walive pathiranage manula randhika pathirana, matthew ridder, and luis lopez ruiz university of...
TRANSCRIPT
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Walive Pathiranage Manula Randhika Pathirana,Matthew Ridder,and Luis Lopez RuizUniversity of Virginia, Dept. of Electrical Engineering
Dec 11, 2015
A Comparison of FET Devices: FinFETs vs. Traditional CMOS
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MOSFET and FinFET Structure
• 3D structure• Conducting channel on 3 sides.• Very little leakage.• High potential for large
improvements in power
• 2D structure• Conducting channel only on the
surface.• As the channel decreases, the
control over the device is reduced.
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Related Work
• 22 and 45nm technology comparisons for 6T SRAM cells
• Power reduction and faster performance
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Our Project
16nm technology
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Setup
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NAND
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NAND ResultsCMOS
FinFET
Finfet CMOSA B Pleakage(nW) Pleakage(nW)0 0 0.82 2.980 1 0.91 3.401 0 0.79 2.481 1 0.73 2.34
Input
Transition Finfet delay(ps) CMOS delay(ps)01→11 42 33011→10 60 48201→11 27 36111→01 52 444
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NOR
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NOR ResultsCMOS
FinFET
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XOR
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XOR Results16nm CMOS
16nm finFET
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Flip Flop
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Flip Flop ResultsCMOS
FinFET
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4-bit Adder
Finfet delay(ps) CMOS delay(ps)tpLH 52 744tpHL 54 733
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4-bit Adder ResultsCMOS
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4-bit Adder ResultsFinFET
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MUXMUX 4to1 Schematic
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MUXMUX 4to1 Testbench
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MUX Results16nm CMOS Technology – Transient Analysis
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MUX Results16nm finFET Technology – Transient Analysis
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MUX ResultsDelay and Power Measurements Comparisson
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Conclusions and Future Work• FinFET devices show a high improvement over traditional
CMOS in terms of both delay and leakage. XOR: finFET 11x faster and 8x less leakage. MUX: finFET 12x faster and 10x less leakage NAND:FinFET 8x faster and 3x less leakage Adder:FinFET 14x faster and 4x less leakage
• Next steps would be to obtain access to layout and do area analysis and comparison between technologies by including parasitic effect
• Despite the improvements shown, there are challenges to fully adopt this new technology: resources for modeling and designing, fabrication, cost, etc.