /. , - . , , 10 /. - , - , . , , - ( - ). , -- , . , - , - - p-n-.

- - (resonant tunneling transistor) .

- , .2.17. , - , - (. . 2.15,).

.2.17.

-

- -

, . - (resonant tunneling bipolar transistor) - - (resonant tunneling hot electron transistor) [24-26].

- - - , . - , - - . - .

, - - (gated resonant tunneling diodes). p-n- . .2.18 . -, , , - , p-n-, .

Emitter

n+-InGaAsGate 1 Gate 2

n--GaAs

n--GaAs

n+-GaAs

S.I. GaAs sub.

p+-region p+-regionCollector

i-AlAs 1.5 nm i-GaAs 5 nm i-AlAs 1.5 nm

.2.18. - GaAs-AlAs , .

-

- -, , - . - -, (monostable-bistable transition logic elements MOBILEs) [26].

- , [27]. . . 2.19 .

. 2.19. ,

I

I

I

Vp 2Vp

Vbias

Vbias

Vbias

S2 S1 S2S1

S

S

S

PE

PE

PE

S

Voltage Voltage

Vbias

Vout

(.2.19,), - , (2Vp). - , S1 S2 (.2.19,), 2Vp. . , - ( - ) S1 ( ). - , - (.2.19,) . - Vbias .

, , , , , . - [28].

3. C-

, - - , - , - (spintronics). . - XX - - - -. , , -, , , . -, , , .

C , . (magnetore-sistance), - , . - R/R0 , R - , R0 . - , -

. - , . cc - - . , . 3.1. , - , - . - (giant magnetoresistance effect). , , . - (current-in-plane CIP) - (current perpendicular -to-plane CPP). - . 3.1. - , - . , - , , , . , , , - . .

low current high current

low resistancehigh resistance

.3.1. : ; , . , - ( ), - . - . Fe-Cr- -Cu- . - 100 - . - . ( ) ( ), . - (oscillatory exchange coupling). . - , - - . - . , , - , - , ( ).

high resistance

low current

EF

low resistance

high current

EF

.3.2. - : ; , . - , - , . - . - , , . . 3.2 . - (), - , , . - , . , - - . , , - . , , , , , . 10 . , . . , - , . . - , . , , (spin valve). , - , - .

, , , - . - 1% . , -, , - . , , , -, - , , (Ni80Fe20). , . , - ( -). , - , , () - . - . , , ( ) . - 104 /. - - . - , . - - 105 /, . - . - - , , - , -. - . c (pseudo-spin valve). , ,

, -

.

-, . , , , -. -, , . - , . , . - 510 % 800 8000 /. - - , . - , . -, , . - [29] , - , . , -, - , . , , . , - -. - , , rI = 22 f ls f. (3.1)

- (, , ) - : = 2 f[1 ] = 2 f[1 + ], (3.2)

f - lsf - . - lsf . df dn, df dn , lsf, -

),(/1),(/1

1),(apprappr

appr++

= , (3.3)

p ,

[ ] ndnfdfpr 2)(12)( )( ++=+ , (3.4)

2/)()()( )(

++=+ prprapr . (3.5)

n , -. , , ,

2)2()()()( MbrMfdfapRpRapR +=

. (3.6)

- - - rb -, , r = 2rb[1 ] r = 2 rb[1 + ]. (3.7)

- - , - - , . 3.2. - - , , -

. - . -, , . - , . - , , - (tunneling magnetoresistance effect). , . - , CoCr, CoFe - , , Al2O3, MgO, Ta2O5, . - , - . -, , , -. - . - .3.3, CoFe-Al2O3-Co-, -, CoFe-. - , : + - . , , , - ( ). , - . - , ( ). - , - .

.3.3. . . , - ( , , - , , . .). , , . . . - . - , , - . , . - - - [30], -, , . - , - . , , , ,

21

21

12

PPPP

RRR

RR

ap

pap

+== . (3.8)

0

Mag

neto

resi

stan

ce (%

)

Magnetic field (Oe)0-600 -400 600-200 400200

0

0

2.5

5.0

10.0

7.5

0.060.12

-0.50-0.25

CoFe/Al O /Cojunction

2 3

CoFe film

Co film

Rp Rap - ; P1 P2 - . - . 3.4 - CoFe-Al2O3-Co-.

.3.4. CoFe-Al2O3-Co

-, 0 . . - - , - . -, : - , ( -), . - , , . - . , 2023 %, - Al2O3- . [31, 32] , . , - GT(T), - , ,

Mag

neto

resi

stan

ce (

%)

5

Bias (V)

00

10

15

20

1 2 3 4 5 6

4.2 K77 K295 K

GS(T). , , G = GT(T)[1 + P1P2cos] + GS(T), (3.9)

P1 P2 -; . , P1 = P2 = P(T), - , ( = 0), G = GT(T)[1 + P(T)2cos] + GS(T), (3.10)

, , - ( = 180), G = GT(T)[1 P(T)2cos] + GS(T). (3.11)

, -,

)sin(0 CTCTGGT =

, (3.12)

G0 T = 0 K C = 1,387x106d/U1/2, (1/2/K), , d U. - . P(T) = P0(1 BT3/2), (3.13)

P0 T = 0 K, - B - , . , B , . , - -, , , - - : GS(T) = ST, (3.14)

S , . - , - . 4/3, - -. - - . 3.5. - (1 BT3/2). - . - , , , , - - . - , , - , , , .

.3.5. () - ()

3.3.

. - , - , - . , - -, - -, -, , - . , - -

0.7

100 200 300 400

0.8

0.9

1.0

100

0.1

0.2

200 300Temperature (K) Temperature (K)

GT

G(

)/(7

7 K

)

GG

S/

Co/Al O /Co/NiO2 3

Co/Al O /Ni Fe2 3 80 20Co/Al O /Co/NiO2 3

, - .

- .

. - gBB B, g- 2, .

AIIBVI . ZnMnSe ZnBeMnSe . . - AIIBVI , - . n- n-ZnSe -. - - . 20 . 100 %- .

AIIIBV. , Ga1-xMnxAs -. , - , n- . -, - ( < 1 ) - - , - .

(- ) . , g- - . - , .

- - - . - , (Rashba effect) [33, 34]. -

. , , , - -.

, . - . - :

Hso = ( ) zk ys , (3.15) - ; z - ; k . - s - Esurf.

, - Hso . -

.

( )2 2 y k z2

k

sm= + h (3.16)

,

,

kmkkE s= 2)(

22h . (3.17)

,

k = 0 - k, s - , - .

, -, . -- - k, - - k, - . - , (Shubnikov-de Haas effect), .

- s, c [35]

GaAs

InAs

2D- 2,5x10-10 9,0x10-10 2D- 6,0x10-10

- InAs- GaAs - () g- - , .

- , , , - , , kz ~ /dz, dz . , - k

, , , . , - .

, -, - . . - , , - , - . , , - -. -, . -, -, , , -. - . . - , - , .

-, - ZnSe, -. - , . , . , . , -, , . - - , , , GaAs. , -- , BeTe-ZnMnSe-BeTe. BeTe ZnMnSe - GaAs. ZnMnSe- ZnBeMnSe-- AlGaAs 8090 % . . , , -

ZnSe . - .

, - - . , - , - -. , , -, - - -.

-

- . , - . , - -, .

, -. , , , , , . - (Bir-AronovPikus mechanism). . p- . - - (Elliot -Yafet mechanism), - - , - . , -.

, - IIIV, (Dyakonov Perel mechanism). - - - , IIIV. , , GaAs . , - - (100)- , . , -

IIIV . , , -, , . , . , GaAs - (110) - - , 2 -. , (100)- . ( ) - ZnSe- ZnCdSe- -. - - - , - - .

, - - . , - - , , .

- . - . , , - - AlGaAs-GaAs-AlGaAs- - , .

GaAs- . 3.6.

.3.6. AlGaAs-GaAs-AlGaAs- ZnBeMnSe

ZnBeMnSe - . GaAs AlGaAs- . - ( , ) ZnBeMnSe. - ZnBeMnSe-n-AlGaAs - i-GaAs- . , p-AlGaAs- , .

GaAs - ( ), - - , - . - GaAs- , - (mj = + 1/2) - (mj = 1/2) (mj = + 3/2 mj = 3/2) (mj = + 1/2 mj = 1/2) . - --, --, .

, , - mj 1. -- (mj = 1/2) , mj 1/2 3/2, , -

ZnBeMnSespin aligner

n-AlGaAs i-GaAs p-AlGaAs

+3/2-3/2

-1/2 +1/2

+1/2-1/2 mj

mj+1/2-1/2

-3/2

+3/2

-1/2+1/2

mj

mj

h

33 1 1

h

mj 1/2 +1/2. , , . - , , - , . Popt - - P

Pnnnn

nnnn

nnnnoptP 5,02

133

33=

+=

+++++=

. (3.18)

Popt = 50 % -

100 %. , -

- . , - -. . - . , , .

3.4.

, -. . . 3.7.

.3.7.

(0 10 K)

(, Cu, Au, Al) , - . (, Pb, Nb) - , - Tc. , , , Fe, Co, Ni, ,

Temperature

Res

ista

nce Kondo rise

super-conductivity

Tc TK

(Kondo effect) [36]. , . TK, , (Kondo temperature).

, .. (1961), - (. 3.8). - , - E0 . , , , , . , , . - , - . -, U. - E0 (.3.8,). - h/E0. - , - (.3.8,) (.3.8,). - , - . .

initial state

E0

U

final statevirtual state

Density of states

Ene

rgy

E

k TB K

.3.8.

-

. , -, - (Kondo resonance). - , - (Kondo state), , . . - - , , -, . , , - (Kondo clouds). - , . , .

- -. , . - . -

= AT5 BlnT + C, (3.19) A, B, C , , - , .

EUUEEEUTK

)(exp

200 += , (3.20)

E , (.3.8,).

. 1 100 K.

- R R0 - R/R0 = f(T/TK). , 1/2, f(T/TK). , - , U, E0 E.

-

, - , . - . , - , - . . . , , , , -, , s = 1/2.

- - --, - . - . 3.9,. - , - , . E - . , .

.3.9. () ()

, , - .

- . . . .

, - . - ,

dot

outcomegate

incomegate

gate

electrondrain

electronsource

n = even

n+1

n+2

n+3

n+4

Gate voltage

Con

duct

ance

(/

)e

h2

0

2

1

T = 1 K

T = 25 mK

. , . , - . . 3.9, - , -, . , . , . - , .

-, - T/TK. 2e2/h. , , , - . - .

, , .

3.5.

- . - . - . , -. - . - , - , - , - , . -, .

, - -, , - IBM 1997 . , - , - (),

10 100 . , , - . , . , , , -. , - , . - .

.3.10.

.3.10. ,

, -, -

() - ( ) .

- , . - . , . - , . , - , , , - , - . 25 .

, -, , -, .

magneticdomain

readhead

Iin Iout

S

NN

S

. 3.11. , , - , - , -. , - . -, -. , - , , - , . (xy) , . , - , , -, , - . . , , -.

.3.11. ,

, . , , - , , -, -. , , -, - , , . 90. -.

bit line

sense line

world line

. - . , - . , - , - . , , , .

-

- - . 3.12. , . . - , , , - . - 30 %.

.3.12. ,

-

, - . -, , ( - , - ). , - , , - ( ), , , -

. . , - . , , . , , , - . -. -.

, - , , -. . . , , - , - , .

-

- , . . 3.13 - [37, 38]. - , n- , -. - , .

n-Si emitter

NiFeAu

AuCo

Pt

+

+_

_ e-

e-

e-

e-

e-e-

emitter collectorspin-valvebase

VebVbc

E

EFn-Si

collector

Ie

Ic

.3.13. () () -

Si-Pt-, Si-Au- NiFe-Au-Co--

, n- , - . - - , .

- , , NiFe Co, , (u). NiFe Co - - . - . - . -, Pt Au . , . Si-Pt , . , . -, Si-Au, 0,1 Si-Pt-, . - , - .

. - ( I0), - -. Si-Pt- , , . , 0,5 1 -. , - , , -. , . , - . , - . , , Ic , -. - - .

, , , - -.

- , - ( magnetocurrent), , () ,

apcI

apcI

pcIMC = , (3.21)

p - .

- , - . . 3.14. - . - . , (22 ) NiFe (5 ) , NiFe . - . , 300 % 500 % 77 K. , . - .

.3.14. -

-

, , . - , - . , , , , . , -

Col

lect

or c

urre

nt (

arb.

uni

ts)

Magnetic field (Oe)0-40 -20 4020

0

12

8

4

, , - . - , , .

- - ( ). - , , .

, , - - . - .

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