xps studies
DESCRIPTION
Phosphonic Acid Modification of Indium-Tin Oxide Electrodes: Combined XPS/UPS/Contact Angle Studies. Sergio A. Paniagua, Peter J. Hotchkiss, Simon C. Jones, Seth R. Marder, Anoma Mudalige, F. Saneeha Marrikar, Jeanne E. Pemberton, Neal R. Armstrong. - PowerPoint PPT PresentationTRANSCRIPT
Phosphonic Acid Modification of Indium-Tin Oxide Electrodes: Combined Phosphonic Acid Modification of Indium-Tin Oxide Electrodes: Combined XPS/UPS/Contact Angle StudiesXPS/UPS/Contact Angle Studies
Sergio A. Paniagua, Peter J. Hotchkiss, Simon C. Jones, Seth R. Marder, Anoma Mudalige, F. Saneeha Marrikar, Jeanne E. Pemberton, Neal R. Armstrong
XPS Studies PM-IRRAS / Contact Angle Measurements UPS / Summary
Thrust 2: Light Sources and Organic Electronics, STA 4: Organic electronics and energy harvesting devices, Project 4.2: Organics for portable power generation
PAs used in this project:
XPS shows the benefits of OP treatment for activation towards modification.
The expected monolayers are obtained.
XPS spectra acquired without charge neutralizer:
Analysis of the modified surfaces is necessary to explain device behavior
P
FF
FF
FF
F
F
FF
FF
F
FF
FF
F
HPA ODPA FHOPA PFBPA
O
HO
OHP
O
HO
OHP
O
HO
OHP
O
HO
OH
TFBdiPA
FF
F F
PO
HOOH
PO
OH
HO
HPA DSC / OP ITO
= 4.5 eV = 4.5 eV
0.1 eV
PFBPAFHOPA TFBdiPA
= 4.9 eV = 4.5 eV
0.2 eV
= 5.1 eV
0.2 eV
ECBM
EF
EVAC
-0.7 eV -0.1 eV -0.6 eV -0.8 eV
3.0 eV
= 5.1 eV
0.2 eV
ODPA
- + - + - + - +-+ -
EVBM
relative to DSC ITO (+0.4 eV)
0.1 eV
0
10
20
30
40
50
60
70
80
DSC ITO OP ITO HPA ODPA FHOPA PFBPA TFBdiPA
Treatment
Surf
ace
Ener
gy (m
J/m
2 )
PM-IRRAS gives insight into the binding mode of the PAs to the oxide surface.
Reaction scheme proposed for the modification protocol used:
•Surface energy components for each treatment are obtained from contact angle data probing with water and hexadecane
•By changing the surface modifier, the polar component of the surface energy can be changed while keeping the dispersive component relatively the same
Surface band energy diagrams constructed from UPS data arising from the monolayer-ITO surface system. The high work function Ф of OP treatment is maintained with FHOPA and to a lesser degree with PFBPA. Significant surface dipoles are seen for the modifications with alkyl PAs and TFBdiPA.
Upper column→ Polar Lower column→ Dispersion
ODPApowder
ODPAmodifiedOP ITO
MO
OM
OM
OHO
O
OH
O
P
R
HO OOH
MO
OM
OM
OHO
O
OH
OM
O
OM
OM
OHO
O
O
O
P
RHO O
O OHO P
R
-H2O MO
OM
OM
OHO
O
O
O
O
OP
R
OH +H+
-H2O
predominant product probable byproductsome monodentate might be left
+
One of the most common bottom contact electrodes in organic PVs is indium-tin oxide (ITO), whose hydrophilic nature makes it incompatible with the usual nonpolar organic layers used as hole-transport layers, with the consequence of reduced charge collection, and device instability due to delamination of the organic layer.
ITO
Glass
N N
>100 nm
~20 nm
~40 nm
~10 nm
~100 nm
Illustration of an excitonic planar bilayer heterojunction cell.
Schematic view of a detergent/solvent “cleaned” (DSC) ITO surface; contamination reduces work function, electroactivity, and homogeneity.
Oxygen plasma (OP) treatment can be used to “activate” the ITO surface. Surface modification with phosphonic acid (PA) monolayers following this activation may result in a more favorable interaction with the hole-transport layer through better surface energy matching, and a more homogeneous contact while retaining some of the large work function increase seen in OP-ITO.
MoleculeFull monolayer coverage of corresponding thiol on Au (x1014 cm-2)
Coverage relative to full monolayer (from contact angle data)
Change in Ф (eV) relative to OP-treated ITO. Values in brackets ( ) are estimated relative to DSC-treated ITO
SD (eV) relative to OP ITO
Modifier-induced SD (eV) relative to a hypothetical dipole free OP ITO
FHOPA 3.4 0.86 0.0 (0.6) 0.2 0.6
PFBPA not found not determined -0.2 (0.4) -0.1 0.3
ODPA 5.5 0.91 -0.6 (0.0) -0.7 -0.3
HPA 5.5 0.90 -0.6 (0.0) -0.6 -0.2
TFBdiPA not found not determined -0.6 (0.0) -0.8 -0.4
HO
In
O
O
In
HO
O
In
O
In
OH
O
Sn
O
In
O
OO
O
In
O
In
O
O
Sn
O
In
O
In
O
In
O
In
Contamination
In2O3 /SnO2(ITO bulk)
"InOOH" +In2O3 /SnO2
(COx, H2O,CxHx, etc)
HO
In
O
O
In
HO
O
In
O
In
OH
O
Sn
O
In
O
OO
O
In
O
In
O
O
Sn
O
In
O
In
O
In
O
In
DSC/OP ITO
FHOPA modified DSC/OP ITO
DSC/OP ITO
FHOPA modified DSC/OP ITO
O
In
OH
O
In
O
O
In
OH
In
O
O
Sn
O
In
O
OO
O
In
O
In
O
O
Sn
O
In
O
In
O
In
O
In
O O O OHO
In
OH
O
In
O
O
In
OH
In
O
O
Sn
OH
In
OH
OO
O
In
O
In
O
O
Sn
O
In
O
In
O
In
O
In
O O O OH
Surface modification with phosphonic acids
Phosphonic Acid Modified DSC/OP ITO
TFBdiPApowder
TFBdiPA modified OP ITO
The Secondary electron edge (SEE) and Valence band maximum (VBM) of the ITO can be tuned by choosing different phosphonic acids
This research was made possible through a grant from the NSF Science and Technology Center of Materials and Devices for Information Technology Research, No. DMR - 0120967