v.l. semenenko , v.g. leiman , a.v. arsenin , a.d. gladun and v.i ryzhii
DESCRIPTION
Parametric Instability of Mobile Elastic Gate in Tera- and Nano- High Electron Mobility Transistor. V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii. Outline. Introduction Modulated THz radiation detector - PowerPoint PPT PresentationTRANSCRIPT
![Page 1: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/1.jpg)
Parametric Instability of Mobile Elastic Gate in Tera- and Nano-
High Electron Mobility Transistor
V.L. Semenenko, V.G. Leiman, A.V. Arsenin,
A.D. Gladun and V.I Ryzhii
![Page 2: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/2.jpg)
Outline
• Introduction• Modulated THz radiation detector• Reduction the model to the capacitance transducer equations• Calculation for the threshold signal amplitude and power
![Page 3: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/3.jpg)
Motivation
Expected roadmap for some THz applications, 2007*)
* Masayoshi Tonouchi, “Cutting-edge terahertz technology”, Nature Photonics 1, 97 - 105 (2007)
Mod
ulat
ed T
Hz
radi
ation
de
tect
ors
are
requ
ired
![Page 4: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/4.jpg)
The first resonant gate transistor
H. C. Nathanson, W. E. Newell, R. A. Wickstorm, and J. R. Davis, IEEE Trans. Electron Devices 14, 117, 1967.
![Page 5: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/5.jpg)
Recent modulated THz detectors
V. Ryzhii, M. Ryzhii, Y. Hu, et al., Appl. Phys. Lett. 90, 203503 (2007).
V. G. Leiman, et al., J. Appl. Phys. 104, 024514 (2008).
![Page 6: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/6.jpg)
Parametric instability in capacitance transducer
2 2
1 12
2 2 0
2 =
2 1 = cos ,
22
m m 2S
2 0e e 0
2e e 0
0
2
1 cos ,
1, , .
4
qx x x
S M
x Uq q q t
d L
R SC
L LC d
(0)(0)
m m e e1 1 2 2
03
= , = , = , = ,2
= , = , = , = ,2 2
2
S
S
x q M dt q S
d q
U
SL M d
2 1 1m m S S S S 0
simple analisys:
x x x M F x t M F x x
Dimensionless equations
![Page 7: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/7.jpg)
Calculations for threshold Λ
![Page 8: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/8.jpg)
Device scheme & modelFront view Top view
= 0
= ,xe
u
t xu u e
u u Et x m
/2
/2
1 2
under the conditions:
, = 0,
= .
L
l
L
x t dx t
t
S
where
, ,x t en x t
/2
2 20/2
and
2 , 2Ll
x
L
t t xE d
x z x
0~1 um, ~1 um, ~ 50 nm, ~1 5 nmL l z a
Gate charge field component
Hydrodynamic model of electron transport in 2DEG
![Page 9: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/9.jpg)
Solution of the linearized equations
for the harmonic incoming signal c.c.,2
response of the charge on the gate will be c.c.2
i t
i t
l l
et V
et q
2 20
0
2= , = .S
e
e nQ
m L
/2
2 20/2
/2
1 2
/2
= 0
2 , 2=
under the conditions:
, = 0, = .
S
Ll
e eL
L
l
L
uen
t x
t t xu e eu d
t m x m z x
x t dx t t
lq C V Because of the
linear equations
Characteristic frequency & quality factor of the 2DEG oscillations
![Page 10: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/10.jpg)
Power consumption & linear force acting on the gate
2
src 0= .2lP
2
0
0
= .lF z
![Page 11: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/11.jpg)
Equivalent system of ODEs
22
0
2 2res 0 0 0 0
0
lets try to find the equivalent equations system
in the following form:
2 =
1 = cos ,
m ml
qDM z
q q z A q B tz
2
res
0
= 0
where
2= , .
ln
z z
zd
zA
d L
… As it would be if the device was the
following:
![Page 12: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/12.jpg)
Fitting the parameters C & D
0res res 2 2
2 2res
0 0
,
Q
;
2res res
22 2
2 2res
0 0
,
Q
; res 0
res0
.z
2 resres 2
res
= 2D
resres= ,BQ
![Page 13: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/13.jpg)
Dimensionless equations system
2 22 res res
2res 0
2 2 2res0 res res 0 0 0
0
ODEs system with dimensional paremeters:
2 = 2
= cos .
m ml
q
M z
q q q A tz Q
(0)res 02 (0)
res 0 res
2resm m res 0 res 0 0
1 1 2 2 30
after the following substitution:
= , = , = , = ,2
2= , = , = , = , = ,
2
l
l
A q Mt q z
z q A
A
Q M z
2 2
1 12
2 2 0
we obtain already known equation system:
2 =
2 1 = cos ,
![Page 14: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/14.jpg)
Results & conclusion
3min 00 min 2
res 0 res2lQ z M
A
2minmin 0
res=2lP
* Huttel A.K. et al // Nano Lett., Vol. 9, No. 7, P. 2547, 2009.** Arsenin A.V. et al // J. of Comm. Tech. and Electronics,Vol. 54, No. 11, P. 1319, 2009.
5 *) 40 m 0m
m
we used the following parameters:
~ 1 THz, ~ 10, 100MHz, ~ 10 , 10 ,2 2
material of cantilever: single-wall carbon nanotube.
Q Q
According to our previous work**), in the case of plain metallic cantilever gate: min
0 0.5 1V can be 2-3 orders lower in the case of SWCNT gate
![Page 15: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/15.jpg)
Thank you very muchfor your attention!
![Page 16: V.L. Semenenko , V.G. Leiman , A.V. Arsenin , A.D. Gladun and V.I Ryzhii](https://reader031.vdocuments.mx/reader031/viewer/2022032206/5681314c550346895d97c654/html5/thumbnails/16.jpg)
Calculation for the values Θres & Ψres